`
`FILE HISTORY
`08/567,224
`
`INVENTORS:
`
`DANIEL L. FLAMM , WALNUT CREEK, CA
`(US)SHIMAO YONEYAMA YAMANASHI,
`(JP)
`
`TITLE:
`
`PROCESS DEPENDING ON PLASMA
`DISCHARGES SUSTAINED BY
`INDUCTIVE COUPLING
`
`FILED:
`
`12-04-1995
`
`COMPILED:
`
`07 NOV 2014
`
`Page 1 of 138
`
`Samsung Exhibit 1007
`
`

`

`_-o
`
`C.)
`
`=3IA]
`I11~56724 ~PATENT DATE
`I o
`CLASS
`
`FILING DATE
`
`UTILITY
`
`NUMBER
`SE RIAL NUMBER
`
`Ch~
`
`IPATENT
`
`NUMBER
`
`SUBCLASS
`SBLS
`
`GROUP ART UNIT
`
`EXAMINER
`
`I
`
`V 1::.*1:
`
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`Forelon nrloritw claimed
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`
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`U..DEPT. of COMMVERCE * Paten n
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`f c-P CT-436L (rv -94)
`
`PARTS OF APPLICATION
`FILED SEPARATELY__________
`NOTICE OF ALLOWANCE MAILED.
`
`_______
`
`ApplicationsExaminer*
`CLAIM s.A C WED
`Print Claim
`Total Claims
`
`ISSUE FEE
`Amount Due
`Date Paid.
`
`Assistant Examiner
`
`DRAWING
`Sheets Drwg. Figs. Drwg.
`
`Print Fig.
`
`ISSUE.
`BATCH
`Primary Examiner NUMBER
`Label
`PREPARED FOR ISSUE
`AraVARNING: The informnation disclosed herein may be restricted. Unauthorized disclosure may be prohibited
`by the United States Code Title 35, Sections 122, 181 and 36 .8. Possession outside the U.S.
`Patent & Trademark Office is restricted to authorized employees and contractors, only.
`
`Form PTO-436A
`(Rev. 8/92)
`
`(FACE)
`
`Page 2 of 138
`
`

`

`08/567,224
`
`PROCESS DEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE
`COUPLING
`
`Transaction History
`
`Transaction Description
`Date
`1/2/1996
`Initial Exam Team nn
`2/14/ 1996 Notice Mailed--Application Incomplete--Filing Date Assigned
`6/22/1996 Application Is Now Complete
`7/3/1996 Application Captured on Microfilm
`7/18/1996 Case Docketed to Examiner in GAU
`11/8/1996 Power to Make Copies and/or Inspect
`11/26/1996 Petition Entered
`9/16/1997 Mail-Petition Decision - Granted
`12/9/1997 Case Docketed to Examiner in GAU
`12/10/1997 Mail Restriction Requirement
`12/10/1997 Restriction/Election Requirement
`7/17/1998 Aband. for Failure to Respond to 0. A.
`7/20/1998 Mail Abandonment for Failure to Respond to Office Action
`4/9/2001 Petition Entered
`8/13/2001 Mail-Petition Decision - Granted
`
`Page 3 of 138
`
`

