UNITED STATES PATENT AND TRADEMARK OFFICE
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`BEFORE THE PATENT TRIAL AND APPEAL BOARD
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`INTEL CORPORATION, GLOBALFOUNDRIES U.S., INC.,
`AND MICRON TECHNOLOGY, INC.,
`Petitioners,
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`v.
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`DANIEL L. FLAMM,
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`Patent Owner.
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`PTAB Case No. IPR2017-00279
`Patent No. RE40,264 E
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`DECLARATION OF DR. JOHN BRAVMAN IN SUPPORT OF PETITION
`FOR INTER PARTES REVIEW OF U.S. PATENT NO. RE40,264
`(Claims 13-26 and 64-65)
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`Page 1 of 246
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`Samsung Exhibit 1006
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`TABLE OF CONTENTS
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`Page
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`I.
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`INTRODUCTION AND SUMMARY OF TESTIMONY ............................ 1
`A. Qualifications ....................................................................................... 1
`1.
`Education ................................................................................... 1
`2.
`Career ......................................................................................... 2
`3.
`Publications ................................................................................ 4
`4.
`Curriculum Vitae ........................................................................ 5
`Compensation ....................................................................................... 5
`B.
`C. Materials Reviewed .............................................................................. 5
`D.
`Level of Ordinary Skill in the Art ........................................................ 8
`II. OVERVIEW REGARDING TECHNOLOGY ............................................ 10
`A.
`Priority Date ....................................................................................... 10
`1.
`The Challenged Independent Claim ........................................ 11
`2.
`The Disclosure of Application No. 08/567,224, Filed on
`December 4, 1995 .................................................................... 11
`State of the Art from the Perspective of a Person of Ordinary
`Skill in the Art of the Time of the Alleged Invention ........................ 14
`1.
`In situ Multiple Temperature Processing ................................. 14
`2.
`Designing Substrate Holders to Have a Selected Thermal
`Mass ......................................................................................... 18
`Background and General Description of the ’264 Patent .................. 23
`Claim Construction ............................................................................ 29
`1.
`“Selected thermal mass” .......................................................... 30
`2.
`“The thermal mass of the substrate holder is selected for
`a predetermined temperature change within a specific in-
`terval of time” .......................................................................... 31
`III. OVERVIEW OF THE PRIOR ART ............................................................ 33
`A.
`Standard for Invalidity........................................................................ 33
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`B.
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`C.
`D.
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`-i-
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`TABLE OF CONTENTS
`(continued)
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`Page
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`B.
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`C.
`D.
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`E.
`F.
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`G.
`H.
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`Background on Muller ....................................................................... 35
`1.
`General overview of Muller ..................................................... 35
`2.
`Summary of Muller .................................................................. 39
`Reasons to combine Muller with Kadomura ...................................... 39
`Background on Matsumura ................................................................ 41
`1.
`General overview of Matsumura ............................................. 41
`2.
`Summary of Matsumura .......................................................... 44
`Reasons to combine Matsumura with Muller .................................... 44
`Background on Kadomura ................................................................. 49
`1.
`General overview of Kadomura ............................................... 49
`2.
`Summary of Kadomura ............................................................ 57
`Reasons to combine Kadomura with Matsumura .............................. 57
`Background on Anderson ................................................................... 61
`1.
`General overview of Anderson ................................................ 61
`2.
`Summary of Anderson ............................................................. 63
`I. Motivation to Combine Anderson with Muller and Matsumura ....... 64
`J. Motivation to Combine Anderson with Kadomura and Matsu-
`mura .................................................................................................... 66
`Background on Hinman ..................................................................... 68
`1.
`General overview of Hinman ................................................... 68
`2.
`Summary of Hinman ................................................................ 71
`L. Motivation to Combine Hinman with Muller, Matsumura and
`Anderson ............................................................................................ 71
`M. Motivation to Combine Hinman with Kadomura, Matsumura
`and Anderson ...................................................................................... 74
`Background on Kikuchi ..................................................................... 77
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`K.
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`N.
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`TABLE OF CONTENTS
`(continued)
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`Page
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`O.
