`
`
`
`Si02, BPSG, PSG
`
`CONCEPT ONE
`
`FIRST IN PRODUCTIVITY
`
`CVD SYSTEM
`
`
`PROCESS SPECIFICATIONS
`
`NOVELLUS
`
`SAMSUNG EXHIBIT 1039
`1 of 36
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`LAM 00001
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`Page 1 of 36
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`Siflz, BPSG, PSG
`
`O INTRODUCTION
`
`0 PROCESS FLEXIBILITY
`
`0* NICH PRODUCTIVITY]
`WIDE PROCESS WINDOWS]
`FILM DUALITY
`
`The Concept One is a plasma enhanced chemical vapor deposition (PECVD) system used for
`the deposition ofthin films for interlayer dielectric and passivation applications. It is designed
`and manufactured for improved reliability and deposits high quality films while lowering
`wafer cost.
`
`The system is capable of depositing all dielectric films in the same process chamber, includ~
`ing silicon nitride and doped and undoped silane and TEOS oxides. The Concept One accom-
`modates 100, 125 and 150 mm wafers; the Concept One - 200 handles 125, 150 and 200 mm.
`Wafer size can be changed in either system without modification of the process chamber and
`with minimal modification of the loadlock.
`
`
`
`Novellus’ multi-station continuous processing design provides inherently high throughput
`without the necessity of maximizing deposition rates. The resulting wide process windows
`produce consistent film.properties over wide parametric ranges. In addition, multiple deposi-
`tion stations improve uniformity by averaging out random variations at each station. The
`system’s simple overall design means higher availability and improved productivity.
`
`
`
`O PARTICLE CONTROL
`
`0 REDUCED HILLOCKS
`
`O DOPANT CONTROL
`
`The Concept One . 200 depicted above has five deposition stations and one load/Unload station in the
`process chamber. The Concept One has seven deposition stations and one load/unload station.Thc load-
`lock accommodales three cassettes except for 200 mm wafers where two cassettes are used.
`
`Low particle levels are maintained by deposition in a stable, load locked process chamber
`which is neither pressure nor temperature cycled and is automatically plasma cleaned
`after each batch of wafers. The process chamber has just one moving part that contacts the
`wafer backside only. As a result, improved device yields in a number of different applications
`havebeen‘attained.
`
`l—lillocks are a major concern in intermetal dielectric applications, leading to metal-to-metal
`shuns and lower yields. The Concept One’s unique system design eliminates these defects by
`greatly reducing the time at temperature prior to dcpmition. This means higher yields and
`lower 10 costs.
`
`Independent and linear control of dopant concentrations is achieved as a result of excess
`atomic oxygen with respect to reactant hydrides.
`
`SAMSUNG EXHIBIT 1039
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`LAM 00002
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`Page 2 of 36
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`SAMSUNG EXHIBIT 1039
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`
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`SiOz, BPSG, PSG
`GUARANTEED SPECIFICATIONS
`
`TYPICAL PROCESS PARAMETERS
`
`Film Thickness Range
`Within-Wafer
`
`Thickness Uniformity
`Wafer-to—Wafer
`
`2,000 — 20,000A
`
`Chemistry
`
`100. 125, 150 mm S 1.0% (1 0‘)
`200 mm
`51.5%(16)
`
`5,500 A/min
`
`Novellus guarantees that films will meet the listed specifica-
`tions when deposited using standard Novellus process condi—
`tions and measured according to Novellus recommended proce-
`dures. The above guaranteed specifications apply to 100, 125,
`150 and 200 mm wafers, except where noted.
`
`Thickness Reproducibility
`Run—to-Run
`
`Thickness Reproducibility
`Refractive Index
`
`s 1.0% (1c)
`
`S 1.5% (l 0')
`1.465 i0.015
`
`Film Stress
`
`Undoped
`
`Doped
`
`Dopant Range
`
`Dopant Uniformity
`
`Dopant Reproducibility
`Pinholes
`
`Particles (1000 A film)
`
`Note:
`
`S 1.5 x 109 dynesilcm2
`
`I
`Compressive
`Dopant concentration dependent
`PSG:
`0—10 wt%
`BPSG: 06 wt% B
`0-7 wt% P
`
`i 0.1 wt%
`
`i‘ 0.2 wt%
`
`S Oi01/cm2
`
`s 0.2/cm2
`(Particles 2 0.311111)
`
`Pressure
`
`Temperature
`
`RF Power
`
`RF Frequency
`
`Deposition Rate
`Undoped
`Doped
`
`SIH4, N20, N2, B2H6
`PH3 (5% in N2).
