`

`

`

`Patent Application Publication Mar. 27, 2008 Sheet 2 of 9
`
`US 2008/0073662 Al
`
`forming a plurality of lead frames and
`the lead frames are mutually connected
`
`SlOO
`~
`
`electroplating an outer surface
`of the lead frames each ~ S102
`
`coating conductive gel on a surface of the
`heat-dissipating element of the lead frames each
`
`arranging at least one light-emitting
`chip on each of the lead frames
`
`'
`'
`'
`'
`
`forming an encapsulant on each of the lead
`frames and forming integrally a reflector ~ Sl08
`cup on each of the encapsulants
`~
`plating a reflective layer on aninner
`side wall of the reflective cups each
`
`S104
`~
`
`S106
`~
`
`~
`
`S109
`
`connecting the at least one light-emitting chip
`with each of the lead frames by means of ~ SllO
`wire-bonding
`
`coating silver epoxy at wire-bonding connections
`
`coating silicon gel inside
`each of .the reflector cups
`
`pressing a lens on a top
`of the reflector cups each
`
`cutting off the tie-bars to separate
`the lead frames from one another
`
`Sl12
`
`S114
`~
`
`S116
`~
`
`S118
`~
`
`'
`'
`'
`'
`'
`FIG.2
`
`LOWES Ex. 1006 Page 0003
`
`

`

`

`

`

`

`

`

`Patent Application Publication Mar. 27, 2008 Sheet 6 of 9
`
`US 2008/0073662 Al
`
`S200
`~
`
`S204
`~
`
`S206
`~
`
`S208
`~
`
`S210
`~
`
`S203
`~
`
`forming a plurality of lead frames and
`the lead frames are mutually connected
`l
`forming an encapsulant on each of the lead
`integrally ~ S202
`frames and a reflector cup is
`formed on each of the encapsulants
`l
`plating a reflective layer on an inner side
`wall of the reflector cups each
`l
`electroplating an uncovered surface by the
`encapsulant of the lead frames each
`l
`coating conductive gel on a bottom of the
`reflector cups each
`l
`arranging at least one light-emitting chip
`inside each of the reflector cups
`l
`connecting the at least one light-emitting
`chip with each of the lead frames by
`l
`coating silver epoxy at wire-bonding
`connections
`l
`coating silicon gel inside each of the
`reflector cups
`l
`pressing a lens on a top of the reflector
`cups each
`
`~ S212
`
`~ S214
`
`~ S216
`
`~ S218
`
`'
`cutting off the tie-bars to separate the
`lead frames from one another
`FIG.6
`
`LOWES Ex. 1006 Page 0007
`
`

