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`nuy. 9:0 2006
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`Tapes
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`476 Green View Drive
`Walnut Creek, CA 94596-5459
`T 925.947.1909
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`dif@mtag.com
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`October 2, 2006
`
`PATENT APPLICATION
`
`IN THE UNITED STATES PATENT AND TRADEMARKOFFICE
`
`In re application of
`
`Daniel L. Flamm
`
`ApplIn. No.: 10/439,245
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`Filed: 5/14/2003
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`Docket No: OA0301
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`Group Art Unit: 1765
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`Examiner: A. Alanko
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`AMENDMENT UNDER37 C.F.R. § 1.111
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`MAIL STOP AMENDMENT
`Commissioner for Patents
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`Sir:
`
`In responseto the Office Action dated, June 1, 2006, please amend the above-identified
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`application as follows on the accompanying pages.
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`AMENDMENTSTO THE CLAIMS.0... ccc ccccscscssscssccsesessesseeseccrssessnesssensensesesseasseeessasseessessseeeees2
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`TABLE OF CONTENTS
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`REMARKS0. iececcescescsceceseecseceeceseerecescsaecseceseneessessseseeeeesscsseseesseeesseseecssenssseceeesessasessessseseeseaess 21
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`
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`AMENDMENTUNDER37 C.E.R.§ 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: 0A0301
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`AMENDMENTS TO THE CLAIMS
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`This listing of claims will replace all prior versions andlistings of claims in the
`
`application:
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`LISTING OF CLAIMS:
`
`1.-55 (canceled)
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`56. (currently amended) A methodofetching a substrate in the manufacture of a device,
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`the method comprising:
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`placing a substrate having a film thereon on a substrate holder in a chamber, the substrate
`
`holder having a selected thermal mass;
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`setting the substrate holderto a selected first substrate holder temperature with a heat
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`transfer device;
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`etching a first portion of the film while the substrate holder is at the selectedfirst
`
`substrate holder temperature;
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`with the heat transfer device, changing the substrate holder temperature from the selected
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`first substrate holder temperature to a selected second substrate holder temperature; and
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`etching a secondportion of the film while the substrate holderis at the selected second
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`substrate holder temperature;
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`
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`
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`AMENDMENTUNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`wherein the thermal massof the substrate holderis selected for a predetermined
`
`temperature change within a specified interval of time during processing; the predetermined
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`temperature change comprises the change from the selected first substrate holder temperature to
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`the selected second substrate holder temperature, and the specified time interval comprises the
`
`time for changing from the selected first substrate holder temperature to the selected second
`
`substrate holder temperature.
`
`57. (currently amended) The method of claim 56 wherein the first-substrate-helder
`
`
`
`
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`temperaturesubstrate-helderby_heattransfermeansis-chanpedtothe-second temperature
`
`
`
`
`
`
`
`
`
`
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`eoupledte-thesubstrateholderportion of the film comprises a material composition thatis
`
`different from the material composition of the first portion of the film.
`
`58. (currently amended) The method of claim 56 wherein the change from thefirst
`
`substrate holder temperature to the second substrate holder temperature is an in-situ process
`
`during the first portion etching step and the second portion etching step.
`
`59. (previously presented) The methodof claim 56 wherein the etching of thefirst
`
`portion of the film and the etching of the second portion of the film are conducted in a
`
`substantially constant plasma environment.
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`
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`AMENDMENTUNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`60. (previously presented) The methodof claim 56 wherein etchingat least one of the
`
`portions of the film comprisesradiation.
`
`61. (previously presented) The methodof claim 56 wherein etching at least one of the
`
`portions of the film is an ion bombardmentaided process.
`
`62. (previously presented) The methodof claim 56 wherein:
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`a first substrate etching temperature correspondsto the first substrate holder temperature;
`
`a second substrate etching temperature correspondsto the second substrate holder
`
`temperature; and
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`the first and the second substrate etching temperatures are in a knownrelationship to the
`
`first and the second substrate holder temperatures.
`
`63. (previously presented) The methodof claim 62 whereinthefirst etching temperature
`
`is substantially the first substrate holder temperature and the second etching temperature is
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`substantially the second substrate holder temperature.
