Yuji Zhao, ASU
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`Yuji Zhao
`Assistant Professor (U.S. Permanent Resident)
`School of Electrical, Computer & Energy Engineering, Ira A. Fulton School of Engineering
`Arizona State University
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`Office: 551 E. Tyler Mall, ENGRC 531, Tempe, AZ 85281
`Phone: (480) 727-4450 Ÿ Email: yuji.zhao@asu.edu Ÿ Web: faculty.engineering.asu.edu/zhao
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`RESEARCH SUMMARY
`Research Interests
`GaN-based materials and devices including LEDs, lasers, solar cells, and power transistors.
`• At UCSB, Dr. Yuji Zhao was on the R&D team with Nobel Laurate Shuji Nakamura that developed world’s best
`performance high efficiency semipolar LEDs and green laser diode. These devices are 10 times smaller, yet 10 times
`brighter, at up to 5 times of the current densities, than the conventional LEDs.
`• At ASU, Dr. Yuji Zhao is leading a research team of over 10 students and postdocs focus on GaN LEDs, solar cells,
`and power transistors, with funding support from DOE, DoD, NASA, and SFAz, etc.
`
`Selective Media Highlights of Dr. Yuji Zhao: over 100 media reports with over 6 languages
`• Arizona PBS will feature a scientific TV documentary on Yuji Zhao and GaN Space Technology in 2018
`ASU engineer showcases NASA research to congress on capitol hill, ASU news, Jan 2018
`•
`for space exploration, Astrowatch, Phys.org,
`• Gallium nitride processor: next-generation
`technology
`Spaceflightinsider, ECNMag, Technewsngadgets, ASU news, etc., English and Chinese, Dec 2017
`Vertical gallium nitride Schottky diodes with single and double drift layers, Semiconductor Today, Oct 2017
`Aluminum nitride Schottky barrier diodes with breakdown more than 1kV, Silicon Valley Microelectronics, August
`2017
`Indium gallium nitride solar cells on non-polar and semi-polar substrates, Semiconductor Today, May 2017
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`Buffer and drift layer effects on vertical gallium nitride diodes, Semiconductor Today, Apr 2017
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`•
`•
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`•
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`Thermophotonics: LEDs feed on waste heat, Nature Photonics, Nov 2015
`•
`• Overcoming the “green gap”, Nature Photonics, Jul 2013
`Semipolar planes delivers stable green LEDs, Compound Semiconductor, Aug 2013
`•
`• How LED got their shine back, Science, May 2012
`Conquering LED efficiency droop, Optical Society of America (OSA), April 2012
`•
`New LED design drops the droop, Photonics, May 2012
`•
`LEDs más eficientes para el hogar, Sustentator, Spanish, May 2012
`•
`Special substrates help LEDs shine brighter without losing efficiency, Daily Tech, May 2012
`•
`Reducing LED droop at high current, Semiconductor Today, Jul 2011
`•
`Blue semipolar LEDs now comparable to conventional c-plane devices, Laser Focus World, Nov 2010
`•
`• UCSB achieves semi-polar light extraction comparable to conventional LEDs, Semiconductor Today, Sep 2010
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`EDUCATION
`Ph.D. in Electrical and Computer Engineering
`University of California, Santa Barbara
`Advisor: Prof. Shuji Nakamura (Nobel Prize in Physics 2014)
`
`Fudan University
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`B.S. in Microelectronics
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`2008–2012
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`2004–2008
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`APPOINTMENTS
`Arizona State University
`Electrical, Computer and Energy Engineering
`• Assistant Professor
`08/2014–Present
`Established ASU GaN MOCVD facilities through startup funding, extramural funding, and equipment donations
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`Cree Ex. 1014
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`Yuji Zhao, ASU
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`University of California, Santa Barbara
`• Assistant Project Scientist
`• Graduate Student Researcher
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`Materials Department and SSLEC
`Electrical and Computer Engineering
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`01/2013–08/2014
`09/2008–12/2012
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`SELECTIVE AWARDS AND HONORS
`2017 Selected as Honorable NASA Faculty Scientist to Showcase Space Technology to Congress at Capitol Hill
