(12) United States Patent
`Reeh et a].
`
`(10) Patent N0.:
`(45) Date of Patent:
`
`US 7,078,732 B1
`*Jul. 18, 2006
`
`US007078732B1
`
`(54) LIGHT-RADIATING SEMICONDUCTOR
`COMPONENT WITH A LUMINESCENCE
`CONVERSION ELEMENT
`
`(75) Inventors: Ulrike Reeh, Mi'mchen (DE); Klaus
`Hiihn, Tauikirchen (DE); Norbert
`Stath, Regensburg (DE); Giinter Waitl,
`Regensburg (DE); Peter Schlotter,
`Freiburg (DE); Jiirgen Schneider,
`KirchZarten
`Schmidt,
`Vorstetten (DE)
`
`(73) Ass1gnee: Osram GmbH (DE)
`( * ) Notice:
`Subject to any disclaimer, the term of this
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 0 days.
`
`2,192,869 A * 3/1940 Pearce ...................... .. 313/485
`3,312,851 A
`4/ 1967 Flowers 6t 91
`3,316,109 A
`4/1967 Rimbach
`3,440,471 A
`4/1969 Baczewski et a1.
`_
`(comlnued)
`
`BE
`DE
`DE
`
`FOREIGN PATENT DOCUMENTS
`1 007 825
`“M995
`1915290
`10/1969
`2018353 C
`10/1970
`
`(Continued)
`
`OTHER PUBLICATIONS
`
`This patent is subject to a terminal dis-
`Clalmer'
`
`Jour Solid State Chemistry “White Light Emitting Glasses”
`C1180 e1 81 pp 17*29 1991.*
`Sato et a1 “FulliColor Diode” Jpn. J. Appl. Phys. vol. 35
`
`(22) Filed;
`
`Dec_ 28, 1998
`
`Related US. Application Data
`
`Robbins et al., Single Crystal Y3A15012: Tb Phosphor
`Produced by Ion Implantation:, Journal oflhe Electrochemi
`cal Society, vol. 129, No. 4, pp. 816820.
`
`(63) Continuation of application No. PCT/DE97/01337, ?led on
`Jun‘ 26, 1997‘
`Foreign Application Priority Data
`
`(30)
`
`
`
`Jun. 26, 1996 Sep. 20, 1996
`
`
`
`....................................... .. 196 25 622 (DE) ....................................... .. 196 38 667
`
`51
`I t. Cl.
`(
`) 30111 33/00
`
`(200601)
`
`(52) us. Cl. .......................................... .. 257/98; 257/89
`
`(58) Field of Classi?cation Search ................. .. 257/89,
`257/98
`See application ?le fOr Complete Search hiSIOI'Y-
`.
`References Clted
`U.S. PATENT DOCUMENTS
`
`(56)
`
`-
`(Contmued)
`
`Primary Examinerilerome Jackson
`Attorney) Agent) or
`& Richardson
`
`(57)
`
`ABSTRACT
`
`The light-radiating semiconductor component has a
`radlation-emittmg semlconductor body and a luminescence
`conversion element. The semiconductor body emits radia
`tion in the ultraviolet, blue and/9r green Spectral region and
`the luminescence conversion element converts a portion of
`the radiation into radiation of a longer Wavelength, This
`makes it possible to produce light-emitting diodes Which
`radiate polychromatic light, in particular White light, With
`only a single light-emitting semiconductor body. A particu
`larly preferred luminescence conversion dye is YAGzCe.
`
`2,096,693 A * 10/1937 CoX ......................... .. 313/485
`
`33 Claims, 6 Drawing Sheets
`
`TCL 1020, Page 1
`
`