`2.2 Torr
`
`in N2).
`
`400° C
`
`0.4 Watt/cm2
`
`13.56 MHz
`
`4,400 A/min
`
`
`
`
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`3 of 36
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`LAM 00003
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`Good wafer—to-wafer thickness reproducibility is achieved because
`every wafer sees the same deposition environment. Customer data indi-
`cates better than 1% (l 6) wafer-to-wafer reproducibility over 2,325
`consecutive wafers.
`
`
`
`CHARACTERIZATION DATA — UNDOPED Si02
`
`Within-Water Uniformity
`200 mm Water
`
`Net System Throughput
`(includes Plasma Clean)
`
`
`
`
`
`lietThroughput(Valli)
`
`Mean thickness: seem
`Standard Iieviatlen: new. (1 a)
`Interval: 1%
`
`The overall averaging effect of multi-station sequential deposition
`results in excellent uniformity on wafers as large as 200 mm.
`
`0.6
`
`0.7
`
`1.0
`0.9
`Thickness (microns)
`
`Novellus’ multi—station continuous processing design provides high net
`throughput over a wide range of film thicknesses as demonstrated with
`the Concept One.
`
`Fllm Thickness Reproducibility
`
`Hilloek Control
`
`300
`
`600
`
`900
`
`1200
`
`1500
`
`1800
`
`2100
`
`2400
`
`c
`
`2"
`
`4h
`
`Bil
`
`16H
`
`32"
`
`1|
`
`2|
`
`4|
`
`8|
`
`Wafer Number
`
`Time at Temp Prior Ilep
`
`The Concept One minimizes the time at temperature prior to deposition
`resulting in reduced hillock formation. This time is typically less than
`eight seconds. Cold deposited aluminum was used in this evaluation.
`
`SAMSUNG EXHIBIT 1039
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`_a. D
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`3
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`RelativeDensityem-z
`
`
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`CHARACTERIZATION DATA — DOPED Si02
`
`Within-Water tlnilormity
`BPSG ~15tl mm Wafer
`
`Mean Thickness: 4405M
`Standard Devlatlon: 0.30% (1 o)
`Interval: 1%
`
`In a multi-station continuous deposition system, improved uniformity
`is obtained by averaging out the random variations of each deposition
`station,
`
`'
`
`‘
`
`SIMS Analysis
`
`2|Jllll
`
`4oon
`flllllll
`Spotter Depth (A)
`Secondary Ion Mass Spectroscopy (SIMS) analysis (if a BPSG film
`demonstrates constant composition throughout the film.
`
`soon
`
`ElllJI]
`
`Within-Water Dopant Uniformity
`BPSG — 200 mm Water
`
`Dopant Reproducibility
`BPSG
`
`
`
`
`
`2.98 Concentration[WP/n)
`
`3.00
`3.0!]
`
`2.90 WI%P
`2.94 WI%B
`
`2.92
`
`0 Phosphorus
`D Boron
`
`The multi—station design of the Concept One and the excess atomic oxygen of the PECVD process result in excellent dopant
`uniformity and reproducibility.
`
`30
`Water Number
`
`SAMSUNG EXHIBIT 1039
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`LAM 00005
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`Page 5 of 36
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`CHARACTERIZATION DATA — DOPED SiOZ
`____________
`
`BPSG Boron Calibration
`
`.
`
`BPSG Phosphorus calibration
`
`
`
`Concentration(“1%)
`
`
`
`Concentration{MD/o)
`
`.
`
`.
