||ll||||||||||||||||||||||||||l||||||||||||||||||||||||||||||||||||||||||||
`
`USOO7078732B1
`
`{12} United States Patent
`US 7,078,732 Bl
`Reeh et al.
`{45) Date of Patent:
`*Jul. 18, 2006
`
`(10) Patent No.:
`
`(54
`
`{75)
`
`l.[Gll'l‘-R‘-\I)IA'1'INGSEMICONDUC‘I‘OR
`(.‘OMPONEN'I‘ WITH .-\ LUMINESCENCE
`CONVERSION ELEMENT
`
`2.192.869 A ’9‘
`3.312.851 A
`3.316.109 A
`3.440.471 A
`
`34940 Pearce
`4-1967 Flowers el :11.
`4'1967 Rimbach
`4-1969 Baczewski et al.
`
`Inventors: Ulrike Reeh. Miinchen (1)15]; Klaus
`lliihn. 'l‘autkirchen (1)133): Norbert
`Stath. Regensburg (1)11): Giiuter Waitl.
`Regentsburg (Di-L): l’eter Schletter.
`t-'reiburg (DE): Jiirgen Schneider.
`Kirchmnen (1)15): Ralf Schmidt.
`Viirstetten (DH)
`
`(Continued)
`
`l-‘ORliltiN l’.-X1'l:‘1\l'l‘ |'.)(')("t_lM1f£N'1‘S
`
`BF
`DF.
`DE
`
`1 007 325
`1915290
`2018353 C
`
`IU [995
`10 I969
`191970
`
`
`
`a) 3 L I J.. . '
`
`
`
`
`
`(73) Assignee:
`
`()sram GmIJH (DIE)
`
`( * ) Notice:
`
`Subject to any disclaimer. the term ot‘lhis
`patent
`is extended or adjusted under 35
`U.S.(T. 154th) by 0 clays.
`
`This patent is subject to a terminal dis—
`claimer.
`
`(2]) Appl. No: 091221.789
`
`(22)
`
`l’ilcd:
`
`Dec. 28, 1998
`
`Related U.S. Application Data
`
`(Continued)
`
`()TllliR PUBI.I(‘.-\'l‘l()NS
`
`Jam: Solid State (I‘bemistfii' “White Light Emitting Glasses”
`Chan et al pp 11-29 1991.*
`
`Soto et al “Full Color Diode" Jpn. J. Appl. Phys. vol. 35
`(1996) pp 1.838 l.839. Jul. 1996*
`
`'I‘b Phosphor
`£11.. Single ("rystal Y3A15012:
`Robbins el
`Produced by Ion implantation; Journal refine ilz‘fer'trot‘immi—
`('at’ Surfer}: vol. 129. No. 4. pp. 816—820.
`
`(63} Continuation oi'application No. Fri—”DFUTUIBT. filed on
`Jun. 26.
`l997.
`
`{(‘ont inued)
`
`Foreign Application Priority Data
`[30]
`.lun. 26. 1996
`(1313)
`......................................... 196 25 622
`
`Sep. 20. 1996
`{D15}
`196 38 66?
`
`(51}
`
`Int. CI.
`11011. 33,430
`
`(2006.01)
`
`(52) U.S. (.'I.
`
`............................................ 2571198: 257389
`
`(58)
`
`(56)
`
`Field of Classification Search
`
`257789.
`2572’98
`See application 1i 1e l‘or complete search history.
`
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`LOWES 1020, Page 1
`VIZIO EX. 1020 Page 0001
`
`LOWES 1020, Page 1
`
`VIZIO Ex. 1020 Page 0001
`
`

`

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`VIZIO Ex. 1020 Page 0002
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`

`

`US 7,078,732 B1
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`Page 3
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`JP
`JP
`JP
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`JP
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`JP
`JP
`JP
`JP
`JP
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`J P
`JP
`JP
`JP
`J P
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
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`“’0
`“’0
`
`56-005884
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`2080970
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`5-152609
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`
`11981
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`White LED Lamp by Nichia. copy ofa Japanese Newspaper.
