`
`October 2, 2006
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`PATENT APPLICATION
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`476 Green View Drive
`Walnut Creek, CA 94596-5459
`T 995.947.1909
`F 9259372754
`
`dlf@mtag.com
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`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`In re application of
`
`Daniel L. Flamm
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`Docket No: OAO301
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`Appln. No.: 10/439,245
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`Group Art Unit: 1765
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`Filed: 5/14/2003
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`Examiner: A. Alanko
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`AMENDMENT UNDER 37 C.F.R. § 1.111
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`MAIL STOP AMENDMENT
`Commissioner for Patents
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`PO. Box 1450
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`Alexandria, VA 22313-1450
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`Sir:
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`In response to the Office Action dated, June 1, 2006, please amend the above-identified
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`application as follows on the accompanying pages.
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`AMENDMENTS TO THE CLAIMS .............................................................................................. 2
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`TABLE OF CONTENTS
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`REMARKS .................................................................................................................................... 2 1
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`
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`us. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`AMENDMENTS TO THE CLAIMS
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`This listing of claims will replace all prior versions and listings of claims in the
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`application:
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`LISTING OF CLAIMS:
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`1.-55 (canceled)
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`56. (currently amended) A method of etching a substrate in the manufacture of a device,
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`the method comprising:
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`placing a substrate having a film thereon on a substrate holder in a chamber, the substrate
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`holder having a selected thermal mass;
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`setting the substrate holder to a selected first substrate holder temperature with a heat
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`transfer device;
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`etching a first portion of the film while the substrate holder is at the selected first
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`substrate holder temperature;
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`with the heat transfer device, changing the substrate holder temperature from the selected
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`first substrate holder temperature to a selected second substrate holder temperature; and
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`etching a second portion of the film while the substrate holder is at the selected second
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`substrate holder temperature;
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`
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`wherein the thermal mass of the substrate holder is selected for a predetermined
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`temperature change within a specified interval of time during processing; the predetermined
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`temperature change comprises the change from the selected first substrate holder temperature to
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`the selected second substrate holder temperature, and the specified time interval comprises the
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`time for changing from the selected first substrate holder temperature to the selected second
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`substrate holder temperature.
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`57. (currently amended) The method of claim 56 wherein the first-substrate—helder
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`temperature—is—ehangeéte—the—second substrate—helder—temperature—btheat—traasfer—means
`
`eeupled—te—t—he—substrate—helder portion of the film comprises a material composition that is
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`different from the material composition of the first portion of the film.
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`58. (currently amended) The method of claim 56 wherein the change from the first
`
`substrate holder temperature to the second substrate holder temperature is an in—situ process
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`during the first portion etching step and the second portion etching step.
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`59. (previously presenteafi The method of claim 56 wherein the etching of the first
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`portion of the film and the etching of the second portion of the film are conducted in a
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`substantially constant plasma environment.
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`60. (previously presented) The method of claim 56 wherein etching at least one of the
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`portions of the film comprises radiation.
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`61. (previously presented) The method of claim 56 wherein etching at least one of the
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`portions of the film is an ion bombardment aided process.
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`62. (previously presented) The method of claim 56 wherein:
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`a first substrate etching temperature corresponds to the first substrate holder temperature;
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`a second substrate etching temperature corresponds to the second substrate holder
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`temperature; and
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`the first and the second substrate etching temperatures are in a known relationship to the
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`first and the second substrate holder temperatures.
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`63. (previously presented) The method of claim 62 wherein the first etching temperature
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`is substantially the first substrate holder temperature and the second etching temperature is
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`substantially the second substrate holder temperature.
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`64. (previously presented) The method of claim 56 wherein:
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`a first substrate etching temperature corresponds to the first substrate holder temperature;
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`a second substrate etching temperature corresponds to the second substrate holder
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`temperature;
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`
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.2 OA0301
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`the first substrate etching temperature is higher than the second substrate etching
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`temperature; and
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`the first portion of the film is etched before the second portion of the film.
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`65. (previously presented) The method of claim 56 wherein:
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`a first substrate etching temperature corresponds to the first substrate holder temperature;
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`a second substrate etching temperature corresponds to the second substrate holder
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`temperature;
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`the first substrate etching temperature is lower than the second substrate etching
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`temperature; and
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`the first portion of the film is etched before the second portion of the film.