`

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`Page 4 of 138
`
`

`

`__
`
`__
`
`StapWAtbi
`
`lse$i"'Here
`
`*
`
`1.
`
`POSITION
`CLASSIFIERID9D
`
`I
`
`Y
`
`E
`
`TYPIST
`VERIFIER__
`CORPS CORR.
`SPEC. HAND
`FILE MAINT.
`DRAFTING.-_
`
`___
`
`_
`
`_
`
`_
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`
`_
`
`_
`
`_
`
`_
`
`INDEX OF CLAIMS.
`
`ClAim
`
`Date.
`
`Claim
`
`Date
`
`-
`ir
`
`c
`c)
`
`c:0
`51
`52
`53
`54
`55
`56
`57
`58
`59
`60
`161
`62
`63
`64
`65
`66
`67
`68
`69
`.70
`171
`721
`73
`74
`75
`76
`1771
`78
`79
`80
`81
`1821
`83
`84
`85
`86
`1871
`88
`89
`90
`191
`92
`93
`94
`95
`906
`97
`98
`99
`1 1001
`
`SYMBOLS
`
`........................ .............. Rejected
`.............. Allowed
`........................
`-(Through numberal) Canceled
`. ................. Restricted
`N....................... Non-elected
`.............. Interference
`........................
`A....................... Appeal
`O ....................
`Objected -
`
`ILEFT INAinF-:
`
`2 3 5
`
`.7
`
`9
`
`_
`
`10'
`
`__15
`
`16
`
`__17
`
`__18
`
`_
`
`20
`21
`,_ 22,
`
`__23
`
`__24
`
`%25
`.1 .26.
`"21
`281,
`29
`30
`1-31 1
`
`__32
`
`__33
`
`__34
`
`35-
`
`__36
`
`__37
`
`__38
`
`__39
`
`40
`41
`42
`
`-43
`
`4 4
`
`*46
`
`* :47
`
`* 49.
`'50
`
`t
`
`Page 5 of 138
`
`

`

`SEARCH NOTES.
`
`Date
`
`Exmr..
`-1
`
`. i
`
`INTERFERENCE SEARCHED
`Exmr.
`Sub.
`Date
`Class
`
`(RIGHT OUTSIDE)
`
`Page 6 of 138
`
`

`

`BAR CODE LABEL
`
`
`
`1111 IU~IIIIiI I~HU.S. PATENT AIPPLICATION
`
`SERIAL NUMBER
`
`FILING DATE
`
`CLASS
`
`GROUP ART UNIT
`
`08/567,224
`
`12/04/95
`
`427
`
`1112
`
`SDANIEL L. FLAMM, WALNUT CREEK, CA; GEORGY VINOGRADOV, YAMANASHI, JAPAN;
`SSHIMAO0 YONEYAMAr YAMANASHI,
`JAPAN.
`
`**CONTINUING DATA*********************
`VERIFIED
`
`**FORjEIGN/PCT APPLICATIONS************
`VERIFIED
`
`FOREIGN FILING LICENSE GRANTED 06/22/96
`
`STATE OR
`COUNTRY
`
`SHEETS
`DRAWING
`
`TOTAL
`CLAIMS
`
`INDEPENDENT
`CLAIMS
`
`FILING FEE
`RECEIVED
`
`ATTORNEY DOCKET NO.
`
`CA.
`
`13
`
`20
`
`3
`
`$880.00
`
`16655-000300
`
`RICHARD T OGAWA
`w TOWNSEND & TOWNSEND & CREW
`Uj
`TWO EMBARCADERO CENTER 8TH FLOOR
`SAN FRANCISCO CA 94111
`
`PROCESS DEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE
`S COUPLING
`
`This is to certify hat annexed hereto is a true. copy from the records of the United States
`Patent and Tradetmark Office of the application which is identified above.
`By authority of the
`COMMISSIONER OF PATENTS AND TRADEMARKS
`
`Date.
`
`Certifying Officer
`
`Page 7 of 138
`
`

`

`PATENT APPLICATION SERIAL NO._______
`
`00/567224
`
`U.S. DEPARTMENT OF COMMERCE
`PATENT AND TRADEMARK,OFFICE
`FEE RECORD SHEET
`
`PTO'1556
`
`Page 8 of 138
`
`