`presented to U.S. Representative Lamar Smith, chairman of the Committee on Science, Space, and Technology
`2017 ASU Fulton Outstanding Assistant Professor Award
`2016 DoD DTRA Young Investigator Program (YIP) Award
`2015 NASA Early Career Faculty (ECF) Award
`2015
`Bisgrove Scholar Tenure Track Faculty Award
`2013 UCSB SSLEC Outstanding Postdoctoral Research Achievement Award
`2012 Applied Physics Letters Editor’s Picks of the Year Award
`2012 Applied Physics Express Most Cited Article of the Year Award
`Semi-Finalist, CLEO Theodore Maiman Student Paper Competition (ranked 1st in Energy and Environment session)
`2012
`2012 UCSB SSLEC Outstanding Graduate Student Research Achievement Award
`2011 UCSB SSLEC Outstanding Graduate Student Research Achievement Award
`2010 UCSB SSLEC Outstanding Graduate Student Research Achievement Award
`2004
`Fudan University Scholarship for Excellency in Undergraduate Study
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`SEMINARS AND INVITED TALKS
`1. 2018 ECS and SMEQ Joint International Meeting (AiMES 2018), Cancun, Mexico, Sep 2018
`2. 2018 Government Microcircuit Applications and Critical Technology Conference (GOMACTech 2018), Miami,
`FL, Mar 2018
`3. 2018 Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2018), San Diego, CA, Feb
`2018
`4. Stanford University, Department of Electrical Engineering, Palo Alto, CA, Nov 2017
`5. University of California, Los Angeles, Department of Electrical and Computer Engineering, Los Angeles, CA, Nov
`2017
`6. NASA Glenn Research Center, Cleveland, OH, Nov 2017
`7. Arizona State University, ASU Nanoscience Seminar, Tempe, AZ, Oct 2017
`8. University of Southern California, Distinguished Lectures, Department of Chemical Engineering and Materials
`Science, Los Angeles, CA, Oct 2017
`9. University of California, San Diego, Department of Electrical and Computer Engineering, La Jolla, CA, Oct 2017
`10. The 60th IEEE International Midwest Symposium on Circuits and Systems, Boston, MA, Aug 2017
`11. 2017 IEEE Photonics Society Summer Topicals Meeting, San Juan, Puerto Rico, Jul 2017
`12. 2017 International Symposium on Advanced Lighting Science and Technology (ALST 2017), Shaoxing, China,
`May 2017
`13. The 24th Space Photovoltaic Research and Technology (SPRAT) Conference, Cleveland, OH, Sep 2016
`14. Fudan University, School of Information Science and Technology, Shanghai, China, Jul 2015
`15. Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, China, Jul 2015
`16. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, MA,
`May 2015
`17. Soitec Phoenix Lab Inc, Tempe, AZ, Oct 2014
`18. Arizona State University, School of Electrical, Computer and Energy Engineering, Tempe, AZ, May 2014
`19. University of California, San Diego, Department of Electrical and Computer Engineering, La Jolla, CA, Apr 2014
`20. University of California, San Diego, Department of Electrical and Computer Engineering, La Jolla, CA, Aug 2013
`21. University of California, Santa Barbara, Nitride Special Seminar, Santa Barbara, CA, Nov 2013
`22. University of Notre Dame, Department of Electrical Engineering, Notre Dame, IN, Jul 2013
`23. University of Virginia, Charles L. Brown Department of Electrical and Computer Engineering, Charlottesville, VA, Apr
`2013
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`24. Society of Information Display (SID) 50th Anniversary Conference, Los Angeles, CA, Sep 2012
`25. Fudan University, School of information science and Engineering, Shanghai, China, Jun 2012
`26. University of California, Santa Barbara, Nitride Special Seminar, Santa Barbara, CA, Feb 2012
`27. Tsinghua University, Tsinghua National Laboratory for Information Science and Technology, Beijing, China, May
`2011
`28. Peking University, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Beijing, China, May
`2011
`29. Zhejiang University, Center for Optical and Electromagnetic Research, Hangzhou, China, May 2011
`30. University of California, Santa Barbara, Nitride Special Seminar, Santa Barbara, CA, Feb 2011
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`PUBLICATIONS
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`Journal papers (published and accepted)
`1. H. Fu, K. Fu, X. Huang, H. Chen, I. Baranowski, T. H. Yang, J. Montes, and Y. Zhao, “High performance vertical GaN-
`on-GaN p-n power diodes with hydrogen-plasma based edge termination”, accepted to IEEE Electron Device Lett.