`P.
`Q.
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`T.
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`General overview of Kikuchi ................................................... 77
`1.
`Summary of Kikuchi ................................................................ 82
`2.
`Reasons to combine Kikuchi with Muller and Matsumura................ 82
`Reasons to combine Kikuchi with Kadomura and Matsumura ......... 86
`Background on Moslehi ’849 ............................................................. 89
`1.
`General overview of Moslehi ’849 .......................................... 89
`2.
`Summary of Moslehi ’849 ....................................................... 91
`R. Motivation to Combine Moslehi ’849 with Muller, Matsumura
`and Anderson ...................................................................................... 91
`S. Motivation to Combine Moslehi ’849 with Kadomura, Matsu-
`mura and Anderson ............................................................................ 93
`Background on Wright (A Closed Loop Temperature Control
`System for a Low-Temperature Etch Chuck) .................................... 95
`1.
`General overview of Wright .................................................... 95
`2.
`Summary of Wright ............................................................... 100
`U. Motivation to Combine Wright with Muller, Matsumura and
`Anderson .......................................................................................... 100
`IV. MULLER, MATSUMURA, ANDERSON, HINMAN, KIKUCHI,
`WRIGHT AND MOSLEHI ’849 RENDERED CLAIMS 13-26 AND
`64-65 OBVIOUS ........................................................................................ 102
`A. Muller, Matsumura, Anderson and Hinman rendered claim 13
`obvious ............................................................................................. 103
`1. Muller disclosed what is recited in the preamble of claim
`13 ............................................................................................ 103
`2. Muller in view of Anderson disclosed claim 13, limita-
`tion [a] .................................................................................... 103
`3. Muller in view of Matsumura disclosed claim 13, limita-
`tion [b] .................................................................................... 108
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`TABLE OF CONTENTS
`(continued)
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`Page
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`4. Muller in view of Matsumura disclosed claim 13, limita-
`tion [c] .................................................................................... 114
`5. Muller in view of Matsumura disclosed claim 13, limita-
`tion [d] .................................................................................... 117
`6. Muller disclosed claim 13, limitation [e] ............................... 118
`7. Muller, Matsumura, Anderson and Hinman disclosed
`claim 13, limitation [f] ........................................................... 119
`B. Muller, Matsumura, Anderson and Hinman rendered claim 14
`obvious ............................................................................................. 127
`C. Muller, Matsumura, Anderson and Hinman rendered claim 15
`obvious ............................................................................................. 130
`D. Muller, Matsumura, Anderson and Hinman rendered claim 16
`obvious ............................................................................................. 133
`E. Muller, Matsumura, Anderson, Hinman and Kikuchi rendered
`claim 17 obvious .............................................................................. 135
`F. Muller, Matsumura, Anderson and Hinman rendered claim 18
`obvious ............................................................................................. 136
`G. Muller, Matsumura, Anderson and Hinman, alone or further in
`view of Wright rendered claim 19 obvious ...................................... 137
`H. Muller, Matsumura, Anderson and Hinman further in view of
`Wright rendered claim 20 obvious ................................................... 142
`I. Muller, Matsumura, Anderson and Hinman rendered claim 21
`obvious ............................................................................................. 144
`J. Muller, Matsumura, Anderson and Hinman rendered claim 22
`obvious ............................................................................................. 146
`K. Muller, Matsumura, Anderson and Hinman rendered claim 23
`obvious ............................................................................................. 147
`L. Muller, Matsumura, Anderson and Hinman in view of Moslehi
`’849 rendered claim 24 obvious ...................................................... 149
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`TABLE OF CONTENTS
`(continued)
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`Page
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`M. Muller, Matsumura, Anderson and Hinman in view of Moslehi
`’849 rendered claim 25 obvious ....................................................... 152
`N. Muller, Matsumura, Anderson and Hinman in view of Moslehi
`’849 rendered claim 26 obvious ....................................................... 154
`O. Muller, Matsumura, Anderson and Hinman rendered claim 64
`obvious ............................................................................................. 156
`P. Muller, Matsumura, Anderson and Hinman rendered claim 65
`obvious ............................................................................................. 156
`V. KADOMURA, MATSUMURA, ANDERSON, HINMAN, KIKU-
`CHI, AND MOSLEHI ’849 RENDERED CLAIMS 13-26 AND 64-
`65 OBVIOUS .............................................................................................. 157
`A. Kadomura, Matsumura, Anderson and Hinman rendered claim
`13 obvious ........................................................................................ 158
`1.