`
`64. (previously presented) The method of claim 56 wherein:
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`a first substrate etching temperature correspondsto thefirst substrate holder temperature;
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`a second substrate etching temperature correspondsto the second substrate holder
`
`temperature;
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`the first substrate etching temperature is higher than the second substrate etching
`
`temperature; and
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`the first portion of the film is etched before the second portion of the film.
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`65. (previously presented) The method of claim 56 wherein:
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`a first substrate etching temperature correspondsto the first substrate holder temperature;
`
`a second substrate etching temperature correspondsto the second substrate holder
`
`temperature;
`
`the first substrate etching temperature is lower than the secondsubstrate etching
`
`temperature; and
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`the first portion of the film is etched before the second portion of the film.
`
`66. (previously presented) The method of claim 56 wherein the substrate holder
`
`comprises an electrostatic support chuck having a surface for supporting a substrate in a reaction
`
`chamber, the electrostatic support chuck overlays a heat exchange region, and the heat exchange
`
`region includesat least one fluid passage through whicha fluid can be circulated to heat and/or
`
`cool the substrate holder.
`
`67. (previously presented) The method of claim 66 wherein the heat exchange region
`
`includesat least two separate fluid passages, each fluid passage being configured to have an
`
`independentinlet and an independentoutlet.
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`68. (currently amended) The methodof claim 56 wherein the substrate holder heat
`
`transfer device includesa plurality of heating elements.
`
`69. (previously presented) The method of claim 68 wherein the heating elements are
`
`configured to selectively heat one or more zonesofthe substrate holder.
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`70. (currently amended) A methodof etching a substrate in the manufacture of a device,
`
`the method comprising:
`
`heating the asubstrate holderto a first substrate holder eperatiag temperature with a heat
`
`transfer device, the substrate holder having at least one temperature sensing unit,
`
`placing a substrate having a film thereon on a the substrate holder in a chamber;
`
`etching a first portion of the film at a selected first substrate temperature; and
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`etching a second portion ofthe film at a selected second substrate temperature, the
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`selected second substrate temperature being different from the selected first substrate
`
`temperature;
`
`wherein substrate temperature is changed from the selected first substrate temperature to
`
`the selected second substrate temperature, using a measured wafer temperature, within a
`
`preselected time interval for processing, and at least the first substrate temperature or the second
`
`
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`substrate temperature, in single or in combination, is above room temperature. eperatingthe
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`
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`
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`71. (previously presented) The method of claim 70 wherein a continuous etching process
`
`comprises etching the first portion of the film and etching the second portion ofthe film.
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`
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`72. (currently amended) The methodof claim 70 wherein the firstsubstratetemperature
`
`rae substrate
`
`temperature changeis byat least heat transfer with the substrate using at least an electrostatic
`
`chuck.
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`
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`73. (currently amended) The method of claim 70 wherein the first-substratetemperature
`
`
`
`
`
`is-changedtothetemperaturesecond-substrate substrate temperature changeis by transferring
`
`
`
`
`
`heat energy usingat least a pressure of gas behind said substrate.
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`74. (currently amended) The methodof claim 70 wherein said the first substrate
`
`temperature is changed to the second substrate temperature by transferring energy using atleast
`
`radiation.
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`
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`AMENDMENT UNDER37 C.FE.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`75. (previously presented) The method of claim 70 wherein changing the substrate
`
`temperature comprises selectively transferring energy in the form of heat from a substrate
`
`temperature control system to the substrate holder.
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`76. (previously presented) The method of claim 70 wherein changingthe selectedfirst
`
`substrate temperature to the selected second substrate temperature is an in-situ process while
`
`etching thefirst film portion and etching the second film portion.
`
`
`
`77. (currently amended) The method of claim 70 wherein the etehine-efthefirstportion
`
`
`
`
`
`ofthefilm-andtheetchine-ofthe second portion of the film are-conductedin-a-substantially
`
`
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`constantplasma-environment comprises a material composition that is different from the material
`
`composition ofthe first portion of the film.
`
`78. (previously presented) The method of claim 70 wherein etching at least one portion of
`
`the film comprisesradiation.
`
`79. (previously presented) The methodof claim 70 whereinetchingatleast one portion of
`
`the film comprises an ion bombardmentaided process.