`2. H. Fu, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, “Effect of crystalline anisotropy on
`vertical (-201) and (010) β-Ga2O3 Schottky barrier diodes on EFG single-crystal substrates”, accepted to IEEE T
`Electron Dev.
`3. H. Chen. H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Characterizations of the
`nonlinear optical properties for (010) and (-201) beta-phase gallium oxide”, Opt. Express 26, 3938 (2018).
`4. Y. Zhao, H. Fu, G. T. Wang, and S. Nakamura, “Toward ultimate efficiency: progress and prospects on nonpolar and
`semipolar InGaN light emitting diodes”, Adv. Opt. Photonics 10, 246 (2018). (review paper)
`Highlight in ASU News.
`5. X. Huang, H. Fu, H. Chen, Z. Lu, I. Baranowski, J. Montes, T. H. Yang, B. P. Gunning, D. Koleske, and Y. Zhao,
`“Reliability analysis of InGaN/GaN multi-quantum-well (MQW) solar cells under thermal stress”, Appl. Phys. Lett. 111,
`233511 (2017).
`6. H. Chen, H. Fu, X. Huang, X. Zhang, T. H. Yang, J. A. Montes, I. Baranowski, and Y. Zhao, “Low loss GaN
`waveguides at the visible spectral wavelengths for integrated photonics applications”, Opt. Express 25, 31758 (2017).
`7. H. Fu, X. Huang, H. Chen, Z. Lu, I. Baranowski, and Y. Zhao, “Ultra-low turn-on voltage and on-resistance vertical
`GaN-on-GaN Schottky barrier diodes with high mobility double drift layers”, Appl. Phys. Lett. 111, 152102 (2017).
`Highlight in Compound Semiconductor, Semiconductor Today, etc.
`8. H. Y. Huang, Y. Fan, Z. Lu, T. Luo, H. Fu, H. Song, Y. Zhao, and J. B. Christen, “Variable self-powered light detection
`CMOS chip with real-time adaptive tracking digital output based on a novel on-chip sensor”, Opt. Express 25, 24138
`(2017).
`9. H. Fu, X. Huang, H. Chen, Z. Lu, and Y. Zhao., “Fabrication and characterization of ultra-wide bandgap AlN based
`Schottky diodes on sapphire by MOCVD”, IEEE J. Electron Devices Soc. 5, 518 (2017).
`Top 50 most poplular articles in October 2017 and January 2018 in JEDS.
`10. Z. Lu, P. Tian, H. Chen, I. Baranowski, H. Fu, X. Huang, J. Montes, Y. Fan, H. Wang, X. Liu, R. Liu, and Y. Zhao,
`“Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK”, Opt. Express
`25, 17971 (2017).
`11. H. Fu, X. Zhang, X. Huang, I. Baranowski, H. Chen, Z. Lu, J. Montes, and Y. Zhao, “Demonstration of AlN Schottky
`barrier diodes with blocking voltage over 1kV”, IEEE Electron Device Lett. 38, 1286 (2017).
`Highlight in Silicon Valley Microelectronics, Semiconductor Today, etc.
`Top 50 most popular articles in August and September 2017 in IEEE EDL.
`12. H. Chen, X. Huang, H. Fu, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Characterizations of nonlinear optical properties
`on GaN crystals in polar, nonpolar, and semipolar orientations,” Appl. Phys. Lett. 110, 181110 (2017).
`13. H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Effect of buffer layer design on vertical GaN-on-GaN p-n
`and Schottky power diodes”, IEEE Electron Device Lett. 38, 763 (2017).
`Highlight in Silicon Valley Microelectronics, Semiconductor Today, etc.
`Top 50 most populary articles in April, May, and June 2017 in IEEE EDL.
`14. X. Huang, H. Fu, H. Chen, X. Zhang, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Nonpolar
`and semipolar InGaN solar cells with improved carrier collection efficiency”, Appl. Phys. Lett. 110, 161105 (2017).
`Highlight in Semiconductor Today.
`15. H. Chen, H. Fu, X. Huang, Z. Lu, X. Zhang, J. Montes, and Y. Zhao, “Optical cavity effects in InGaN core-shell light-
`emitting diodes with metallic coating”, IEEE Photonics J. 9, 8200808 (2017).
