Paper 7
`Trials@uspto.gov
`Entered: February 24, 2016
`
`571-272-7822
`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________
`
`LAM RESEARCH CORP.,
`Petitioner,
`
`v.
`
`DANIEL L. FLAMM,
`Patent Owner.
`____________
`
`Case IPR2015-01768
`Patent RE 40,264 E
`
`
`Before DONNA M. PRAISS, CHRISTOPHER L. CRUMBLEY, and
`JO-ANNE M. KOKOSKI, Administrative Patent Judges.
`
`PRAISS, Administrative Patent Judge.
`
`
`DECISION
`Institution of Inter Partes Review
`37 C.F.R. § 42.108
`
`Page 1 of 30
`
`Samsung Exhibit 1015
`
`
`Trials@uspto.gov
`Entered: February 24, 2016
`
`571-272-7822
`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________
`
`LAM RESEARCH CORP.,
`Petitioner,
`
`v.
`
`DANIEL L. FLAMM,
`Patent Owner.
`____________
`
`Case IPR2015-01768
`Patent RE 40,264 E
`
`
`Before DONNA M. PRAISS, CHRISTOPHER L. CRUMBLEY, and
`JO-ANNE M. KOKOSKI, Administrative Patent Judges.
`
`PRAISS, Administrative Patent Judge.
`
`
`DECISION
`Institution of Inter Partes Review
`37 C.F.R. § 42.108
`
`Page 1 of 30
`
`Samsung Exhibit 1015
`
`
`
`IPR2015-01768
`Patent RE 40,264 E
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`
`Lam Research Corp. (“Petitioner”) filed a Petition (Paper 1, “Pet.”) to
`institute an inter partes review of claims 51, 55–63, 68, 70, and 71 of U.S.
`Patent No. RE 40,264 E (Ex. 1001, “the ’264 patent”) pursuant to 35 U.S.C.
`§§ 311–319. A Preliminary Response (Paper 6, “Prelim. Resp.”) was filed
`by Daniel L. Flamm (“Patent Owner”).
`We have jurisdiction under 35 U.S.C. § 314, which provides that an
`inter partes review may be authorized only if “the information presented in
`the petition . . . and any [preliminary] response . . . shows that there is a
`reasonable likelihood that the petitioner would prevail with respect to at
`least 1 of the claims challenged in the petition.” 35 U.S.C. § 314(a).
`Petitioner challenges claims 51, 55–63, 68, 70, and 71 of the ’264
`patent under 35 U.S.C. § 103(a). Pet. 12–60. We institute an inter partes
`review as to claims 51, 55–63, 68, 70, and 71 as discussed below.
`
`
`BACKGROUND
`I.
`Related Proceedings
`A.
`The ’264 patent is the subject of concurrently-filed inter partes review
`proceedings IPR2015-01759, IPR2015-01764, and IPR2015-01766.
`We are informed that the ’264 patent is presently at issue in a
`declaratory judgment action captioned Lam Research Corp. v. Daniel L.
`Flamm, Case 5:15-cv-01277-BLF (N.D. Cal.) and in an infringement action
`captioned Daniel L. Flamm v. Samsung Electronics Co., Ltd., et al., Case
`1:15-cv-613 (W.D. Tex.). Pet. 3; Paper 4, 1.
`
`
`
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`
`The ’264 Patent (Ex. 1001)
`B.
`The ’264 patent, titled “Multi-Temperature Processing,” is directed to
`a method “for etching a substrate in the manufacture of a device,” where the
`method “provide[s] different processing temperatures during an etching
`process or the like.” Ex. 1001, Abstract. The apparatus used in the method
`is shown in Figure 1 below.
`
`
`Figure 1 depicts a substrate (product 28, such as a wafer to be etched) on a
`substrate holder (product support chuck or pedestal 18) in chamber 12 of
`plasma etch apparatus 10.
`
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`Figures 6 and 7, below, depict a temperature-controlled substrate
`holder and temperature control systems.
