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`UNITED STATES PATENT AND TRADEMARK OFFICE
`__________________________
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`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`__________________________
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`MICRON TECHNOLOGY, INC., INTEL CORPORATION,
`AND GLOBALFOUNDRIES U.S., INC.
`Petitioners
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`SAMSUNG ELECTRONICS COMPANY, LTD.
`Petitioner
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`v.
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`DANIEL L. FLAMM
`Patent Owner
`__________________________
`
`Case IPR. No. Unassigned
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`U.S. Patent No. 5,711,849
`Title: PROCESS OPTIMIZATION IN GAS PHASE DRY ETCHING
`__________________________
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`Page 1 of 104
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`Samsung Exhibit 10(cid:21)4
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`

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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
`
`
`Petition for Inter Partes Review of U.S. Patent No. 5,711,849 Under
`35 U.S.C. §§ 311-319 and 37 C.F.R. §§ 42.1-.80, 42.100-
`.123__________________________
`
`
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`
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`Mail Stop “PATENT BOARD”
`Patent Trial and Appeal Board
`U.S. Patent and Trademark Office
`P.O. Box 1450
`Alexandria, VA 22313-1450
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`Page 2 of 104
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`1.
`2.
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`3.
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`5.
`6.
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`7.
`8.
`
`9.
`
`INTRODUCTION .......................................................................................... 1 
`REQUIREMENTS FOR PETITION FOR INTER PARTES REVIEW
`1
`
`2.1. Grounds for Standing (37 C.F.R. § 42.104(a)) .................................... 1 
`2.2. Notice of Lead and Backup Counsel and Service Information ............ 1 
`2.3. Notice of Real-Parties-in-Interest (37 C.F.R. § 42.8(b)(1)) ................. 3 
`2.4. Notice of Related Matters (37 C.F.R. § 42.8(b)(2)) ............................. 3 
`2.5. Fee for Inter Partes Review ................................................................. 4 
`2.6. Proof of Service .................................................................................... 4 
`IDENTIFICATION OF CLAIMS BEING CHALLENGED (§
`42.104(B)) ....................................................................................................... 4 
`OVERVIEW OF THE 849 U.S. PATENT 5 NO. 5,711,849
`4.
`
`849 PATENT PROSECUTION HISTORY ................................................. 11 
`CLAIM CONSTRUCTION ......................................................................... 12 
`6.1. Applicable Law .................................................................................. 12 
`6.2. Construction of Claim Terms ............................................................. 13 
`6.2.1. “surface reaction rate constant” (all claims) .......................... 13 
`PERSON HAVING ORDINARY SKILL IN THE ART ............................ 15 
`DESCRIPTION OF THE PRIOR ART ....................................................... 16 
`8.1. Alkire (Ex. 1005) ................................................................................ 16 
`8.2. Kao (Ex. 1006) ................................................................................... 19 
`8.3. Flamm (Ex. 1007)............................................................................... 23 
`8.4. Motivations To Combine: Alkire in Combination with Kao ............ 24 
`8.5. Motivations To Combine: Alkire in Combination with Kao and
`Flamm ................................................................................................. 25 
`GROUND #1: CLAIMS 1-29 OF THE 849 PATENT ARE
`UNPATENTABLE AS OBVIOUS OVER ALKIRE IN VIEW OF
`KAO .............................................................................................................. 26 
`9.1. Claim 1 is obvious over Alkire in view of Kao ................................. 27 
`9.1.1. [1.P] “A device fabrication method comprising the steps
`of:” ......................................................................................... 27 
`
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
`
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`9.1.2. [1.1] “providing a plasma etching apparatus comprising
`a substrate therein, said substrate comprising a top
`surface and a film overlying said top surface, said film
`comprising a top film surface;” ............................................. 28 
`9.1.3. [1.2] “etching said top film surface to define a relatively
`non-uniform etching profile on said film, and defining
`etch rate data comprising an etch rate and a spatial
`coordinate which defines a position within said
`relatively non-uniform etching profile on said substrate,
`said etching comprising a reaction between a gas phase
`etchant and said film; and” .................................................... 29 
`9.1.4. [1.3] “extracting a surface reaction rate constant from
`said etch rate data, and using said surface reaction rate
`constant in the fabrication of a device.” ................................ 32 
`9.2. Claim 10 is obvious over Alkire in view of Kao ............................... 37 
`9.2.1. [10.P] “A method of designing a reactor comprising the