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`16. H. Fu, H. Chen, X. Huang, Z. Lu, and Y. Zhao, “Theoretical analysis of modulation doping effects on intersubband
`transition properties of semipolar AlGaN/GaN quantum well”, J. Appl. Phys. 121, 014501 (2017).
`17. H. Fu, Z. Lu, Y. Zhao, “Phase-space filling effect on the modeling of low-droop performance of semipolar InGaN light-
`emitting diodes”, AIP Adv. 6, 065013 (2016).
`18. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, and Y. Zhao, “Analysis of loss mechanisms in InGaN solar cells using a
`semi-analytical model”, J. Appl. Phys. 119, 213101 (2016).
`19. H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent intersubband transition in semipolar
`AlGaN/GaN single quantum well for optoelectronic applications”, J. Appl. Phys. 119, 213101 (2016).
`20. H. Fu, Z. Lu, X. Zhao, Y. H. Zhang, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Study of low-efficiency-droop
`semipolar (20-2-1) InGaN by time-resolved photoluminescence”, J. Display Technol. 12, 736 (2016).
`21. H. Chen, H. Fu, X. Huang, Z. Lu, and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes
`modified by metallic grating,” Opt. Express 24, A856 (2016).
`22. C. C. Pan, Q. Yan, H. Fu, Y. Zhao, Y. R. Wu, C. G. Van de Walle, S. Nakamura, and S. P. DenBaars, “High optical
`power and low efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barriers”, Electron.
`Lett. 51, 1187 (2015).
`23. R. Ivanov, S. Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Impact of carrier
`localization on recombination times in semipolar (20-21) plane InGaN/GaN quantum wells”, Appl. Phys. Lett. 107,
`211109 (2015).
`24. J. Xue, Y. Zhao, S. H. Oh, J. S. Speck, S. P. DenBaars, S. Nakamura, and R. J. Ram, “Thermally Enhanced Blue Light-
`Emitting Diodes”, Appl. Phys. Lett. 107, 121109 (2015).
`Highlight in Nature Photonics, vol. 9, 782 (2015).
`25. K. Gelzinyte, S Marcinkevicius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial
`uniformity of photoluminescence spectra in semipolar (20-21) plane InGaN/GaN quantum wells”, J. Appl. Phys. 117,
`023111 (2015).
`26. D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop
`violet semipolar (30-3-1) InGaN/GaN light-emitting diodes with thick active layer design”, Appl. Phys. Lett. 105,
`171106 (2014).
`Highlight in Semiconductor Today.
`27. Y. Zhao, R. M. Farrell, Y. R. Wu, J. S. Speck, “On the optical polarization ratio and valance band separation for
`nonpolar and semipolar InGaN quantum well light-emitting devices”, Jpn. J. Appl. Phys. 53, 100206 (2014). (Invited)
`28. S. Marcinkevicius, K. Gelzinyte, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier distributation between
`different potential cites in semipolar quantum well studied by near-field photoluminecence”, Appl. Phys. Lett. 105,
`111108 (2014).
`29. F. Wu, Y. Zhao, A. E. Romanov, S. P. DenBaars, S. Nakamua, and J. S. Speck, “Stacking faults and interface
`roughening in semipolar (20-2-1) grown single InGaN quantum wells for long wavelength light emitting diodes”, Appl.
`Phys. Lett. 106, 151901 (2014).
`30. Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z. H. Zhang, Z. Ju, X. Zhang, H. Sun, X. W. Sun, Y. Zhao, S. P. DenBaars,
`S. Nakamura, and H. V. Demir, “Comparative study of field-dependent carrier dynamics and emission kinetics of
`InGaN/GaN light-emitting diodes grown on (11-22) semipolar versus (0001) polar planes”, Appl. Phys. Lett. 104,
`143506 (2014).
`31. S. Marcinkevicius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized
`photoluminescence and its dynamics in semipolar (20-2-1) InGaN/GaN quantum well”, Appl. Phys. Lett. 104, 111113
`(2014).
`32. Y. Zhao, F. Wu, T. J. Yang, Y. R. Wu, S. Nakamura, and J. S. Speck, “Atomic scale nanofacet structure in semipolar
`InGaN single quantum well”, Appl. Phys. Express 7, 025503 (2014).
`33. M. T. Hardy, F. Wu, C. Y. Huang, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Impact of p-GaN
`temperature and AlGaN barrier composition on (20-21) green laser diodes”, IEEE Photonics Technol. Lett. 26, 43 (2014).