`

`

`

`

`

`

`

`US 2008/0073662 Al
`
`Mar. 27, 2008
`
`1
`
`METHOD OF MANUFACTURING HIGH
`POWER LIGHT-EMITTING DEVICE
`PACKAGE AND STRUCTURE THEREOF
`
`BACKGROUND OF THE INVENTION
`
`[0001]
`1. Field of the Invention
`[0002] The present invention relates to a method of manu(cid:173)
`facturing high power light-emitting device packages and
`structure thereof, and more particularly to a method of
`manufacturing high power LED package and structure
`thereof.
`[0003] 2. Description of the Prior Art
`[0004] Reference is made to FIG. 1, which is a schematic
`view of a light-emitting chip package structure according to
`the prior art. A light-emitting chip lOa is arranged on a first
`metal substrate lla, and a surface electrode of the light(cid:173)
`emitting chip lOa is electrically connected on a second metal
`substrate 12a by a solder wire 13a. The first metal substrate
`lla is electrically connected in contract way with a bottom
`electrode of the light-emitting chip lOa. A transparent col(cid:173)
`loid 14a is packaged to a portion of the first metal substrate
`lla and a portion of the second metal substrate 12a for
`protecting the light-emitting chip lOa and the solder wire
`l3a. The first metal substrate lla and the second metal
`substrate 12a are separately two extended electrodes of the
`light-emitting chip lOa, and two bottom surfaces of the first
`metal substrate lla and the second metal substrate 12a are
`welding surfaces for surface mounting on the external
`substrates.
`[0005] However, because package of the light-emitting
`chip is fixed on the external substrate by means of surface
`mounting, light emitting direction is only perpendicular to
`the substrate.
`[0006] Furthermore, the package of the light-emitting chip
`doesn't provide a heat-dissipating function. Because of the
`limits of material characteristics and packaging technolo(cid:173)
`gies, the light-emitting devices can't achieve specification in
`brightness and use life same as the general light sources.
`One of the important reasons is heat produced during the
`light-emitting devices are operated. Hence, the light-emit(cid:173)
`ting devices with bad heat-dissipating design can cause high
`temperature to reduce brightness and use life.
`[0007] The inventor of the present invention recognizes
`the above shortage should be corrected and special effort has
`been paid to research this field. The present invention is
`presented with reasonable design and good effect to resolve
`the above problems.
`
`SUMMARY OF THE INVENTION
`
`[0008]
`It is a primary object of the present invention to
`provide a method of manufacturing high power light-emit(cid:173)
`ting device packages and structure thereof, wherein the
`structure of the high power light-emitting device packages
`has a heat-dissipating function and an adjustment of light
`emitting direction.
`[0009] For achieving the objectives stated above, the other
`method of manufacturing high power light-emitting device
`packages comprises the steps of: (a) forming a plurality of
`lead frames on a metal strip, the lead frames are mutually
`connected by tie-bars, each of the lead frames includes a
`heat-dissipating element and a plurality ofleads, and each of
`the leads is outwardly extended from one side of the
`heat-dissipating element; (b) electroplating each of outer
`
`surface of the lead frames each; ( c) coating conductive gel
`on a surface of the heat-dissipating element of the lead
`frames each; ( d) arranging at least one light-emitting chip on
`the conductive gel so that one bottom electrode of the
`light-emitting chip electrically connected with the surface of
`the heat-dissipating element; (e) forming an encapsulant on
`each of the lead frames by means of injection molding and
`the encapsulant covered on a portion of the heat-dissipating
`element and a portion of the leads each, a reflector cup
`integrally formed on the encapsulant and a reflective surface
`formed on an inner side wall thereof, and the at least one
`light-emitting chip exposed on a bottom of the reflector cups
`each; (f) connecting at least one top electrode of the light(cid:173)
`emitting chip with one of the leads by means of wire(cid:173)
`bonding; (g) coating silver epoxy at wire-bonding connec(cid:173)
`tions; (h) coating silicon gel inside each of the reflector cups
`and forming integrally a focusing light convex surface on a
`top surface of the silicon gel; and (i) cutting off the tie-bars
`to separate the lead frames from one another, whereby
`forming a plurality of high power light-emitting device
`packages.
`[0010]
`In a preferred embodiment, wherein the step (e)
`further comprises: plating a reflective layer on each of the
`reflective surfaces.
`[0011] Further, in other preferred embodiments, wherein
`the step (h) after coating silicon gel inside each of the
`reflector cups, a lens is pressed on a top of the reflector cups
`each.
`[0012] Furthermore,
`in other preferred embodiments,
`wherein the step (h) that it is only coating silicon gel inside
`each of the reflector cups.
`[0013] For achieving the objectives stated above, the
`structure of high power light-emitting device packages com(cid:173)
`prises a lead frame has a heat-dissipating element and a
`plurality of leads, and each of the leads is outwardly
`extended from one side of the heat-dissipating element; an
`electroplating layer formed on an outer surface of the lead
`frames each; a conductive gel layer coated on a surface of
`the heat-dissipating element; at least one light-emitting chip
`disposed on the conductive gel layer so that one bottom
`electrode of the light-emitting chip electrically connected
`with the surface of the heat-dissipating element; an encap(cid:173)
`sulant covered on a portion of the heat-dissipating element
`and a portion of the leads each, a reflector cup integrally
`formed on the encapsulant and a reflective surface formed
`on an inner side wall thereof, and the at least one light(cid:173)
`emitting chip exposed on a bottom of the reflector cups each;
`a solder wire electrically connected with at least one top
`electrode of the light-emitting chip to one of the leads; a
`silver epoxy layer formed on a connection location of the
`solder wire and the at least one top electrodes of the
`light-emitting chip, and on a connection location of the
`solder wire and the one of the leads; and a silicon gel layer
`formed inside the reflector cups for covering at least one
`light-emitting chip and the solder wire, whereby forming a
`plurality of high power light-emitting device packages.
`[0014] Wherein the structure of the high power light(cid:173)
`emitting device packages has a heat-dissipating function and
`an adjustment of light emitting direction are separately
`provided from the heat-dissipating element and the leads are
`extended from one side of the heat-dissipating element.
`[0015]
`In the preferred embodiment, the structure of high
`power light-emitting device packages further comprises a
`reflective layer formed on the reflective surface.
`
`LOWES Ex. 1006 Page 0011
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`

