MERRILL
`BRINI< INTERNATIONAL
`
`Merrill Brlnk International Corporation
`
`P-119
`United States District Court
`Eastern District of Michigan
`No. 12-CV-11758-GAD(MKM)
`
`Date Admitted: __ By: __
`
`1345 Avenue of the Americas, 17th Floor
`New York, NY 10105 • (212) 620 5600
`
`State ofNew York
`
`County of Kings
`
`)
`)
`)
`
`ss:
`
`Certificate of Accuracy
`
`This is to certifY that the attached:
`
`ELIGHT00001486- ELIGHT00001499
`
`originally written in the German language is, to the best of our knowledge and belief, a true,
`accurate and complete translation into the English language.
`
`Dated: March 5, 2015
`
`erations Manager, Legal
`errill Brink futemational
`
`ROBERT J. MAZZA
`- NotaryPublic.-StateofNew'Yortl···-······-
`-
`---
`.. ·· · ··· ·············· ···· ············· ············· No.01 MA505191 f ···· · ··
`·· · ··· · · · ·
`Qualified In Kings County
`Commission Expires April1. 2018
`
`I
`
`I
`
`'
`
`Sworn to and signed before
`____ m~, this
`day of
`5th
`
`2015
`
`(-- 0t:h
`c -N;;-~uhtiC
`
`___ ...., ________________ ---------------
`
`----------------------------
`
`OFFICES IN MAJOR CITIES THROUGHOUT THE WORLD
`Merrill is an Equal Employment Opportunity and Affirmative Action Employer
`
`TCL 1019, Page 1
`
`A020352
`
`

`

`lllllllllllllllll Ill~ 1!1 !I Ill lllllllllll! Ill Ill!! llllllllllll !I IIlli I 1111
`
`(19) FEDERAL REPUBLIC
`OF GERMANY
`
`(12) Patent Application
`(10) DE 196 38 667 A 1
`
`:
`
`(51) Int. Cl.15
`H 01 L 33/00
`G 02 F 2/02
`
`GERMAN PATENT
`OFFICE
`
`196 38 667.5
`(21) File number:
`(22) Application date: 9/20/96
`(43) Disclosure date: 4/2/98
`
`(71) Applicant:
`Siemens AG, 80333 Munich, DE
`
`(72) Inventors:
`
`Schlotter, Peter, 79112 Freiburg, DE; Schmidt,
`Rolf, 79279 Vorstetten, DE; Schneider, JOrgen,
`Dr., 79199 Kirchzarten, DE
`
`(56) Citations:
`33 15 675 C2
`DE
`38 04 293 A1
`DE
`DE-OS 20 59 909
`Abstract of JP 07 175 274 A;
`"Appl. Phys. Let." 69 (Aug. 12, 1966) 889-900;
`
`A request for examination is submitted pursuant to§ 44 PatG
`
`(54) Light-emitting semiconductor element with a luminescence-converting element
`
`(57) A blended color light-emitting semiconductor ele·
`ment with radiation emitting semiconductor body (1)
`and a luminescence-converting element (4, 5). The
`semiconductor body (1) emits radiation having a
`ll
`:::; 520 nm and
`the
`lumines·
`wavelength
`cence·converting element (4, 5) converts a part of
`this radiation into radiation having a higher wave·
`This makes it possible to produce light
`length.
`emitting diodes that emit multicolored light, in partie·
`ular white light. The luminescence-converting ele·
`ment (4, 5) contains a luminescent organic substance
`
`14
`
`11 13
`
`'1""'1
`<(
`.....
`
`IJ)
`IJ)
`
`00 m
`IJ)
`m
`'1""'1
`w c
`
`The following information is taken from documents submitted by the applicant
`BUNDESDRUCKEREI [Federal Printing Office] 02.98 802 014/138
`
`16/23
`
`TRANSLATION
`
`ELIGHT00001486
`TCL 1019, Page 2
`
`A020353
`
`

`

`Description
`
`DE 196 36 667 AI
`
`The invention concerns a semiconductor element
`that emits a mixture of colors, in particular, white light.