`

`PTEND*
`
`lanD~
`
`PAETAPPLICATIO
`COMMISSIONER OF PATENT AND TRADEMARKS
`Washington, D.. C..20231
`
`Sir:
`Transmitted here with for filig is the
`[X] patent application of
`[design patent application of
`[continuation-in-part pttlication of
`
`.08/567224
`
`Atty. Docket No. 16655-000300
`
`T~xprOss Mail" Label No. EM232444814US'
`
`Date o~f Deposit December 4. 1995
`
`I hereby certify that this, is being deposited with the
`United States Postal Service "Express Mail Post Office
`oto Addressee" service under 37 CFR 1.10 on the date
`indicatoa
`and is ddressed to
`nunmissione
`ofPK
`r m
`.. 20231
`-a
`e
`
`n
`
`By
`
`Inventor(s): Daniel L. Flamm, Georgy Vinogradov,.Shimnao Y
`oneyama-
`
`For: PROCESSIDEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE, COUPLING
`
`[]This application claims priority from each of the following' Application Nos./filing dates:
`
`Enclosed- are:
`[X] Patent Application ( including 36 pages specification, 3 pages claims, 1 page abstract).
`[X] 13 sheet(s) of ] formal [X] informal drawing(s).'
`[]An assignment of the invention to ________________________________
`[]A [ ] signed [i unsigned Declaration & Power of Attorney..
`[]A [ ] signed [i unsigned. Declaration.
`[]A Power of Attorney.
`[1A verified' statement to establish small entity status under 37 CFR. 1.9 and 37 CFR 1.27 [ is enclosed [was filed
`in the earliest of the above-identified patent application(s).
`[A certified copy of az ______________________
`I]Inform-ation Disclosure 'Statement under 37 CFR 1.97.
`XlPostcard.
`
`application.
`
`In view of the Unsigned Declaration as filed with -this 'application and pursuant to 37 CFR § 1.53(d),
`Applicant requests ..deferral of the filing fee until submission of the. Missing Parts of Application.
`
`DO NOT CHARGE THE FILING FEE AT THIS TIME.
`
`Telephone:
`(415)' 326-2400
`rto\work\i66S5\3-app.trn
`
`tchard T.. Ogawa
`Reg. No.: 37,692
`Attorneys for Applicants
`
`Page 9 of 138
`
`

`

`0/567224
`
`TOWNSEND) ad TOWNSEND and CREW
`Stev'artStre4 o, er
`(j
`Onie Market Plaza
`San Francisc6o"4 " CA\94fjQ5
`(415) 326-2400 K'!
`
`Atty. Docket No. 16655-000300
`
`"Express Mail" Label No. EM2324448 14US
`
`Date dif Deposit December 4, 1995
`
`PATENT APPLICATION
`COMMISSIONER OF PATENT AND TRADEMARKS
`Washington, D. C. 20231
`
`Sir:
`Transmitted herewith for filing is'the
`[]patent application of,
`[design patent application of
`[continuation-in-part patent applicationof
`
`I.hereby certify that this is being deposited with the
`United States Postal Service "Express Mail Post Office
`to Addressee" service under 37 CFR 1.10 on the date
`iica
`and is ddressedtojh
`rmissioner
`of-P
`C. 20231
`iaknn
`
`tsadr
`
`By
`
`i4-Q
`
`<J
`
`Inventor(s):, Daniel L. Flamm, Georgy Vinogradov, Shimao Yoneyama
`
`For: PROCESS DEPENDING'ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE COUPLING
`
`[IThis application claims priority'from each of the following Application NosA/filing dates:
`
`37 CFR 1.27 H is enclosed [was filed
`
`Enclosed are:
`[X Patent Application (including 36 pages specification, 3 pages claims, 1 pz
`age abstract).-
`[X 13 sheet(s) of [ formal
`[X] informal drawing(s).
`[]An assignment of the invention to
`[1A [I signed [ unsigned Declaration & Power of Attorney.
`[IA [ signed [lunsigned Declaration.
`[IA Power of Attorney.
`[]A verified statement to establish small entity status under 37 CFR 1.9 and
`in the earliest of the above-identified patent application(s).
`[ A Acertified copy of a________
`[IInformation Disclosure Statement under 37 CFR 1.97.
`[X] Postcard.
`
`_________
`
`application.
`
`In view of the Unsigned Declaration as filed with this:application and pursuant to 37 CFR §1.53(d)g
`Applicant requests deferral of the filing fee until submission of the Missing Parts of Application.
`
`DO NOT CHARGE THE FILING FEE AT THIS TIME.
`
`Telephone:
`(415) 326-2400
`rto\work\ 16655\3app.tm
`
`Ichard T. Ogawa
`Reg. No.: 37,692
`Attorneys for Applicants
`
`Page 10 of 138
`
`

