US006444566B1
`(10) Patent No.:
`a2) United States Patent
`US 6,444,566 B1
`Tsai et al.
`(45) Date of Patent:
`Sep. 3, 2002
`
`
`(54) METHOD OF MAKING BORDERLESS
`CONTACT HAVING A SION BUFFER LAYER
`
`(75)
`
`Inventors: Ming Huan Tsai, Chu-pei; Jyh Huei
`Chen, Hsin-Chu; Chu Yun Fu, Taipei;
`Hun Jan Tao, Hsinchu, all of (TW)
`
`(73) Assignee: Taiwan Semiconductor
`Manufacturing Company, Hsin-Chu
`(TW)
`
`(*) Notice:
`
`Subject to any disclaimer,the term ofthis
`patent is extended or adjusted under 35
`U.S.C. 154(b) by 0 days.
`
`(21) Appl. No.: 09/845,481
`4.
`Gay Eiiea
`Apr. 30, 2001
`(51)
`Int.Cl HOIL 21/4763; HO1L 21/302
`(52)
`UWS. Che ceecccceseceeteeen 438/624; 438/586; 438/634;
`438/637; 438/706; 438/735; 438/738; 438/740;
`438/744
`(58) Field of Search .........cccccccccsseecessen 438/585, 586,
`438/622, 628, 634, 637-641, 706, 710,
`723, 724, 735, 738, 740, 743, 744
`
`(56)
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`6,017,826 A *
`1/2000 Zhouetal.
`6,072,237 A *
`....
`6/2000 Jang etal.
`we 257/698
`
`6,083,824 A *
`7/2000 Tsai etal. .....
`wo 438/629
`
`6,110,278 A *
`8/2000 Chien etal. .....
`.. 438/675
`6,133,105 A * 10/2000 Chenetal. ow... 438/296
`6,297,162 B1 * 10/2001 Janget al.
`6,316,348 Bi * 11/2001 Fuetal.
`
`* cited by examiner
`
`Primary Examiner—Ha Tran Nguyen
`(74) Attorney, Agent, or Firm—George O. Saile; Stephen B.
`Ackerman
`ABSTRACT
`67)
`Borderless contacts are used in integrated circuits in order to
`conserve chip real estate. As part of the process for manu-
`facturing borderless contacts, an etch-stopping layer of
`silicon nitride is first
`laid over the area that
`is to be
`contacted. Investigation has now shownthat this can lead to
`damageto thesilicon at the edges of the via. The present
`invention eliminates this damage by introducing a buffer
`layer betweenthe silicon surface and said sidon nitride layer.
`Suitable materials for the buffer layer that have been found
`to be infective include silicon oxide and silicon oxynitride
`with the latter offering some ditional advantages over the
`former. Experimental data confirming the effectiveness of
`the buffer layer are provided, together with a processfor its
`manufacture.
`
`5,677,231 A * 10/1997 Maniar etal. oo... 437/67
`
`6 Claims, 3 Drawing Sheets
`
`19
`
`13
`18
`18
`
`12
`
`141617 15
`
`13
`28
`21
`
`il
`
`TSMC 1215
`
`TSMC 1215
`
`

`

`U.S. Patent
`
`Sep. 3, 2002
`
`Sheet 1 of 3
`
`US 6,444,566 B1
`
`19
`
`12
`
`1416 17 15
`
`FIG.
`
`1 — Prior Art
`
`13
`
`28
`
`1 l
`
`l
`
`13
`28
`24
`
`ll
`
`2l
`
`13
`18
`18
`
`12
`
`141617 15
`
`19
`
`12
`141617 15
`FIc. 8
`
`

`

`U.S. Patent
`
`Sep. 3, 2002
`
`Sheet 2 of 3
`
`US 6,444,566 B1
`
`10!
`
`10°
`Isub (um)
`
`10°
`
`(MIN)
`LIFETIME
`
`
`‘ap
`in
`
`8 V
`
`48 VT P4 Niu
`
`V, (volts)
`
`FIG. 5
`
`

