`
`U8008835937B2
`
`(12) United States Patent
`(10) Patent N0.:
`US 8,835,937 B2
`Wirth et a1.
`(45) Date of Patent:
`Sep. 16, 2014
`
`(54) OPTOELECTRONIC COMPONENT, DEVICE
`COMPRISING A PLURALITY OF
`OPTOELECTRONIC COMPONENTS, AND
`METHOD FOR THE PRODUCTION OF AN
`OPTOELECTRONIC COMPONENT
`
`(75)
`
`Inventors: Ralph \Virth, Mintraching—Auhof (DE);
`Herbert Brunner, Sinzing (DE); Stefan
`
`Illek, Donaustauf (D3); Dieter Eissler,
`Nittendorf / Etterzhausen (DE)
`
`(73) Assignee: Osram Opto Semiconductors GmbH,
`Regensburg (D3)
`
`( * ) Notice:
`
`Subject to any disclaimer, the term of this
`patent is extended or adjusted under 35
`U.S.C. 154(1)) by 1634 days.
`
`(21) Appl. No.:
`
`10/588,167
`
`(22)
`
`PCT Filed:
`
`Feb. 18, 2005
`
`(86)
`
`PCT No.:
`
`PCT/DE2005/000281
`
`§ 371 (0)0),
`(2), (4) Date:
`
`Dec. 2, 2008
`
`(87)
`
`PCT Pub. No.: W02005/081319
`
`PCT Pub. Date: Sep. 1, 2005
`
`(65)
`
`(30)
`
`Prior Publication Data
`US 2009/0065800 A1
`Mar. 12, 2009
`
`Foreign Application Priority Data
`
`Feb. 20, 2004
`
`(DE)
`
`......................... 10 2004 008 853
`
`(51)
`
`Int. Cl.
`H01L 33/00
`H01L 31/0224
`H01L 33/38
`(52) U.S. Cl.
`CPC ..... H01L 31/022408 (2013.01); H01L 33/0079
`(2013.01); H01L 33/0095 (2013.01); H01L
`33/382 (2013.01): H01L 31/022416 (2013.01)
`
`(2010.01)
`(2006.01)
`(2010.01)
`
`USPC .......... 257/79; 257/98; 257/99: 257/333062;
`
`2570733065; 257/1733.066; 257/733069;
`438/22; 438/42
`
`(58) Field of Classification Search
`USPC ........................... 257/103, 99. 94, 96, 97, 98,
`257/173305571733059, 1733.062; 438/22,
`438/26, 46, 212, 213
`Sec application file for complete search history.
`
`(56)
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`5/1999 Manabe et all.
`5,905,276 A
`5,977,565 A * 11/1999 lshikavva ct al.
`
`................ 257/81
`
`(Continued)
`
`FOREIGN PATENT DOCUMENTS
`
`CN
`DE
`
`1372329
`43 36 891
`
`10/2002
`5/1994
`
`.............. H01L 33/00
`
`(Continued)
`OTHER PUBLICATIONS
`
`Office Action for Japanese Patent Application No. 2006-553430
`dated Jun. 16, 2011.
`
`(Continued)
`Primary Examiner 7 Erniias Woldegeorgis
`(74) Attorney, Agent, or l'i'rm 7 Fish & Richardson RC.
`
`ABS TRACT
`(57)
`Disclosed is an optoelectronic component (1) comprising a
`semiconductor function region (2) with an active zone (400)
`and a lateral main direction ofextension, said semiconductor
`function region including at least one opening (9, 27, 29)
`through the active zone, and there being disposed in the
`region ofthe opening a connecting conductor material (8) that
`is electrically isolated (10) from the active zone in at least in
`a subregion ofthe opening. Further disclosed are a method for
`producing such an optoelectronic component and a device
`comprising a plurality of optoclcctronic componcnts. The
`component and the device can be produced entirely Oil-wafer.
