throbber
Trials@uspto.gov
`571-272-7822
`
`
`
`
`
`
` Paper 39
` Entered: June 22, 2018
`
`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________
`
`MICRON TECHNOLOGY, INC.,
`INTEL CORPORATION, GLOBALFOUNDRIES U.S., INC., and
`SAMSUNG ELECTRONICS COMPANY, LTD.
`Petitioner,
`
`v.
`
`DANIEL L. FLAMM,
`Patent Owner.
`____________
`
`Case IPR2017-003911
`Patent 6,071,221
`____________
`
`
`
`Before CHRISTOPHER L. CRUMBLEY, JO-ANNE M. KOKOSKI, and
`KIMBERLY McGRAW, Administrative Patent Judges.
`
`KOKOSKI, Administrative Patent Judge.
`
`
`
`FINAL WRITTEN DECISION
`35 U.S.C. § 318(a) and 37 C.F.R. § 42.73
`
`
`1 Samsung Electronics Company, Ltd. was joined as a party to this
`proceeding via a Motion for Joinder in IPR2017-01746.
`
`

`

`IPR2017-00391
`Patent 6,071,221
`
`
`I. INTRODUCTION
`
`We have jurisdiction to conduct this inter partes review under
`
`35 U.S.C. § 6, and this Final Written Decision is issued pursuant to
`
`35 U.S.C. § 318(a) and 37 C.F.R. § 42.73. For the reasons that follow, we
`
`determine that Petitioner has shown by a preponderance of the evidence that
`
`claims 1–7 of U.S. Patent No. 6,071,221 (“the ’221 patent,” Ex. 1001) are
`
`unpatentable.
`
`A.
`
`Procedural History
`
`Micron Technology, Inc., Intel Corporation, and
`
`GLOBALFOUNDRIES U.S., Inc. (collectively, “Petitioner”)2 filed a
`
`Petition (“Pet.”) to institute an inter partes review of claims 1–7 of the ’221
`
`patent. Paper 1. Daniel L. Flamm (“Patent Owner”) filed a Preliminary
`
`Response (“Prelim. Resp.”). Paper 9. Pursuant to 35 U.S.C. § 314(a), we
`
`instituted an inter partes review on the following grounds:
`
`Reference(s)
`
`Basis
`
`Challenged Claim(s)
`
`Lieberman3
`
`Lieberman and Dible4
`
`§ 103(a)
`
`§ 103(a)
`
`1, 5–7
`
`1, 5–7
`
`
`2 On September 15, 2017, we granted the Motion for Joinder filed by
`Samsung Electronics Company, Ltd. (“Samsung”) in IPR2017-01746, and
`authorized Samsung to participate in this proceeding only on a limited basis.
`See Paper 14. We refer to Micron Technology, Inc., Intel Corporation,
`GLOBALFOUNDRIES U.S., Inc., and Samsung collectively as “Petitioner”
`throughout this Decision.
`
`3 Design of High-Density Plasma Sources for Materials Processing, Plasma
`Sources for Thin Film Deposition and Etching (Physics of Thin Films Vol.
`18, pp. 1–119), August 18, 1994 (Ex. 1006).
`
`4 US 5,573,595, issued Nov. 12, 1996 (Ex. 1007).
`
`
`
`
`2
`
`

`

`IPR2017-00391
`Patent 6,071,221
`
`
`Reference(s)
`
`Basis
`
`Challenged Claim(s)
`
`Lieberman and Hanawa5
`
`§ 103(a)
`
`Lieberman, Dible, and
`Hanawa
`Lieberman and Collins6
`
`Lieberman, Dible and
`Collins
`Qian7
`
`Qian and Hanawa
`
`Qian and Collins
`
`§ 103(a)
`
`§ 103(a)
`
`§ 103(a)
`
`2, 3
`
`2, 3
`
`4
`
`4
`
`§ 103(a)
`
`1, 5–7
`
`§ 103(a)
`
`§ 103(a)
`
`2, 3
`
`4
`
`
`Paper 10 (“Dec. on Inst.”), 29.
`
`After institution of trial, Patent Owner filed a Corrected Patent Owner
`
`Response (Paper 34, “PO Resp.”), and Petitioner filed a Reply (Paper 15,
`
`“Reply”). Petitioner relies on the Declaration of David B. Graves (“the
`
`Graves Declaration,” Ex. 1003) and the Reply Declaration of Dr. David
`
`Graves (“the Graves Reply Declaration,” Ex. 1034). Patent Owner relies on
`
`the Declaration of Daniel L. Flamm, Sc.D. (“the Flamm Declaration,”
`
`Ex. 2001) and the Second Declaration of Daniel L. Flamm (“the Second
`
`Flamm Declaration,” Ex. 2003). An oral hearing was held on March 7,
`
`2018. A transcript of the hearing is included in the record. Paper 37.
`
`B.
`
`Related Proceedings
`
`Petitioner indicates that the ’221 patent is “at issue in five related
`
`patent infringement actions, in which [Patent Owner] sued Petitioners and
`
`other defendants, in the Northern District of California, Case Nos. 5:16-cv-
`
`
`5 US 5,688,357, issued Nov. 18, 1997 (Ex.1010).
`6 US 5,065,118, issued Nov. 12, 1991 (Ex. 1008).
`7 US 5,683,539, issued Nov. 4, 1997 (Ex. 1009).
`
`3
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`
`