`34. S. Marcinkevicius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of
`spatial variations of (20-2-1) InGaN quantum well emission spectra”, Appl. Phys. Lett. 102, 131116 (2013).
`35. Y. Zhao, S. H. Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Green
`semipolar (20-2-1) InGaN light-emitting diodes with small wavelength shift and narrow spectral width”, Appl. Phys.
`Express 6, 062102 (2013).
`Highlight in Nature Photonics, vol. 7, 585 (2013), Compound Semiconductor, etc.
`Selected as “Research Highlights” on front page of APEX.
`Top 20 most downloaded articles May to July 2013 in APEX.
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`36. Y. Kawaguchi, S. C. Huang, R. M. Farrell, Y. Zhao, J .S. Speck, S. P. DenBaars, and S. Nakamura, “Dependence of
`electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III-nitride light-
`emitting diodes”, Appl. Phys. Express 6, 052103 (2013).
`Selected as “Research Spotlights” in APEX.
`Top 20 most downloaded articles April and June 2013 in APEX.
`37. Y. Zhao, F. Wu, C. Y. Huang, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura,
`“Suppressing the void defects in the long wavelength semipolar InGaN quantum wells by growth rate optimization”,
`Appl. Phys. Lett. 102, 091905 (2013).
`38. S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C. C. Pan, C. C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M.
`Iza, S. Keller, U. Mishra, J. S. Speck, and S. Nakamura, “Development of gallium-nitride-based light-emitting diodes
`(LEDs) and laser diodes for energy efficient lighting and displays”, Acta Mater. 61, 945 (2013). (Invited)
`39. Y. Zhao, Q. Yan, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical
`polarization characteristics of semipolar (30-31) and (30-3-1) InGaN/GaN light-emitting diodes”, Opt. Express 21, A53
`(2013).
`40. Y. Kawaguchi, C. Y. Huang, Y. R. Wu, Y. Zhao, S. P. DenBaars, and S. Nakamura, “Semipolar single-quantum-well red
`light-emitting diodes with a low forward voltage”, Jpn. J. Appl. Phys. 52, 08JC08 (2013).
`41. C. C. Pan, T. Gilberto, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars,
`“Reduction in thermal droop using thick quantum well structure in semipolar (20-2-1) blue light-emitting diodes”, Appl.
`Phys. Express 5, 102103 (2012).
`Selected as “Research Highlights” on front page of APEX.
`Top 20 most downloaded articles September and October 2012 in APEX.
`42. Y. Kawaguchi, C. Y. Huang, Y. R. Wu, Q. Yen, C. C. Pan, Y. Zhao, S. Tanaka, K. Fujito, D. Feezell, C. G. Van de
`Walle, S. P. DenBaars, and S. Nakamura, “Influence of polarity on carrier transport in semipolar (20-2-1) and (20-21)
`multiple-quantum-well light-emitting diodes”, Appl. Phys. Lett. 100, 231110 (2012).
`Selected as “Editor’s Picks of the Year” in 2012 in APL.
`Selected as “Research Highlights” of AIP June 2012.
`Selected as “Editor’s Choice” in the AIP Virtual Journal of Nanoscience and Technology, Vol. 25(25), June 2012.
`Top 20 most downloaded articles June 2012 in APL.
`43. C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, “High-power, low-
`efficiency-droop (20-2-1) single-quantum-well blue light-emitting diodes”, Appl. Phys. Express 5, 062103 (2012).
`Top 20 most downloaded articles June and July 2012 in APEX.
`44. Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hsu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de
`Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, and D. Feezell, “Indium incorporation and emission properties of
`nonpolar and semipolar InGaN quantum wells”, Appl. Phys. Lett. 100, 201108 (2012).
`45. J. J. Richardson, I. Koslow, C. C. Pan, Y. Zhao, J. S. Ha, and S. DenBaars, “Semipolar single-crystal ZnO films
`deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes”, Appl. Phys. Express 4,
`126502 (2011).
`Top 20 most downloaded articles December 2011 in APEX.
`46. C. Y. Huang, Q. Yan, Y. Zhao, D. Feezell, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, and S. Nakamura,
`“Influence of Mg-doped barriers on semipolar multi-quantum-well light-emitting diodes”, Appl. Phys. Lett. 99, 141114
`(2011).