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`66. (previously presented) The method of claim 56 wherein the substrate holder
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`comprises an electrostatic support chuck having a surface for supporting a substrate in a reaction
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`chamber, the electrostatic support chuck overlays a heat exchange region, and the heat exchange
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`region includes at least one fluid passage through which a fluid can be circulated to heat and/or
`
`cool the substrate holder.
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`67. (previously presented) The method of claim 66 wherein the heat exchange region
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`includes at least two separate fluid passages, each fluid passage being configured to have an
`
`independent inlet and an independent outlet.
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`
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`U.S. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`68. (currently amended) The method of claim 56 wherein the substrate holder M
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`transfer device includes a plurality of heating elements.
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`69. (previously presented) The method of claim 68 wherein the heating elements are
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`configured to selectively heat one or more zones of the substrate holder.
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`70. (currently amended) A method of etching a substrate in the manufacture of a device,
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`the method comprising:
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`heating the a_substrate holder to a first substrate holder operating temperature with a heat
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`transfer device, the substrate holder having at least one temperature sensing unit,
`
`placing a substrate having a film thereon on a th_e substrate holder in a chamber;
`
`etching a first portion of the film at a selected first substrate temperature; and
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`etching a second portion of the film at a selected second substrate temperature, the
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`selected second substrate temperature being different from the selected first substrate
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`temperature;
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`wherein substrate temperature is changed from the selected first substrate temperature to
`
`the selected second substrate temperature, using a measured wafer temperature, within a
`
`preselected time interval for processing, and at least the first substrate temperature or the second
`
`substrate temperature, in single or in combination, is above room temperature. operating-the
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`
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`
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`71. (previously presented) The method of claim 70 wherein a continuous etching process
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`comprises etching the first portion of the film and etching the second portion of the film.
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`72. (currently amended) The method of claim 70 wherein the first—substrate-temperatu-re
`
` -- ' substrate
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`temperature change is by at least heat transfer with the substrate using at least an electrostatic
`
`chuck.
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`73. (currently amended) The method of claim 70 wherein the first—substrate-temperatu-re
`
`is—e-han-ged—te—the—seeead—substrate—temperature substrate temperature change is by transferring
`
`heat energy using at least a pressure of gas behind said substrate.
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`74. (currently amended) The method of claim 70 wherein said £12 first substrate
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`temperature is changed to the second substrate temperature by transferring energy using at least
`
`radiation.
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`
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`AMENDMENT UNDER 37 CPR. § 1.111
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`Atty. Docket No.: OA0301
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`US. Application No. 10/439,245
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`75. (previously presented) The method of claim 70 wherein changing the substrate
`
`temperature comprises selectively transferring energy in the form of heat from a substrate
`
`temperature control system to the substrate holder.
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`76. (previously presented) The method of claim 70 wherein changing the selected first
`
`substrate temperature to the selected second substrate temperature is an in-situ process while
`
`etching the first film portion and etching the second film portion.
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`77. (currently amended) The method of claim 70 wherein the etehi-n-g—ef—t-he first—portion
`
`e-f—the—film—aad-the—etehi-ng—ef the second portion of the film are—eondueted—i-n—a—subsmtial-l-y
`
`eenstant—plasma—enyi-rermnt comprises a material composition that is different from the material
`
`composition of the first portion of the film.
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`78. (previously presented) The method of claim 70 wherein etching at least one portion of
`
`the film comprises radiation.
`
`79. (previously presented) The method of claim 70 wherein etching at least one portion of
`
`the film comprises an ion bombardment aided process.
`
`
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`80. (currently amended) A method of processing a substrate during the manufacture of a
`
`device, the method comprising:
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`placing a substrate having a film thereon on a substrate holder within a chamber of a
`
`plasma discharge apparatus, the plasma discharge apparatus comprising; a—substrate—temperature
`
`season—a substrate temperature control system ineluding comprising a substrate temperature
`
`sensor and a substrate temperature control circuit operable to adjust the substrate temperature to
`
`a predetermined substrate temperature value with exeeute a first heat transfer process; and the
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`substrate—holder having a substrate holder temperature control system comprising a substrate
`
`holder temperature sensor and a substrate holder temperature control circuit operable to adjust
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`the substrate holder temperature to a predetermined substrate holder temperature value with a
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`second heat transfer process;
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`performing a first film treatment of a first portion of the film at a selected first substrate
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`temperature;
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`with the substrate temperature control circuit, changing from the selected first substrate
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`temperature to a selected second substrate temperature, the selected second substrate temperature
`
`being different from the selected first substrate temperature; and
`
`performing a second film treatment of a second portion of the film at the selected second
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`substrate temperature;
`
`
`
`
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`
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`wherein the substrate holder is heated above room temperature during at least one of the
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`first or the second film treatments, and the substrate temperature control circuit is operable to
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`change the substrate temperature from the selected first substrate temperature to the selected
`
`second substrate temperature within a preselected time period to process the film.
