Eric Bretschneider, Ph.D.
`
`2622 Westwind Dr
`Corinth, TX 76210
`
`Phone: +1 (248) 766-4665
`E-mail: eric@led.expert
`
`
`Skills Summary
` Successful Management and Team building with personnel at levels ranging from Sr. Scientists and
`Engineers to Technicians/Operators. Maximum Department size >100; Budget >$25 million/yr.
` Strong New Product Development background; over 100 new SSL products taken from concept to
`manufacturing, including regulatory, Energy Star certification and DLC certification.
` Excellent communication skills sales and sale support experience as evidenced by development of new 8+
`figure accounts for LED die, packages and applications. Proven ability
`to match customer
`demands/needs/desires with existing products.
` Comprehensive technical background in the full range of LED production technologies including MOCVD
`hardware/process, fabrication, LED chip/package test/reliability, optical design, thermal management, color
`conversion, SSL fixture/lamp design/integration and reliability.
` Direct Design and Development experience of LEDs
`fixtures/components using TracePro and SolidWorks.
`
`(structures, die, packages) and SSL
`
`
`
`Employment
`CTO; EB Designs & Technology Corinth, TX
`2014 –
` Design and development of innovative solid-state lighting technology and designs, with a primary focus
`on optical design, thermal design and production/assembly technologies.
` Manage technology roadmap and draft IP disclosures/patent filings.
` Provide technical support and conduct research/technology development for clients in the field of solid
`state lighting. This work additionally includes serving as an expert witness.
`Director of Engineering; HeathCo, LLC Bowling Green, KY
`2013 – 2014
` Managed Engineering Department Staff (11 domestic, 14 international); Responsibilities included
`preparation and administration of the department budget ($3.5 million annual). The department was
`charged with developed advanced technology/products related to: Solid State Lighting, Sensors,
`Notifications and Control Products and included regulatory/certifications for UL, FCC, Energy Star and
`DLC.
` Developed technology, IP and product roadmaps for all three business units (Lighting, Sensors,
`Notifications). Provided solid state lighting technology support for The Chamberlain Group.
` Additional responsibilities included establishing career development paths and training goals for all
`members of the department.
` Key accomplishments:
`o Led team for product recall issue dating back to 2006. Reduced recall scope (# units) by >80% and
`financial exposure by >85% through detailed investigation and analysis of production records and
`analysis of excess and obsolete inventory.
`o Completed review for entire product portfolio to comply with new cUL bi-lingual language
`requirements. Project required warning requirement changes to physical components (tooling),
`warning labels, documents and packaging on >400 products.
`Elec Tech International Zhuhai, Guangdong Province, P.R. China
`Chief Engineer ETi Lighting Research Institute
`VP Research & Development ETi Solid State Lighting
`2011 – 2013
` Managed Engineering and R&D staff for newly formed vertically integrated LED company (107
`Engineering, Scientists, Designers); responsibilities included preparation and administration of the
`department budget (>$25 million annual)
` Worked directly with President and CEO of the company to develop IP and product roadmaps for all
`LED based lighting products/projects for markets in the US, Europe, Japan and China.
` Key accomplishments:
`o Developed capability for fast turn functional prototypes (<2 weeks from concept to operating units).
`This was an improvement over the prior process that required 6+ weeks for a working prototype. Prior
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`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1014
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`