`
`
`
`AMENDMENT UNDER37 C.E.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`80. (currently amended) A methodof processing a substrate during the manufacture of a
`
`device, the method comprising:
`
`placing a substrate having a film thereon on a substrate holder within a chamber of a
`
`
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`plasma discharge apparatus, the plasma discharge apparatus comprising:a-substratetemperature
`
`sensor_a substrate temperature control system inehiding comprising a substrate temperature
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`sensor and a substrate temperature control circuit operable to adjust the substrate temperature to
`
`a predetermined substrate temperature value with execute a first heat transfer process; and the
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`substrate-helder having a substrate holder temperature control system comprising a substrate
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`holder temperature sensor and a substrate holder temperature control circuit operable to adjust
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`the substrate holder temperature to a predetermined substrate holder temperature value with a
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`second heat transfer process;
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`performinga first film treatmentof a first portion of the film at a selected first substrate
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`temperature;
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`with the substrate temperature control circuit, changing from the selected first substrate
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`temperature to a selected second substrate temperature, the selected second substrate temperature
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`being different from the selected first substrate temperature; and
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`performing a second film treatment of a secondportion ofthe film at the selected second
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`substrate temperature;
`
`
`
`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`
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`wherein the substrate holder is heated above room temperature during at least one of the
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`first or the second film treatments, and the substrate temperature control circuit is operable to
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`change the substrate temperature from the selected first substrate temperature to the selected
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`second substrate temperature within a preselected time period to process the film.
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`81. (currently amended) The method of claim 80 wherein the substrate temperature
`
`control circuit system comprises the substrate holder temperature control circuit system.
`
`82. (currently amended) The method of claim 80 wherein the substrate holder
`
`
`temperature control circuit systera comprises the substrate temperature control circuit system.
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`83. (previously presented ) The method of claim 80 wherein at least one film treatment,
`
`selected from thefirst film treatment and the second film treatment, comprises the substrate
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`temperature beingless than the substrate holder temperature.
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`
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`84. (currently amended) The method of claim 80 whereinatleasttreatment,enefilm
`
`
`
`
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`
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`
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`temperaturebeingcreatersubstrateholdertemperaturethan-the the second portion ofthe film
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`
`
`
`
`
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`comprises a material composition that is different from the material composition of the first
`
`portion of the film.
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`85. (previously presented ) The method of claim 80 wherein at least one film treatment,
`
`selected from the first film treatment and the second film treatment, comprises selectively
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`transferring heat energy from the substrate holder to the substrate.
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`86. (previously presented ) The method of claim 80 wherein at least one film treatment,
`
`selected from thefirst film treatment and the second film treatment, comprises selectively
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`transferring heat energy from the substrate to the substrate holder.
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`87. (previously presented) The method of claim 80 whereinatleast one film treatment,
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`selected from thefirst film treatment and the second film treatment, comprises maintaining the
`
`temperature of the substrate holder above room temperature andselectively transferring heat
`
`energy from the substrate into the substrate holder.
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`88. (currently amended) The method of claim 80 whereinat least one film treatment,
`
`selected from thefirst film treatment and the second film treatment, comprisesselectively
`
`il
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`
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`transferring energy in the form of heatfromthe-substratesystemto thetemperature-centrol
`
`
`
`
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`substrate holder with the substrate temperature control circuit and maintaining the substrate
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`holder temperature above room temperature with the substrate holder control circuit.
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`89. (previously presented) The method of claim 80 wherein at least one film treatment,
`
`selected from thefirst film treatment and the second film treatment, comprises etching.
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`90. (previously presented).The method of claim 80 whereinat least one film treatment,
`
`selected from thefirst film treatment and the second film treatment, comprises chemical vapor
`
`deposition.
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`91. (currently amended) The method of claim 80 wherein at least one film treatment
`
`comprises maintaining the substrate temperature at a selected value from about 300 to 500
`
`
`
`
`
`degrees centigrade,selected_fromthe-firstfilmtreatment-andthesecondfilmtreatment,s-anion
`
`
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`assistedprocess.
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`92. (previously presented) The method of claim 80 wherein the first temperature is
`
`changedto the second temperature by transferring heat using at least a pressure of gas behind the
`
`substrate.