`There is an increasing demand in many poten(cid:173)
`tial areas of application for light emitting diodes with
`which it is possible to produce multicolored light, par(cid:173)
`ticularly white light, such as, for example, in display
`elements, vehicle dashboards, illumination in airplanes
`and cars and in full color LED displays. So far it has only
`been possible to produce white "LED"
`light with
`so-called multi LEDs, in which three light emitting di(cid:173)
`odes emitting different colors (in general a red, a green
`and a blue one) or two complementary-colored light
`emitting diodes (e.g., a blue and a yellow one) are used.
`Aside from increased assembly costs, such multi-LEDs
`require expensive control electronics, since the different
`types of diodes require different driving voltages.
`Long-term stability regarding the wavelength and inten(cid:173)
`sity is additionally impacted by the different aging be(cid:173)
`havior of the different light emitting diodes and also
`because of the different driving voltages and the operat(cid:173)
`ing currents resulting therefrom. An additional disad(cid:173)
`vantage of the Multi-LEDs is that component miniatur(cid:173)
`ization is strongly limited.
`It is the task of the present invention to develop a
`semiconductor element of the aforesaid kind, by means
`of which, in a technically simple manner and with as little
`use of components as possible, multicolored light, in
`particular white light, can be produced.
`This task is accomplished by means of a semi(cid:173)
`conductor element according to Claim 1. Additional
`advantageous embodiments are the objects of the de(cid:173)
`pendent claims 2 to 30. The dependent Claims 31 to 34
`disclose possible preferred applications of the semicon(cid:173)
`ductor element of this invention.
`According to this invention, a radiation-emitting
`semiconductor body is provided with at least a first and at
`least a second electrical contact, which is electrically
`connected to the semiconductor body, to which a lumi(cid:173)
`nescence-converting element is attached. The semicon(cid:173)
`ductor has a layer sequence which emits electromagnetic
`radiation at wavelengths A :S 520 nm. It particularly has a
`layer sequence with an active layer of GaJn 1_xN or
`GaxA1 1_xN. The luminescence-converting element trans(cid:173)
`forms radiation in a first wavelength range of the radia(cid:173)
`tion out of a first wavelength range emitted by the sem(cid:173)
`iconductor body into a second wavelength range such
`that the semiconductor component emits in at least a
`second spectral subrange of the first wavelength range
`and radiation in the second wavelength range. The lu(cid:173)
`minescence-converting element is, for this purpose,
`provided with an inorganic luminescent compound, in
`particular a phosphor. This means, for example, that the
`luminescence-converting element selectively spectrally
`absorbs a part of the radiation emitted by the semicon(cid:173)
`ductor body and emits it in a longer wavelength range (in
`the second wavelength range). The radiation emitted by
`the semiconductor body ideally has a wavelength A :S 520
`nm at an intensity maximum.
`In an advantageous additional configuration of the
`semiconductor element according to this invention, the
`luminescence-converting element consists at least in part
`
`of a transparent epoxy resin to which the organic lumi(cid:173)
`nescent material is added. It is in fact advantageously
`possible to incorporate inorganic luminescent substanc(cid:173)
`es,
`in particular phosphors, such as Y AG: Ce
`(Y3Al50 12:Ce+3
`) in the epoxy resin in a simple manner.
`Other suitable luminescent substances are other garnets
`doped with rare earths, such as Y 3Ga50 12:Ce+3
`, as well as
`alkali earth sulfides doped with rare earths, such as
`SrS:Ce+3
`, Na, SrS:Ce+3
`, Cl, SrS:CeC13, CaS:Ce+3 and
`SrSe:Ce+3
`•
`Thiogsallates doped with with rare earths, such as
`CaGa2S4:Ce+3 and SrGa2S4:Ce+3 as well as aluminates
`as Y Al03:Ce +3
`doped with
`rare
`earths,
`such
`,
`YGa03:Ce+3
`, and orthosilicates doped with rare earths,
`such as M 2Si05:Ce+3
`(M: Sc, Y, Sc), such as
`Y 2Si05:Ce +3
`, are capable of producing light of blended
`colors. The yttrium in all of the yttrium compounds can
`in principle be replaced by scandium or lanthanum.