`

`to this the company lost ~50% of all opportunities that required functional prorotypes.
`o Supported product development and production ramps that enabled the company to increase sales
`from ~$10 million to >$40 million in one year.
`o Developed proprietary linear lamp technology capable of >1000 lumens/ft with a wall plug efficacy
`>100 lm/W, CRI>80 and L70>50,000 hrs (Ta = 25°C). Technology allows the same base units to be
`installed in fixtures as a replacement tube or used as individual luminaires with transverse spacing
`criteria ranging from 1.6 – 2.9.
`Lighting Science Group Corporation Satellite Beach, FL
`2010 - 2011 VP of Research
` Assembled and managed research and development teams for projects related to solid state lighting.
` Direct responsibility for design/development of customized photometric and radiometric characterization
`equipment.
` Direct responsibility for modeling and determining product and component lifetimes based on optical,
`thermal. mechanical and electrical analysis with respect to intended operating environments.
` Served as company representative on industry standards committees related to SSL technology (LM79,
`LM80, TM21, etc.)
` Key accomplishments:
`o Developed advanced LED models for product development and production control; including
`advanced color control schemes for multi-color applications. Methods capable of predicting average
`chromaticity to within combined Δxy ≤ 0.02; production variation < 2 step MacAdam ellipse.
`o Developed and characterized wavelength conversion materials, methods and technology. Work
`included development of optics and materials for L-Prize entry.
`2008 – 2010 Product Development Manager
` Tasked with developing Solid State Lighting products including: optical, mechanical and thermal design,
`design and process FMEA, oversight of initial production, development of quality system documents and
`requirements for internal production and out-sourced components. Projects ranged from individual efforts
`to team of 10+ employees
` Served as the primary technical resource for all OEM customers.
` Managed group responsible for all product certifications and standards requirements including UL, FCC,
`CE, Energy Star and DLC as well as IES lighting requirements for outdoor products.
` Responsible for development, calibration and maintenance of photometric equipment in development and
`production areas.
` Key accomplishments:
`o Completed fast track development and launch of OEM SSL acorn retrofit product (<5 months).
`Product exceeded all customer requirements including: lumen output, efficacy, thermal resistance and
`size. Developed second generation product with >100% increase in light output with now cost
`increase.
`o Completed design of Streetlight family (4 products) in 4 month span. Products achieved >90
`lumens/Watt efficacy at thermal stability with projected L70 lifetimes >80,000 hours at Ta=40°C
`(continuous).
`o Development replacement lamp family line (6 primary lamp types, 100+ variations). Product family
`included the first replacement LED lamps to achieve Energy Star certification. Product variations
`developed for LSG brand name and 3 OEM customers. Altogether the family accounted for >50% of
`the Energy Star certified LED lamps as of December 2011.
`
`
`2004 - 2008 Toyoda Gosei North America Troy, MI
`Sales Manager
` Primary responsibility for developing new and managing existing LED die and package customers for the
`Eastern region of North America. This required extensive communications with existing and potential
`customers to determine best fit products for their applications/requirements.
` Additional responsibility for search for and identifying new market opportunities for existing or newly
`developed products.
` Served as the primary technical resource for all customers in North/South America and Europe.
` Key accomplishments:
`o Secured two new 8 figure accounts in a new market niche. These customers designated as the only
`two priority customers for Toyoda Gosei world-wide. Sales ramped from $0 to >$100 million/yr in less
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`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1014
`
`

`

`than 18 months.
`o Secured sole supplier status for LED backlights in Apple - 9.9" (iPad), 15.4", 17" and 22" displays.
`This was the culmination of an 18 month campaign with the Apple Display group to find the best fit
`product for their requirement and to train Apple personnel on potential technical barriers/issues with
`their application.
`o Addressed Microsoft concerns about blue light hazards related to development of a next generation
`optical mouse. After three months, I was able to conclusively show to Microsoft that it would be
`impossible for 14mil die products to present a photo-biological hazard under both IEC 62471 and IEC
`60825.
`o Awarded business for all passenger lighting on the B787 Dreamliner. This award was made by Diehl
`which controls all lighting for Boeing, Airbus and Embraer and was achieved within 4 months of first
`contact with Diehl. At the time of first contact Diehl had no knowledge of Toyoda Gosei and had been
`working with 4 LED companies for over 12 months on the project.
`
`
`2003 – 2004 Beeman Lighting Sarasota, FL
`Director of Solid State Lighting Engineering
` Tasked with leading development of solid state lighting systems and materials with primary focus on chip
`on board applications and devices. Product lines included RGB landscape lighting and minimal
`environmental impact fixtures and novel display/artwork fixtures.
` Managed all IP issues (competitor analysis, IP roadmap, patentability analysis).
` Worked with existing and potential customers to ensure new products meet or exceed requirements and
`expectations.
` Key accomplishment
`o Developed RGB LED based landscape light with minimal environmental impact. This was accomplish
`by establishing a research project with FAU and included studies that conclusively showed the
`products had no impact on the behavior of sea turtle hatchlings.
`
`
`2003 University of South Florida Tampa, FL
`Intellectual Property Manager
` Managed IP portfolio of over 100 active patents and applications for University faculty/staff. Key portfolio
`items included: anti-cancer bioactive compounds, dendrimer synthesis and application technology, and
`spectral analysis of biological materials (blood analysis, surface and soluble protein analysis).
` Tasked with enhancing University reputation and revenue through negotiation of licensing agreements for
`IP
` Key accomplishments:
`o Negotiated license agreement for evaluation of new anti-cancer compounds derived from cold water
`tunicates.
`o Assembled team that included 3 corporate and 2 academic partners for the DARPA SUVOS
`program. This task was completed in one month and the resulting proposal was ranked 2nd overall
`out of a field of 34 entries and was noted by the reviewers as the only proposal to address each and
`every portion of the RFP.
`
`
`1998 – 2003 Uniroyal Optoelectronics Tampa, FL
`Director of Intellectual Property, University Relations & Government Contracts (2001 – 2003)
` Concurrent assignment as Sr. Epi Scientist.
` Tasked with establishing IP roadmap and track patent landscape related to MOCVD growth, chip/package
`design and applications for LED technology.
` Reviewed all production and R&D activities to identify potential IP. This included drafting initial disclosures
`and working with external counsel for patent filings and responses to office actions. Activities with external
`counsel further included development of opinions of non-infringement.
` Oversight and management of a $3.4 million multi-campus research program.
` Monitor and track RFP notices for externally funded research related to the company's core technology
`development roadmap.
` Key accomplishments:
`o Developed opinions of non-infringement with external counsel for 10 LED patents that had been the
`subject of numerous infringement suits against Tier 1 LED companies.
`
`3
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`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1014
`
`