`

`US 2008/0073662 Al
`
`Mar. 27, 2008
`
`2
`
`[0016] Further, the structure of high power light-emitting
`device packages further comprises a lens is disposed on a top
`of the reflector cups each and is connected with the silicon
`gel layer.
`[0017] Furthermore,
`in other preferred embodiments,
`wherein the silicon gel layer is directly formed inside the
`reflector cups.
`[0018] For achieving the objectives stated above, the other
`method of manufacturing high power light-emitting device
`packages comprises the steps of: (a) forming a plurality of
`lead frames on a metal strip, the lead frames are mutually
`connected by tie-bars, each of the lead frames includes a
`heat-dissipating element and a plurality ofleads, and each of
`the leads is outwardly extended from one side of the
`heat-dissipating element; (b) forming an encapsulant on
`each of the lead frames by means of injection molding and
`the encapsulant is covered on a portion of the heat-dissipat(cid:173)
`ing element and a portion of the leads each, a reflector cup
`is formed on the encapsulant and a reflective surface is
`formed on an inner side wall thereof, and a partial surface of
`the heat-dissipating element and a partial surface of the leads
`each are exposed on a bottom of the reflector cups each; ( c)
`electroplating each of uncovered surface by the encapsulant
`of the lead frames each; ( d) coating conductive gel on a
`bottom of the reflector cup; (e) arranging at least one
`light-emitting chip on the conductive gel so that one bottom
`electrode of the light-emitting chip is electrically connected
`with a surface of the heat-dissipating element; (f) connecting
`at least one top electrode of the light-emitting chip with one
`of the leads by means of wire-bonding ; (g) coating silver
`epoxy at wire-bonding connections; (h) coating silicon gel
`inside each of the reflector cups and forming integrally a
`focusing light convex surface on a top surface of the silicon
`gel; and (i) cutting off the tie-bars to separate the lead frames
`from one another, whereby forming a plurality of high power
`light-emitting device packages.
`[0019]
`In a preferred embodiment, wherein the step (b)
`further comprises: plating a reflective layer on each of the
`reflective surfaces.
`[0020] Further, in other preferred embodiments, wherein
`the step (h) further comprises: after coating silicon gel inside
`each of the reflector cups, a lens is pressed on a top of the
`reflector cups each.
`[0021] Furthermore,
`in other preferred embodiments,
`wherein the step (h) that it is only coating silicon gel inside
`each of the reflector cups.
`[0022] For achieving the objectives stated above, the
`structure of high power light-emitting device packages com(cid:173)
`prises a lead frame has a heat-dissipating element and a
`plurality of leads, and each of the leads is outwardly
`extended from one side of the heat-dissipating element; an
`encapsulant is covered on a portion of the heat-dissipating
`element and a portion of the leads each, a reflector cup is
`formed on the encapsulant and a reflective surface is formed
`on an inner side wall thereof, and a partial surface of the
`heat-dissipating element and a partial surface of the leads
`each are exposed on a bottom of the reflector cups each; an
`electroplating layer is formed on each of uncovered surface
`of the lead frames each; a conductive gel layer is coated on
`the bottom of the reflector cups; at least one light-emitting
`chip is disposed on the conductive gel layer so that one
`bottom electrode of the light-emitting chip is electrically
`connected with a surface of the heat-dissipating element; a
`solder wire is electrically connected with at least one top
`
`electrode of the light-emitting chip to one of the leads; a
`silver epoxy layer is formed on a connection location of the
`solder wire and the at least one top electrode of the light(cid:173)
`emitting chip, and on a connection location of the solder
`wire and the one of the leads; and a silicon gel layer is
`formed inside the reflector cups for covering at least one
`light-emitting chip and the solder wire, and a focusing light
`convex surface is integrally formed on a top surface of the
`silicon gel, whereby forming a plurality of high power
`light-emitting device packages.
`[0023] Wherein the structure of the high power light(cid:173)
`emitting device packages has a heat-dissipating function and
`an adjustment of light emitting direction are separately
`provided from the heat-dissipating element and the leads are
`extended from one side of the heat-dissipating element.
`[0024]
`In the preferred embodiment, the structure of high
`power light-emitting device packages further comprises a
`reflective layer formed on the reflective surface.
`[0025] Further, the structure of high power light-emitting
`device packages further comprises a lens is disposed on a top
`of the reflector cups each and is connected with the silicon
`gel layer.
`[0026] Furthermore,
`in other preferred embodiments,
`wherein the silicon gel layer is directly formed inside the
`reflector cups.
`[0027]
`It is to be understood that both the foregoing
`general description and the following detailed description
`are exemplary, and are intended to provide further explana(cid:173)
`tion of the invention as claimed. Other advantages and
`features of the invention will be apparent from the following
`description, drawings and claims.
`
`BRIEF DESCRIPTION OF THE DRAWINGS
`
`[0028] The above and further advantages of this invention
`may be better understood by referring to the following
`description, taken in conjunction with the accompanying
`drawings, in which:
`[0029] FIG. 1 is a schematic view of a light-emitting chip
`package structure according to the prior art;
`[0030] FIG. 2 is a first manufacturing flowchart of a
`preferred embodiment according to the present invention;
`[0031] FIG. 3 is a cross-sectional view of a first preferred
`embodiment according to the present invention;
`[0032] FIG. 4 is a cross-sectional view of a second pre(cid:173)
`ferred embodiment according to the present invention;
`[0033] FIG. 5 is a cross-sectional view of a third preferred
`embodiment according to the present invention;
`[0034] FIG. 6 is a second manufacturing flowchart of a
`preferred embodiment according to the present invention;
`[0035] FIG. 7 is a cross-sectional view of a fourth pre(cid:173)
`ferred embodiment according to the present invention;
`[0036] FIG. 8 is a cross-sectional view of a fifth preferred
`embodiment according to the present invention; and
`[0037] FIG. 9 is a cross-sectional view of a sixth preferred
`embodiment according to the present invention.
`[0038] The drawings will be described further in connec(cid:173)
`tion with the following detailed description of the present
`invention.
`
`DETAILED DESCRIPTION OF THE
`PREFERRED EMBODIMENTS
`
`[0039] Reference is made to FIG. 2 which 1s a first
`manufacturing flowchart of a preferred embodiment accord-
`
`LOWES Ex. 1006 Page 0012
`
`