`steps of:” ................................................................................ 37 
`9.2.2. [10.1] “providing a first plasma etching apparatus
`comprising
`a
`substrate
`therein,
`said
`substrate
`comprising a top surface and a film overlying said top
`surface, said film comprising a top film surface” .................. 37 
`9.2.3. [10.2] “etching said top film surface to define a
`relatively non-uniform etching profile on said film, and
`defining etch rate data comprising an etch rate and a
`spatial coordinate which defines a position within said
`relatively non-uniform etching profile on said film of
`said substrate, said etching comprising a reaction
`between a gas phase etchant and said film; and” ................... 37 
`9.2.4. [10.3] “extracting a surface reaction rate constant from
`said etch rate data, and using said surface reaction rate
`constant
`in designing a second plasma etching
`apparatus.”.............................................................................. 38 
`9.3. Claim 20 is obvious over Alkire in view of Kao ............................... 39 
`9.3.1. [20.p] “A substrate fabrication method, using a plasma
`etching apparatus, said method comprising:” ........................ 39 
`
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
`
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`9.3.2. [20.1] “providing a substrate selected from a group
`consisting of a semiconductor wafer, a plate, and a flat
`panel display, said substrate comprising a top surface;” ....... 39 
`9.3.3. [20.2] “forming a film overlying said top surface, said
`film comprising a top film surface;” ...................................... 40 
`9.3.4. [20.3] “etching said top film surface to define a
`relatively non-uniform profile on said film, and defining
`etch rate data comprising an etch rate and a spatial
`coordinate which defines a position within said
`relatively non-uniform etching profile of said film on
`said substrate, said etching comprising a reaction
`between a gas phase etchant and said film; and” ................... 40 
`9.3.5. [20.4] “extracting a surface reaction rate constant from
`said etch rate data, and using said surface reaction rate
`constant.” ................................................................................ 40 
`9.4. Claim 22 is obvious over Alkire in view of Kao ............................... 40 
`9.4.1. [22.P] “A method of fabricating an integrated circuit
`device, using a plasma etching apparatus, said method
`comprising:” ........................................................................... 40 
`9.4.2. [22.1] “providing a uniformity value and a surface
`reaction rate constant for an etching reaction, said
`etching reaction including a substrate and etchant
`species;” ................................................................................. 41 
`9.4.3. [22.2] “defining etching parameters providing said
`uniformity value; and” ........................................................... 42 
`9.4.4. [22.3] “adjusting at least one of said etching parameters
`using said surface reaction rate constant to produce a
`selected etching rate” ............................................................. 44 
`9.4.5. [22.4] “wherein said etching rate providing an etching
`condition for fabrication of an
`integrated circuit
`device.” .................................................................................. 46 
`9.5. Claim 26 is obvious over Alkire in view of Kao ............................... 46 
`9.5.1. [26.P] “A process for fabricating a device using a
`plasma etching apparatus, said device being fabricated
`by use of a surface reaction rate constant, said surface
`
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
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`
`reaction rate constant being derived from a method
`comprising:” ........................................................................... 46 
`9.5.2. [26.1]
`“providing
`a plasma
`etching
`apparatus
`comprising
`a
`substrate
`therein,
`said
`substrate
`comprising a top surface and a film overlying said top
`surface, said film comprising a top film surface” .................. 47 
`9.5.3. [26.2] “etching said top surface at a temperature to
`define a relatively non-uniform etching profile on said
`film, and defining etch rate data comprising an etch rate
`and a spatial coordinate which defined a position from
`said relatively non-uniform etching profile on said film
`of said substrate, said etching comprising a reaction
`between a gas phase etchant and said film; and” ................... 47 
`9.5.4. [26.3] “extracting from said etching rate data a surface
`reaction rate constant for said temperature.” ......................... 47 
`9.6. Dependent Claims 2 and 11 are obvious over Alkire in view of
`Kao ..................................................................................................... 48 
`9.6.1. [2.0] “The method of claim 1 wherein said etching step
`is diffusion limited.” .............................................................. 48 
`[11.0] “The method of claim 10 wherein said etching step
`at a postion [sic] on said relatively non-uniform etching
`profile is diffusion limited.” ..................................................... 48 
`9.7. Dependent Claims 3 and 12 are obvious over Alkire in view of
`Kao ..................................................................................................... 48 
`9.7.1. [3.0] “The method of claim 1 wherein said spatial
`coordinate includes a radius and an angle.” ........................... 48 
`[12.0] “The method of claim 10 wherein said spatial