`

`US 7,078,732 B1
`Page 2
`
`US. PATENT DOCUMENTS
`
`7/1969 Geusic et a1~
`3,453,604 A
`3,483,416 A 12/1969 Vermeulen
`3,510,732 A
`5/1970 Amans ...................... .. 257/77
`3,529,200 A
`9/1970 Pottér et 31
`3,565,815 A
`2/1971 Chnsty
`3,573,568 A
`4/1971 Siege-1
`3,593,055 A
`7/1971 Geusic ...................... .. 257/98
`3,602,758 A
`8/1971 Thornton ------------------ -- 313/485
`36211340 A 11/1971 Singl}
`3,654,463 A
`4/1972 Geusl? _
`3,659,136 A
`4/1972 Grodklewlcz
`3,691,482 A
`9/1972 PinnoW .................... .. 330/108
`3,699,478 A 10/1972 PiImOW eta1~
`3,700,479 A 10/1972 Arents
`_
`3,715,611 A
`2/1973 De Mésqulta er 91-
`3,740,616 A
`6/1973 Suzukl et 31
`3,742,277 A
`6/1973 Peters
`3,742,833 A
`7/1973 Sew?“ er a1~
`3,743,833 A
`7/1973 Mantle eta1~
`3,774,086 A 11/1973 Vmcent, 11
`3,787,684 A
`V1974 Isenberg
`3,819,974 A
`6/1974 $teVeI1_S°n_eta1~
`3,822,215 A
`7/1974 Grodklewlcz
`3,875,456 A
`4/1975 Kano et a1. ............... .. 313/501
`3,932,881 A
`1/1976 Mi-ta ......................... .. 257/98
`39761877 A
`8/1976 Thlllays
`4,093,890 A
`6/1978 Vernet et a1~
`4,139,657 A
`2/1979 Wamnabe
`4,203,792 A
`5/1980 Thompson
`4,262,206 A
`4/1981 vlehmann
`4,298,820 A 11/1981 BOIlgerS 6161. ........... .. 313/463
`4,307,297 A 12/1981 GIOIT 6161.
`4,479,886 A 10/1984 KaSeIlga ................ .. 252/301.4
`4,599,537 A
`7/1986 Y61116s11116
`4,684,592 A
`8/1987 M61s11116 6161.
`4,707,635 A 11/1987 T616y61116 6161.
`4,710,674 A 12/1987 s1g61
`4,716,337 A 12/1987 111111166 6161.
`313/487
`4,727,283 A
`2/1988 V311 Kemenadeet 61.
`4,780,752 A 10/1988 A11g61s16111 6161. ......... .. 357/72
`4,816,369 A
`3/1989 M61s11116 6161.
`4,818,434 A
`4/1989 L111611116y61
`4,825,124 A
`4/1989 s1g61
`4,843,280 A
`6/1989 Lumbafd 6161.
`4,851,695 A
`7/1989 $16111
`4,875,750 A 10/1989 $11661 6161.
`4,894,583 A
`1/1990 B611s116ss61 6161.
`4,935,856 A
`6/1990 D16g6611
`5,003,181 A
`3/1991 M61161116161.
`5,019,746 A
`5/1991 Merg
`5,035,483 A
`7/1991 w61116161.
`.. 357/30
`5,107,317 A
`4/1992 T616s611 ..
`5,126,214 A
`6/1992 T61611111 ................... .. 313/503
`5,196,763 A
`3/1993 Y611g 6161.
`5,202,777 A
`4/1993 s111Z1y 6161. ............... .. 357/50
`RE34,254 E
`5/1993 D16g6611
`5,208,462 A
`5/1993 001111161 6161.
`5,256,725 A 10/1993 T6166166161.
`5,294,897 A
`3/1994 N6161116161.
`5,379,186 A
`1/1995 (101C161 61.
`5,417,886 A
`5/1995 T6161w6 6161.
`5,424,573 A
`6/1995 K616 6161.
`5,432,358 A
`7/1995 Nelson 6161.
