`Bibliographic data: JPH0521362 (A) ― 19930129
`
`FORMING METHOD FOR CVD FILM
`
`Inventor(s):
`
`MATSUKI TOMOYOSHI + (MATSUKI TOMOYOSHI)
`
`Applicant(s): MITSUBISHI ELECTRIC CORP + (MITSUBISHI ELECTRIC CORP)
`Classification: international:C23C16/50; H01L21/205; H01L21/31; (IPC1
`7): C23C16/50; H01L21/205; H01L21/31
` cooperative:
`JP19910175685 19910717
`
`Global Dossier
`
`Application
`number:
`
`Priority
`number(s):
`
`JP19910175685 19910717
`
`Abstract of JPH0521362 (A)
`
`PURPOSE:To form a CVD film of desired
`quality with constant thickness even if an
`insulating film is deposited on a rear
`surface of a silicon wafer by switching a
`frequency of a high frequency signal
`among a plurality of stages to be
`controlled when the signal is applied to a
`plasma CVD device to form the CVD film.
`CONSTITUTION:When an insulating film
`3 is deposited on a rear surface of a
`silicon wafer 2, an impedance of a holder
`depends upon a capacity of the insulating
`film and a frequency of an RF wave. A
`CVD film formed on the wafer 2 is
`necessarily a film having high quality and
`high denseness on a part in contact with
`the wafer 2, but a part which is not in
`contact with the wafer is not important
`and may hence be of low quality. The
`frequency of the RF wave is set to
`450kHz for a relatively short time, and a
`CVD film 6 is formed thinly. Then, the
`frequency is switched, set to 1MHz for a
`relatively long time, and a CVD film 7 is
`
`Page 1 of 2
`
`Samsung Exhibit 1031
`
`
`
`formed thickly on the film 6. Thus, the film 6 becomes a high quality and dense, and the
`film 7 becomes a low quality and porous.
`
`Page 2 of 2
`
`