`

`U.S. Patent
`
`Sep. 3, 2002
`
`Sheet 3 of 3
`
`US 6,444,566 B1
`
`99
`
`90
`
`70
`
`30
`
`30
`
`10
`
`l
`
` 993.9
`
`0.1
`
`0
`
`4
`
`Mm
`
`4
`
`8g
`
`N
`
`o
`
`N
`
`N
`
`N
`
`©
`
`N
`
`T
`
`N
`
`"n
`
`“
`
`49 Isat P4 107.13
`Tayi mA)
`
`FIG.
`
`6
`
`

`

`US 6,444,566 Bl
`
`2
`BRIEF DESCRIPTION OF THE DRAWINGS
`
`FIG. 1 is an example of a borderless contact of the prior
`art.
`
`FIG. 2 shows an intermediate stage in the manufacture of
`the structure disclosed in the present invention.
`FIG. 3 showsa borderless contact made according to the
`teachings of the present invention.
`FIG. 4 is a plotof lifetime as a function of 1,,,, for devices
`similar to that of FIG. 1 and for devices similar to that of
`FIG. 3.
`
`10
`
`FIG. 5 is a plot of V;vs. distribution for devices similar
`to that of FIG. 1 and for devices similar to that of FIG. 3.
`
`15
`
`FIG. 6 isa plot of 1,,,,, VS. distribution for devices similar
`to that of FIG. 1 and for devices similar to that of FIG. 3.
`
`DESCRIPTION OF THE PREFERRED
`EMBODIMENTS
`
`20
`
`5
`
`invention in terms of a
`We will describe the present
`process for manufacturing it. In the course of this,
`the
`structure of the present invention will also become apparent.
`Referring nowto FIG. 2, we show there silicon substrate 11
`in whose upper surface a field effect transistor has been
`formed. This field transistor comprises source and drain
`regions 14 and 15, gate insulation layer 16, and gate pedestal
`17, and is adjacent
`to insulation-filled shallow isolation
`trench 12.
`
`1
`METHOD OF MAKING BORDERLESS
`CONTACT HAVING A SION BUFFER LAYER
`
`FIELD OF THE INVENTION
`
`The invention relates to the general field of silicon inte-
`grated circuits with particular reference to interconnection
`technology, particularly borderless contacts.
`BACKGROUND OF THE INVENTION
`
`As componentdensities in integrated circuits continue to
`increase, ways are constantly being sought to make the most
`efficient use possible of all chip real estate. A particular
`example is the development of borderless contacts. In the
`priorart, it was standard to provide a border around all metal
`vias where they emerged at a surface. Such a border allowed
`a small amountof misalignment,relative to the next level of
`metalization to be tolerated.
`
`FIG. 1 shows an example of a borderless contact, seen in
`schematic cross-section. Metal via 19 is intended to contact
`source (or drain) area 14 which is adjacent to insulation-
`filled shallow isolation trench 12. The detailed process for
`making the contact is described in the prior art (see, for
`example, Jang et al. in U.S. Pat. No. 6,072,237). Suffice it to
`say that an important part of this process is that an etch-
`stopping layer of silicon nitride 18is first laid over the area
`that is to be contacted before the hole for via 19 is formed.
`This extra step allows said via hole to be substantially
`overetched while protecting the underlying material.
`While the borderless contact process and structure work
`as intended, later work revealed that, at least in some cases,
`devices contacted through borderless contacts of the type
`shown in FIG. 1 were undergoing some performance deg-
`radation. Further investigation has shown that, even though
`the silicon nitride etch stop layer 18 is removed from the
`floor of the via hole before the via hole is filled with metal,
`damageto the silicon at the edges of the via was occurring
`in the form of dislocations that propagate downwards into
`the silicon. As is well known, such dislocations have a
