TK7870.15 pee 1999 &
`210o
`
`i
`
`
`
`| nee
`ELECTRONIC |
`UOC(tam
`NELuelent
`AUiTata tOiauit
`
`
`
`Michael G, Pecht
`RecoCA)|
`Patrick McCluskey
`MarcumASNTTAT
`NUMACONTO
`Rent ELEY
`
`io
`ENGINEER
`
`CreeEx 1015
`
`Cree Ex. 1015
`
`Page 1
`
`

`

`
`
`The Electronic Packaging Series
`Series Editor: Michael G. Pecht, University of Maryland
`
`AdvancedRouting of Electronic Modules
`Michael Pecht and Yeun Tsun Wong
`
`Electronic Packaging Materials and Their Properties
`Michael Pecht, Rakesh Agarwal, Patrick McCluskey, Terrance Dishongh,
`Sirus Javadpour, and Rahul Mahajan
`
`Guidebook for Managing Silicon Chip Reliability
`Michael Pecht, Riko Radojcic, and Gopal Rao
`
`High Temperature Electronics
`Patrick McCluskey, Thomas Podlesak, and Richard Grzybowski
`
`Influence of Temperature on Microelectronics and System Reliability
`Pradeep Lall, Michael Pecht, and Edward Hakim
`
`Long-Term Non-Operating Reliability of Electronic Products
`Michael Pecht and Judy Pecht
`
`Cree Ex. 1015
`
`Page 2
`
`Cree Ex. 1015
`
`Page 2
`
`

`

`[=of
`—
`
` Fantpateee.
`
`
`ASPeStAS
`
`
`im
`
`t
`
`ELECTRONIC
`PACKAGING
`Materials and Their Properties
`
`Michael G. Pecht
`CALCE Electronics PackagingResearch Center
`University ofMaryland, CollegePark
`Rakesh Agarwal
`Delco Electronics, Kokoma, Indiana
`Patrick McCluskey
`Terrance Dishongh
`Sirs Javadpour
`Rahul Mahajan
`CALCE Electronics Packaging Research Center
`University of Maryland, College Patk
`
`CRC Press
`Boca Raton London New York Washington, D.C.
`
`Cree Ex. 1015
`
`Page 3
`
`Cree Ex. 1015
`
`Page 3
`
`

`

`
`
`SSESSTOeeeeee
`
`
`
`
`
`ZEROTH-LEVEL PACKAGING MATERIALS
`
`37
`
`Table 24. High density substrates and selected attributes (Blood and Casey 1991)
`
` Substrate” MCM-L MCM-C MCM-D MCM-D/C MCM-Si
`
`
`Description
`laminated
`cofired
`deposited
`deposited
`SiOz
`high
`ceramic
`organic
`thin filmon
`dielectric
`density
`thin filmon
`_cofired
`with Si
`PCB
`Si, ceramic
`ceramic
`substrate
`or metal
`limited
`high
`5
`
`Maturity
`Cost
`Number of
`metal
`
`good
`medium
`>15
`
`very good
`medium
`>50
`
`limited
`high
`>50
`
`limited
`medium
`5
`
`100-150
`
`250-450
`
`25-75
`
`50-75
`
`25
`
`layers
`Minimum
`metal
`pitch(u m)
`Substrate
`VO
`Heat
`transfer
`<3.0
`9.7
`3.0-3.5
`Dielectric
`constant
`* MICM - Multi Chip Module; L - Laminate; C - Ceramic; D - Deposit; SiO2 =Silicon dioxide
`
`array
`
`fair
`
`array
`
`poor
`
`peripheral
`
`good
`
`array
`
`poor
`
`<3.0
`
`peripheral
`
`good
`
`3.5
`
`These substrates can be easily designed as a hermetic package using a
`built-in seal ring around the periphery. MCM-Cs using high-temperature
`cofired ceramic are characterized by high line resistance due to the low
`conductivity of tungsten. MCM-C works well
`for high-I/O, medium-
`performance modules such as 50MHzto 100MHzprocessor clocks. MCM-Cs
`with glass-ceramic dielectric materials fabricated with LTCC technology have
`low dielectric constants, low coefficients of thermal expansion (CTEs), and
`compatibility with
`low-resistivity
`conductor materials
`at
`low firing
`temperatures. Cost effectiveness remains questionable because the conductor
`screen printing processlimits the achievable interconnect density.
`MCM-Dconsists of a substrate deposited with thin film on silicon,
`ceramic, or metal. MCM-D substrates are used in applicationsthat require high
`electrical performance and high interconnection densities with a minimum
`numberof substrate layers. The thin-film processing is accomplished on.a rigid
`base material, usually silicon, alumina, or metal. Commonly used thin-film
`materials in MCM-D include lower-conductivity aluminum and organic
`dielectric materials because the processing is easy and reliable. Copperis used
`sometimes for its better conductivity. However, there is a reliability problem
`when uncured polyimide comes into contact with copper. The problem can be
`eliminated by addingbarrier metals such as chromium ornickel. .
`MCM-Si substrates use a silicon wafer, with a deposited thin-film of
`silicon dioxide as the dielectric, and aluminum or copper as the conductive
`materials. Small geometries, improvedreliability (over organic dielectrics), the
`ability to incorporate decoupling capacitance (up to 42nF/cm sq)
`in the
`substrate, and high thermal conductivity of the substrate are the major
`
`Cree Ex. 1015
`
`Page 4
`
`Cree Ex. 1015
`
`Page 4
`
`

`

`38
`
`ELECTRONIC PACKAGING MATERIALS AND THEIR PROPERTIES
`
`the coefficient of thermal expansion match of a
`advantages. Additionally,
`silicon substrate to silicon chipsis a great advantage.
`MCM-D/C,with deposited thin film on cofired ceramic technology,
`is currently being produced only in Japan. It offers the best of ceramic and
`thin-film technologies and is an ideal choice forall types of modules. High
`cost is perhapsits only disadvantage.
`
`
`
`Cree Ex. 1015
`
`Page 5
`
`Cree Ex. 1015
`
`Page 5
`
`