`Mail Stop Patent Board
`Patent Trial and Appeal Board
`U.S. Patent and Trademark Office
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`
`Declaration of Jacob Robert Munford
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`
`Yasuharu Hosaka et al.
`In re Patent of:
`9,298,057 Attorney Docket No.: 12732-1925IP1
`U.S. Patent No.:
`March 29, 2016
`
`Issue Date:
`Appl. Serial No.: 13/939,323
`
`Filing Date:
`July 11, 2013
`
`Title:
`DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING
`THE DISPLAY DEVICE
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1
`
`SEL 2012
`Bluehouse v. SEL
`IPR2018-01405
`
`

`

`1. My name is Jacob Robert Munford. I am over the age of 18, have personal
`
`knowledge of the facts set forth herein, and am competent to testify to the
`
`same.
`
`2. I earned a Master of Library and Information Science (MLIS) from the
`
`University of Wisconsin-Milwaukee in 2009. I have over ten years of
`
`experience in the library/information science field. Beginning in 2004, I
`
`have served in various positions in the public library sector including
`
`Assistant Librarian, Youth Services Librarian and Library Director. I have
`
`attached my Curriculum Vitae as Appendix A.
`
`
`
`
`
`3. During my career in the library profession, I have been responsible for
`
`materials acquisition for multiple libraries. In that position, I have cataloged,
`
`purchased and processed incoming library works. That includes purchasing
`
`materials directly from vendors, recording publishing data from the material
`
`in question, creating detailed material records for library catalogs and
`
`physically preparing that material for circulation. In addition to my
`
`experience in acquisitions, I was also responsible for analyzing large
`
`collections of library materials, tailoring library records for optimal catalog
`
`2
`
`

`

`search performance and creating lending agreements between libraries
`
`during my time as a Library Director.
`
`
`
`4. I am fully familiar with the catalog record creation process in the library
`
`sector. In preparing a material for public availability, a library catalog record
`
`describing that material would be created. These records are typically
`
`written in Machine Readable Catalog (herein referred to as MARC) code
`
`and contain information such as a physical description of the material,
`
`metadata from the material’s publisher and date of library acquisition. In
`
`particular, the 008 field of the MARC record is reserved for denoting the
`
`creation of the library record itself. As this typically occurs during the
`
`process of preparing materials for public access, it is my experience that an
`
`item’s MARC record accurately indicates the date of an item’s public
`
`availability.
`
`
`5. I have reviewed Exhibit SEL2004, a book by John F. Wager entitled
`
`Transparent Electronics published by Springer in 2008.
`
`
`
`6. Attached hereto as Appendix WA01 is a true and correct copy of scans of
`
`the cover, publishing data, title page and table of contents for Transparent
`
`3
`
`

`

`Electronics from the University of Pittsburgh. I secured these scans from the
`
`library’s onsite holdings.
`
`
`
`7. In comparing Appendix WA01 to Exhibit SEL2004, it is my determination
`
`that Exhibit SEL2004 is a true and correct copy of Transparent Electronics
`
`by John F. Wager.
`
`
`
`8. Attached hereto as Appendix WA02 is a true and correct copy of the MARC
`
`record for Transparent Electronics from the University of Pittsburgh’s
`
`library. I secured this record from the library’s online catalog.
`
`
`
`9. The 008 field of Transparent Electronics MARC record included in
`
`Appendix WA02 indicates that Transparent Electronics was first recorded
`
`by University of Pittsburgh as of June 19, 2008. Based on this information, it
`
`is my determination that Transparent Electronics would have been made
`
`accessible and publicly available soon after it was received on June 19,
`
`2008.
`
`
`10. I have reviewed Exhibit SEL2008, a book by S.M. Sze entitled Physics of
`
`Semiconductor Devices published by Wiley in 1981.
`
`
`
`4
`
`