`It is likewise advantageously possible, in the case
`of the semiconductor component according to this in(cid:173)
`vention, to convert a number (one or more) of first spec(cid:173)
`tral ranges deriving from the first spectral range into
`several second wavelength ranges. It is thus advanta(cid:173)
`geously possible to produce various color mixtures and
`color temperatures.
`The semiconductor element of this invention has
`the particular advantage that the wavelength spectrum
`produced by wavelength conversion and thus the result(cid:173)
`ing color of the emitted light does not depend on the
`magnitude of the operating current passing through the
`semiconductor body. This is of particularly great im(cid:173)
`portance if the ambient temperature of the semiconductor
`element, and thus, as is well-known, the operating cur(cid:173)
`rent, varies considerably. Light emitting diodes with a
`semiconductor body based on GaN are particularly sen(cid:173)
`sitive in this regard.
`Contrary to the multi-LEDs mentioned above, the
`semiconductor element of this invention additionally
`needs only one driving voltage and thus only one control
`circuit, whereby the component cost can be kept very
`low.
`
`A particularly preferred embodiment of the inven(cid:173)
`tion makes use of a partially transparent, i.e., partially
`transparent to
`the radiation emitted by the radia(cid:173)
`tion-emlttmg
`semiconductor
`body,
`lumines(cid:173)
`cence-converting element. To ensure a uniform color of
`the emitted light, the luminescence-converting layer can
`advantageously be designed so that it has a constant
`thickness throughout. According to this additional im(cid:173)
`provement, it is a particular advantage of the semicon(cid:173)
`ductor element according to this invention that a high
`reproducibility can be achieved in a simple manner,
`which is of great significance for mass production. A
`lacquer or synthetic resin layer can, for instance, be used
`as a luminescence-converting layer.
`Another preferred embodiment of the semicon(cid:173)
`ductor element of this invention has a partially trans(cid:173)
`parent luminescence-converting casing as a lumines(cid:173)
`cence-converting element, which casing encloses at least
`a part of the semiconductor body (and possibly portions
`of the electrical connectors) and can be used as a
`
`TRANSLATION
`
`TCL 1019, Page 3
`ELIG HT00001487
`
`A020354
`
`

`

`DE 196 36 667 AI
`polymer, to which the luminescence-converting layer is
`component casing (housing) at the same time. The ad(cid:173)
`applied. This reduces the radiation intensity in the lu(cid:173)
`vantage of a semiconductor element according to this
`minescence-converting element and thus its radiation
`embodiment is essentially that it is possible to use pro(cid:173)
`exposure, which has a positive effect on the life span of
`duction lines that are conventionally used for producing
`the luminescence-converting element depending on the
`conventional light emitting diodes (e.g., radial light
`emitting diodes) to produce it. The material of the lu(cid:173)
`materials used.
`A particularly preferred further improvement of
`minescence conversion casing is used as the component
`casing in place of the transparent plastic used for con(cid:173)
`the invention as well as the aforementioned embodiments
`make use of a semiconductor body, e.g., a light emitting
`ventional light emitting diodes.
`In advantageous implementations of the semicon(cid:173)
`or a laser diode, in which the spectrum of the emitted
`ductor element of this invention and of aforementioned
`radiation has a luminescence maximum at a wavelength
`preferred embodiments,
`the luminescence-converting
`between 420 nm and 460 nm, in particular at 430 nm
`layer or the luminescence-converting casing consists of a
`(e.g., semiconductor bodies based on GaxA1 1_xN) or 450
`transparent material (e.g., a polymer such as an epoxy
`nm. (e.g., semiconductor bodies based on Gaxin 1_xN).