`5,471,113 A 11/1995 D6 B66161 6161.
`5,479,050 A 12/1995 P11161616 6161.
`5,535,230 A
`7/1996 Abe .......................... .. 257/98
`5,543,657 A
`8/1996 D1f16116161f616161.
`5,578,839 A 11/1996 N61611111166161.
`5,600,202 A
`2/1997 Y61116616 6161.
`5,607,621 A
`3/1997 IShihaIa 6161.
`
`4/1997 LenoX et a1.
`5,624,602 A
`6/1997 (3161161116 6161.
`5,635,110 A
`7/1997 BI'llIlO 6161.
`5,643,674 A
`9/1997 Anders
`5,665,793 A
`5,685,071 A l1/l997 Gates, Jr‘ et 31‘
`5,707,549 A
`1/1998 M61s111iy6 6161.
`5,747,832 A
`5/1998 N61611111166161.
`5,772,916 A
`6/1998 J6111i16161.
`5,788,881 A
`8/1998 Chadha et 31‘
`5,798,537 A
`8/1998 Ni116 ........................ .. 257/103
`5,813,752 A
`9/1998 $111g616161.
`5,813,753 A
`9/1998 V1i611s6161.
`5,847,507 A 12/1998 B111161w611116161. ..... .. 313/512
`5,863,810 A
`1/1999 Kaldenberg
`5,906,771 A
`5/1999 W611111s 6161.
`5,952,036 A
`9/1999 T661611 6161.
`5,959,316 A * 9/1999 L6w61y ..................... .. 257/98
`5,994,722 A 11/1999 Av61b6616161.
`5,998,925 A 12/1999 s11i1111Z116161.
`6,069,440 A
`5/2000 5111111611 6161. ........... .. 313/486
`6,180,029 B1
`1/2001 H6111p61611-s1111111 6161.
`6,245,259 B1
`6/2001 HOhIl 6161. .......... .. 252/301.36
`6,576,930 B1
`6/2003 R66116161.
`6,600,175 B1
`7/2003 B61616 6161. ............. .. 257/100
`6,613,247 B1
`9/2003 HOhIl 6161. .......... .. 252/301.36
`6,812,500 B1
`11/2004 Reeh et a1‘
`2001/0030326 A1 100001 Reeh et a1‘
`2004/0016938 A1
`1/2004 B61616 6161. ............. .. 257/100
`2005/0127385 A1
`6/2005 R66116161.
`2005/0161694 A1
`7/2005 R66116161.
`
`FOREIGN PATENT DOCUMENTS
`
`DE
`DE
`DE
`DE
`DE
`DE
`DE
`EP
`EP
`EP
`EP
`EP
`EP
`FR
`FR
`FR
`FR
`GB
`GB
`GB
`GB
`GB
`GB
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`
`2018354 (3
`2059909
`718442
`2 347 289
`33 15 675 A1
`38 04 293 A1
`90 13 615
`0039017 B1
`0333162
`0 387 715
`0 486 052 A1
`97 933 047.9
`0936682
`2004989
`2043403
`2044727
`2073134
`1263185
`1317731
`1317732
`1332462
`2000173
`2149416
`46-7462
`47017684
`49-6962
`46-39866
`49-1221
`49122292
`50-43913
`50-74875
`51145288
`52009334
`52-9334
`52-40959
`53001180
`53-100787
`54066093
`55-4898
`
`10/1970
`6/1971
`12/1971
`4/1974
`11/1983
`8/1989
`1/1991
`8/1985
`9/1989
`9/1990
`5/1992
`1/1999
`8/1999
`12/1969
`2/1971
`2/1971
`9/1971
`2/1972
`5/1973
`5/1973
`10/1973
`1/1979
`6/1985
`12/1971
`9/1972
`3/1973
`6/1973
`1/1974
`11/1974
`4/1975
`6/1975
`12/1976
`1/1977
`2/1977
`10/1977
`1/1978
`9/1978
`5/1979
`1/1980
`
`TCL 1020, Page 2
`
`