`

`IPR2017-00391
`Patent 6,071,221
`
`01578-BLF; 5:16-cv-01579-BLF; 5:16-cv-01580-BLF; 5:16-cv-01581-BLF;
`
`5:16-cv-02252-BLF.” Pet. 3; see Paper 7, 2. The ’221 patent previously
`
`was the subject of IPR2015-01767 (terminated on December 15, 2016 at the
`
`joint request of the parties before a Final Written Decision was entered).
`
`Lam Research Corp. v. Daniel L. Flamm, Case IPR2015-01767, slip. op. at
`
`3–6 (PTAB Dec. 15, 2016) (Paper 36).
`
`C.
`
`The ’221 Patent
`
`The ’221 patent, titled “Process Depending on Plasma Discharges
`
`Sustained by Inductive Coupling,” is directed to a process for fabricating a
`
`product using plasma discharge. Ex. 1001, 6:14–16. The process “relies
`
`upon the control of the instantaneous plasma AC potential to selectively
`
`control a variety of plasma characteristics,” such as “the amount of neutral
`
`species, the amount of charged species, overall plasma potential, the spatial
`
`extent and distribution of plasma density, the distribution of electrical
`
`current, and others.” Id. at 6:16–22. The process “can be used in
`
`applications including chemical dry etching (e.g., stripping), ion-enhanced
`
`etching, plasma immersion ion implantation, chemical vapor deposition and
`
`material growth, and others.” Id. at 6:22–26.
`
`The process comprises subjecting a substrate to a composition of
`
`entities, where “[a]t least one of the entities emanates from a species
`
`generated by a gaseous discharge excited by a high frequency field in which
`
`the vector sum of phase and anti-phase capacitive coupled voltages (e.g., AC
`
`plasma voltage) from the inductive coupling structure substantially
`
`balances.” Id. at 6:31–37. According to the ’221 patent, “[t]his process
`
`provides for a technique that is substantially free from stray or parasitic
`
`
`
`
`4
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`

`IPR2017-00391
`Patent 6,071,221
`
`capacitive coupling from the plasma source to chamber bodies (e.g.,
`
`substrate, walls, etc.) at or near ground potential.” Id. at 6:37–41.
`
`The ’221 patent also describes a plasma discharge apparatus that
`
`includes a plasma source and a plasma applicator. Id. at 7:26–28. “A wave
`
`adjustment circuit (e.g., RLC circuit, coil, transmission line, etc.) is operably
`
`coupled to the plasma applicator” and “can selectively adjust phase and anti-
`
`phase potentials of the plasma from an rf power supply.” Id. at 7:30–34.
`
`Figure 2A of the ’221 patent is reproduced below.
`
`
`
`Figure 2A is a simplified configuration using wave adjustment circuits. Id.
`
`at 7:46–47. Embodiment 50 includes discharge tube 52, inductive applicator
`
`55, exterior shield 54, upper wave adjustment circuit 57, lower wave
`
`adjustment circuit 59, plasma source region 60, and RF power supply 61. Id.
`
`at 10:3–8. “In this embodiment, the wave adjustment circuits are adjusted to
`
`provide substantially zero AC voltage at one point on the inductive coil
`
`(refer to point 00 in FIG. 2A),” providing “substantially equal phase 70 and
`
`
`
`
`5
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`

