PITTSBURGH , UNIV. OF
`PH\'S:ICS LIB.
`208 OLO ENGJNEERlNf> HALL
`PITT$BURGH, PA isc~o
`
`(cid:47)(cid:50)(cid:58)(cid:40)(cid:54) 1024, Page 1
`
`VIZIO Ex. 1024 Page 0001
`
`

`

`More Valuable Information from
`More Valuable Information from
`® Academic Press.
`G Academic Press.
`
`Visible on the Horizon ... lnnovations in Communications
`Visible on the Horizon...lnnovations in Communications
`
`Optical Fiber
`Optical Fiber
`Technology
`Technology
`
`111,,uwrt ,1, , Dl·vt«""> ,,rd Sy,it"'~
`M a te ria ls. D evices, and S ystem s
`
`0
`
`.. -
`
`.
`
`OPTICAL FIBER
`OPTICAL FIBER
`TECHNOLOGY
`TECHNOLOGY
`Materials, Devices,
`Materials, Devices,
`and Systems
`and Systems
`Editor-in-Chief
`Editor-in-Chief
`Emmanuel Desurvire
`Emmanuel Desurvire
`Alcatel-A/5/hom Reche,che, M.1Kouss,s, France
`Alcatel-Alsthom Recherche, Marcoussis, France
`Associate Editors
`Associate Editors
`E. M. Dionov
`E. M. Dianov
`Russiil/l Ac.id<Yny o( &ifflces, MO<COW
`Russian Academy o f Sciences, Moscow
`M. Nokozowo
`M. Nakazawa
`Nippoo Tel<'Bf"Jph and Telephone CompJny
`Nippon Telegraph and Telephone Company
`lbaraki-Aen, Japan
`Ibaraki-ken, Japan
`Elias Snilzer
`Elias Snitzer
`RulgCt'S Uniwxsiiy, Ptsca1away, New Je,sey
`Rutgers University, Piscataway, New Jersey
`
`Innovations in optical fiber technol(cid:173)
`Innovations in optical fiber technol-
`ogy are revolutionizing world com(cid:173)
`ogy are revolutionizing world com-
`munications. The impact of fiber
`munications. The impact of fiber
`materials, devices, and systems on
`materials, devices, and systems on
`communications in the coming
`communications in the coming
`decades will create an abundance of
`decades w ill create an abundance of
`primary literature and the need for
`primary literature and the need for
`up-to-dale reviews. Optical Fiber
`up-to-date reviews. Optical Fiber
`Technology: Materials, Devices, and
`Technology: Materials, Devices, and
`Systems is a new culling-edge journal
`Systems is a new cutting-edge journal
`designed lo fill a niche in this rapidly
`designed to fill a niche in this rapidly
`evolving field, with emphasis on
`evolving field, w ith emphasis on
`communications systems. The journal
`communications systems. The journal
`considers both theoretical and experi(cid:173)
`considers both theoretical and experi-
`mental papers on fiber materials,
`mental papers on fiber materials,
`devices, and system performance
`devices, and system performance
`evaluation and measurements with
`evaluation and measurements with
`emphasis on practical applications.
`emphasis on practical applications.
`It will provide valuable information
`It w ill provide valuable information
`for engineers and researchers in
`for engineers and researchers in
`optical fiber technology-both in
`optical fiber technology— both in
`industry and academia.
`industry and academia.
`
`Manuscri(l4S should be submitted in
`Manuscripts should be submitted in
`quad11Jplicate 10:
`quadruplicate to;
`Optical Fiber Technology
`Optical Fiber Technology
`Editorial Office
`Editorial Office
`525 B Street, Suite 1900
`525 B Street, Suite 1900
`San Diego, CA 92101-4495
`San Diego, CA 92101-4495
`U.S.A.
`U.S.A.
`Volume l (1994/1995), 4 issues
`Volume 1 (1994/1995), 4 issues
`ISSN 1068-5200
`ISSN 1068-5200
`
`In the U.S.A.
`In the U.S.A.
`and Canada
`and Canada
`Institutional Rate: $184.00
`institutional Rate:
`$184.00
`92.00
`Personal Rate:
`Personal Rate:
`92.00
`
`All other
`All other
`countries
`countries
`$221.00
`$221.00
`114.50
`114.50
`
`For more information, please contact:
`For more information, please contact:
`Academic Press, Inc.
`Academic Press, Inc.
`journal Promotion Department
`Journal Promotion Departmenl
`525 B Stree~ Suite 1900
`525 B Street, Suite 1900
`San Diego, CA 92101-4495
`San Diego, CA 92101-4495
`1- 800- 894-3434
`1-800-894-3434
`All prices are in U.S. dollars and are subject to ctw,ge wllhout notice.
`All prices are in U.S. dollars and are subject to change without notice.
`Canadian CU!lomer>: Plc.-,,e add 7% Goods and Se,vice, Tax 10 yo,,r order.
`Canadian customers: Please add 7% Goods and Services Tax to your order.
`
`ORDER FROM YOUR LOCAL BOOKSELLER
`ORDER FROM YOUR LOCAL BOOKSELLER
`or directly from
`or directly from
`ACADEMIC PRESS, INC.
`ACADEMIC PRESS, INC.
