USOO751152382
`
`(12) United States Patent
`US 7,511,523 B2
`(10) Patent No.:
`Chen et al.
`(45) Date of Patent:
`Mar. 31, 2009
`
`(54) CANTILEVER MICROPROBES FOR
`CONTACTING ELECTRONIC COMPONENTS
`AND METHODS FOR MAKING SUCH
`PROBES
`
`60/582,690. filed on Jun. 23. 2004. provisional appli-
`cation No. 60/609,719. tiled on Sep. 13. 2004. provi-
`sional application No. 60/611789. filed on Sep. 20.
`2004.
`
`(75)
`
`Inventors: Richard T. Chen. Burbank. CA (US):
`Ezekiel J. J. Kruglick. San Diego. CA
`(US): Christopher A. Bang. San Diego.
`CA (US): Dennis R. Smalley. Newhall.
`CA (US): Pavel B. Lembrlkov. Santa
`Monica. CA (US)
`
`(73) Assignee: Microfabrica lnc.. Van Nuys. CA (US)
`
`( * ) Notice:
`
`Subject to any disclaimer. the term ofthjs
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 0 days.
`
`(21) App]. No.: 11/695577
`
`(22)
`
`Filed:
`
`Apr. 2. 2007
`
`(65)
`
`Prior Publication Data
`US 2007/0170943 Al
`Jul. 26. 2007
`
`Related US. Application Data
`
`(63) Continuation of application No. 11/028,960. filed on
`Jan. 3. 2005. now Pat. No. 7.265.565. and a continua-
`tion-in-part of application No. 101949.738. filed on
`Sep. 24. 2004. now abandoned. which is a continua-
`tion-in-part of application No. 10/772943. filed on
`Feb. 4. 2004. now abandoned.
`
`(60)
`
`Provisional application No. 60/441186. filed on Feb.
`4. 2003. provisional application No. 60/506.015. filed
`on Sep. 24. 2003. provisional application No. 60/533.
`933. filed on Dec. 31. 2003. provisional application
`No. 60/533947. filed on Dec. 31. 2003. provisional
`application No. 60/536865. filed on Jan. 15. 2004.
`provisional application No. 60/540511. [lied on Jan.
`29. 2004. provisional application No. 60/582689.
`filed on Jun. 23. 2004. provisional application No.
`
`(51)
`
`Int. Cl.
`(2006.01)
`601R 31/02
`(52) U.S. (Tl.
`........................ 324/762: 324/754: 324/761
`(58) Field of Classification Search ....................... None
`See application file for complete search history.
`
`(56)
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`5.190.637 A
`
`31993 Guckcl
`
`205s‘ll8
`
`(Continued)
`O'l'llljR l’UBLlCA‘l‘lONS
`
`Cohen. el al.. “EFAB: Batch Production of Functional. Fully-Dense
`Metal Parts with Micron-Scale Features". Proc. 9th Solid Freet‘ornr
`Fabrication. The University ofTexas at Austin. Aug 199s. pp. 161.
`
`(Continued)
`
`Primarjr Examiner Minh N Tang
`(74) Altomqt'. Agent. or Firm Dennis R. Smalley
`
`(57)
`
`ABSTRACT
`
`Embodiments disclosed herein are directed to compliant
`probe structures for making temporary or pemianent contact
`with electronic circuits and the like. In particular. embodi-
`ments are directed to various designs ofcantilever-like probe
`structures. Some embodiments are directed to methods for
`fabricating such cantilever structures. In some embodiments.
`for example. cantilever probes have extended base structures.
`slide in mounting structures. multi-beam configurations. oil'-
`sct bonding locations to allow closer positioning of adjacent
`probes. compliant elements with tensional configurations.
`improved over travel. improved compliance. improved semb-
`bing capability. and/or the like.