`

`IPR2017-00391
`Patent 6,071,221
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`anti-phase 71 voltage distributions in directions about this point (refer to 00-
`
`A and 00-C in FIG. 2A)” and “substantially equal capacitance coupling to
`
`the plasma from physical inductor elements (00-C) and (00-A), carrying the
`
`phase and anti-phase potentials.” Id. at 10:14–22. According to the ’221
`
`patent, “[s]ince the capacitive current increases monotonically with the
`
`magnitude of the difference of peak phase and anti-phase voltages, which
`
`occur at points A and C in FIG. 2A, this coupling can be lessened by
`
`reducing this voltage difference,” which is achieved by way of wave
`
`adjustment circuits 57 and 59. Id. at 10:31–37.
`
`Claim 1 is the only independent claim, and is reproduced below.
`
`1.
`A process for fabricating a product using a plasma
`source, said process comprising the steps of subjecting a
`substrate to entities, at least one of said entities emanating from
`a gaseous discharge excited by a high frequency field from an
`inductive coupling structure in which a phase portion and an anti-
`phase portion of capacitive currents coupled from the inductive
`coupling structure are selectively balanced;
`
`wherein said inductive coupling structure is adjusted using a
`wave adjustment circuit, said wave adjustment circuit
`adjusting the phase portion and the anti-phase portion of
`the capacitively coupled currents.
`
`Ex. 1001, 22:58–23:2. Claims 2–7 depend, directly or indirectly,
`
`from claim 1, and include additional limitations directed to the
`
`function of the wave adjustment circuit, and the identity and location
`
`of the processing, among others.
`
`A.
`
`Level of Ordinary Skill in the Art
`
`II. ANALYSIS
`
`Petitioner argues that a person of ordinary skill in the art at the time of
`
`the ’221 patent would have had “a Bachelor’s degree in electrical,
`
`
`
`
`6
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`IPR2017-00391
`Patent 6,071,221
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`mechanical, or chemical engineering, physics, chemistry, or a similar field,
`
`and three to four years of work experience in semiconductor manufacturing
`
`or related fields,” a Master’s degree in the same fields “and two to three
`
`years of work experience in semiconductor manufacturing or related fields,”
`
`or “a PhD in electrical, mechanical, or chemical engineering, physics,
`
`chemistry, or a similar field.” Pet. 16 (citing Ex. 1003 ¶¶ 48–51). Patent
`
`Owner does not dispute Petitioner’s assessment in its Response.
`
`Petitioner’s assessment appears consistent with the level of ordinary
`
`skill in the art at the time of the invention as reflected in the prior art in this
`
`proceeding. See Okajima v. Bourdeau, 261 F.3d 1350, 1355 (Fed. Cir.
`
`2001) (explaining that specific findings regarding ordinary skill level are not
`
`required “where the prior art itself reflects an appropriate level and a need
`
`for testimony is not shown” (quoting Litton Indus. Prods., Inc. v. Solid State
`
`Sys. Corp., 755 F.2d 158, 163 (Fed. Cir. 1985))). Accordingly, we adopt
`
`Petitioner’s assessment of the level of ordinary skill in the art.
`
`B.
`
`Claim Interpretation
`
`The ’221 patent has expired. Ex. 1001 at [22] (application filed on
`
`May 30, 1997); see Pet. 16. For claims of an expired patent, the Board’s
`
`claim interpretation is similar to that of a district court, i.e., consistent with
`
`Phillips v. AWH Corp., 415 F.3d 1303 (Fed. Cir. 2005) (en banc). See In re
`
`Rambus, Inc., 694 F.3d 42, 46 (Fed. Cir. 2012). Under the Phillips standard,
`
`claim terms are given their ordinary and customary meaning as would be
`
`understood by a person of ordinary skill in the art at the time of the
`
`invention, and in the context of the entire patent disclosure and prosecution
`
`history. Phillips, 415 F.3d at 1312–14. Only those terms in controversy
`
`need to be construed, and only to the extent necessary to resolve the
`
`
`
`
`7
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`