`

`US 2008/0073662 Al
`
`Mar. 27, 2008
`
`3
`
`ing to the present invention, and references are made from
`FIG. 3 to FIG. 5 which are separately cross-sectional views
`of a first preferred embodiment to a third preferred embodi(cid:173)
`ment according to the present invention. A method of
`manufacturing high power light-emitting device packages
`and structure thereof, wherein the method of manufacturing
`high power light-emitting device packages comprises the
`steps of: forming a plurality of lead frames and the lead
`frames are mutually connected (SlOO); electroplating an
`outer surface of the lead frames each (S102); coating con(cid:173)
`ductive gel on a surface of the heat-dissipating element of
`the lead frames each (S104); arranging at least one light(cid:173)
`emitting chip inside each of the lead frames (S106); forming
`an encapsulant on each of the lead frames and forming
`integrally a reflector cup on each of the encapsulants (S108);
`connecting the at least one light-emitting chip with each of
`the lead frames by means of wire-bonding (SllO); coating
`silver epoxy at wire-bonding connections (S112); coating
`silicon gel inside each of the reflector cups (S114); pressing
`a lens on a top of the reflector cups each (S116); and cutting
`off the tie-bars to separate the lead frames from one another
`(S118). It can be seen in the following detailed description:
`[0040] First, a plurality of lead frames are formed on a
`metal strip with good electric conductivity and good heat
`conduction, and the lead frames are mutually connected by
`tie-bars. As shown in FIG. 3 to FIG. 5, wherein each of the
`lead frames 1 includes a heat-dissipating element 11 and a
`plurality of leads 12, and each of the leads 12 is extended
`outwardly from one side of the heat-dissipating element 11
`(SlOO).
`[0041] Next, electroplating a layer of metal on each of
`outer surface of the lead frames 1 each to form an electro(cid:173)
`plating layer 2 (S102);
`[0042] Next, coating conductive gel on a top surface of the
`heat-dissipating element 11 of the lead frames 1 each to form
`a conductive gel layer 3 (S104);
`[0043] Next, arranging at least one light-emitting chip 4
`on each of the conductive gel layer 3 so that one bottom
`electrode of the light-emitting chip 4 electrically connected
`on the surface of the heat-dissipating element 11 (S106);
`[0044] Next, forming an encapsulant 5 on each of the lead
`frames 1 by means of injection molding and the encapsulant
`5 covered on a portion of the heat-dissipating element 11 and
`a portion of the leads 12 each, and a reflector cup 51
`integrally formed on the encapsulant 5 and a reflective
`surface 511 formed on an inner side wall thereof, and the at
`least one light-emitting chip 4 exposed on a bottom of the
`reflector cups 51 each (S108);
`[0045] Next, at least one top electrode of the light-emitting
`chip 4 is connected with one of the leads 12 by a solder wire
`7 (SllO).
`[0046] Next, a connection location of the solder wire 7 and
`the at least one top electrodes of the light-emitting chip 4,
`and a connection location of the solder wire 7 and the one
`of the leads 12 are coated by silver epoxy to form a silver
`epoxy layer 8 for fixing the solder wire 7 (S112).
`[0047] Next, each of the reflector cups 51 is coated silicon
`gel therein to form a silicon gel layer 9 (shown in FIG. 3) for
`covering the light-emitting chip 4 and the solder wire 7
`(S114).
`[0048] Next, a lens 10 is pressed on a top opening of the
`reflector cups 51 each, and the lens 10 has a focusing-light
`function to enhance light emitting brightness (S116).
`
`[0049] Finally, the tie-bars are cut off to separate the lead
`frames 1 from one another so as to form a plurality of high