`

`US 7,078,732 B1
`Page 3
`
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`JP
`WO
`WO
`WO
`
`56-005884
`58-043584
`61-240680
`60090680
`61-248839
`62-20237
`62201989
`2-91980
`01175103
`01-179471
`01260707
`02011694
`2080970
`03220286
`03287690
`4110236
`04 063 162
`04137570
`4-175265
`5-38926
`5-152609
`05315652
`05315653
`05315624
`5-335624
`05347432
`6013075
`6017130
`06053554
`6-69546
`06076754
`6085314
`06 104491
`06163988
`06204570
`6-208845
`06306356
`7-99345
`7-42152
`7-176794
`7-193281
`07-292354
`8-7614
`08-007614
`8007614
`08-032120
`00864860
`08-096958
`198585/1996
`244339/1996
`245381/1996
`359004/1996
`09 027642
`09-028642
`9-73807
`081010/1997
`10 012925
`10-242513
`02-927279
`11-220174
`96/23030
`97/48138
`98/05078
`
`1/1981
`3/1983
`10/1986
`11/1986
`11/1986
`1/1987
`9/1987
`9/1988
`7/1989
`7/1989
`10/1989
`1/1990
`3/1990
`9/1991
`12/1991
`4/1992
`5/1992
`5/1992
`6/1992
`5/1993
`* 6/1993
`11/1993
`11/1993
`12/1993
`12/1993
`12/1993
`1/1994
`1/1994
`2/1994
`3/1994
`3/1994
`3/1994
`4/1994
`6/1994
`7/1994
`7/1994
`11/1994
`4/1995
`7/1995
`7/1995
`7/1995
`7/1995
`1/1996
`1/1996
`1/1996
`2/1996
`3/1996
`4/1996
`7/1996
`9/1996
`9/1996
`12/1996
`1/1997
`2/1997
`3/1997
`3/1997
`1/1998
`9/1998
`7/1999
`8/1999
`8/1996
`12/1997
`5/1998
`
`OTHER PUBLICATIONS
`
`Poort et al., “Optical properties of Eu2+iactivated orthosili
`cates and orthophosphates” Journal of Alloys and Com
`pounds, vol. 260, No. 142, pp. 93497 (Sep. 12, 1997).
`Japanese Patent Abstract 08007614 (Yoshinori), dated Jan.
`12, 1 996.
`
`English Translation of Proceedings of 264th Institute of
`Phosphor Society, “Development and Application of high
`bright White LED Lamps”, Nov. 29, 1996, pp. 5414.
`Journal of the Electrochemical Society, SolidiState Science
`and Technology, “Preparation of Y3Al5Ol2 Based Phosphor
`Powders”, Feb. 1987, pp. 4934498.
`Chao et al., “White Light Emitting Glass”, Jour. Solid State
`Chemistry, p. 17429.
`Nakamura, SPIE, “Present performance of InGaN based
`blue/green/yelloW LEDS”, vol. 3002, 1997, pp. 26435.
`A Dictionary of Metallurgy, p. 9, 1958.
`Japanese Internet Literature, “Preparing NearlyiSpherical
`Aluminate Phosphors of Uniform SiZe”.
`Course of Lectures: Fundamental and Application of Color
`Image Engineering, No. 5, Television Gakkaishi (The Jour
`nal of the Institute of Television Engineers of Japan), vol. 47,
`1993, p. 7534764.
`R.W.G. Hunt, “Revised ColouriAppearance Model for
`Related and Unrelated Colours”, Color Research and Appli
`cation, vol. 14, 1991 p. 1464165.
`Yoshinobu Nayatani, “Revision of the Chroma and Hue
`Scaled of a Nonlinear ColoriAppearance Model”, Color
`Research and Application, vol. 20, 1995, p. 1434155.
`Mitsuo Ikeda et al. “Equivalent Lightness of Colored
`Objects at Illuminances from the Scotopic to the Photopic
`Level”, Color Research and Application, vol. 14, 1989, p.
`1984206.
`Mitsuo Ikeda et al., “Equivalent Lightness of Colored
`Objects of Equal Munsell Chroma and of Equal Munsell
`Value at Various Illuminances”, Color Research and Appli
`cation, vol. 16, 1991, p. 72480.
`Hiroyuki Shinoda et al., “CategoriZed Color Space on CRT
`in the Aperture and the Surface Color Mode”, Color
`Research and Application, vol. 18, 1993, p. 326433.
`Change of Color Conspicuity for Various Illuminance Lev
`els Effects of the Purkuinje shift, Shomei Gakkaishi (Journal
`of the Illuminating Engineering Institute of Japan, vol. 17,
`1987, p. 6124617.
`Japanese Journal of Applied Physics, Part 2, vol. 31, No.
`10B, 1992, p. Ll457iLl459.
`Philips Journal of Research, vol. 36, No. 1, 1981, p. 15430.
`Translation of JP 48439866, May 18, 1973, Japan.
`Translation of JP 640009, Aug. 19, 1994, Japan.
`Translation of JP 5450611, Jul. 2, 1993, Japan.
`Translation of JP 5472553, Oct. 5, 1993, Japan.
`Excerpt from Nikkei Sangyo Shimbun; Sep. 13, 1996.
`Translation of “AP”.
`English Translation of Japanese 01175103 A, Jul. 11, 1989.
`English Translation of Japanese 01260707 A, Oct. 18, 1989.
`Phosphor Handbook, English Translation of (BAT).
`“Phosphor Handbook”, Ohm 1987, pp. 1724174, 1884189,
`270, 2754276, 3834385.
`Nakamura, Shuji et al., Candelaiclass highibrightness
`InGan/AlGaN doubleiheterostructure blueilightamitting
`diodes, App. Phys. Lett 64 (13) Mar. 28, 1994, pp.
`168741689.
`Nakamuri, T, “Nichia Chemical starts the sample shipment
`of White light Emitting Diode”, Nikkei Electronics, Sep. 23,
`1996 (No. 671), pp. 15416.
`English translation of (BAV).
`Schlotter, P. et al., “Luminescence conversion of blue light
`emitting diodes”, Applied Physics A, Springer Verlag
`(publ.), Apr. 1997, vol. 4, pp. 417418.
`
`TCL 1020, Page 3
`
`