`

`IPR2017-00391
`Patent 6,071,221
`
`controversy. See Nidec Motor Corp. v. Zhongshan Broad Ocean Motor Co.,
`
`868 F.3d 1013, 1017 (Fed. Cir. 2017) (“we need only construe terms ‘that
`
`are in controversy, and only to the extent necessary to resolve the
`
`controversy’”) (quoting Vivid Techs., Inc. v. Am. Sci. & Eng’g, Inc., 200
`
`F.3d 795, 803 (Fed. Cir. 1999)).
`
`For purposes of the Decision on Institution, we determined that, based
`
`on the record at the time, no claim term required express construction (Dec.
`
`on Inst. 6–7), and we see no reason to modify that determination in light of
`
`the record developed at trial.
`
`C.
`
`Principles of Law
`
`To prevail on its challenges to the patentability of the claims, a
`
`petitioner must establish facts supporting its challenge by a preponderance
`
`of the evidence. 35 U.S.C. § 316(e); 37 C.F.R. § 42.1(d). “In an [inter
`
`partes review], the petitioner has the burden from the onset to show with
`
`particularity why the patent it challenges is unpatentable.” Harmonic Inc. v.
`
`Avid Tech., Inc., 815 F.3d 1356, 1363 (Fed Cir. 2016) (citing 35 U.S.C.
`
`§ 312(a)(3) (requiring inter partes review petitions to identify “with
`
`particularity . . . the evidence that supports the grounds for the challenge to
`
`each claim”)). This burden of persuasion never shifts to the patent owner.
`
`See Dynamic Drinkware, LLC v. Nat’l Graphics, Inc., 800 F.3d 1375, 1378–
`
`79 (Fed. Cir. 2015) (discussing the burdens of persuasion and production in
`
`inter partes review).
`
`A claim is unpatentable under 35 U.S.C. § 103 if the differences
`
`between the subject matter sought to be patented and the prior art are such
`
`that the subject matter as a whole would have been obvious to a person
`
`having ordinary skill in the art to which the subject matter pertains. KSR
`
`
`
`
`8
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`

`

`IPR2017-00391
`Patent 6,071,221
`
`Int’l Co. v. Teleflex, Inc., 550 U.S. 398, 406 (2007). The question of
`
`obviousness is resolved on the basis of underlying factual determinations,
`
`including (1) the scope and content of the prior art; (2) any differences
`
`between the claimed subject matter and the prior art; (3) the level of ordinary
`
`skill in the art; and (4) objective evidence of nonobviousness. See Graham
`
`v. John Deere Co., 383 U.S. 1, 17–18 (1966).
`
`A patent claim “is not proved obvious merely by demonstrating that
`
`each of its elements was, independently, known in the prior art.” KSR, 550
`
`U.S. at 418. An obviousness determination requires finding “both ‘that a
`
`skilled artisan would have been motivated to combine the teachings of the
`
`prior art references to achieve the claimed invention, and that the skilled
`
`artisan would have had a reasonable expectation of success in doing so.’”
`
`Intelligent Bio-Sys., Inc. v. Illumina Cambridge Ltd., 821 F.3d 1359, 1367–
`
`68 (Fed. Cir. 2016) (citation omitted); see KSR, 550 U.S. at 418 (for an
`
`obviousness analysis, “it can be important to identify a reason that would
`
`have prompted a person of ordinary skill in the relevant field to combine the
`
`elements in the way the claimed new invention does”).
`
`D. Overview of the Prior Art
`
`1.
`
`Overview of Lieberman
`
`Lieberman is a review article directed to plasma generation schemes,
`
`the purpose of which “is to (1) develop a unified framework from which all
`
`‘high-efficiency’ sources may be viewed and compared; (2) outline key
`
`elements of source design that affect processing results; and (3) highlight
`
`areas where additional research and development is needed.” Ex. 1006, 6.8
`
`
`8 The cited page numbers in Ex. 1006 refer to the numbers added by
`Petitioner in the bottom right corner of the page.
`
`
`
`
`9
`
`

`

`IPR2017-00391
`Patent 6,071,221
`
`According to Lieberman, “[t]he advent of sub-micron electronic device
`
`fabrication has brought unprecedented demands for process optimization and
`
`control which, in turn, have led to improved plasma reactors for the etching
`
`and deposition of thin films.” Id. at 5 (internal citations omitted).
`
`Lieberman describes two inductive source configurations, one using a
`
`cylindrical coil, the other a planar coil, for a low profile source. Id. at 55.
`
`“The planar coil is a flat helix wound from near the axis to near the outer
`
`radius of the source chamber (‘electric stovetop’ coil shape),” and can be
`
`united with a cylindrical coil “to give ‘cylindrical cap’ or ‘hemispherical’
`
`coil shapes.” Id. Lieberman states that “inductive coils can be driven by a
`
`13.56 MHz, 50 ohm rf supply through an L matching network,” and that
`
`“[t]he coil can be driven push-pull using a balanced transformer, which
`
`places a virtual ground in the middle of the coil and reduces the maximum
`
`coil-to-plasma voltage by a factor of two.” Id. at 55–56. Lieberman
`
`explains that “[t]his reduces the undesired capacitively coupled rf current
`
`flowing from coil to plasma by a factor of two.” Id. at 56.
`
`Lieberman also teaches that “[p]lasma in an inductive source is
`
`created by application of rf power to a non-resonant, inductive coil, resulting
`
`in the breakdown of the process gas within or near the coil by the induced rf
`
`electric field,” and “[t]he plasma created in the source region streams toward
`
`a wafer holder that can be independently biased by application of rf power
`
`using a separate generator.” Id. at 56–57.
`
`2.
`
`Overview of Dible
`
`Dible is directed to methods and apparatus for inducing plasma in low
`
`pressure plasma systems that are typically used in semiconductor
`
`fabrication. Ex. 1007, 1:7–9. In particular, Dible “relates to methods and
`
`
`
`
`10
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`