`

`o Assembled team that included 3 corporate and 2 academic partners for the DARPA SUVOS
`program. This task was completed in one month and the resulting proposal was ranked 2nd overall
`out of a field of 34 entries and was noted by the reviewers as the only proposal to address each and
`every portion of the RFP.
`Team Leader, Epitaxial Materials & Characterization (1999 – 2001)
` Concurrent assignment as Sr. Epi Scientist.
` Oversaw start up and qualification of Epitaxial Growth & Characterization areas; role included training of Sr.
`Scientists, Engineers and Technicians for both areas in theory, application, process and maintenance
`procedures.
` Managed Epitaxial Growth & Characterization areas for production of InGaN and AlInGaP LED wafers.
`This included preparation and administration of the department budget (~$25 million annual) as well as
`setting department performance goals (total good wafers, wafer yield, performance improvements and unit
`production costs).
` Coordinate inventory levels with purchasing department to minimize value of inventory necessary to
`support production plan. Additionally negotiated key raw material specifications and prices.
` Served as Sr. member of Quality Team responsible for ISO9001 certification. Certification was achieved
`within a 12 month time span.
` Key accomplishments:
`o Completed process qualifications for all MOCVD systems within 3 months of CapEx delivery and
`established initial production yields 15% higher than the benchmark process transferred to UOE.
`o Managed departmental expansion and quality system efforts that allowed >250% increase in
`production capacity.
` Managed start up and qualification of Epitaxial Growth & Characterization areas; role included training of
`Engineers and technicians for both areas in theory, application, process and maintenance procedures.
`Sr. Epi Scientist (1999 – 2003)
` Primary responsibility for MOCVD hardware and process modifications necessary to support performance
`improvements, yield enhancements and cost reductions.
` Served as primary technology liaison with customers and investors.
` Tasked with technical oversight of all photometric/radiometric characterization.
` Responsible for LED chip and package optical/thermal design including wavelength conversion materials.
` Key accomplishments:
`o Resolved gold corrosion issue in Fab area. Also eliminated transparent contact failure mechanism.
`Combined efforts increased fabrication yield by >30%.
`o Modified hardware and epitaxial growth process to increase throughput of Epitaxial Growth &
`Characterization areas by 80% (9 hour to 5 hour cycle time), while cutting unit cost by >30%. Also
`reduced surface and interfacial roughness by a factor of >3x while improving thickness uniformity from
`4% to <2%, using DOE methods. Additional hardware modification increased throughput by another
`20%.
`o Developed new test methods to verify performance of LED structures prior to Fabrication. Methods
`allowed verification of optical power to within 15% and wavelength within 2 nm prior to beginning of
`fabrication.
`
`
`Staff Engineer (1998 – 1999)
` Designed/specified Epitaxial Growth & Characterization areas. This responsibility included specification
`and selection of all CapEx equipment for the Epitaxial Growth and Characterization areas and managing
`the construction, CapEx equipment installation and start up.
` Additional responsibilities included determining initial product cost and throughput based on installed
`CapEx tool base.
` Key accomplishments:
`o
`Implemented and validated new ammonia delivery system that allowed multiple MOCVD systems to
`draw from the same cylinder and eliminated downtime for cylinder changes. Implemented new
`exhaust management process for arsine/phosphine waste stream, extending maintenance interval by
`>300%.
`o Developed zero assumption cost and throughput models for LED facility. Cost estimate for 18 months
`post-start up proved accurate to within 10% of actual costs.
`
`
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`4
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`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1014
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`

