Petitioner Bluehouse Global Ltd.
`Petitioner Bluehouse Global Ltd.
`
`Ex. 1001
`EX. 1001
`
`

`

`USOO9298057B2
`
`(12) United States Patent
`US 9,298,057 B2
`(10) Patent N0.:
`Hosaka et al.
`
`(45) Date of Patent: Mar. 29, 2016
`
`(54)
`
`(71)
`
`DISPLAY DEVICE AND ELECTRONIC
`DEVICE INCLUDING THE DISPLAY DEVICE
`
`(56)
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`Applicant: Semiconductor Energy Laboratory
`Co., Ltd., Atsugi-shi, Kanagawa-ken
`(JP)
`
`5,731,856 A
`5,744,864 A
`6,294,274 B1
`
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`
`Inventors:
`
`(72)
`
`Yasuharu Hosaka, Tochigi (JP);
`Yukinori Shima, Tatebayashi (JP);
`Kenichi Okazaki, Tochigi (JP); Shunpei
`Yamazaki, Setagaya (JP)
`
`(Continued)
`
`FOREIGN PATENT DOCUMENTS
`
`CN
`CN
`
`001450665
`101038932
`
`10/2003
`9/2007
`
`(73)
`
`Assignee: Semiconductor Energy Laboratory
`Co., Ltd., Kanagawa-ken (JP)
`
`(Continued)
`OTHER PUBLICATIONS
`
`(*)
`
`Notice:
`
`Subject to any disclaimer, the term of this
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 50 days.
`
`(21)
`
`Appl. N0.: 13/939,323
`
`(22)
`
`Filed:
`
`Jul. 11, 2013
`
`(65)
`
`(30)
`
`Prior Publication Data
`
`US 2014/0022479 A1
`
`Jan. 23, 2014
`
`Foreign Application Priority Data
`
`Jul. 20, 2012
`
`(JP) ................................. 2012-161344
`
`(51)
`
`(52)
`
`(58)
`
`Int. Cl.
`G02F 1/1345
`G02F 1/1368
`H01L 27/12
`G02F [/1333
`US. Cl.
`
`(2006.01)
`(2006.01)
`(2006.01)
`(2006.01)
`
`CPC .......... G02F 1/1368 (2013.01); G02F 1/13454
`(2013.01); H01L 27/1214 (2013.01); H01L
`27/1225 (2013.01); H01L 27/1248 (2013.01);
`G02F1/133345 (2013.01)
`Field of Classification Search
`None
`
`International Search Report (Application No. PCT/JP2013/069456)
`Dated Oct. 22, 2013.
`Written Opinion (Application No. PCT/JP2013/069456) Dated Oct.
`22, 2013.
`F0rtunat0.E et a1., “Wide-Bandgap High-Mobility ZnO Thin-Film
`Transistors Produced at Room Temperature,”, Appl. Phys. Lett.
`(Applied Physics Letters) , Sep. 27, 2004, vol. 85, N0. 13, pp. 2541-
`2543.
`
`(Continued)
`
`Primary Examiner 7 Richard Kim
`(74) Attorney, Agent, or Firm 7 Robinson Intellectual
`Property Law Office; Eric J. Robinson
`
`ABSTRACT
`(57)
`The display device includes a first substrate provided with a
`driver circuit region that is located outside and adjacent to a
`pixel region and includes at least one second transistor which
`supplies a signal to the first transistor in each of the pixels in
`the pixel region, a second substrate facing the first substrate,
`a liquid crystal layer between the first substrate and the sec-
`ond substrate, a first interlayer insulating film including an
`inorganic insulating material over the first transistor and the
`second transistor, a second interlayer insulating film includ-
`ing an organic insulating material over the first interlayer
`insulating film, and a third interlayer insulating film including
`an inorganic insulating material over the second interlayer
`insulating film. The third interlayer insulating film is pro-
`vided in part of an upper region ofthe pixel region, and has an
`edge portion on an inner side than the driver circuit region.
`
`See application file for complete search history.
`
`27 Claims, 11 Drawing Sheets
`
`166
`
`152
`
`l160162 156154
`
`150
`153 158 164
`
`
`
`
`
`
`
`X1
`
`.
`:
`:
`I
`I
`:
`I
`
`::::::::::::::::::::::::::::
`102
`
`103
`
`105
`
`113
`
`
`E
`:
`: 110104106 108112114116118
`I
`E
`I
`
`*1
`Y1
`
`101
`
`124122120107
`
`L=—140—:‘:‘#142
`
`BLUEHOUSE EXHIBIT 1001
`Page 2 of 34
`
`BLUEHOUSE EXHIBIT 1001
`Page 2 of 34
`
`

