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`translations@geotext.com
`www.geotext.com
`
`STA TE OF NEW YORK
`
`COUNTY OF NEW YORK
`
`SS
`
`CERTIFICATION
`
`This is to certify that the attached translation is, to the best of my knowledge and belief, a true
`
`and accurate translation from Japanese into English of the attached Patent Application Disclosure
`
`No. 2006-93697, dated April 6, 2006.
`
`~ ///_./, ~~
`
`Kristen Duffy, Senior Managing Editor
`Geotext Translations, Inc.
`
`Sworn to and subscribed before me
`this /l'1\t>dayof@rw-r;r-.2ofr:
`......._
`~~
`
`t: +1.212.631.7432
`
`t: +1.713.353.3909
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`t: +1.415.576.9500
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`t: +44.20. 7553.4100
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`t: +33.1 .42.68.51 .47
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`t: +46.8.463. 11 .87
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`t: +49.69.7593.8434
`
`VIZIO Ex. 1009 Page 0013
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`

`

`(19) Japanese Patent Office (JP)
`
`(12) JAPANESE UNEXAMINED
`PATENT APPLICATION
`PUBLICATION (A)
`
`( 11) Patent Application Disclosure No.
`2006-93697
`(P2006-93697 A)
`(43) Publication Date April 6, 2006
`(Heisei 18)
`
`(51) Int. CL
`HOJL 33100 (01.2006)
`
`FI
`HOlL
`
`33/00
`
`N
`
`Theme Code (Reference)
`5F041
`
`(Total 11 pages)
`
`(21) Application No.:
`(22) Date of Filing:
`(31) Priority Claim Number:
`(32) Priority Date:
`(33) Priority Country:
`
`Examination Request: Made Total Number of Claims: 8 OL
`2005-267552 (P2005-267552)
`(71) Applicant:
`505077275
`TCO Company Limited
`September 14, 2005 (Heisei 17)
`202-3 Chunui-dong, Wonmi-gu, Bucheon-si,
`20-2004-0026925
`Gyeonggi-do, The Republic of Korea, 420-857
`September 20, 2004 (Heisei 16)
`Korea(KR)
`100081695
`OGURA, Masaaki, Patent Attorney
`PARK, Jon Ho
`106-1801 Seohae APT, Pungmu-dong, Gimpo-si,
`Gyeonggi-do, The Republic of Korea
`F Term (Reference) 5F041 AA03 AA23 BB13 BB25 CA40
`DA12 DA13 DAl 7 DA43 DA56
`DA83
`
`(74) Agent:
`
`(72) Inventor:
`
`(54) [Title oflnvention] HIGH LUMINANCE LIGHT-EMITTING DIODE INSTALLED WITH FUNCTION TO PROTECT AGAINST
`
`ELECTROSTATIC DISCHARGE IMPACT
`
`I 1
`
`~g
`2 v
`
`7
`
`(57) [Abstract]
`
`[Problem] To provide a light-emitting diode which solves the issue of
`InGaN/GaN-based light-emitting diode chip, which is the light source
`for the Al20 3 substrate configuration, being vulnerable to electrostatic
`discharge impact.
`
`[Resolution Means] Produce a high luminance light-emitting diode
`
`being resistant to an electrostatic discharge impact by a method
`
`constituting the following steps: adhering an electrostatic discharge
`impact protection element to a lead frame using a solder paste;
`
`subsequently forming a reflection cup having a reflector on the
`surface thereof with a Ti02 white thermosetting resin using the
`transfer mold method; die bonding and wire bonding an
`
`InGaN/GaN-based light-emitting diode chip to a light-emitting diode
`pad which is disposed inside the reflection cup having a reflector on
`the surface thereof; filling the inside of a reflection cup having a
`
`reflector on the surface thereof with a light-transmitting epoxy resin;
`
`and subsequently conducting a sawing or trimming process as well as
`
`a forming process of the same to singulate it.