`

`11. Attached hereto as Appendix SZ01 is a true and correct copy of scans of the
`
`cover, publishing data, title page and table of contents for Physics of
`
`Semiconductor Devices from the University of Pittsburgh. I secured these
`
`scans from the library’s onsite holdings.
`
`
`
`12. In comparing Appendix SZ01 to Exhibit SEL2008, it is my determination
`
`that Exhibit SEL2008 is a true and correct copy of Physics of Semiconductor
`
`Devices by S.M. Sze.
`
`
`
`13. Attached hereto as Appendix SZ02 is a true and correct copy of the MARC
`
`record for Physics of Semiconductor Devices from the University of
`
`Pittsburgh’s library. I secured this record from the library’s online catalog.
`
`
`
`14. The 008 field of Physics of Semiconductor Devices MARC record included
`
`in Appendix SZ02 indicates that Physics of Semiconductor Devices was first
`
`recorded by University of Pittsburgh as of January 26, 1981. Based on this
`
`information, it is my determination that Physics of Semiconductor Devices
`
`would have been made accessible and publicly available soon after it was
`
`received on January 26, 1981.
`
`
`
`5
`
`

`

`15. I have reviewed Exhibit SEL2009, a book by Jean-Pierre Colinge entitled
`
`Physics of Semiconductor Devices published by Springer in 2006.
`
`
`
`16. Attached hereto as Appendix CO01 is a true and correct copy of scans of the
`
`cover, publishing data, title page and table of contents for Physics of
`
`Semiconductor Devices from Carnegie-Mellon University. I secured these
`
`scans from the library’s onsite holdings.
`
`
`
`17. In comparing Appendix CO01 to Exhibit SEL2009, it is my determination
`
`that Exhibit SEL2009 is a true and correct copy of Physics of Semiconductor
`
`Devices by Jean-Pierre Colinge.
`
`
`
`18. Attached hereto as Appendix CO02 is a true and correct copy of the MARC
`
`record for Physics of Semiconductor Devices from Carnegie-Mellon
`
`University’s library. I secured this record from the library’s online catalog.
`
`
`
`19. The 008 field of Physics of Semiconductor Devices MARC record included
`
`in Appendix CO02 indicates that Physics of Semiconductor Devices was first
`
`recorded by Carnegie-Mellon University as of January 19, 2006. Based on
`
`this information, it is my determination that Physics of Semiconductor
`
`6
`
`

`

`Devices would have been made accessible and publicly available soon after
`
`it was received on January 19, 2006.
`
`
`20. I have reviewed Exhibit SEL2010, a book edited by John Daintith entitled A
`
`Dictionary of Chemistry published by Oxford University Press in 2008.
`
`
`
`21. Attached hereto as Appendix DA01 is a true and correct copy of scans of the
`
`cover, publishing data, title page and table of contents for A Dictionary of
`
`Chemistry from the Carnegie Library of Pittsburgh. I secured these scans
`
`from the library’s onsite holdings.
`
`
`
`22. In comparing Appendix DA01 to Exhibit SEL2010, it is my determination
`
`that Exhibit SEL2010 is a true and correct copy of A Dictionary of
`
`Chemistry by John Daintith.
`
`
`
`23. Attached hereto as Appendix DA02 is a true and correct copy of the MARC
`
`record for A Dictionary of Chemistry from the Carnegie Library of
`
`Pittsburgh’s library. I secured this record from the library’s online catalog.
`
`
`
`24. The 008 field of A Dictionary of Chemistry MARC record included in
`
`Appendix DA02 indicates that A Dictionary of Chemistry was first recorded
`
`7
`
`

`

`by the Carnegie Library of Pittsburgh as of June 26, 2008. Based on this
`
`information, it is my determination that A Dictionary of Chemistry would
`
`have been made accessible and publicly available soon after it was received
`
`on June 26, 2008.
`
`
`
`
`
`25. I have reviewed Exhibit SEL2011, a book entitled McGraw-Hill Dictionary
`
`of Scientific and Technical Terms published by McGraw-Hill in 2002.
`
`26. Attached hereto as Appendix MC01 is a true and correct copy of the MARC
`
`record for McGraw-Hill Dictionary of Scientific and Technical Terms from
`
`George Mason University’s library. I secured this record from the library’s
`
`online catalog.
`
`
`
`27. In comparing the description included within the MARC record of Appendix
`
`MC01 to Exhibit SEL2011, it is my determination that Exhibit SEL2011 is a
`
`true and correct copy of McGraw-Hill Dictionary of Scientific and Technical
`
`Terms.
`
`
`
`28. The 008 field of McGraw-Hill Dictionary of Scientific and Technical Terms
`
`MARC record included in Appendix MC01 indicates that McGraw-Hill
`
`8
`
`