`
`0.00
`
`0.12
`
`
`
`
`
`0.04
`
`0.05
`
`0.12
`
`0.14
`
`0.10
`0.00
`0.10
`0.00
`His/Hydride
`'
`Ema/Hydride
`Excess atomic oxygen minimizes competing reactions between hydrides and results in independent and linear dopanl control.
`
`System-to-Syslem flopant Reproducibility
`(Pso)
`
`
`
` PhosphorusConcentration("1%)
`
`200
`
`PH3 Flow (sum)
`
`300
`
`The Concept Ono design results in excellem reproducibility within a system and system-lo-syslem as well.
`
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`6 of 36
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`SYSTEM DESCRIPTION
`
`The Concept One system is comprised of four modules: the pro-
`cess module1 two RF generators and a vacuum pump package. A
`general description of the modules follows:
`Process Module
`
`Dimensions
`
`Weight
`
`Location
`
`38" wide x 67“ deep x 80" high
`0.97 m wide x 1.70 m deep x 2.03 m high
`
`2500 lb (1134 kg)
`
`Either to-the-wall or free standing in
`clean room
`
`RF Generator (Concept One)
`(High Frequency)
`
`Dimensions
`
`Weight
`
`Location
`
`17" wide X 21" deep x 18.5" high
`0.43 m wide x 0.53 m deep x 0.47 m high
`
`225 lb (102 kg)
`
`Installed in service aisle. within 12 feet
`(3.7 m) of pump package
`
`RF Generator (Concept One-200)
`(High Frequency)
`
`Pump Package (Oil)
`Dimensions
`
`Weight
`LOcation
`
`37" wide x 49.5" deep x 42.5“ high
`0.94 m wide x 1.26 m deep x 1.08 m high
`
`11501b (522 kg)
`
`lnsnilled in service aisle. within 60 feet
`(18.3 m) of process module. Foreline
`should have no more than four 90" bends.
`
`Pump types
`
`Loadlock: 2’stage, 46 cfm mechanical
`
`Process chamber: 2 stage, 46 cfm mech—
`anical pump and Roots-type blower
`(685 cfm total displacement).
`
`SYSTEM OPTIONS
`
`50 Hz Operation
`
`Rear Panel Kit
`
`
`
`Lnstalled in service aisle, within 12 feet
`Location
`
`(317 m) of pump package
`
`Dimensions
`
`Weight
`
`Location
`
`RF Generator
`
`(Low Frequency)
`
`Dimensions
`
`1.7" wide x 21" deep x 27" high
`0.43 m wide x 0.53 In deep x 0.69 m high
`
`SECS II
`
`375 lb (170 kg)
`
`Installed in service aisle, within 12 feet
`(3.7 m) of pump package
`
`17" wide X 21" deep x 18.5" high
`0.43 m wide x 0.53 m deep x 0.47 m high
`
`Front Panel
`Keyboard
`
`Wafer Size Kits
`
`Weight
`
`13011) (59 kg)
`
`Verification of system electronics to
`accept 50 Hz power input.
`
`Set of téar panels to enclose the sides of
`the process chamber on systems installed
`free standing in clean room.
`
`Software and electronics to provide
`communication capability with host
`computer using SEMI SECS El protocol.
`
`Keyboard and communications port to
`allow operations to be performed from
`the clean room side of the system in addi-
`tion to the maintenance aisle.
`
`Hardware kit for converting system to a
`different wafer Size. Includes necessary
`wafer handling parts and either six wafer
`cassettes (100/125/ 150 mm) or four wafer
`cassettes (200 mm).
`
`SAMSUNG EXHIBIT 1039
`
`LAM 00007
`
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`Page 7 of 36
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`SAMSUNG EXHIBIT 1039
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`

`

`
`
`SYSTEM REQUIREMENTS
`
`FILM PARAMETER
`EVALUATION METHODOLOGY
`
`The following represents the overall requirements of the system:
`
`Power
`
`Cooling Water
`
`Clean Dry Air
`.