`resin) to which at least one luminescent dye is added
`By using such a semiconductor element according to this
`(examples of suitable polymers are provided below).
`invention it is possible to produce nearly all colors and
`Luminescence-converting elements can be produced
`color combinations of the CIE color palette.
`In another particularly preferred implementation of
`particularly economically in this way. The process steps
`the invention and its embodiments, the luminescence
`needed for this can in fact be integrated into conventional
`-converting casing and/or the luminescence-converting
`production lines for light emitting diodes without much
`layer consists of a lacquer or a polymer, such as silicone,
`expense.
`thermoplastic or thermosetting material (epoxy and
`In a particularly preferred other implementation of
`acrylate resins) used as the casing of optoelectronic el(cid:173)
`this invention and/or of the aforesaid embodiments, the
`ements. It is furthermore possible to use covering ele(cid:173)
`second wavelength range(s) are at least partly at a longer
`ments, e.g., made of thermoplastic, as a lumines(cid:173)
`wavelength than the first wavelength range.
`cence-converting layer. All aforementioned materials
`It is in particular ensured that a second spectral
`can be added to one or more luminescing materials in a
`subrange of the first wavelength range and the second
`wavelength range are complementary to each other. This
`simple manner.
`A semiconductor element according to this inven(cid:173)
`particularly makes it possible to produce multicolored
`light, in particular white light, by means of a single-color
`tion can be realized in a particularly simple manner if the
`light source, particularly by way of a light emitting diode
`semiconductor body is placed in a recess of a possibly
`with a light-emitting semiconductor that only emits blue
`prefabricated housing according to a preferred imple(cid:173)
`or green light. For example, to produce white light with a
`mentation and if the recess is equipped with a covering
`element with a luminescence-converting layer. Such a
`light emitting semiconductor body that only emits blue
`light, a portion of the spectral range emitted by the sem(cid:173)
`semiconductor element can be mass produced in large
`numbers in conventional production lines. To accomplish
`iconductor body is converted into the yellow spectral
`this, it is simply necessary for the covering element, e.g.,
`range. In the process, the color temperature of the white
`a layer of lacquer or casting resin or a prefabricated
`light can be varied by way of a suitable selection of the
`luminescent substance and a suitable design of the lu(cid:173)
`covering made of a thermoplastic, to be mounted on the
`minescence-converting element (e.g., concerning its
`housing after the semiconductor body is installed. The
`thickness and the concentration of the luminescent sub(cid:173)
`recess in the housing can optionally be filled with a
`transparent material, for example, a transparent polymer,
`stance). In addition, these structures advantageously also
`which, e.g., does not alter the wavelength of the light
`offer the possibility of using luminescent dye mixtures
`emitted by the semiconductor body or else can, if desired,
`whereby the desired color tone can be readily adjusted in
`be designed to be luminescence converting. In the latter
`a very precise manner.
`case, the covering element can also be omitted.
`lumines(cid:173)
`produce
`to
`It
`is
`also possible
`Advantageous materials for producing the afore(cid:173)
`cence-converting elements in an inhomogeneous way,
`said luminescence-converting layer and/or the lumines(cid:173)
`e.g., with an inhomogeneous luminescent dye distribu(cid:173)
`cence-converting
`casing
`are,
`for
`example,
`tion. In the process, different wavelengths of the light
`polymethylmethacrylate (PMMA) or an epoxy resin to
`produced by the luminescence-converting element can be
`compensated for in an advantageous manner.
`which one or more luminescing materials are added.
`In a further preferred embodiment of the lumines(cid:173)
`In a particularly advantageous embodiment of the
`cence-converting semiconductor of this invention, the
`semiconductor element according to this invention, at
`luminescence-converting element or another component
`least all of the components of the casing through which
`light passes, i.e., the luminescence converting casing or
`casing contains one or more dyes that do not perform any
`layer as well, are made of purely inorganic materials. The
`wavelength conversion. Dyes used for the production of
`conventional
`light
`emitting
`diodes,
`e.g.,
`azo,
`luminescence converting element thus consists of an
`inorganic luminescent material, which is embedded in an
`anthraquinone or perinone dyes can be used for this
`inorganic material that is temperature-stable, transparent
`purpose as usual.