`,I Ott,,,,,. of H,r,ourt 8,J<t & O,mp.z,ry
`A Division of Harcourt Brace & Company
`Onkr Fulfillmmt °"""""'1t, DM 17915
`Order Fulfillment Department, DM17915
`6277 S.. H,rbor Om~. Orbndo, FL 32887
`6277 Sea Harbor Drive, Orlando, FL 32887
`
`•
`
`CALL TOLL FREE
`CALL TOLL FREE
`1- 800- 321-5068
`1-800-321 -5068
`FAX
`FAX1 - 800- 336-7377
`1-800-336-7377
`
`Prices are subiect to change w ithout notice. © 1 9 9 4 by Acodemic Press, IfK.
`
`Rights Reserved.
`
`NS/IMW /SW -5)06034
`
`OPTICAL FIBER
`OPTICAL FIBER
`ROTATION
`ROTATION
`SENSING
`SENSING
`
`tOUCDIT
`WILLIAM K, BURNS
`WILLIAM K. BURNS
`
`QUANTUM tltaitONICS
`
`OPTICAL FIBER
`OPTICAL FIBER
`ROTATION SENSING
`ROTATION SENSING
`Edited by
`Edited by
`William K. Burns
`William K. Burns
`A Volume in the QUANTUM ELECTRONICS-
`A Volume in the QUANTUM ELECTRONICS-(cid:173)
`PRINCIPLES AND APPLICATIONS Series
`PRINCIPLES AND APPLICATIONS Series
`This is the first and only book devoted to
`This is The first and only book devoted to
`interferometric fiber optic gyros (IFOG).
`interferometric fiber optic gyros (IFOC).
`With several chapters contributed by prin(cid:173)
`With several chapters contributed by prin-
`cipal developers of this solid-state device,
`cipal developers of this solid-state device,
`the result is an authoritative work which
`the result is an authoritative work which
`will serve as the resource for researchers,
`will serve as the resource for researchers,
`s1uden1s, and users of IFOGs.
`students, and users of IFOGs.
`Oc1ober 1993, 390 pp., S79.95/1S8N: 0-12-146075•4
`October 1993, 390 pp., $79.95/ISBN: 0-12-146075-4
`
`OPTICAL COMPUTING
`OPTICAL COMPUTING
`HARDWARE
`HARDWARE
`Jurgen Johns ond Sing H. Lee
`Jurgen Johns and Sing H. Lee
`A Volume in the OPTICAL COMPUTING Series
`A Volume in the OPTICAL COMPUllNG Series
`This insightful text includes chapters on
`This insightful text includes chapters on
`devices, microoptic components and pack(cid:173)
`devices, microoptic components and pack-
`aging, interconnects, and optical memory.
`aging, interconnects, and optical memory.
`The book's contributing authors are some
`The book's contributing authors are some
`of the leading researchers in the world.
`of the leading researchers in the world.
`Oc10be1199), 3l2 pp., S69.9S/IS8N:0-12-379'l9S-l
`October 1993, 332 pp., $69.95/ISBN: 0-12-379995-3
`
`SURFACE EMITTING
`SURFACE EMITTING
`SEMICONDUCTOR
`SEMICONDUCTOR
`LASERS AND ARRAYS
`LASERS AND ARRAYS
`Edited by
`Edited by
`Gory A. Evans and Jacob M. Hommer
`Gary A. Evans and Jacob M. Hammer
`A Volume in the QUANTUM ELECTRONICS-
`A Volume in the QUANTUM ElfCTRONICS(cid:173)
`PRINCIPLES AND APPLICATIONS Series
`PRINCJPlfS AND APPLICATIONS Series
`This book reviews all the basic types of
`This book reviews all the basic types of
`SELs, including vertical cavity, etched(cid:173)
`SELs, including vertical cavity, etched-
`mirror integrated beam deflectors, and
`mirror integrated beam deflectors, and
`grating out-coupled devices. The text also
`grating out-coupled devices. The text also
`addresses edge-emitting arrays, thermal
`addresses edge-emitting arrays, thermal
`management, coherence, and external and
`management, coherence, and external and
`monolithic phase locking for all types of
`monolithic phase locking for all types of
`semiconductor lasers.
`semiconductor lasers.
`1993, 520 pp., $110.00/ISBN; 0-12-244070-6
`1993, 520 pp,. S l t0.0WIS6N: 0-12-24-!070-6
`
`(cid:47)(cid:50)(cid:58)(cid:40)(cid:54) 1024, Page 2
`
`VIZIO Ex. 1024 Page 0002
`
`

`

`APPLIED PHYSICS lEnERS
`APPLIED PHYSICS LETIERS
`
`Vol. 64, No. 13, 28 March 1994
`Vol. 64, No. 13, 28 March 1994
`
`CODEN: APPLAB
`CODEN: APPLAB
`
`ISSN: 0003-6951
`ISSN: 0003-6951
`
`OPTICS
`OPTICS
`Experimental study of a waveguide free-electron laser using the
`1601
`1601 Experimental study of a waveguide free-electron laser using the
`coherent synchrotron radiation emitted from electron b i^ h es
`coherent synchrotron radiation emitted from electron ~
`che
`/~
`
`"
`
`• •
`
`~ <
`
`; ;
`
`w
`
`Makoto Asakawa, Naoki Sakamoto,
`Makoto Asakawa, Naoki Sakamoto,
`Naoki Inoue, Tatsuya Yamamoto,
`Naoki Inoue, Tatsuya Yamamoto,
`Kunioki Mima, Sadao Nakai,
`Kunioki Mirna, Sadao Nakai,
`Jizhong Chen, Masayuki Fujita,
`Jizhong Chen, Masayuki Fujita,
`Kazuo Imasaki, Chiyoe Yamanaka,
`,. Kazuo lmasaki, Chiyoe Yamanaka,
`TjAlatsuo Agari, Takashi Asakuma,
`~ T~~~~i:i~hi~~~~r Asakuma,
`cwobuhisa Ohigashi,
`■-jyoshiaki Tsunawaki
`I
`-.1 oshiaki Tsunawaki
`.