`House Nitrogen
`
`208 VAC +10%l—5%, 60 i 1 Hz, 3 Phase,
`90 Amp, 5 wire-Y
`
`Process Module:
`30 psi differential at 7.5 LPM (2.0 GPM),
`20—100 Kabul-cm, 20 :i; 5°C_
`High Frequency Generator;
`7.5 LPM (2.0 GPM) Minimum
`(Concept One)
`15.1 LPM (4.0 GPM) Minimum
`(Concept One - 200)
`
`75 i 5 psig (Maximum flow of 1 Shit)
`
`Process Module:
`75 a 5 psig, (36 slm impulse)
`Oil Pump Package: 60 i 15 psig, 12 slm
`
`I Uniformity and reproducibility calculations are based on the fol~
`lowing formula for the standard deviation:
`
`(x- — 2):
`J
`n - 1
`
`j :1
`
`Bottled Nitrogen
`
`99.99% pure nitrogen at 20 psig for gas
`
`Refractive Index
`
`sysmm purgmg
`99.99% pure SiH4 at 20 psig
`99.9% pure N20 at 20 psig
`
`5% PH; in N2 at 20 psig
`(Electronic grade)
`
`A .A calibration ellipsometer or Metricon prism coupler is used; the
`latter only with films greater than 0.5 microns.
`Film Stress
`
`Angular deflection is measured before and after film deposition.
`An FSM or Flexus system is used.
`
`5% BZH6 in N2 at 20 psig
`(Economic grade)
`99.7% pure QFS at 20 psig'for etch clean-
`ing of system
`
`Pinholes
`Utilizing an alcohol bubbler (Gasonics Atomel), density is mea-
`g surcd on films > 3000 A thick, deposited on bare silicon. Bias of
`40 V/micron is used for SiO2 and 30 V/micron for SiN.
`
`The fOHOWinS melhOdS are “539 to emulate film Pammelel's for
`t
`d
`coir“
`t'
`. F'lms a
`d
`s't d
`b re.
`li hed
`gum“ ea Sp
`'ca “ms
`1
`’6 “9° “5 °" a
`P0 5
`'li on wafe s.
`SI c
`I
`'b'l't
`d
`'t [R
`Tl' k
`U 'fo
`“c ness m "my epm um “y
`Measurements are made with the Prometrix Spectramap SM 200
`using standard statistical programs. Within—wafer calculations
`are based on a minimum of 49 points per wafer, excluding those
`in a six (6) millimeter ring around the periphery.
`
`requirements.
`
`Silane
`Nitrous Oxide
`
`Phasphine
`
`Diborane
`
`Cst
`
`Oxygen
`
`Exhaust
`
`99.99% pure 0; at 20 psig for etch clean—
`mg and process
`Cabinet exhaust: 150 to 200 cfm, negative
`05 to 1.0 inch draw
`Gas Panel and Pump Exhaust: scrubber
`withéO—cfmacapacity~at~a-negati¥670§
`inch draw
`
`Notes:
`1. Please refer to the Novellus Facility Planning and Installation
`Manual for complete installation information.
`
`2. User should consult local safety codes for additional facilities
`
`Particles
`The TENCOR Model 4500 particle counter is used with clean
`prime wafers having less than 20 particles per wafer. After film
`deposition, the counter must be calibrated with a film of the
`same thickness deposited under the same conditions. Reference
`filmethielmess-forenoted‘speeificationriS‘l'OflorATdepositcd‘and
`measured under class 10 environment utilizing a (six) 6 mm
`edge exclusion.
`
`SAMSUNG EXHIBIT 1039
`8 of 36
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`Page 8 of 36
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`SAMSUNG EXHIBIT 1039
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`

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`PROCESS MODULE DIMENSIONS
`
`DPUDHAL
`“20$ DELIVERY UNIT
`
`39..
`2.26m
`TOP PLATE
`EXTENDED
`
`uuucEPT ORE-2M
`1"! mum PANEL
`
`"
`
`RIGHT
`— (FAGILITY SIDE)
`
`
`
`
`mom
`E m:
`OPERATOR
`mm
`; '
`;
`AGEESS
`AREA
`AREA
`
`
`
`FABIlITY
`
`SAMSUNG EXHIBIT 1039
`9 of 36
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`RF GENERATOR DIMENSIONS
`
`High Frequency
`
`HEM
`SERUIEE
`“£588
`
`Miss
`
`
`
`
`
`CEHGEPT ONE-IUD
`
`27..