`In an advantageous further improvement of the
`or partially transparent. The luminescence
`converting
`semiconductor element according to this invention, at
`element particularly consists of an inorganic phosphor
`which is embedded in a preferably inorganic glass that
`least a part of the surface of the semiconductor body is
`melts at a low temperature (e.g., a silicate glass). A pre-
`covered with a first transparent coating, e.g., made of a
`
`TRANSLATION
`
`TCL 1019, Page 4
`ELIG HT00001488
`
`A020355
`
`

`

`DE 196 36 667 AI
`ferred method for producing such a luminescence con(cid:173)
`geous way.
`It is of particular advantage for the excitation effi(cid:173)
`verting layer is the sol-gel method, by means of which
`the entire luminescence converting layer, i.e., both the
`ciency of white light emitting semiconductor elements of
`inorganic luminescent material and the material in which
`this invention and/or of the aforesaid embodiments to be
`it is embedded, can be produced in one production step.
`increased considerably, as compared with the excitation
`efficiency of a light bulb, by way of a blue light emitting
`To improve the mixing of the radiation of the first
`wavelength range emitted by the semiconductor body
`semiconductor body essentially based on GaN. The
`with the radiation of the second wavelength range ob(cid:173)
`reason for this is that, on the one hand, the external
`tained by luminescence conversion and thus the color
`quantum yield of such semiconductor bodies is a few
`constancy of the emitted light, it is possible, in an ad(cid:173)
`percent and, on the other hand, the luminescence yield of
`vantageous development of the semiconductor element
`inorganic dye molecules is often about 90%. The sem(cid:173)
`according to the invention, to also add to the lumines(cid:173)
`iconductor element of this invention furthermore has an
`extremely long lifespan in comparison with a light bulb,
`cence casing and/or the luminescence conversion layer a
`dye that luminesces in the blue, which weakens the
`it is more robust and it operates at a lower voltage.
`so-called directionality of the radiation emitted by the
`It is furthermore advantageous that the brightness
`semiconductor body. Directionality is understood to
`of the semiconductor element of this invention that is
`perceptible to the human eye as compared with a semi(cid:173)
`signify that the radiation emitted by the semiconductor
`body has a preferred beam direction.
`conductor element that is not fitted with a luminescence
`converting element, but is otherwise identical, can be
`In a further advantageous development of the
`increased considerably because the eye's sensitivity in(cid:173)
`semiconductor component according to this invention, an
`creases at longer wavelengths. It is furthermore possible
`inorganic luminescent material in the form of a powder is
`used, which does not dissolve in the enveloping material
`to convert ultraviolet light to visible light.
`(matrix). The inorganic luminescent material and the
`The concept of luminescence conversion with the
`material in which it is enveloped also have different
`blue light of a semiconductor body presented here can
`also be advantageously extended to multiple-stage lu(cid:173)
`indexes of refraction. This advantageously causes a
`fraction of the light that is not absorbed by the lumines(cid:173)
`minescence conversion elements according
`to
`the
`scheme ultraviolet---> blue ---> green ---> yellow ---> red. In
`cent material, depending on the grain size, to be scat(cid:173)
`tered. This efficiently weakens the directionality of the
`this case a number of spectrally selectively emitting
`radiation emitted by the semiconductor body so that
`luminescence conversion elements are disposed one
`unabsorbed radiation and the radiation deriving from
`behind the other relative to the semiconductor body.
`luminescence conversion can be homogeneously blend(cid:173)
`It is also advantageously possible to jointly embed
`ed, which leads to a spatially homogeneous color im(cid:173)
`several inorganic luminescent materials that emit in a
`spectrally selective manner in a transparent polymer of a
`pression. This is, for example, the case when Y AG:Ce
`luminescence-converting element. This makes it possible
`having a grain size of 4 - 13 1-Lm is embedded in epoxy
`to produce a very wide color spectrum.
