United States Patent 19
`Wang
`
`(11) Patent Number:
`
`[45] Date of Patent:
`
`4,992,391
`Feb. 12, 1991
`
`[54] PROCESS FOR FABRICATING A CONTROL
`GATE FOR A FLOATING GATE FET
`
`[75]
`
`Inventor: Hsingya A. Wang, San Jose, Calif.
`
`{73] Assignee: Advanced Micro Devices, Inc.,
`Sunnyvale, Calif.
`
`[21] Appl. No.: 442,903
`
`{22} Filed:
`
`Nov..29, 1989
`
`[51] Unt. C15 ec ccececcsceeecseseseceserseeee HOI1L 21/336
`[52] US. CL. oececeetsesssesesessneenes 437/43; 437/193,
`437/200
`................. 437/200, 43, 193, 192,
`[58] Field of Search.
`437/40, 41, 42, 50; 357/71, 67, 14; 148/DIG.
`17, DIG. 147
`
`[56]
`
`References Cited
`U.S. PATENT DOCUMENTS
`
`5/1975 Nuttall etal. ww... 148/DIG. 147
`3,881,242
`4,128,670 12/1978 Gaensslen......
`w. 357/71
`
`4,373,251
`2/1983 Wilting ..........
`« 437/200
`4,389,257
`6/1983 Geipel, Jr. et al.
`DIG. 147
`4,403,394 9/1983 Shepard et al... 437/193
`
`ceeseeeeee 437/200
`4,640,844 2/1987 Neppl et al. oe
`4,740,479 4/1988 Nepplet al. o.....cccsscsccsssseee 437/200
`
`FOREIGN PATENT DOCUMENTS
`
`.......see 437/200
`0160965 11/1985 European Pat. Off.
`2077993 12/1981 United Kingdom................ 437/200
`
`Primary Examiner—Olik Chaudhuri
`Assistant Examiner—T. N. Quach
`Attorney, Agent, or Firm—Fliesler, Dubb, Meyer &
`Lovejoy
`_ ABSTRACT
`[57]
`A process of forminga floating gate field-effect transis-
`tor having a multi-layer control gate line is disclosed.
`The multi-layer control gate line includes a first
`polysilicon layer, a silicide layer provided on thefirst
`polysilicon layer, and a second polysilicon layer pro-
`vided on thesilicide layer. The first and second polysili-
`con layers are formed as undoped polysilicon to im-
`prove the adhesion of the polysilicon layers to the sili-
`cide layers sandwiched therebetween. After all three
`layers are formed,the polysilicon layers are doped in an
`environment
`including POC13. Because the first and
`second polysilicon layers are formed as undopedlayers,
`all three layers of the control gate line may be formed
`using a single pump-down.
`
`15 Claims, 3 Drawing Sheets
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`Page | of 8
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`Samsung Exhibit 1010
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`Page 1 of 8
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`Samsung Exhibit 1010
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`U.S. Patent
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`Feb, 12, 1991
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`‘Sheet 1 of 3
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`4,992,391
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`U.S. Patent
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`Feb. 12, 1991
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`Sheet 2 of 3
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`4,992,391
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`Sheet 3 of 3
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`Feb. 12, 1991
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`4,992,391 FIGURE 7
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`US. Patent
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`Page 4 of 8
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`1
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`4,992,391
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`2
`strate in the buried contact region as the waferis in-
`serted into a hot furnace tube will ruin a die.
`
`SUMMARYOF THE INVENTION
`
`PROCESS FOR FABRICATING A CONTROL GATE
`FOR A FLOATING GATE FET
`
`BACKGROUNDOF THE INVENTION
`
`5
`
`It is therefore, an object of the present invention to
`provide an improved method offabricating a floating
`1. Field of the Invention
`gate field effect transistor.
`The present invention relates to processes for fabri-
`A further object of the present invention is to provide
`cating semiconductor devices; more particularly, pro-
`a method offabricating a floating gate FET having a
`cesses for fabricating control gate lines for floating gate
`multi-layer control gate including a highly doped
`field effect transistors.