`significant impact on device performance.
`The problem to be solved by the present invention was
`therefore how to provide high quality borderless contacts
`without in any way impacting device performance.
`As part of a routine search of the prior art, several other
`examples of borderless contacts were encountered. These
`were U.S. Pat. No. 6,133,105 (Chen et al.), U.S. Pat. No.
`6,083,824 (Tsai et al.), and U.S. Pat. No. 5,677,231 (Maniar
`et al.). The use of an oxide layer as an etch stop layer is
`mentioned by Chien et al. in U.S. Pat. No. 6,110,827.
`SUMMARYOF THE INVENTION
`
`40
`
`45
`
`In a key departure from the prior art, buffer insulation
`layer 21 has been laid down before the deposition of silicon
`nitride layer 28, as wasthe case for the prior art structure that
`is illustrated in FIG. 1. We have determined that either of
`
`two materials are suitable for use as said buffer layer. These
`are:
`
`Silicon oxide: This is deposited by means of CVD
`(chemical vapor deposition) to a thickness between
`about 30 and 200 Angstroms; or
`Silicon oxynitride:. This is deposited by means of PE
`(plasma cnhanced) CVD to a thickness between about
`50 and 400 Angstroms.
`However, as will become evident below, silicon oxyni-
`tride provides additional advantagesrelative to silicon
`oxide over and aboveits use for stressreliet.
`
`With layer 21 in place, silicon nitride layer 28 was
`deposited over it to a thickness between about 50 and 400
`Angstroms. Dielectric layer 13 is then deposited onto silicon
`nitride layer 28 and is then patterned and etched, using
`standard photolithographic techniques, to form via hole 19,
`that extends thoughlayer 13as far as silicon nitride layer 28.
`The latter acts as an etch stop layer allowing considerable
`over-etching to occur as a normal part of the borderless
`contact formation process. Via hole 19 has a maximum
`width (diagonal or diameter) of between about 0.1 and 0.2
`microns.
`
`All silicon nitride is then selectively removed from the
`bottom of via hole 19. This was accomplished by using a
`hydrogen bearing plasma such as trifluoromethane,
`difluoromethane, or monofluoromethane,
`together with
`argon, oxygen and or carbon monoxide, following which
`any exposed portion of layer 21 was selectively removed
`from the bottom of via hole 18 so that the area that is to be
`
`contacted (in this example, source/drain area 14, although
`other contacting areas such as the gate, another via, etc.
`could also have been contemplated) is now fully exposed.
`Selective removal of the silicon oxide or the silicon
`oxynitride layer was achieved by using a hydrogen bearing
`plasma such as trifluoromethane, difluoromethane, or
`
`It has been an object of the present invention to provide
`a borderless contact for use in a silicon integrated circuit.
`Another object has been that said contact be free of ,
`dislocations in the substrate at the interface between the
`contacting plug’s edge and the silicon surface that it con-
`tacts.
`
`A further object has been to provide a process for manu-
`facturing said borderless contact.
`These objects have been achieved by introducing a buffer
`layer betweenthe silicon surface and thesilicon nitride layer
`used as an etch stop layer during formation of the borderless
`contact. Suitable materials for the buffer layer that have been
`found include silicon oxide and silicon oxynitride. Experi-
`mental data confirming the effectiveness of the buffer layer
`are provided together with a process for its manufacture.
`
`60
`
`65
`
`