`resm.
`The semiconductor elements of this invention can
`be employed particularly advantageously in, e.g., full
`color LED displays or for purposes of illumination in
`airplanes, motor vehicles, etc.
`A particular advantage of the white light emitting
`semiconductor elements of this invention based on
`Ce-doped phosphors, particularly Ce-doped garnets, such
`as YAG:CE, as luminescing materials is that, upon ex(cid:173)
`citation with blue light, these luminescing materials
`effectuate a spectral shift of about 100 nm between ab(cid:173)
`sorption and emission. This leads to a considerable re(cid:173)
`duction in the reabsorption of the light emitted by the
`luminescent material and thus to a higher light yield.
`Such inorganic luminescing materials additionally, ad(cid:173)
`vantageously and generally have a higher thermal and
`photochemical (e.g., UV) stability (considerably higher
`than organic luminescent materials), so that it is possible
`to produce white light emitting diodes for exterior ap(cid:173)
`plications and/or higher temperature ranges.
`Semiconductor elements of this invention can most
`advantageously be used for purposes of illuminating
`motor vehicle interiors and airplane cabins as well as for
`displays, such as such as motor vehicle dashboards or
`liquid crystal displays, particularly because of their low
`power consumption in full color LED displays.
`
`A semiconductor element that emits white light
`can, for example, be made by mixing the inorganic lu(cid:173)
`minescent material Y2Al50 12:Ce+3 into an epoxy resin
`used to produce the luminescence converting casing or
`layer. A portion of the blue radiation emitted by the
`semiconductor body is shifted to the yellow wavelength
`range
`by
`the
`inorganic
`luminescent material
`Y2Al50 12:Ce+3 and thus into a complimentary wave(cid:173)
`length region. The color tone (chromaticity coordinate in
`the CIE Color Pallet) of the white light can then be varied
`through an appropriate choice of dye mixture and con(cid:173)
`centration.
`The inorganic phosphor Y AG:Ce has the particular
`advantage among others that this concerns insoluble
`pigments (a particle size of e.g., 10 1-Lm) with an index of
`refraction of approx. 1.84. As a result a scattering effect
`takes place in addition to wave length conversion, which
`leads to a good blending of the blue diode emission and
`the yellow converter emission.
`In a further preferred implementation of a semi(cid:173)
`conductor element of this invention and/or of the afore(cid:173)
`said advantageous embodiments, light scattering parti(cid:173)
`cles, so-called diffusers, are added to the luminescence
`converting element or some other light transmitting
`component of the component casing. This allows the
`color impression and the directional characteristics of the
`semiconductor element to be optimized in an advanta-
`
`TRANSLATION
`
`TCL 1019, Page 5
`ELIGHT00001489
`
`A020356
`
`

`

`DE 196 36 667 AI
`
`Further characteristics, advantages and expediencies of
`the invention are provided via the following description
`of nine example embodiments in connection with Figs. 1
`to 12, which show:
`Fig. 1 a schematic cutaway view of a first example em(cid:173)
`bodiment of a semiconductor element of this invention;
`Fig. 2 a schematic cutaway view of a second example
`embodiment of a semiconductor element of this inven(cid:173)
`tion;
`Fig. 3 a schematic cutaway view of a third example
`embodiment of a semiconductor element of this inven(cid:173)
`tion;
`Fig. 4 a schematic cutaway view of a fourth example
`embodiment of a semiconductor element of this inven(cid:173)
`tion;
`Fig. 5 a schematic cutaway view of a fifth example em(cid:173)
`bodiment of a semiconductor element of this invention;
`Fig. 6 a schematic cutaway view of a sixth example
`embodiment of a semiconductor element of this inven(cid:173)
`tion;
`Fig. 7 a schematic representation of an emission spec(cid:173)
`trum of a blue light emitting semiconductor body with a
`layer sequence based on GaN;
`Fig. 8 a schematic representation of the emission spectra
`of two semiconductor elements of this invention, which
`emit white light;
`Fig. 9 a schematic sectional view of a semiconductor
`body, which emits blue light;
`Fig. 10 a schematic cutaway view of a seventh example
`embodiment of a semiconductor element of this inven(cid:173)
`tion;
`Fig. 11 a schematic cutaway view of a eighth example
`embodiment of a semiconductor element of this inven(cid:173)
`tion; and
`Fig. 12 a schematic cutaway view of a ninth example
`embodiment of a semiconductor element of this inven(cid:173)
`tion; and
`Equivalent and/or equivalent acting parts are al(cid:173)
`ways assigned the same reference symbols in the dif(cid:173)
`ferent figures.
