CERTIFICATION
`
`I, Naoko UNO, c/o Sakai International Patent Office, SF, Toranomon Mitsui Building 8-1,
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`Kasumigaseki 3-chome, Chiyoda-ku, Tokyo, 100-0013, Japan, do hereby certify that I am fluent in the
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`English and Japanese languages and a competent translator thereof, and that to the best of my
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`knowledge and belief the following is a true and correct translation of the accompanying Non-English
`
`Language Japanese Patent Application Laid-Open Publication No. JPOS-136095 A.
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`I certify under penalty of perjury under the laws of the United States that the foregoing is true
`and correct.
`
`Executed this 20th day of January, 2017.
`
`
`
`Signature: __ ~ - ·~ · ________ l l , _ · _ _ _ ,,.,,,_-_ _ _
`
`Naoko Uno
`
`Tokyo Electron Limited
`EXHIBIT 1004
`IPR Petition for
`U.S. Patent No. RE40,264
`
`Page 1 of 5
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`

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`(19) JAPAN PATENT OFFICE (JP)
`
`(12) PATENT APPLICATION
`LAID-OPEN PUBLICATION (A)
`
`(51) Int.Cl5
`H01L 21/302
`
`IDENTIFICATION CODE: JPO REFERENCE NUMBER F1
`B 7353-4M
`M 7343-4M
`
`(11) PUBLICATION NUMBER
`JP 05-136095 A
`(43) DATE OF PUBLICATION
` 1.06.1993
`
`TECHNICAL INDICATIONS
`
`(21) Application Number: 03-326453
`
`(71) Applicant:
`
`(22) Date of Filing: 14.11.1991
`
`(72) Inventor:
`
`Request for Examination: Not Filed
`Number of Claims: 1 (4 pages total)
`
`000004237
`NEC Corporation
`7-1, Shiba 5-chome,
`Minato-ku, Tokyo
`
`Akira OKADA
`c/o NEC Corporation
`7-1, Shiba 5-chome,
`Minato-ku, Tokyo
`
`(74) Representative: Patent Attorney
`Ataru SUGANO
`
`(54) [Title of the Invention] DRY ETCHING DEVICE
`
`(57) [ABSTRACT]
`[OBJECT] To improve responsiveness of a
`temperature control of a semiconductor substrate in
`dry etching.
`
`[CONFIGURATION] Temperature of each of a
`plurality of refrigerant tanks 7, 8, and 9 which supply
`a refrigerant to an electrode 25, on which a
`semiconductor substrate 29 is arranged, is
`individually controlled.
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`Page 2 of 5
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`

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`[Claims]
`[Claim 1] A dry etching device which makes process gas
`introduced into a vacuum processing chamber to be a plasma
`state by applying high-frequency power, and etches an etching
`target object on a semiconductor substrate using the plasma,
`comprising:
` a plurality of refrigerant tanks that supply a refrigerant to an
`electrode on which the semiconductor substrate is arranged; and
` a temperature control device that individually controls a
`temperature of each of the refrigerant tanks.
`[Detailed Description of the Invention]
`[0001]
`[Industrial Applicability] The present invention relates to a
`semiconductor control device, and more particularly, to a
`temperature control system which controls a temperature of an
`electrode on which a semiconductor substrate is arranged in a dry
`etching device.
`[0002]
`[Background Art] Fig. 3 is a diagram illustrating a conventional
`temperature control system of a dry etching device. As
`illustrated in Fig. 3, a primary cooling device 1 controls a
`temperature of a refrigerant in a refrigerant tank 7 through a pipe
`4 by the refrigerant in the primary cooling device 1, according to
`settings transmitted from a controller 28 through a signal cable
`22.