`Kadomura disclosed what is recited in the preamble of
`claim 13 .................................................................................. 158
`Kadomura in view of Anderson disclosed claim 13, limi-
`tation [a] ................................................................................. 158
`Kadomura disclosed claim 13, limitation [b]......................... 162
`Kadomura disclosed claim 13, limitation [c] ......................... 171
`Kadomura and Matsumura disclosed claim 13, limitation
`[d] ........................................................................................... 173
`Kadomura disclosed claim 13, limitation [e] ......................... 174
`Kadomura, Matsumura, Anderson and Hinman disclosed
`claim 13, limitation [f] ........................................................... 176
`B. Kadomura, Matsumura, Anderson and Hinman rendered claim
`14 obvious ........................................................................................ 185
`C. Kadomura, Matsumura, Anderson and Hinman or Kadomura,
`Matsumura, Anderson, Hinman and Muller rendered claim 15
`obvious ............................................................................................. 186
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`2.
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`3.
`4.
`5.
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`6.
`7.
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`TABLE OF CONTENTS
`(continued)
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`Page
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`E.
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`F.
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`D. Kadomura, Matsumura, Anderson and Hinman rendered claim
`16 obvious ........................................................................................ 189
`Kadomura, Matsumura, Anderson and Hinman in view of
`Kikuchi rendered claim 17 obvious ................................................. 191
`Kadomura, Matsumura, Anderson and Hinman rendered claim
`18 obvious ........................................................................................ 193
`G. Kadomura, Matsumura, Anderson and Hinman rendered claim
`19 obvious ........................................................................................ 193
`H. Kadomura, Matsumura, Anderson and Hinman rendered claim
`20 obvious ........................................................................................ 196
`Kadomura, Matsumura, Anderson and Hinman rendered claim
`21 obvious ........................................................................................ 198
`Kadomura, Matsumura, Anderson and Hinman rendered claim
`22 obvious ........................................................................................ 199
`K. Kadomura, Matsumura, Anderson and Hinman rendered claim
`23 obvious ........................................................................................ 200
`Kadomura, Matsumura, Anderson and Hinman in view of Mos-
`lehi ’849 rendered claim 24 obvious ................................................ 202
`M. Kadomura, Matsumura, Anderson and Hinman in view of Mos-
`lehi ’849 rendered claim 25 obvious ................................................ 205
`N. Kadomura, Matsumura, Anderson and Hinman in view of Mos-
`lehi ’849 rendered claim 26 obvious ................................................ 206
`O. Kadomura, Matsumura, Anderson and Hinman rendered claim
`64 obvious ........................................................................................ 208
`Kadomura, Matsumura, Anderson and Hinman rendered claim
`65 obvious ........................................................................................ 209
`VI. CONCLUSION ........................................................................................... 210
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`I.
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`J.
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`L.
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`P.
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`I.
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`INTRODUCTION AND SUMMARY OF TESTIMONY
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`
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` My name is John Bravman. I have been retained in the above-1.
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`referenced inter partes review proceeding by Intel Corporation, Micron Technolo-
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`gy, Inc., and GlobalFoundries U.S., Inc. (collectively, “Petitioners”) to evaluate
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`United States Patent No. RE40,264 (the “’264 patent”) against certain prior art ref-
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`erences, specifically U.S. Patent Nos. 6,063,710, 5,151,871, 5,226,056, 5,605,600,
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`5,192,849, and 3,863,049, U.S. Statutory Invention Registry H1145, as well as the
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`knowledge of a person of skill in the art at the time of the purported invention in-
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`cluding as demonstrated by various state of the art references. The ’264 patent is
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`attached as Exhibit 1001 to Petitioners’ petition for Inter Partes Review of U.S.