`
`[Selected Drawing] Figure 1 a
`
`VIZIO Ex. 1009 Page 0014
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`

`

`(2)
`
`Patent Application Disclosure No. 2006-93697 (P2006-93697 A)
`
`[Scope of Claims]
`What is claimed is:
`[Claim 1]
`A high luminance light-emitting diode installed with a protection function against electrostatic discharge impact, the light-emitting diode,
`comprising: a lead frame consisting of a pair of a cathode lead and an anode lead; a reflection cup having a reflector on the surface, which
`is provided on the upper side of the cathode lead and the anode lead and which functions to send the light being emitted from the
`light-emitting diode in one direction; an electrostatic discharge impact protection element being inserted inside the above reflection cup; a
`GaN/InGaN-based chip being adhered to a die pad cup of the cathode lead; a conducting wire to tum on electricity to the cathode lead and
`the anode lead as well as the light-emitting diode chip; and a light-transmitting epoxy resin provided inside the reflection cup;
`wherein the reflection cup is produced from a TiOrbased white thermosetting resin by the transfer mold method; electrostatic discharge
`impact protection elements of one or more locations is adhered using solder paste to where the wall surfaces of the reflection cup exist,
`being in the direction of the light being emitted from the light-emitting diode before molding; and subsequently the TiOrbased white
`thermosetting resin is transfer-molded thereon, and trimmed and formed to be individualized.
`[Claim 2]
`The high luminance light-emitting diode installed with a protection function against an electrostatic discharge impact according to Claim
`1, wherein the above light-emitting diode chip and the electrostatic discharge impact protection elements are arrayed in a plurality of rows,
`and the reflection cup having a reflector on the surface thereof is configured with many rows.
`[Claim 3]
`The high luminance light-emitting diode installed with a protection function against an electrostatic discharge impact according to Claim
`1, wherein a plurality of electrostatic discharge impact protection elements is installed inside the rear side part of the reflection cup having a
`reflector on the surface thereof, which consists of the Ti Or based white thermosetting resin.
`[Claim 4]
`The high luminance light-emitting diode installed with a protection function against an electrostatic discharge impact according to any of
`Claims 1through3, wherein a semiconductor resistance element is used as the electrostatic discharge impact protection element.
`[Claim 5]
`The high luminance light-emitting diode installed with a protection function against an electrostatic discharge impact according to any of
`Claims 1 through 3, wherein an electrostatic voltage diode may be used as the electrostatic discharge impact protection element.
`[Claim 6]
`The high luminance light-emitting diode installed with a protection function against an electrostatic discharge impact according to any of
`Claims 1through3, further comprising: a wavelength converting phosphor formed on the GaN/InGaN-based chip which is disposed inside
`the white TiOrbased white thermosetting resin; an air layer formed on the wavelength converting phosphor; and an Si02 glass adhered to
`the top part of the reflection cup, which consists of the TiOrbased white thermosetting resin 9.
`[Claim 7]
`The high luminance light-emitting diode installed with a protection function against an electrostatic discharge impact according to any of
`Claims 1 through 3, wherein the light-emitting diode chip and the electrostatic discharge impact protection element may be arrayed in a
`plurality of rows on a reflecting cup having a reflector configured on the plurality of rows.
`[Claim 8]
`The high luminance light-emitting diode installed with a protection function against an electrostatic discharge impact according to any of
`Claims 1 through 3, wherein the above reflection cup is formed with a plastic injection material, and a large number of light-emitting diode
`chips are arrayed on separate die pads respectively on one plastic reflector.
`
`[Detailed Description of the Invention]
`[Technical Field of Invention]
`[0001]
`The present invention relates to a protection method for protecting InGaN/GaN-based light-emitting diode chips in case of electrostatic
`discharge impact (ESD), and more particularly to a high luminance light-emitting diode installed with a protection function which is strong
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`Patent Application Disclosure No. 2006-93697 (P2006-93697 A)
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`against electrostatic discharge impact and resistant to electrostatic discharge impact and configured by the following steps: first mounting
`an electrostatic discharge impact protection element {semiconductor resistance element (varistor)} or an electrostatic voltage diode
`(Zener-Diode) using solder paste on the bottom surface of the die pad for an electrostatic discharge impact protection element of silver
`plated lead frame having a plurality of rows; then forming a transfer mold type reflector with a white thermosetting resin (Ti02);
`subsequently die bonding and wire bonding an InGaN/GaN-based light-emitting diode chip to the light-emitting die pad part inside the
`reflector and filling the inside of the reflector with a light-transmitting epoxy resin; and finally perform a sawing or a trimming process as
`well as a forming process in order to singulate the same.
`[Related Art]
`[0002]
`Figures 8a and 8b illustrate the configuration of a conventional light-emitting diode for protection against electrostatic discharge impact.