`

`IPR2017-00391
`Patent 6,071,221
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`apparatus for variable control of the plasma generating element to achieve
`
`combinations of inductive and/or capacitive coupling.” Id. at 1:9–12.
`
`The Dible device includes “a first radio frequency excitation source
`
`for outputting a first excitation current having a first phase and a first
`
`amplitude” and “a second radio frequency excitation source for outputting a
`
`second excitation current having a second phase and a second amplitude”
`
`along with “a plasma generating element having a first end and a second end
`
`for receiving respectively the first excitation current and the second
`
`excitation current.” Id. at 2:30–37. The Dible device also “includes a
`
`control circuit having a control input for receiving a user-variable signal
`
`indicative of a desired phase difference between the first phase and the
`
`second phase.” Id. at 2:38–41. The control circuit, in response to the
`
`control input, outputs a control signal to one of the first or second radio
`
`frequency excitation sources, effectuating a phase difference between the
`
`first and second phases that substantially approximates the desired phase
`
`difference. Id. at 2:41–48.
`
`The Dible device “becomes essentially an inductive coupling device
`
`when the first phase and the second phase are opposite in phase,” and
`
`“becomes essentially a capacitive coupling device” when the first and
`
`second phases are in phase. Id. at 2:48–52. When the first phase and second
`
`phase differ by an angle between in phase and opposite in phase, the Dible
`
`device “becomes a combination inductive and capacitive coupling device.”
`
`Id. at 2:52–55.
`
`3.
`
`Overview of Hanawa
`
`Hanawa is directed to “inductively coupled RF plasma reactors used
`
`in semiconductor processing” that employ “a coiled antenna to couple RF
`
`
`
`
`11
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`

`IPR2017-00391
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`power to the plasma reactor chamber, and in particular to methods for tuning
`
`the RF power circuit (including the coil antenna) in response to impedance
`
`changes in the plasma.” Ex. 1010, 1:8–13. Hanawa teaches a control circuit
`
`that is “connected to a control input of the variable frequency RF power
`
`source and responsive to the power sensor for changing the frequency of the
`
`variable frequency RF power source so as to either increase the transmitted
`
`power or decrease the reflected power,” in order “to provide an accurate RF
`
`match instantly responsive to changes in plasma impedance.” Id. at 2:3–9.
`
`Hanawa further teaches that the described control circuit “eliminates not
`
`only the need for variable capacitors and electric motor servos in the RF
`
`match circuit, but also eliminates the entire RF match circuit itself,
`
`exploiting the coil antenna 24 to obtain the needed reactance for an RF
`
`match between the chamber 10 and the RF source 26.” Id. at 4:20–25.
`
`Hanawa Figure 1 is reproduced below.
`
`Figure 1 is a schematic diagram of an RF plasma reactor system including
`
`Hanawa’s control circuit. Id. at 2:13–14. Inductively coupled RF plasma
`
`
`
`
`
`
`12
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`