`

`1996 – 1998 Emcore Corporation Somerset, NJ
`Process Engineer
` Responsible for installation, materials demonstration and production process qualification and transition into
`manufacturing of MOCVD systems in an ISO9000 manufacturing environment (6 systems in 18 months).
` Tasked with identifying cost reduction and throughput/yield enhancements for epitaxial growth processes.
` Member of internal Quality System audit team.
` Key accomplishments:
`o Developed MOCVD Tool Qualification Procedure for benchmarking and qualifying all MOCVD systems
`installed for internal corporate use as well as at customer locations world wide.
`o Completed Manufacturing Readiness Review for AlGaAs/Ge solar cell process in ~25% of standard
`time. Resulted in 3 year, $15 million supply contract for company.
`o Scaled up and transferred of InSb magneto resistor process to a higher throughput system (single
`wafer D-180 to five wafer E-300). Increased wafer yield by from 65% to >95%.
`o Developed industry’s first comprehensive cost and throughput model for epitaxial growth processes.
`The model typically allowed cost reductions of 10-20% and throughput increases of >10%.
`
`
`1990 AT&T Bell Labs
`Visiting Researcher
` Designed and built custom MOCVD/Mass spec system. System allowed tracking of precursor molecules,
`reaction intermediates and products over 12+ orders of magnitude of concentration.
`Implemented program to evaluate novel precursors for use in growth and doping of III-V and II-VI
`compound semiconductors. Data used to determine reaction and decomposition mechanisms for metal-
`organic sources. Successfully identified grow conditions for novel carbon doping source (norbornadiene)
`for III-V materials.
`
` Holmdel, NJ
`
`
`
`
`1989 Shell Oil Norco, LA
`Process Engineer
` Developed and implemented new system for determining optimal time to clean heat exchangers on crude
`oil distillation column based on global economic metrics of unit and detailed process simulations.
` System exceeded system cost savings target of $50,000/year by ~3 orders of magnitude. Project resulted
`in corporate-wide savings of >$50 million/year. Cumulative corporate savings exceed $1 billion.
`
`Education
`University of Florida 1997
`Ph.D. in Chemical Engineering
`BSE in Chemical Engineering
` Tulane University 1989
` Graduate work focused on development of optoelectronic devices, including novel silicon based visible LEDs
`and sulfide based TFELD structures.
` Developed the world’s first crystalline silicon based visible light LED. Utilized DOE methods to identify
`process conditions to allow first growth of epitaxial silicon on ZnS epi layers.
` Tested and verified efficacy of novel precursors for p-type doping of ZnSe materials in LED structures.
` Responsible for modification, operation and maintenance of MOCVD system for growth of wide bandgap
`compound semiconductor materials.
` Trained incoming post docs and graduate students in theory, operation and maintenance of MOCVD
`systems. Group comprised ~20 students and 6 post docs.
`Available on request
`
`References
`
`Curricula Vitae
`University of Florida, Department of Chemical Engineering Advisory Board
`Member 1998 –
`Chair 2007 – 2009
`
`Professional Societies:
`• SPIE
`• OSA
`• Materials Research Society
`
`5
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`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1014
`
`