`
`
`
`Figures 6 and 7 depict temperature-controlled fluid flowing through
`substrate holder (600, 701), guided by baffles 605, where “the fluid [is] used
`to heat or cool the upper surface of the substrate holder.” Id. at 14:62–63;
`16:5–67. Figure 6 also depicts heating elements 607 underneath substrate
`holder 600 where “[t]he heating elements can selectively heat one or more
`zones in a desirable manner.” Id. at 15:10–26. Referring to Figure 7, the
`temperature control operation is described as follows:
`The desired fluid temperature is determined by comparing the
`desired wafer or wafer chuck set point temperature to a
`measured wafer or wafer chuck temperature . . . . The heat
`exchanger, fluid flow rate, coolant-side fluid temperature,
`heater power, chuck, etc. should be designed using
`conventional means to permit the heater to bring the fluid to a
`
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`setpoint temperature and bring the temperature of the chuck and
`wafer to predetermined temperatures within specified time
`intervals and within specified uniformity limits.
`Id. at 16:36–39 and 50–67.
`An example of a semiconductor substrate to be patterned is shown in
`Figure 9, below.
`
`
`Figure 9 depicts substrate 901 having a stack of layers including oxide layer
`903, polysilicon layer 905, tungsten silicide layer 907, and photoresist
`masking layer 909 with opening 911 from the treatment method shown in
`Fig. 10 below. Id. at 17:58–18:57.
`
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`Figure 10 depicts the tungsten silicide layer being etched between points B
`and D at a constant temperature; the polysilicon layer being exposed
`between points D and E; the polysilicon layer being etched at a constant
`temperature beyond point E; and the resist being ashed beyond point I. Id. at
`18:58–19:64. The plasma’s optical emission at 530 nm is monitored to
`determine when there is breakthrough to the polysilicon layer (Point D) and
`
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`a lower etch temperature is required to etch the polysilicon layer (Point E).
`Id. at 19:8–24.
`
`
`Illustrative Claim
`C.
`Claims 51, 56, and 60 are the only independent claims of the ’264
`patent challenged in the Petition. Claim 51, reproduced below, is illustrative
`of the claims at issue:
`51. A method of processing a substrate in the manufacture of
`a device, the method comprising:
`placing a substrate having a film thereon on a substrate
`holder in a processing chamber; the processing chamber
`comprising the substrate holder, a substrate control circuit
`operable to adjust the substrate temperature, a substrate holder
`temperature sensor, and a substrate holder control circuit
`operable to maintain the substrate holder temperature;
`performing a first etching of a first portion of the film at
`a selected first substrate temperature;
`performing a second etching of a second portion of the
`film at a selected second substrate temperature, the second
`temperature being different from the first temperature;
`wherein at least one of the film portions is etched while
`heat is being transferred to the substrate holder with the
`substrate holder control circuit; and
`the substrate temperature control circuit effectuates the
`change from the first substrate temperature to the second
`substrate temperature within a preselected time period.
`Ex. 1001, 24:4–26.
`Claim 56 is directed to a method for processing layers which are
`included in a stack of layers positioned on a substrate. Id. at 24:40–61.
`Claim 56 recites “wherein the substrate holder is heated to a temperature
`operable to maintain at least one of the selected first and the selected second
`
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`substrate temperatures above 49°C,” and “a preselected time period that is
`less than the overall process time associated with the etching the first
`silicon-containing layer and the second silicon-containing layer.” Id. at
`24:52–55, 24:58–61. Claim 60 is directed to a method for manufacturing a
`device comprising an integrated circuit. Id. at 25:9–31. Claim 60 recites “a
`stack of layers including a silicide layer,” “processing the substrate . . . at a
`second substrate temperature to etch at least a portion of the silicide layer,”
`and “the first substrate temperature is changed to the second substrate
`temperature with a substrate temperature control circuit within a preselected
`time to etch the silicide layer.” Id. at 25:11–12, 25:23–25, 25:28–31.
`
`Date
`Nov. 28,1990
`Sept. 29, 1992
`Apr. 3, 1990
`July 14, 1987
`June 15, 1993
`
`Exhibit
`1002
`1003
`1004
`1005
`1006
`
`The Prior Art
`D.