`polysilicon layer adjacent to the inter-gate oxide.
`2. Description of the Related Art
`Anotherobject of the present invention is to provide
`The gate structure of a conventional floating gate
`a method offabricating a floating gate FET having a
`field effect transistor (FET) includes a gate oxide layer
`multi-layer control gate which improves the adhesion
`provided on a substrate, a floating gate provided on the
`of a silicide layer to an underlying polysilicon layer.
`gate oxide layer, and a control gate separated from the
`Another object of the present invention is to provide
`floating gate by an inter-gate oxide layer. The control
`a method of fabricating a multi-layer conductive line
`gate has conventionally been formed of a polysilicon
`with a single vacuum chamber pump down.
`layer or a polysilicon layer withasilicide layer overly-
`A process for fabricating a floating gate field-effect
`20
`ing the polysilicon layer. The control gate is usually
`transistor in accordance with the present
`invention
`comprises the steps of (a) providing a gate oxide on the
`fabricated with a polysilicon layer adjacent to the inter-
`substrate, (b) providing a floating gate line on the gate
`gate oxide in order to maintain the device characteris-
`oxide, (c) providing an intergate oxide layer overlying
`tics provided by a polysilicon gate.
`the gate oxide and the floating gate line, (d) providing
`The desire to increase the speed and to reduce the
`25
`control gate layers, including a first undoped polysili-
`power consumption of semiconductor devices has
`con layer overlying the intergate oxide layer,asilicide
`prompted the use of multi-layer structures, including a
`layer overlying the first polysilicon layer, and a second
`silicide layer overlying the polysilicon layer, to take
`undoped polysilicon layer overlying thesilicide layer,
`advantageof the lowerresistivity of the silicide. Several
`(e) annealing the control gate layers in an environment
`problemsare associated with forminga silicide layer on
`including POC, (f) etching the control gate layers to
`a polysilicon layer. One such problem is that the doping
`form a control gate line, (g) etching the floating gate
`level of the polysilicon must be low to insure that the
`line using the control gate line as a mask to form a
`silicide will adhere to the polysilicon. Poor adhesion
`floating gate, and (h) implanting source and drain re-
`results in silicide lift-off and device failure. Doping
`gions using the control gate line as a mask.
`levels up to approximately 5x 10!9 cm~3 have been
`utilized; however, greater doping levels increase the
`BRIEF DESCRIPTION OF THE DRAWINGS
`probability of device failures beyond acceptable limits.
`Doping levels below 5X 10!9 cm—3 for the polysilicon
`layer create a large resistivity and power consumption
`and reduce speed. Further, since polysilicon is usually
`doped with an N-type dopant,
`in the fabrication of
`CMOSdevices, the low doping level of the polysilicon
`layer allows P-type dopants (used to form the source
`and drain regions in P-channel devices) to neutralize, or
`invert, the doping (or conductivity type) of the polysili-
`con layer. An inversion of the conductivity of the
`polysilicon layer from N-type to P-type doping radi-
`cally changes the threshold voltage (V2 of the device.
`A further problem associated with the formation of a
`multi-layer control gate is that the device must be re-
`moved from the furnace tube, or vacuum chamber,after
`the deposition of the polysilicon layer to allow the
`polysilicon layer to be doped before thesilicide layeris
`deposited. Each time the device is removed from the
`furnace tube one of two problemsarise. The cooling of
`the furnace tube to insert the wafers causes the polysili-
`con accumulated on the tube walls to warp or break the
`furnace tube due to the divergent coefficients of ther-
`mal expansion of polysilicon and quartz. Alternatively,
`if the tube is maintained at a high temperature and the
`wafers are inserted into a hot tube thereis a high risk of
`wafer oxidation, even if a flow of an inert gas is pro-
`vided, which causes yield problems.
