`TK7870.15.E(:122721999E
`
`210 3728
`
`.
`
`i
`
`PACKAGING
`
`
`
`ELECTRONIC
`
`
`
`
`Materials and
`Their Properties
`
`Michael G. Peeht
`
`Rakesh. Agarwal
`Patrick McCIuskey
`Terrance Dishongh
`Sims Javadpaur
`Rahul. Mahaglan
`
`1
`.
`i ENGINEER
`
`TH
`: 7870.15
`'1
`E14799
`
`'
`
`Cree Ex. 1015
`
`Cree Ex. 1015
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`Page 1
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`
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`The Electronic Packaging Series
`Series Editor: Michael G. Pecht, University of Maryland
`
`Advanced Routing of Electronic Modules
`
`Michael Pecht and Yeun Tsun Wong
`
`Electronic Packaging Materials and Their Properties
`
`Michael Pecht, Rakesh Agarwal, Patrick McCluskey, Terrance Dishongh,
`Sirus Javadpour, and Rahul Mahajan
`
`Guidebook for Managing Silicon Chip Reliability
`
`Michael Pecht, Riko Radojcic, and Gopal Rao
`
`High Temperature Electronics
`
`Patrick McCluskey, Thomas Podlesak, and Richard Grzybowski
`
`Influence of Temperature on Microelectronics and System Reliability
`Pradeep Lall, Michael Pecht, and Edward Hakim
`
`Long-Term Non-Operating Reliability of Electronic Products
`
`Michael Pecht and Judy Pecht
`
`Cree Ex. 1015
`
`Page 2
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`Cree Ex. 1015
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`Page 2
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`ELECTRONIC
`PACKAG
`Materials and Their Properties
`
`f._,_,._,-‘_:_-nuns“..—
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`
`
`'‘-.'-.|31-936{17.9}:
`
`
`
`
`a.'_..-4.‘l‘:'.
`
`
`Michael G. Pecht
`CALCE Electronics Packaging Research Center
`University of Maryland, College Park
`
`‘Rakesh Agarwal
`Delco Electronics, Kokoma, Indiana
`
`Patrick McCluskey
`Terrance Dishongh
`' " " 'Sirus Java'd'oour'
`Rahul Mahaian
`CALCE Electronics Packaging Research Center
`University of Maryland, College Park
`
`CRC Press
`
`Boca Raton London New York Washington, DC.
`
`_
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`ti.
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`Cree Ex. 1015
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`Page 3
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`Cree Ex. 1015
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`Page 3
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`--—maa:rn-rnrrr1713:"!!!rm
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`ZEROTH-LEVEL PACKAGING MATERIALS
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`37
`
`Table 24. High density substrates and selected attributes (Blood and Casey 1991)
`
`
`
` Substrate* MCM-L MCM-C MCM-D MCM-D/C MCM-Si
`Description
`laminated
`cofired
`deposited
`deposited
`SiOZ
`high
`ceramic
`organic
`thin film on
`dielectric
`density
`thin film on
`cofired
`with Si
`PCB
`Si, ceramic
`ceramic
`substrate
`or metal
`
`Maturity
`Cost
`Number of
`metal
`
`layers
`Minimum
`metal
`
`good
`medium
`>15
`
`very good
`medium
`>50
`
`limited
`high
`5
`
`limited
`high
`>50
`
`limited
`medium
`5
`
`100g] 50
`
`250—450
`
`25—75
`
`50—75
`
`25
`
`array
`
`fair
`
`array
`
`poor
`
`pitch(ti m)
`Substrate
`I/O
`Heat
`transfer
`<3.0
`9.7
`3.0—3.5
`Dielectric
`constant
`
`peripheral
`
`good
`
`array
`
`poor
`
`<3.0
`
`peripheral
`
`good
`
`3.5
`
`* MCM — Multi Chip Module; L - Laminate; C — Ceramic; D - Deposit; SiOz —-Silicon dioxide
`
`These substrates can be easily designed as a hermetic package using a
`built—in seal ring around the periphery. MCM-Cs using high-temperature
`cofired ceramic are characterized by high line resistance due to the low
`conductivity of tungsten. MCM-C works well
`for high-I/O, medium-
`performance modules such as 50MHz to 100MHz processor clocks. MCM—Cs
`with glass-ceramic dielectric materials fabricated with LTCC technology have
`low dielectric constants, low coefficients of thermal expansion (CTEs), and
`compatibility with
`low—resistivity
`conductor materials
`at
`low firing
`temperatures. Cost effectiveness remains questionable because the conductor
`screen printing process limits the achievable interconnect density.
`MCM-D consists of a substrate deposited with thin film on silicon,-
`ceramic, or metal. MCM—D substrates are used in applications that require high
`electrical performance and high interconnection densities with a minimum
`number of substrate layers. The thin—film processing is accomplished ona rigid
`base material, usually silicon, alumina, or metal. Commonly used thin—film
`materials in MCM—D include lower-conductivity aluminum and organic
`dielectric materials because the processing is easy and reliable. Copper is used
`sometimes for its better conductivity. However, there is a reliability problem
`when uncured polyimide comes into contact with copper. The problem can be
`eliminated by adding barrier metals such as chromium or nickel. ~
`MCM—Si substrates use a silicon wafer, with a deposited thin-film of
`silicon dioxide as the dielectric, and aluminum or copper as the conductive
`materials. Small geometries, improved reliability (over organic dielectrics), the
`ability to incorporate decoupling capacitance (up to 42nF/cm sq)
`in the
`substrate, and high thermal conductivity of the substrate are the major
`
`Cree Ex. 1015
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`Page 4
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`Cree Ex. 1015
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`Page 4
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`38
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`ELECTRONIC PACKAGING MATERIALS AND THEIR PROPERTIES
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`the coefficient of thermal expansion match of a
`advantages. Additionally,
`silicon substrate to silicon chips is a great advantage.
`MCM-D/C, with deposited thin film on cofired ceramic technology,
`is currently being produced only in Japan. It offers the best of ceramic and
`thin-film technologies and is an ideal choice for all types of modules. High
`cost is perhaps its only disadvantage.
`
`
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`Cree Ex. 1015
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`Page 5
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`Cree Ex. 1015
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`Page 5
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