`

`•
`
`Illuminating Engineering Society (Science Advisory Panel, Test Procedures Committee, Chair of
`Solid State Lighting Sub-Committee, Light Sources Committee, Color Committee)
`• American Society of Horticultural Science (ASHS)
`• American Society of Agricultural and Biological Engineers (ASABE)
`
`Conference Chair
`LED Measurement and Standards, San Diego, CA October 2-3 (2008).
`
`Patents (Granted)
`1 US Patent 7,093,956 “Method of Lighting for Protecting Sea Turtles.” D. Miller, E. Bretschneider,
`issued August 22, 2006.
`
` 2
`
` US Patent D650,519 “Pole for a Street Light Luminaire.” F. Maxik, D, Henderson, E.
`Bretschneider, A. Widjaja, K. Bowen, J. Sundin, E. Peiniger, issued December 13, 2011.
`
` 3
`
` US Patent 8,157,413 "Light Fixture and Associated LED Board and Monolithic Optic." F. Maxik, Z.
`Gibler, E. Bretschneider, D. Henderson, A. Widjaja, issued April 17, 2012.
`
` 4
`
` US Patent D673,323 "Light Fixture." F. Maxik, D. Henderson, E. Bretschneider, A. Widjaja, K.
`Bowen, J. Sundin, E. Peiniger, issued December 25, 2012.
`
` 5
`
` US Patent 8,360,607 "Lighting Unit with Heat Dissipating Chimney." E. Bretschneider, Z.
`Berkowitz, R. Sosnick, L. Pattison, P. Pattison, issued January 29, 2013.
`
` 6
`
` US Patent 8,408,725 "Remote Wavelength Conversion Device and Associated Methods." F.
`Maxik, E. Bretschneider, R. Soler, D. Bartine, issued April 2, 2013.
`
` 7
`
` US Patent D681,874 "Light Fixture." F. Maxik, D. Henderson, E. Bretschneider, A. Widjaja, K.
`Bowen, J. Sundin, E. Peiniger, issued May 7, 2013.
`
` 8
`
` US Patent 8,439,515 "Remote Lighting Device and Associated Methods." F. Maxik, R. Soler, D.
`Bartine, E. Bretschneider, issued May 14, 2013.
`
` 9
`
` US Patent 8,465,167 "Color Conversion Occlusion and Associated Methods." F. Maxik, E.
`Bretschneider, R. Soler, D. Bartine, issued June 18, 2013.
`
`10 US Patent 8,491,165 "Lighting Unit Having Lighting Strips with Light Emitting Elements and a
`Remote Luminescent Material." E. Bretschneider, Z. Berkowitz, R. Sosnick, L. Pattison, P. Pattison,
`issued July 23, 2013.
`
`11 US Patent 8,492,995 "Wavelength Sensing Lighting System and Associated Methods." F. Maxik,
`E. Bretschneider, P. Medelius, D. Bartine, R. Soler, G. Flickinger, issued July 23, 2013.
`
`12 US Patent 8,506,118 "Light Fixture and Associated LED Board and Monolithic Optic." F. Maxik, Z.
`Gibler, E. Bretschneider, D. Henderson, A. Widjaja, issued August 13, 2013.
`
`13 US Patent 8,515,289 "Wavelength Sensing Lighting System and Associated Methods for National
`Security Application." F. Maxik, D. Bartine, P. Medelius, E. Bretschneider, issued August 20, 2013.
`
`14 US Patent 8,547,391 "High Efficacy Lighting Signal Converter and Associated Methods." F. Maxik,
`R. Soler, D. Bartine, R. Zhou, V. Bastien, M. Regan, E. Grove, E. Bretschneider, issued October 1,
`2013.
`
`15 US Patent 8,616,715 "Remote Light Wavelength Conversion Device and Associated Methods." F.
`Maxik, E. Bretschneider, P. Medelius, D. Bartine, R. Soler, G. Flickinger, issued December 31, 2013.
`
`6
`
`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1014
`
`