`

`Dictionary of Scientific and Technical Terms was first recorded by George
`
`Mason University as of June 19, 2002. Based on this information, it is my
`
`determination that McGraw-Hill Dictionary of Scientific and Technical
`
`Terms would have been made accessible and publicly available soon after it
`
`was received on June 19, 2002.
`
`
`29. I have been retained on behalf of the Patent Owner to provide assistance in
`
`the above-illustrated matter in establishing the authenticity and public
`
`availability of the documents discussed in this declaration. I am being
`
`compensated for my services in this matter at the rate of $100.00 per hour
`
`plus reasonable expenses. My statements are objective, and my
`
`compensation does not depend on the outcome of this matter.
`
`30. I declare under penalty of perjury that the foregoing is true and correct. I
`
`hereby declare that all statements made herein of my own knowledge are
`
`true and that all statements made on information and belief are believed to
`
`be true; and further that these statements were made the knowledge that
`
`willful false statements and the like so made are punishable by fine or
`
`imprisonment, or both, under Section 1001 of Title 18 of the United States
`
`Code.
`
`
`
`
`
`9
`
`

`

`
`Dated: 12/5/18
`
`
`
`
`
`Jacob Robert Munford
`
`
`
`
`
`
`
`
`
`
`
`10
`
`

`

`APPENDIX A
`
`APPENDIX A
`IPR2018-01405
`
`IPR2018-01405
`
`11
`
`11
`
`

`

`Appendix A - Curriculum Vitae
`
`Education
`
`University of Wisconsin-Milwaukee - MS, Library & Information Science, 2009
`Milwaukee, WI
`● Coursework included cataloging, metadata, data analysis, library systems,
`management strategies and collection development.
`● Specialized in library advocacy and management.
`
`Grand Valley State University - BA, English Language & Literature, 2008
`Allendale, MI
`● Coursework included linguistics, documentation and literary analysis.
`● Minor in political science with a focus in local-level economics and
`government.
`
`Professional Experience
`
`Library Director, February 2013 - March 2015
`Dowagiac District Library
`Dowagiac, Michigan
`● Executive administrator of the Dowagiac District Library. Located in
`Southwest Michigan, this library has a service area of 13,000, an annual
`operating budget of over $400,000 and total assets of approximately
`$1,300,000.
`● Developed careful budgeting guidelines to produce a 15% surplus during the
`2013-2014 & 2014-2015 fiscal years.
`● Using this budget surplus, oversaw significant library investments including
`the purchase of property for a future building site, demolition of existing
`buildings and building renovation projects on the current facility.
`● Led the organization and digitization of the library's archival records.
`● Served as the public representative for the library, developing business
`relationships with local school, museum and tribal government entities.
`
`12
`
`

`

`● Developed an objective-based analysis system for measuring library services
`- including a full collection analysis of the library's 50,000+ circulating
`items and their records.
`
`
`November 2010 - January 2013
`Librarian & Branch Manager, Anchorage Public Library
`Anchorage, Alaska
`● Headed the 2013 Anchorage Reads community reading campaign including
`event planning, staging public performances and creating marketing
`materials for mass distribution.
`● Co-led the social media department of the library's marketing team, drafting
`social media guidelines, creating original content and instituting long-term
`planning via content calendars.
`● Developed business relationships with The Boys & Girls Club, Anchorage
`School District and the US Army to establish summer reading programs for
`children.
`
`June 2004 - September 2005, September 2006 - October 2013
`Library Assistant, Hart Area Public Library
`Hart, MI
`● Responsible for verifying imported MARC records and original MARC
`cataloging for the local-level collection as well as the Michigan Electronic
`Library.
`● Handled OCLC Worldcat interlibrary loan requests & fulfillment via
`ongoing communication with lending libraries.
`
`Professional Involvement
`
`Alaska Library Association - Anchorage Chapter
`● Treasurer, 2012
`
`Library Of Michigan
`● Level VII Certification, 2008
`● Level II Certification, 2013
`
`13
`
`