`[0003] The refrigerant tank 7 includes a temperature monitor
`24, and outputs a monitoring temperature to the controller 28
`through the signal cable 23. The refrigerant in the refrigerant
`tank 7 is transferred into the electrode 25 through a pipe 26 and a
`valve 16 by a pump 13, changes a temperature such that the
`monitoring temperature output from the temperature monitor 24
`to the controller 28 through the signal cable 23 coincides with a
`set temperature of the controller 28, and comes back to the
`refrigerant tank 7 through the pipe 27 and the valve 19.
`[0004] As described above, the temperature control system of
`such a kind of dry etching device includes only one refrigerant
`tank 7, and a temperature control of the electrode 25 on which
`the semiconductor substrate 29 is arranged depends on a
`temperature control of the primary cooling device 1.
`[0005]
`[Problem to be Solved by the Invention] In the conventional
`device, e.g., in the temperature control system of the primary
`cooling device 1, there is no problem in keeping a constant
`temperature, but responsiveness to the temperature change is not
`satisfactory, and generally, it takes about 10 minutes for the
`temperature to change from a normal temperature to 0℃ and
`takes about 20 to 30 minutes from 0℃ to -20℃.
`[0006] In a single-wafer-type dry etching device, a process time
`of each semiconductor substrate is about 1 to 5 minutes, and
`when step etching is performed to continuously etch the same
`semiconductor substrate under different process conditions, a
`process time of each step etching is shorter. For this reason, in a
`case where the temperature of the electrode 25 is required to be
`changed for each step etching, the primary cooling device 1 does
`not respond to the temperature change satisfactorily, and it is not
`put into practical use.
`[0007]
` An object of the invention is to provide a dry etching device
`capable of realizing a sufficient responsiveness in a temperature
`control of an electrode.
`
`   
`
`[0008]
`[Means for Solving the Problem] In order to achieve the above
`object, there is provided a dry etching device which makes
`process gas introduced into a vacuum processing chamber to be
`a plasma state by applying high-frequency power, and etches an
`etching target object on a semiconductor substrate using the
`plasma. The dry etching device includes a plurality of
`refrigerant tanks that supply a refrigerant to an electrode on
`which the semiconductor substrate is arranged and a
`temperature control device that individually controls a
`temperature of each of the refrigerant tanks.
`[0009]
`[Operation] A plurality of refrigerant tanks that supply a
`refrigerant to an electrode are provided, and a temperature of
`each of the refrigerant tanks is individually controlled to
`improve responsiveness of the temperature control of the
`electrode and to efficiently change the substrate temperature.
`[0010]
`[Embodiment] Hereinafter, an embodiment of the invention
`will be described with reference to the drawings. Fig. 1 is a
`diagram illustrating a configuration according to an
`embodiment of the invention.
`[0011] In Fig. 1, in the embodiment, a plurality of refrigerant
`tanks 7, 8, and 9 that supply a refrigerant to an electrode 25, on
`which a semiconductor substrate 29 is arranged, are provided,
`and the temperatures of the refrigerant tanks 7, 8, and 9 are
`individually controlled using a plurality of primary cooling
`devices 1, 2, and 3.
`[0012] The primary cooling device 1 controls the temperature
`of a refrigerant in the refrigerant tank 7 through a pipe 4 by a
`refrigerant in the primary cooling device 1 according to settings
`transmitted from a controller 28 through a signal cable 22. The
`refrigerant tank 7 includes a temperature monitor 10, and
`outputs a monitoring temperature to the controller 28 through
`the signal cable 22. The refrigerant in the refrigerant tank 7 is
`transferred into the electrode 25 through a pipe 26 and a valve
`16 by a pump 13, changes a temperature such that the
`monitoring temperature output from the temperature monitor
`24 to the controller 28 through the signal cable 23 coincides
`with a set temperature of the controller 28, and comes back to
`the refrigerant tank 7 through the pipe 27 and the valve 19.
`[0013] The temperature control is similarly performed using
`the primary cooling devices 2 and 3 with respect to the other
`refrigerant tanks 8 and 9. Pipes 5 and 6, temperature monitors
`11 and 12, pumps 14 and 15, and valves 17, 18, 20, and 21
`have the same functions as those of the refrigerant tank 7.