`

`US 7,078,732 B1
`Page 4
`
`Material Safety Data Sheet, pp. 1 and 2, and Lamp Phosphor
`Data Sheet of Phosphor NPi204 of Nichia Corporation.
`“Phosphor and Emitter”, Osram GmbH, Jun. 1997.
`Proceedints of 264th Institute of Phosphor Society, “Devel
`opment and Application of high bright White LED Lamps”,
`Nov. 29, 1996, pp. 5414.
`English Translaton of (BAAA).
`English Translation of Japanese Patent Application No.
`245381, Filed Sep. 18, 1996, Nichia Chemical Industries
`Ltd.
`English Translation of Japanese Patent Application No.
`359004, Filed Dec. 27, 1996, Nichia Chemical Industries
`Ltd.
`English Translation of Japanese Patent Application No.
`198585, Filed Jul. 29, 1996, Nichia Chemical Industries Ltd.
`English Translation of Japanese Patent Application No.
`018010, Filed Mar. 31, 1997, Nichia Chemical Industries
`Ltd.
`Nikkei Sangyo Shimbun (Nikkei Industrial NeWspaper),
`Sep. 13, 1996.
`English Abstract of Japanese 7499345, Apr. 11, 1995.
`Siemens Forch?u. EntWicklfBer. Bd 6 (1977) No. 3, p. 162
`[Siemens research and development reports, vol. 6].
`S. N. Mohammad et al.: “Emerging Gallium Nitride Based
`Devices”, Proceedings of the IEEE, vol. 83, No. 10, Oct.
`1995, pp. 130641355.
`German Utility Model G 90 13 615.2, dated Jan. 24, 1991,
`electroluminescent or laser diode.
`Japanese Patent Abstract No. 5*152609 (Tadatsu), dated
`Jun. 18, 1993.
`Japanese Patent Abstract 07176794 A (Y oshinori), dated Jul.
`14, 1995.
`Japanese Patent Abstract 08007614 (Yoshinori), dated Jan.
`12, 1996.
`Thomas Justel et al.: “Neue EntWickungen auf dm Gebiet
`luminesZierender Materialien fur Beleuchtungsiund Dis
`playanWendungen” [neW developments in the ?eld of lumi
`nescent materials for lighting and display applications],
`AngeW. Chem. 1998, 110 pp. 325043271.
`D.J. Robbins: “The Effects of Crystal Field and Temperature
`on the Photoluminescence Excitation of Ce3+in YAG”, J.
`Electrochem. Soc.: Solid State Science and Technology,
`Sep. 1979, vol. 126, No. 9, pp. 155(L1555.
`Glen A. Slack et al.: “Optical Absorption of Y3Al5Ol2 from
`10* to 55000wm’l Wave Numbers”, Physical revieW, vol.
`177, No. 3, Jan. 15, 1969, pp. 130841314.
`Shuji Nakamura et al.: “The blue laser diode: GaN based
`light emitters and lasers”, Springer Verlag, berlin, 1997, pp.
`2164219, 328.
`
`G. Blasse et al.: “A NeW Phosphor For FlyingiSpot Cath
`odeiRay Tubes For Color Television: YellowiEmitting
`Y3Al5Ol2£e3+”, Applied Physics Letter, vol. 11, No. 2, Jul.
`15, 1967, pp. 53,54.
`White LED Lamp by Nichia, copy of a Japanese NeWspaper,
`dated Sep. 1996.
`Mary V. Hoffman: “Improved color rendition in high pres
`sure mercury vapor lamps”, Journal of IES, Jan. 1997, pp.
`89491.
`B. M. J. Smets: “Phosphors Based On RareiEarths, ANeW
`Era in Fluorescent Lighting”, Materials Chemistry and
`Physics, 16 (1987), pp. 2834299.
`Frank Mollmer et al.: “Siemens SMTiTOPLED ?ir die
`Ober?achenmontage”, [Siemens SMTiTOPLEDS for sur
`face mounting], Siemens Components 29, 1991, No. 4, pp.
`1474149.
`Summons and Complaint re: CitiZen Electronics Company,
`Ltd. v. Osram GmbH and Osram Opto Semiconductors
`GmbH.
`Summons and Complaint re: CitiZen Electronics Company,
`Ltd. v. Osram GmbH and Opto Semiconductors GmbH.
`Of?ce Action from the Korean Patent Of?ce dated Aug. 25,
`2005.
`Mollmer et al., “Siemens SMT TOPiLED for Surface
`Mounting”, Siemens Components, Bd. 26, No. 6, pp.
`1934196 (1991).
`Translation of Japanese Of?ce Action Dated Jun. 2, 2005.
`Notice of European Opposition Dated Feb. 28, 2005.
`Six European Search Reports dated May 25, 2005.
`In the Matter of Certain LightiEmitting Diodes and Prod
`ucts Containing Same, Investigation No. 337*TA*512,
`“Notice of Commision Final Determination of No Violation
`of Section 337 as to One Patent and Determination to
`Remand the Investigation as Certain Other Patents,” Dated
`Aug. 10, 2005.
`In the Matter of Certain LightiEmitting Diodes and Prod
`ucts Containing Same, Investigation No. 337*TA*512, “Ini
`tial Determination on Violation of Section 337 and Recom
`mended Determination on Remedy and Bond,” (Public
`Version), Dated May 10, 2005.
`In the Matter of Certain LightiEmitting Diodes and Prod
`ucts Containing Same, Investigation No. 337*TA*512,
`“Commission Opinion,” (Public Version), Dated Aug. 29,
`2005.
`
`* cited by examiner
`
`TCL 1020, Page 4
`
`

`

`U.S. Patent
`
`Jul. 18, 2006
`
`Sheet 1 0f 6
`
`US 7,078,732 B1
`
`FIG 1
`
`6
`
`14
`
`s
`
`12
`
`'
`
`'
`
`'
`
`'
`
`1
`
`TCL 1020, Page 5
`
`

`

`U.S. Patent
`
`Jul. 18, 2006
`
`Sheet 2 0f 6
`
`US 7,078,732 B1
`
`FIG 4
`
`4
`
`15 6
`
`14
`
`/7__/1O
`
`\
`
`"N3
`
`1\/'
`
`2N’
`L_
`
`FIGS
`
`7\__
`
`1
`
`Y
`16
`
`2,»
`
`"V3
`
`r..-
`
`L.‘
`
`TCL 1020, Page 6
`
`

