||11||||||||||||||||||||||||||l||||||||||||||||||||||||||||||||||||||||||||
`
`USOO7078732B1
`
`{12} United States Patent
`US 7,078,732 Bl
`Reeh et a1.
`(45) Date of Patent:
`*Jul. 18, 2006
`
`(10) Patent No.:
`
`(54
`
`[75)
`
`1.[G11'l'-R‘-\I)IA'1'I.\'GSEMICONDUC‘I‘OR
`(.‘OMPONEN'I‘ WITH .-\ LUMINESCENCE
`CONVERSION ELEMENT
`
`’9‘
`
`2.192.869 :1
`3.312.851 A
`3.316.109 A
`3.440.471 A
`
`3-1941] Pearce
`4:196? Flowers el :11.
`41967 Rimbach
`4-1969 Baczewski et al.
`
`313484
`
`Inventors: Ulrike Reeh. Miinchen (1)15); Klaus
`lliilin. 'I‘aulkirchen (1)133): Norbert
`Stath. Regensburg (1)11): Gfinter Waitl.
`Regeneburg (Di-L): Peter Sehlotter.
`Freiburg (DE): Jiirgen Schneider.
`Kirchmrten (1)15): Ralf Schmidt.
`Viirstetten (DH)
`
`(Continued)
`
`FOREIGN l’fll'liN'l‘ 1'JC)("1_1M1.'EN'1‘S
`
`BF
`DF.
`DE
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`1 007 825
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`101970
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`(73) Assignee: Osram GmIJH (1)1?)
`
`( * ) Notice:
`
`Subject to any disclaimer. the term ot‘lhis
`patent
`is extended or adjusted under 35
`U.S.(T. 154th) by t} clays.
`
`This patent is subject to a terminal dis—
`claimer.
`
`(2]) Appl. No: {191221.789
`
`(22)
`
`Filed:
`
`Dec. 28. 1998
`
`Related U.S. Application Data
`
`J.
`('l
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`'onlinuationo a matron. o.
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`Foreign Application Priority Data
`(30]
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`(1313)
`......................................... 196 25 622
`
`Sep. 20. 1996
`(D15)
`196 38 66?
`
`(51)
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`1101!. 33/130
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`(2006.01)
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`{52) U.S. (fl.
`
`257198: 257189
`
`(58)
`
`(56)
`
`Field of Classification Search
`
`257189.
`257198
`See application 1i [e for complete search history.
`
`References Cited
`l’A'l‘liN'I” |)O(‘UMiiN'I'S
`
`U.S.
`
`(Continued)
`
`01'! 113R 1’11131.I(‘.-\'1‘10NS
`
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`
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`
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`
`(57)
`
`ABS'I‘RAC'I‘
`
`'l'he light-radiating semiconductor component has it
`reldiation-emilling semiconductor body and a luminescence
`conversion element. The semiconductor body emits radia-
`tion in the ultraviolet. blue zindfor green spectral region and
`the luminescence conversion element converts a portion ol‘
`the radiation into radiation of a longer wavelength. This
`makes it possible to produce light—emitting diodes which
`radiate polyehromatic light.
`in particular white light. with
`only a single light-emitting semiconductor body. A particu-
`larly preferred luminescence conversion dye is YA('1:("e.
`
`2.096.693 A ’3 101937 (fox
`
`313485
`
`33 Claims, 6 Drawing Sheets
`
`
`
`TCL 1020, Page 1
`LOWES 1020, Page 1
`
`LOWES 1020, Page 1
`
`

`

`US 7,078,732 B1
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`313-485
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`3307103
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`
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`313-487
`357.573
`
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`_
`7’1959 GWEN 0‘ 31-
`1453-604 A
`121969 VCI'I‘I‘IClllcn
`3.483.415 .-'\
`551970 Amans ........................ 2573-1"?
`3.510.732 A
`9’19"“) P0115751 41-
`1529200 A
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`3565-815 9
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`353-598 A
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`3.593.055 A
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`1151971 Singh
`3921-340 A
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`1654-453 A
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`911972 Pinnow
`3.691.482 A
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`3.699.478 A
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`3322-315 A
`711974 Gmdkiewicz
`313.3511“
`3.83.456 A
`411975 Kan-3121211.