`

`Michigan Library Association Annual Conference 2014
`● New Directors Conference Panel Member
`
`Southwest Michigan Library Cooperative
`● Represented the Dowagiac District Library, 2013-2015
`
`Professional Development
`
`Library Of Michigan Beginning Workshop, May 2008
`Petoskey, MI
`● Received training in cataloging, local history, collection management,
`children’s literacy and reference service.
`
`Public Library Association Intensive Library Management Training, October 2011
`Nashville, TN
`● Attended a five-day workshop focused on strategic planning, staff
`management, statistical analysis, collections and cataloging theory.
`
`Alaska Library Association Annual Conference 2012 - Fairbanks, February 2012
`Fairbanks, AK
`● Attended seminars on EBSCO advanced search methods, budgeting,
`cataloging, database usage and marketing.
`
`14
`
`

`

`APPENDIX WA01
`
`APPENDIX WA01
`IPR2018-01405
`
`IPR2018-01405
`
`15
`
`15
`
`

`

`'
`
`‘
`
`Immugllglggslmmwmum ‘
`
`". 7:. r
`
`_.r'
`
`, r
`
`'I.‘
`
`
`
`Transparent
`
`Electronics
`
`
`
`16
`
`

`

`
`
`EEG.x812.
`
`332
`
`222039
`
`53832
`
`17
`
`17
`
`

`

`
`
`18
`
`

`

`
`
`19
`
`19
`
`

`

`Transparent Electronics
`
`20
`
`20
`
`

`

`
`
`Transparent Electronics
`
`John F. Wager
`School ofElectrical Engineering and Computer Science
`Oregon State University
`1148 Kelley Engineering Center
`Corvallis, Oregon 97331-5501
`
`Douglas A. Keszler
`Department of Chemistry
`Oregon State University
`010/153A Gilbert Hall
`
`Corvallis, Oregon 97331-4003
`
`Rick E. Presley
`School ofElectrical Engineering and Computer Science
`Oregon State University
`1148 Kelley Engineering Center
`Corvallis, Oregon 97331—5501
`
`@ Springer
`
`
`
`21
`
`21
`
`

`

`John F. Wager
`Oregon State University
`School of Electrical Engineering & Computer Science
`l I48 Kelley Engineering Center
`Corvallis, OR 97331-550l
`
`Douglas A. Keszler
`Oregon State University
`Department of Chemistry
`Ol0/153A Gilbert Hall
`Corvallis, OR 9733l-4003
`
`Rick E. Presley
`Oregon State University
`School of Electrical Engineering & Computer Science
`I I48 Kelley Engineering Center
`Corvallis, OR 9733l-550l
`
`ISBN 978-0-387-7234l-9
`
`c-ISBN 978-0-387-72342-6
`
`Library of Congress Control Number: 20079327l 8
`
`© 2008 Springer Science+Business Media, LLC
`All rights reserved. This work may not be translated or copied in whole or in pan without the written
`pemtission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street. New York,
`NY l0013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in
`connection with any form of information storage and retrieval, electronic adaptation. computer
`software. or by similar or dissimilar methodology now know or hereafter developed is forbidden. The
`use in this publication of trade names, trademarks. service marks and similar terms, even ifthey are not
`identified as such. is not to be taken as an expression of opinion as to whether or not they are subject to
`proprietary rights.
`
`Printed on acid-free paper.
`
`9 8 7 6 5 4 3 2 l
`
`springemzom
`
`22
`
`22
`
`