`

`US 6,444,566 Bl
`
`4
`3
`slowly by the via hole etchant than is the main oxide layer
`monofluoromethane, together with argon, oxygen and car-
`bon monoxide.
`through which the via hole is being formed.
`Finally, via hole 19 is. just filled with a suitable metal so
`While the invention has been particularly shown and
`as to form a plug that contacts the contacting area. Examples
`described with reference to the preferred embodiments
`of a suitable metal include aluminum and tungsten. The
`thereof, it will be understood by those skilled in the art that
`completed structure then has the appearance illustrated in
`various changes in form and details may be made without
`FIG. 3.
`departing from the spirit and scope of the invention.
`Whatis claimedis:
`Confirmation of the effectiveness of the present invention
`was obtained by experiment. In FIG. 4 we showaplot of
`1. A process for forming a borderless contact to a con-
`10
`lifetime (mean time to failure under worst case conditions)
`tacting area on a silicon surface, comprising the sequential
`as a function of 1 sub (substrate current) in micro-amps.
`steps of:
`Curve 41 is for borderless contacts made according to the
`teachings of the prior art whereas curve 42 is for borderless
`contacts in which a buffer layer of silicon oxynitride was
`inserted. By extrapolating back the lifetimes forthe priorart
`and invention-based devices can be read off the curve to be
`
`15
`
`;
`
`30
`
`40
`
`45
`
`0.166 and 0.612 years respectively, demonstrating an
`improvementof almost 4 times for the device made accord-
`ing to the present invention.
`FIG. 5 is a plot of the percentage of devices on a split
`condition as a function of V; (threshold voltage). Curve 51
`is for a device made according to the practices of the prior
`art while 52 and 53 are for devices in whichlayers ofsilicon
`oxynitride and silicon oxide, respectively, had been inserted
`between the silicon nitride etch stop layer and the contacting
`area. A wide range in the value of V; is undesirable because
`the device cannot then function as an efficient switch. As can
`be seen, such a spread is present for curve 51 but is greatly
`reduced for curves 52 and 53.
`
`FIG. 6 is a plot of devices on a split condition as a
`function of Isat (saturation current). Curve 61 is for a device
`made accordingto the practices of the prior art while 62 and
`63 are for devices in which layers of silicon oxynitride and
`silicon oxide, respectively, had been inserted between the
`silicon nitride etch stop layer and the contacting area. The
`extension of curve 61 to valuesofat less than about 2.1 mA
`
`indicates that the devices will have poor performance. As
`can be seen, this is not the case for curves 52 and 53.
`It should be noted that the substitution of silicon oxyni-
`tride for silicon oxide, as the buffer layer between silicon
`nitride and silicon, provides additional advantages beyond
`those associated with the conventional pad oxide that is
`practiced by the prior art:
`(1) Use of silicon oxynitride allows the thickness of the
`silicon nitride to be reduced to a greater extent than if a
`pure oxide layer is used for stress relief (as in the prior
`art). Reducing the thickness ofthe silicon nitride is greatly
`advantagcoussinceits diclectric constant is about 3 times
`that of the oxynitride, so even if the total thickness of the
`two layers remains unchanged,parasitic capacitance asso-
`ciated with these two layers will be reduced.
`(2) Reducing the silicon nitride thickness in this way is
`possible because, should the (thinner) silicon nitride layer
`be penetrated (i.e. not act as a perfect etch stop layer), the
`underlying silicon oxynitride layer can then act as a
`backup etch stop layer since it is attacked much more
`
`depositing a buffer layer of silicon oxynitride over said
`silicon surface, including said contacting area;
`depositing a layer of silicon nitride on said layer ofsilicon
`oxynitride;
`depositing a dielectric layer on said layer of silicon
`nitride;
`patterning and etching said dielectric layer to form a via
`hole, having a first bottom, that extends as far as said
`layer of silicon nitride;
`selectively removing all silicon nitride from the first
`bottom of the via hole,
`thereby forming a second
`bottom;
`selectively removing all silicon oxynitride from the sec-
`ond bottom of the via hole,
`thereby exposing the
`contacting area; and
`filling the via hole with a metal plug that contacts the
`contacting area.
`2. The process described in claim 1 wherein said contact-
`ing area is selected from the group consisting of source,
`drain, and gate.
`3. The process described in claim 1 wherein said layer of
`silicon oxynitride is deposited by means of PECVD to a
`thickness between about 50 and 400 Angsiroms.
`4. The process described in claim 1 wherein said layer of
`silicon nitride is deposited to a thickness between about 50
`and 400 Angstroms whereby parasilic capacitance is
`reduced.
`5. The process described in claim 1 wherein the step of
`selectively removingall silicon nitride fromthe first bottom
`of the via hole further comprises using a hydrogen bearing
`plasma selected from the group consisting of
`trifluoromethane,
`difluoromethane,
`and
`monofluoromethane, together with argon, oxygen and car-
`bon monoxide.
`
`6. The process described in claim 1 wherein the step of
`selectively removing all silicon oxynitride from the second
`bottom of the via hole further comprises using a hydrogen
`bearing plasma selected from the group consisting of
`trifluoromethane,
`difluoromethane,
`and
`monofluoromethane, together with argon, oxygen and car-
`bon monoxide.
`
`