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`12
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`93. (previously presented) The methodof claim 80 wherein the first substrate temperature
`
`is changed to the second substrate temperature by transferring energy using atleast radiation.
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`94. (currently amended) A method ofprocessing a substrate in the manufacture of a
`
`device, the method comprising:
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`placing a substrate having a film thereon on a substrate holder in a processing chamber;;
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`the processing chamber comprising the substrate holder, a substrate control circuit operable to
`
`
`
`
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`adjust the substrate temperaturecentrelsystemte-controltemperature_ofthesubstrate, athe
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`
`
`
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`substrate holder temperature sensor, and a substrate holder control circuit operable to maintain
`
`
`
`
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`the substrate holder temperature-centrelsystemte-contreltemperature-ofthe-substratethe
`
`
`
`
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`holder:
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`performinga first etching of a first portion of the film at a selected first substrate
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`temperature;
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`performing a second etching of a second portion ofthe film at a selected second
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`substrate temperature, the second temperature being different from the first temperature;
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`wherein atleast one of the film portions is etched while heat is being transferred fromthe
`
`
`
`
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`substrate-holdercentrolsystemto the substrate holder with the substrate holder control circuit
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`
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`controlsystem; and
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`13
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`
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`AMENDMENT UNDER37 C.E.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: 0A0301
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`effectuatine-a the substrate temperature control circuit effectuates the change inthe
`
`
`
`substratetemperature from the first substrate temperature to the second substrate temperature
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`within a speeified preselected time period. te-precess-the-flm-
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`95. (previously presented) The methodof claim 94 wherein the etchingofat least one of
`
`the film portions comprises heat flow from the substrate holder into the substrate.
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`96. (previously presented) The method of claim 94 wherein the etching of at least one of
`
`the film portions comprises heat flow from the substrate into the substrate holder.
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`97. (previously presented) The methodof claim 94 wherein the etching ofat least one of
`
`the film portions comprises maintaining the temperature of the substrate in the range of 50°C to
`
`100°C.
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`98. (currently amended) The methodofclaim 94 wherein the preselected echaracteristie
`
`time period to change from thefirst substrate temperature to the second substrate temperature
`
`subtends less than about 5 percent ofthe a total etching processtime.
`
`14
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`
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`AMENDMENT UNDER37 C.EF.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`99. (cancelled) The method of claim 94 wherein the characteristic time period to change
`
`from the first substrate temperature to the second substrate temperature subtendsless than 15
`
`percent of the total etching process time.
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`100. (currently amended) A methodfor processing layers which are included in a stack of
`
`layers positioned on a substrate, the method comprising:
`
`placing the substrate on a substrate holder;
`
`sensing a substrate holder temperature,
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`etching at least a portion of a first silicon-containing layer in a chamber while the
`
`substrate is maintained at a selected first substrate temperature; and
`
`etching at least a portion of a secondsilicon-containing layer in the chamber while the
`
`substrate is maintained at a selected second substrate temperature;
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`wherein the substrate holder temperature is heated to maintained-abeve a temperature
`
`sufficientio allow controling operable to maintain at least one of the selectedfirst and the
`
`selected second substrate temperatures above 49°C, and
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`the-change the substrate temperature is changed from the first substrate temperature to the
`
`second substrate temperature eccurs-in-a-contreHed-manner; with a control circuit operable to
`
`effectuate the changing within a preselected seleeted time period that is less than the overall
`
`15
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`process time associated with the etchingthe first silicon-containing layer and the secondsilicon-
`
`containing layer.
`
`101. (previously presented) The method of claim 100 wherein the change from thefirst
`
`substrate temperature to the second substrate temperature occurs within less than about 5 percent
`
`of the total etching process time.
`
`102. (previously presented) The methodof claim 100 whereinat least one layer is etched
`
`in a chlorine-containing ambient.
`
`103. (currently amended) The method of claim 100 wherein at least one silicon-
`
`containing layer is etched in a chlorine-containing ambient;
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`the first layer is a polysilicon layer, the second layeris a silicide layer and the stack
`
`includes an oxide layer;
`
`the second substrate temperature is higher thanthe first substrate temperature; and
`
`:
`
`the
`
`otels
`
`has
`
`hich
`
`selectivi
`
`he
`
`oxide
`
`laver-
`
`a portion of at least one layeris selectively etched relative to the oxide layer.