`Petitioner relies on the following prior art:
`Reference
`Publication
`Tegal
`EP 0 399 676 A1
`Matsumura
`US 5,151,871
`Narita
`US 4,913,790
`Thomas
`US 4,680,086
`Wang ’485
`US 5,219,485
`Etching of Tungsten and Tungsten
`Silicide Films by Chlorine Atoms,
`J. ELECTROCHEM. SOC. 135(8)
`2016–2019
`1008
`Feb. 12, 1991
`US 4,992,391
`Wang ’391
`1009
`Dec. 29, 1992
`US 5,174,856
`Hwang
`1013
`Feb. 24, 1987
`US 4,645,218
`Ooshio
`Petitioner also relies on the Declaration of Joseph L. Cecchi, Ph.D., dated
`August 18, 2015 (“Cecchi Declaration” Ex. 1010), American Heritage
`
`Fischl
`
`Aug. 1988
`
`1007
`
`
`
`8
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`Dictionary, Third Edition, 1993 (Ex. 1011), and Merriam-Webster’s
`Dictionary, Tenth Edition, 1993 (Ex. 1012).
`
`The Asserted Grounds
`E.
`Petitioner challenges claims 51, 55–63, 68, 70, and 71 of the ’264
`patent on the following grounds:
`Claims Challenged
`Basis
`56–58
`§ 103(a)
`
`60, 62, 63, and 71
`
`§ 103(a)
`
`51, 55, and 68
`
`56 and 59
`
`61
`
`70
`
`§ 103(a)
`
`§ 103(a)
`
`§ 103(a)
`
`§ 103(a)
`
`Reference(s)
`Tegal, Matsumura, Narita, Thomas,
`and Wang ’485
`Tegal, Matsumura, Narita, Thomas,
`and Fischl
`Tegal, Matsumura, Narita, and
`Thomas
`Tegal, Matsumura, Narita, Thomas,
`Wang ’485, and Wang ’391
`Tegal, Matsumura, Narita, Thomas,
`Fischl, and Ooshio
`Tegal, Matsumura, Narita, Thomas,
`Fischl, and Hwang
`
`Claim Construction
`F.
`Before proceeding with claim construction, we must determine the
`proper standard to apply. Petitioner contends that the claims of the ’264
`patent should be given their broadest reasonable construction. Pet. 9. That
`standard, however, is applicable only to unexpired patents. See 37 C.F.R.
`§ 42.100(b) (“A claim in an unexpired patent shall be given its broadest
`reasonable construction in light of the specification of the patent in which it
`appears.”).
`The term of a patent grant begins on the date on which the patent
`issues and ends 20 years from the date on which the application for the
`patent was filed in the United States “or, if the application contains a
`specific reference to an earlier filed application or applications under section
`9
`
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`120, 121, or 365(c) of this title, from the date on which the earliest such
`application was filed.” 35 U.S.C. § 154(a)(2) (2002). The earliest patent
`application referenced for the benefit of priority under 35 U.S.C. § 120, for
`the ’264 patent, was filed on December 4, 1995, and the patent has no term
`extensions. The term of the ’264 patent, thus, expired no later than
`December 4, 2015.
`Because, on this record, we conclude that the term of the ’264 patent
`expired subsequent to the filing of the Petition and the Preliminary
`Response, but prior to the end of an inter partes review, for purposes of this
`Decision we treat the patent as expired. For claims of an expired patent, the
`Board’s claim interpretation is similar to that of a district court. See In re
`Rambus Inc., 694 F.3d 42, 46 (Fed. Cir. 2012). “In determining the meaning
`of the disputed claim limitation, we look principally to the intrinsic evidence
`of record, examining the claim language itself, the written description, and
`the prosecution history, if in evidence.” DePuy Spine, Inc. v. Medtronic
`Sofamor Danek, Inc., 469 F.3d 1005, 1014 (Fed. Cir. 2006) (citing Phillips
`v. AWH Corp., 415 F.3d 1303, 1312–17 (Fed. Cir. 2005) (en banc)). There
`is, however, a “‘heavy presumption’” that a claim term carries its ordinary
`and customary meaning. CCS Fitness, Inc. v. Brunswick Corp., 288 F.3d
`1359, 1366 (Fed. Cir. 2002).