`3.932.831 A
`15-1975
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`121-1981
`(3101501111.
`4.479.886 A
`101-1984 Kasenga
`4.599.537 A
`71986 35111111111111
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`8- 1987 311.111.0101 at 111.
`4.707.635 A
`11-1987 '1'111cy1u1111 01111.
`4.710.674 A
`121987 5111111
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`4.727.283 A
`21988 1.111 14010111111111; at 111.
`4380352 A
`[051988 Angerstein cl 8|.
`4.816.369 A
`311989 3111151100 01 .11.
`4.818.434 A
`41989 Lindnmyer
`4.825.124 A
`411989 $111.11
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`6-1989 Lumbard 01 111.
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`711989 510111
`4.875.750 A
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`4.894.583 A
`11-1990
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`4.935.856 A
`6-1990 Dragoon
`5.003.181 A
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`5.019.746 A
`51991 Merg
`5.035.483 A
`71-1991
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`5.107.317 A
`471992 1110111116
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`5.196.763 A
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`5.202.777 A
`41993 51111111): 01 111.
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`5.256.725 A
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`5.424.573 A
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`5.432.358 A
`71995 Nelson 111 .11.
`5.471.113 A
`11-1995 Dc 13110110101 al.
`5.479.050 A
`121-1995
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`5.535.230 A
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`5.543.657 A
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`211997 13111111111101 111.
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`357.30
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`257-98
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`5.624.602 A
`5.635.110 A
`5.643.1174 A
`5.665393 A
`5.685.071 .-’\
`5.707.549 A
`5.147.832 A
`5.772.916 A
`5.788.881 A
`5.798.537 A
`5.813.752 A
`5.813.753 A
`5.847.507 A
`5.863.810 A
`5.905.771 A
`5.952.036 A
`5.959.316 A
`5.994.722 A
`5.998.925 A
`6.069.440 A
`6.180.029 131
`6.245.259 131
`6.576.930 131
`6.600.175 m
`6.613.247 Bl
`6.812.500 B1
`200150030326 Al
`20040016938 A1
`20050127385 Al
`2005-0161694 Al
`
`41997 1.0008 01 a].
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`711997
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`511998 Nakamura 01 .1I.
`611998 111111161111.
`351998 (71101111812101.
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`FOREIGN PA'I'ENT DOCUMEN‘I‘S
`2018354 1:“
`10-1970
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`46-7462
`12.1971
`47017684
`9-1972
`49-6962
`3'IFPT3
`46-39866
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`49-1221
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`49422292
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`50-43913
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`50-74875
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`51145288
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`52-009334
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`52-9334
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`111-1977
`53001180
`11978
`53400787
`91978
`54066093
`51979
`55-4898
`|:|98(l
`
`TCL 1020, Page 2
`LOWES 1020, Page 2
`
`LOWES 1020, Page 2
`
`

`

`US 7,078,732 B1
`
`Page 3
`
`JP
`JP
`JP
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`61—240680
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`5 1998
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`YJAI_.O]1—C‘e3+“_. Applied Physics Letter. vol. 11. No. 2. Jul.
`15. 1967. pp. 53.54.
`White LED Lamp by Nichia. copy ot‘a Japanese Newspaper.
`dated Sep. 1996.
`Mary V". Iloll‘man: “littpmved color rendition in high pres-
`sure mercury vapor lamps“. Journal of 1158. Jan. 1997. pp.
`89 91.
`
`13. M. J. Smets: “Phosphors Based [)1] Rare Earths. A New
`lira in Fluorescent Lighting". Materials ('hemistry and
`Physics. 16 (1987). pp. 283—299.
`Frank Mollmer et al.: “Siemens SMT—"1‘OPI..F.1')
`
`liir die
`
`Oberllachelunontagc". [Siemens SMT TOPIJEDS for sur-
`face mounting]. Siemens Components 29. 1991. No. 4. pp.
`147—149.