`In the case of the light emitting semiconductor
`element shown in Fig. 1, a semiconductor body 1, e.g., a
`light emitting diode or a laser diode, has a back side
`contact 11, a front side contact 12 and of a sequence of
`layers 7 consisting of a number of different layers having
`at least one radiation emitting (e.g., ultraviolet, blue or
`green light emitting) active zone.
`An example of a suitable sequence of layers 7 of
`this and all embodiments described hereinafter is shown
`in Fig. 9. In this case, a sequence of layers consisting of
`an AlN or a GaN layer 19, ann-conducting GaN layer 20,
`an n-conducting GaxA1 1_xN or a Gaxin 1_xN layer 21, an
`additional n-conducting GaN or GaJn 1_xN layer 22, a
`p-conducting GaxA1 1_xN or GaJn 1_xN layer 23 and a
`p-conducting GaN layer 24 is deposited on a principal
`substrate 18 consisting of, for example, SiC. A contact
`metallization 27, 28 made of a material conventionally
`used for electrical contacts in semiconductor technology
`is deposited on the top surface 25 of the p-conducting
`GaN layer 24 and the top surface 26 of the substrate 18.
`It is however possible to use any other semicon-
`
`ductor body, which an expert considers to be suitable, as
`the semiconductor element of this invention. This also
`applies to all embodiments described hereafter.
`In the example embodiment of Fig. 1, the semi(cid:173)
`conductor body 1 is fastened by way of its back side
`contact 11 to a first electrical contact 2 by means of an
`electrically conducting connecting device, e.g., a metallic
`solder or an adhesive. The front side contact 12 is con(cid:173)
`nected with a second electrical contact 3 by means of a
`bond wire 14.
`The semiconductor body 1 and portions of the
`electrical contacts 2 and 3 are entirely enclosed in a
`luminescence conversion casing 5. The latter, for exam(cid:173)
`ple, consists of a transparent polymer that is usable for
`transparent light emitting diode casings (e.g., epoxy resin
`or polymethylmetacrylate) or an inorganic glass that
`melts at a low temperature, into which an inorganic
`phosphor 6, e.g., Y3Al50 12:Ce+3 (YAG:Ce) is admixed in
`order to produce a white light emitting semiconductor
`element.
`The example embodiment of a semiconductor
`element of this invention shown in Fig. 2 differs from
`that in Fig. 1 in that the semiconductor body 1 and por(cid:173)
`tions of the electrical contacts 2 and 3 are enclosed in a
`transparent casing 15 instead of a luminescence conver(cid:173)
`sion casing. This transparent casing 15 does not cause the
`wavelength of the radiation emitted by the semiconductor
`body 1 to change and consists, for example, of an epoxy,
`silicone or acrylate resin or another suitable material,
`such as inorganic glass.
`A luminescence converting layer 4, which covers
`the entire surface of the transparent casing 15 as shown in
`Fig. 2, is applied onto this casing 15. It is also conceiv(cid:173)
`able for the luminescence converting layer 4 to cover
`only a portion of this surface. The luminescence con(cid:173)
`verting layer 4 again, for example, consists of a trans(cid:173)
`lacquer or
`parent polymer
`(e.g.,
`epoxy
`resin,
`polymethylmetacrylate) or of an inorganic glass to which
`an inorganic phosphor 6 is added. In this case, as well, a
`suitable phosphor for a white light emitting semicon(cid:173)
`ductor element is, for example, Y AG:Ce.