`Petitioner proposes constructions for the claim terms “portion of the
`film” (claims 51 and 68), “portion of . . . layer” (claims 56, 59, and 60),
`“preselected time period” (claims 51, 55, and 56), “preselected time” (claim
`60), and “selected time period” (claim 61). Pet. 9–11. Patent Owner does
`not dispute the proposed claim constructions.
`
`
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`Based on the current record, we are not persuaded that express
`construction of any term is necessary in order to resolve the disputes
`currently before us. Thus, for purposes of this Decision, we discern no need
`to provide any express constructions. Vivid Techs., Inc. v. Am. Sci. & Eng’g,
`Inc., 200 F.3d 795, 803 (Fed. Cir. 1999) (“[O]nly those terms need be
`construed that are in controversy, and only to the extent necessary to resolve
`the controversy.”).
`
`
`II. ANALYSIS
`We turn now to Petitioner’s asserted grounds of unpatentability under
`35 U.S.C. § 103(a) to determine whether Petitioner has met the threshold
`standard of 35 U.S.C. § 314(a). We begin with a description of Tegal,
`Matsumura, Narita, and Thomas, which are asserted in each ground argued
`in the Petition.
`
`A.
`
`Prior Art References
`1.
`Tegal
`Tegal “relates to plasma etch processes for the manufacture of
`semiconductor wafers . . . .” Ex. 1002, 1:4–5. Figure 1, below, is a
`schematic for etching a silicon oxide layer at two temperatures in the same
`chamber.
`
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`Figure 1 depicts plasma reactor 10 with a chamber having a substrate (wafer
`15) on a substrate holder (electrode 13 with plurality of tines 16). Id. at
`2:52–3:7. The plasma reactor “performs different types of etch, requiring
`different temperatures, in a single reactor” on the substrate. Id. at 1:43–48.
`For example, “a tapered etch can be performed in oxide through a patterned
`photoresist” by a first etching at 80°C for an isotropic etch, followed by a
`second etching at 10°C–40°C for an anisotropic etch. Id. at 5:5–45.
`Figure 1 also depicts two reservoirs of water maintained at 10°C and
`80°C to control the temperature of the substrate holder and substrate. The
`10°C and 80°C waters are mixed, using taps 47 and 44, and delivered to the
`substrate holder (electrode 13 with plurality of tines 16) at the desired
`temperature. The return water from the substrate holder is recirculated back
`to the reservoirs, remixed with hot or cold water to the desired temperature,
`and recirculated to the substrate holder. The valves that interconnect the
`
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`reservoirs to the substrate holder “may be individually actuated
`electronically.” Id. at 3:36–4:32.
`Figure 1 further depicts controlling substrate (wafer) temperature
`using “an external source of helium gas to the underside of wafer 15 through
`one or more channels, not shown, in the upper surface of electrode 13. As
`known per se in the art, this provides better thermal coupling between wafer
`15 and electrode 13.” Id. at 3:4–26. The passageways in the substrate
`holder (electrode 13 with plurality of tines 16) for water “are separate from
`the passageways conveying helium from port 19.” Id. at 3:15–26.
`While Tegal provides the example of “etching an oxide layer on a
`semiconductor wafer,” Tegal envisions “enhance[d] throughput” by
`“performing two different types of etch in the same reactor” and performing
`“different types of etch, requiring different temperatures, in a single reactor.”
`Id. at 6:43–44, 1:43–48. Tegal also provides an example of “etching an
`oxide layer on a semiconductor wafer” at temperatures between 10°C and
`80°C, but envisions that “any two temperatures can be used.” Id. at 6:4–13,
`6:43–44.