`

`D/567224
`
`I "NSE D.nd"'OWNSEND and CREW
`Sjkidft To4i."
`~ne 4MarkefPaza
`
`Atty. Docket No. 16655-000300
`
`"Express Mail" Label No. EM232444814US
`
`Date of Deposit December 4. 1995
`
`PATEN4f'PLICATION
`COMMISSIONER OF PATENT AND TRADEMARKS
`Washington, D. C. 20231
`
`S ir:
`Transmitted' herewith for filing is the
`[M patent application of
`[design patent application of
`[continuation-in-part patent application of
`
`I hereby certify that this is being deposited with the
`United States Postal Service "Express Mail Post Office
`to Addressee" service under 37'CFR 1.10 on the date
`indicaan
`is ddressed tojk mmissioner
`n.I.20231
`nt;adrr,mkW
`ByC
`
`Inventor(s): Daniel L. Flamm, Georgy Vinogradov, Shimao Yoneyama
`
`For: PROCESS DEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE COUPLING
`
`[IThis application claims priority from each of the following Application Nos./filing dates:
`
`Enclosed are:
`[IPatent Application (including 36 pages specification, 3 pages claims, 1 page abstract).
`[X] 13 sheet(s) of [ formal
`[X] informal drawing(s).
`[IAn assignment.of the invention to______________
`[1A[ signed [unsigned Declaration & Power of Attorney.
`[IA[ signed []unsigned Declaration.
`[IA Power of Attorney.
`[IA verified statement to establish small entity status under 37 CFR 1.9 and 37 CFR 1.27 ]is enclosed [was filed
`in the earliest of the above-identified patent application(s).
`[IA certified copy of a_________
`___________
`[]Information* Disclosure Statement under 37 CFR 1.97.
`[IPostcard.
`
`application.
`
`_________________
`
`In view of the Unsigned Declaration as filed with this application and pursuant to 37-CFR §1.53(d),
`Applicant requests deferral of the iling fee until submission of the Missing Parts of Application.
`
`DO NOT CHARGE THE FILING FEE AT THIS TIME.
`
`Telephone:
`(415) 326-2400
`rtowork\166S5\3-app.tmn
`
`4a2--I
`
`Rchard T. Ogawa (
`Reg. No.: 37,692
`Attorneys for Applicants
`
`Page 11 of 138
`
`

