COLUMBIA LIBRARIES OFFS1TE
`
`CU72103728
`TK7870.15 .E4222 1999 Electronic packaging
`
`ELECTRONIC
`PACKAGING
`Materials and
`Their Properties
`
`Michael G, Pecht
`Rakesh Agarwal
`Patrick McCluskey
`Terrance Dishongh
`Sirusjavadpour
`Rahul Mahajan
`
`ENGINEER
`TK
`« 7 8 7 0 . 1 5
`III W.A777
`
`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1015
`
`

`

`The Electronic Packaging Series
`
`Series Editor: Michael G. Pecht, University of Maryland
`
`Advanced Routing of Electronic Modules
`Michael Pecht and Yeun Tsun Wong
`
`Electronic Packaging Materials and Their Properties
`Michael Pecht, Rakesh Agarwal, Patrick McCluskey, Terrance Dishongh,
`Sims Javadpour, and Rahul Mahajan
`
`Guidebook for Managing Silicon Chip Reliability
`Michael Pecht, Riko Radojcic, and Gopal Rao
`
`High Temperature Electronics
`Patrick McCluskey, Thomas Podlesak, and Richard Grzybowski
`
`Influence of Temperature on Microelectronics and System Reliability
`Pradeep Lall, Michael Pecht, and Edward Hakim
`
`Long-Term Non-Operating Reliability of Electronic Products
`Michael Pecht and Judy Pecht
`
`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1015
`
`

`

`ELECTRONIC
`PACKAGING
`
`Michael G. Pecht
`CALCE Electronics Packaging Research Center
`University of Maryland College Park
`RakeshAgarwal
`Delco Electronics, Kokoma, Indiana
`Patrick McCluskey
`Terrance Dishongh
`Rahul Mahajan
`CALCE Electronics Packaging Research Center
`University of Maryland, College Park
`
`cpf
`
`CRC Press
`Boca Raton London New York Washington, D.C.
`
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`
`bi
`
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`I
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`
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`
`1
`
`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1015
`
`

`

`ZEROTH-LEVEL PACKAGING MATERIALS
`
`3.7
`
`Substrate* MCM-L
`laminated
`Description
`high
`density
`PCB
`
`good
`medium
`>15
`
`very good
`medium
`>50
`
`limited
`high
`>50
`
`limited
`medium
`5
`
`Table 24. High density substrates and selected attributes (Blood and Casey 1991)
`MCM-D/C MCM-Si
`MCM-D
`MCM-C
`SiC^
`deposited
`deposited
`cofired
`thin film on
`organic
`ceramic
`dielectric
`cofired
`thin film on
`with Si
`ceramic
`Si, ceramic
`substrate
`or metal
`limited
`high
`5
`
`100-150
`
`250^450
`
`25-75
`
`50-75
`
`25
`
`array
`
`fair
`
`3.0-3.5
`
`array
`
`poor
`
`9.7
`
`peripheral
`
`good
`
`<3.0
`
`array
`
`poor
`
`<3.0
`
`peripheral
`
`good
`
`3.5
`
`s
`
`:•
`
`2
`
`ilUK
`
`3 o
`I
`is
`R
`
`Maturity
`Cost
`Number of
`metal
`layers
`Minimum
`metal
`pitchfji m)
`Substrate
`I/O
`Heat
`transfer
`Dielectric
`constant
`* MCM - Multi Chip Module; L - Laminate; C - Ceramic; D - Deposit; SiCh - Silicon dioxide
`These substrates can be easily designed as a hermetic package using a
`built-in seal ring around the periphery. MCM-Cs using high-temperature
`cofired ceramic are characterized by high line resistance due to the low
`tungsten. MCM-C works well for high-I/O, medium-
`conductivity of
`performance modules such as 50MHz to 100MHz processor clocks. MCM-Cs
`with glass-ceramic dielectric materials fabricated with LTCC technology have
`low dielectric constants, low coefficients of thermal expansion (CTEs), and
`firing
`low
`low-resistivity conductor materials at
`compatibility witli
`temperatures. Cost effectiveness remains questionable because the conductor
`screen printing process limits (he achievable interconnect density.
`MCM-D consists of a substrate deposited with thin film on silicon,
`ceramic, or metal. MCM-D substrates are used in applications that require high
`electrical performance and high interconnection densities with a minimum
`number of substrate layers. The thin-film processing is accomplished on a rigid
`base material, usually silicon, alumina, or metal. Commonly used thin-film
`materials in MCM-D include lower-conductivity aluminum and organic
`dielectric materials because the processing is easy and reliable. Copper is used
`sometimes for its better conductivity. However, there is a reliability problem
`when uncured polyimide comes into contact with copper. The problem can be
`eliminated by adding barrier metals such as chromium or nickel. ^
`MCM-Si substrates use a silicon wafer, with a deposited thin-film of
`silicon dioxide as the dielectric, and aluminum or copper as the conductive
`materials. Small geometries, improved reliability (over organic dielectrics), the
`ability to incorporate decoupling capacitance (up to 42nF/cm sq) in the
`substrate, and high thermal conductivity of the substrate are the major
`
`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1015
`
`

`

`38
`
`ELECTRONIC PACKAGING MATERIALS AND THEIR PROPERTIES
`
`advantages. Additionally, the coefficient of thermal expansion match of a
`silicon substrate to silicon chips is a great advantage.
`MCM-D/C, with deposited thin film on cofired ceramic technology,
`is currently being produced only in Japan. It offers the best of ceramic and
`thin-film technologies and is an ideal choice for all types of modules. High
`cost is perhaps its only disadvantage.
`
`1
`
`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1015
`
`