`
`20 Claims, 20 Drawing Sheets
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US 8,835,937 B2
`
`Page 2
`
`(56)
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`6,066,861 A
`RF36,747 F
`6,278,136 B1*
`
`5/2000 Hohn elal
`6/2000 Manabe etal,
`8/2001 Nitta ............................... 257/99
`
`6831524 Bl *
`6,633,120 B2
`1,276,742 B2
`2001/0042865 A1 *
`2002/0117681 A1
`2003/0044872 A1
`2004/0012958 A1
`
`3/2001 Ymmoto 61111
`10/2003 Sralam ........................... 313/499
`10/2007 hohno et a1.
`11/2001 Oshio et all
`257/100
`8/2002 Weeks et a1.
`3/2003 Olcuda et 21.
`1/2004 Hashimoto et al,
`
`2004/0217360 A1 3%
`2005/0012109 A1 *
`2005/0056855 A1
`
`11/2004 Negley """""""
`1/2005 Kohno et all
`3/2005 Lin et a1.
`
`FOREIGN PATENT DOCUMENTS
`
`
`
`257/79
`11 257/103
`
`DE
`EP
`JP
`JP
`JP
`JP
`W0
`
`W0
`W0
`W0
`
`10 2004012219
`1 460 694
`2001-339100
`2002-64112
`03-177080
`2004-530289
`W0 98/12757
`
`wo 02/069410
`W0 03/044872
`W0 0,0448” A1 *
`3
`/“
`
`6/2005
`9/2004
`12/2001
`2/2002
`6/2003
`9/2003
`3/1998
`
`9/2002
`5/2003
`5/2003
`
`............ H01L 33/00
`H01L 21/56
`.. H01L 33/00
`
`H01L 21/28
`
`.............. H01L 33/00
`
`OTHER PUBLICATIONS
`
`Notice of Allowance for Korean Patent Application No. 10-2012-
`7015400 dat dA 29 2013 .3
`_
`6
`“‘3'
`~
`1 Page”
`Authorized officer: Warner, A., International Search Report, PCT/
`DE2005/000281, Jul. 18, 2005,
`
`DE
`
`100 17336
`
`10/2001
`
`* cited by examiner
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 1 of 20
`
`US 8,835,937 B2
`
`F|G1
`
`1 F
`
`IGZ
`
`19
`
`17
`
`15
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 2 of 20
`
`US 8,835,937 B2
`
`FIG 3
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 3 of 20
`
`US 8,835,937 B2
`
`FIG 4A
`400 200
`Eat-iii
`I
`I400
`
`FIG 48
`
`FIG 4C
`5
`
`7
`
`9
`
`7
`
`5m 2
`
`400
`
`2
`
`300
`
`FIG 40
`
`7
`
`7
`
`5
`
`9
`
`a; XW
`
`5
`
`5
`
`2
`
`12—3"
`
`400
`
`2
`
`300
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 4 of 20
`
`US 8,835,937 B2
`
`
`
`300
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 5 of 20
`
`US 8,835,937 B2
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 6 of 20
`
`US 8,835,937 B2
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 7 of 20
`
`US 8,835,937 B2
`
`
`500
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 8 of 20
`
`US 8,835,937 B2
`
`500
`
`500
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 9 of 20
`
`US 8,835,937 B2
`
`*\
`
`NN
`
`In
`
`FIG?
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 10 of 20
`
`US 8,835,937 B2
`
`FIG 8
`
`19
`
`17
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 11 of 20
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`US 8,835,937 B2
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`
`200
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 12 of 20
`
`US 8,835,937 B2
`
`FIG QE
`
`8
`
`26
`
`6
`
`2
`
`400
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 13 of 20
`
`US 8,835,937 B2
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`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 14 of 20
`
`US 8,835,937 B2
`
`FIG ‘IOD
`
`200
`
`FIG 10E
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 15 of 20
`
`US 8,835,937 B2
`
`FIG 10F
`
`
`
`FIG 10H2
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 16 of 20
`
`US 8,835,937 B2
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`FIG 10!