`

`DEG A
`
`16655-003000
`
`PATENT APPLICATION
`
`PROCESS DEPENDIN,
`SUSTAINED BY
`
`G ON- PLASMA DISCHARGES
`INDUCTIVE COUPLING
`
`Inventors:
`
`Daniel L. Flamm, a citizen of the!United States, residing at 476
`GrOlen View Drive, Walnut Creek, California 94596;
`
`Georgy Vinogradov, a citizen of Russia, residing at Dragons
`Mansion Apt. 306, 5860-5 Ryuchi, Futaba-cho, Kitakomagun,
`Yamanashi, 400-01 Japan; and
`
`Shimao Yoneyama, a citizen of Japan, residing at 5875-4 Ryuchi,
`Futaba-cho, Kitakomag'un,'Yamanashi, 400-01,Japan.-
`
`Assignee:
`
`MC Electronics Co., Ltd.
`
`Entity Status:
`
`Large
`
`TOWNSEND and TOWNSEND and CREW.
`Steuart Street Tower
`One Market
`San Francisco, CA 94105
`(415) 326-2400
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`PROCESS DEPENDING'ON PLASMA DISCHARGES SUSTAINED
`BY INDUCTIVE COUPLING
`
`BACKGROUND OF THE INVENTION
`This invention relates -generally to plasma processing. More
`particularly, the invention is for plasma processing of devices using an inductive'
`discharge. This invention is illustrated in an example with regard to plasma
`etching and resist stripping of semiconductor devices. The invention also is
`illustrated with regard to chemical vapor deposition (CVD) of semiconductor.
`devices.' But it will be recognized that the. invention has a wider range of
`applicability. Merely by way of example, the invention.also can be applied in
`other plasma etching applications, and deposition of materials such as silicon,
`silicon dioxide, silicon nitride, polysilicon, 'among others.-
`Plasma processing techniques can occur in a variety of
`semiconductor manufacturing processes. Examples of.plasma 'processing
`techniques occur in chemical dry etching (CDE), ion-assisted etching (IAE), and
`plasma enhanced chemical'vapor deposition (PECVD), including remote plasma
`deposition l(RPCVD) and ion-assisted plasmra enhanced. chemical vapor deposition
`(IAPECVD). These plasma processing techniques often rely upon. radio frequency
`power (rf) supplied to an inductive coil fo rprovidinig'power to gas phase species in
`forming a plasma.
`Plasmas can-be used to form -neutral species (i.e., uncharged) for
`purposes of removing or forming films in the manufacture of integrated circuit
`devices. For instance, chemical dry:etching generally depends,on gas-surface
`reactions involving these neutral species without 'substantial ion bombardment.
`In other manufacturing processes, ion bombardment to substrate
`surfaces is often. undesirable. This ion bombardment, however, is known to have
`harmful effects on properties of material layers in devices and excessive ion
`bombardment flux and energy can lead to intermixing of materials in. adjacent
`device layers, breaking down oxide and "wear out, " injecting of contaminative
`material formed in the processing environment into substrate material layers',
`harmful changes in substrate morphology (e.g. amophotization), etc.
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`Ion assisted etching processes, :however, rely upon ion bombardment
`to the substrate surface in defining selected.films. But these ion assisted etching
`processes commonly have a lower. selectivity relative to conventional CDE
`processes. Hence, CDE is often chosen* when high selectivity is desired and ion
`bombardment to substrates are to be avoided.
`One commonly used chemical dry etching technique is conventional
`photoresist stripping, often termed ashing or stripping. Conventional resist
`stripping relies upon a reaction between a neutral. gas phase species and a surface
`material layer, typically for removal.
`'This reaction generally forms volatile
`products with the surface material layer for.its removal. The neutral gas phase
`species is, formed by a plasma discharge. This plasma discharge can be sustained
`by a coil (e.g., helical coil, 'etc.) operating at a selected frequency in a
`conventional photoresist stripper. An example of th e conventional pho-toresist
`stripper is a quarter-wave helical resonator 'tripper, which is described by -U.S.
`Patent No. 4,368,092 in the name of, Steinberg et al.
`Referring to the above, an objective in chemical dry etching -is to
`reduce or even eliminate ion bombardment (or ion flux) to surfaces being
`processed to maintain the desired etching, selectivity.
`In practice, however, it is
`often. difficult to achieve using conventional techniques. 'These conventional
`techniques geneidlly attempt to control ion flux by suppressing the amount of
`charged species in the plasma source reaching the process chamber. A variety of
`techniques for suppressing these charged species have been proposed.
`These techniques often rely upon shields, baffles,-large separation
`distances between the plasma source and the'chamber, or the like, placed between
`the plasma source and the process' chamber.' The conventional techniques
`generally attempt to directly suppress charge density downstream of the plasma
`source by interfering with convective and diffusive transport of charged species.
`They tend to promote recombination of charged species by either increasing the
`surface area (e.g.., baffles, etc.) relative to volme, or increasing flow time,whc