`

`
`16 US Patent 8,680,457 "Motion Detection System and Associated Methods Having at Least One
`LED of a Second Set of LEDs to Vary Its Voltage." F. Maxik, issued March 25, 2014.
`
`17 US Patent 8,686,641 "Tunable LED Lamp for Producing Biologically Adjusted Light." F. Maxik, D.
`Bartine, R. Soler, E. Grove, E. Bretschneider, issued April 1, 2014.
`
`18 US Patent 8,684,566 "Light Emitting Unit With Indirect Light Source." E. Bretschneider, Z.
`Berkowitz, R. Sosnick, L. Pattison, M. Pattison, issued April 1, 2014.
`
`19 US Patent 8,702,259 "Color Conversion Occlusion and Associated Methods." F. Maxik, E.
`Bretschneider, R. Soler, D. Bartine, issued April 22,2014.
`
`20 US Patent 8,818,202 "Wavelength Sensing Lighting System and Associated Methods for National
`Security Applications.: F. Maxik, D. Bartine, P. Medelius, E. Bretschneider, issued August 26, 2014.
`
`21 US D715467 "LED Linear Replacement Lamp Design." E. Bretschneider, Z Berkowitz, R.
`Sosnick, issued October 14, 2014.
`
`22 US 8,866,839 "High Efficacy Lighting Signal Converter and Associated Methods." F. Maxik, R.
`Soler, D. Bartine, M. Regan, E. Grove, E. Bretschneider, issued October 21, 2014.
`
`23 US 8,941,329 "Tunable LED Lamp for Producing Biologically-Adjusted Light." F. Maxik, D.
`Bartine, R. Soler, E. Grove, E. Bretschneider, issued January 27, 2015.
`
`24 US 9,024,536 "Tunable LED Lamp for Producing Biologically-Adjusted Light and Associated
`Methods." F. Maxik, D. Bartine, R. Soler, E. Grove, E. Bretschneider, issued May 5, 2015.
`
`25 US 9,172,199 "Electrical Fixture Connection." T. Birdwell, E. Bretschneider, J. Fitzgibbon, B.
`Moore, S. Tylicki, issued October 27, 2015.
`
`26 US 9,172,199 "Electrical Fixture Connection." T. Birdwell, E. Bretschneider, J. Fitzgibbon, B.
`Moore, S. Tylicki, issued October 27, 2015.
`
`
`27 US 9,289,574 "Three-channel Tuned LED Lamp for Producing Biologically-Adjusted Light." F.
`Maxik, D. Bartine, R. Soler, E. Grove, E. Bretschneider, issued March 22, 2016.
`
`
`28 US 9,307,608 "Wavelength Sensing Lighting System and Associated Methods." F. Maxik, E.
`Bretschneider, P. Medelius, D. Bartine, R. Soler, G. Flickinger, issued April 5, 2016.
`
`
`29 US 9,578,710 "Wavelength Sensing Lighting System and Associated Methods." F. Maxik, E.
`Bretschneider, P. Medelius, D. Bartine, R. Soler, G. Flickinger, issued February 21, 2017.
`
`
`30 US 9,693,414 "LED Lamp for Producing Biologically-Adjusted Light." F. Maxik, D. Bartine, E.
`Bretschneider, issued June 27, 2017.
`
`
`Patents (Pending)
`>30 US and International Patents pending
`
`Publications
`1.
`“Evaluation of Zn{N[Si(CH3)3]2}2 as a p-Type Dopant in OMVPE Growth of ZnSe” W. S. Rees, D.
`M. Green, T. J. Anderson, E. Bretschneider, B. Pathangey, C. Park and J. Kim, J. Elec. Mat., vol.
`21, pp. 361-366 (1992).
`
`
`
`7
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`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1014
`
`