`c:,
`.
`" · •,?;:-
`fA. Gutarra, A. Azens, B. Stjerna,
`1604 Electrochromism of sputtered fluorinated titanium oxibe“‘thJn 4 Mt is
`-0 A. Gutarra, A. Azens, 8. StJerna,
`Electrochromlsm of sputtered fluorinated titanlu oxide. thln,,yms
`1604
`-~ C. G. Granqvist
`1s.,u./
`' C. G. Granqvist
`\ ..
`wll
`,
`-..
`, -....,
`T. Shiozawa, T. Sato, K. Horinouchi
`Improved characteristics of a Cherenkov laser loaded. With a Kerr-lik^
`T. Shlozawa, T. Sato, K. Horinouchi
`Improved characteristics of a Cherenkov laser loaded. with a Kerr-Ii kif •
`•" ·'I . ~ V, ..,-. "'
`medium
`medium
`Inherent bandwidth limits in semiconductor lasers due to distributed
`Inherent bandwidth limits in semiconductor lasers due to distributed
`microwave effects
`microwave effects
`
`1607
`1607
`
`1610
`1610
`
`1613 Jitter improvement in mark edge recording for phase change optical
`1613 Jitter Improvement In mark edge recording for phase change optical
`disks with optical phase encoding
`disks with optical phase encoding
`1615 Electron paramagnetic resonance study of a native acceptor in
`1615 Electron paramagnetic resonance study of a native acceptor in
`as-grown ZnGeP2
`as-grown ZnGeP2
`
`1618 Micrometer scale visualization of thermal waves by photoreflectance
`1618 Micrometer scale visualization of thermal waves by photoreflectance
`microscopy
`microscopy
`
`ACOUSTICS
`ACOUSTICS
`1620 Acoustic phase conjugation in highly nonlinear PZT piezoelectric
`1620 Acoustic phase conjugation in highly nonlinear PZT piezoelectric
`ceramics
`ceramics
`
`FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES
`FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES
`1623 Electron acceleration resonant with sheath motion in a low-pressure
`1623 Electron acceleration resonant with sheath motion in a low-pressure
`radio frequency discharge
`radio frequency discharge
`1626 Electron collision cross sections of boron trichloride
`1626 Electron collision cross sections of boron trichloride
`1629 Fluid dynamics and dust growth in plasma enhanced chemical vapor
`1629 Fluid dynamics and dust growth in plasma enhanced chemical vapor
`deposition
`deposition
`1632 Materials characterization with the acoustic microscope
`1632 Materials characterization with the acoustic microscope
`
`CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
`CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES
`1635 Diffraction limited dry etching of GaAs at X.=130 nm
`1635 Diffraction limited dry etching of GaAs at A=130 nm
`
`1638 Nucleation of boron nitride on cubic boron nitride microcrystallites
`1638 Nucleation of boron nitride on cubic boron nitride microcrystallltes
`using chemical vapor deposition
`using chemical vapor deposition
`1641 Diffusion length of Ga adatoms on GaAs ( 111) surface in the
`1641 Diffusion length of Ga adatoms on GaAs ( i l l ) surface in the
`,J19 x ../f9 reconstruction growth regime
`reconstruction growth regime
`^ [ ^ 9 X
`(Ba-t-Sr)/Ti ratio dependence of the dielectric properties for
`(Ba+ Sr)m ratio dependence of the dielectric properties for
`(Bao.sSro.5)Ti0 3 thin films prepared by ion beam sputtering
`(Ba0.5Sr0.s)T103 thin films prepared by ion beam sputtering
`1647 Growth of SiC using hexamethyidisilane in a hydrogen-poor ambient
`1647 Growth of SIC using hexamethyldlsllane in a hydrogen-poor ambient
`
`1644
`1644
`
`Daniel A. Tauber, Ralph Spickermann,
`Daniel A. Tauber, Ralph Spickermann,
`Radhakrishnan Nagarajan,
`Radhakrishnan Nagarajan,
`Thomas Reynolds,
`Thomas Reynolds,
`Archie L. Holmes, Jr., John E. Bowers
`Archie L. Holmes, Jr., John E. Bowers
`Tatsunori Ide, Mitsuya Okada
`Tatsunori Ide, Mitsuya Okada
`
`M. H. Rakowsky, W. K. Kuhn,
`M. H. Rakowsky, W. K. Kuhn,
`W. J. Lauderdale, L. E. Halliburton,
`W. J. Lauderdale, L. E. Halliburton,
`G. J. Edwards, M. P. Scripsick,
`G. J. Edwards, M. P. Scripsick,
`P. G. Schunemann, T. M. Poliak,
`P. G. Schunemann, T. M. Pollak,
`M. C. Ohmer, F. K. Hopkins
`M. C. Ohmer, F. K. Hopkins
`L. Pettier
`L. Pottier
`