`dated Sep. 1996.
`Mary V". Iloll‘man: “Improved color rendition in high pres-
`sure mercury vapor lamps“. Journal of 1158. Jan. 1997. pp.
`89 91.
`
`13. M. J. Smets: “Phosphors Based [)1] Rare Earths. A New
`lira in Fluorescent Lighting". Materials Chemistry and
`Physics. 16 (1987). pp. 283—299.
`Frank Mollmer et al.: “Siemens SMT—"1‘OPI..EI')
`
`liir die
`
`Oberliachemnontage". [Siemens SMT 'l'OPl.liil.')S for sur-
`face mounting]. Siemens Components 29. 1991. No. 4. pp.
`147—149.
`
`Summons and Complaint re: Citizen Electronics Company.
`Ltd. v. ()sram (imbll and ()sram [)pto Semiconductors
`(:imbll.
`
`Summons and Complaint re: Citizen Electronics Company.
`I.td. v. Osram (imbI-I and Opto Semiconductors CimbII.
`Office Action from the Korean Patent Ollice dated Aug. 25.
`2005.
`
`for Surface
`MiiIImer et al.. “Siemens SM'I' TOP 1.111)
`Mounting". Siemens Components. BC]. 26. No. 6. pp.
`193—196 (1991).
`
`Translation of Japanese ()Iiice Action Dated .lun. 2. 2005.
`Notice of European Opposition Dated Feb. 28. 2005.
`Six European Search Reports dated May 25. 2005.
`in the Matter offfertoin Light Etttitt'ittg Diodes and Fred—
`nets Containing Some.
`Investigation No. 337—TA—512.
`“Notice of Commision Final Determination of No Violation
`of Section 337 as to One Patent and Determination to
`Remand the Investigation as Certain Other Patents.“ Dated
`Aug. 10. 2005.
`In the Matter of Certain Light—Emitting Diodes and Prod—
`ucts Containing Same, Investigation No. 337 TA 5 12. “Ini-
`tial Determination on Violation o 1' Section 337 and Recom-
`
`mended Determination on Remedy and Bond.“ [Public
`Version). Dated May 10. 2005.
`In the Matter nt‘t'fertoin Light Emitting Diodes and Prod—
`acts Containing Some.
`Investigation No. 337 IA 512.
`“Conunission Opinion.“ {Public Version). Dated Aug. 29.
`2005.
`
`* cited by examiner
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`l
`LIGHT-RADIATING SEMICONDUCTOR
`COMPONENT WITH A LUMINESCENCE
`('TONVERSION ELEMENT
`
`
`CROSS-RIM .RlENCli TO Rlil../\'l'l.il)
`Al’l’l.l(.‘.-’\'I‘IC)N
`
`This is a continuation of copending lntemational Appli-
`cation I’(’l';‘l)li97l()l337. lilcd Jun. 26. [997. which desig-
`nated the United States.
`
`1U
`
`BACKGROUND OI: THE INVENTION
`
`Field of the Invent ion
`
`The invention relates to a light—radiating semiconductor
`component with a semiconductor body that emits electro-
`magnetic radiation during operation of the semiconductor
`component. The component has at least one first and at least
`one second electrical terminal. which are electrically cort-
`ttected to the semiconductor body. The component further
`has a luminescence conversion element with at least one
`luminescent material.
`
`A semiconductor component o i‘ that type is disclosed. for
`example. in (ierman published patent application l)l-‘. 38 04
`293. There. an arrangement having an electroltiminescent or -
`laser diode in which the entire emission spectrum radiated
`by the diode is shilled toward greater wavelengths by means
`ol‘ a plastic element
`that
`is
`treated with a fluorescent.