`relates to increasi ing the distance betweenthe plasma sou rce and the process
`chamber.
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`These baffles, however, cause loss of desirable neutral etchant
`species as well. The baffles, shields, and alike, also are often cumbersome.,
`Baffles,'Ishields, or the large separation distances. also cause, undesirable
`recombinative loss of active species and sometimes cause radio frequency power
`loss andother problems. These baffles and' shields also-'are a potential source of
`particulate contamination, which is often damaging to integrated circuits.
`Baffles, shields, spatial separation,. and alike, when used alone also
`are often insufficient to substantially prevent: unwanted parasitic plasma currents.-
`These plasma currents are generated between the wafer and the plasma source, or
`betweenf the plasma'source'and walls of the. chamber.. It is commonly known that
`when initial charged species levels are present in an electrical field, the charged
`species are accelerated and-dissociative colli1sions with neutral particles can
`multiply* the concentration of charge to higher levels. -If sufficient "seed" levels of
`charge and rf potentials are present, the parasitic' plasma in the vicinity of the
`In some cases, these
`process,'wafer can reach harmful charge density levels.
`charge densities m ay be similar to or evenigreater than plasma density within the
`source plasma region, thereby causing even more ion flux to the substrate.
`Charge densities also createRa voltage difference between the plasma
`source and processing chamber or substrate support, which can have'an additional
`deleterious effect This voltage difference enhances electric fields that can
`accelerate extraction of charge from the plasma source. Hence, their presence
`often induces increased levels of charge to be irregularly transported from the
`plasma source to process substrates, thereby causing non-uniform ion assisted
`etching.'
`
`Conventional ion assisted plasma etching, however, often requires
`control and maintenance of ion flux intensity and uniformity within selected
`process'limits and within selected process energy ranges.. Control and maintenance
`of ion flux intensity and -uniformity are often'difficult to achieve using conventional
`techniques. For instance, capacitive coupling between high voltage selections
`of the coil and the plasma discharge often cause high and'uncontrollable plasma
`It is generally understood that voltage difference
`potentials relative to ground.
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`between- the plasma and ground can cause damaging high energy. ion bombardment
`of articles being processed;by the plasma, A.s:illustrated by U.S. Patent No.
`5,234,529 in the name of'Johnson.
`It is further often understood that rf
`component of the plasma potential varies in. time since it is derived from a
`5coupling
`to time varying rf excitation. Henc6e, the energy of charged particles
`from plasma,in conventional 'inductive sources is spread over a.relatively wide
`range of energies, which undesirably tends to introduce uncontrolled variations in
`the processing of articles by the plasma.
`The voltage difference between the region just outside of a plasma
`source and the processing chamber can be modified by introducing internal
`conductive shields or electrode elements into the:processing apparatus downstream
`of the source. When the, plasma potential is elevated with respect .to these shield
`electrodes, however, therelis a tendency -to generate an undesirable capacitive
`discharge between. the shield and plasma source. *These electrode elements are
`often a-source of, contamination and the likel;i hood for contamination is even
`greater when there is capacitive discharge (ion -bombardment from capacitive
`discharge is a potential sou rce of sputtered- material). Contamination is damaging
`to the manufacture of integrated circuit devices.
`Another limitation is that the'shield or electrode elements generally,
`require small holes therein, as'structural elements. These,small holes are designed
`to allow gas to flow therethrough. The small holes, however, tend to introduce"
`unwanted pressure, drops and neutral species recombination. If the holes are made
`larger, the plasma from the source tends to survive transport through the holes and
`unwanted downstream charge flux will often 'result. In addition, undesirable
`discharges to these holes in shields can, at times, produce an even more
`undesirable hollow cathode: effect.
`In conventional helical. resonator designs, conductive external
`shields are interpo6sed between the inductive power (e.g., coil, etc.) and walls of
`the vacuum vessel containing the plasma. A Variety limitations with. these external
`capacitive shielded plasma designs (e.g., helical resonator, inductive discharge,
`In particular, the capacitively shielded design *often
`etc.) have been observed.
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`produces. plasmas that are difficult to tune.and even ignite. Alternatively, the use
`of unshielded plasma sources (e.g., conventional quarter-wave resonator,