`M. Ohno, K. Takagi
`M. Ohno, K. Takagi
`
`Yoshihiro Okuno, Yasunori Ohtsu,
`Yoshihiro Okuno, Yasunori Ohtsu,
`Hiroharu Fujita
`Hiroharu Fujita
`Rajesh Nagpal, Alan Garscadden
`Aajesh Nagpal, Alan Garscadden
`Peter Haaland, Sokol Ibrani,
`Peter Haaland, Sokol lbrani,
`Hao Jiang
`Hao Jiang
`S. Hirsekorn, S. Pangraz
`S. Hirsekorn, S. Pangraz
`
`B. Li, I. Twesten, H.-P. Krause,
`B. Li, I. Twesten, H.-P. Krause,
`N. Schwenter
`N. Schwenter
`Hidetoshi Saitoh, Takeshi Hirose,
`Hidetoshl Saitoh, Takeshi Hirose,
`Tomoo Ohtsuka, Yukio Ichinose
`Tomoo Ohtsuka, Yukio Ichinose
`K. Yang, L. J. Schowalter, T. Thundat
`K. Yang, L. J. Schowalter, T. Thundat
`
`Shintaro Yamamichi, Hisato Yabuta,
`Shintaro Yamamlchi, Hisato Yabuta,
`Toshiyuki Sakuma, Yoichi Miyasaka
`Toshiyukl Sakuma, Yoichi Miyasaka
`N. Nordell, S. Nishino, J .. w. Yang,
`N. Nordeii, S. Nishino, J.-W. Yang,
`C. Jacob, P. Pirouz
`C. Jacob, P. Pirovz
`
`(Continued)
`(C o n tin u e d )
`
`(cid:47)(cid:50)(cid:58)(cid:40)(cid:54)(cid:3)(cid:20)(cid:19)(cid:21)(cid:23)(cid:15)(cid:3)(cid:51)(cid:68)(cid:74)(cid:72)(cid:3)(cid:22)
`
`VIZIO Ex. 1024 Page 0003
`
`

`

`1650 Crystal structure and magnetic properties of LaCo^s.^Si^ compounds
`1650 Crystal structure and magnetic properties of LaCo13_xSix compounds
`
`1653 Nanoindentation hardness measurements using atomic force
`1653 Nanoindentation hardness measurements using atomic force
`microscopy
`microscopy
`1656 New approach for synthesizing Ge quantum crystailites embedded in
`1656 New approach for synthesizing Ge quantum crystallites embedded in
`a-SiNx films
`a-SiNx films
`
`SEMICONDUCTORS
`SEMICONDUCTORS
`1659 New microfabrication technique by synchrotron radiation-excited
`1659
`New mlcrofabrlcatlon technique by synchrotron radiation-excited
`etching: Use of noncontact mask on a submicrometer scaie
`etching: Use of noncontact mask on a submicrometer scale
`
`1662 Hydrodynamic approach to noise spectra in unipoiar semiconductor
`1662
`Hydrodynamic approach to noise spectra In unipolar semiconductor
`structures
`structures
`Photoiuminescence of InAs/AiSb single quantum wells
`Photoluminescence of lnAs/AISb single quantum wells
`
`1665
`1665
`
`1668
`1668
`
`1670
`1670
`1673
`1673
`
`1681
`1681
`
`Simple Diophantine test for the validity of conventional deep level
`Simple Diophantine test for the validity of conventional deep level
`transient spectroscopy
`transient spectroscopy
`{H,P}"^ transitions: A new iook at donor-hydrogen pairs in Si
`{H,P}0-
`{H,P}+ transitions: A new look at donor-hydrogen pairs In SI
`Low temperature electron cyclotron resonance plasma etching of
`Low temperature electron cyclotron resonance plasma etching of
`GaAs, AIGaAs, and GaSb in Ci2/Ar
`GaAs, AIGaAs, and GaSb In CIJ Ar
`1676 Opticai anisotropy and spin polarization in ordered GainP
`1676
`Optical anisotropy and spin polarization in ordered GalnP
`1679 Kinetic pattern formation of Gd-silicide fiims in iaterai growth
`1679
`Kinetic pattern formation of Gd-sillcide films in lateral growth
`geometry
`geometry
`Cyciotron effective mass of hoies in Si^ .^Gex/Si quantum wells:
`Cyclotron effective mass of holes in Si1 - xGex/SI quantum wells:
`Strain and nonparabolicity effects
`Strain and nonparabollclty effects
`1684 Detection of hydrogen-piasma-induced defects in Si by positron
`1684
`Detection of hydrogen-plasma-Induced defects In Si by positron
`annihiiation
`annihliatlon
`1687 Candeia-class high-brightness inGaN/AiGaN double-heterostructure
`1687
`Candela-class high-brightness lnGaN/AIGaN double-heterostructure
`blue-light-emitting diodes
`blue-light-emitting diodes
`Temperature-dependent study of spin-dependent recombination at
`Temperature-dependent study of spin-dependent recombination at
`silicon dangling bonds
`sillcon dangling bonds
`1693 High efficiency chemical etchant for the formation of luminescent
`1693
`High efficiency chemical etchant for the formation of luminescent
`porous silicon
`porous sillcon
`
`1690
`1690
`