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 17 of 20
`
`US 8,835,937 B2
`
`FIG 1OJ
`
`
`
`
`
`100Ipm
`250 pm15650 um-_ll
`
`
`—_l——ll| ‘0 120m.
`
`
`
`
`''Fii‘imuv- 80
`
`
`
`17
`
`
`
`AL
`
`18
`
`A 1010 pm
`-1050 um
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 18 of 20
`
`US 8,835,937 B2
`
`720
`710
`FIG 11A
`
`700{
`
`_—
`
`- 200
`
`400
`
`300
`
`F|G11B
`
`200
`
`300 300
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 19 of 20
`
`US 8,835,937 B2
`
`FIG 11D
`
`
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US. Patent
`
`Sep. 16, 2014
`
`Sheet 20 of 20
`
`US 8,835,937 B2
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`FIG 11G
`
`41-0a12
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US 8,835,937 B2
`
`1
`OPTOELECTRONIC COMPONENT, DEVICE
`COMPRISING A PLURALITY OF
`OPTOELECTRONIC COMPONENTS, AND
`METHOD FOR THE PRODUCTION OF AN
`OPTOELECTRONIC COMPONENT
`
`CROSS-REFERENCE TO RELATED
`APPLICATIONS
`
`This application is the National Stage of International
`Application No. PCT/DE2005/000281,
`filed on Feb.18,
`2005, which claims the priority to German Patent Application
`Serial No.10 20040088535, filed on Feb.20, 2004. The con-
`tents of both applications are hereby incorporated by refer-
`ence in their entireties.
`
`FIELD OF TI IF, INVENTION
`
`The invention concerns an optoelectronic component com-
`prising a semiconductor function region with an active zone
`and a lateral main direction of extension, a device comprising
`a plurality of optoelectronic components and a method for
`producing an optoelectronic component.
`
`BACKGROUND OF THE INVENTION
`
`The production of conventional optoelectronic compo-
`nents of this kind usually requires individual preparatory
`steps, such as, for example, placing the semiconductor func-
`tion region or a semiconductor chip containing the semicon-
`ductor function region in a housing, contacting the semicon-
`ductor chip With external interconnects or bonding wires or
`overmolding the semiconductor chip with a protective enve—
`lope. Individual preparatory steps are usually cost-intensive
`compared to processing steps, which can be performed con-
`currently on a large number of items.
`'lhe semiconductor function regions can for example be
`created from a semiconductor layer sequence in the wafer
`composite, which contains the semiconductor layer sequence
`disposed on a carrier layer. The wafer composite is then
`usually singulated into semiconductor chips, which can be
`processed further in individual processing steps for optoelec-
`tronic components.
`Furthermore, With conventional components it is often dif-
`ficult to create very flat structures due to the use of bonding
`Wire to contact the semiconductor function region. The arc of
`the bonding Wire is often relatively high and can be a major
`determinant of the height of an optoelectronic component. In
`addition, a housing created separately from the semiconduc-
`tor layer sequence Will often have much larger spatial dimen-
`sions than the semiconductor layer sequence and can make it
`difficult to implement small optoelectronic components.
`
`SUMMARY OF THE INVENTION
`
`One object of the invention is to specify an optoelectronic
`component and a device comprising a plurality of optoelec—
`tronic components that can be produced in a simplified and
`low-cost manner,
`together with a simplified production
`method for optoelectronic components.
`An inventive optoelectronic component comprises, in a
`first embodiment, a semiconductor function region with an
`active zone and a lateral direction of extension, said semicon-
`ductor function region being provided with at least one open-
`ing through the active zone and there being disposed in the
`
`2
`region of the opening a connecting conductor material that is
`electrically isolated from the active zone in at least a subre-
`gion of the opening.