`47. Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck,
`S. P. DenBaars, and S. Nakamura, “High optical polarization ratio from semipolar (20-2-1) blue-green InGaN/GaN light-
`emitting diodes”, Appl. Phys. Lett. 99, 051109 (2011).
`48. Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-power blue-
`violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2”, Appl. Phys.
`Express 4, 082104 (2011).
`Highlight in Science, Optical Society of America, Semiconductor Today, etc.
`Selected as “Most Cited APEX Articles of the Year” in 2012 in APEX.
`Top 20 most downloaded articles July 2011 in APEX.
`49. S. Tanaka, Y. Zhao, I. Koslow, C. C. Pan, H. T. Chen, J. Sonoda, S. P. DenBaars, and S. Nakamura, “Droop
`improvement in high current range on PSS-LEDs”, Electron. Lett. 47, 335 (2011).
`50. S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-
`efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (20-21) GaN substrates”,
`Appl. Phys. Express 3, 122102 (2010).
`Top 20 most downloaded articles November and December 2010 in APEX.
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`51. Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, H. Ohta, S. P. DenBaars, and S. Nakamura, “30-mW-class high-
`power and high-efficiency blue semipolar (10-1-1) InGaN/GaN light-emitting diodes obtained by backside roughening
`technique”, Appl. Phys. Express 3, 102101 (2010).
`Highlight in Laser Focus World, Photonics, etc.
`Top 20 most downloaded articles September and October 2010 in APEX.
`52. Y. Zhao, J. Sonada, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. DenBaars, and S. Nakamura, “Optimization of device
`structure for bright blue semipolar (10-1-1) light emitting diodes via metalorganic chemical vapor deposition”, Jpn. J.
`Appl. Phys. 49, 070206 (2010).
`Highlight in Semiconductor Today, etc.
`Top 20 most downloaded articles July and August 2010 in JJAP.
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`Conference papers and abstracts (refereed, ASU students supervised: bold)
`1. H. Fu, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, “Anisotropic electrical properties of
`vertical β-Ga2O3 Schottky barrier diodes on single-crystal substrates”, 2018 Compound Semiconductor Week (CSW
`2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral
`Presentation.
`2. H. Fu, X. Huang, H. Chen, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, “1-kV-class AlN Schottky Barrier
`Diodes on Sapphire Substrates”, 2018 Compound Semiconductor Week (CSW 2018) and the 45th International
`Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.
`3. X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K.Fu, B. P. Gunning, D. Koleske, and Y. Zhao,
`“Thermal reliability analysis of InGaN MQW solar cells”, 2018 Compound Semiconductor Week (CSW 2018) and the
`45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.
`4. X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K.Fu, B. P. Gunning, D. Koleske, and Y. Zhao, “Band
`engineering of InGaN/GaN multiple-quantum-well (MQW) solar cells”, 2018 Compound Semiconductor Week (CSW
`2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral
`Presentation.
`5. H. Fu, R. Hao, B. Zhang, and Y. Zhao, “Normally-off p-GaN/AlGaN/GaN HEMTs by hydrogen plasma
`treatment”, 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound
`Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.
`6. J. Montes, H. Fu, T. H. Yang, H. Chen, X. Huang, I. Baranowski, K.Fu, and Y. Zhao, “Gamma-ray and proton radiation
`effects in AlN Schottky barrier diodes”, 2018 Compound Semiconductor Week (CSW 2018) and the 45th International
`Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.
`I. Baranowski, H. Chen, H. Fu, J. Montes, K.Fu, T. H. Yang, , X. Huang, and Y. Zhao, “Thermal performance of silicon
`dioxide conduction blocking layers in GaN VHEMT devices ”, 2018 Compound Semiconductor Week (CSW 2018)
`and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston,
`MA, Poster Presentation.
`8. T. H. Yang, H. Fu, X. Huang, H. Chen, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, “Temperature-dependentelectrical
`properties of beta-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates and their reverse current
`leakage mechanisms”, 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on
`Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.
`9. H. Fu, H. Chen, X. Huang, I. Baranowski, J. Montes, T. H. Yang, and Y. Zhao, “Effect of crystalline anisotropy on (-201)
`and (010) β-Ga2O3 Schottky barrier diodes fabricated on single-crystal substrates”, 2018 MRS Spring Meeting, Apr 2018,
`Phoenix, AZ, Oral Presentations.