`
`2. Matsumura
`Matsumura discloses a “method of heat-processing semiconductor
`devices whereby temperatures of the semiconductor devices can be
`controlled at devices-heating and -cooling times so as to accurately control
`their thermal history curve.” Ex. 1003, 2:60–65. Matsumura discloses
`applying the method to plasma etching when it states that “the present
`invention has been applied to the adhesion and baking processes for
`semiconductor wafers in the above-described embodiments . . . it can also be
`
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`applied to any of the ion implantation, CVD, etching and ashing processes.”
`Id. at 10:3–7.
`Figure 5A, below, is a schematic of an embodiment for heat-
`processing a substrate (wafer W) on a substrate holder (wafer-stage 12,
`which includes upper plate 13 and conductive thin film 14) in chamber 11.
`
`
`Figure 5A depicts adhesion unit 42 with control system 20, which measures
`the temperature of thin film 14 deposited on the underside of upper plate 13
`with thermal sensor 25. Id. at 5:13–17, 5:32–47, 5:67–6:4. CITE? Control
`system 20 sends signals (SM) to power supply circuit 19 to heat
`semiconductor wafer W on upper plate 13 by conductive thin film 14; and
`sends signals (SC) to cooling system 23 to control the amount of coolant
`supplied to jacket 22. Id. at 5:52–6:32, Figs. 5A and 5B.
`Inside the control system is a recipe, such as that shown in Figure 9
`below.
`
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`Figure 9 depicts a “recipe” with a “thermal history curve” showing
`temperature as a function of time. Id. at 4:42–43. At a given time (or
`pulse), the control system measures the substrate holder temperature with
`thermal sensor 25, compares thermal sensor 25’s measurement to that of the
`recipe shown in Figure 9, and either (1) sends a signal (SM) to power supply
`circuit 19 to heat the substrate (wafer W), (2) sends a signal (SC) to cooling
`system 23 to cool the substrate (jacket 22 under stage 12 exchanges heat
`with thin film 14), or (3) sends no signal and waits for the next measurement
`time. Id. at 5:52–6:32, Figs. 5A and 5B.
`To further explain the temperature control, Matsumura discloses
`Figure 7, shown below.
`
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`“FIG. 7 is a chart intended to explain the temperature change (include ripple
`of temperature) of a heating plate at a time when its temperature is being
`raised, lowered and kept certain.” Id. at 4:36–39.
`
`Narita
`3.
`Narita discloses a method for treating “a surface of a workpiece while
`accurately controlling the temperature of the workpiece.” Ex. 1004, 2:7–10.
`Narita further discloses that the method can be applied to plasma etching and
`thermal chemical vapor deposition (CVD), among other treatment methods.
`Id. at 3:3–5. The disclosed treating method “includes a temperature rise step
`in which first temperature control is performed and a treatment step in which
`second temperature control is performed.” Id. at Abstr. Figure 1, below, is a
`schematic of an embodiment for a CVD process where there is a substrate
`(semiconductor wafer 2) on a substrate holder (support member 5).
`
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`Figure 1 depicts control section 23 that controls the temperature using two
`temperature detecting mechanisms: thermocouple 6, which contacts
`substrate 2, and pyrometer 16, which does not contact the substrate. Id. at
`3:13–37, 3:65–4:13, 4:26–31. Narita discloses that two temperature sensors
`are used because the thermocouple has a thermal mass and
`rising
`reliability
`is decreased with
`respect
`to quickly
`temperatures because it takes a considerably long period of time
`to
`increase
`the
`temperature of
`the
`thermocouple
`itself.
`Therefore, when
`the substrate
`is quickly heated,
`the
`thermocouple cannot follow the temperature rise. As a result,
`the difference between a
`temperature detected by
`the
`thermocouple and an actual temperature becomes large, and a
`set value to be kept constant after quick rise is greatly overshot.
`. . .
`
`In contrast to this, if a pyrometer is used for temperature
`control of a substrate, the pyrometer can properly respond to
`quick heating because it has good response characteristics.
`Id. at 1:42–54.
`
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`Figure 2, below, depicts temperature as a function of time when a
`wafer is quickly heated.