`According to a further embodiment of the invention, the
`optoelectronic component comprises a semiconductor func—
`tion region With an active zone and a lateral main direction of
`extension, the semiconductor function region being provided
`with a lateral side face bounding the active zone and there
`being disposed after the side face in the lateral direction a
`connecting conductor material that is electrically isolated
`from the active zone at least in a subregion of the side face.
`The side face can optionally bound the semiconductor func—
`tion region laterally. The side face can in particular partially
`bound the semiconductor function region in the lateral direc-
`tion. Furthermore, the side face can be fashioned as planar,
`i.e. substantially devoid of any bulges or indentations, par-
`ticularly any depression in the lateral direction.
`Preferably disposed after the semiconductor function
`region is a layer of a molding compound that can be imple—
`mented as self-supporting or mechanically load-bearing. This
`layer of molding compound can further be implemented in
`the form of an envelope, an encapsulating element or a stabi-
`lization layer, as will be described in more detail hereinafter.
`An inventive component can advantageously be produced
`essentially or entirely Oil-wafer. The number of compara-
`tively cost—intensive and/or labor—intensive individual pro—
`cessing steps can advantageously be reduced With an inven-
`tive optoelectronic component. Particularly advantageously,
`individual processing steps can be eliminated.
`In the context of the invention, the term “wafer compos-
`ite”1 is considered to be a semiconductor layer sequence that
`is disposed on a carrier layer during the production of the
`optoelectronic component and is provided for creating a plu—
`rality of semiconductor function regions. During the produc-
`tion of the component, the semiconductor function regions
`are formed on the carrier layer from regions of the semicon-
`ductor layer sequence at least partially on-wafer. The carrier
`layer can be constituted by or comprise a growth substrate on
`which the semiconductor layer sequence was produced, for
`example epitaxially.
`1 'l'RANSLA'lOR’S NOTE: It should be noted mat the German phrase for
`“on-wafer” is, literally, “e the wafer composite” (im Wafeiverbund). The term
`“wafer composite” is therefore implicit in the phrase “on-wafer” here.
`It should be noted that in the context of the invention, the
`opening can also be an opening through the active zone,
`produced in the semiconductor layer sequence on—Vvafer dur-
`ing the fabrication of the optoelectronic component.
`In particular, a contact structure serving to electrically
`contact the finished optoelectronic component can be pro-
`duced at least partially, preferably entirely, on-Wafer. The
`contacting of the optoelectronic component is preferably
`elTected at least partially via the electrically conductive con-
`necting conductor material, which can be disposed in the
`region of the opening through the active zone or in the region
`of the side face bounding the active zone right on-wafer. The
`connecting conductor material contains for example a metal,
`such as Au, Al, Ag, Ti, Pt, Sn or an alloy comprising at least
`one of these materials.
`In a preferred embodiment ofthe invention, the connecting
`conductor material is spaced apart from the semiconductor
`function region in the lateral direction, particularly in the
`region of the active zone, thereby reducing the risk of a short
`circuit when the component is in operation. To this end, the
`connecting conductor material can be arranged in a, particu-
`larly lateral, edge region of the semiconductor function
`region and/or can be spaced apart from the side face.
`
`10
`
`I5
`
`20
`
`25
`
`30
`
`35
`
`40
`
`45
`
`50
`
`55
`
`60
`
`65
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US 8,835,937 B2
`
`3
`In a further preferred embodiment of the invention, the
`semiconductor fimction region is provided with at least one
`depression in the lateral direction, which particularly prefer-
`ably at
`lea st partially surrounds the opening through the
`active zone. In particular, the opening can be configured as a
`depression in the semiconductor function region in the lateral
`direction and/or the side face can be provided with a depres-
`sion in the lateral direction.
`According to the invention, the opening can be configured
`particularly in the form of a recess that does not penetrate all
`the way through the semiconductor function region or a gap
`that does penetrate all the way through the semiconductor
`function region, in which case the recess or gap can at least
`partially, preferably completcly, surround or constitute the
`opening through the active zone.