`

`U.S. Patent
`
`Jul. 18, 2006
`
`Sheet 3 0f 6
`
`US 7,078,732 B1
`
`H6 6
`
`1
`
`FIG 9
`
`27
`
`25
`
`TCL 1020, Page 7
`
`

`

`U.S. Patent
`
`Jul. 18, 2006
`
`Sheet 4 0f 6
`
`US 7,078,732 B1
`
`F167
`
`M00]
`
`5222 am
`
`
`
`£225 .61
`
`TCL 1020, Page 8
`
`

`

`U.S. Patent
`
`Jul. 18, 2006
`
`Sheet 5 0f 6
`
`US 7,078,732 B1
`
`FIG 11
`
`2225 am
`
`40000
`
`3652 Em
`
`_ 0 O O O 2
`
`400
`
`450
`
`500
`550
`>100]
`
`600
`
`650
`
`500
`
`TCL 1020, Page 9
`
`

`

`U.S. Patent
`
`Jul. 18, 2006
`
`Sheet 6 6f 6
`
`US 7,078,732 B1
`
`36341412
`
`I .
`
`'M\\\\‘ a
`
`F1614
`
`TCL 1020, Page 10
`
`

`

`US 7,078,732 B1
`
`1
`LIGHT-RADIATING SEMICONDUCTOR
`COMPONENT WITH A LUMINESCENCE
`CONVERSION ELEMENT
`
`CROSS-REFERENCE TO RELATED
`APPLICATION
`
`This is a continuation of copending International Appli
`cation PCT/DE97/0l337, ?led Jun. 26, 1997, Which desig
`nated the United States.
`
`BACKGROUND OF THE INVENTION
`
`Field of the Invention
`
`The invention relates to a light-radiating semiconductor
`component With a semiconductor body that emits electro
`magnetic radiation during operation of the semiconductor
`component. The component has at least one ?rst and at least
`one second electrical terminal, Which are electrically con
`nected to the semiconductor body. The component further
`has a luminescence conversion element With at least one
`luminescent material.
`A semiconductor component of that type is disclosed, for
`example, in German published patent application DE 38 04
`293. There, an arrangement having an electroluminescent or
`laser diode in Which the entire emission spectrum radiated
`by the diode is shifted toWard greater Wavelengths by means
`of a plastic element that is treated With a ?uorescent,
`light-converting organic dye. The light radiated by the
`arrangement consequently has a different color from the
`light emitted by the light-emitting diode. Depending on the
`nature of the dye added to the plastic, light-emitting diode
`arrangements Which emit light in different colors can be
`produced using one and the same type of light-emitting
`diode.
`German published patent application DE 23 47 289
`discloses an infrared (IR) solid-state lamp in Which lumi
`nescent material is applied on the edge of an IR diode and
`converts the IR radiation that is radiated there into visible
`light. The aim of this measure is, for supervisory purposes,
`to convert a smallest possible part of the IR radiation emitted
`by the diode into visible light in conjunction With the
`smallest possible reduction of the intensity of the emitted IR
`radiation.
`Furthermore, European patent application EP 486 052
`discloses a light-emitting diode in Which at least one semi
`conductor photoluminescent layer is arranged betWeen the
`substrate and an active electroluminescent layer. The semi
`conductor photoluminescent layer converts the light of a ?rst
`Wavelength rangeithe light emitted by the active layer in
`the direction of the substrateiinto light of a second Wave
`length range, With the result that, altogether, the light
`emitting diode emits light of different Wavelength ranges.
`In many potential areas of application for light-emitting
`diodes, such as, for example, in display elements in motor
`vehicle dashboards, lighting in aircraft and automobiles, and
`in full-color LED displays, there is increasingly a demand
`for light-emitting diode arrangements With Which polychro
`matic light, in particular White light, can be produced.
`Japanese patent application JP-07 176 794-A describes a
`White-light-emitting, planar light source in Which tWo blue
`light-emitting diodes are arranged at an end of a transparent
`plate. The diodes emit light into the transparent plate. The
`transparent plate is coated With a ?uorescent substance on