`
`
`Figure 2 shows (1) overshooting the temperature set value (dashed line)
`when the control circuit only uses thermocouple 6 measurements to control
`the process; and (2) not overshooting the temperature set value (solid line)
`when the control circuit switches from thermocouple 6 to pyrometer 16
`measurements to control the process, during the time when the temperature
`is quickly increasing. Id. at 6:18–49.
`
`Thomas
`4.
`Thomas discloses a method for “dry etching refractory metal
`silicide/polysilicon structures in the manufacture, for instance, of
`semiconductor integrated circuits.” Ex. 1005, 1:7–10. “Of particular
`interest are refractory metal silicide materials such as tungsten disilicide . . . .
`In the preferred embodiment . . . the temperature is approximately 20
`degrees C.” Id. at 3:35–56. “The second stage process is, according to the
`preferred embodiment, optimized to rapidly and anisotropically etch the
`
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`polysilicon without significant undercutting and with a high selectivity to the
`underlying dielectric, typically silicon dioxide . . . the temperature is
`approximately 5 degrees C.” Id. at 3:57–4:13. Thomas discloses that the
`two stage process for etching multiple layer structures “provides rapid,
`anisotropic etching of the overlying silicide and also provides rapid,
`anisotropic etching of the underlying polysilicon with a high degree of
`selectivity to the underlying dielectric.” Id. at 4:57–66.
`
`B. Obviousness Grounds
`Tegal, Matsumura, Narita, Thomas, and Wang ’485
`1.
`Based on our review of Petitioner’s analysis and supporting evidence,
`we are persuaded that Petitioner has shown, on the current record, that there
`is a reasonable likelihood that it would prevail in its obviousness challenge
`to claims 56–58 over the combination of Tegal, Matsumura, Narita, Thomas,
`and Wang ’485.
`As argued by Petitioner (Pet. 12–29), Tegal discloses the desire for
`increased throughput in plasma etching by running multiple etches at
`different temperatures in the same chamber having a substrate and a
`substrate holder as required by each of the independent claims. Ex. 1002,
`1:43–45, 4:30–31. Thomas provides a stack of layers to be plasma etched in
`the same chamber at different temperatures that is substitutable in the Tegal
`process to benefit from the increased throughput. Ex. 1005, 3:57–68;
`Ex. 1010 ¶ 65. Thomas’s stack of layers includes two silicon-containing
`layers, specifically a silicide layer and a polysilicon layer, as required by
`claim 56. Ex. 1005, 3:33–47. Wang ‘485 increases processing temperatures
`to above 49°C during plasma etching of silicides and polysilicon structures,
`
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`as further required by claim 56, in order to increase etch rate or throughput.
`Ex. 1006, 5:7–15, 6:1–5, Fig. 21.
`Tegal further includes a control system for plasma etching
`temperatures, but without details. Ex. 1002, 4:28–31. Matsumura provides
`in detail a temperature control system for use in a plasma etching process,
`where the control system has the flexibility of being responsive to “inputted
`recipes and temperature detecting signal.” Ex. 1003, 5:60–63. Therefore,
`the control system of Matsumura effects temperature changes during the
`process as required by claim 56 and in accordance with a “predetermined
`recipe” that has a “time-temperature relationship.” Id. at 3:1–7, 6:36–37. In
`order to better control temperature during process temperature changes,
`Narita provides two temperature sensors used in a control system for plasma
`etching. Ex. 1004, 4:4–10, 5:30–31, Figs. 1, 4.
`Regarding claim 57, which depends from claim 56, Petitioner argues
`that it would have been obvious to change the substrate temperature within a
`time period less than about 5 percent of the total etching process time in
`view of Matsumura’s disclosure of a predetermined recipe and also to
`increase throughput. Pet. 23–24 (citing Ex. 1003, 3:1–7, 6:36–37, Figs. 8, 9;
`Ex. 1010 ¶¶ 77, 78, 80). Regarding claim 58, which depends from claim 56,
`Petitioner contends that Thomas teaches etching at least one layer in a
`chlorine-containing ambient as required by the claim. Id. at 24–25 (citing
`Ex. 1005, 2:5–8; Ex. 1010 ¶¶ 79, 80).
`Patent Owner responds that Petitioner’s citation to Wang ’485 (Ex.