`
`9 Claims, 37 Drawing Sheets
`
`/1828 /182b
`
`
`
`Page 1 of 55
`
`Feinmetall Exhibit 2016
`
`FormFactor, Inc. v. Feinmetall, GmbH
`lPR2019—00082
`
`

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`US. Patent
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`Mar. 31, 2009
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`FIG. 18A
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`FIG. 183
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`Mar. 31. 2009
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`312A 3123
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`FIG. 20A 326A
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`US 7,511,523 B2
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`FIG. 223
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`US. Patent
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`Mar. 31. 2009
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`Sheet 12 M37
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`US 7,511,523 32
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`FIG 25A
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`FIG 253
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`US. Patent
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`Mar. 31. 2009
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`FIG 25C
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`US. Patent
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`US 7.511.523 32
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`‘ —-m FIG. 28A
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`FIG 31
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`FIG 32
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`US 7,511,523 132
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`FIG 34A
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`FIG 34B
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`US 7,511,523 32
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`US. Patent
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`US. Patent
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`FIG 37D
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`US. Patent
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`Mar. 31, 2009
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`Sheet 26 of 37
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`US 7,511,523 32
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`Page 28 of 55
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`Sheet 27 0‘ 37
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`US. Patent
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`US 7,511,523 B2
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`FIG 39A
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`US. Patent
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`FIG 39C
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`US. Patent
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`US. Patent
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`US. Patent
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`US 7,511,523 B2
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`FIG 41
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`US. Patent
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`Mar. 31, 2009
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`Sheet 33 of 37
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`US 7,511,523 B2
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`832
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`FIG 430
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`US. Patent
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`U.S. Patent
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`Sheet 36 0f 37
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`us 7,511,523 “2
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`FIG 46A
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`US. Patent
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`US 7,511,523 B2
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`FIG 46D
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`FIG 46E
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`2
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`herein. Since the filing ofthe patent application that led to the
`
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`above noted patent, various papers about conformable con-
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`
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`tact mask plating (i.e. INSTANT MASKINGTM) and el ectro-
`
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`
`
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`
`
`chemical fabrication have been published:
`
`
`
`
`
`1. A. Cohen, G. Zhang, F. Tseng, F, Mansfeld, U. Frodis
`
`
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`
`
`
`
`
`
`
`and P. Will, “EFAB: Batch production of functional, fully-
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`
`
`dense metal parts with micro-scale features”, Proc. 9th Solid
`
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`Freeforrn Fabrication, The University of Texas at Austin, 3
`
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`161,Aug. 1998.
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`2. A. Cohen, G. Zhang, l-'. Tseng, F. Mansfeld, U. Frodis
`
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`
`
`
`
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`and P. Will, “EFAB: Rapid, Low-Cost Desktop Microma-
`
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`
`
`
`
`cl1ir1ing of High Aspect Ratio True 3-D MEMS”, Proc. 12t1
`
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`
`
`
`
`
`
`IEEE Micro Electro Mechanical Systems Workshop, IEBE, 3
`
`
`
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`
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`244, Jan. 1999.
`
`
`
`3. A. Cohen, “3-D Micrornachining by Electrochemical
`
`
`
`
`
`
`Fabrication”, Micromachine Devices, Mar. 1999.
`
`
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`
`
`4. G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfelc,
`
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`
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`
`
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`
`
`
`
`and P. Will, “EFAB: Rapid Desktop Manufacturing of True
`
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`
`
`
`
`
`
`3-D Microstructures”, Proc. 2nd International Conference 0 1
`
`
`
`
`
`
`
`Integrated MicroNanotechnology for Space Applications,
`
`
`
`
`
`The Aerospace Co. ,A.pr 1999.
`
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`
`
`5. F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfelc,
`
`
`
`
`
`
`
`
`
`
`and P. Will, “EFAB: High Aspect Ratio Ar,bitrary 3-D Metal
`
`
`
`
`
`
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`
`
`Microstructures using a Low-Cost Automated Batch Pro-
`
`
`
`
`
`
`cess”,3rd International Workshop on High Aspect Ratio
`
`
`
`
`
`
`
`
`MicroStructure Technology (HARMST’ 99), J1m.1999.