`light—convening organic dye. The light radiated by the
`arrangement consequently has a dill'erent color from the
`ligltt emitted by the light-emitting diode. Depending on the
`nature o I‘ the dye added to the plastic. light-emitting diode
`arrangements which emit
`light
`in different colors can be
`produced using on‘ and the same type ol‘ light-emitting
`diode.
`
`3U
`
`{ierman published patent application DIE 23 47 289
`discloses an infrared (IR) solid-state lamp in which luini—
`nescent material is applied on the edge ol'an IR diode and
`converts the IR radiation that is radiated there into visible
`
`light. The aim ol‘this measure is. for supervisory purposes.
`to convert a smallest possible part 01‘ the [R radiation emitted
`by the diode into visible light
`in conjunction with the
`smallest possible reduction o lithe intensity o l‘ the emitted IR
`radiation.
`
`Furthermore. [European patent application HP 486 052
`discloses a light-emitting diode in which at least one semi-
`conductor photoluminescent layer is arranged between the
`substrate and an active electroltuninescent layer. The semi—
`conductor photoluminesccnt layer converts the light o la Iirst
`wavelength range
`the light emitted by the active layer in
`the direction ol'the substrate—into light ot‘a second wave—
`length range. with the result
`that. altogether.
`the light-
`emitting diode emits light of dillerent wavelength ranges.
`[n malty potential areas ol‘ application for light-emitting
`diodes. such as. for example. in display elements in motor
`vehicle dashboards. lighting in aircraii and automobiles. and
`in full-color l.Iil) displays. there is incr ‘asingly a demand
`for light-emitting diode arrangements with which polychro-
`tnatic light. in particular white light. can be produced
`.lapancse patent application JP-O? I'm 794-A describes a
`white-light-eutitting. planar light source in which two blue-
`light—emitting diodes are arranged at an end ol'a transparent
`plate. The diodes emit light into the transparent plate. The
`transparent plate is coated with a fluorescent substance on
`one ol‘ the Mo mutually opposite main surfaces. The lluo-
`resccnt substance emits light when it is excited by the blue
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`light of the diodes. The light emitted by the fluorescent
`substance has a dillerent wavelength from that of the blue
`light emitted by the diodes. In that prior art component. it is
`particularly diflicult
`to apply the lluorescent substance in
`such a manner that the light source radiates homogeneous
`white light. l-‘urthermore. the question o l‘ reproducibility in
`mass production also poses major problems because even
`slight fluctuations in the thickness ol'the fluorescent layer.
`for example on account ol‘ unevenness ol' the surface of the
`transparent plate. cause a change in the shade ol'white of the
`radiated light.
`SUMMARY OF THE INVENTION
`
`is accordingly an object of the invention to provide a
`It
`light—radiating semiconductor component. which overcomes
`the above-mentioned disadvantages ofthc hereto lore-known
`devices and methods ol‘this general type zutd which radiates
`homogeneous polychromatie light and ensures technically
`simple mass production with component characteristics that
`are reproducible to the greatest possible extent.
`With the foregoing and other objects in view there is
`provided. in accordance with the invention. a light—radiating
`semiconductor component. comprising:
`a semiconductor body emitting electromagnetic radiation
`during an operation of the semiconductor component. the
`semiconductor body having a semicondtlctor layer sequence
`suitable for emitting electromagnetic radiation o l‘ a first
`wavelength range selected from a spectral region consisting
`of ultraviolet. blue. and green;
`a first electrical terminal and a second electrical terminal
`
`each electrically conductivcly connected to the semiconduc-
`tor body: and
`least one
`a luminescence conversion element with at
`luminescent material. the luminescence conversion element
`
`converting a radiation originating in the first wavelength
`range into radiation ol‘a second wavelength range dill'ercnt
`from the first wavelength reulge. such that the semiconductor
`component emits polychmmatic radiation comprising radia-
`tion o I‘ the first wavelength range and radiation o l‘thc second
`wavelength range.