`

`“OMVPE Growth of ZnSe Utilizing Zinc Amides as Source Compounds: Relevance to the
`Production of p-type Material” W. S. Rees, D. M. Green, T. J. Anderson and E. Bretschneider,
`Wide Bandgap Semiconductors, eds. T. D. Moustakas, J. I. Pankove and Y. Hamakawa, MRS
`Pub., vol. 242 (1992).
`
`“Characterization of ZnS Layers Grown by MOCVD for Thin Film Electroluminescence (TFEL)
`Devices” J. E. Yu, K. S. Jones, B. Pathangey, E. Bretschneider , T. J. Anderson, J. Fang, P. H.
`Holloway, Wide Bandgap Semiconductors, eds. T. D. Moustakas, J. I. Pankove and Y.
`Hamakawa, MRS Pub., vol. 243 (1992).
`
`“A Study of Nucleation of ZnS Thin Layers Grown by Low-Pressure MOCVD for Thin Film
`Electroluminescence (TFEL) Devices” J. E. Yu, E. Bretschneider, B. Pathangey, T. J. Anderson, J.
`Fang, P. H. Holloway and K. S. Jones, Mechanisms of Heteroepitaxial Growth, eds. M. F.
`Chisholm, B. J. Garrison, R. Hull and L. J. Schowalter, MRS Pub., vol. 263 (1992).
`
`“MOCVD Growth of Non-Epitaxial and Epitaxial ZnS Thin Films” J. Fang, P. H. Holloway, J. E. Yu,
`K. S. Jones, B. Pathangey, E. Bretschneider and T. J. Anderson, Appl. Surf. Sci., vols. 70-71, pp.
`701-706 (1993).
`
`“Temperature and Flow Modulation Doping of Manganese in ZnS Electroluminescent Films by
`Low Pressure Metalorganic Chemical Vapor Deposition” J. E. Yu, K. S. Jones, P. H. Holloway, B.
`Pathangey, E. Bretschneider and T. J. Anderson, J. Elec. Mat., vol. 23, pp. 299-305 (1994).
`
`“Evidence for Quantum Confinement Effects in MOCVD-Grown Si/ZnS Nanostructures,” E.
`Bretschneider, A. Davydov, J. E. Yu, B. Pathangey, K. S. Jones and T. J. Anderson, submitted to
`Applied Physics Letter (1994).
`
`“Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD,” H. P.
`Maruska, R. Sudharsanan, E. Bretschneider, A. Davydov, J. E. Yu, Z. Huang, B. Pathangey, K. S.
`Jones and T. J. Anderson, Microcrystalline and Nanocrystalline Semiconductors, eds. R. W.
`Collins, C. C. Tsai, M. Hirose, F. Koch and L. Brus, MRS Pub., vol. 358 (1994).
`
`2.
`
`
`3.
`
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`4.
`
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`5.
`
`
`6.
`
`
`7.
`
`
`8.
`
`
`9.
`
`“Cost of Ownership Issues in Hydrogen Gas Purification,” E. Bretschneider, Semiconductor
`Fabtech, 16th ed., pp. 127-30 (2002).
`
`10. “Bi-Chromatic to Polychromatic Photo- Conversion LEDs.” W. Kennedy, E. Bretschneider,
`Proceedings of the SPIE, the International Society for Optical Engineering, vol. 5941,SPIE,
`Bellingham, WA (2005).
`
`11. “Solid-State Lighting: Where Are We Going, What Are We Doing?” B. Kennedy, E. Bretschneider,
`Photonics Spectra, vol. 40, pp58-66. (2006).
`
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`12. “Efficacy Limits for Solid-State White Light Sources.” E. Bretschneider, Photonics Spectra, vol. 47 (2007).
`
`Presentations and Seminars
`1.
`“Alternative Group V Precursors for CVD Applications,” R. M. Lum*, J. K. Klingert, D. W. Kisker
`and E. Bretschneider. Presented at the Fifth International Conference on Metalorganic Vapor
`Phase Epitaxy and Workshop on MOMBE, CBE, GSMBE and Related Techniques, Aachen,
`Germany (1990).
`
`
`2.
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`“Synthesis and Characterization of New Compounds Useful in MOVPE of II-VI Compound
`Semiconductors,” W. S. Rees*, Jr., D. Green, T. J. Anderson, E. Bretschneider and J. Kim.
`Presented at the Fifth Biennial Workshop on Organometallic Vapor Phase Epitaxy, Panama City,
`FL (1991).
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`8
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`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1014
`
`