`1696 Reduced phosphorus loss from InP surface during hydrogen plasma
`1696
`Reduced phosphorus loss from lnP surface during hydrogen plasma
`treatment
`treatment
`Fabrication of three-terminal resonant tunneling devices in
`Fabrication of three-terminal resonant tunneling devices in
`silicon-based material
`slllcon-based material
`
`1699
`1699
`
`1702
`1702
`
`Si/Ge/S multilayer passivation of GaAs(IOO) for
`SI/Ge/S multilayer passivation of GaAs(100) for
`metal-insulator-semiconductor capacitors
`metal-lnsulator-sem{conductor capacitors
`
`1705
`1705
`
`Picosecond carrier escape by resonant tunneling In pseudomorphic
`Picosecond carrier escape by resonant tunneling In pseudomorphic
`InGaAs/GaAsP quantum well modulators
`lnGaAs/GaAsP quantum well modulators
`
`1708
`1708
`
`1711
`1711
`
`Strained ln0 .4 0AI0.6 0As window layers for indium phosphide solar
`Strained ln0.4oAio.eoAs window layers for indium phosphide solar
`cells
`cells
`Negative differential resistance at room temperature in <$^oped
`Negative differential resistance at room temperature in ~oped
`diodes grown by Si-molecular beam epitaxy
`diodes grown by Si-molecular beam epitaxy
`Electronic mobility gap structure and deep defects in amorphous
`Electronic mobility gap structure and deep defects In amorphous
`silicon-germanium alloys
`sillcon-germanlum alloys
`Pressure dependence of deep level transitions in AgGaSe2
`1717
`1717
`Pressure dependence of deep level transitions i n AgGaSe2
`1720 Dynamics of beam defocusing and induced absorption in CdZnTe
`1720
`Dynamics of beam defocusing and Induced absorption In CdZnTe
`alloys
`alloys
`
`1714
`1714
`
`G. H. Rao, J. K. Liang, Y. L. Zhang,
`G. H. Rao, J. K. Liang, Y. L. Zhang,
`X. R. Cheng, W. H. Tang
`X. R. Cheng, W. H. Tang
`Bharat Bhushan, Vilas N. Koinkar
`Bharat Bhushan, Vilas N. Koinkar
`
`X.-X. Qu, K.-J. Chen, X.-F. Huang,
`X.-X. Qu, K.-J. Chen, X.-F. Huang,
`Z.-F. Li, D. Feng
`Z.-F. Li, D. Feng
`
`Shingo Terakado, Takashi Goto,
`Shingo Terakado, Takashi Goto,
`Masayoshi Ogura, Kazuhiro Kaneda,
`Masayoshi Ogura, Kazuhiro Kaneda,
`Osamu Kitamura, Shigeo Suzuki,
`Osamu Kitamura, Shigeo Suzuki,
`Kenichiro Tanaka
`Kenichiro Tanaka
`V. Gruzinskis, E. Starikov,
`V. Gruiinskis, E. Starikov,
`P. Shiktorov, L. Reggiani, L. Varani
`P. Shiktorov, L. Reggiani, L. Varani
`F Fuchs, J. Schmitz, H. Obloh,
`F. Fuchs, J. Schmitz, H. Obloh,
`J. D. Ralston, P. KoidI
`J. D. Ralston, P. Koidl
`Dobri Batovski, Chavdar Hardalov
`Dobri Batovski, Chavdar Hardalov
`
`S. K. Estreicher, R. Jones
`S. K. Estreicher, R. Jones
`S. J. Pearton, F. Ren, C. R. Abernathy
`S. J. Pearton, F. Ren, C. A. Abernathy
`
`Su-Huai Wei, Alex Zunger
`Su-Huai Wei, Alex Zunger
`G. Molnar, G. Peto, Z. E. Horvath,
`G. Molnar, G. Peto, Z. E. Horvath,
`E. Zsoldos
`E. Zsoldos
`J.-P. Cheng, V. P. Kesan,
`J.-P. Cheng, V. P. Kesan,
`D. A. Grutzmacher, T. 0. Sedgwick
`D. A. Grutzmacher, T. 0. Sedgwick
`P. Asoka-Kumar, H. J. Stein,
`P. Asoka-Kumar, H. J. Stein,
`K. G. Lynn
`K. G. Lynn
`Shuji Nakamura, Takashi Mukai,
`Shuji Nakamura, Takashi Mukai,
`Masayuki Senoh
`Masayuki Senoh
`D. Vuillaume, D. Deresmes,
`D. Vuillaume, D. Deresmes,
`D. Stievenard
`D. Stievenard
`Michael T. Kelly,
`Michael T. Kelly,
`Jonathan K. M. Chun,
`Jonathan K. M. Chun,
`Andrew B. Bocarsly
`Andrew B. Bocarsly
`Sathya Balasubramanian,
`Sathya Balasubramanian,
`Vikram Kumar, N. Balasubramanian
`Vikram Kumar, N. Balasubramanian
`A. Zaslavsky, K. R. Milkove, Y. H. Lee,
`A. Zaslavsky, K. A. Milkove, Y. H. Lee,
`K. K. Chan, F. Stern,
`K. K. Chan, F. Stern,
`D. A. Grutzmacher, S. A. Rishton,
`D. A. Gnitzmacher, S. A. Rishton,
`C. Stanis, T. 0. Sedgwick
`C. Stanis, T. 0 . Sedgwick
`Z. H. Lu, D. Landheer,
`Z. H. Lu, D. Landheer,
`J.-M. Baribeau, L J. Huang,
`J.-M. Baribeau, L. J. Huang,
`W. W. Lau
`W.W. Lau
`N. M. Froberg, A. M. Johnson,
`N. M. Froberg, A. M. Johnson,
`K. W. Goossen, J. E. Cunningham,
`K. W. Goossen, J. E. Cunningham,
`M. B. Santos, W. Y, Jan, T. H. Wood,
`M. B. Santos, W. Y. Jan, T. H. Wood,
`C. A. Burrus, Jr.