`
`16
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`104. (currently amended) A method for manufacturing a device comprising an integrated circuit,
`
`the method comprising:
`
`transferring a substrate comprising a stack of layers includingasilicide layer into a
`
`chamber, the chamber comprising a substrate holder;
`
`sensing the substrate holder temperature;
`
`heating the substrate holder with a substrate holder control circuit and a heating device to
`
`
`maintain a thesubstrate holder atatemperature that is operable to place effectuate the a substrate
`
`temperature above room temperature while processing the substrate;
`
`processing the substrate ia-the-chamber on the substrate holderat a first substrate
`
`temperature; and
`
`processing the substrate+a+the-chamber on the substrate holder at a second substrate
`
`temperature to etch at least a portion ofthe silicide layer;
`
`wherein the first substrate temperature is different from the second substrate temperature
`
`and the first substrate temperature is changed to the second substrate temperature with a substrate
`
`temperature control circuit within a preselected time to etch the silicide layer.
`
`17
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`
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`105. (cancelled) The method of claim 104 where the first substrate temperatureis less
`
`than about 90 degrees centigrade andthesilicide layer is etched above about 99 degrees
`
`centigrade.
`
`106. (previously presented) The methodof claim 104 whereinthefirst substrate
`
`temperature is changed to the second substrate temperature within a selected period of time byat
`
`least heat transfer to the substrate using at least an electrostatic chuck.
`
`107. (previously presented) The method of claim 104 wherein the first substrate
`
`temperature is changedto the second substrate temperature by transferring heat using at least a
`
`pressure of gas behindthe substrate.
`
`18
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`
`
`AMENDMENTUNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
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`108. (previously presented) The method of claim 104 wherein thefirst substrate
`
`temperature is changedto the second substrate temperature by transferring energy usingatleast
`
`radiation.
`
`109. (currently amended) The methodof claim 56 wherein the substeate-holderis-sette
`
`
`
`second portion of the film comprises a material composition different from the first portion of
`
`the film.
`
`110. (currently amended) The methodof claim 56 wherein the change from thefirst
`
`substrate holder temperature to the second substrate holder temperature is effectuated with a
`
`control circuit eeeursin-a-contreledmanner.
`
`111. (previously presented) The method of claim 56 wherein the substrate holder reaches
`
`the second substrate holder temperature at approximately a selected time.
`
`112. (currently amended) The methodof claim 70 wherein the first substrate holder
`
`operating temperature is above room temperature.
`
`113. (currently amended) The methodof claim 80 wherein maintainine-the-substrate
`
`
`
`device-at least one film treatment comprises transferring energy from the substrate holder with a
`
`heat transfer device.
`
`19
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`
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`114. (currently amended) The method of claim 94 wherein the second portion of the film
`
`comprises a material composition different from the first portion of the film-change-from-the-first
`
`
`
`115. (currently amended) The method of claim 94 wherein the substrate reaches
`
`temperature is the second substrate temperature at approximately a selected time.
`
`116. (currently amended) The methodofclaim 104 comprising processing the substrate
`
`while maintaining the substrate temperature at a selected value within 180 to 220 degrees
`
` centigrade. ¥
`
`
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`117. (currently amended) The method of claim 104 comprising processing the substrate
`
`while maintaining the substrate temperature at a selected value within 50 to 100 degrees
`
` centigrade. whereinth
`
`
`
`temperature-oecurscontroledmanner.in-a-
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`
`
`
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`20
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`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`REMARKS
`
`Applicant thanks the Examinerfor graciously granting an interview and taking the time
`
`to provide helpful explanations and suggestions.
`
`Prior to this amendment Claims 56-98, 100-104, 106-117 were pending. Claims 1-55, 99
`
`and 105 were previously cancelled.
`
`Claims 56, 58, 68, 70, 72-74, 77, 80-82, 84, 88, 91, 94, 98-101, 103-105, 109, 110, and
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`112-117 are currently amended pursuant to examiner’s guidance..
`
`The Office Action objected to the specification as failing to provide antecedent basis for
`
`claims 100 and 109 andit rejected claim 109 under 35 U.S.C. 251. By this amendmentthese
`
`objections and the 35 U.S.C. 251 rejection are mooted.