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`Patent No. RE40,264 (“Petition”). I understand that Petitioners seek review of
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`claims 13-26, 64, and 65 in their Petition. As detailed in this declaration, it is my
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`opinion that each of the challenged claims is rendered obvious by prior art refer-
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`ences that predate the priority date of the ’264 patent. If requested by the Patent
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`Trial and Appeal Board (“PTAB” or “Board”), I am prepared to testify about my
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`opinions expressed in this declaration.
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`A. Qualifications
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`1.
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`2.
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`Education
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`I received my Bachelors of Science degree in Materials Science and
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`Engineering at Stanford University in 1979. I later received a Master’s of Science
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`in Materials Science and Engineering from Stanford University in 1981, and I was
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`awarded a Ph.D. in Materials Science and Engineering from Stanford University in
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`1984, specializing in semiconductor processing and materials analysis. My thesis
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`was entitled “Morphological Aspects of Silicon - Silicon Dioxide VLSI Interfac-
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`es,” and concerned structural analyses of silicon-silicon dioxide interfaces, as
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`found in integrated circuit devices—specifically very-large-scale integration devic-
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`es.
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`2.
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`3.
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`Career
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`I will discuss my current position first, followed by a synopsis of my
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`career and work from when I received my Ph.D. to the present.
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`4.
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`I am currently employed as the President and as a Professor of Elec-
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`trical Engineering at Bucknell University in Lewisburg, Pennsylvania. As the
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`President of Bucknell, I am the chief administrator at the university and am re-
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`sponsible for helping to set university policy and priorities, alumni relations, and
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`university advancement.
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`5.
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`From 1979 to 1984, while a graduate student at Stanford, I was em-
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`ployed part-time by Fairchild Semiconductor in their Palo Alto Advanced Re-
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`search Laboratory. I worked in the Materials Characterization group. In 1985, up-
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`on completion of my doctorate, I joined the faculty at Stanford as Assistant Profes-
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`sor of Materials Science and Engineering. I was promoted to Associate Professor
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`with tenure in 1991, and achieved the rank of Professor in 1995. In 1997 I was
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`named to the Bing Professorship.
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`6.
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`I served as Chairman of Stanford University’s Department of Materi-
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`als Science and Engineering from 1996-1999, and the Director of Stanford’s Cen-
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`ter for Materials Research from 1998-1999. I served as Senior Associate Dean of
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`the School of Engineering from 1992 to 2001 and the Vice Provost for Undergrad-
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`uate Education from 1999 to 2010.
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`7.
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`On July 1, 2010, I retired from Stanford University and began service
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`as the President of Bucknell University, where I also became a Professor of Elec-
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`trical Engineering.
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`8.
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`I have worked for more than 25 years in the areas of thin film materi-
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`als processing and analysis. Much of my work has involved materials for use in
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`microelectronic interconnects and packaging, and in superconducting structures
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`and systems. I have also led multiple development efforts of specialized equip-
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`ment and methods for determining the microstructural and mechanical properties
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`of materials and structures.
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`9.
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`I have taught a wide variety of courses at the undergraduate and grad-
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`uate level in materials science and engineering, emphasizing both basic science
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`and applied technology, including coursework in the areas of integrated circuit ma-
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`terials and processing. More than two thousand students have taken my classes,
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`and I have trained 24 doctoral students, most of whom now work in the microelec-
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`tronics and semiconductor processing industries.
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`10.
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`In the course of my research, my research group made extensive use
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`of plasma semiconductor processing equipment for depositing and etching films of
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`both simple (e.g., elemental) and complex (e.g., multi-element compound) materi-
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`als, including semiconductor processing that monitored and controlled temperature
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`during processing.
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`11.
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`I am or have been a member of many professional societies, including
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`the Materials Research Society, the Institute of Electrical and Electronic Engineers,
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`Electron Microscopy Society of America, the American Society of Metals, the
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`Metallurgical Society of AIME, the American Chemical Society, and the American
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`Physical Society. I served as President of the Materials Research Society in 1994.
