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`FILE HISTORY
`08/567,224
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`INVENTORS:
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`DANIEL L. FLAMM , WALNUT CREEK, CA
`(US)SHIMAO YONEYAMA YAMANASHI,
`(JP)
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`TITLE:
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`PROCESS DEPENDING ON PLASMA
`DISCHARGES SUSTAINED BY
`INDUCTIVE COUPLING
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`FILED:
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`12-04-1995
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`COMPILED:
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`07 NOV 2014
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`Page 1 of 138
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`Samsung Exhibit 1007
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`FILED SEPARATELLY
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`NOTICE OF; ALLOWANCE MAILED ’_
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`WARNING: The information disclosed herein may be restricted. Unauthorized disclosure may be prohibited
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`by the United States Code TItle 35. Sections 122. 181 and 368. Pessession outside the US.
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`Patent & Trademark Office is restricted to authorized employees and contractorsonly.
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`PROCESS DEPENDING ON PLASMA DISCHARGES SUSTAINED BY lNDUCl'IVE
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`7/3/1996 Application Captured on Microfilm
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`11/8/1996 Power to Make Copies and/or Inspect
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`9/16/1997 Mail-Petition Decision - Granted
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`12/9/1997 Case Docketed to Examiner in GAU
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`7/20/1998 Mall Abandonment for Failure to Respond to Office Actlon
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`GROUP ART UNIT
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`1112
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`DANIEL L. FLAMM, WALNUT CREEK, CA; GEORGY ViNOGRADOV, YAMANASHI,
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`'SHIMAO YONEYAMA, YAMANASHI,
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`FOREIGN FILING LICENSE GRANTED 06/22/96
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`$880.00
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`_16555-000300
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`RICHARD T OGAWA
`TOWNSEND & TOWNSEND & CREW
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`TWO EMSARCADERO CENTER 8TH FLOOR
`SAN FRANCISCO CA
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`PROCESS DEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE
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`that annexed hereto is _a true. copy fr0m_ the records of the United States _
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`PATENT APPLICATION SERIAL NO.
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`{Ia/567224
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`U.S. DEPARTMENT OF COMMERCE
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`PATENT AND TRADEMARK OFFICE
`FEE RECORD SHEET
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`PT041556
`(5/87)
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`Page 8.0f138', I (it
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`For: PROCESS 'DEPENDING ON PLASMA DISCHARGES susrAmED- BY INDUCTIVE COUPLING
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`Date df Deposit December 4 1995
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`PATENT APPLICATION
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`Washington, D. C. 20231
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`chard T. Ogawa
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`Reg. No.: 37,692
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`
`Attorneys for Applicants
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`Page 10 of138
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`For: PROCESS DEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE COUPLING
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`Reg. No.: 37.692
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`Attorneys for Applicants ‘
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`Pagell,0f138
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`Page 11 of 138
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`16655-003000
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`PATENT APP-IEJICATION’
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`PROCESS DEPENDING ON'PLASMA DISCHARGES ‘
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`SUSTAINED BY INDUcTIgVE COUPLING
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`Inventors:
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`- Daniel L. Flamm, a citizen of thegUnited‘ States, residing at'476
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`Green View Drive, Walnut Creekf California 94596;
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`Georgy Vinogradov, a citizen of Russia, residing at Dragons
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`Mansion Apt. 306, 5860-5 Ryuchi, Futaba-cho, Kitakomagun,
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`Yamanashi, 400—01 Japan; and
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`Shimao Yoneyama, a citizen of Japan, residing at 5875-4 Ryuchi,
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`Futaba-cho,-lKitakornagun, Yamanashi, 400-01'Japan.
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`Assignee:
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`MC Electronics Co., Ltd.
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`Entity Status:
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`Large
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`._ TOWNSEND and TOWNSEND and CREW
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`Steuart Street Tower
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`One Market
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`San Francisco, CA 94105
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`(415) 326-2400
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`Page 12 of138 »
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`BACKGROUND OFTHE INVENTION
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`This invention relatesgenerally to plasma proCessing; More
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`particularly, the invention is for plasma processing of devices using an inductive '
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`discharge. This invention is illustrated in an examplewith regard to plasma ‘.
`etching and. resist stripping ‘of semiconductordevices. The invention also is I‘
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`illustrated with regard to chemical vapor deposition (CVD) of semiconductor.
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`applicability. Merely by way of example, the invention also can be applied in
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`other plasma etching applications, and deposition of materials such as silicon,
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`I silicon dioxide, silicon nitride, polysilicon, among Others:
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`Plasma processing techniques can occur in a variety of
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`techniques occur in chemiCal dry etching (CDE), ion-assisted etching (IAE), and
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`plasma enhanced chemical ivapor deposition (PECVD),inc‘luding remote plasma
`deposition }(RPCVD) and ion-assisted plasma enhanced chemical vapor deposition '
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`' (IAPECVD). These plasma processing techniquesoften rely upon. radio frequency
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`power (if) supplied to an inductive coil for providing power to gas phase species in
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`forming a plasma.