`
`Claims 99 and 105 are cancelled. The claim identifiers were in error and have been
`
`corrected.
`
`Claims 57, 63, 68 and 103 were rejected under 35 U.S.C. 112.
`
`Claims 56-62, 64, 70-71, 74-79, 109-112, and 114 were rejected under 35 U.S.C. 102(b)
`
`as being as being anticipated by JP 59-076876.
`
`Claims 70-82, 84-96, 98 and 113-115 were rejected under 35 U.S.C. 102(b) as being
`
`anticipated by Tsuboneet al (US 5,320,982).
`
`Claims 97-98, 100-104, 106-108 and 116-117 were rejected under 25 U.S.C. 103(a) as
`
`being unpatentable over Tsuboneet al. (US 5,230,982) in view of Shin et al. (US 6,087,264).
`
`Claims 83 and 112 were rejected under 35 U.S.C. 103(a) as being unpatentable over Tsuboneet
`
`al. (US 5,320,982) in view of Shin et al. (US 6,087,264) and Olson et al. (US 5,705,433).
`
`21
`
`
`
`AMENDMENTUNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`Claims 63, 65, 66-69 and 72-73 were rejected under 35 U.S.C. 103(a) as being
`
`unpatentable over JP 59-076876 in view of Rossmanet al. (US 6,077,357).
`
`Claims 80-89, 91, 97-98, 100-104, 108, 113 and 116-117 were rejected under 35 U.S.C.
`
`103(a) as being unpatentable over JP 59-076876 in view of Shin et al (US 6,087,264).
`
`Claims 90, 92-93 and 106-17 were rejected under 35 U.S.C. 103(a) as being unpatentable
`
`over JP 59-076876 in view of Shin et al. (US 6087,264) and Rossmanet al (US (6,077,357).
`
`The amendments in Claims 56, 58, 68, 70, 72-74, 77, 80-82, 84, 88, 91, 94, 98-101, 103-
`
`105, 109, 110, and 112-117 are believed to cure the issues raised by the examiner according to
`
`the responses below.. No new matter has been added.
`
`Hence Claims 56-98, 100-104, 106-117 are pending in this application. No new matteris
`
`added.
`
`I. Claim 56 Is Not Anticipated by JP 59-076876 Under 35 U.S.C. 102(b) Because by JP 59-
`
`076876 Does Not Teach All of the Limitations.
`
`Atleast, JP 59-076876 does not teach the limitations of setting the substrate holder to a
`
`selected first temperature, selecting a thermal massofthe substrate holder for a predetermined
`
`temperature change within a specified interval of time during processing, and a specified time
`
`interval comprising the time for changing from the selected first substrate holder temperature to
`
`the selected second substrate holder temperature.
`
`JP 59-076876 (FIG. 4) merely teaches controlling temperature of two heat transfer fluid
`
`reservoirs with controllers at 21 and 22 (to 30C and 60C respectively in the disclosed
`
`22
`
`
`
`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`embodiment), not setting the temperature of the substrate holder (electrode)itself to a selected
`
`first temperature.
`
`The heating in FIG. 4 of JP 59-076876is by a fluid. Twofluids are for the temperature
`
`of the electrode 19. JP59-07686 teaches to change electrode temperature by operating the three
`
`way cocks 23 and 24 (p. 5, line 22) to divert one fluid, having a controlled temperature at a
`
`reservoir, into the electrode (FIG. 4 clearly shows the arrangement correspondingto the “rough”
`
`translated text at page 5, lines 13-15).
`
`The actual temperature of the electrode 19 in FIG 4 is inherently determined by various
`
`uncontrolled heat inputs and losses, including from heat transfer while flowing one fluid from
`
`one ofthe reservoirs to the electrode (FIG. 4 showsthe arrangement corresponding to the rough
`
`translation at page 5, lines 13-15). Therefore, the controllers (control circuits) disclosed by JP
`
`59-076876 are not operable for the substrate holder (electrode) temperature itself or for the
`
`substrate temperature.