`
`
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`
`
`6. A. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld,
`
`
`
`
`
`
`
`
`
`
`and P. Will, “EFAB: Low-Cost, Automated Electrochemical
`
`
`
`
`
`
`Batch Fabrication ofArbitrary 3—D Microstructures”, Micro—
`
`
`
`
`
`
`
`machining and Microfabrication Process Technology, SPIE
`
`
`
`
`
`1999 Symposium 011 Micrornachining and Microfabrication,
`
`
`
`
`
`Sep. 1999.
`
`
`7. F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld,
`
`
`
`
`
`
`
`
`
`
`and P. Will, “EFAB: High Aspect Ratio, Arbitrary 3-D Metal
`
`
`
`
`
`
`
`
`
`Microstructures using a Low-Cost Automated Batch Pro-
`
`
`
`
`
`
`cess”, MEMS Symposium, ASME 1999 International
`
`
`
`
`
`Mechanical Engineering Congress and Exposition, Nov.
`,
`
`
`
`
`
`
`1999.
`
`8. A. Cohen, “Electrochemical Fabrication (EFABTM)”,
`
`
`
`
`
`Chapter 19 of The MEMS Handbook, edited by Mohamed
`
`
`
`
`
`
`
`
`Gad-EI-IIak, CRC Press, 2002.
`
`
`
`
`
`9. VIicrofabricationiRapid Prototyping’ s KillerApplica-
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`
`
`
`tion”,pages 1-5 ofthe Rapid Prototyping Report, CAD/CAM
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`Publishing, Inc., June 1999.
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`
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`he disclosures of these nine publications are hereby
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`incorporated herein by reference as if set forth1n full herein.
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`The electrochemical deposition process may be carried out
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`in a number of different ways as set forth in the above patent
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`anc publications. In one form,
`this process involves the
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`execution ofthree separate operations during the fon11ation of
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`each layer of the structure that is to be formed:
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`1. Selectively depositing at least one material by elec-
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`trodeposition upon one or more desired regions of a substrate.
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`2. Then, blanket depositing at least one additional material
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`by electrodeposition so that the additional deposit covers both
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`the regions that were previously selectively deposited onto,
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`and the regions of the substrate that did not receive any
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`previously applied selective depositions.
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`3. Finally, planarizing the materials deposited during the
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`first and second operations to produce a smoothed surface of
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`a first layer of desired thickness having at least one region
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`containing the at least one material and at least one region
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`containing at least the one additional material.
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`After formation of the first layer, one or more additional
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`layers may be formed adjacent to the immediately preceding
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`layer and adhered to the smoothed surface of that preceding
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`layer. These additional layers are formed by repeating the first
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`US 7,511,523 B2
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`1
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`CANTILEVER MICROPROBES FOR
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`CONTACTING ELECTRONIC COMPONENTS
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`AND YIETHODS FOR MAKING SUCH
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`PROBES
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`RELATED APPLICATIONS
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`10
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`15
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`20
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`25
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`30
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`35
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`40
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`45
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`50
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`55
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`60
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`65
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`This application is a continuation of U.S. application Ser.
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`No. 11/028,960 which was filed Jan. 3, 2005. now U.S. Pat.
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`No. 7,265,565, issued on Sep. 4, 2007 which in turn claims
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`benefit ofU.S. application Ser. Nos. 60/582,689, filed Jun. 23,
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`2004; 60/582,690, filed Jun. 23, 2004; 60/609,719 filed Sep.
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`13, 2004; 60/611,789 filed Sep. 20, 2004; 60/540,511 filed
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`Jan. 29, 2004; 60/533,933 filed Dec. 31, 2003; 60/536,865
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`filed Jan. 15. 20, 2004; and filed Dec. 31, 2003 60/533,947
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`and is a continuations-in—part ofU.S. patent application Ser.
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`No. 10/949,738 filed Sep. 24, 2004 now abandoned which in
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`turn is a continuation-in—part of U.S. patent application Ser.
