Shuji Nakamura Stephen Pearton ee
`Gerhard Fasol
`eee
`
`The Blue Laser-Diod
`
`
`
`The Complete Story
`
`Second Updated and Extended Edition
`With 256 Figures and 61 Tables
`
`
`
`Springer
`
`NICHIA EX2016
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`

`Stephen Pearton
`University of Florida
`Dept.of Materials Science and Engineering
`Rhines Hall, PO Box 116400
`Gainesville, FL 32611-6400
`USA
`e-mail: spear@mse.ufl.edu
`
`Shuji Nakamura
`Materials Dept.
`University of California
`Santa Barbara CA 93106
`USA
`e-mail: ishuji@engineering.ucsb.edu
`
`Gerhard Fasol
`
`Eurotechnology Japan Ltd.
`Parkwest Building uth Floor
`6-12-1 Nishi-Shinjuku
`Shinjuku-ku, Tokyo 160
`Japan
`e-mail: g.fasol@ieee.org
`
`ISBN 3-540-66505-6 Springer-Verlag Berlin Heidelberg New York
`ISBN 3-540-61590-3 ist Edition Springer-Verlag Berlin Heidelberg New York
`
`Library of Congress Cataloging-in-Publication Data appliedfor.
`Die Deutsche Bibliothek - CIP-Einheitsaufnahme
`Nakamura, Shuji:
`The blue laser diode : the complete story / Shuji Nakamura ; Stephen Pearton ; Gerhard Fasol. -
`2., updated and extended ed.. - Berlin ; Heidelberg ; New York ; Barcelona ; Hong Kong ; London ;
`Milan; Paris ; Singapore ; Tokyo : Springer, 2000 (Physics and astronomy) ISBN 3-540-66505-6
`
`This work is subject to copyright. All rights are reserved, whether the whole or part of the material
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`casting, reproduction on microfilm or in any other way, and storage in data banks. Duplication of
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`
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`a memberof BertelsmannSpringer Science+Business Media GmbH
`
`© Springer-Verlag Berlin Heidelberg 1997, 2000
`Printed in Germany
`
`The use of general descriptive names, registered names, trademarks, etc. in this publication does not
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`
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`Printed on acid-free paper
`SPIN: 10695409
`57/3144/mf
`
`543210
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` +
`t1
`'1
`
`
`
`1
`1
`(NH3-dissociates,- - -
`resulting atomic
`~---4--- +1hylydrogén passivates
`acceptors)
`|!
`
`T ' ’ ' 'Jee---basene ’ ' ' 1 1
`
`
`
`2.5 Key Steps in the Discovery
`
`1
`
`
`
`Fig. 2.3. For a long time it was
`thought impossible to obtain p-type
`GaN. Akasaki et al. demonstrated
`that p-type GaN can be obtained
`by electron beam annealing. Naka-
`murafinally elucidated why p-type
`GaN was never found before:
`re-
`searchers had always used animouia
`for annealing which dissociates dur-
`ing the thermal annealing, dissoci-
`ation of ammonia yields atomic hy-
`drogen which passivates the accep-
`tors (such passivation is of course
`highly undesirable for most device
`production in this case here)
`
`an
`
`m oO
`
`— Cu
`
`&
`e a
`
`we
`— oO
`
`
`
`Resistivity(Qcm)
`
`
`
`my
`
`1Q. }-----b----4B----}-----1----- q-----
`
`0
`
`200
`
`800
`600
`400
`Temperature (°C)
`
`1000
`
`— elucidation of the annealing process, and demonstration of p-type doping
`without electron beamirradiation by thermal annealing (Nakamuraet al..
`see Fig. 2.3)
`— two gas flow MOCVDtechnique (Nakamura)
`
`As research on the GaN group of materials is now rapidly scaled up at
`many laboratories throughout the world, it is expected that there will be
`rapid improvements in material quality. and possibly the development of
`alternative growth procedures.
`
`2.5.1 Research History of Shuji Nakamura and Selected Steps
`in the Development of the Commercial Blue GaN LED
`
`— 1971: Pankove (RCA, Princeton) demonstrates blue GaN metal-insulator-
`semiconductor LED
`— 1974: Pankove and Temple demoustrate cubic GaN
`— March 1979: Nakamuragraduates from Tokushnua University
`— April 1979: Nakamuraenters Nichia Chemical Industries
`~ 1979-1982: Nakamurarefines metallic galliumfor liquid phase epitaxy ap-
`plications and develops polycrystalline GaP
`— 1981: GaN MIS LED (10 milli-Candela) Akasaki and others at Matsushita
`(quantum efficiency =» 0.12%), first flip-chip type
`— 1982-1985: Nakamura develops polycrystalline and single crystal GaAs
`— 1985-1988: Nakamura develops crystal growth technology of GaAlAs for
`red and infra-red light emitting diodes by liquid phase epitaxy
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`16
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`2. Background
`
`— 1986: Akasaki grows high quality GaN using a-AIN buffer layers, Mizuta
`et al. grow cubic GaN
`— 1988: Akasaki discovers p-type conducting GaN using low energyelectron
`beamirradiation
`— March 1988-March 1989: Nakamura works as visiting research associate
`at
`the University of Florida (Professor Ramaswamy’s group)
`to learn
`MOCVD. Research on MOCVD growth of GaAs on Si
`~ April 1989: Nakamurabegins research towards blue LED
`— Sept. 1990: Nakamura develops new ‘two-flow’ MOCVD equipment for
`growth of high quality single crystal GaN layers
`— Feb. 1991: Nakamura grows high quality p-type GaN
`— 6 May 1991: Nakamura secretly publishes his first scientific article [Appl.
`Phys. Lett. Vol. 58, (1991) p. 1021] on his MOCVD equipment.
`— March 1991: Nakamura fabricates GaN pn-junction light emitting diode.
`confirms light emission
`— June 1991: 3M reports ZnSe-CdZnSe based blue semiconductorlaser
`— 1992: Akasaki demonstrates GaN based blue pn-junction LED (light out-
`put: 1.5 mWat room temperature, quantumefficiency: 1.5%)
`~ Feb. 1992: Nakamura begins to grow InGaN single crystal layers for the
`production of double heterostructures
`— June 1992: Nakamura successfully grows InGaN single crystal layers
`— Sept. 1992: Nakamura fabricates InGaN double heterojunction light emit-
`ting diode
`— Dec. 1992: Nakamura succeeds in fabrication of InGaN double heterojunc-
`tion light emitting diode with high ight output
`— Nov. 1993: Nakamura demonstrates 1 candela InGaN blue light emitting
`code product
`— Nov. 1993: Nichia announces couunercial blue InGaN LEDs
`~ May 1994: Nakamurademonstrates 2 candela InGaN blue green light emit-
`ting diode product
`— from 1994: Nichia employs 100 people in the commercial production of blue
`LEDs
`— Sept. 1995: Nichia announces commercial green InGaN based LEDs
`— Jan. 1996: Nakamura reports pulsed blue InGaN injection laser at room
`temperature
`— 1996: Nichia sells several million blue indiwn gallium nitride LEDs per
`month
`— Noy. 1996: Nakamura announces the first CW(continuous wave) blue gal-
`liumnitride based injection laser at room temperature
`— 1991-1999: Nakamura improves laser lifetime through improved layer de-
`sign and growth (ELOG)
`~ 1999: Nichia announces sample shipment of violet InGaN laser diodes
`— 1999: Nichia announces commercial violet InGaN laser diodes
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