`conventional. half-wave resonator, etc.) attain a substantial plasma potential from.
`c apacitive coupling to the'coil, and hence are; prone to'create uncontrolled. parasitic
`currents to grounded surfaces. Accordingly, the use of either the shielded
`or the unshielded:'sources using conventional quarter and half-wave rf frequencies
`produce undesirable results.
`In many conventional plasma sources a means of cooling is required
`to maintain the plasma source and substrates being treated below a maximum
`temperature limit. Power dissipation in the structure causes heating and thereby
`increases the difficulty and expense of implementing effective cooling means.
`Inductive currents may also be coupled ftrm'the excitation coil into internal or
`capacitive shields, and -these currents are an additional source of undesirable power
`lossandheaing Covenionl cpactie' helding in helical resonator discharges
`
`utilized-A shield which was substantially split along the long axis of the resonator
`to lessen eddy current loss. However, such a s hield substantially perturbs the
`resonator characteristics owing to unwanted capacitive coupling and 'current which
`flows from the coil to the shield. Since there are no general design equations, nor
`are properties'curirently known for resonators which are "loaded" with a shield
`along the axis, sources using this design must be sized and made to work by trial
`and error.
`
`In inductive'discharges, it is highly desirable to be able to
`substantially control the plasma potential relative to ground !potential, independent
`In many cases, it
`of input power, pressure, gas compo sition and other variables.
`is desired to have the-plasma potential be substantially-at ground potential (at least
`~ oeta ya mutisgificantly different from the'
`offset from grou
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`For example, when-a plasma
`floating potential 'or intrinsic DC plasma'pot ential).
`*Source is utilized 'to generate neutral species to be transported downstream of the
`source for use in ashing resist'on a semiconductor device substrate (a wafer or flat
`panel electronic display), the concentration and potential of charged plasma species
`in the reaction zone are desirably reduced to avoid charging damage from electron
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`or ionic current from.the plasma to the device. Wheni there is a substantial
`potential.difference between plasma in the source and grounded surfaces beyond
`the source, there is a tendency for unwanted parasitic plasma discharges to form
`outside of the source region.*
`Another undesirable effect of potential difference is the acceleration
`of ions toward grounded surfaces an.d subsequent impact of the energetic ions with
`surfaces. High energy ion bombardment may ase lattice damage to the devic
`substrate being processed and may cause.the chamber wall or other chamber'
`materials to sputter and conta minate device*wafers.
`In other plasma processing
`procedures, however, some ion bombardment may be necessary or desirable, as is
`the case particularly for anisotropic ion-indiiced plasma etching procedures (for a
`discussion of ion-enhanced plasma etching. mechanisms See Flamm (Ch. 2,pp.94.-
`183 in Plasma Etching, An Introduction, D! M. Manos and D.L. Flamm, eds.,
`Academic Press,, 1989)). Consequently, uncontrolled- potential differences, such as'
`that caused by "stray" 'capacitive coupling.fro'm the coil of 'an inductive plasma
`source to the plasma, are undesirable.
`Referring to the above limitations, conventional plasma sopurces also
`have disadvantages when. used in conventional plasma enhanced CVD techniques.
`These techniques commonly. form a reaction of a gas composition in a plasma
`discharge. One conventional plasma, enhanced technique relies upon ions.aiding in
`rearranging and stabilizing. the film, provided the bombar dment from the plasma is
`not sufficiently eiergetic to damage the underlyinfg' substrate'or the growing film.
`Conventional resonators and,other types of inductive discharges often produce
`parasitic plasma currents from capacitive coupling, which often detrimentally
`influences film quality, e.g., an inferior- film, etc. These -parasitic plasma currents
`are often uncontrollable, and highly undesirable. These plasma sourcesI also have
`disadvantages in other plasma processing techniques such as ion-assisted etching,
`and others. Of course, the particular disadvantage will often depend-upon the
`application.
`
`To clarify certain concepts used'in this application, it will be
`convenient to introduce these definitions.
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`Ground (or ground potential): These term's are defined as a
`reference potential which is generally -taken. as the potential of a
`highly conductive shield or other highly conductive surface which
`surrounds the plasma source,.: To be a true ground shield in the
`sense of this definition, the RF conductance at the operating
`frequency is often substantially high so that potential differences
`generated by current'within the shield are of negligible magnitude
`compared to, potentials- intentionally applied to the various structures