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`No. 10/772,943 filed Feb. 4, 2004; which in turn claims
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`benefit ofU.S. application Ser. Nos. 60/445,186 filed Feb. 4,
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`2003 now abandoned 60/506,015 filed Sep. 24, 2003; 60/533,
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`933; and 60/536,865; furthermore the ’738 application claims
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`benefit of U.S. application Ser. Nos.: 60/506,015; 60/533,
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`933; and 60/536,865. Each of these applications is incorpo-
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`rated herein by reference as if set forth in full herein including
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`any appendices attached thereto.
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`FIELD OF THE INVENTION
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`Embodiments of the present invention relate to micro-
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`probes (e.g. for use in the wafer level testing of integrated
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`circuits, such as memory or logic devices), and more particu—
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`larly related to cantilever microprobes. In some embodi-
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`ments, microprobes are fabricated using electrochemical fab-
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`rication mcthods (c.g. EFAB® fabrication proccsscs).
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`BACKGROUND OF THE INVENTION
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`A technique for forming three-dimensional structures (e.g.
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`parts, components, devices, and the like) from a plurality of
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`adhered layers was invented by Adam L. Cohen and is known
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`as Electrochemical Fabrication. It is being commercially pur-
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`sued by Microfabrica® Inc. (formerly MEMGen corpora-
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`tion) of Van Nuys, Califomia under the name EFAB®. This
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`technique was described in U.S. Pat. No. 6,027,630, issued on
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`Feb. 22, 2000. This electrochemical deposition technique
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`allows the selective deposition of a material using a unique
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`masking technique that involves the use of a mask that
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`includes patterned conformable material on a support struc-
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`ture that is independent of the substrate onto which plating
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`will occur. When desiring to perform an electrodeposition
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`using the mask,
`the conformable portion of the mask is
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`brought into contact with a substrate while in the presence of
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`a plating solution such that the contact of the conformable
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`portion of the mask to the substrate inhibits deposition at
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`selected locations. For convenience, these masks might be
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`generically called conformable contact masks; the masking
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`technique may be generically called a conformable contact
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`mask plating process. More specifically, in the terminology of
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`Microfabrica® Inc. (formerly MEMGen Corporation) ofVan
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`Nuys, California such masks have come to be known as
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`INSTANT MASKSTM and the process known as INSTANT
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`MASKINGTM or INSTANT MASKTM plating. Selective
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`depositions using conformable contact mask plating may be
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`used to form single layers of material or may be used to form
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`multi-layer structures. The teachings of the ’630 patent are
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`hereby incorporated herein by reference as if set forth in full
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`Page 40 of 55
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`Page 40 of 55
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`

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`US 7,511,523 B2
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`3
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`through third operations one or more times wherein the for-
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`mation of each subsequent layer treats the previously formed
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`layers and the initial substrate as a new and thickening sub-
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`strate.
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`Once the formation of all layers has been completed, at
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`least a portion of at least one of the materials deposited is
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`generally removed by an etching process to expose or release
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`the three-dimensional structure that was intended to be
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`formed.
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`The preferred method of performing the selective elec-
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`trodeposition involved in the first operation is by conformable
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`contact mask plating. In this type of plating, one or more
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`conformable contact (CC) masks are first formed. The CC
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`masks include a support structure onto which a patterned
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`conformable dielectric material is adhered or formed. The
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`conformable material for each mask is shaped in accordance
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`with a particular cross-section of material to be plated. At
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`least one CC mask is needed for each unique cross-sectional
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`pattern that is to be plated.
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`The support for a CC mask is typically a plate-like structure
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`formed of a metal that is to be selectively electroplated and
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`from which material to be plated will be dissolved. In this
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`typical approach, the support will act as an anode in an elec-
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`troplating process. In an alternative approach, the support
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`may instead be a porous or otherwise perforated material
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`through which deposition material will pass during an elec—
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`troplating operation on its way from a distal anode to a depo-
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`sition surface. In either approach, it is possible for CC masks
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`to share a common support, i.e. the patterns of conformable
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`dielectric material for plating multiple layers ofmaterial may
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`be located in different areas of a single support structure.
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`When a single support structure contains multiple plating
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`patterns, the entire structure is referred to as the CC mask
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`while the individual plating masks may be referred to as
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`“submasks”. In the present application such a distinction will
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`be made only when relevant to a specific point being made.