`

`IPR2017-00391
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`reactor 10 includes chamber 12 bounded by side wall 14 and ceiling 16. Id.
`
`at 2:37–40. Wafer pedestal 18 supports semiconductor wafer 20 on isolated
`
`conductive top 22. Id. at 2:43–44. RF power is coupled to the plasma in
`
`chamber 12 by coiled antenna 24 wound around the exterior of ceiling 16.
`
`Id. at 2:45–47. Coiled antenna 24 is connected to matched RF source 26 via
`
`cable 28. Id. at 2:47–48. Conductive top 22 is connected through RF match
`
`circuit 30 and cable 32 to RF generator 34 and amplifier 36. Id. at 2:48–51.
`
`In order to compensate for plasma impedance fluctuations after a
`
`plasma is ignited in chamber 12, RF source 26 employs conventional
`
`variable-frequency RF generator 52 having frequency control input 54 and
`
`power output 56 with amplifier 57 and computer 58. Id. at 3:24–31.
`
`Computer 58 monitors the reflected power level measured by reflected
`
`power sensor 50 and applies a control signal to frequency control input 54 of
`
`RF generator 52. Id. at 3:31–34. Computer 58 is programmed to vary the
`
`frequency of RF generator 52 so as to continuously minimize the amount of
`
`reflected power measured by reflected power sensor 50. Id. at 3:43–47.
`
`4.
`
`Overview of Collins
`
`Collins is directed to the connection of a first electrical circuit (the
`
`source) to a second electrical circuit (the load) using a matching network in
`
`order to provide maximum power transfer between the source and the load.
`
`Ex. 1008, 1:6–10. Collins teaches a matching network that matches an
`
`output impedance of a source with an input impedance of a load, wherein the
`
`matching network includes a plurality of transmission line stubs. Id. at
`
`2:40–44. Collins states that “[e]ach transmission line stub includes a first
`
`transmission line conductor, a second transmission line conductor running
`
`parallel to but not in electrical contact with the first transmission line
`
`
`
`
`13
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`

`IPR2017-00391
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`conductor, and ferrite dielectric material between the first transmission line
`
`conductor and the second transmission line conductor.” Id. at 2:45–50.
`
`Collins Figure 1 is reproduced below.
`
`
`
`Figure 1 “shows an electronically tuned VHF/UHF matching network in
`
`accordance with the preferred embodiment” described in Collins. Id. at
`
`3:23–25. Source 21 is connected to load 22 through an electronically tuned
`
`VHF/UHF matching network consisting of transmission line stubs 45 and
`
`46. Id. at 3:44–49. Transmission line stub 45 consists of transmission line
`
`conductor 30 separated by a ferrite dielectric material. Id. at 3:59–62. A
`
`magnetic field is applied to transmission line stub 45 by a current generated
`
`by DC power supply 44 through wire 41, which is wrapped around
`
`transmission line stub 45. Id. at 3:62–65. Collins teaches that “[v]arying the
`
`current through wire 41, and thus the magnetic field applied to transmission
`
`line stub 45, varies the relative permeability of transmission line stub 45.”
`
`Id. at 3:65–68. Collins also describes an embodiment where “a matching
`
`
`
`
`14
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`

`IPR2017-00391
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`network of the type shown in FIG. 1” is “applied to a system which is used
`
`in a plasma process inside a plasma chamber 2.” Id. at 4:35–37.
`
`5.
`
`Overview of Qian
`
`Qian is directed to “improvements in inductively coupled radio
`
`frequency (RF) plasma reactors for reducing capacitive coupling from the
`
`coil antenna to the semiconductor wafer.” Ex. 1009, 1:9–12. Qian teaches
`
`that such capacitive coupling “is reduced by isolating the coil antenna from
`
`the RF power source by an isolation transformer, so that the coil antenna has
`
`a floating potential.” Id. at 1:49–51. According to Qian, this “reduction in
`
`capacitive coupling has been quantitatively measured to be more than a
`
`factor of two, a significant advantage.” Id. at 1:55–57.
`
`Qian Figures 1 and 2 are reproduced below.
`
`
`
`Figure 1 is a schematic diagram illustrating a plasma reactor embodying the
`
`Qian invention, and Figure 2 is a schematic diagram of a preferred
`
`embodiment of the isolation transformer described by Qian. Id. at 1:60–64.
`
`The inductively coupled RF plasma reactor shown in Figure 1 includes
`
`grounded reactor chamber 10 having grounded side wall 12 and ceiling 14
`
`
`
`
`15
`
`