`The problem of oxidation is more severe if buried
`contacts. are formed. Buried contacts require the re-
`moval of the inter-gate oxide and the gate oxide in the
`region where the buried contact is to be formed. This
`leaves the substrate exposed and oxidation of the sub-
`
`FIGS. 1-4 are cross-sectional views useful for de-
`scribing the process of the present invention;
`FIG.5A is a cross-sectional view along line 5A—5A
`in FIG.6 useful in describing the process of the present
`invention;
`FIG.5B is a cross-sectional view along line 53—5B
`in FIG. 6 useful in describing an alternative embodi-
`ment of the process of the present invention;
`FIG.6 is a simplified plan view of a semiconductor
`device fabricated in accordance with the process of the
`present invention; and
`FIG.7 is a simplified plan view useful in describing
`the process of the present invention.
`DESCRIPTION OF THE PREFERRED
`EMBODIMENT(S)
`The present invention will be described with refer-
`ence to FIGS.1-7. The process of the present invention
`is particularly useful and is described belowin thefabri-
`cation offloating gate field effect transistors. However,
`the process of the present invention is also applicable to
`the formation of any conductive line for a semiconduc-
`tor device in either a bipolar or an MOSprocess. For
`example, the process of the present invention may be
`used to fabricate gate structures for non-floating gate
`field effect transistors or conductive lines for bipolar
`devices.
`With reference to FIG.1, the process of the present
`invention begins with a substrate 10 which is thermally
`oxidized to form a gate oxide 12. Alternatively, the gate
`oxide 12 may be a deposited oxide; however, thermal
`oxides are considered to be higher-quality oxides more
`
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`4,992,391
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`35
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`4
`3
`polysilicon layer 22 using a single pump-down cycle
`suitable for use as a gate oxide. Then,field oxide regions
`because the device is not required to be removed from
`(not shown)are provided to define the active regions
`where individual
`field effect
`transistors would be
`the vacuum chamber used to deposit these layers in
`formed.
`order to dopethe individual layers as they are formed.
`After polysilicon layers 18 and 22 are doped, a cap-
`A floating gate material layer 14 is provided over
`ping oxide layer is formed overpolysilicon layer 22. In
`gate oxide 12. In the preferred embodimentofthe pres-
`the preferred embodiment, capping oxide layer 24 is a
`ent invention floating gate material layer 14 is formed of
`thermal oxide having a thickness of approximately 1,000
`polysilicon. The floating gate material
`layer 14 may
`A, formed by oxidation in an atmosphere including dry
`have athickness ranging from approximately 1,000 to
`oxygen and HCl at a temperature of approximately 900°
`3,000 A, and is approximately 1,500 A in the preferred
`C. for a period of approximately fifty (50) minutes.
`embodiment. Thefloating gate material layer 14 is then
`The etching of the control gate layers, 18, 20, 22 and
`doped by annealing the device in an atmosphere com-
`oxide layer 24 to form control gate lines will be de-
`prising phosphorous oxychloride (POCI3). This anneal
`scribed with reference to FIG. 3. A photo-resist layer
`is conducted for a time sufficient to provide floating
`(not shown) is formed on oxide layer 24, and is then
`gate material layer 14 with a doping concentration of
`approximately 1x 1020 cm—3. In the preferred embodi-
`patterned using a conventionallift-off process so that
`the photo-resist remains on the portions of the control
`ment, the POC]; concentration is approximately 0.1%,
`gate layers and oxide layer 24 which will form control
`and the device is annealed at a temperature of approxi-
`gate lines. Then, oxide layer 24 is etched using an etch-
`mately 875° C. for approximately fifteen (15) minutes.
`ant which is. effective for silicon oxide, and subse-
`Thereafter, floating gate material layer 14 is etched to
`quently polysilicon layer 18, silicide layer 20, and
`form floating gate lines 14 as shown in the simplified
`polysilicon layer 22 are etched using an etchant whichis
`plan view of FIG.7.
`effective for etching polysilicon. Because etchants
`An inter-gate oxide layer 16 is provided over gate
`whichare effective for etching polysilicon are generally
`oxide 12 and floating gate lines 14. In the preferred
`not selective for silicon oxide, intergate oxide layer 16
`embodiment, intergate oxide layer 16 is a 200 A thermal
`serves as an etch-stop layer. This etching process forms
`oxide grown by annealing the device at approximately
`control gate lines 26 (FIG. 6). The relationship of a
`1100° C. for approximately ten minutes in an environ-
`floating gate line 14 and a control gate line 26 is shown
`ment
`including dry oxygen and HCl. Alternatively,
`in the plan view of FIG. 7. The sectional view of FIG.