`The opening preferably extends in the vertical direction,
`substantially perpendicularly to the lateral main direction of
`extension of the semiconductor function region, through the
`entire semiconductor function region. For example, the open—
`ing is configured for this purpose as a gap in the semiconduc-
`tor function region.
`The connecting conductor material is preferably at least
`partially electrically isolated from the active zone by an iso—
`lation material. The isolation material is preferably disposed,
`particularly directly, against the active zone in the region of
`the opening or side face and contains for example a silicon
`nitride, such as SiN or Si3N4, a silicon oxide, such as SiO or
`SiOz. or a silicon oxynitride, such as SiON.
`The isolation material preferably so lines the opening,
`particularly the depression, or the isolation material is pref-
`erably so disposed, particularly directly, on the side face, that
`the active zone is electrically isolated from the connecting
`conductor material by the isolation material. The risk of the
`active zone short circuiting across the connecting conductor
`material can be reduced in this fashion.
`Particularly preferably, at least nearly the entire wall ofthe
`opening is covered with the isolation material or at least
`nearly the entire side face is coated with the isolation mate—
`rial, thereby further reducing the risk of a short-circuit when
`the component is in operation.
`In addition, the connecting conductor material is prefer-
`ably disposed over nearly the entire vertical extent of the
`semiconductor function region, which can advantageously
`simplify the creation of the contact structure during the pro-
`duction of such an optoelectronic component on—wafer.
`A connecting conductor material that extends in the verti-
`cal direction along the entire semiconductor function region,
`particularly in combination with a suitably arranged isolation
`material, allows the optoelectronic component or its semicon-
`ductor function region to be contacted electrically in the
`vertical direction over the region of the active zone without
`increasing the risk of short circuits. This part of the contact
`structure of the optoelectronic component can advanta—
`geou sly be produced on-wafer.
`In a further preferred embodiment of the invention, the
`semiconductor fimction region is provided with a first main
`face and a second main face located oppositely from the first
`main face relative to the active zone, the semiconductor func—
`tion region preferably being electrically conductively con-
`nected to the connecting conductor material on the side com-
`prising the first main face.
`This can be effected for example via a first contact that is
`conductively connected to the semiconductor function region
`and to the connecting conductor material from the first main
`face side of the semiconductor function region. Such a first
`contact, for example containing a metal such as Au, Al, Ag, Pt,
`
`10
`
`15
`
`20
`
`25
`
`30
`
`'55
`
`40
`
`45
`
`50
`
`55
`
`60
`
`65
`
`4
`Ti, Sn or an alloy comprising at least one of these materials,
`such as AuGe, can also advantageously be produced on—
`wafer.
`By providing a conductive connection between the con—
`necting conductor material, which can extend in the region of
`the opening, in the depression or along the edge region of the
`semiconductor function region, particularly of the side face,
`in the vertical direction over the vertical extent of the semi-
`conductor function region, and the first contact. disposed on
`the first main face of the semiconductor function region, it
`becomes possible to electrically connect the first main face of
`the semiconductor function region from the second main face
`side.
`A connecting conductor, formed ofthe connecting conduc—
`tor material, and the first contact can optionally be fashioned
`in one piece, particularly using the exact same material.
`In an advantageous improvement of the invention, the con-
`necting conductor material is electrically isolated from the
`second main face of the semiconductor function region. The
`risk of short circuits can be further reduced in this way.
`In a further preferred embodiment of the invention, dis-
`posed on the second main face side is a second contact, for
`example containing a metal, such as Au, Al, Ag, Ti, Pt, Sn or
`an alloy comprising at least one of these materials, such as
`AuGe, which is electrically conductively connected to tie
`semiconductor function region on the second main face side,
`particularly for purposes of current injection.
`The optoelectronic component can be electrically con-
`nected via the first and the second contact. In particular, tie
`optoelectronic component can be configured as an SM] ) com-
`ponent (SMD: Surface Mountable Device). The component
`can also be provided for a hybrid module.
