`Semiconductor
`Devices ;
`2nd Edition
`
`
`
`SEL 2008
`Bluehouse v. SEL
`|PR2018—01405
`
`1
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`SEL 2008
`Bluehouse v. SEL
`IPR2018-01405
`
`
`
`Physics of
`Semiconductor Devices
`
`SECOND EDITION
`
`S. M. Sze
`
`Beii Laboratories, incorporated
`Murray Hill, New Jersey
`
`
`
`A WILEY-INTERSCIENCE PUBLICATION
`
`JOHN WILEY & SONS
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`New York - Chichester - Brisbane . Toronto - Singapore
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`Copyright © l98l by John Wiley & Sons, inc.
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`All rights reserved. Published simultaneoflsly in Canada.
`
`Reproduction or translation of any part of this work
`beyond that permitted by Sections 107 or ms of the
`1976 United States Copyright Act without the permission
`of the copyright owner is unlawful. Requests for
`permission or further information should be addressed to
`the Permissions Department, John Wiley 3; Sons. Inc.
`
`Library of Congress Cataloging in Publication Data:
`
`Sze, S. M., I936-
`Physics of semiconductor devices.
`“A Wiley-Interscience publication."
`Includes index.
`I. Semiconductors. I. Title.
`
`TK787I.85.S988 I98]
`
`$37.6‘22
`
`8l—2l3
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`Printed in the United States of America
`10 9 8 7 6 5 4
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`Contents
`
`12.3 Light-Emitting Diodes, 689
`12.4 Semiconductor Laser Physics, 704
`12.5 Laser Operating Characteristics, 724
`
`Chapter 13 Photodetectors
`
`Introduction, 743
`13.1
`13.2 Photoconductor, 744
`13.3 Photodiode, 749
`13.4 Avalanche Photodiode, 766
`13.5 Phototransistor, 782
`
`Chapter 14 Solar Cells
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`14.1
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`Introduction, 790
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`14.2 Solar Radiation and Ideal Conversion Efficiency, 791
`14.3 p-n Junction Solar Cells, 799
`14.4 Heterojunction, Interface, and Thin-Film Solar Cells, 816
`14.5 Optical Concentration, 830
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`APPENDIXES
`
`PFPNNPPP?
`
`List of Symbols, 841
`International System of Units, 844
`Unit Prefixes, 845
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`Greek Alphabet, 846
`Physical Constants, 847
`Lattice Constants, 848
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`Properties of Important Semiconductors, 849
`Properties of Ge, Si, and GaAs at 300 K, 4850
`Properties of SiOz and Si3N4 at 300 K, 851
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`743
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`790
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`839
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`INDEX
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`853
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`4
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`r
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`Hmmlunctlon, Interface, and ThIn-Fllm Solar Cells
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`819
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`be cmcientIy converted in the low-gap semiconductor. Figure 23 shows the
`malized spectral responses of several Ga1_,Al,As—GaAs solar cells, all
`firing the same junction depths and doping levels. As the composition x
`increases, the bandgap F3; increases; therefore, the spectral response extends
`to higher photon energies.
`.
`'
`.
`.
`One interesting hetermunction solar cell 15 the conducting glass—semi-
`conductor heterojunction. The conducting glasses include oxide semicon-
`ductors, such as indium oxide (In203, with E3 = 3.5 eV and electron aflinity
`X54l45eV), tin oxide (Sn02, with E3 =3.5 eV and electron affinity x =
`itieV). and the indium tin oxide (ITO, a mixture of In203 and SnOz, with
`53:3.7 eV and electron aflinity X = 4.2 to 4.5 eV). These oxide semicon-
`ductors in thin—film form have the unique properties of good electrical
`conductivity and high optical transparency. They serve not only as part of
`the heterojunction but also as an antireflection coating.
`The energy-band diagrams for an ITO/Si solar cell are shown29 in
`the insert of Fig. 24. The top layer is an n-type 4000 A ITO with
`5x10" fl-cm and the substrate is a 2 fl-cm p-type silicon. The curves in Fig.
`24 near 1 mA/cm2 are all parallel to each other. The slope d(ln J)/dV is about
`24V‘l independent of temperature. This slope suggests a multistep tunnel
`process in this heterojunction. Conversion efficiencies in the 12 to 15% range
`
`FORWARD BIAS
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`0
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`0.2
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`0.4
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`06
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`0.3
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`vF (VOLTS)
`:19-2‘_ Current-voltage characteristics of a ITO-Si heterojunction. The insert shows the
`and dlagram under forward bias. (After Sites. Ref. 29.)
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`5
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