`1006, 6:1–5) on page 22 of the Petition (claim chart for claim 56) does not
`support the proposition of maintaining one of the substrate temperatures
`above 49°C (claim element 56.e). Prelim. Resp. 6. Patent Owner also
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`contends that the Petition improperly segments the elements of claim 56 and
`fails to show that element 56.g (“operable to effectuate the changing within a
`preselected time period that is less than the overall process time associated
`with the etching the first silicon-containing layer and the second silicon-
`containing layer”) is disclosed in the prior art. Id. at 7–8. According to
`Patent Owner:
`Matsumura teaches control of the time for temperature ramp up;
`the time to hold the desired temperature; and the time to cool
`down the temperature. Matsumura does not teach the length of
`the preselected time between the first and second etch, i.e.,
`there is no teaching that the preselected time period, let alone a
`preselected time period that is “less than the overall process
`time associated with the etching the first silicon-containing
`layer and the second silicon-containing layer,” as required by
`claim 56, and Tegal has no time interval between temperatures.
`Accordingly, [Petitioner] fails to show this element of claim 56
`in the prior art.
`Id. at 8.
`
`We are not persuaded, at this early stage of the proceeding, that the
`arguments presented in the Petition are not supported by Wang ’485 and
`Matsumura. Petitioner contends that Figure 21 of Wang ’485 shows that the
`etch rate of molybdenum silicide increases from 750 to 1250
`angstroms/minute over a temperature range from 45°C to 80°C. Pet. 17
`(citing Ex. 1006, 6:1–5, Fig. 21). Therefore, the Petition does not rely upon
`the text of lines 1 to 5 in column 6 of Wang ’485 alone, and Patent Owner
`does not dispute that Figure 21 indicates increased etch rate over a
`temperature range of 45°C to 80°C. Regarding Matsumura, the
`predetermined recipes that depend upon a time and temperature relationship
`for the heat-processing of semiconductor devices consequently preselect the
`time and temperature conditions during which processing is conducted. See
`21
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`Pet. 20 (citing Ex. 1003, 1–7, 6:36–37, Ex. 1010 ¶ 73); Ex. 1010 ¶ 74.
`Therefore, the Petition sufficiently shows how independent claim 56 would
`have been obvious in view of the combination of Tegal, Matsumura, Narita,
`Thomas, and Wang ’485.
`In sum, Petitioner shows sufficiently that, on the current record, there
`is a reasonable likelihood it would prevail in showing that claims 56–58
`would have been obvious in view of the combination of Tegal, Matsumura,
`Narita, Thomas, and Wang ’485.
`
`Tegal, Matsumura, Narita, Thomas, and Fischl
`2.
`Based on our review of Petitioner’s analysis and supporting evidence,
`we are persuaded that Petitioner has shown, on the current record, that there
`is a reasonable likelihood that it would prevail in its obviousness challenge
`to claims 60, 62, 63, and 71 over the combination of Tegal, Matsumura,
`Narita, Thomas, and Fischl.
`As argued by Petitioner (Pet. 29–43), Tegal discloses the desire for
`increased throughput in plasma etching by running multiple etches at
`different temperatures in the same chamber. Ex. 1002, 1:43–45, 4:30–31.
`Thomas provides a stack of layers to be plasma etched in the same chamber
`at different temperatures that is substitutable in the Tegal process to benefit
`from Tegal’s increased throughput. Ex. 1005, 3:57–68; Ex. 1010 ¶ 65.
`Thomas further teaches a tungsten silicide layer that is etched at 20°C.
`Ex. 1005, 3:33–47. Fischl teaches that a silicon dioxide layer forms on
`tungsten silicide when it is exposed to air, which must be removed by
`etching at 25°C–150°C before etching the disclosed tungsten silicide layer.
`Ex. 1007, 3; Ex. 1010 ¶ 91. Therefore, plasma etching the tungsten silicide
`layer of Thomas in view of Fischl means the temperature for etching the
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`surface oxide is different from the temperature for etching the tungsten
`silicide, and the substrate is processed at a second different temperature as
`required by claim 60. Pet. 33–34. Because Fischl teaches etching at 25°C–
`150°C, Fischl discloses maintaining a substrate temperature above room
`temperature while processing the substrate as required by claim 60. See id.