`

`
`
`
`
`Table of Contents
`
`Preface ...................................................................................................... vii
`
`1 Introduction ............................................................................................. 1
`
`1.1 A technology in a hurry .................................................................... l
`1.2 Pre—history ........................................................................................ 2
`1.2.1 Transparent conducting oxides (TCOs) ..................................... 2
`1.2.2 Thin-film transistors (TFTS) ...................................................... 5
`1.3 The stage is now set .......................................................................... 8
`
`2 A Review of Prior Work ......................................................................... 9
`
`2.1 Origins .............................................................................................. 9
`2.1.1 Transparent electronics — 2003 ................................................ 13
`2.1.2 Transparent electronics - 2004 ................................................ 17
`2.1.3 Transparent electronics — 2005 ................................................ 25
`2.1.4 Transparent electronics - 2006 ................................................ 30
`2.2 Perspective & Outlook .................................................................... 37
`
`3 Applications ........................................................................................... 39
`3.] Looking into a crystal ball .............................................................. 39
`3.2 A technology appraisal ................................................................... 39
`3.3 An application smorgasbord ........................................................... 44
`3.4 Applications in retrospective .......................................................... 56
`
`4 Materials ................................................................................................ 57
`
`4.1 Device components ......................................................................... 57
`4.2 n—type semiconductor channel materials ......................................... 58
`4.3 Amorphous oxide semiconductors ................................................. 67
`4.4 p-type semiconductors .................................................................... 71
`4.4.1 Copper oxides and chalcogenides ............................................ 71
`4.4.2 Rhodium oxides ....................................................................... 76
`4.4.3 Nanomaterials .......................................................................... 77
`
`4.4.4 Prospects for p-type semiconductors
`in transparent electronics ......................................................... 77
`
`23
`
`23
`
`

`

`Table of Contents
`vi
`—————____—_—__—_
`
`4.5 Dielectrics ....................................................................................... 78
`4.5.1 Gate dielectrics ........................................................................ 78
`4.5.2 Interlevel dielectrics ................................................................ 82
`
`5 Devices .................................................................................................. .83
`5.1 Transparent electronics devices ...................................................... 83
`5.2 Passive, linear devices .................................................................... 84
`5.2.1 Resistors .................................................................................. 84
`5.2.2 Capacitors ................................................................................ 87
`5.2.3 Inductors .................................................................................. 89
`5.3 Two-terminal devices ..................................................................... 91
`5.3.1 pn junctions ............................................................................. 91
`5.3.2 Schottky barriers ...................................................................... 94
`5.3.3 Heterojunctions ...................................................................... 102
`5.3.4 Metal-insulator-semiconductor (MIS) capacitors .................. 105
`5.4 Transparent thin-film transistors (TTFTS) .................................... 1 10
`5.4.1 Ideal behavior ........................................................................ 111
`5.4.2 Non—ideal behavior ................................................................ 1 15
`5.4.3 Device stability ...................................................................... 138
`5.4.4 Alternative TTFT device types .............................................. 144
`5.5 Alternative transistors ................................................................... 148
`
`6 Transparent Circuits .......................................................................... 153
`6.1 Introduction .................................................................................. 153
`6.2 Exemplary transparent circuit process flow ................................. 153
`6.2.1 Transparent ring oscillator process flow................................ 153
`6.2.2 Other considerations .............................................................. 156
`6.3 Exemplary transparent circuits ..................................................... 160
`6.3.1 Transparent inverters and ring oscillators .............................. 160
`6.3.2 Full-wave rectifier ................................................................. 163
`6.3.3 Level-shifting circuits ............................................................ 164
`6.3.4 AMLCD transparent switch ................................................... 165
`6.3.5 AMOLED backplane ............................................................. 168
`6.3.6 Transparent charge-coupled devices (CCDs) ........................ 178
`6.4 Barely scratching the surface ........................................................ 182
`
`7 The Path Forward ............................................................................... 183
`7.1 Where do we go from here? . ........................................................ 183
`
`References ............................................................................................... 189
`
`Index ....................................................................................................... 209
`
`24
`
`24
`
`