`one of the tWo mutually opposite main surfaces. The ?uo
`rescent substance emits light When it is excited by the blue
`
`20
`
`25
`
`30
`
`35
`
`40
`
`45
`
`50
`
`55
`
`60
`
`65
`
`2
`light of the diodes. The light emitted by the ?uorescent
`substance has a different Wavelength from that of the blue
`light emitted by the diodes. In that prior art component, it is
`particularly di?icult to apply the ?uorescent substance in
`such a manner that the light source radiates homogeneous
`White light. Furthermore, the question of reproducibility in
`mass production also poses major problems because even
`slight ?uctuations in the thickness of the ?uorescent layer,
`for example on account of unevenness of the surface of the
`transparent plate, cause a change in the shade of White of the
`radiated light.
`
`SUMMARY OF THE INVENTION
`
`It is accordingly an object of the invention to provide a
`light-radiating semiconductor component, Which overcomes
`the above-mentioned disadvantages of the heretofore-known
`devices and methods of this general type and Which radiates
`homogeneous polychromatic light and ensures technically
`simple mass production With component characteristics that
`are reproducible to the greatest possible extent.
`With the foregoing and other objects in vieW there is
`provided, in accordance With the invention, a light-radiating
`semiconductor component, comprising:
`a semiconductor body emitting electromagnetic radiation
`during an operation of the semiconductor component, the
`semiconductor body having a semiconductor layer sequence
`suitable for emitting electromagnetic radiation of a ?rst
`Wavelength range selected from a spectral region consisting
`of ultraviolet, blue, and green;
`a ?rst electrical terminal and a second electrical terminal
`each electrically conductively connected to the semiconduc
`tor body; and
`a luminescence conversion element With at least one
`luminescent material, the luminescence conversion element
`converting a radiation originating in the ?rst Wavelength
`range into radiation of a second Wavelength range different
`from the ?rst Wavelength range, such that the semiconductor
`component emits polychromatic radiation comprising radia
`tion of the ?rst Wavelength range and radiation of the second
`Wavelength range.
`The invention provides for the radiation-emitting semi
`conductor body to have a layer sequence, in particular a
`layer sequence With an active semiconductor layer made of
`GaXInHN or GaxAll_xN, Which emits an electromagnetic
`radiation of a ?rst Wavelength range from the ultraviolet,
`blue and/or green spectral region during operation of the
`semiconductor component. The luminescence conversion
`element converts part of the radiation originating from the
`?rst Wavelength range into radiation of a second Wavelength
`range, in such a Way that the semiconductor component
`emits polychromatic radiation, in particular polychromatic
`light, comprising radiation of the ?rst Wavelength range and
`radiation of the second Wavelength range. This means, for
`example, that the luminescence conversion element spec
`trally selectively absorbs part of the radiation emitted by the
`semiconductor body, preferably only over a spectral subre
`gion of the ?rst Wavelength range, and emits it in the region
`of longer Wavelength (in the second Wavelength range).
`Preferably, the radiation emitted by the semiconductor body
`has a relative intensity maximum at a Wavelength K2520
`nm and the Wavelength range Which is spectrally selectively
`absorbed by the luminescence conversion element lies out
`side this intensity maximum.
`In accordance With an added feature of the invention, the
`luminescence conversion element converts radiation of the
`?rst Wavelength range into radiation of a plurality of second
`TCL 1020, Page 11
`
`