`The invention provides for the radiation—emitting semi—
`conductor body to have a layer sequence.
`in particular a
`layer sequence with an active semiconductor layer made ol‘
`(ia_\.ln]__‘.l\l or (izt_\Al1__\.N. which emits an electromagnetic
`radiation of a first wavelength range from the ultraviolet.
`blue andt‘or green spectral region during operation ol' the
`semiconductor component. The luminescence conversion
`element converts part of the radiation originating from the
`first wavelength range into radiation ot'a second wavelength
`range.
`in such a way that
`the semiconductor component
`emits polychromatic radiation. in particular polychmtnatic
`light. comprising radiation ofthe first wavelength range and
`radiation of the second wavelength range. This means. for
`example.
`that
`the luminescence conversion element spec-
`trally selectively absorbs part of the radiation emitted by the
`semiconductor body. preferably only over a spectral subre—
`gion of the first wavelength range. and ctnits it in the region
`of longer wavelength (in the second wavelength range).
`Preferably. the radiation emitted by the semiconductor body
`has a relative intensity maximum at a wavelength } E520
`um and the wavelength range which is spectral ly selectively
`absorbed by the ltuninescence conversion element lies out—
`side this intensity maximum.
`In accordance with an added feature of the invention. the
`luminescence conversion element converts radiation of the
`
`first wavelength range into radiation o [a plurality of second
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`wavelength ranges from mutually diflereitt spectral
`subregions. such that
`the semiconductor component emits
`polychromatic radiation comprising radiation of the first
`wavelength range and radiation of the plurality of second
`wavelength ranges. In other words. the invention advanta-
`geously makes it possible also to convert a number (one or
`more) of first spectral subregions originating from the first
`wavelength rattge into a plurality of second wavelength
`ranges. As a result.
`it
`is possible to produce diverse color
`mixtures zmd color tempemturcs.
`The semiconductor component according to the invention
`has the particular advantage that the wavelength spectrum
`generated by way of luminescence conversion and hence the
`color of the radiated light do not depend on the level of the
`operating current intensity through the semiconductor body.
`This has great significance particularly when the ambient
`temperature of the semiconductor component and.
`consequently. as is known. also the operating current intcn~
`sity greatly lluctuate. [Especially light-emitting diodes hav-
`ing a semiconductor body based on 0th are very sensitive
`in this respect.
`In addition. the semiconductor component according to
`the invention requires only a single driving voltage and. as
`a result. also only a single driving circuit configuration.
`whereby the outlay on devices for the driving circuit of tlte
`semiconductor component can be kept very low.
`In accordance with an additional feature of the invention.
`the semiconductor component has a defined main radiating
`direction. and the luminescence conversion element is dis-
`posed substantially downstreatn of the semiconductor body
`in the main radiating direction of the semiconductor com-
`ponent.
`In accordzmce with another feature of the invention. the
`luminescence conversion element is at least one ltnnines—
`
`cence conversion layer disposed in a vicinity of the semi—
`conductor body. In this particularly preferred embodiment of
`the invention. a partially transparent luminescence conver-
`sion layer. that is to say one which is partially transparent to
`the radiation emitted by the radiation-emitting semiconduc-
`tor body. is provided as the luminescence conversion ele—
`tnent above or on the semiconductor body. In order to ensure
`a uniform color of the radiated light.
`the luminescence
`conversion layer is advantageously designed in such a way
`that
`it has a constant
`thickness throughout. This has the
`particular advantage that the path length ol'the light radiated
`by the semiconductor body through the luminescence con-
`version layer is virtually constant foral] radiation directions.
`The efl'eet that can be achieved as a result of this is that the
`
`semiconductor component radiates light of the same color in
`all directions. A further particular advantage of a semicon-
`ductor component according to the invention in accordance
`with this development consists in the [act that a high degree
`oi'repmducibility can be obtained in a simple manner. which
`is of considerable significance for ellicicnt mass production.