`coordinate which defines said position along said
`relatively non-uniform etching profile includes a radius
`and an angle.” ........................................................................... 48 
`9.8. Dependent Claims 4 and 13 are obvious over Alkire in view of
`Kao ..................................................................................................... 50 
`9.8.1. [4.0] “The method of claim 1 wherein said spatial
`coordinate includes an x-direction and a y-direction.” .......... 50 
`
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
`
`
`[13.0] “The method of claim 10 wherein said spatial
`coordinate which defines said position within said
`relatively non-uniform etching profile includes an x-
`direction and a y-direction.” .................................................... 50 
`9.9. Dependent Claims 5 and 14 are obvious over Alkire in view of
`Kao ..................................................................................................... 51 
`9.9.1. [5.0] “The method of claim 1 wherein said extracting
`step correlates said surface reaction rate constant over a
`diffusivity with said etch rate, said etch rate being
`defined by said relatively non-uniform etching profile.” ...... 51 
`[14.0] “The method of claim 8 wherein said extracting
`step correlates said surface reaction rate constant over a
`diffusivity with said etch rate, said etch rate being
`defined by said relatively non-uniform etching profile.” ........ 51 
`9.10. Dependent Claims 6 and 15 are obvious over Alkire in view of
`Kao ..................................................................................................... 52 
`9.10.1. [6.0] “The method of claim 1 wherein said etch rate is
`defined by said relatively non-uniform etching profile at
`selected spatial coordinates over a time.” .............................. 52 
`[15.0] “The method of claim 10 wherein said etch rate is
`defined by said relatively non-uniform etching profile at
`selected spatial coordinates over a time.” ................................ 52 
`9.11. Dependent Claims 7 and 16 are obvious over Alkire in view of
`Kao ..................................................................................................... 53 
`9.11.1. [7.0] “The method of claim 1 wherein said etching is an
`ashing method.” ..................................................................... 53 
`[16.0] “The method of claim 10 wherein said etching is
`an ashing method.” ................................................................... 53 
`9.12. Dependent Claims 8 and 17 are obvious over Alkire in view of
`Kao ..................................................................................................... 53 
`9.12.1. [8.0] “The method of claim 7 wherein said ashing
`method comprises reactants including an oxygen and a
`photoresist.” ........................................................................... 53 
`
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
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`
`[17.0] “The method of claim 16 wherein said ashing
`method comprises reactants including an oxygen and a
`photoresist.” ............................................................................. 53 
`9.13. Claim 9 is obvious over Alkire in view of Kao ................................. 54 
`9.13.1. [9.0] “The method of claim 1 further comprising a step
`of using said reaction rate constant in adjusting said
`plasma etch apparatus.” ......................................................... 54 
`9.14. Claim 18 is obvious over Alkire in view of Kao ............................... 54 
`9.14.1. [18.0] “The method of claim 10 wherein said second
`plasma etching apparatus is a co-axial reactor.” .................... 54 
`9.15. Claim 19 is obvious over Alkire in view of Kao ............................... 55 
`9.15.1. [19.0] “The method of claim 10 wherein said second
`plasma etching apparatus
`is a plasma etching
`apparatus.”.............................................................................. 55 
`9.16. Dependent Claims 21 and 28 are obvious over Alkire in view of
`Kao ..................................................................................................... 56 
`9.16.1. [21.0] “The method of claims 1, 10, or 20 wherein said
`etching is provided whereupon chemical effects are
`enhanced over ion bombardment effects.” ............................ 56 
`[28.0] “The process of claim 26 wherein said etching is
`provided whereupon chemical effects are enhanced over
`ion bombardment effects.” ....................................................... 56 
`9.17. Claim 23 is obvious over Alkire in view of Kao ............................... 57 
`9.17.1. [23.0] “The method of claim 22 wherein said etching
`parameters can be selected from a group consisting of a
`temperature, a pressure, a power, a gap, and a flow
`rate.” ....................................................................................... 57 
`9.18. Dependent Claims 24 and 25 are obvious over Alkire in view of
`Kao ..................................................................................................... 58 
`9.18.1. [24.0] “The method of claim 22 wherein said uniformity
`value ranges from 90% and greater.”..................................... 58 
`[25.0] “The method of claim 22 wherein said uniformity
`value ranges from 95% and greater.” ....................................... 58 
`9.19. Claim 27 is obvious over Alkire in view of Kao ............................... 58 
`
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
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`9.19.1. [27.0] “The process of claim 26 wherein said surface