`

`IPR2017-00391
`Patent 6,071,221
`
`that encloses wafer pedestal 20. Id. at 2:8–11. Wafer pedestal 20 supports
`
`semiconductor wafer 30. Id. at 2:11. Processing gas is introduced into
`
`chamber 10 via gas inlet 40, and the gas ionizes to produce a plasma over
`
`wafer 30 by RF power inductively coupled to the plasma from inductive coil
`
`antenna 50 wound over ceiling 14 of chamber 10. Id. at 2:12–16. Coil
`
`antenna 50 is coupled to RF generator 60 through RF impedance match
`
`network 70. Id. at 2:16–17.
`
`Isolation transformer 80 is interposed between match network 70 and
`
`inductive coil 50 in order to isolate inductive coil antenna 50 from RF power
`
`generator 60. Id. at 2:21–24. Isolation transformer 80 (also shown in Figure
`
`2) has primary winding 82 and secondary winding 84; match network 70 and
`
`RF generator 60 are connected across primary winding 82, and inductive
`
`coil antenna 50 is connected across secondary winding 84. Id. at 2:24–29.
`
`Qian teaches that “isolation transformer 80 reduces or virtually eliminates
`
`any D.C. potential between” generator 60 and inductive coil antenna 50, so
`
`that the electric potential of inductive coil antenna 50 is floating with respect
`
`to wafer pedestal 20. Id. at 2:30–34. Qian states that “[t]he advantage is
`
`that capacitive coupling between” inductive coil antenna 50 and “pedestal
`
`20/wafer 30 is reduced as well,” and, therefore, inductive coil antenna 50
`
`“has less effect upon plasma ion energy at the wafer surface, namely less
`
`broadening of the plasma ion energy distribution.” Id. at 2:34–38. Qian
`
`further teaches that isolation transformer 80 may include ferrite core 90
`
`around which primary and secondary windings 82, 84 are wound. Id. at
`
`2:44–46.
`
`
`
`
`16
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`

`IPR2017-00391
`Patent 6,071,221
`
`E. Obviousness over Lieberman
`
`Petitioner contends that the subject matter of claims 1 and 5–7 is
`
`unpatentable under 35 U.S.C. § 103(a) as having been obvious over
`
`Lieberman. Pet. 27–40; Reply 4–11, 15–18. Petitioner relies on the Graves
`
`Declaration and the Graves Reply Declaration in support of its contentions.
`
`Id. Patent Owner disagrees with Petitioner’s assertions, and relies on the
`
`Flamm Declaration and the Second Flamm Declaration. PO Resp. 3–19,
`
`26–27.
`
`The parties focus their arguments on two elements in independent
`
`claim 1: (1) “a phase portion and an anti-phase portion of capacitive currents
`
`coupled from the inductive coupling structure are selectively balanced”; and
`
`(2) “wherein said inductive coupling structure is adjusted using a wave
`
`adjustment circuit, said wave adjustment circuit adjusting the phase portion
`
`and the anti-phase portion of the capacitively coupled currents.” As to the
`
`other elements of claims 1 and 5–7, we have reviewed the entirety of the
`
`evidence and arguments presented in the Petition and find that Petitioner has
`
`shown sufficiently that those elements are disclosed as arranged in the
`
`claims. Pet. 27–40. We, therefore, adopt Petitioner’s analysis as to those
`
`elements, and address the arguments regarding the disputed claim elements
`
`in turn.
`
`1.
`
`a phase portion and an anti-phase portion of capacitive
`currents coupled from the inducting coupling structure are
`selectively balanced
`
`Petitioner contends, with supporting testimony from Dr. Graves, that
`
`Lieberman discloses this element of claim 1 because it “discloses choosing
`
`to drive an inductive coil push-pull via a balanced transformer (i.e., a wave
`
`adjustment circuit), which creates a phase configuration that makes the
`
`
`
`
`17
`
`

`

`IPR2017-00391
`Patent 6,071,221
`
`phase and anti-phase portions selectively balanced (i.e., substantially equally
`
`distributed.)” Pet. 30. Petitioner contends that a person having ordinary
`
`skill in the art “would have understood Lieberman’s choice to drive the
`
`inductive coil ‘push-pull’ to correspond to the claimed ‘a phase and an anti-
`
`phase portion of capacitive currents . . . are selectively balanced’” because
`
`“the phase voltages ‘push’ capacitively coupled current into the plasma
`
`while the anti-phase voltages ‘pull’ capacitively coupled current out of the
`
`plasma.” Id. (citing Ex. 1003 ¶ 90). According to Petitioner, “[d]riving the
`
`coil push-pull with” Lieberman’s “wave adjustment circuit (the inductively-
`
`coupled push-pull arrangement, e.g., a toroidal balun) causes a midpoint on
`
`the coil to be effectively RF grounded, adjusting the phase portion and the
`
`anti-phase portion of the capacitively coupled currents so that they are
`
`selectively balanced about the midpoint.” Id. at 32–33 (citing Ex. 1003
`
`¶¶ 91–94, 100–102); see also Reply 4 (arguing that Lieberman teaches “that
`
`its balanced transformer drives the current on the inductive coil in a push-
`
`pull arrangement, such that a virtual ground is placed in the middle of the
`
`coil”).
`
`Patent Owner argues that “Lieberman does not teach balancing any
`
`currents, where there are capacitively coupled and/or phase and anti-phase
`
`portions as claimed,” and “does not disclose or distinguish phase and anti-
`
`phase capacitively coupled currents as claimed.” PO Resp. 9 (citing
`
`Ex. 2001 ¶ 16). Patent Owner states that Lieberman “makes it very clear
`
`that the ‘balanced transformer’ means an isolation transformer that isolates
`
`the output side from ground. . . .” Id. at 3 (citing Ex. 2003 ¶ 9). Patent
`
`Owner also argues that “Lieberman apparently teaches that the midpoint of
`
`the coil is at ground potential (‘ . . . places a virtual ground in the middle of
`
`
`
`
`18
`
`