`A resist or resin layer treated with lttntinescent material may
`be provided. for example. as the lutninescenee conversion
`layer.
`In accordance with a further feature of the invention. the
`luminescence conversion element is a luminescence conver-
`
`sion encapsulation enclosing at least a part ofthe semicon-
`ductor body and partial
`regions o f the first and second
`electrical terminals. The eneapsttlation is partially transpar—
`ent and encloses at least part ofthe semiconductor body (and
`possibly partial regions of the electrical terminals] and can
`simultaneously be utilized as component encapsulation
`(housing). The advantage of a semiconductor component in
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`accordance with this embodiment consists essentially in the
`fact that conventional production lines used for the produc-
`tion of conventional
`light-emitting diodes {for example
`radial light-emitting diodes) can be utilized for its produc—
`tion. The material of the luminescence conversion encapsu-
`lation is used for the component encapsulation instead ofthe
`transparent plastic which is used for this purpose in con—
`ventional light—emitting diodes.
`In timber advantageous embodiments of the semiconduc-
`tor component according to the invention and of the two
`preferred embodiments mentioned above. the luminescence
`conversion layer or the luminescence conversion encapsu-
`lation is composed of a transparent material. for example
`plastic. preferably epoxy resin. which is provided with at
`least one luminescent material (examples ol'preferred plas—
`tics and luminescettt materials will be found further below).
`In this way. it is possible to prodttcc luminescence conver-
`sion elements in a particularly cost-ellective manner.
`Specifically. the requisite process steps can be integrated in
`conventional production lines for light-emitting diodes with
`no major outlay.
`in accordance with again an added feature of the
`invention.
`the second wavelength range includes wave
`lengths at least some of which are longer titan wavelengths
`of the first wavelength range.
`In accordance with again an additional feature of the
`invention. the semiconductor body is adapted to emit ultra—
`violet
`radialion during operation of [he semiconductor
`component. and the luminescence conversion element con-
`verts at least a port ion of the ultraviolet radiation into visible
`light.
`in accordance with again another icature of the invention.
`the first wavelength range and the second wavelength range
`of the polychrotnatic radiation lie at least partially in mutt:—
`ally complementary-color spechal regions. and a combina-
`tion of radiation from the [irst and second wavelength rzmge
`results in white light.
`When the second spectral sttbregion ol' the first wave-
`length range and a second wavelength range are comple-
`mentary to one another.
`it
`is possible to produce
`polychromatic. in particular white. light from a single col—
`ored light source. in particular a ligltt—emitting diode having
`a single blue-light-radiating semiconductor body. In order.
`for example.
`to produce white light with a blue-light-
`emit‘ting semiconductor body. part o l‘ the radiation from the
`blue spectral region emitted by the semiconductor body is
`converted into the yellow spectral region. which is comple-
`mentarily colored with respect to blue. The color tempera—
`ture or color locus of the white light can in this case be
`varied by a suitable choice of the luminescence conversion
`element. in particular by a suitable choice of the luminescent
`material. its particle size and its concentration. Furthennore.
`these arrangements also advantageously afford the possibil-
`ity of using luminescent material mixtures. as a result of
`which. advantageously.
`the desired htle can be set very
`accurately. Likewise.
`it
`is possible to configure lttmines—
`cence conversion elements inhomogeneously. for example
`by means of inhomogeneous luminescent material distribu-
`tion. I.)illerent path lengths of the light through the lumi-
`nescence conversion eletnent can advantageously be com-
`pensated for as a result of this.
`feature of the
`furtlter
`In accordance with again a
`invention. the first wavelength range emitted by the semi—
`conductor body and two second wavelength ranges produce
`an additive color triad. such that white light is radiated by the
`semicondttctor component during operation thereof.
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`In a further preferred embodiment of the semiconductor
`component according to the invention.
`the luminescence
`conversion element or another constituent of a component
`encapsul