`C. A. Burrus, Jr.
`R. K. Jain, G. A. Landis, D. M. Wilt,
`A. K. Jain, G. A. Landis, D. M. Wilt,
`D. J. Flood
`D. J. Flood
`M. R. Sardela, Jr., H. H. Radamson,
`M. R. Sardela, Jr., H. H. Radamson,
`G. V. Hansson
`G. V. Hansson
`Thomas Unold, J. David Cohen,
`Thomas Unold, J. David Cohen,
`Charles M. Fortmann
`Charles M. Fortmann
`In-Hwan Choi, Peter Y. Yu
`ln-Hwan Chol, Peter Y. Yu
`B. Honerlage, D. Ohimann,
`B. Honerlage, D. Ohlmann,
`M. Benhmida, R. Levy, J. B. Grun
`M. Benhmida, A. Levy, J. B. Grun
`
`(Continued)
`(C o n tin u e d )
`
`(cid:47)(cid:50)(cid:58)(cid:40)(cid:54)(cid:3)(cid:20)(cid:19)(cid:21)(cid:23)(cid:15)(cid:3)(cid:51)(cid:68)(cid:74)(cid:72)(cid:3)(cid:23)
`
`VIZIO Ex. 1024 Page 0004
`
`

`

`1723
`1723
`
`Impurity-mediated growth and characterization of thin pseudomorphic
`Impurity-mediated growth and characterization of thin pseudomorphlc
`germanium layers in silicon
`germanium layers In silicon
`
`H. J. Osten, E. Bugiei, B. Dietrich,
`H. J. Osten, E. Bugiel, B. Dietrich,
`W. Kissinger
`W. Kissinger
`
`SUPERCONDUCTORS
`SUPERCONDUCTORS
`1726 Temperature dependence of the electron energy gap of high T q
`1726 Temperature dependence of the electron energy gap of high Tc
`superconductors studied by work function spectroscopy
`superconductors studied by work function spectroscopy
`1729 Direct observation of Josephson seif-radiation in Bi2Sr2Ca2Cu3 0 ^
`1729 Direct observation o f Josephson self-radiation In Bi2 Sr2Ca2Cu3Oy
`break junctions above n K
`break junctions above 77 K
`1732 Determination of density of trap states at Y2 0 3 -stabilized Zr02/Si
`1732 Determination of density of trap states at Y20 3-stabliized ZrO:JSI
`interface of YBa2Cu3 0 7 _^/Y2 0 3 -stabilized Zr0 2 /Si capacitors
`Interlace of YBa2Cu30 7 _ 6 /Y20 3-stablllzed ZrOJ SI capacitors
`1735 Fast growth of Bi2Sr2 Ca2Cu3 0 io+x and Bi2Sr2CaCu20s+x thin crystals
`thin crystals
`1735 Fast growth of B12Sr2Ca2Cu30 10u and B12Sr2CaCu20 8 u
`at the surface of KCI fluxes
`at the surlace of KCI fluxes
`
`PAPERS IN OTHER FIELDS
`PAPERS IN OTHER FIELDS
`1738 Tapping mode atomic force microscopy in liquids
`1738 Tapping mode atomic force microscopy In liquids
`
`1741 Vanishing Freedericksz transition threshold voltage in a chiral
`1741 Vanishing Freedericksz transition threshold voltage In a chiral
`nematic liquid crystal
`nematic liquid crystal
`
`1744 CUMULATIVE AUTHOR INDEX
`1744 CUMULATIVE AUTHOR INDEX
`
`S. Westermeyr, R. Muller, J. Scholtes,
`S. Westermeyr, R. Muller, J. Scholtes,
`H. Oechsner
`H. Oechsner
`Kiejin Lee, lenari Iguchi,
`Kiejin Lee, lenari lguchi,
`Takeshi Hikata, Ken-ichi Sato
`Takeshi Hikata, Ken-ichi Sato
`Jianmin Qiao, Kuohsu Wang,
`Jianmin Qiao, Kuohsu Wang,
`Cary Y. Yang
`Cary Y. Yang
`G. Balestrino, E. Milani, A. Paoletti,
`G. Balestrino, E. Milani, A. Paoletti,
`A. Tebano, Y H. Wang, A. Ruosi,
`A. Tebano, Y. H. Wang, A. Ruosi,
`R. Vaglio, M. Valentino, P. Paroli
`R. Vaglio, M. Valentino, P. Paroli
`
`P. K. Hansma, J. P. Cleveland,
`P. K. Hansma, J . P. Cleveland,
`M. Radmacher, D. A. Walters,
`M. Radmacher, D. A. Walters,
`P. E. Hillner, M. Bezanilla, M. Fritz,
`P. E. Hillner, M. Bezanilla, M. Fritz,
`D. Vie, H. G. Hansma, C. B. Prater,
`D. Vie, H. G. Hansma, C. B. Prater,
`J. Massie, L. Fukunaga, J. Gurley,
`J. Massie, L. Fukunaga, J. Gurley,
`V. Elings
`V. Elings
`·
`Karl A. Crandall, Michael R. Fisch,
`Karl A. Crandall, Michael R. Fisch,
`Rolfe G. Petschek,
`Rolfe G. Petschek,
`Charles Rosenblatt
`Charles Rosenblatt
`
`A publication of the American Institute of Physics, 500 Sunnyside Blvd., Woodbury, NY 11797-2999
`A publlcatlon of the American Institute of Physics, 500 Sunnyside Blvd., Woodbury, NY 11797-2999
`(cid:47)(cid:50)(cid:58)(cid:40)(cid:54)(cid:3)(cid:20)(cid:19)(cid:21)(cid:23)(cid:15)(cid:3)(cid:51)(cid:68)(cid:74)(cid:72)(cid:3)(cid:24)
`
`VIZIO Ex. 1024 Page 0005
`
`

`

`Candela-class high-brightness InGaN/AIGaN double-heterostructure
`Candela-class high-brightness lnGaN/AIGaN double-heterostructure
`blue-light-emitting diodes
`blue-light-emitting diodes