`reaction rate constant is derived using at least a
`diffusivity value that is determined by an equation.” ............ 58 
`9.20. Claim 29 is obvious over Alkire in view of Kao ............................... 58 
`9.20.1. [29.0] “The method of claim 26 further comprising
`using said surface reaction rate constant in a method
`selected from a group consisting of a fabrication of a
`device or of designing a reactor, said surface reaction
`rate constant being provided by at least a diffusivity
`value.” .................................................................................... 58 
`10. GROUND #2: CLAIMS 1-29 OF THE 849 PATENT ARE
`UNPATENTABLE AS OBVIOUS OVER ALKIRE IN VIEW OF
`KAO AND FLAMM .................................................................................... 59 
`11. CONCLUSION ............................................................................................. 61 
`
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
`
`
`TABLE OF CONTENTS
`
`
`Page
`INTRODUCTION .......................................................................................... 1 
`REQUIREMENTS FOR PETITION FOR INTER PARTES REVIEW ....... 1 
`2.1. Grounds for Standing (37 C.F.R. § 42.104(a)) .................................... 1 
`2.2. Notice of Lead and Backup Counsel and Service Information ............ 2 
`2.3. Notice of Real-Parties-in-Interest (37 C.F.R. § 42.8(b)(1)) ................. 5 
`2.4. Notice of Related Matters (37 C.F.R. § 42.8(b)(2)) ............................. 5 
`2.5. Fee for Inter Partes Review ................................................................. 7 
`2.6. Proof of Service .................................................................................... 7 
`IDENTIFICATION OF CLAIMS BEING CHALLENGED (§
`42.104(B)) ....................................................................................................... 7 
`OVERVIEW OF THE 849 PATENT ............................................................. 8 
`849 PATENT PROSECUTION HISTORY ................................................. 16 
`CLAIM CONSTRUCTION ......................................................................... 17 
`6.1. Applicable Law .................................................................................. 18 
`6.2. Construction of Claim Terms ............................................................. 18 
`6.2.1. “surface reaction rate constant” (all claims) .......................... 18 
`PERSON HAVING ORDINARY SKILL IN THE ART ............................ 22 
`DESCRIPTION OF THE PRIOR ART ....................................................... 22 
`8.1. Alkire (Ex. 1005) ................................................................................ 22 
`8.2. Kao (Ex. 1006) ................................................................................... 26 
`8.3. Flamm (Ex. 1007)............................................................................... 31 
`8.4. Motivations To Combine: Alkire in Combination with Kao ............ 32 
`8.5. Motivations To Combine: Alkire in Combination with Kao and
`Flamm ................................................................................................. 34 
`GROUND #1: CLAIMS 1-29 OF THE 849 PATENT ARE
`UNPATENTABLE AS OBVIOUS OVER ALKIRE IN VIEW OF
`KAO .............................................................................................................. 36 
`
`1.
`2.
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`3.
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`4.
`5.
`6.
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`7.
`8.
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`9.
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
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`9.1. Claim 1 is obvious over Alkire in view of Kao ................................. 36 
`9.1.1. [1.P] “A device fabrication method comprising the steps
`of:” ......................................................................................... 36 
`9.1.2. [1.1] “providing a plasma etching apparatus comprising
`a substrate therein, said substrate comprising a top
`surface and a film overlying said top surface, said film
`comprising a top film surface;” ............................................. 37 
`9.1.3. [1.2] “etching said top film surface to define a relatively
`non-uniform etching profile on said film, and defining
`etch rate data comprising an etch rate and a spatial
`coordinate which defines a position within said
`relatively non-uniform etching profile on said substrate,
`said etching comprising a reaction between a gas phase
`etchant and said film; and” .................................................... 39 
`9.1.4. [1.3] “extracting a surface reaction rate constant from
`said etch rate data, and using said surface reaction rate
`constant in the fabrication of a device.” ................................ 43 
`9.2. Claim 10 is obvious over Alkire in view of Kao ............................... 48 
`9.2.1. [10.P] “A method of designing a reactor comprising the
`steps of:” ................................................................................ 48 
`9.2.2. [10.1] “providing a first plasma etching apparatus
`comprising a substrate therein, said substrate
`comprising a top surface and a film overlying said top
`surface, said film comprising a top film surface” .................. 49 
`9.2.3. [10.2] “etching said top film surface to define a
`relatively non-uniform etching profile on said film, and
`defining etch rate data comprising an etch rate and a
`spatial coordinate which defines a position within said