`power light-emitting device packages (S118).
`[0050] The method of manufacturing high power light(cid:173)
`emitting device packages stated above, wherein the step
`(S108) further comprises: a reflective layer 4 is plated on
`each of the reflective surfaces 511 (S109).
`[0051] Further, in the step (S114), the silicon gel is coated
`inside each of the reflector cups 51 and a focusing light
`convex surface 91 is integrally formed on a top surface of
`the silicon gel (shown in FIG. 4), wherein the focusing light
`convex surface 91 has a focusing-light function to enhance
`light emitting brightness.
`[0052] Furthermore, in the step (S114), the silicon gel is
`coated inside each of the reflector cups 51 to form a silicon
`gel layer 9 (shown in FIG. 5), wherein the silicon gel layer
`9 has a transmitting-light function as a lens.
`[0053] As shown in FIG. 3, according to the method of
`manufacturing stated above for manufacturing an structure
`of high power light-emitting device packages of the first
`preferred embodiment comprises a lead frame 1, an elec(cid:173)
`troplating layer 2, a conductive gel layer 3, a light-emitting
`chip 4, an encapsulant 5, a reflective layer 6, a solder wire
`7, a silver epoxy layer 8, a silicon gel layer 9 and a lens 10.
`[0054] The lead frame 1 includes a heat-dissipating ele(cid:173)
`ment 11 and a plurality ofleads 12, and each of the leads 12
`is extended outwardly from one side of the heat-dissipating
`element 11. The electroplating layer 2 is formed on an outer
`surface of the lead frame of the lead frames 1 each. The
`conductive gel layer 3 is coated on a top surface of the
`reflector cup 11 of the lead frames 1 each for fixing the
`light-emitting chip 4. The light-emitting chip 4 is disposed
`on the conductive gel layer 3 so that a bottom electrode of
`the light-emitting chip 4 is electrically connected with a top
`surface of the heat-dissipating element 11. The encapsulant
`5 is covered on a portion of the heat-dissipating element 11
`and a portion of the leads 12 each, a reflector cup 51 is
`formed on the encapsulant 5 and a reflective surface 511 is
`formed on an inner side wall thereof, and the light-emitting
`chip 4 is exposed on a bottom of the reflector cups 51. The
`reflective layer 6 is formed on the reflective surface 511. The
`solder wire 7 is electrically connected with a top electrode
`of the light-emitting chip 4 to one of the leads 12. The silver
`epoxy layer 8 is formed on a connection location of the
`solder wire 7 and the top electrode of the light-emitting chip
`4, and on a connection location of the solder wire 7 and the
`one of the leads 12. The silicon gel layer 9 is formed inside
`the reflector cups 21 for covering the light-emitting chip 4
`and the solder wire 7. The lens 10 is disposed on a top of the
`reflector cups 51 each and connected with a top surface of
`the silicon gel layer 9.
`[0055] Further, in the second preferred embodiment as
`shown in FIG. 4, the silicon gel is coated inside each of the
`reflector cups 51 and a focusing light convex surface 91 is
`integrally formed on a top surface of the silicon gel layer 9
`so that light passed through the focusing light convex
`surface 91 and focused to enhance light emitting brightness.
`[0056] Furthermore, in the third preferred embodiment as
`shown in FIG. 5, the silicon gel is coated inside each of the
`reflector cups 51 to form a silicon gel layer 9, wherein the
`silicon gel layer 9 has transmitting-light function.
`[0057] Reference is made to FIG. 6 which is a second
`manufacturing flowchart of a preferred embodiment accord(cid:173)
`ing to the present invention, and references are made from
`
`LOWES Ex. 1006 Page 0013
`
`