`[0014] The temperatures of the refrigerants in the refrigerant
`tanks 7, 8, and 9 are controlled by the primary cooling devices
`1, 2, and 3 to be temperatures A, B, and C set in advance by the
`controller 28.
`[0015] In a case where the electrode 25 needs the temperature
`A, the valves 16 and 19 are opened, and the refrigerant in the
`refrigerant tank 7 kept at the temperature A is transferred into
`the electrode 25 by the pump 13. In this case, the valves 17, 18,
`20, and 21 are closed, and the refrigerants in the refrigerant
`tanks 8 and 9 are not transferred into the electrode 25.
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`Page 3 of 5
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`[0016] In a case where the electrode 25 needs the temperature
`B, the valves 16 and 19 are instantly closed. Simultaneously, the
`valves 17 and 20 are opened, the refrigerant in the refrigerant
`tank 8 kept at the temperature B is transferred into the electrode
`25 by the pump 14. In this case, the valves 18 and 21 are closed,
`and the refrigerant in the refrigerant tank 9 is not transferred into
`the electrode 25. The time taken for changing the electrode 25
`from the temperature A to the temperature B is 2 to 10 seconds.
`[0017] Fig. 2 is a cross-sectional view illustrating an oxide film
`on a semiconductor substrate etched using a temperature control
`system of the invention.
`[0018] In Fig. 1, the refrigerants of the refrigerant tanks 7, 8,
`and 9 are set to, for example, -50ºC, -30ºC, and 0ºC,
`respectively. In the first step etching, the refrigerant of the
`refrigerant tank 7 is transferred to the electrode 25, the electrode
`25 is kept at -50ºC, and etching is performed.
`[0019] Similarly, etching is performed at -30℃ in the second
`step etching, and performed at 0℃ in the third step etching.
`[0020] As a result, an etching angle with respect to the surface
`of a semiconductor substrate 31 of an Si oxide film 30 can be
`controlled as illustrated in Fig. 2. The etching angles based on
`the first, second, and third step etching are about 60º, 80º, and
`90º, respectively.
`[0021]
`[Advantageous Effect of the Invention] As described above, in
`the invention, the plurality of refrigerant tanks that supply the
`refrigerant to the electrode, on which the semiconductor substrate
`is arranged, are provided, and the temperature control device that
`individually controls the temperature of each of the refrigerant
`tanks is provided. With this configuration, responsiveness to the
`temperature control of the electrode can be improved, and the
`temperature of the semiconductor substrate can be efficiently
`changed.
`
`Therefore, it is possible to arbitrarily control the etching angle
`of the etching target object on the semiconductor substrate with
`respect to the surface of the semiconductor substrate in the step
`etching, where the same semiconductor substrate is
`continuously etched based on different process conditions.
`[0022] In particular, a contact hole such as the contact hole of
`a super-LSI is effectively formed in a part with a small margin.
`
`[Brief Description of the Drawings]
`[Fig. 1] Fig. 1 is a diagram illustrating a configuration
`according to an embodiment of the invention.
`[Fig. 2] Fig. 2 is a cross-sectional view illustrating an etching
`target object on a semiconductor substrate, which is etched
`using a temperature control system of the invention.
`[Fig. 3] Fig. 3 is a diagram illustrating a configuration of a
`conventional temperature control system.
`
`[Reference Signs List]
`1, 2, 3: Primary cooling device
`4, 5, 6: Pipe
`7, 8, 9: Refrigerant tank
`10, 11, 12: Temperature monitor
`13, 14, 15: Pump
`16, 17, 18: Valve
`19, 20, 21: Valve
`22, 23: Signal cable
`24: Temperature sensor
`25: Electrode
`26, 27: Pipe
`28: Controller
`29: Semiconductor substrate
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`Page 4 of 5
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`FIG. 3
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`FIG. 2
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`FIG. 1
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`Page 5 of 5
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`Page 5 of 5
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