`10. H. Chen, H. Fu, X. Huang, and Y. Zhao, “Loss mechanism study and fabrication of III-N photonic waveguide for
`integrated photonics applications at visible spectral wavelength”, 2018 MRS Spring Meeting, Apr 2018, Phoenix,
`AZ, Oral Presentations.
`11. X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, B. P. Gunning, D. Koleske, and Y. Zhao, “Thermal
`reliability analysis of InGaN solar cells”, 2018 MRS Spring Meeting, Apr 2018, Phoenix, AZ, Oral Presentations.
`12. J. Montes, H. Fu, X. Huang, H. Chen, and Y. Zhao, “Radiation effects in ultra-wide bandgap AlN Schottky barrier
`diodes”, 2018 MRS Spring Meeting, Apr 2018, Phoenix, AZ, Oral Presentations.
`13. I. Baranowski, H. Fu, H. Chen, X. Huang, T. H. Yang, J. Montes, and Y. Zhao, “Thermal TCAD simulations of silicon
`dioxide conduction blocking layers in GaN vertical high electron mobility transistors”, 2018 MRS Spring Meeting, Apr
`2018, Phoenix, AZ, Poster Presentations.
`14. H. Chen, X. Huang, H. Fu, Z. Lu, J. Montes, and Y. Zhao, “Characterizations of Kerr refractive index and nonlinear
`absorption on GaN crystals in polar, nonpolar and semipolar orientations”, The 59th Electronic Materials Conference
`(EMC 2017), Jun 2017, South Bend, IN, Oral Presentation.
`
`7.
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`Cree Ex. 1014
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`Yuji Zhao, ASU
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`7
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`15. X. Huang, H. Fu, H. Chen, Z. Lu, J. Montes, M. Iza, S. P. DenBaars, S. Nakamura, and Y. Zhao, “Outstanding high
`temperature performance of nonpolar and semipolar InGaN solar cells”, The 59th Electronic Materials Conference
`(EMC 2017), Jun 2017, South Bend, IN, Oral Presentation.
`16. H. Fu, X. Huang, H. Chen, Z. Lu, X. Zhang, and Y. Zhao, “Analysis of reversed breakdown and leakage mechanisms of
`AlN Schottky diodes operating at elevated temperature”, 2017 MRS Spring Meeting, Apr 2017, Phoenix, AZ, Oral
`Presentations.
`17. X. Huang, H. Fu, H. Chen, Z. Lu, X. Zhang, M. Iza, S. DenBaars, S. Nakamura, and Y. Zhao, “Demonstration of
`Nonpolar and semipolar InGaN/GaN multi-quantum well (MQW) solar cells”, 2017 MRS Spring Meeting, Apr 2017,
`Phoenix, AZ, Oral Presentations
`18. H. Fu, X. Huang, H. Chen, Z. Lu, and Y. Zhao, “On the reverse breakdown and leakage mechanisms of AlN Schottky
`diodes at high temperature”, 2016 International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando,
`FL, Poster Presentation (Late News).
`19. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, and Y. Zhao, “Fabrication and characterization of nonpolar and semipolar
`InGaN/GaN multi-quantum well (MQW) solar cells”, 2016 International Workshop on Nitride Semiconductors (IWN
`2016), Oct 2016, Orlando, FL, Oral Presentation (Late News).
`20. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, and Y. Zhao, “Theoretical study on efficiency limits and loss analysis for
`single-junction InGaN solar cells using a semi-analytical model”, 2016 International Workshop on Nitride
`Semiconductors (IWN 2016), Oct 2016, Orlando, FL, Oral Presentation.
`21. Z. Lu, P. Tian, H. Fu, X. Huang, H. Chen, X. Liu, R. Liu, and Y. Zhao, “The effect of reflection on visible light
`communication system using a Gallium Nitride uLED and IEEE 802.11ac”, 2016 International Workshop on Nitride
`Semiconductors (IWN 2016), Oct 2016, Orlando, FL, Poster Presentation.
`22. H. Fu, Z. Lu, X. Huang, H. Chen, and Y. Zhao, “Crystal orientation dependent intersubband transition in semipolar
`AlGaN/GaN quantum well for optoelectronic applications”, 2016 International Workshop on Nitride Semiconductors
`(IWN 2016), Oct 2016, Orlando, FL, Oral Presentation.