`

`
`
`2 1 Introduction
`
`ent electronics ‘killer apps’ are admittedly either not yet well-defined or
`are presently unrealizable due to current limitations in transparent electron-
`ics or in a requisite auxiliary technology. However, this topical ordering
`inversion is meant to be intentionally provocative. Since transparent elec-
`tronics is a nascent technology, we believe that its development will be
`most rapidly and efficiently accomplished if it
`is strongly application-
`driven, and if it is undertaken in a parallel fashion in which materials, de-
`vices, circuits, and system development are pursued concurrently. Hope-
`fully, such a product-driven concurrent development strategy will lead to
`rapid technology assessment, the identification of new and most-likely un-
`expected applications, and an expeditious commercial deployment of this
`technology.
`
`1.2 Pre-history
`
`Two primary technologies which preceded and underlie transparent elec-
`tronics are briefly overviewed. These topics are transparent conductive
`oxides (TCOs) and thin—film transistors (TFTs).
`
`1.2.1 Transparent conducting oxides (TCOs)
`
`TCOs constitute an unusual class of materials possessing two physical
`properties - high optical transparency and high electrical conductivity -
`that are generally considered to be mutually exclusive (Harmagel et al.
`1995). This peculiar combination of physical properties is only achievable
`if a material has a sufficiently large energy band gap so that it
`is non-
`absorbing or transparent to visible light, i.e., > ~3.l eV, and also possesses
`a high enough concentration of electrical carriers, i.e., an electron or hole
`concentration > ~10'9 cm‘3, with a sufficiently large mobility, > ~l cm2 V'
`'s", that the material can be considered to be a ‘good’ conductor of elec-
`tric1ty.
`
`The three most common TCOs are indium oxide In203, tin oxide SnOz,
`and zinc oxide 2110, the basic electrical properties of which are summa-
`rized in Table 1.1. All three of these materials have band gaps above that
`required for transparency across the full visible spectrum.
`
`Note that although the TCOS listed in Table 1.1 are considered to be
`‘good’ conductors from the perspective of a semiconductor, they are actu-
`ally very poor conductors compared to metals. For example, the conduc-
`
`25
`
`25
`
`

`

`1.2 Pro-history
`
`3
`
`tivities of tungsten W, aluminum Al, and copper Cu, are approximately
`100,000, 350,000, and 600,000 S cm", indicating that the best In203 con-
`ductivity (for indium tin oxide or ITO) is about a factor of 10 to 60 lower
`than that of a typical integrated circuit contact metal. The low conduc-
`tance of TCOs compared to metals has important consequences for both
`TCO and transparent electronics applications, some of which are explored
`in this book. The theoretical absolute limit of the conductivity for a TCO
`has been estimated to be 25,000 S cm'l (Bellingham 1992).
`
`Table 1.1. Electrical properties of common transparent conducting oxides
`(TCOs) Conductivities reported are for best-case polycrystalline films.
`
`Material
`
`Mobility
`Electron
`Conductivity
`Bandgap
`(cm2 V"
`concentration
`(eV)
`(S cm")
`
`_
`,
`._
`.. ___ ._..__._$1=21it‘).--.2.-.-.. fl.........
`3.75
`10,000
`>10-1
`35
`3.35
`8,000
`>102|
`20
`3.6
`5.000
`>1020
`15
`
`111203
`ZnO
`Sno2
`
`Returning to Table 1.], notice that all three of the TCOs included in this
`table are n-type, i.e., conductivity is a consequence of electron transport,
`and that the electron carrier concentration is strongly degenerate, i.e., the
`electron density exceeds that of the conduction effective band density of
`states by an appreciable amount (Pierret 1996; Sze and Ng 2007). All of
`the well-known and commercially relevant TCOs are n-type. p-type TCOs
`are a relatively new phenomenon and their conductivity performance is
`quite poor compared to that of n-type TCOs. To a large extent, the poor
`conductivity of p-type TCOs is due to the very low mobility of these mate-
`rials, typically less than ~l cm2 V's", compared to mobilities in the range
`of~10—40 cm2 V's" for n—type TCOs.
`
`The n-type mobilities indicated in Table 1.1 are quite small compared to
`those representative single crystal silicon materials and devices, which
`range from ~250—l,500 cm2 V's". However, this mobility comparison be-
`tween TCOs and single crystal silicon is a bit misleading since single crys-
`tal silicon mobility is not usually specified at doping concentrations as
`large as those typical of TCOs.
`In fact,
`it is reported that single crystal
`silicon mobility is independent of doping concentration above ~10l9 cm'i,
`with an electron mobility of~90 cm2 V's" and a hole mobility of~50 cm!
`V'ls" (Baliga 1995). A low mobility at high carrier concentrations is, to a
`large extent, a consequence of intense ionized impurity scattering associ-
`ated with high doping concentrations (Hartnagel et 31.1995).
`
`26
`
`26
`
`