`
`Summons and Complaint re: Citizen Electronics Company.
`Ltd. v. ()sram (imbll and ()sram [)pto Semiconductors
`(:imbll.
`
`Summons and Complaint re: Citizen Electronics Company.
`1.td. v. Osram (.imbI-I and Opto Semiconductors Cimbll.
`Oliice Action lirom the Korean Patent ()llicc dated Aug. 25.
`315.
`
`for Surface
`Mollmer et a].. “Siemens SM'I' TOP 1.111)
`Mounting". Siemens Conrponents. Bd. 26. No. 6. pp.
`193—196 (1991).
`
`Translation of Japanese ()Ilice Action Dated Jun. 2. 2005.
`Notice of European Opposition Dated Feb. 28. 2005.
`Six European Search Reports dated May 25. 2005.
`tn the Matter offl'ertain Light tz‘tm‘tting Diodes and Prod—
`ucts Containing Same.
`Investigation No. 337—TA—512.
`“Notice of Commision Final l.)etermination of No Violation
`of Section 337 as to One Patent and Determination to
`Remand the Investigation as (.‘enain Other Patents.“ Dated
`Aug. 10. 2005.
`In the Matter ofCertain Light—Emitting Diodes and Pmd~
`nets Containing Same, Investigation No. 337 TA 5 12. “Ini-
`tial Determination on Violation o 1' Section 337 and Recom-
`
`mended Determination on Remedy and Bond." [Public
`Version). Dated May 10. 2005.
`In the Matter of Certain Light Emitting Diodes and Prod—
`nets Containing Same.
`Investigation No. 337 'I‘A 512.
`“Conunission Opinion." {Public Version). Dated Aug. 29.
`2005.
`
`"‘ cited by examiner
`
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`US. Patent
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`Jul. 18,2006
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`Sheet 1 of6
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`US. Patent
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`Jul. 18,2006
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`Sheet 2 of6
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`US 7,078,732 Bl
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`FIG 4
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`US. Patent
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`Jul. 18,2006
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`Sheet 3 of6
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`US 7,078,732 Bl
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`FIGS
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`US. Patent
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`Jul. 18,2006
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`Sheet 4 of6
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`US 7,078,732 Bl
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`Rel.Intensity
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`FIE-37
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`400
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`450
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`500
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`550
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`500
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`550
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`l[nm]
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`Rel.
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`intensity
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`400
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`500
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`600
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`Rel.intensity
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`400
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`450
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`500
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`550
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`500
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`Rel
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`Intensity
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`US. Patent
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`Jul. 13 2006
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`Sheet 6 of6
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`FIG13
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`5 34141
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`Yggawy§
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`l
`LlGHT—RADIATING SEMICONDUCTOR
`COMPONENT WITH A LUMINESCENCE
`('TONVERSION ELEMENT
`
`CROSS-RIil-‘liRlENCli TO Rlil../\'l'l.il)
`Al’l’l.l(.‘.-’\'I‘I()N
`
`This is a continuation of copending International Appli-
`cation I’(’I‘;‘Dli97l0]337. filed Jun. 26. [997. which desig-
`nated the United States.
`
`1U
`
`BACKGROUND OF THE INVENTION
`
`Field of the Invention
`
`The invention relates to a light—radiating semiconductor
`component with a semiconductor body that emits electro-
`magnetic radiation during operation of the semiconductor
`component. The component has at least one tirst and at least
`one second electrical terminal. which are electrically cou-
`uected to the semiconductor body. The component Further
`ltas a ltttninescence conversion element with at least one
`luminescent material.
`
`A semiconductor component o l‘ that type is disclosed. for
`example. in (ierman published patent application DI". 38 04
`293. There. an arrangement having an electroluminescent or -
`laser diode in which the entire emission spectrutn radiated
`by the diode is shifted toward greater wavelengths by tneans
`ol‘ a plastic element
`that
`is
`treated with a fluorescent.
`light—convening organic dye. The light radiated by the
`arrangement consequently has a dill'erent color from the
`light emitted by the light-emitting diode. Depending on the
`nature of the dye added to the plastic. light-emitting diode
`arrangements which emit
`light
`in difl‘erent colors can be
`produced using on‘ and the same type ol‘ light-emitting
`diode.