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`devices; For instance, chemical dry etching generally dependson gas—surface
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`reactiOns involving these neutral species without {substantial ion bombardment.
`In other'ma‘nufacturing processes, iion bombardment to substrate
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`surfaces is oftenundesirable. This ion bombardment, however, is known to have
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`bombardment, flux and energy can lead to intermixing of materials in, adjacent
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`device layers, breaking down oxide and "wear out," injecting of contaminative~
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`Ion assisted etching processes, :however, rely upon ion bombardment
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`to the substrate surface in defining selectedfilms. But these ion assisted etching
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`processes commonly have a lower selectivity relative to‘conventional CDE
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`One commonly used chemical dry etching technique is conventional
`photoresist stripping, often. termed ashing or _stripping. Conventional resist
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`stripping relies upon a reaction between a neutral gas phase species and a surfaCe
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`material layer, typically for removal.
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`stripper is a quarter—wave helical resonator fist-ripper, which
`described by US.
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`I Referring to the above, an objective in chemical dry etching "is to
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`processed to maintain the desired etching selectivity.
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`techniques generally attempt to control ion flux by suppressing the amount of
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`These techniques often rely upon shields, baffles, large separation
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`distances between the plasma source and Itheiichamber, or the like, placed between
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`a source by interfering with Convective and diffusive transport of charged species.
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`surface area (e.g.', bafflesfletc.) relative to‘ volume, or increasing flow time, which ‘
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`relates to increasin the diStance between the plasma source and the process
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`These baffles, however, cause loss of desirable neutral etchant
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`species as well. The baffles, shields, and alike, also are often cumbersome, ‘
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`Baffles, ,shields, or the large separation distancesiaISO cause undesirable
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`recombinative loss of active species and sometimes cause radio frequency power
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`loss and other prdblems. These baffles'and? shields also'are a potential source of
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`particulate contaminatiOn, which is often damaging to integrated circuits.
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`Baffles, shields, spatial separation,- and alike, when used alone also
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`are often insufficient to substantially prevent: unwanted parasitic plasma currents;
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`These plasma currents are generated between: the wafer and the plasma source, or
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`between; the plasma'sourceiand walls of thegc'hamber. _It is commonly knoWn that
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`p when initial charged species, levels are present in an electrical field, the charged
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`species are accelerated andvvdissociative cbllisions with'neutr'al particles can
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`multiply the concentration of charge to higlier levels.
`‘If sufficient "seed" levels of
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`charge and _rf poténtia-ls are present; the parasitic plasma in the vicinity of the
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`process 1wafer can reach harmful charge density levels.
`In' some cases, these
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`charge densities may, be similar to or even.greater than plasma density within the
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`source plasma regiOn, thereby causing even more ion flux to the substrate.
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`Charge densities also create a voltageldifference between the plasma
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`source and processing chamber or substrate Support, which can have an additional
`deleterious effect; This voltage differencelenhances electric fields that can
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`accelerate extraction of charge from the plasma source. Hence, their presence
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`often induces increased levels of charge to be irregularly transported from the
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`plasma source to process substrates, thereby causing non-uniform ion assisted
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`etchings
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`Cohventional ion assisted plasma etching, however, often requires
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`control and mainlienance of ion flux intensitiyand‘: uniformity within Selected
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`process limits and Within selected process energy ranges, Control and maintenance .
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`of ion flux intensity andruniformity are often’difficult to achieve using conventional
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`techniques. For instance, capacitive coupling between high voltage selections a
`of the cbil and the plasma discharge often cause high-and'uncontrollable plasma
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`potentials relative to ground.
`It is generally/understood that voltage difference
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`between: the plasma and ground can cause damaging high energy ion bombardment
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`of articles being processed by the plasma, as illustrated by_U.S. Patent No.
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`. 5,234,529 in the name ‘of' Johnson.
`It is further often understood that rf '
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`component of the plasma potential varies in. time since it is derived from a
`coupling to time varying
`excitation. Hence, the energy of charged particles
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`from plasma in conventional inductive sources is spread over arelatively wide
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`range of energies, Which undesirably tends to' introduce uncontrblled variations in
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`the processing of articles by the plasma.
`The voltage difference between the region just outside of a plasma
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`',source and the processing chamber can be modified by introducing. internal
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`conduCtive shields or electrOde elements into theiprocesvsing apparatus downstream
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`‘ of the source. When the plasma potential is elevated with respect to these shield
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`electrodes, however, there is a tendency “to generate an undesirable capacitive
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`discharge betweenthe shield and plasma source; These electrode elements are
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`often a-source of contamination and thelikelziihood for contamination is even
`greater when there is capacitive discharge (ionvbombardmen't from capacitive _'
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`discharge is a potential source of sputtered material). ' Contamination is damaging I
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`to the manufacture of integrated circuit devices. '.
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`Another limitation is that the'shieldor electrode elements generally
`require small holes therein‘as StruCtural elements. These small holes are designed
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`to allow gas to flow therethrough. The smzill hoiles, however, tend to introduce"
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`unwanted pressure drops and neutral species reccimbination.