`intergate oxide 16 may be a deposited oxide.
`3 is in the direction of arrow A in FIG.7.
`The formation of the layers which ultimately form
`With reference to FIG.4, intergate oxide layer 16 is
`the control gate lines will be described with reference to
`etched using the contro!gate line 26 as a mask, and then
`FIG.2. First, an undoped polysilicon layer 18 havinga
`thickness ranging approximately from 50 to 5,000A,
`the portions offloating gate lines 14 which do not un-
`derlie contro] gate line 26 are removed by etching; the
`2,000 A in the preferred embodiment, is provided over
`portionsofthe floating gate line which are removed by
`intergate oxide 18. Polysilicon layer 18 is formed as an
`etching are designated 15; and 152 in FIG. 7. The etch-
`undoped layer using conventional deposition tech-
`ing of floating gate line 14 to formafloating gate 114
`niques. Then,a silicide layer 20 is provided on polysili-
`completes the fabrication of gate structure 28. FIG. 5A,
`con layer 18. Thesilicide may be selected from the
`which corresponds to a view in the direction of arrow
`group including TaSiz, WSiz, TiSiz, and MoSiz; WSi2,
`B in FIG. 7, showsfloating gate 114 under inter-gate
`the preferred silicide, is deposited, for example, in an
`oxide 16 and control gate line 26 Gncluding layers 18,
`environment including SiH2Cl2 and WF¢ at a tempera-
`20, and 22). Gate structure 28 is then used as a mask to
`ture of approximately 600° C. The thickness ofsilicide
`implant self-aligned source and drain regions 36, 38.
`layer 20 may range from approximately 500 to 5,000 A;
`Then, the source/drain implant is driven and a thick
`in the preferred embodimentsilicide layer 20 is a thick-
`ness of approximately 2,000 A. An undopedpolysilicon
`thermal oxide (not shown)is grownonthesides of gate
`structure 28 to electrically insulate the floating gates
`layer 22 is then provided oversilicide layer 20. The
`114. The fabrication ofthe field-effect transistor is com-
`thickness of
`polysilicon layer 22 may be approximately
`pleted by providing metallization and passivation layers
`50 to 2,500 A, with the preferred embodiment having a
`in accordance with conventional techniques.
`thickness of approximately 1,000 A.
`Theutilization of the present invention to form float-
`Polysilicon layers 18 and 22 are formed as undoped
`ing gate field effect transistors having buried contacts
`polysilicon in order to improve the adhesion of these
`will be described with reference to FIGS. 5B and 6. As
`layers to silicide layer 20. After the three control gate
`shownin FIG.6, one example of a buried contact is an
`layers, including polysilicon layer 18, silicide layer 20,
`extension 27 of control gate line 262 which contacts the
`and polysilicon layer 22, are formed, polysilicon layers
`drain region 38; of a field effect transistor formed on
`18 and 22 are doped by annealing the device in a POCI3
`environment. The desired impurity concentration (dop-
`adjacent control gate line 26;. A simplified cross-sec-
`tional view ofa floating gate field effect transistor hav-
`ing level) in polysilicon layers 18 and 22 is greater than
`approximately 5x 10!9 cm~3 and in the preferred em-
`ing a buried contact is shownin the cross-sectional view
`bodiment the doping level is approximately 3—5 x 1020
`of FIG.5B, taken along line 5B—5B in FIG.6. In order
`cm—3, In the preferred embodiment, polysilicon layers
`to form buried contact 40, a portion of intergate oxide
`18 and 22 are doped in an environment including a
`16 and gate oxide 12 are removed byetching prior to
`the formation of the control gate material layers. This
`nitrogen carrier, approximately 0.1% POCI3, and ap-
`proximately 5% oxygen. The anneal is performed at
`etching is performed by providing a photo-resist layer,
`which is patterned using conventional
`lift-off tech-
`approximately 875° C. for approximately thirty (30)
`niques so that only the buried contact regions are ex-
`minutes. The doping of polysilicon layer 18 is not ad-
`posed. Polysilicon layer 18, silicide layer 20, and
`versely affected by the presenceofsilicide layer 20.