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`In preparation for performing the selective deposition of
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`the first operation, the conformable portion of the CC mask is
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`placed in registration with and pressed against a selected
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`portion of the substrate (or onto a previously formed layer or
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`onto a previously deposited portion of a layer) on which
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`deposition is to occur. The pressing together of the CC mask
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`and substrate occur in such a way that all openings, in the
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`conformable portions of the CC mask contain plating solu-
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`tion. The conformable material of the CC mask that contacts
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`the substrate acts as a barrier to electrodeposition while the
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`openings in the CC mask that are filled with electroplating
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`solution act as pathways for transferring material from an
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`anode (e.g. the CC mask support) to the non-contacted por-
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`tions of the substrate (which act as a cathode during the
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`plating operation) when an appropriate potential and/or cur-
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`rent are supplied.
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`An example of a CC mask and CC mask plating are shown
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`in FIGS. 1A-1C. FIG. 1A shows a side view ofa CC mask 8
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`consisting of a conformable or deformable (e.g. elastomeric)
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`insulator 10 patterned on an anode 12. The anode has two
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`functions. One is as a supporting material for the patterned
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`insulator 10 to maintain its integrity and alignment since the
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`pattern may be topologically complex (e.g., involving iso-
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`lated “islands” of insulator material). The other function is as
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`an anode for the electroplating operation. FIG. 1A also
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`depicts a substrate 6 separated from mask 8. CC mask plating
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`selectively deposits material 22 onto a substrate 6 by simply
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`pressing the insulator against the substrate then electrodepos—
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`iting material through apertures 26a and 26b in the insulator
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`as shown in FIG. 1B. After deposition, the CC mask is sepa-
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`rated, preferably non—destructively, from the substrate 6 as
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`4
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`shown in FIG. 1C. The CC mask plating process is distinct
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`from a “through-mask” plating process in that in a through-
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`mask plating process the separation of the masking material
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`from the substrate would occur destructively. As with
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`through-mask plating, CC mask plating deposits material
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`selectively and simultaneously over the entire layer. The
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`plated region may consist of one or more isolated plating
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`regions where these isolated plating regions may belong to a
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`single structure that is being formed or may belong to mul-
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`tiple structures that are being formed simultaneously. In CC
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`mask plating, as individual masks are not
`intentionally
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`destroyed in the removal process, they may be usable in
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`multiple plating operations.
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`Another example of a CC mask and CC mask plating is
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`shown in FIGS. 1D-1G. FIG. 1D shows an anode 12' sepa-
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`rated from a mask 8' that includes a patterned conformable
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`material 10' and a support structure 20. FIG. 1D also depicts
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`substrate 6 separated from the mask 8'. FIG. 1E illustrates the
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`mask 8‘ being brought into contact with the substrate 6. FIG.
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`1F illustrates the deposit 22' that results from conducting a
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`current from the anode 12' to the substrate 6. FIG. 1G illus-
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`trates the deposit 22' on substrate 6 after separation from
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`mask 8'. In this example, an appropriate electrolyte is located
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`between the substrate 6 and the anode 12' and a current of ions
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`coming from one or both of the solution and the anode are
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`conducted through the opening in the mask to the substrate
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`where material
`is deposited. This type of mask may be
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`referred to as an anodeless INSTANT MASKTM (AIM) or as
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`an anodeless conformable contact (ACC) mask.
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`Unlike through-mask plating, CC mask plating allows CC
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`masks to be formed completely separate from the fabrication
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`of the substrate on which plating is to occur (e.g. separate
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`from a three-dimensional
`(3D) structure that
`is being
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`formed). CC masks may be formed in a variety of ways, for
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`example, a photolithographic process may be used. All masks
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`can be generated simultaneously prior to structure fabrication
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`rather than during it. This separation makes possible a simple,
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`low-cost, automated, self-contained, and intemally-clean
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`“desktop factory” that can be installed almost anywhere to
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`fabricate 3D structures, leavi