`

`
`
`
`DATE DUE
`
`27
`
`27
`
`

`

`APPENDIX WA02
`
`APPENDIX WA02
`IPR2018-01405
`
`IPR2018-01405
`
`28
`
`28
`
`

`

`11/28/2018
`
`Staff Info
`
` Dnline Catalog of the University of Pittsburgh Libraries
`
`_.
`
`'I
`
`I )1 I
`
`I Cat
`
`E-Z Borrow
`
`Find Articles
`
`Help
`
`Other Libraries
`
`Ask Us
`
`Library Home Page
`
`Search
`
`5:39?
`
`Edit Search
`
`Get it!
`
`My Account
`
`Search Request: Title = transparent electronics
`Search Results: Displaying 1 of 3 entries
`
`Next P
`
`Brief Info Detailedlnfo iStafflnfo!
`
`Transparent electronics John F. Wager, Douglas A. Keszler, Rick E. Presley.
`
`000 04337cam a22003617a 450
`
`001 6586590
`
`005 20170413163643.0
`
`006 m d
`
`007 cr n
`
`008 08061952008 nyua sb 001 0 eng d
`
`015 _ la GBA774913 I2 bnb
`
`015 _ la 07,N30,1209 I2 dnb
`
`016 7_ la 013950172 |2 Uk
`
`016 7_ la 984808140 I2 DE-101
`
`020 _ la 9780387723419 (hbk.
`
`: acid-free paper)
`
`020 _ la 0387723412 (hbk.
`
`: acid-free paper)
`
`035 _ la (WaSeSS)ssj0000261722
`
`040_ la UKM lc UKM ld YDXCP ld BTCTA ld BAKER ld ORE ld OHX ld cus ld VLB ld DEBSZ ld HDC ld OCLCO ld
`DLC ld WaSeSS
`
`042 _ la Iccopycat
`
`050 00 la TK7835 lb .W284 2008
`
`082 04 la 621.38152 |2 22
`
`100 1_ la Wager, John F. lq (John Fisher)
`
`245 10 la Transparent electronics lh [electronic resource] / lc John F. Wager, Douglas A. Keszler, Rick E. Presley.
`
`260 _ la New York : lb Springer, lc c2008.
`
`300_ la viii, 212 p.
`
`; lb ill.
`
`;
`
`lo 24 cm.
`
`504 _ la Includes bibliographical references (p. [189]-208) and index.
`
`505 00 lg 1.1 |tA technology in a hurry lg 1 -- lg 1.2 lt Pre-history lg 2 -- lg 1.2.1 lt Transparent conducting oxides
`(TCOs) lg 2 -- lg 1.2.2 It Thin-film transistors (TFTs) lg 5 —- lg 1.3 It The stage is now set lg 8 -- lg 2 It A
`Review of Prior Work lg 9 -- lg 2.1 It Origins lg 9 -- lg 2.1.1 It Transparent electronics -- 2003 lg 13 -- lg 2.1.2
`It Transparent electronics -- 2004 lg 17 -- lg 2.1.3 It Transparent electronics -- 2005 lg 25 -- lg 2.1.4 It
`Transparent electronics -- 2006 lg 30 -- lg 2.2 It Perspective & Outlook lg 37 -- lg 3 It Applications lg 39 -- lg
`3.1 lt Looking into a crystal ball lg 39 -- lg 3.2 It A technology appraisal lg 39 -- lg 3.3 It An application
`smorgasbord lg 44 -- lg 3.4 It Applications in retrospective lg 56 -- lg 4 It Materials lg 57 -- lg 4.1 It Device
`components lg 57 -- lg 4.2 It n-type semiconductor channel materials lg 58 -- lg 4.3 It Amorphous oxide
`semiconductors lg 67 -- lg 4.4 It p-type semiconductors lg 71 -- lg 4.4.1 lt Copper oxides and chalcogenides lg
`
`https://pittcat.pitt.edu/cgi-bin/Pwebrecon.cgi?v3=1&ti=1,1&SEQ=20181128171734&Search%5FArg=transparent%20electronics&Search%5FCode=TA...
`
`1/2
`
`29
`
`29
`
`