`
`That the translation is crude and mustbe selectively read with caution as is apparent from
`
`the very beginning of the Detailed Description on p.2. Merely by way of example, on page 2 the
`
`terms (1) “overhanging effect” (lines 9-10), “MoCls seems to be used as a main component”
`
`(lines 17-18), “temperature dependability” (line 19) and “steam pressure”(line 19) are all poorly
`
`translated or mistranslated. Applicant submits that it would be obviousto one of ordinary skill in
`
`the art that “overhanging effect” refers to undercutting, that reference is to MoCls as a reaction
`
`product, that a large temperature dependenceis meant, and that line 19 refers to vapor pressure.
`
`23
`
`
`
`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`II. Claim 70 Is Not Anticipated by Tsubone under 35 U.S.C. 102(b) At Least Because
`
`Tsubone Doesnot Teachall of the Claim Limitations.
`
`Tsubone does not teach heating the substrate holder with a heat transfer device or a
`
`substrate holder having at least one temperature sensing unit. Tsubone teaches cooling a
`
`substrate holder, not heating it.
`
`Using a heat transfer medium is not heating. The paragraph cited by the examiner
`
`beginning at col. 3, line 65 is about circulating a cooling medium (lines 65, 67). Col 4 line 1-2
`
`makesreference to this as a “circulated heat [transfer] medium” (bracketed term inserted) as
`
`evidenced by the construction and language immediately preceding and following (“the heat
`
`transfer gas”at col 4: line 5, 8, 11, et seq.). Hence the referenced paragraphs merely disclose
`
`circulating the medium through the sample bed.
`
`Tsubone discloses cooling the substrate holder, not heating it. For example,at col. 2
`
`lines 40-42 andcol. 4, lines 52-54, Tsubone teaches that the sample bed is cooled by a cooling
`
`medium. Tsuboneteachesthis further at col. 5, lines 27-31 and col. 6, lines 2-3. Moreover,
`
`Tsuboneteaches that when the substrate is slightly above room temperatureat (region i-})
`“control is made in the same wayasc-d (col. 8, lines 66-68: e.g. as Case I where the sampleis
`
`cooled to a predetermined temperature lower than room temperature- col. 8, lines 35-37). Hence
`
`Tsuboneteachescooling the substrate holder for substrate temperature to be [slightly] above
`
`room temperature.
`
`24
`
`
`
`AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`III. Claim 80 Is Not Anticipated by Tsubone under35 U.S.C. 102(b) Because Tsubone Does
`
`not Teach All of the Limitations
`
`Atleast, Tsubonefails to disclose a plasma discharge apparatus having a substrate holder
`
`temperature sensor, a control circuit operable to adjust the substrate holder to a predetermined
`
`substrate holder temperature, and heating a substrate holder above room temperature during at
`
`least one film treatment.
`
`Tsubone does not teach sensing the temperature of a substrate holder, heating a substrate
`
`holder or a system for adjusting the temperature of a substrate holder to a predetermined
`
`substrate holder temperature value. Tsubone merely discloses a predetermined temperature of a
`
`heat medium beforeit is sent to the sample bed (col 4, lines 1-3, col. 5, lines 29).and pipes 10 in
`
`FIG. 1). Tsubones does not teach adjusting a predetermined temperature of the sample bed.
`
`Only the cooling medium is determined, and held at a static temperature of -60C in an
`
`embodiment.
`
`IV. Claim 80 is Not Made Unpatentable by Any Combination of JP 59-076876, Shin or
`
`Tsubone Under35 U.S.C. § 103(a) Because No Combination of These References Disclose
`
`or Suggest All of the Claim Limitations; Furthermore There is No Suggestion or
`
`Motivation to Combine JP 59-076876 or Tsubone with Shin.
`
`There is nothing in Tsubone, JP59-076876 or Shin, alone or in combination to suggest a
`
`substrate holder temperature sensor, a substrate holder control circuit operable for adjusting the
`
`substrate holder to a predetermined substrate holder temperature, and heating the substrate holder
`
`above room temperature for performing oneof two film treatment steps. As well there is
`
`25
`
`
`
`_ AMENDMENT UNDER37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`nothing in any combination of Tsubone, JP59-076876, or Shin, to suggest changing from a
`
`selected first substrate temperature to a selected second substrate temperature within a
`
`preselected time period with the substrate holder maintained above room temperature during at
`
`least one of the steps.
`
`Examinerrefe
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