`

`US 2008/0073662 Al
`
`Mar. 27, 2008
`
`4
`
`FIG. 7 to FIG. 9 which are separately cross-sectional views
`of a fourth preferred embodiment to a sixth preferred
`embodiment according to the present invention. A method of
`manufacturing high power light-emitting device packages
`and structure thereof, wherein the method of manufacturing
`high power light-emitting device packages comprises the
`steps of: forming a plurality of lead frames and the lead
`frames are mutually connected (S200); forming an encap(cid:173)
`sulant on each of the lead frames and a reflector cup is
`integrally formed on each of the encapsulants (S202); elec(cid:173)
`troplating each of the lead frames (S204); coating conduc(cid:173)
`tive gel on a bottom of the reflector cups each (S206);
`arranging at least one light-emitting chip inside each of the
`reflector cups (S208); connecting the at least one light(cid:173)
`emitting chip with each of the lead frames by means of
`wire-bonding (S210); coating silver epoxy at wire-bonding
`connections (S212); coating silicon gel inside each of the
`reflector cups (S214); pressing a lens on a top of the reflector
`cups each (S216); and cutting off the tie-bars to separate the
`lead frames from one another (S218). It can be seen in the
`following detailed description:
`[0058] First, a plurality of lead frames are formed on a
`metal strip with good electric conductivity and good heat
`conduction, and the lead frames are mutually connected by
`tie-bars. As shown in FIG. 7 to FIG. 9, wherein each of the
`lead frames 1' includes a heat-dissipating element 11' and a
`plurality of leads 12', and each of the leads 12' is extended
`outwardly from one side of the heat-dissipating element 11'
`(S200).
`[0059] Next, an encapsulant 2' is formed on each of the
`lead frames 1' by means of injection molding, the encapsu(cid:173)
`lant 2' is covered on a portion of the heat-dissipating element
`11' and a portion of the leads 12', a reflector cup 21' is formed
`on the encapsulant 2' and a reflective surface 211' is formed
`on an inner side wall thereof, and a partial surface of the
`heat-dissipating element 11' and a partial surface of the leads
`12' each are exposed on a bottom of the reflector cups 21'
`each (S202). And further, forming an electroplating layer 3'
`on each of uncovered surface by the encapsulant 2' of the
`lead frames 1' each (S204).
`[0060] Next, the bottom of the reflector cups 21' each is
`coated conductive gel to form a conductive gel layer 5'
`(S206).
`[0061] Next, a light-emitting chip 6' is disposed on the
`conductive gel layer 5' so that a bottom electrode of the
`light-emitting chip 6' is electrically connected with a surface
`of the heat-dissipating element 11' (S208).
`[0062] Next, at least one top electrode of the light-emitting
`chip 6' is connected with one of the leads 12' by a solder wire
`7' (S210).
`[0063] Next, a connection location of the solder wire 7'
`and the at least one top electrodes of the light-emitting chip
`6', and a connection location of the solder wire 7' and the one
`of the leads 12' are coated by silver epoxy to form a silver
`epoxy layer 8' for fixing the solder wire 7' (S212).
`[0064] Next, each of the reflector cups 21' is coated silicon
`gel therein to form a silicon gel layer 9' (shown in FIG. 7)
`for covering the light-emitting chip 6' and the solder wire 7'
`(S214).
`[0065] Next, a lens 10' is pressed on a top opening of the
`reflector cups 21' each, and the lens 10' has a focusing-light
`function to enhance light emitting brightness (S216).
`
`[0066] Finally, the tie-bars are cut off to separate the lead
`frames 1' from one another so as to form a plurality of high
