`
`SEL 2008
`Bluehouse v. SEL
`
`1
`
`SEL 2008
`Bluehouse v. SEL
`IPR2018-01405
`
`
`
`Physics of
`Semiconductor Devices
`
`SECOND EDITION
`
`S. M. Sze
`
`Bell Laboratories, Incorporated
`Murray Hill, New Jersey
`
`
`
`A WILEY-INTERSCIENCE PUBLICATION
`
`JOHN WILEY & SONS
`
`New York * Chichester« Brisbane « Toronto « Singapore
`
`2
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`Copyright © 1981 by John Wiley & Sons, Inc.
`All rights reserved. Published simultaneously in Canada.
`Reproduction or translation of any part of this work
`beyond that permitted by Sections 107 or 108 of the
`1976 United States Copyright Act without the permission
`of the copyright owneris unlawful. Requests for
`permission or further information should be addressed to
`the Permissions Department, John Wiley & Sons, Inc.
`
`Library of Congress Cataloging in Publication Data:
`Sze, S. M., 1936-
`Physics of semiconductor devices.
`“A Wiley-Interscience publication.”
`Includes index,
`!. Semiconductors. I. Title.
`
`TK7871.85.S988 1981
`
`537,622
`
`81-213
`
`Printed in the United States of America
`10987654
`
`;
`
`-
`
`prepete.
`
`;
`
`
`
`
`
`3
`
`
`
`xil
`
`Contents
`
`12.3 Light-Emitting Diodes, 689
`12.4 Semiconductor Laser Physics, 704
`12.5 Laser Operating Characteristics, 724
`
`Chapter 13 Photodetectors
`
`Introduction, 743
`13.1
`13.2 Photoconductor, 744
`13.3 Photodiode, 749
`13.4 Avalanche Photodiode, 766
`13.5 Phototransistor, 782
`
`Chapter 14 Solar Cells
`
`Introduction, 790
`14.1
`14.2 Solar Radiation and Ideal Conversion Efficiency, 791
`14.3 p-n Junction Solar Cells, 799
`14.4 Heterojunction, Interface, and Thin-Film Solar Cells, 816
`14.5 Optical Concentration, 830
`
`APPENDIXES
`
`A. List of Symbols, 841
`International System of Units, 844
`Unit Prefixes, 845
`Greek Alphabet, 846
`Physical Constants, 847
`Lattice Constants, 848
`Properties of Important Semiconductors, 849
`Properties of Ge, Si, and GaAs at 300K, 850
`Properties of SiO. and SiN, at 300K, 851
`
`-rommoop
`
`INDEX
`
`743
`
`790
`
`839
`
`853
`
`4
`
`
`
`Yr
`
`819
`yeterojunction, Interface, and Thin-Film Solar Cells
`efficiently converted in the low-gap semiconductor. Figure 23 shows the
`ber
`zed spectral responses of several Ga,-,Al, As-GaAssolar cells,all
`gormall
`having the same junction depths and doping levels. As the composition x
`iqcreaseS, the bandgap Eg, increases; therefore, the spectral response extends
`to higher photon energies.
`One interesting heterojunction solar cell is the conducting glass—semi-
`conductor heterojunction. The conducting glasses include oxide semicon-
`juctors, such as indium oxide (In,Q3, with E, = 3.5 eV and electron affinity
`24.45 eV), tin oxide (SnQ2, with E, =3.5eV and electron affinity x =
`4geV), and the indium tin oxide (ITO, a mixture of In,O; and SnO:, with
`£,=3.7 eV and electron affinity y = 4.2 to 4.5eV). These oxide semicon-
`ductors in thin-film form have the unique properties of good electrical
`conductivity and high optical transparency. Theyserve not only as part of
`the heterojunction but also as an antireflection coating.
`The energy-band diagrams for an ITO/Si solar cell are shown” in
`the insert of Fig. 24. The top layer is an n-type 4000 A ITO with
`5x10 Q-cm and the substrate is a 2 2-cm p-typesilicon. The curvesin Fig.
`24near 1 mA/cm’areall parallel to each other. The slope d(In J)/dV is about
`24V7' independent of temperature. This slope suggests a multistep tunnel
`process in this heterojunction. Conversionefficiencies in the 12 to 15% range
`
`ITO/p-Si
`
`a
`
`a
`°
`
`7
`
`0
`
`°
`; °
`
`°
`
`350
`
`295
`
`250
`
`200 K
`
`10°!
`
`102
`
`oO
`NN
`
`=
`410
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`4
`
`10°
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`-6
`{0
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`4a *- 10°
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`eo
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`6
`
`FORWARD BIAS
`
`0
`
`0.2
`
`04
`
`a6
`
`a8
`
`Ve (VOLTS)
`:
`Ig. 24 Current-voltage characteristics of a ITO-Si heterojunction. The insert shows the
`band diagram under forward bias. (After Sites, Ref. 29.)
`
`5
`
`
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