`A conductive connection between the first contact and t 1e
`connecting conductor material, which can extend from tie
`first to the second main face, forms with the second contac a
`contact structure that facilitates contacting the optoelectronic
`component from the second main face.
`Electrically contacting a component of this kind by means
`ofthe first and second contacts advantageously eliminates t 1e
`need for honding Wires, thereby advantageously reducing t 1e
`height of the component and facilitating the creation of
`smaller components. Furthermore, such a contact structure
`advantageously can be created on-wafer.
`It should be noted that the number of contacts is, of course,
`not limited to two, but rather a plurality ofcontacts or contact
`pairs can also optionally be provided.
`The optoelectronic component, particularly the semicon-
`ductor function region with the active zone, can be configured
`in the mamier of a radiation—emitting or radiation—receiving
`component, The active zone can accordingly be configured
`for generating electroluminescent radiation or for signal gen-
`eration via charge carriers produced by incident radiation in
`the active zone. The semiconductor function region can for
`example be configured in the manner of an LED chip, a laser
`diode chip with a lateral or vertical emission direction, or a
`photodiode chip. The first and second contacts are then pref-
`erably fashioned according to the two poles of a diode con-
`tact.
`
`
`
`The semiconductor function region, particularly the active
`zone, preferably contains at least one III-V semiconductor
`material, for example a material from a III-V semiconductor
`material system, such as InXGa},Al l_,,_),I’, InXGayAl1_X_yN or
`IanaJAl1 qflAs, where in each case Osxsl, Osysl and
`x+ysl.
`The optoelectronic component is preferably configured for
`radiation in the ultraviolet, visible or infrared region of the
`spectrum.
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US 8,835,937 B2
`
`5
`
`
`
`The material system InxGaJAl 1+) N, for example, is par-
`icularly well suited for radiation from the ultraviolet to the
`green region of the spectrum, while InXGayA11_x_yP,
`for
`example, is particularly well suited for radiation from the
`l-yc-y
`green-yellow to the red region and InIGaVAl
`As for radia-
`ion in the infrared region.
`The component can also be based on other materials that
`are not included in a III-v material system. For example, the
`semiconductor function region can contain Si, particularly for
`whotodiodes, or a lI-VI semiconductor material, or can be
`3ased on Si or II-VI semiconductor materials. With a III-V
`semiconductor material, however, it is easier to attain rela-
`ively high internal quantum efliciencies in the component.
`Since the active zone cannot generate or receive radiation
`in the region ofthe opening, the opening in the optoelectronic
`component preferably has such minimal dimensions laterally
`hat the area of the active zone available for generating or
`receiving radiation is as large as possible. This can be
`achieved by suitably configuring the opening.
`The opening and/or the depression in the semiconductor
`unction region is preferably dimensioned laterally such that
`he eomrecting conductor material or a connecting conductor
`comprising the comiecting conductor material has a conduc-
`ivity that is adapted to the particular configuration of the
`semiconductor function region. High-output components
`often entail higher conductivities than relatively low-output
`components . A lateral dimension ofthe opening or depression
`or of the connecting conductor material can range from the
`nanometer to the micrometer scale. A lateral dimension is for
`example 100 um, preferably 50 um or less, e.g. 100nm or 10
`um.
`A sufliciently high conductivity can optionally also be
`obtained by means of a plurality of openings with connecting
`conductor material disposed in them, or a suitably adapted
`combination of dimensioning and number of openings.
`In a further preferred embodiment of the invention, the
`optoelectronic component is provided with a window, dis-
`posed after the semiconductor function region, that is prefer-
`ably transparent to the radiation to be received or generated
`by the active zone and/or lies in the beam path ofthat radia-
`tion. The window can be provided to couple radiation into or
`out of the optoelectronic component.