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`3.
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`12.
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`Publications
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`I am a named inventor on two United States patents relating to the de-
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`livery of medicinal compounds using particular material compositions. The patent
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`numbers and titles as well as my co-inventors are listed on my curriculum vitae at-
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`tached to this declaration as Appendix A.
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`13.
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`I am author or co-author of over 160 peer-reviewed articles and con-
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`ference proceedings, nearly all of which relate to semiconductor processing and/or
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`integrated circuits. The titles, publication information and my co-authors are listed
`
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`on my curriculum vitae attached to this declaration as Appendix A.
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`14.
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`I am also the author, co-author, or editor of 8 edited works related to
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`semiconductor processing or materials.
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`4.
`Curriculum Vitae
` Additional details of my education and employment history, recent
`15.
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`professional service, patents, publications, and other testimony are set forth in my
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`current curriculum vitae, attached to this declaration as Appendix A.
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`B. Compensation
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`16.
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`In connection with my work as an expert, I am being compensated at a
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`rate of $450.00 per hour for consulting services including time spent testifying at
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`any hearing that may be held. I am also being reimbursed for reasonable and cus-
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`tomary expenses associated with my work in this case. I receive no other forms of
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`compensation related to this case. No portion of my compensation is dependent or
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`otherwise contingent upon the results of this proceeding or the specifics of my tes-
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`timony.
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`C. Materials Reviewed
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`17.
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`In formulating my opinions in this matter, I have reviewed the ’264
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`patent (Ex. 10011) and its prosecution history. I have also reviewed the following
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`materials:
`
`Ex. 1001 U.S. Patent No. RE40,264 (“’264 patent”)
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`Ex. 1002 U.S. Patent No. 5,605,600 (“Muller”)
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`Ex. 1003 U.S. Patent No. 5,151,871 (“Matsumura”)
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`Ex. 1004 U.S. Patent No. 5,226,056 (“Kikuchi”)
`
`Ex. 1005 U.S. Patent No. 6,063,710 (“Kadomura”)
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`Ex. 1007 U.S. Patent Application No. 08/567,224 (“’224 application”)
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`Ex. 1008 Wright, D.R. et al., A Closed Loop Temperature Control System for
`a Low-Temperature Etch Chuck, Advanced Techniques for Inte-
`grated Processing II, Vol. 1803 (1992), pp. 321–329 (“Wright”)
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`Ex. 1009 U.S. Patent No. 5,192,849 (“Moslehi ’849”)
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`Ex. 1010 U.S. Patent No. 3,863,049 (“Hinman”)
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`Ex. 1011 U.S. Statutory Invention Registration No. H1145 (“Anderson”)
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`Ex. 1012 U.S. Patent No. 4,331,485 (“Gat”)
`
`Ex. 1013 U.S. Patent No. 5,393,374 (“Sato”)
`
`Ex. 1014
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`Incropera, Frank P. et al, Fundamentals of Heat and Mass Transfer,
`Third Edition, 1981 (“Incropera”)
`
`
`
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`The citations in this declaration to an “Exhibit” or “Ex.” refer to the Exhibits
`
` 1
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`to the Petition.
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`
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`Ex. 1015
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`Ex. 1016
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`Ex. 1017
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`Ex. 1018
`
`Ex. 1019
`
`CRC Handbook of Chemistry and Physics: A Ready-Reference
`Book of Chemical and Physical Data, 71st Edition, CRC Press, Inc.,
`1974 (“CRC Handbook”)
`
`PTAB Decision Denying Institution of Inter Partes Review, Lam
`Research Corp. v. Daniel L. Flamm, IPR2015-01759, Paper 7 (Feb-
`ruary 24, 2016)
`
`PTAB Decision Denying Institution of Inter Partes Review, Lam
`Research Corp. v. Daniel L. Flamm, IPR2016-00468, Paper 6 (June
`30, 2016)
`
`PTAB Institution of Inter Partes Review, Lam Research Corp. v.
`Daniel L. Flamm, IPR2015-01764, Paper 7 (February 24, 2016)
`
`Petition for Inter Partes Review, Lam Research Corp. v. Daniel L.