`at 34–35.
`Tegal provides a control system for plasma etching temperatures, but
`lacks details. Ex. 1002, 4:28–31. Matsumura provides, in detail, a
`temperature control system suitable for plasma etching processes that
`includes a contact sensor and predetermined recipes which provide process
`flexibility. Ex. 1003, 5:60–63. Therefore, the control system of Matsumura
`effects temperature change to a second substrate temperature with a
`substrate temperature control circuit within a preselected time as required by
`claim 60 and in accordance with a “predetermined recipe” that has a “time-
`temperature relationship.” Id. at 3:1–7, 6:36–37. Narita improves
`temperature control during temperature changes in plasma etching processes
`by using two temperature sensors—a non-contact sensor in addition to a
`contact sensor. Ex. 1004, 4:4–10, 5:30–31, Figs. 1, 4.
`Patent Owner responds that the challenge to claim 60 “fails to identify
`any prior art that teaches changing the first substrate temperature to the
`second substrate temperature ‘within a preselected time to etch the silicide
`layer.’” Prelim. Resp. 9. As discussed above, at this stage in the
`proceeding, we are not persuaded by Patent Owner’s argument in view of
`Matsumura’s control system that includes recipes with a time and
`temperature relationship that can be applied to etching processes.
`
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`We are persuaded, on this record, that Petitioner’s discussion of the
`particular operations and structures in Tegal, Matsumura, Narita, Thomas,
`and Fischl together with the explanations in the Petition, are sufficient to
`establish a reasonable likelihood that claim 60 would have been obvious
`over the combination of the references.
`Regarding claims 62, 63, and 71, which each depend from claim 60,
`changing to the second substrate temperature is “by transferring heat using at
`least a pressure of gas behind the substrate” as recited in claim 62 or “by
`transferring energy using at least radiation” as recited in claim 63, and the
`substrate temperature is maintained “at a selected value within 50 to 100
`degrees centigrade” as recited in claim 71. We have considered Petitioner’s
`arguments and evidence and are persuaded, on the present record, that
`Petitioner has established a reasonable likelihood that it would prevail as to
`those claims as well.
`
`Tegal, Matsumura, Narita, and Thomas
`3.
`Based on our review of Petitioner’s analysis and supporting evidence,
`we are persuaded that Petitioner has shown, on the current record, that there
`is a reasonable likelihood that it would prevail on its obviousness challenge
`to claims 51, 55, and 68 over the combination of Tegal, Matsumura, Narita,
`and Thomas.
`As argued by Petitioner (Pet. 43–48), the same reasons for combining
`the disclosures of Tegal, Matsumura, Narita, and Thomas provided in the
`Petition with respect to claims 56–58 also apply to claim 51, 55, and 68.
`Petitioner additionally relies on Matsumura’s disclosure of a pulse wide
`modulation signal and cooling control signal sent from its control system to
`show that Matsumura’s control system alternates periods of heating and
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`cooling the substrate holder and the substrate on the substrate holder, to
`demonstrate that “heat is being transferred to the substrate holder with the
`substrate holder control circuit” during etching as required by claim 51. Id.
`at 45–46 (citing Ex. 1003, 4:32–35, 6:64–68, 8:18–22, Figs. 6A and 7; Ex.
`1010 ¶¶ 121–122). Regarding claims 55 and 68, which depend from claim
`51, Petitioner relies upon the same disclosures from Tegal and Matsumura
`(regarding changing the substrate temperature within less than about 5
`percent of the total etching process time) as applied to claim 57, and the
`same disclosures from Thomas (regarding etching two silicon-containing
`layers at two substrate temperatures) as applied to claim 56. Id. at 47–48.
`Patent Owner contends that the Petition is deficient because
`“Matsumura does not teach a time interval between a first etch temperature
`and a second etch temperature.” Prelim. Resp. 11. As discussed above, we
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