`23. H. Chen, H. Fu, X. Huang, Z. Lu, and Y. Zhao, “Polarization-dependent emission properties of InGaN light-emitting
`diodes modified by metallic grating”, 2016 International Workshop on Nitride Semiconductors
`(IWN
`2016), Oct 2016, Orlando, FL, Poster Presentation.
`24. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, Y. Zhao, “Analysis of loss mechanisms in single-junction InGaN solar cells
`using a semi-analytical model”, The 58th TMS Electronic Materials Conference (EMC 2016), Jun 2016, Newark, DE,
`Oral Presentation.
`25. H. Fu, Z. Lu, X. Huang, H. Chen, Y. Zhao, “Terahertz intersubband transition in semipolar AlGaN/GaN quantum wells
`for optoelectronic applications”, The 58th Electronic Materials Conference (EMC 2016), Jun 2016, Newark, DE, Oral
`Presentation.
`26. H. Chen, H. Fu, Z. Lu, X. Huang and Y. Zhao, “Optical properties of highly polarized InGaN light-emitting diodes
`coated with silver grating”, The 58th Electronic Materials Conference (EMC 2016), Jun 2016, Newark, DE, Oral
`Presentation.
`27. X. Huang, H. Fu, H. Chen, Z. Lu, D. Ding, Y. Zhao, “Device simulation and loss analysis for single-junction InGaN
`solar cells using a semi-analytical model”, The 43rd IEEE Photovoltaic Specialists Conference (PVSC 2016), Jun
`2016, Portland, OR, Poster Presentation.
`28. Z. Lu. H. Wang, S. Naqvi, Y. Zhao, H. Song, J. M. B. Christen, “A point of care electrochemical impedance
`spectroscopy device”, The 28th IEEE International System-on-Chip Conference (SOCC 2015), Sep 2015, Beijing, China,
`Oral Presentation.
`29. H. Fu, Z. Lu, and Y. Zhao, “Weak phase-space willing effect on the modeling of low-droop semipolar InGaN light
`emitting diodes”, The 11th International Conference on Nitride Semiconductors (ICNS 2015), Aug 2015, Beijing, China,
`Oral Presentation.
`30. H. Fu, Z. Lu, and Y. Zhao, “The modeling of low-droop semipolar InGaN light emitting diodes with weak phase-space
`filling effect”, 2015 Compound Semiconductor Week (CSW 2015) and the 42nd International Symposium on Compound
`Semiconductors (ISCS 2015), Jun 2015, Santa Barbara, CA, Oral Presentation.
`31. Z. Lu, H. Fu, H. Song, and Y. Zhao, “A CMOS sun tracker for an application of CPV”, 2015 Compound Semiconductor
`Week (CSW 2015) and the 42nd International Symposium on Compound Semiconductors (ISCS 2015), Jun 2015, Santa
`Barbara, CA, Poster Presentation.
`32. H. Fu, Z. Lu, and Y. Zhao, “The modeling of low-droop semipolar InGaN light emitting diodes with weak phase-space
`filling effect”, The 57th TMS Electronic Materials Conference (EMC 2015), Jun 2015, Columbus, OH, Oral Presentation.
`33. S. Marcinkevicius, K. Gelzinyte, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties
`of semipolar (20-21) plane InGaN quantum wells studied on the nanoscale”, 2015 Compound Semiconductor Week
`
`Cree Ex. 1014
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`Page 7
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`Yuji Zhao, ASU
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`8
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`(CSW 2015) and the 42nd International Symposium on Compound Semiconductors (ISCS 2015), Jun 2015, Santa
`Barbara, CA, Poster Presentation.
`34. S. Marcinkevicius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Spatial variations of optical
`properties of semipolar InGaN quantum wells”, Photonics West 2015, Feb 2015, San Francisco, CA, Oral Presentation.
`35. S. Marcinkevicius, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties of semipolar (20-2-1)
`InGaN/GaN quantum wells”, 2014 International Workshop on Nitride Semiconductors (IWN 2014), Aug 2014, Wroclaw,
`Poland, Oral Presentation.
`36. S. Marcinkevicius, Y. Zhao, K. Kelchner, S. Nakamura, S. P. DenBaa