`Shuji Nakamura, Takashi Mukai, and Masayuki Senoh
`Shuji Nakamura, Takashi Mukai, and Masayuki Senoh
`Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan,
`Department of Research and De1•e/op111e111, Nichiu Chemical /11d11s1ries, Ltd., 49/ Oka, Kaminaka, A11a11,
`Tokushima 774, Japan
`Tok11shima 774. Japan
`(Received 2 December 1993; accepted for publication 5 January 1994)
`(Received 2 December I 993; accepted for publication 5 January 1994)
`
`(D H ) blue-light-emitting
`InGaN/AIGaN double-heterostructure
`Candela-class high-brightness
`Candela-class high-brightness lnGaN/AlGaN double-heterostructure (DH) blue-light-emitting
`diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn-doped
`diodes (LEDs) with the luminous intensity over I cd were fabricated. As an active layer, a Zn-doped
`InGaN layer was used for the D H LEDs. The typical output power was 1500 /uW and the external
`lnGaN layer was used for the DH LEDs. The typical output power was 1500 µWand the external
`quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The
`quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The
`peak wavelength and the full width at half-maximum of the electroluminescence were 450 and 70
`peak wavelength and the full width at half-maximum of the electroluminescence were 450 and 70
`nm, respectively. This value of luminous Intensity was the highest ever reported for blue LEDs.
`nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.
`
`Recently, there has been much progress in wide-band-
`Recently, there has been much progress in wide-band(cid:173)
`gap II-VJ compound semiconductor research. in which the
`gap II-V I compound semiconductor research, in which the
`first blue-green1 and blue injection laser diodes (LDs)2 as
`first blue-green' and blue injection laser diodes (LDs)^ as
`well as high-efficiency blue-light-emitting diodes (LEDs)3
`well as high-efficiency blue-light-emitting diodes (LEDs)^
`have been demonstrated. For the application to blue light-
`have been demonstrated. For the application 10 blue light(cid:173)
`emitting devices, there are promising materials, such as
`emitting devices, there are promising materials, such as
`wide-band-gap nitride semiconductors, which have great
`wide-band-gap nitride semiconductors, which have great
`physical hardness, extremely large heterojunction offsets,
`physical hardness, extremely large heterojunction offsets,
`high thermal conductivity, and high melting temperature.4 In
`high thermal conductivity, and high melting temperature.'* In
`this area, there has recently been great progress in the crystal
`this area, there has recently been great progress in the crystal
`quality. p-type control, and growth method of GaN films.5.r,
`quality, p-type control, and growth method of GaN films.^ '’
`For practical applications to short-wavelength optical de-
`For practical applications to short-wavelength optical de(cid:173)
`vices, such as LDs, a double heterostructure is indispensable
`vices. such as LDs, a double heterostructure is indispensable
`for III-V nitrides. The ternary III-V semiconductor com-
`for 111-V nitrides. The ternary 111-V semiconductor com(cid:173)
`pound, InGaN, is one candidate as the active layer for the
`pound, lnGaN, is one candidate as the active layer for the
`blue emission because its band gap varies from 1.95 to 3.40
`blue emission because its band gap varies from 1.95 to 3.40
`eV, depending on the indium mole fraction. Up to now, not
`eY, depending on the indium mole fraction. Up to now, not
`much research has been performed on lnGaN growth.7- 9 Re(cid:173)
`much research has been performed on InGaN growth.’ ”^ Re-
`cently. relatively high-quality lnGaN films were obtained by
`cently, relatively high-quality InGaN films were obtained by
`Yoshimoto er a/.,9 at a high growth temperature (800 °C) and
`Yoshimoto et al.,^ at a high growth temperature (800 °C) and
`a high indium source flow rate ratio. The present authors
`a high indium source flow rate ratio. The present authors
`discovered that the crystal quality of InGaN films grown