`

`US 7,078,732 B1
`
`3
`Wavelength ranges from mutually different spectral
`subregions, such that the semiconductor component emits
`polychromatic radiation comprising radiation of the ?rst
`Wavelength range and radiation of the plurality of second
`Wavelength ranges. In other Words, the invention advanta
`geously makes it possible also to convert a number (one or
`more) of ?rst spectral subregions originating from the ?rst
`Wavelength range into a plurality of second Wavelength
`ranges. As a result, it is possible to produce diverse color
`mixtures and color temperatures.
`The semiconductor component according to the invention
`has the particular advantage that the Wavelength spectrum
`generated by Way of luminescence conversion and hence the
`color of the radiated light do not depend on the level of the
`operating current intensity through the semiconductor body.
`This has great signi?cance particularly When the ambient
`temperature of the semiconductor component and,
`consequently, as is known, also the operating current inten
`sity greatly ?uctuate. Especially light-emitting diodes hav
`ing a semiconductor body based on GaN are very sensitive
`in this respect.
`In addition, the semiconductor component according to
`the invention requires only a single driving voltage and, as
`a result, also only a single driving circuit con?guration,
`Whereby the outlay on devices for the driving circuit of the
`semiconductor component can be kept very loW.
`In accordance With an additional feature of the invention,
`the semiconductor component has a de?ned main radiating
`direction, and the luminescence conversion element is dis
`posed substantially doWnstream of the semiconductor body
`in the main radiating direction of the semiconductor com
`ponent.
`In accordance With another feature of the invention, the
`luminescence conversion element is at least one lumines
`cence conversion layer disposed in a vicinity of the semi
`conductor body. In this particularly preferred embodiment of
`the invention, a partially transparent luminescence conver
`sion layer, that is to say one Which is partially transparent to
`the radiation emitted by the radiation-emitting semiconduc
`tor body, is provided as the luminescence conversion ele
`ment above or on the semiconductor body. In order to ensure
`a uniform color of the radiated light, the luminescence
`conversion layer is advantageously designed in such a Way
`that it has a constant thickness throughout. This has the
`particular advantage that the path length of the light radiated
`by the semiconductor body through the luminescence con
`version layer is virtually constant for all radiation directions.
`The effect that can be achieved as a result of this is that the
`semiconductor component radiates light of the same color in
`all directions. A further particular advantage of a semicon
`ductor component according to the invention in accordance
`With this development consists in the fact that a high degree
`of reproducibility can be obtained in a simple manner, Which
`is of considerable signi?cance for efficient mass production.
`A resist or resin layer treated With luminescent material may
`be provided, for example, as the luminescence conversion
`layer.
`In accordance With a further feature of the invention, the
`luminescence conversion element is a luminescence conver
`sion encapsulation enclosing at least a part of the semicon
`ductor body and partial regions of the ?rst and second
`electrical terminals. The encapsulation is partially transpar
`ent and encloses at least part of the semiconductor body (and
`possibly partial regions of the electrical terminals) and can
`simultaneously be utiliZed as component encapsulation
`(housing). The advantage of a semiconductor component in
`
`20
`
`25
`
`30
`
`35
`
`40
`
`45
`
`50
`
`55
`
`60
`
`65
`
`4
`accordance With this embodiment consists essentially in the
`fact that conventional production lines used for the produc
`tion of conventional light-emitting diodes (for example
`radial light-emitting diodes) can be utiliZed for its produc
`tion. The material of the luminescence conversion encapsu
`lation is used for the component encapsulation instead of the
`transparent plastic Which is used for this purpose in con
`ventional light-emitting diodes.
`In further advantageous embodiments of the semiconduc
`tor component according to the invention and of the tWo
`preferred embodiments mentioned above, the luminescence
`conversion layer or the luminescence conversion encapsu
`lation is composed of a transparent material, for example
`plastic, preferably epoxy resin, Which is provided With at
`least one luminescent material (examples of preferred plas
`tics and luminescent materials Will be found further beloW).
`In this Way, it is possible to produce luminescence conver
`sion elements in a particularly cost-effective manner.
`Speci?cally, the requisite process steps can be integrated in
`conventional production lines for light-emitting diodes With
`no major outlay.
`In accordance With again an added feature of the
`invention, the second Wavelength range includes Wave
`lengths at least some of Which are longer than Wavelengths
`of the ?rst Wavelength range.
`In accordance With again an additional feature of the
`invention, the semiconductor body is adapted to emit ultra
`violet radiation during operation of the semiconductor
`component, and the luminescence conversion element con
`verts at least a portion of the ultraviolet radiation into visible
`light.
`In accordance With again another feature of the invention,
`the ?rst Wavelength range and the second Wavelength range
`of the polychromatic radiation lie at least partially in mutu
`ally complementary-color spectral regions, and a combina
`tion of radiation from the ?rst and second Wavelength range
`results in White light.
`When the second spectral subregion of the ?rst Wave
`length range and a second Wavelength range are comple
`mentary to one another, it is possible to produce
`polychromatic, in particular White, light from a single col
`ored light source, in particular a light-emitting diode having
`a single blue-light-radiating semiconductor body. In order,
`for example, to produce White light With a blue-light
`emitting semiconductor body, part of the radiation from the
`blue spectral region emitted by the semiconductor body is
`converted into the yelloW spectral region, Which is comple
`mentarily colored With respect to blue. The color tempera
`ture or color locus of the White light can in this case be
`varied by a suitable choice of the luminescence conversion
`element, in particular by a suitable choice of the luminescent
`material, its particle siZe and its concentration. Furthermore,
`these arrangements also advantageously afford the possibil
`ity of using luminescent material mixtures, as a result of
`Which, advantageously, the desired hue can be set very
`accurately. LikeWise, it is possible to con?gure lumines
`cence conversion elements inhomogeneously, for example
`by means of inhomogeneous luminescent material distribu
`tion. Different path lengths of the light through the lumi
`nescence conversion element can advantageously be com
`pensated for as a result of this.
`In accordance With again a further feature of the
`invention, the ?rst Wavelength range emitted by the semi
`conductor body and tWo second Wavelength ranges produce
`an additive color triad, such that White light is radiated by the
`semiconductor component during operation thereof.
`TCL 1020, Page 12
`
`

`

`US 7,078,732 B1
`
`5
`In a further preferred embodiment of the semiconductor
`component according to the invention, the luminescence
`conversion element or another constituent of a component
`encapsulation has, for the purpose of color matching, one or
`more dyes Which do not effect Wavelength conversion. For
`this purpose, it is possible to use the dyes Which are used for
`the production of conventional light-emitting diodes, such
`as, for example, aZo, anthraquinone or perinone dyes.
`In order to protect the luminescence conversion element
`against an excessively high radiation load, in an advant