`polysilicon layer 22 are then formed in accordance with
`In accordancewith the present inventionit is possible
`the process described above. The use of a load lock
`to form polysilicon layer 18, silicide layer 20, and
`
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`5
`chamberis particularly useful for providing the control
`gate layers when buried contacts are formed so that
`oxidation of the substrate in the region of buried contact
`40 is prevented.
`:
`The disclosed embodiments of the present invention
`are intendedto be illustrative and not restrictive, and
`the scope of the invention is defined by the following
`claims rather than by the foregoing description.
`I claim:
`1. A process for fabricating a control gate line for a
`floating gate field effect transistor formed in a semicon-
`ductor substrate, comprising the stepsof:
`(a) providing a floating gate overlying the substrate;
`(b) providing an inter-gate oxide overlying thefloat-
`ing gate;
`(c) providing a first undoped polysilicon layer over-
`lying the inter-gate oxide;
`(d) providing a silicide layer overlying the first
`polysilicon layer;
`(e) providing a second undoped polysilicon layer
`overlying the silicide layer;
`(f) dopingthefirst and second polysilicon layersafter
`said steps (d) and (e); and
`the silicide
`(g) etching the first polysilicon layer,
`layer and the second polysilicon layer to form a
`conductive line after said step (f).
`2. A process according to claim 1, wherein said step
`(f) comprises annealing the first and second polysilicon
`layers in an environment including POCI3.
`3. A process according to claim 1, wherein said step
`(f) comprises concurrently doping the first and second
`polysilicon layers.
`4. A process according to claim 1, wherein said step
`(f) comprises providing the first and second polysilicon
`layers with a doping concentration of at least approxi-
`mately 5x 10!9 cm—3.
`5. A process according to claim 1, wherein said step
`(f) comprises providing the first and second polysilicon
`layers with a doping concentration of greater than ap-
`proximately 1x 1020 cm~—3.
`6. A process according to claim 1, wherein said step
`(f) comprises providing the first and second polysilicon
`layers with a doping concentration of approximately
`3-5 x 1020 cem—3.
`7. A process for fabricating a field-effect transistor,
`comprising the sequentialstepsof:
`(a) providing a gate oxide on the substrate;
`(b) providing a floating gate line on the gate oxide;
`(c) providing an intergate oxide layer overlying the
`gate oxide and the floating gate line;
`(d) providing control gate layers, including a first
`undoped polysilicon layer overlying the intergate
`oxide layer, a silicide layer overlying the first
`polysilicon layer, and a second undoped polysili-
`con layer overlying thesilicide layer;
`(e) annealing the control gate layers in an environ-
`ment including ROCI3;
`(f) providing a capping oxide layer overlying the
`control gate layers;
`(g) etching the control gate layers to form a control
`gate line;
`(h) etching the floating gate line using the capping
`oxide layer and the control gate line as a mask to
`form a floating gate; and
`implanting source and drain regions using the
`control gate line as a mask.
`8. A process according to claim 7, wherein said step
`(e) comprises providing the first and second polysilicon
`
`@)
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`4,992,391
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`layers with a doping concentration of at least 5x 1020
`em-3,
`9. A process according to claim 7, wherein said step
`(e) comprises providing the first and second polysilicon
`layers with a doping concentration of greater than ap-
`proximately 1x 1020 cm-3,
`10. A process according to claim 7, wherein said step
`(e) comprises providing the first and second polysilicon
`layers with a doping concentration of approximately
`3-5 x 10230 cem—3.