`If the holes are made
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`larger, the plasma from the source tends to survive transport thrOugh the holes and
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`unWanted downstream charge flux will often: result.
`In addition, undesirable
`discharges to these holes in shields can, at times, produce an even more
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`undesirable hollow cathode: effect.
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`In conventiOnal helical resonator designs, conductive external
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`shields are interposed between the inductive“ power'(e.g., coil, etc.) and walls ‘of a
`the vacuum veSsel containing the plasma.
`:variety limitations with these external
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`capacitive shielded plasmaigdesigns (e.g., helical resonator, inductive discharge,
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`etc.) have been observed.
`‘ In particular, the capacitiver shielded design often
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`produces plasmas that are difficult to tune even ignite. Alternatively, the use
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`of unshielded plasma sources (e.g., conventional quarter-wave resonator,
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`Conventionalhalf—wave resonator, etc.) attainga substantial plasma potential from»
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`Capacitive coupling to the‘coil, and hence are prOne tozcreate uncontrolledparasitic
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`_ plasma currents to grounded surfaces: Accordingly, the use of either the shielded
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`or the unshielded sources using conventional quarter and half-wave rf frequencies
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`produce undesiraple results.
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`In many conventional plasma sources a means of cooling. is required
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`to maintain the plasma source and substrates'being treated below a maximum
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`temperature limit. Power dissipation in the structure causes heating and thereby
`increases the difficulty and expense of implementing effective cooling means.
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`Inductive currents may also be coupled froth: ltheexcitation coil into internal or
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`capacitive shieldsiand‘these currents are an additional source of undesirable power
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`loss and" heating. Conventional capacitive i[shielding in helical resonator discharges
`I utilized-a shield which was: substantially split along the long axis of the resonator
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`to lessen eddy current loss; ' However, sucha shield substantially perturbs the
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`resonator characteristics owing to unwanted3 capacitive coupling and Current which
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`flows from the coil to the ‘shield.
`Since there are no general design equations, nor
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`are properties'cufrently known for resonators which are "loaded" with a shield I
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`along‘the axis, sources using this design must be sized: and made to work by trial
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`and error.
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`In inductive discharges, it is highly desirable to be able to
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`substantially control the plasma potential'relaitive to ground potential, independent
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`of input power, pressure, gas composmon and other variables.
`In many cases, it
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`is desired to have the'plasma potential bevs'iiibstaiitially-at ground potential (at least
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`offset from ground potential by an amount insignificantly, different from the
`floatin'g‘potential ior intrinsic DC plasma‘poftential).
`For exam 1e, whena plasma
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`‘ source is utilized {to generate neutral species to be transported downstream of the
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`source for use in fashing resist'on a semiconductor device substrate (a wafer or flat
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`panel electronic'display), the concentration and potential of charged plasma species
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`in the reaction zone are desirably reduced to avoid charging damage from electron
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`or ionic‘current from the plasma to the device. When there is a substantial
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`potential difference between plasma in the source and grounded surfaces beyond
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`the source, there is a tendency for unwanted parasitic plasma discharges to form
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`outside of the source-region
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`’ Another undesirable effect of potential difference is the acceleration
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`of ions toward grounded surfaces and subsequent impact of the energetic ions with
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`surfaces. High energy ionibombardm'ent may cause. lattice damage to the device
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`substrate being processed and may Cause
`chamber wall or other chamber
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`materials to sputter and contaminate deVice twafers.
`In other plasma processing
`‘ procedures, however, some ion bombardment may be necessary or desirable, as is
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`the case particulain for anisotropic ionyindliiced plasma etching procedures (for a
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`I discuSsion of ion-enhanced plasma etching mechanisms S_e§ Flamm (Ch. 2,pp.94-
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`183 in hlasma Etching, An’ Introduction, Di M. ‘Manos and D.L. Flamm, eds.,
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`Academic Press, 1989)). Consequently, luncontrolled‘po'tential differences, such as'
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`that caused. by "stray" Capacitive couplingsfrfom the coil of an inductive plasma
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`source to the plasma, are undesirable.
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`Referring to the above limitations, conventional plasma sources also
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`have disadvantages when, used in conventional plasma enhanced .CVD techniques.
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`These techniques commonly form a reaction of a gas composition in a plasma
`discharge. One conventional plasmaenhanced technique relies upon ions aiding in _-
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`rearranging and stabilizingfthe film, provided the bombardment from the plasma is
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`not sufficiently ehergetic to damage the underlyihg' substrate or the growing film.
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`Conventional resonators and other types of ihduqtiVe discharges often produce ,
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`parasitic plasma currents. from capacitive coupling, which often detrimentally
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`influences film quality, e.g., an inferior film, etc. These parasitic plasma currents
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`are often uncontrollable, and highly undesirable. TheSe plasma sources also have _
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`disadvantages in other plasma‘processing techniques such as ion—assisted etching,
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`and others. Of course, the particular disadvantage will often depend'upon the ‘
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`application.
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`To clarify certain concepts usedin this application,» it will be
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`convenient to introduce these definitiOns.
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