`In a further preferred embodiment of the invention, the
`optoelectronic component is provided with an envelope that
`at least partially forms around or envelops the semiconductor
`unction region. The semiconductor function region can in
`oarticular be embedded in the envelope. The envelope can be
`aart of the Window and/or constitute the window. The enve-
`ope advantageously protects the semiconductor function
`region against harmful external influences, such as moisture,
`or example.
`The envelope is preferably implemented as radiation-trans-
`Jarent to a radiation to be generated or received by the active
`zone. This advantageously reduces any undesirable absorp—
`ion of radiation in the envelope.
`Further, the material ofthe envelope is preferably resistant
`o the radiation that is to be generated by or is incident on the
`active zone. The risk of efficiency-lowering discoloration or
`softening of the envelope can be reduced in this way.
`In a further advanta geou s improvement, the semiconductor
`unction region, particularly the active zone, is surrounded by
`an encapsulation that is preferablyiat least during the acti-
`vation and/or operation of the componentisub stantially
`ight, particularly hermetically tight, against harmful external
`influences such as moisture. The encapsulation, which can
`comprise the envelope and optionally one or more additional
`encapsulating elements, preferably completely surrounds the
`
`
`
`6
`semiconductor function region or active zone and advanta-
`geously increases the protection of the semiconductor func—
`tion region or the active zone against harmful external influ-
`enees.
`
`The encapsulation is also preferably configured such that
`the contacts of the optoelectronic component are electrically
`connectable preferably through the encapsulation. External
`interconnects or external interconnecting means can there-
`fore be part of the encapsulation. In particular, the optoelec—
`tronic component can be electrically conductively connected
`to conductive traces of a printed circuit board by means ofthe
`external interconnects. The component is preferably con-
`nected to the conductive traces via a solder connection.
`The encapsulation or the encapsulating elements are pref—
`erably configured at least in part such that the region between
`the encapsulation or the encapsulating element and the active
`zone, particularly in the beam path of the radiation to be
`generated or received, is substantially devoid of cavities. This
`reduces the risk of cavity—induced excessive jumps in refrac—
`tive index, with proportionately high reflection losses at inter-
`faces during the coupling of radiation out of or into the com-
`ponent.
`Elements participating in the encapsulation, such as for
`example the envelope and/or the window, can also advanta—
`geously be formed on-wa fer. Particularly advantageously, the
`entire encapsulation can be produced on-wafer.
`In a preferred embodiment of the invention, the encapsu-
`lation is so mechanically stable as to eliminate the need for an
`additional housing to protect the semiconductor function
`region and facilitate the creation ofvery small optoelectronic
`components in which the semiconductor function region is
`protectively encapsulated, preferably on all sides.
`The encapsulation or the elements of the encapsulation,
`such as for example the envelope, are preferably implemented
`at least in part so that they are at least temporarily stable
`against high temperatures, for example above 2000 C., pref-
`erably up to 3000 C., ofthe kind that occur during the solder-
`ing of the interconnects of the component, in order to avoid
`significantly increasing the risk of damage to the semicon—
`ductor function region and/or the envelope due to a soldering
`process.
`In a further preferred embodiment of the invention, dis-
`posed after the semiconductor function region is at least one
`absorbing material or phosphor. The phosphor or absorbing
`material can be provided or disposed, preferably directly, in,
`at or on the window, the envelope or the semiconductor func-
`tion region. The absorbing material or the phosphor is pref-
`erably implemented as powder.
`An absorbing material such as an organic dye can be pro—
`vided for example in a component configured as a radiation-
`receiving component. to act as a filtering material and thereby
`influence the sensitivity, e. g. the spectral sensitivity distribu-
`tion, of the radiation detector by virtue of absorption at suit-
`able, partieularly specified. wavelengths, from a radiation
`incident on the semiconductor function region. Advanta-
`geously, for example the spectral sensitivity distribution of an
`optoelectronic component configured as a radiation detector
`can be adjusted deliberately in this way.