`

`IPR2017-00391
`Patent 6,071,221
`
`the coil’)” and “contends that the coil to plasma voltage is supposed to be
`
`half of the total voltage applied across the coil by the transformer,” but “the
`
`center of a coil connected in this manner is [not] necessarily at ground
`
`potential.” Id. at 5 (quoting Ex. 1006, 56).
`
`Patent Owner further argues that Lieberman’s capacitive currents “are
`
`not the same thing as the capacitive currents referenced in the ’221 patent,”
`
`because “[t]he ‘capacitive current’ Lieberman refers to is only the magnitude
`
`of that portion of capacitive current which flows from the coil to the plasma
`
`and returns to the coil.” PO Resp. 4 (citing Ex. 2003 ¶ 11). Patent Owner
`
`argues that “claim 1 concerns selectively balancing the vector sum of phase
`
`and anti-phase currents flowing from the coil as a whole to the plasma—to
`
`obtain a selected difference current, if any, flowing through the plasma to
`
`grounded chamber bodies, the wafer chuck, etc.” Id. at 5–6 (citing Ex. 2003
`
`¶ 12). According to Patent Owner, “[t]he magnitude of current flowing from
`
`and returning to an isolated coil from the plasma and the vector sum of
`
`differently phased currents flowing to chamber bodies are quite different
`
`things,” and “[t]he magnitude of the current taught by Lieberman is not
`
`susceptible to selective balancing.” Id. at 6 (citing Ex. 2003 ¶ 12).
`
`Petitioner replies that Patent Owner’s “arguments rest on
`
`mischaracterizations of the 221 Patent, the prior art, and [Patent Owner’s]
`
`own exhibits.” Reply 1. Petitioner also asserts that the Second Flamm
`
`Declaration “simply parrots [Patent Owner’s] attorney argument” and “does
`
`not provide any explanation or elaboration on anything” in the Patent Owner
`
`Response, and, therefore, “should be given no weight.” Id. at 1-2.
`
`Based on our review of the record, we find Petitioner’s argument that
`
`Lieberman discloses “a phase portion and an anti-phase portion of capacitive
`
`
`
`
`19
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`

`

`IPR2017-00391
`Patent 6,071,221
`
`currents coupled from the inductive coupling structure are selectively
`
`balanced” as required by claim 1 to be persuasive. Pet. 30–36; Reply 4–11.
`
`Lieberman teaches driving an inductive coil push-pull using a balanced
`
`transformer. Ex. 1006, 56. Petitioner explains that a person having ordinary
`
`skill in the art “would have understood that choosing to drive the inductive
`
`coil ‘push-pull’ using a ‘balanced transformer’ meant choosing to set the
`
`ends of Lieberman’s inductive coil at equal and opposite voltages.” Pet. 33
`
`(citing Ex. 1003 ¶¶ 93, 102). In that regard, Dr. Graves testifies that “the
`
`output of the Lieberman transformer produces a balanced signal with the
`
`phases of the signals applied to each end of the coil having a phase
`
`difference of 180º,” and, therefore, Lieberman’s push-pull arrangement
`
`“corresponds to the claimed ‘phase and an anti-phase portion of the
`
`capacitively coupled currents.’” Ex. 1003 ¶ 90 (citing Ex. 1022, 3;
`
`Ex. 1023, 1). We further credit Dr. Graves’s testimony that
`
`Lieberman’s disclosure of a choosing to drive the coil push-pull
`with a balanced transformer mirrors the disc

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