`
`3n
`
`German published patent application DIE 23 47 289
`discloses an infrared (IR) solid-state lamp in which lutni—
`ttescent material is applied on the edge ol'an IR diode and
`converts the IR radiation that is radiated there into visible
`
`light. The aim ol‘this measure is. for supervisory purposes.
`to convert a smallest possible part ol‘ the [R radiation emitted
`by the diode into visible light
`in conjunction with the
`smallest possible rcdttetion o lithe intensity 0 l‘ the emitted IR
`radiation.
`
`Furthermore. [European patent application lfil’ 486 052
`discloses a light-emitting diode in which at least one semi-
`conductor photoluminescent layer is arranged between the
`substrate and an active electroluminescent layer. The semi—
`conductor photoluminescent layer converts the light o la lirst
`wavelength range
`the light emitted by the active layer in
`the direction ol'tlie substrate—into light ot‘a second wave—
`length range. with the result
`that. altogether.
`the light-
`emitting diode emits light of difl‘crent wavelength ranges.
`In many potential areas ol‘ application for light-emitting
`diodes. such as. for example. in display elements in motor
`vehicle dashboards. lighting in aircraii attd atttomobiles. and
`in lull-color I.lil) displays. there is incr ‘asingly a demand
`for light-emitting diode arrangements with which polychro-
`tnatic light. in particular white light. can be produced.
`Japanese patent application JP-O? l't'6 794-A describes a
`white-Iighl-etuitting. planar light source in which two blue-
`light—emitting diodes are arranged at an end ot'a transparent
`plate. The diodes emit light into the transparent plate. The
`transparent plate is coated with a fluorescent substance on
`one ol‘ the two mutually opposite main surfaces. The fluo-
`rescent substance emits light when it is excited by the blue
`
`4“
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`45
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`'JI 'J.
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`tilt
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`light of the diodes. The light emitted by the fluorescent
`substance has a dillerent wavelength from that ol‘ the bltte
`light emitted by the diodes. In that prior art component. it is
`particularly dillicttlt
`to apply the fluorescent substance in
`such a tnanner that the light source radiates homogeneous
`white light. l-‘urthermore. the question ol‘ reproducibility in
`mass production also poses major problems because even
`slight fluctuations in the thickness ol'the fluorescent layer.
`for example on account ol‘ unevenness ol' the surface of the
`transparent plate. cause a change in the shade ol'wltite of the
`radiated light.
`SUMMARY OF THE INVENTION
`
`is accordingly an object of the invention to provide a
`It
`light—radiating semiconductor component. which overcomes
`the above-mentioned disadvantages ofthc hereto lore-known
`devices and methods ol‘this general type itttd which radiates
`ht‘nnogeneous polychromatic light and ensures technically
`simple mass production with component characteristics that
`are reproducible to the greatest possible extent.
`With the foregoing and other objects in view there is
`provided. in accordance with the invention. a light—radiating
`semiconductor component. comprising:
`a semiconductor body etnitting electromagnetic radiation
`during an operation of the sernicondttctor component. the
`semiconductor body having a semiconductor layer sequence
`suitable for emitting electromagnetic radiation o l‘ a first
`wavelength range selected from a spectral region consisting
`of ultraviolet. blue. and green;
`a first electrical terminal and a second electrical lemiinal
`
`each electrically conductivcly connected to the semiconduc-
`tor body: and
`least one
`a luminescence cottversion element with at
`lttminescent material. the luminescence conversion element
`
`converting a radiation originating in the first wavelength
`range into radiation ol‘a second wavelength range dill'crent
`from the first wavelength reulge. such that the semiconductor
`component emits polychmmatic radiation comprising radia-
`tion o f the first wavelength range and radiation o l‘thc second
`wavelength range.
`The invention provides for the radiation—emitting semi—
`conductor body to have a layer sequence.
`in particular a
`layer sequence with an active semiconductor layer made ol‘
`(ia_\.ln]__‘.l\l or (izt_\Al1__\.N. which emits an electromagnetic
`radiation of a first wavelength range from the ultraviolet.