`In the case of an optoelectronic component configured as
`an emitter, the phosphor can preferably absorb radiation of a
`wavelength k1 generated by the active zone and reemit it as
`radiation of a wavelength A2. Wavelength A2 is preferably
`greater than wavelength A] . Such an optoelectronic compo-
`nent can generate mixed—color light, particularly white light,
`whose color involves a mixture ofradiation ofwavelengths K 1
`and kl. Thus, a phosphor ofthis kind at least partially converts
`the radiation ofwavelength K1 into radiation ofwavelength A2
`
`10
`
`15
`
`20
`
`25
`
`30
`
`'55
`
`40
`
`45
`
`50
`
`55
`
`60
`
`65
`
`EVERLIGHT ELECTRONICS CO., LTD.
`Exhibit 1014
`
`

`

`US 8,835,937 B2
`
`7
`and is therefore often referred to as a conversion material,
`particularly a luminescence conversion material.
`Substances that can be used as luminescence conversion
`
`materials in this case are inorganic phosphors, doped garnets,
`Ce— or Tb—activated garnets. such as (for example YAGzCe,
`TAGzCe, TbYAG2Ce), alkaline earth sulfates or organic dyes.
`Suitable luminescence conversion materials are described for
`example in the document W09 8/l 2757, whose content in this
`regard is hereby incorporated by reference.
`Particularly suitable for generating white light is a phos—
`phor, particularly a YAG -based phosphor, which converts
`radiation generated in the semiconductor function region, for
`example in ultraviolet or blue region of the spectrum, for
`example into the yellow region of the spectrum. The con-
`verted and unconverted fractions of radiation can be mixed
`together to produce mixed-color, particularly white, light.
`In a preferred embodiment, the average particle size of the
`luminescence conversion material in a powder that is used can
`be no more than 30 um. An average particle size of between 2
`and 6 um has proven especially advantageous in this regard. It
`has been found that luminescence conversion can take place
`particularly efficiently with this particle size.
`The conversion material is preferably disposed as closely
`as possible to the active zone. The efficiency ofthe conversion
`can be increased in this way, since the intensity of the radia-
`tion generated by the active zone decreases quadratically with
`increasing distance from the active zone. This also makes it
`easier to optimize the extent of the color locus of the mixed—
`color radiation or its dependence on viewing angle. Convert-
`ing the radiation near the active zone into a low-energy radia-
`tion of greater wavelength can have a protective effect on an
`element surrounding or disposed after the conversion mate-
`rial. such as the envelope. The risk of radiation—induced dis—
`coloration ofthe envelope material by conversion in the vicin-
`ity of the active zone can be reduced in this way.
`In a further preferred embodiment, the phosphor is dis-
`posed, particularly directly, on the semiconductor function
`region. The phosphor can be implemented in the form of a
`phosphor layer. This facilitates particularly eflicient lumines-
`cence conversion near the active zone. The phosphor is pref—
`erably applied on—wafer to the semiconductor layer sequence
`or to the semiconductor function regions deriving from the
`semiconductor layer sequence. The phosphor can in particu-
`lar be applied by means of electrostatic forces. This advanta-
`geously applies analogously to the absorbing material.
`In a further advantageous embodiment of the invention,
`disposed after the semiconductor function region are one or
`more optical elements that advantageously influence the elli-
`ciency or the radiation or reception characteristic of the com-
`ponent. This optical element can be fashioned for example as
`a lens for beam shaping. The optical element can further be
`fashioned as a filtering or scattering element.
`In addition, the optical element can be fashioned as an
`antireflection layer or coating. Reflection losses caused by
`refractive index jumps can advantageously be reduced by
`means ofan antireflection coating. One or more M4 layers are
`particularly well suited for this purpose. For example, the
`antireflection coating can contain the materials listed above
`for the isolation material. These materials can in particular be
`identical and/or the antireflection coating and the isolation
`material can be configured as integrated int