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`3.
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`4.
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`5.
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`6.
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`7.
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`8.
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`9.
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`“Initial Stages Deposition of OMCVD ZnS on BaTa2O5 and Si,” E. Bretschneider*, J. E. Yu, B.
`Pathangey, T. J. Anderson and K. Jones. Presented at Annual AIChE Meeting, Los Angeles, CA
`(1991).
`
`“Growth and Properties of ZnS Layers for Thin Film Electroluminescence (TFEL) Devices,” E.
`Bretschneider*, J. E. Yu, J. Fang, B. Pathangey, K. S. Jones, P. H. Holloway and T. J. Anderson.
`Presented at 21st Ann. Symp. Appl. Vac. Sci. Technol., Clearwater, FL (1992).
`
`“MOCVD Growth of Non Epitaxial and Epitaxial ZnS Thin Films,” J. Fang, P. H. Holloway*, J. E.
`Yu, K. S. Jones, B. Pathangey, E. Bretschneider and T. J. Anderson. Presented at 12th Internatl.
`Vac. Congress, Netherlands (1992).
`
`“Microstructure of ZnS Layers Grown by MOCVD for Thin Film Electroluminescent Displays,” J. E.
`Yu, K. S. Jones*, E. Bretschneider, T. J. Anderson and P. H. Holloway. Presented at the 10th
`Annual Meeting of the Florida Chapter of Scanning Electron Microscopy Society, Crystal River, FL
`(1992).
`
`
`Yu,
`“Research in Electroluminescent Thin Film Materials at the University of Florida,” J. E.
`K. S. Jones, B. Pathangey, T. J. Anderson, E. Bretschneider and P. H. Holloway*. Presented at
`Planar Systems Inc, Beaverton, OR (1992).
`
`“Microstructure and Properties of MOCVD Grown ZnS Undoped and Doped with Terbium or
`Manganese,” P. H. Holloway*, J. Fang, J. E. Yu, K. S. Jones, E. Bretschneider, B. Pathangey and
`T. J. Anderson. Presented at Spring MRS Meeting, San Francisco, CA (1993).
`
`“Effects of Substrate Preparation on the Interfacial Abruptness and Composition of ZnS/Si
`Heterostructures,” J. E. Yu, E. Bretschneider, T. J. Anderson* and K. S. Jones. Presented at
`Spring MRS Meeting, San Francisco, CA (1993).
`
`
`10. “Microstructure, Modulation Doping, and Epitaxial Growth of Electroluminescent Films of ZnS,” J.
`E. Yu, J. Fang, K. S. Jones, P. H. Holloway*, E. Bretschneider, B. Pathangey and T. J. Anderson.
`Presented at the 40th Nat. Symp. and Topical Conf. of the Amer. Vac. Soc., Orlando, FL (1993).
`
`
`11. “Blue and Green Light Emitting Phosphors for Thin Film Electroluminescent Displays,” J. E. Yu, E.
`Bretschneider, B. Pathangey, S. Jones, T. Trottier, P. Rack, J. Sebastian, K. S. Jones, T. J.
`Anderson and P. H. Holloway*. Presented at Spring MRS Meeting, San Francisco, CA (1994).
`
`
`12. “Quantum Confinement Effects in Heteroepitaxial Si/ZnS Nanostructures Produced by MOCVD.”
`E. Bretschneider*, J. E. Yu, Z. Huang, B. Pathangey, K. S. Jones, T. J. Anderson, H. P. Maruska
`and R. Sudharsanan. Presented at the 41st National Symposium of the American Vacuum Society
`and 3rd International Conference on Nanometer-scale Science and Technology, Denver, CO
`(1994).
`
`
`13. “MOCVD Growth of ZnS/Si Quantum Well Structures” E. Bretschneider*, A. Davydov, C.
`McCreary, J. E. Yu, L. Wang, K. S. Jones, T. J. Anderson and P. Maruska. Presented at the TMS
`7th Biennial Workshop on Organometallic Vapor Phase Epitaxy, Fort Myers, FL (1995).
`
`
`14. “MOCVD Growth of ZnS Using Methyl Mercaptan as an Alternate Sulfur Source.” C. McCreary*,
`A. Davydov, E. Bretschneider and T. J. Anderson. Presented at the AIChE Conference on
`Electronic and Photonic Materials. Miami, FL (1995).
`
`
`15. “ZnS/Si/ZnS Quantum Well Structures for Visible Light Emission.” E. Bretschneider*, C.
`McCreary, A. Davydov, T. J. Anderson, H. P. Maruska and P. Norris. Presented at the Fall MRS
`Meeting, Boston, MA (1995).
`
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`9
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`EVERLIGHT ELECTRONICS CO., LTD. ET AL.
`Exhibit 1014
`
`

`

`16. “MOCVD Growth of Si/ZnS Quantum Well Structures.” E. Bretschneider*, A. Davydov, C.
`McCreary, T. J. Anderson and H. P. Maruska. Presented at the TMS 8th Biennial Workshop on
`Organometallic Vapor Phase Epitaxy, Dana Point, CA (1997).
`
`
`17. “Cost of Ownership Issues in Hydrogen Purification.” E. Bretschneider*, Presented at CS-