`blue andt‘or green spectral region during operation ol' the
`SCIHTCOI'IdHClOI' Ct'll'l'll'JOI'IlfI'll.
`'l‘l'IC luminescence COI‘IVCI’SiOfl
`element converts part of the radiation originating from the
`first wavelength range into radiation ot'a second wavelength
`range.
`in such a way that
`the semiconductor component
`emits polyehromatic radiation. in particular polychrornatic
`light. comprising radiation olthe first wavelength range and
`radiation of the second wavelength range. This tneans. for
`example.
`that
`the luminescence conversion element spec-
`trally selectively absorbs part of the radiation emitted by the
`semiconductor body. preferably only over a spectral subre—
`gion of the first wavelength range. and emits it in the region
`of longer wavelength (in the second wavelength range).
`Preferably. the radiation emitted by the semiconductor body
`has a relative intensity maximum at a wavelength } E520
`um and the wavelength range which is spectral ly selectively
`absorbed by the lttminescence conversion element lies out—
`side this intensity maximum.
`In accordance with an added feature of the invention. the
`luminescence conversion element converts radiation of the
`
`first wavelength range into radiation o [a plurality of second
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`wavelength ranges from mutually diflereitt spectral
`subregions. such that
`the semiconductor component emits
`polychromatic radiation comprising radiation of the first
`wavelength range and radiation of the plurality of second
`wavelength ranges. In other words. the invention advanta-
`geously makes it possible also to convert a number (one or
`more) of first spectral subregions originating from the first
`wavelength rattge into a plurality of second wavelength
`ranges. As a result.
`it
`is possible to produce diverse color
`mixtures zmd color tempemturcs.
`The semiconductor component according to the invention
`has the particular advantage that the wavelength spectrum
`generated by way of luminescence conversion and hence the
`color of the radiated light do not depend on the level of the
`operating current intensity through the semiconductor body.
`This has great significance particularly when the ambient
`temperature of the semiconductor component and.
`consequently. as is known. also the operating current intcn~
`sity greatly lluctuate. [Especially light-emitting diodes hav-
`ing a semiconductor body based on 0th are very sensitive
`in this respect.
`In addition. the semiconductor component according to
`the invention requires only a single driving voltage and. as
`a result. also only a single driving circuit configuration.
`whereby the outlay on devices for the driving circuit of tlte
`semiconductor component can be kept very low.
`In accordance with an additional feature of the invention.
`the semiconductor component has a defined main radiating
`direction. and the luminescence conversion element is dis-
`posed substantially downstreatn of the semiconductor body
`in the main radiating direction of the semiconductor com-
`ponent.
`In accordzmce with another feature of the invention. the
`luminescence conversion element is at least one ltnnines—
`
`cence conversion layer disposed in a vicinity of the semi—
`conductor body. In this particularly preferred embodiment of
`the invention. a partially transparent luminescence conver-
`sion layer. that is to say one which is partially transparent to
`the radiation emitted by the radiation-emitting semiconduc-
`tor body. is provided as the luminescence conversion ele—
`tnent above or on the semiconductor body. In order to ensure
`a uniform color of the radiated light.
`the luminescence
`conversion layer is advantageously designed in such a way
`that
`it has a constant
`thickness throughout. This has the
`particular advantage that the path length ol'the light radiated
`by the semiconductor body through the luminescence con-
`version layer is virtually constant foral] radiation directions.
`The efl'eet that can be achieved as a result of this is that the
`
`semiconductor component radiates light of the same color in
`all directions. A further particular advantage of a semicon-
`ductor component according to the invention in accordance
`with this development consists in the [act that a high degree
`oi'repmducibility can be obtained in a simple manner. which
`is of considerable significance for ellicicnt mass production.
`A resist or resin layer treated with lttntinescent material may
`be provided. for example. as the lutninescenee conversion
`layer.