`[0003]
`Figure 8a illustrates a conventional configuration consisting of a lead frame being formed with a reflection cup 9 having a reflector on
`the surface configured with a plastic injection material 92 (thermoplastics resin); an InGaN/GaN-based light-emitting diode chip 10 which
`emits light when voltage is applied; a cathode lead 4 and an anode lead 5 of a conductive metal material for applying voltage to the
`InGaN/GaN-based light-emitting diode chip 10; wherein the chip 10 is bonded on the die pad being formed at the edge of the cathode lead
`4 using a conductive silver (Ag) adhesive agent, while an electrostatic voltage diode chip Z is bonded on the pad part being disposed at the
`edge of the anode lead using a silver adhesive agent; and the chip 10 is wire-bonded with the edges of the cathode lead 4 and the anode lead
`5 using a wire 11, in order to electronically connect the cathode lead 4 and the anode lead 5 with each other.
`[0004]
`In addition, Figure 8b illustrates a configuration consisting of a lead frame formed with a reflection cup 91 having a reflector on the
`surface configured of a plastic injection material 92 (thermoplastics); an InGaN/GaN-based light-emitting diode chip 10 which emits light
`when voltage is applied; and a cathode lead 4 and an anode lead 5 of a conductive metal material for applying voltage to the
`InGaN/GaN-based light-emitting diode chip 1 O; wherein the electrostatic voltage diode chip Z is bonded on the die pad being formed at the
`edge of the cathode lead 4 using a conductive silver adhesive agent, while an InGaN/GaN-based light-emitting diode chip 10 is adhered on
`the top surface of the electrostatic voltage diode chip Z using gold bumps (Au bumps) or solder bumps; and then the electrostatic voltage
`diode chip Z is wire-bonded with the edges of the cathode lead 4 and the anode lead 5 using a wire 11 in order to electronically connect the
`cathode lead 4 and the anode lead 5 with each other.
`[0005]
`As illustrated in these two configuration technologies, subsequently in the process, the chip 10 and the diode chip Z are molded by a
`light-transmitting epoxy resin 15 being composed with an insulating material to protect the same from outside while keeping the other
`edges of the cathode lead 4 and the anode lead 5 exposed to the outside in order to ensure that voltage may be applied to the chip 10
`outside.
`[0006]
`The optical semiconductor chip 10 illuminates to function as voltage is applied to the chip 10 via the cathode lead 4 and the anode lead 5
`when the cathode lead 4 and the anode lead 5 of the light-emitting diode being exposed to the outside are electronically connected with a
`circuit to be used, and the molding 15 is usually formed with a transparent epoxy resin and produced either in green, blue or white
`depending on the type of the light-emitting diode chip 10 being used.
`[0007]
`However, such configuration, wherein the electrostatic voltage diode chip Z is mounted inside the reflection cup 91 having a reflector on
`the surface of the plastic injection material 92, has a disadvantage of reducing illuminance by at least 15% or more as the electrostatic
`voltage diode either absorbs the light being emitted from the InGaN/GaN-based light-emitting diode 10 or scatters the same, thus inhibiting
`the light to be emitted in the radiation direction.
`[0008]
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`Patent Application Disclosure No. 2006-93697 (P2006-93697A)
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`In addition, the plastic injection material 92 being a thermoplastic material, is used as a material for the refection cup 91 having a
`reflector on the surface; however, it has the property of being easily affected by heat, thus inducing the color to change and reliability to be
`reduced while in the high-temperature production process of the light-emitting diode, and has the disadvantage of limiting the
`light-emitting diode chip 10 or electrostatic diode chip Z to be produced only by a method of bonding with a silver adhesive agent which
`may be fused at a low temperature; therefore, it may result in issues of reduced production capacity and increased forward voltage
`(VF-Forward Voltage) in the production process.
`[0009]
`In addition, the step of filling the reflection cup 91 having a reflector being disposed on the surface of thermoplastic injection material
`with the light-transmitting epoxy resin 15 will lead to an issue of short-circuiting the electrodes of the light-emitting diode element gold
`wires.
`[Disclosure of the Invention]
`[Problem to Be Solved by the Invention]
`[0010]
`Therefore the present invention is to resolve the various issues including being easily impacted by the electrostatic discharge impact of a
`conventional InGaN/GaN-based light-emitting diode element, and, in the event of electrostatic discharge impact having thousands of volts,
`it may drastically reduce the defect rate due to an electrostatic discharge impact without directly impacting the InGaN/GaN-based chip as
`well as enable the production process by the high-temperature eutectic bonding method without bonding the InGaN/GaN-based
`light-emitting chip using a silver resin (epoxy); as a result, it increases the production capacity and reduces the forward voltage while
`providing a high luminance light-emitting diode having a protection function against an electrostatic discharge impact without interfering
`with the light emitted from the light-emitting diode chip to increase the light-emitting diode luminance.
`[0011]
`An object of the present invention is to provide a hi