`discovered that the crystal quality of lnGaN films grown
`on GaN films was greatly improved in comparison with that
`on GaN films was greatly improved in comparison with that
`on a sapphire substrate, and the band-edge (BE) emission
`on a sapphire substrate, and the band-edge (BE) emission
`of InGaN became much stronger
`in photoluminescence
`of lnGaN became much stronger in photoluminescence
`(PL) measurements.10 Thus. the first successful lnGaN/GaN
`(PL) measurements. Thus, the first successful InGaN/GaN
`D H blue LEDs were fabricated using the above-mentioned
`DH blue LEDs were fabricated using the above-mentioned
`lnGaN films. 11 On the other hand, Zn doping into GaN has
`InGaN films." On the other hand, Zn doping into GaN has
`been intensively investigated to obtain blue emission centers
`been intensively investigated to obtain blue emission centers
`for the application to blue LEDs by many researchers be-
`for the application to blue LEDs by many researchers be(cid:173)
`cause strong blue emissions have been obtained by Zn dop-
`cause strong blue emissions have been obtained by Zn dop(cid:173)
`ing into GaN. 12
`15 However, there are no reports on Zn dop(cid:173)
`ing into GaN.*^“*^ However, there are no reports on Zn dop-
`-
`ing into InGaN. In this letter, the InGaN/AIGaN D H blue
`ing into lnGaN. In this letter, the lnGaN/AIGaN DH blue
`LED which has a Zn-doped lnGaN layer as an active layer is
`LED which has a Zn-doped InGaN layer as an active layer is
`described for the first time.
`described for the first time.
`InGaN films were grown by the two-flow metalorganic
`lnGaN films were grown by the two-flow metalorganic
`chemical vapor deposition (M O C V D ) method. Details of the
`chemical vapor deposition (MOCVD) method. Details of the
`two-flow MOCVD are described in other articles. 16· 17 The
`two-flow M O C V D are described in other a r t i c l e s . T h e
`growth was conducted at atmospheric pressure. Sapphire
`growth was conducted at atmospheric pressure. Sapphire
`with (000 1) orientation (C face), two inches in diameter, was
`with (0001) orientation (C face), two inches in diameter, was
`used as a substrate. Trimethylgallium (TM G ), trimethylalu-
`used as a substrate. Trimethylgallium (TMG), trimethylalu(cid:173)
`minum (TMA), trimethylindium (TM(). monosilane (SiH4).
`minum (T M A ), trimethylindium (T M I), monosilane (SiH4),
`
`(Cp2Mg), diethylzinc
`bis-cyclopentadienyl magnesium
`(Cp2Mg), diethylzinc
`bis-cyclopentadienyl magnesium
`(DEZ), and ammonia (N H 3) were used as Ga, A l, In, Si, Mg,
`(DEZ), and ammonia (NH3) were used as Ga. AL In. Si, Mg,
`Zn. and N sources, respectively. First, the substrate was
`Zn, and N sources, respectively. First, the substrate was
`heated to 1050 •c in a stream of hydrogen. Then. the sub(cid:173)
`heated to 1050 °C in a stream of hydrogen. Then, the sub-
`strate temperature was lowered to 510 °C to grow the GaN
`strate temperature was lowered to 510 °C to grow the GaN
`buffer layer. The thickness of the GaN buffer layer was about
`buffer layer. The thickness of the GaN buffer layer was about
`300 A. Next, the substrate temperature was elevated to
`300 A. Next, the substrate temperature was elevated to
`1020 °C to grow GaN films. During the deposition, the flow
`1020 °C to grow GaN films. During the deposition. the flow
`rates of N H 3, T M G , and SiH4 (10 ppm SiH4 in H 2) in the
`rates of Nl-13 , TMG, and SiH4 ( 10 ppm SiH4 in H2) in the
`main flow were maintained at 4.0 /"/min, 30 ^umol/min, and
`main flow were maintained at 4.0 / /min, 30 µmol/min. and
`4 nmol/min, respectively. The flow rates of H 2 and N 2 in the
`4 nmol/min, respectively. The flow rates of H2 and N2 in the
`subflow were both maintained at 10 //m in . The Si-doped
`subflow were both maintained at LO / /min. The Si-doped
`GaN films were grown for 60 min. The thickness of the
`GaN films were grown for 60 min. The thickness of the
`Si-doped GaN film was approximately 4 pm. After GaN
`Si-doped GaN film was approximately 4 µm. After GaN
`growth, a Si-dop