`This example embodiment has the previously
`mentioned particular advantage that the wavelength of
`the radiation emitted by the semiconductor body in
`passing through the radiation-converting element is ap(cid:173)
`proximately the same. This plays a particularly important
`role if, as it is often the case, the exact color shade of the
`light emitted by the semiconductor element depends on
`this wavelength.
`A lens-shaped cover 29 (shown by a dashed line),
`which reduces total reflection of the radiation within the
`luminescence-converting layer, can be installed on a side
`surface of the component for purposes of improved de(cid:173)
`coupling of the light from the luminescence-converting
`layer 4 of Fig. 2. This lens-shaped cover 29 can consist of
`transparent plastic or glass and can, for example, be
`glued onto the luminescence converting layer 4 or it can
`be made to be an intimate component of the lumines(cid:173)
`cence converting layer 4.
`In the example embodiment shown in Fig. 3, the
`first and second electrical contacts 2, 3 are embedded in
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`ELIGHT00001490
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`DE 196 36 667 AI
`together with the aforesaid phosphors.
`an opaque possibly prefabricated basic housing 8 with a
`The entire structure, consisting of a semiconductor
`recess 9. The word "prefabricated" is to be understood
`body 1, subdomains of the electrical contacts 2, 3, a
`to mean that the basic housing 8 has been previously
`molded onto the contacts 2, 3, e.g., by injection molding,
`transparent casing 15 is enclosed in a further transparent
`casing, which does not cause the wavelength of the light
`before the semiconductor body is mounted onto the
`contact 2. The basic housing 8 can, for example, be
`passing through the luminescence converting layer 4 to
`change. It is, for example, again made of a transparent
`made of an intransparent polymer and the recess 9 is
`configured as a reflector 17 (possibly by way of a suitable
`epoxy resin or glass conventionally used in light emitting
`coating of the inner walls of the recess 9). Such basic
`diode technology.
`The example embodiment shown in Fig. 5 essen(cid:173)
`housings 8 have been used for some time, in particular in
`surface-mountable
`light
`emitting
`diodes
`(SMD
`tially differs from that in Fig. 4 in that the free surfaces of
`the semiconductor body 1 are directly covered by a lu(cid:173)
`TOPLEDs), and are therefore not described in greater
`minescence-converting casing 5, which is in turn en(cid:173)
`detail here. They are mounted on a conducting strip
`(leadframe) having the electric contacts 2, 3 prior to the
`veloped by a further transparent casing 10. Fig. 5 fur(cid:173)
`thermore shows an example of a semiconductor body 1 in
`installation of the semiconductor bodies.
`recess 9
`lumines(cid:173)
`is
`covered by a
`The
`which, instead of the back side contact 11, an additional
`cence-converting layer 4, for example, a cover plate 17
`contact is affixed to the semiconductor layer sequence 7,
`made of a polymer, which is produced separately and is
`which contact is connected to the associated electrical
`contact 2 or 3 by means of a second bond wire 14. Such
`fastened onto the basic housing 8. Suitable materials for
`the luminescence converting layer 4 are again the poly(cid:173)
`semiconductor bodies 1 are of course also employable in
`mers mentioned above in the general description or an
`all the other example embodiments described herein.
`inorganic glass along with the inorganic phosphors
`Conversely, it is naturally also possible to employ a
`semiconductor body 1 in accordance with the aforemen(cid:173)
`mentioned there. The recess 9 can be filled with a
`tioned example embodiments in the example embodi(cid:173)
`transparent polymer, an inorganic glass or with gas and
`ment of Fig. 5.
`evacuated.
`As in the example embodiment according to Fig. 2,
`For the sake of completeness, it should also be
`a lens-shaped cover 29 (shown by a dashed line), which
`mentioned here that, in the case of the configuration
`according to