`Flamm, IPR2015-01764, Paper 1 (August 18, 2015)
`
`Ex. 1020 Declaration of Scott Bennett, Ph.D. regarding Exhibit 1014
`
`Ex. 1021 Declaration of Rachel J. Watters regarding Exhibit 1015
`
`Ex. 1022 Declaration of Rachel J. Watters regarding Exhibit 1008
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`I also refer to my curriculum vitae, which is attached as Appendix A to this decla-
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`ration.
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`18.
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`In connection with live testimony in this proceeding, should I be
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`asked to provide it, I may use as exhibits various documents that refer to or relate
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`to the matters contained within this declaration, or which are derived from the re-
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`sults and analyses discussed in this declaration. Additionally, I may create or su-
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`pervise the creation of certain demonstrative exhibits to assist me in testifying.
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`19.
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`I am prepared to use any or all of the above-referenced documents,
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`and supplemental charts, models, and other representations based on those docu-
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`ments, to support my live testimony in this proceeding regarding my opinions cov-
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`ering the ’264 patent. If called upon to do so, I will offer live testimony regarding
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`the opinions in this declaration.
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`D. Level of Ordinary Skill in the Art
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`20.
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`It is my understanding that the claims and specification of a patent
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`must be read and construed through the eyes of a person of ordinary skill in the art
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`as of the priority date of the claims at issue. Counsel has also advised me that to
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`determine the appropriate level of one of ordinary skill in the art, the following fac-
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`tors may be considered: (a) the types of problems encountered by those working in
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`the field and prior art solutions to those problems; (b) the sophistication of the
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`technology in question, and the rapidity with which innovations occur in the field;
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`(c) the educational level of active workers in the field; and (d) the educational level
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`of the inventor.
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` The relevant technology fields for the ’264 patent are semiconductor
`21.
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`processing and semiconductor processing equipment. In my opinion, for the pur-
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`poses of the ’264 patent, a person of ordinary skill in the art, as of the priority date
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`for the ’264 patent, would have generally have had either (i) a Bachelor’s degree in
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`chemical engineering, materials science engineering, electrical engineering, phys-
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`ics, chemistry, or a similar field, and three or four years of work experience in
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`semiconductor manufacturing or related fields, (ii) a Master’s degree in chemical
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`engineering, materials science engineering, electrical engineering, physics, chemis-
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`try, or a similar field, and two or three years of work experience in semiconductor
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`manufacturing or related fields, or (iii) a Ph.D. or equivalent doctoral degree in
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`chemical engineering, materials science engineering, electrical engineering, phys-
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`ics, chemistry, or a similar field, who had performed research related to semicon-
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`ductor manufacturing or related fields.
`
` Based on this understanding of a person of ordinary skill in the art at
`22.
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`the time of the alleged invention for the ’264 patent, I believe that I am at least a
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`person having ordinary skill in the art for purposes of the ’264 patent, and that I
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`was one prior to September 11, 1997. For example, my qualifications and experi-
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`ences discussed above, and in my curriculum vitae (Appendix A), demonstrate my
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`familiarity with and knowledge of the art of the ’264 patent. I therefore believe
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`that I am qualified to offer this declaration as to how such a person would have in-
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`terpreted the ’264 patent and the prior art prior to September 11, 1997. Unless oth-
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`erwise stated, my statements below refer to the knowledge, beliefs and abilities of
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`a person having ordinary skill in the art of the ’264 patent at the time of the pur-
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`ported invention of the ’264 patent.
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`II. Overview Regarding Technology
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`A.
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`23.
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`Priority Date
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`I have been informed that a claim of a patent is not entitled to the pri-
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`ority date of an earlier application if that application does not disclose all limita-
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`tions of the claim in question.
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` The ’264 patent is a reissue of U.S. Patent No. 6,231,776 (the “’776
`24.