`0'69""
`
`.
`
`,
`
`.
`
`u
`
`-
`
`mum
`nrmmn
`mass
`
`RF. GENERATOR DIMENSIONS
`
`Low Frequency
`
`HF EHOKE
`ASSEMBLY
`
`urmmn
`access
`
`_,
`
`;
`
`same:
`
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`OIL PUMP PACKAGE DIMENSIONS
`
`FILTER REMOVAL ACCESS
`
`I
`
`
`
`SERVEE
`RGEESS
`
`SERVICE
`ABBESS AREA
`40:.
`
`SAMSUNG EXHIBIT 1039
`1 of 36
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`
`SALES OFFICES
`
`EASTERN REGION
`14 Rainbow Ridge Way
`Georgetown, MA 01333
`Tel: 508/352_7355
`FAX: 508/352_6984
`
`CENTRAL REGION
`1016 La Posada Drive
`#250
`Austin, TX 78752
`Tel: 512/467-0323
`FAX: 512/4670324
`
`[2820 Hillcrest Road
`#122
`Dallas, TX 75230
`Tel: 214/960-0296
`FAX: 214/991-4406
`
`2131 E. Broadway
`#22
`-
`Tempe, AZ 85282
`Tole: 602/ 494-7220
`FAX: 602/494-7218
`
`L’Adagio
`Le Collct dc Michoune
`
`83510 Lorgues France
`Tel: (33) 946—76952
`FAX: (3 3) 946—76990
`
`NIPPON NOVELLUS, KK.
`
`CORPORATE HEADQUARTERS
`
`1-[2-3 Kamitsuruma
`Sagamihara-Shi
`Kanagawa—Ken. 228 Japan
`TC]: 81 (42) 747-8751
`FAX: 81 (42) 747-8718
`
`NOVELLUS KOREA
`3rd Floor: WMU 3153-:
`23946, Poi Dong
`Kang Narn~Ku, Seoul, Korea
`Tel: 82 (2) 575-7691
`FAX: 32 (2) 571-0803
`
`DISTRIBUTOR
`SekiTechnotron Corporation -
`5-6-30, Kiba Koto-Ku
`Tokyo, 135 Japan '
`Tel: 81 3 (3) 320-1713
`FAX: 31 3(3) 8204729
`
`REPRESENTATIVES
`Intraco Asia Taiwan
`41 Shuang Fen Road
`Shuang Chi Tsun, Pao Shan
`Hsin—Chu City
`
`Taiwan 30301117010
`T511 885 (35) 203315
`FAX: 836 (35) 204829
`
`I l A' S'
`“mm m mgapore
`1C Duxton Hi1]
`Singapore 0208
`Tel!
`
`Novellus Systems, Inc.
`81 Vista Montana
`San Jose, CA 95134
`T611 408/943-9700
`FAX: 408/943-0202
`
`3950 North First Street
`Sim 1088. CA 95134
`Tel: 408/943—9700
`FAX:I408/432-5399
`=
`
`’
`
`A
`
`‘ NOVELLUS
`-
`rmsr IN PRODUCTIVITY
`
`umber. 199:
`6 Nunllus Systems, Inc.
`
`
`
`NOVELLUS SYSTEMS LTD.
`The Marlborough Rooms
`68 High Street
`Weybridge.Surrey
`‘
`K113 83L England
`Tel: 44 (932) 850080
`FAX: 44 (932) 850883
`
`FAX: (65) 2.27—9673
`
`'
`
`Prlnlcrl!nll.5.h.
`
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`Page 13 of 36
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`SAMSUNG EXHIBIT 1039
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`SAMSUNG EXHIBIT 1039
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`LAM 00014
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`Page 14 of 36
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`SAMSUNG EXHIBIT 1039
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`.50303onwewomb1:03am:.00wane:
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`SAMSUNG EXHIBIT 1039
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`LAM 00015
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`Page 15 of 36
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`SAMSUNG EXHIBIT 1039
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`

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