`power light-emitting device packages (S218).
`[0067] The method of manufacturing high power light(cid:173)
`emitting device packages stated above, wherein the step
`(S202) further comprises: a reflective layer 4' is plated on
`each of the reflective surfaces 211' (S203).
`[0068] Further, in the step (S214), the silicon gel is coated
`inside each of the reflector cups 21' and a focusing light
`convex surface 91' is integrally formed on a top surface of
`the silicon gel (shown in FIG. 8), wherein the focusing light
`convex surface 91' has a focusing-light function to enhance
`light emitting brightness.
`[0069] Furthermore, in the step (S214), the silicon gel is
`coated inside each of the reflector cups 21' to form a silicon
`gel layer 9' (shown in FIG. 9), wherein the silicon gel layer
`9' has a transmitting-light function as a lens.
`[0070] As shown in FIG. 7, according to the method of
`manufacturing stated above for manufacturing an structure
`of high power light-emitting device packages of the fourth
`preferred embodiment comprises a lead frame 1', an encap(cid:173)
`sulant 2', an electroplating layer 3', a reflective layer 4', a
`conductive gel layer 5', a light-emitting chip 6', a solder wire
`7', a silver epoxy layer 8', a silicon gel layer 9' and a lens 10'.
`[0071] The lead frames 1' includes a heat-dissipating ele(cid:173)
`ment 11' and a plurality of leads 12', and each of the leads
`12' is extended outwardly from one side of the heat-dissi(cid:173)
`pating element 11'. The encapsulant 2' is covered on a
`portion of the heat-dissipating element 11' and a portion of
`the leads 12' each, a reflector cup 21' is formed on the
`encapsulant 2' and a reflective surface 211' is formed on an
`inner side wall thereof, and a partial surface of the heat(cid:173)
`dissipating element 11' and a partial surface of the leads 12'
`each are exposed on a bottom of the reflector cups 21' each.
`The electroplating layer 3' is formed on each of uncovered
`surface of the lead frames 1' each. The reflective layer 4' is
`formed on the reflective surface 211'. The conductive gel
`layer 5' is coated on the bottom of the reflector cups 21' for
`fixing the light-emitting chip 6'. The light-emitting chip 6' is
`disposed on the conductive gel layer 5' so that a bottom
`electrode of the light-emitting chip 6' is electrically con(cid:173)
`nected with a surface of the heat-dissipating element 11'. The
`solder wire 7' is electrically connected with a top electrode
`of the light-emitting chip 6' to one of the leads 12'. The silver
`epoxy layer 8' is formed on a connection location of the
`solder wire 7' and the top electrode of the light-emitting chip
`6', and on a connection location of the solder wire 7' and the
`one of the leads 12'. The silicon gel layer 9' is formed inside
`the reflector cups 21' for covering the light-emitting chip 6'
`and the solder wire 7'. The lens 10' is disposed on a top of
`the reflector cups 21' each and connected with a top surface
`of the silicon gel layer 9'.
`[0072] Further, in the fifth preferred embodiment as shown
`in FIG. 8, the silicon gel is coated inside each of the reflector
`cups 21' and a focusing light convex surface 91' is integrally
`formed on a top surface of the silicon gel layer 9' so that light
`passed through the focusing light convex surface 91' and
`focused to enhance light emitting brightness.
`[0073] Furthermore, in the sixth preferred embodiment as
`shown in FIG. 9, the silicon gel is coated inside each of the
`reflector cups 21' to form a silicon gel layer 9', wherein the
`silicon gel layer 9' has transmitting-light function.
`
`LOWES Ex. 1006 Page 0014
`
`