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`Patent”). The ’264 patent issued on April 29, 2008 from a reissue application filed
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`on May 14, 2003. The ’776 patent issued from Application No. 09/151,163, filed
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`on September 10, 1998. The ’776 patent claims priority to Provisional Application
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`No. 60/058,650, filed on September 11, 1997, and further claims priority as a con-
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`tinuation-in-part of Application No. 08/567,224, filed on December 4, 1995 (the
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`“’224 application.”)
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`25.
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`It is my opinion that claims 13-26, 64, and 65 of the ’264 patent
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`(“challenged claims”) are not entitled to a priority date earlier than September 11,
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`1997. I express no opinion regarding the correctness of the September 11, 1997 or
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`September 10, 1998 priority date, but I will use September 11, 1997 for purposes
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`of this declaration. In my opinion, however, December 4, 1995 is not the correct
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`priority date for the challenged claims because application No. 08/567,224 does
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`not disclose or adequately support the subject matter claimed in the challenged
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`claims.
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`1. The Challenged Independent Claim
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` Among other limitations, claim 13 recites “wherein the thermal mass
`26.
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`of the substrate holder is selected for a predetermined temperature change within a
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`specific interval of time during processing; the predetermined temperature change
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`comprises the change from the selected first substrate holder temperature to the se-
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`lected second substrate holder temperature, and the specified time interval com-
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`prises the time for changing from the selected first substrate holder temperature to
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`the selected second substrate holder temperature.”
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` Claim 13 thus requires selection of the thermal mass of a substrate
`27.
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`holder (such as a chuck) specifically for changing the temperature of the substrate
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`holder from a predetermined first temperature to a predetermined second tempera-
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`ture within a specific interval of time during processing.
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`2. The Disclosure of Application No. 08/567,224, Filed on Decem-
`ber 4, 1995
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`28.
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`In my opinion, the ’224 application, filed on December 4, 1995, does
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`not include written description sufficient to support any of claims 13-26, 64 and 65
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`of the ’264 patent. Thus, the challenged claims are entitled to a priority date of no
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`earlier than September 11, 1997, the date of Provisional Application No.
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`60/058,650.
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`29.
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` Specifically, claim 13 recites selecting a substrate holder specifically
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`for a predetermined temperature change within a preselected time.
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`Page 18 of 246
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` To start with, the ’224 application failed to disclose selecting the
`30.
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`thermal mass of a substrate holder. Based on my review, it is my opinion that the
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`concept of thermal mass and using it to design a substrate holder is simply absent
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`from the ’224 application. For example, the ’224 application does not include the
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`phrase “thermal mass” at all. The ’224 application similarly does not discuss
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`choosing the mass or the material of a substrate holder.
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`31.
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`I was unable to find any discussion in the ’224 Application of chang-
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`ing the temperature of a substrate holder from a first temperature to a second tem-
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`perature in a specific interval of time. The only disclosure of two-temperature pro-
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`cessing in the ’224 application is a disclosure of a technique well known at the
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`time, changing the temperature by transferring a wafer between substrate holders
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`held at different temperatures. Specifically, the ’224 application disclosed chang-
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`ing the temperature during plasma ashing by transferring the wafer from a first re-
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`sist stripping chamber with a half-wave helical resonator, in which a wafer is pro-
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`cessed at a low temperature, to a second chamber with a resonator operating at a
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`full-wave multiple, in which a wafer is processed at a higher temperature:
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`An implant resist stripping process was performed to re-
`move the top implant hardened resist. This occurred by
`stripping using an “un-balanced” phase and anti-phase
`coupling relationship in a half-wave helical resonator.
`The half-wave helical resonator was configured in one of
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`the process chambers. In this chamber, the pedestal had a
`temperature of about 40ºC to maintain a low wafer tem-
`perature. This low wafer temperature was maintained to
`reduce the possibility of “popping.” Popping occurs
`when vapor in the underlying photoresist explodes
`through the implant hardened resist.
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`After the top hardened layer was removed. The wafer
`was transferred into a chamber operating at a full-wave
`multiple. This chamber operated at a frequency of about
`27.12 MHz at a full-wave multiple. The pedestal of this
`chamber was at 150 to 200ºC. The full-wave structure
`provided for balanced pha