`11. A process for fabricating an integrated circuit
`having a plurality of transistors including at least one
`floating gate field-effect transistor formedin a substrate,
`comprising of the steps of:
`(a) providing a gate oxide on the substrate;
`(b) providing floating gate lines on the gate oxide;
`(c) providing an intergate oxide layer overlying the
`gate oxide and the floating gatelines;
`(d) removing selected portions of the gate oxide and
`the intergate oxide corresponding to the positions
`of buried contacts;
`,
`(e) providing control gate layers,
`including a first
`undopedpolysilicon layer overlying the intergate
`oxide layer and and contacting the substrate in the
`regions where the gate oxide and intergate oxide
`are remove,, a silicide layer overlying the first
`polysilicon layer, and a second undopedpolysili-
`con layer overlying thesilicide layer;
`(f) annealing the control gate layers in an environ-
`ment including POCI3;
`(g) thermally oxidizing the second polysilicon layer
`to form a capping oxide;
`(h) etching the capping oxide and the control gate
`layers to form control gate lines and buried
`contacts;
`(i) etching the floating gate lines using the capping
`oxide and the control gate line as a mask to form
`floating gates underlying the control gate lines; and
`implanting source and drain regions using the
`capping oxide and the control gate lines as masks.
`12. A process for fabricating a floating gate field-
`effect transistor (FET) on a substrate, comprising the
`sequential steps of:
`(a) providing a gate oxide overlying the substrate;
`(b) providing a first polysilicon layer overlying the
`gate oxide layer;
`(c) annealing the first polysilicon layer in an environ-
`ment including POCI3;
`(d) etching thefirst polysilicon layer to form floating
`gate lines;
`(e) providing an inter-gate oxide layer overlying the
`floating gate lines and the gate oxide;
`(f) placing the substrate in a vacuum chamber and
`reducing the pressure in the vacuum chamber;
`(g) providing control gate material layers overlying
`the intergate oxide layer, the control gate material
`layers including a second undoped polysilicon
`layer, a silicide layer overlying the second polysili-
`con layer and a third undoped polysilicon layer
`overlying the silicide layer, without breaking the
`vacuum formedin said step (f);
`(h) annealing the substrate in an environment includ-
`ing POC13 to provide the secondandthird polysili-
`con layers with a doping concentration greater
`than approximately 1x 102° cm—3;
`(i) thermally oxidizing the third polysilicon layer to
`form a capping oxide layer;
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`4,992,391
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`said step (d) comprises:
`(1) providing a first undoped polysilicon layer
`overlying the inter-gate oxide layer,
`(2) providing a silicide layer overlying the first
`polysilicon layer, and
`(3) providing a second undopedpolysilicon layer
`overlying the silicide layer; and
`the first and second polysilicon layers are doped
`after said step (d) and before said step (e).
`14. A process according to claim 13, further charac-
`terized in that the first undoped polysilicon layer, the
`silicide layer and the second polysilicon layer provided
`in said step (d) are provided in a sealed vacuum cham-
`ber without breaking the seal.
`15. A process according to claim 13, further charac-
`terized that said step (d) further comprises (4) providing
`the first and second polysilicon layer with a doping
`concentration greater
`than approximately 1x 1020
`cm—3,
`*
`x
`*
`*
`
`*
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`10
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`20
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`25
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`30
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`35
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`45
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`50
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`(1)
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`7
`(j) etching the capping oxide layer, the control gate
`material layers, and the inter-gate oxide layer to
`form control gate lines;
`.
`(k) etching the floating gate lines using the cappin
`oxide and the control gate lines as masks to form
`floating gates; and
`implanting source and drain regions using the
`control gate lines as masks.
`13. An improved process for fabricating a floating
`gate transistor in a substrate including the steps of (a)
`providing a gate oxide layer overlying the substrate, (b)
`providing a floating gate material layer overlying the
`gate oxide, (c) providing an inter-gate oxide layer over-
`lying the floating gate material
`layer, (d) providing
`control gate material
`layers overlying the inter-gate
`oxide layer (e) etching the control gate material layer to
`form a control gate and (f) etching the floating gate
`material layer to form a floating gate, characterized in
`that:
`
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`Page 8 of 8
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