`

`US 9,298,057 B2
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`* cited by examiner
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`US. Patent
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`Mar. 29, 2016
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`US. Patent
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`Mar. 29, 2016
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`Sheet 3 of 11
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`US. Patent
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`Mar. 29, 2016
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`Sheet 6 of 11
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`US. Patent
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`Mar. 29, 2016
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`U.S. Patent
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`Mar. 29, 2016
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`Mar. 29, 2016
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`Sheet 9 of 11
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`US 9,298,057 B2
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`U.S. Patent
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`Mar. 29, 2016
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`Sheet 10 0f 11
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`US 9,298,057 B2
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`1
`DISPLAY DEVICE AND ELECTRONIC
`DEVICE INCLUDING THE DISPLAY DEVICE
`
`TECHNICAL FIELD
`
`The present invention relates to a display device using a
`liquid crystal panel or a display device using an organic EL
`panel. The present invention further relates to an electronic
`device including the display device.
`
`BACKGROUND ART
`
`In recent years, display devices using liquid crystal panels
`and display devices using organic EL panels have been under
`active development. These display devices are broadly clas-
`sified into display devices in which only a transistor for pixel
`control (pixel transistor) is formed over a substrate and a
`scanning circuit (driver circuit) is included in a peripheral IC
`and display devices in which a scanning circuit is formed over
`the same substrate as the pixel transistor.
`A display device in which a driver circuit is integrated with
`a pixel transistor is effective in reducing the frame width of
`the display device or cost of the peripheral IC. However, a
`transistor used in the driver circuit is required to have better
`electrical characteristics (e.g., field-effect mobility (uFE) or
`threshold) than the pixel transistor.
`A silicon-based semiconductor material is widely known
`as a material for a semiconductor thin film applicable to a
`transistor. As another material, an oxide semiconductor mate-
`rial has been attracting attention. For example, a transistor in
`which a semiconductor thin film is formed using an amor-
`phous oxide that contains indium (In), gallium (Ga), and zinc
`(Zn) and has an electron carrier concentration lower than
`lOlg/cm3 is disclosed (for example, see Patent Document 1).
`A transistor using an oxide semiconductor for a semicon-
`ductor layer has higher field-effect mobility than a transistor
`using amorphous silicon which is a silicon-based semicon-
`ductor material for a semiconductor layer. Hence, the transis-
`tor using an oxide semiconductor can operate at high speed
`and be suitably used for the display device in which a pixel
`transistor is integrated with a driver circuit. Besides, manu-
`facturing steps ofthe transistor using an oxide semiconductor
`are easier than those of a transistor using polycrystalline
`silicon for a semiconductor layer.
`However, a problem of the transistor using an oxide semi-
`conductor for a semiconductor layer is that entry of impurities
`such as hydrogen or moisture into the oxide semiconductor
`generates carriers and changes electrical characteristics ofthe
`transistor.
`
`To solve the above problem, a transistor whose reliability is
`improved by making the concentration of hydrogen atoms in
`an oxide semiconductor film used as a channel formation
`
`region of the transistor less than l><10l6 cm"3 is disclosed
`(e.g., Patent Document 2).
`
`REFERENCES
`
`Patent Document 1 : Japanese Published Patent Application
`No. 2006-165528
`
`Patent Document 2: Japanese Published Patent Application
`No. 2011-139047
`
`DISCLOSURE OF INVENTION
`
`As also described in Patent Document 2, to sufficiently
`maintain the electrical characteristics of the transistor using
`an oxide semiconductor film for a semiconductor layer, it is
`
`10
`
`15
`
`20
`
`25
`
`30
`
`35
`
`40
`
`45
`
`50
`
`55
`
`60
`
`65
`
`2
`
`important to remove hydrogen, moisture, and the like from
`the oxide semiconductor film as much as possible.
`Further, when transistors are used for both a pixel region
`and a driver circuit region in a display device, an electrical
`load on the transistor used for the driver circuit region is larger
`than that on the transistor used for the pixel region, although
`this depends on the driving method. Thus, electrical charac-
`teristics of the transistor used for the driver circuit region is
`important.
`In particular, a problem with display devices in which
`transistors using an oxide semiconductor film for a semicon-
`ductor layer are used for the pixel region and the driver circuit
`region has been deterioration of the transistor used for the
`driver circuit region, which occurs in a reliability test in a high
`temperature and high humidity environment. The cause ofthe
`deterioration of the transistor is an increase in the carrier
`
`density of the oxide semiconductor film used as the semicon-
`ductor layer due to entry ofmoisture or the like into the oxide
`semiconductor film from an organic insulating film formed
`over the transistor.
`
`In view of the above, an object of one embodiment of the
`present invention is to suppress changes in the electrical char-
`acteristics of a display device including transistors in a pixel
`region and a driver circuit region and improve the reliability
`of the display device. An object of one embodiment of the
`present invention is, in particular, to suppress entry of hydro-
`gen or moisture into the oxide semiconductor film in a display
`device using an oxide semiconductor film for a channel for-
`mation region of a transistor, suppress changes in the electri-
`cal characteristics of the display device, and improve its reli-
`ability.
`To achieve any ofthe above objects, one embodiment ofthe
`present invention provides a structure which can suppress
`changes in the electrical characteristics of transistors used for
`a pixel region and a driver circuit region in a display device.
`Specifically, one embodiment of the present invention pro-
`vides a structure in which, an oxide semiconductor film is
`used for a channel formation region of a transistor, and a
`planarization film formed with an organic insulating material
`over the transistor has a characteristic structure so that hydro-
`gen or moisture hardly enters the oxide semiconductor film,
`particularly the oxide semiconductor film used for the driver
`circuit region. The structure is more specifically described
`below.
`
`One embodiment of the present invention is a display
`device including a pixel region where a plurality of pixels
`each including a pixel electrode and at least one first transistor
`electrically connected to the pixel electrode is arranged, a first
`substrate provided with a driver circuit region that is located
`outside and adjacent to the pixel region and includes at least
`one second transistor which supplies a signal to the first
`transistor included in each of the pixels in the pixel region, a
`second substrate provided to face the first substrate, a liquid
`crystal layer interposed between the first substrate and the
`second substrate, a first interlayer insulating film including an
`i