`In accordance with a further feature of the invention. the
`luminescence conversion element is a luminescence conver-
`
`sion encapsulation enclosing at least a part ofthe semicon-
`ductor body and partial
`regions o f the first and second
`electrical terminals. The eneapsttlation is partially transpar—
`ent and encloses at least part ofthe semiconductor body (and
`possibly partial regions of the electrical terminals] and can
`simultaneously be utilized as component encapsulation
`(housing). The advantage of a semiconductor component in
`
`5
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`65
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`accordance with this embodiment consists essentially in the
`fact that conventional production lines used for the produc-
`tion of conventional
`light-emitting diodes {for example
`radial light-emitting diodes) can be utilized for its produc—
`tion. The material of the luminescence conversion encapsu-
`lation is used for the component encapsulation instead ofthe
`transparent plastic which is used for this purpose in con—
`ventional light—emitting diodes.
`In timber advantageous embodiments of the semiconduc-
`tor component according to the invention and of the two
`preferred embodiments mentioned above. the luminescence
`conversion layer or the luminescence conversion encapsu-
`lation is composed of a transparent material. for example
`plastic. preferably epoxy resin. which is provided with at
`least one luminescent material (examples ol'preferred plas—
`tics and luminescettt materials will be found further below).
`In this way. it is possible to prodttcc luminescence conver-
`sion elements in a particularly cost-ellective manner.
`Specifically. the requisite process steps can be integrated in
`conventional production lines for light-emitting diodes with
`no major outlay.
`in accordance with again an added feature of the
`invention.
`the second wavelength range includes wave
`lengths at least some of which are longer titan wavelengths
`of the first wavelength range.
`In accordance with again an additional feature of the
`invention. the semiconductor body is adapted to emit ultra—
`violet
`radialion during operation of [he semiconductor
`component. and the luminescence conversion element con-
`verts at least a port ion of the ultraviolet radiation into visible
`light.
`in accordance with again another icature of the invention.
`the first wavelength range and the second wavelength range
`of the polychrotnatic radiation lie at least partially in mutt:—
`ally complementary-color spechal regions. and a combina-
`tion of radiation from the [irst and second wavelength rzmge
`results in white light.
`When the second spectral sttbregion ol' the first wave-
`length range and a second wavelength range are comple-
`mentary to one another.
`it
`is possible to produce
`polychromatic. in particular white. light from a single col—
`ored light source. in particular a ligltt—emitting diode having
`a single blue-light-radiating semiconductor body. In order.
`for example.
`to produce white light with a blue-light-
`emit‘ting semiconductor body. part o l‘ the radiation from the
`blue spectral region emitted by the semiconductor body is
`converted into the yellow spectral region. which is comple-
`mentarily colored with respect to blue. The color tempera—
`ture or color locus of the white light can in this case be
`varied by a suitable choice of the luminescence conversion
`element. in particular by a suitable choice of the luminescent
`material. its particle size and its concentration. Furthennore.
`these arrangements also advantageously afford the possibil-
`ity of using luminescent material mixtures. as a result of
`which. advantageously.
`the desired htle can be set very
`accurately. Likewise.
`it
`is possible to configure lttmines—
`cence conversion elements inhomogeneously. for example
`by means of inhomogeneous luminescent material distribu-
`tion. I.)illerent path lengths of the light through the lumi-
`nescence conversion eletnent can advantageously be com-
`pensated for as a result of this.
`feature of the
`furtlter
`In accordance with again a
`invention. the first wavelength range emitted by the semi—
`conductor body and two second wavelength ranges produce
`an additive color triad. such that white light is radiated by the
`semicondttctor component during operation thereof.
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`In a further preferred embodiment of the semiconductor
`component according to the invention.
`the luminescence
`conversion element or another constituent of a component
`encapsulation has. tor the purpose ol'eolor matching. one or
`more dyes which do not cifect wavelength conversion. For
`this purpose. it is possible to use the dyes which are used for
`the production of conventional light—emitting diodes. such
`as. for example. azo. anthmquinone or perinone dyes.
`In order to protect the lutninescence conversion eletnent
`against an excessively high radiation load. in an advanta-
`geous development or in the abovewmentioned preferred
`embodilncnts of the semiconductor component according to
`the inven