`relatively non-uniform etching profile on said film of
`said substrate, said etching comprising a reaction
`between a gas phase etchant and said film; and” ................... 49 
`9.2.4. [10.3] “extracting a surface reaction rate constant from
`said etch rate data, and using said surface reaction rate
`constant in designing a second plasma etching
`apparatus.”.............................................................................. 50 
`9.3. Claim 20 is obvious over Alkire in view of Kao ............................... 51 
`
`ii
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
`
`9.3.1. [20.p] “A substrate fabrication method, using a plasma
`etching apparatus, said method comprising:” ........................ 51 
`9.3.2. [20.1] “providing a substrate selected from a group
`consisting of a semiconductor wafer, a plate, and a flat
`panel display, said substrate comprising a top surface;” ....... 51 
`9.3.3. [20.2] “forming a film overlying said top surface, said
`film comprising a top film surface;” ...................................... 52 
`9.3.4. [20.3] “etching said top film surface to define a
`relatively non-uniform profile on said film, and defining
`etch rate data comprising an etch rate and a spatial
`coordinate which defines a position within said
`relatively non-uniform etching profile of said film on
`said substrate, said etching comprising a reaction
`between a gas phase etchant and said film; and” ................... 52 
`9.3.5. [20.4] “extracting a surface reaction rate constant from
`said etch rate data, and using said surface reaction rate
`constant.” ................................................................................ 53 
`9.4. Claim 22 is obvious over Alkire in view of Kao ............................... 53 
`9.4.1. [22.P] “A method of fabricating an integrated circuit
`device, using a plasma etching apparatus, said method
`comprising:” ........................................................................... 53 
`9.4.2. [22.1] “providing a uniformity value and a surface
`reaction rate constant for an etching reaction, said
`etching reaction including a substrate and etchant
`species;” ................................................................................. 54 
`9.4.3. [22.2]“defining etching parameters providing said uniformity value; and”
`9.4.4. [22.3] “adjusting at least one of said etching parameters
`using said surface reaction rate constant to produce a
`selected etching rate” ............................................................. 57 
`9.4.5. [22.4] “wherein said etching rate providing an etching
`condition for fabrication of an integrated circuit
`device.” .................................................................................. 59 
`9.5. Claim 26 is obvious over Alkire in view of Kao ............................... 60 
`9.5.1. [26.P] “A process for fabricating a device using a
`plasma etching apparatus, said device being fabricated
`
`iii
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
`
`by use of a surface reaction rate constant, said surface
`reaction rate constant being derived from a method
`comprising:” ........................................................................... 60 
`9.5.2. [26.1] “providing a plasma etching apparatus
`comprising a substrate therein, said substrate
`comprising a top surface and a film overlying said top
`surface, said film comprising a top film surface” .................. 60 
`9.5.3. [26.2] “etching said top surface at a temperature to
`define a relatively non-uniform etching profile on said
`film, and defining etch rate data comprising an etch rate
`and a spatial coordinate which defined a position from
`said relatively non-uniform etching profile on said film
`of said substrate, said etching comprising a reaction
`between a gas phase etchant and said film; and” ................... 61 
`9.5.4. [26.3] “extracting from said etching rate data a surface
`reaction rate constant for said temperature.” ......................... 61 
`9.6. Dependent Claims 2 and 11 are obvious over Alkire in view of
`Kao ..................................................................................................... 62 
`9.6.1. [2.0] “The method of claim 1 wherein said etching step
`is diffusion limited.” .............................................................. 62 
`[11.0] “The method of claim 10 wherein said etching step
`at a postion [sic] on said relatively non-uniform etching
`profile is diffusion limited.” ..................................................... 62 
`9.7. Dependent Claims 3 and 12 are obvious over Alkire in view of
`Kao ..................................................................................................... 62 
`9.7.1. [3.0] “The method of claim 1 wherein said spatial
`coordinate includes a radius and an angle.” ........................... 63 
`[12.0] “The method of claim 10 wherein said spatial
`coordinate which defines said position along said
`relatively non-uniform etching profile includes a radius
`and an angle.” ........................................................................... 63 
`9.8. Dependent Claims 4 and 13 are obvious over Alkire in view of
`Kao ..................................................................................................... 65 
`9.8.1. [4.0] “The method of claim 1 wherein said spatial
`coordinate includes an x-direction and a y-direction.” .......... 65 
`
`iv
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`[13.0] “The method of claim 10 wherein said spatial
`coordinate which defines said position within said
`relatively non-uniform etching profile includes an x-