`

`11/28/2018
`
`Staff Info
`
`71 -- lg 4.4.2 It Rhodium oxides lg 76 -- lg 4.4.3 It Nanomaterials lg 77 -- lg 4.4.4 It Prospects for p-type
`semiconductors in transparent electronics lg 77 -- lg 4.5 It Dielectrics lg 78 -- lg 4.5.1 It Gate dielectrics lg 78 --
`lg 4.5.2 It Interlevel dielectrics lg 82 -- lg 5 It Devices lg 83 —- lg 5.1 It Transparent electronics devices lg 83 —-
`lg 5.2 lt Passive, linear devices lg 84 -- lg 5.2.1 lt Resistors lg 84 -- lg 5.2.2 lt Capacitors lg 87 -- lg 5.2.3 lt
`Inductors lg 89 -- lg 5.3 ltTwo-terminal devices lg 91 -- lg 5.3.1 It pn junctions lg 91 -- lg 5.3.2 It Schottky
`barriers lg 94 -- lg 5.3.3 It Heterojunctions lg 102 -- lg 5.3.4 lt Metal-insulator-semiconductor (MIS) capacitors
`lg 105 -- lg 5.4 lt Transparent thin-film transistors ('I'I'FI'S) lg 110 -- lg 5.4.1 lt Ideal behavior lg 111 -- lg 5.4.2
`lt Non-ideal behavior lg 115 -— lg 5.4.3 It Device stability lg 138 -- lg 5.4.4 It Alternative 'l'l'l-‘l' device types lg
`144 -- lg 5.5 It Alternative transistors lg 148 -- lg 6 It Transparent Circuits lg 153 -- lg 6.2 It Exemplary
`transparent circuit process flow lg 153 -- lg 6.2.1 It Transparent ring oscillator process flow lg 153 -- lg 6.3 It
`Exemplary transparent circuits lg 160 -- lg 6.3.1 It Transparent inverters and ring oscillators lg 160 -- lg 6.3.2 It
`Full-wave rectifier lg 163 —- lg 6.3.3 It Level-shifting circuits lg 164 -- lg 6.3.4 It AMLCD transparent switch lg
`165 -- lg 6.3.5 It AMOLED backplane lg 168 -- lg 6.3.6 It Transparent charge-coupled devices (CCDs) lg 178 --
`lg 6.4 It Barely scratching the surface lg 182 -- lg 7 It The Path Forward lg 183.
`520 _ la "Transparent electronics is an emerging technology that employs wide band-gap semiconductors for the
`realization of invisible circuits. This monograph provides the first roadmap for transparent electronics, identifying
`where the field is, where it is going, and what needs to happen to move it forward. Although the central focus of
`this monograph involves transparent electronics, many of the materials, devices, circuits, and process-integration
`strategies discussed herein will be of great interest to researchers working in other emerging fields of
`optoelectronics and electronics involving printing, large areas, low cost, flexibility, wearability, and fashion and
`design." - Back cover.
`
`650 _0 la Transparent electronics.
`
`700 1_ la Keszler, Douglas A., Id 1957-
`
`700 1_ la Presley, Rick E.
`
`856 40 lz Pitt users please click through to access via SpringerLink ebooks - Chemistry and Materials Science (2008) lu
`http://pitt.idm.oclc.org/login?url=https://|ink.springer.com/openurl?genre=book&isbn=978-0-387-72341-9
`
`920 _ la Serials Solutions Ebook
`
`Next P
`
`Print/Save/Email
`
`Enter your email address: Save results for later: ‘ Save to Bookbag ‘
`
`Select Download Format
`
`V
`
`Print or Save _ Save Search to My Account
`
`Search
`
`Back To
`T'
`Itles
`
`Edit Search
`
`Get it!
`
`My Account
`
`https://pittcat.pitt.edu/cgi-bin/Pwebrecon.cgi?v3=1&ti=1,1&SEQ=20181128171734&Search%5FArg=transparent%20electronics&Search%5FCode=TA...
`
`2/2
`
`30
`
`30
`
`

`

`APPENDIX SZOl
`
`APPENDIX SZ01
`IPR2018-01405
`
`IPR2018-01405
`
`31
`
`31
`
`

`

`
`
` "R13-M15--S1B--T08
`
`31735820957886
`[WWMWWWMMWWWWWWWW
`
`eeeeeeeeeeeeeeee
`Pull Date:
`
`-Ask