`and elements of. the plasma source, or substrate support assembly.
`However, some realizations of,plasma sources do not incorporate a
`shield or surface with adequate ectrclssetnet etti
`In implementations where there is a surrounding
`definition.
`conductive surface that is somewhat similar to a ground shield or
`ground.plane, the'ground potential is taken to be the fictitious
`potential which the imperfect. grounded surface would have
`In designs-
`equilibrated to if it had zero- high frequency impedance.
`where there -is no physical surface which is adequately configured or.
`which does not have, insufficient susceptance to act as a "ground"
`according to. the above,definiiion, ground potential is the potential of
`a fictitious surface which is equi-potential with the shield. or
`"ground." conductor of an unbalanced transmission line connectio n to
`the plasma source at its RF f6ed point.. In designs where the plasma
`source is connected to An RF1 generator with a balanced transmission
`line RF feed, "ground" potential is the average of the driven feed'
`line potentials at.the point where the feed lines are coupled to the
`plasma source.
`
`Inductively Coupled Power: This term is defined as power
`transferred to the plasma substantially by means of a time-varying
`magnetic flux which is induced within the volume containing the
`plasma source. A time-varying magnetic flux induces an
`electromotive force in'accord; with Maxwell's equations. This
`electromotive force ind uces motion by electrons and other charged
`particles. in the plasma and thereby imparts energy to these particles.
`
`In most
`RF inductive, power source and bias. power supply:
`conventional inductive: plasma source reactors, power is supplied to
`an inductive coupling element. (thel inductive coupling. element is
`often a multi-turn coil which tabuts a dielectric wall containing a gas
`where the plasma is igniited at low! pressure) by an rf power
`generator.
`
`Conventional Helical Resonator: Conventional helical resonator can
`be "defined as plasma: applicators. These plasma applicators have
`been designed and operated in multiple configurations, which were
`described in, for example, U.S. Patent No. .4,918,031 in the names
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`of Flamm* et'4., U.S. Patent., No. 4,68, 092 in the'name of
`Steinberg tal., U.S.Patent No. 5,304,282'in the name of Flamm-
`U.S. Patent.No. 5,234,529 in the'name of Johnson, U.S. Patent No.
`5,431,968 in, the name of Miller, and,others. In these
`configurations, one end of. the. helical resonator applicator coil has
`been grounded to its outer shield.: In one conventional
`configuration, a quarter wavelength helical resonator section is
`employed with one end of the, applicator coil grounded and the other
`end floating.(i.e., open circuited). A trimming capacitance is
`sometimes connected between the grounded outer shield and the coil
`to "fine tune" the quarter wave structure to a desired resonant
`frequency that is.below the native resonant frequency., without added
`capacitance.. In another,conv .entional configuration, a half-
`wavelength helical resonator section was employed in which both
`ends of the coil were grounded. The function of grounding the one
`or both ends of the coil was believed to be not essential, but
`* advantageous to "stabilize the plasma operating characteristics" and'
`"reduce the possibility- of coupling stray current to nearby objects."
`See U.S. Patent No. 4,918,0131.
`
`Coniventional resonators have also been constructed in other
`* geometrical 'configurations. For instance, the,design 6f helical
`resonators With a shield of square cross section is described in
`Zverev et al'. IRE Transaction's on Component Parts, pp. 99-110,
`Sept. 1961. Johnson (U.S. Patent No. 5,234,529) teaches that one
`end'of the cylindrical spiral coil in a conventional helical resonator
`may be deformed into a planar spiral above the top surface of the
`plasma reactor tube. U.S.'Patent No. 5,241,245 in the names of'
`Barnes et al. teach the u se o f conventional helical resonators In
`which the spiral cylindrical, coil is:entirely deformed into a planar
`spiral arrangement with no helica.l:coil component along the
`sidewalls of the plasma source,(this geometry has often -been
`referred to as a "transformer .:coupled plasma," termed a TCP).
`From the above it is seen that an improved technique, including a
`method and apparatus, for plasma processing is often desired.
`
`SUMMARY OF THE INVENTION
`The present invention provides'a technique, including a method and
`apparatus, for fabricating a product using a,plasma discharge. The present
`technique relies upon the control. of.the instantaneous plasma AC potential to
`'These characteristics
`selectively control A variety oftplasma characteristics.
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`include the amount of neutral sp ecies, the am ount of charged species, overall
`plasma potential, the spatial extent and dis tr ibution of plasma density, the
`distribution of electrical current, and others.. This technique can be used in
`applications including chemical dry etching '(e.g., stripping, etc.), ion-enhan