`direction and a y-direction.” .................................................... 65 
`9.9. Dependent Claims 5 and 14 are obvious over Alkire in view of
`Kao ..................................................................................................... 66 
`9.9.1. [5.0] “The method of claim 1 wherein said extracting
`step correlates said surface reaction rate constant over a
`diffusivity with said etch rate, said etch rate being
`defined by said relatively non-uniform etching profile.” ...... 66 
`[14.0] “The method of claim 8 wherein said extracting
`step correlates said surface reaction rate constant over a
`diffusivity with said etch rate, said etch rate being
`defined by said relatively non-uniform etching profile.” ........ 66 
`9.10. Dependent Claims 6 and 15 are obvious over Alkire in view of
`Kao ..................................................................................................... 67 
`9.10.1. [6.0] “The method of claim 1 wherein said etch rate is
`defined by said relatively non-uniform etching profile at
`selected spatial coordinates over a time.” .............................. 67 
`[15.0] “The method of claim 10 wherein said etch rate is
`defined by said relatively non-uniform etching profile at
`selected spatial coordinates over a time.” ................................ 67 
`9.11. Dependent Claims 7 and 16 are obvious over Alkire in view of
`Kao ..................................................................................................... 68 
`9.11.1. [7.0] “The method of claim 1 wherein said etching is an
`ashing method.” ..................................................................... 68 
`[16.0] “The method of claim 10 wherein said etching is
`an ashing method.” ................................................................... 68 
`9.12. Dependent Claims 8 and 17 are obvious over Alkire in view of
`Kao ..................................................................................................... 69 
`9.12.1. [8.0] “The method of claim 7 wherein said ashing
`method comprises reactants including an oxygen and a
`photoresist.” ........................................................................... 69 
`
`v
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`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
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`[17.0] “The method of claim 16 wherein said ashing
`method comprises reactants including an oxygen and a
`photoresist.” ............................................................................. 69 
`9.13. Claim 9 is obvious over Alkire in view of Kao ................................. 70 
`9.13.1. [9.0] “The method of claim 1 further comprising a step
`of using said reaction rate constant in adjusting said
`plasma etch apparatus.” ......................................................... 70 
`9.14. Claim 18 is obvious over Alkire in view of Kao ............................... 71 
`9.14.1. [18.0] “The method of claim 10 wherein said second
`plasma etching apparatus is a co-axial reactor.” .................... 71 
`9.15. Claim 19 is obvious over Alkire in view of Kao ............................... 72 
`9.15.1. [19.0] “The method of claim 10 wherein said second
`plasma etching apparatus is a plasma etching
`apparatus.”.............................................................................. 72 
`9.16. Dependent Claims 21 and 28 are obvious over Alkire in view of
`Kao ..................................................................................................... 72 
`9.16.1. [21.0] “The method of claims 1, 10, or 20 wherein said
`etching is provided whereupon chemical effects are
`enhanced over ion bombardment effects.” ............................ 73 
`[28.0] “The process of claim 26 wherein said etching is
`provided whereupon chemical effects are enhanced over
`ion bombardment effects.” ....................................................... 73 
`9.17. Claim 23 is obvious over Alkire in view of Kao ............................... 74 
`9.17.1. [23.0] “The method of claim 22 wherein said etching
`parameters can be selected from a group consisting of a
`temperature, a pressure, a power, a gap, and a flow
`rate.” ....................................................................................... 74 
`9.18. Dependent Claims 24 and 25 are obvious over Alkire in view of
`Kao ..................................................................................................... 75 
`9.18.1. [24.0] “The method of claim 22 wherein said uniformity
`value ranges from 90% and greater.”..................................... 75 
`[25.0] “The method of claim 22 wherein said uniformity
`value ranges from 95% and greater.” ....................................... 75 
`9.19. Claim 27 is obvious over Alkire in view of Kao ............................... 75 
`
`vi
`
`Page 15 of 104
`
`

`

`Petition for Inter Partes Review of U.S. Patent No. 5,711,849
`
`9.19.1. [27.0] “The process of claim 26 wherein said surface
`reaction rate constant is derived using at least a
`diffusivity value that is determined by an equation.” ............ 76 
`9.20. Claim 29 is obvious over Alkire in view of Kao ............................... 76 
`9.20.1. [29.0] “The method of claim 26 further comprising
`using said surface reaction rate constant in a method
`selected from a group consisting of a fabrication of a
`device or of designing a reactor, said surface reaction
`rate constant being provided by at least a diffusivity
`value.” .................................................................................... 76 
`10. CONCLUSION .......................................................................................