`

`US 2008/0073662 Al
`
`Mar. 27, 2008
`
`5
`
`[0074]
`In conclusion, the method of manufacturing high
`power light-emitting device packages and structure of the
`present invention has the following advantages:
`[0075]
`1. The lead frame includes a heat-dissipating ele(cid:173)
`ment and a plurality of leads, and each of the leads is
`extended outwardly from one side of the heat-dissipating
`element so that the heat-dissipating element can improve
`heat-dissipating questions of the high power light-emitting
`device packages.
`[0076] 2. The leads fixed on an external substrate can be
`bent to adjust light emitting directions.
`[0077] Although the present invention has been described
`with reference to the preferred embodiment thereof, it will
`be understood that the invention is not limited to the details
`thereof. Various substitutions and modifications have been
`suggested in the foregoing description, and others will occur
`to those of ordinary skill in the art. Therefore, all such
`substitutions and modifications are intended to be embraced
`within the scope of the invention as defined in the appended
`claims.
`What is claimed is:
`1. A method of manufacturing high power light-emitting
`device packages, comprising the steps of:
`(a) forming a plurality oflead frames on a metal strip, the
`lead frames mutually connected by tie-bars, each of the
`lead frames including a heat-dissipating element and a
`plurality of leads, and each of the leads outwardly
`extended from one side of the heat-dissipating element;
`(b) electroplating an outer surface of the lead frames each;
`(c) coating conductive gel on a surface of the heat(cid:173)
`dissipating element of the lead frames each;
`(d) arranging at least one light-emitting chip