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`81. (currently amended) The method of claim 80 wherein the substrate temperature
`
`
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`control circuit system comprises the substrate holder temperature control circuit system.
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`82. (currently amended) The method of claim 80 wherein the substrate holder
`
`
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`temperature control circuit system comprises the substrate temperature control circuit system.
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`83. (previously presented ) The method of claim 80 wherein at least one film treatment,
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`selected from the first film treatment and the second film treatment, comprises the substrate
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`temperature being less than the substrate holder temperature.
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`84. (currently amended) The method of claim 80 wherein at—least—ene—film—treat—ment;
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`AMENDMENT UNDER 37 C.F.R. § 1.111
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`Atty. Docket No.: OA0301
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`US. Application No. 10/439,245
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`temperamre-being—greateethan—the—substrateheldeHemperatufe the second portion of the film
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`comprises a material composition that is different from the material composition of the first
`
`portion of the film.
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`85. (previously presented) The method of claim 80 wherein at least one film treatment,
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`selected from the first film treatment and the second film treatment, comprises selectively
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`transferring heat energy from the substrate holder to the substrate.
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`86. (previously presented ) The method of claim 80 wherein at least one film treatment,
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`selected from the first film treatment and the second film treatment, comprises selectively
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`transferring heat energy from the substrate to the substrate holder.
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`87. (previously presented) The method of claim 80 wherein at least one film treatment,
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`selected from the first film treatment and the second film treatment, comprises maintaining the
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`temperature of the substrate holder above room temperature and selectively transferring heat
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`energy from the substrate into the substrate holder.
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`88. (currently amended) The method of claim 80 wherein at least one film treatment,
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`selected from the first film treatment and the second film treatment, comprises selectively
`
`ll
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`
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`AMENDMENT UNDER 37 CPR. § 1.111
`US. Application No. 10/439,245
`
`Atty. Docket No.: OAO301
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`transferring energy in the form of heat frem—the—su-bstrate—temperature—eent-rel—sy-stem to the
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`substrate holder with the substrate temperature control circuit and maintaining the substrate
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`holder temperature above room temperature with the substrate holder control circuit.
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`89. (previously presented) The method of claim 80 wherein at least one film treatment,
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`selected from the first film treatment and the second film treatment, comprises etching.
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`90. (previously presented)rThe method of claim 80 wherein at least one film treatment,
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`selected from the first film treatment and the second film treatment, comprises chemical vapor
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`deposition.
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`91. (currently amended) The method of claim 80 wherein at least one film treatment
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`comprises maintaining the substrate temperature at a selected value from about 300 to 500
`
`degrees centigradeflfiéfimmsmmmfimdfihmm
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`assisted-preeess.
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`92. (previously presented)-The method of claim 80 wherein the first temperature is
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`changed to the second temperature by transferring heat using at least a pressure of gas behind the
`
`substrate.
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`12
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`93. (previously presented) The method of claim 80 wherein the first substrate temperature
`
`is changed to the second substrate temperature by transferring energy using at least radiation.
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`94. (currently amended) A method of processing a substrate in the manufacture of a
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`device, the method comprising:
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`placing a substrate having a film thereon on a substrate holder in a processing chamber;
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`the processing chamber comprising the substrate holder, a substrate control circuit operable to
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`adjust the substrate temperature eontrel—system—to—eentrel—the—temperature—ef—the—substrate, a
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`substrate holder temperature sensor, and a substrate holder control circuit operable to maintain
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`th_e substrate holder temperatureeenfieksysteaWentreHhe—temperatureefihe—sabsfiate
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`holder;
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`performing a first etching of a first portion of the film at a selected first substrate
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`temperature;
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`performing a second etching of a second portion of the film at a selected second
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`substrate temperature, the second temperature being different from the first temperature;
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`wherein at least one of the film portions is etched while heat is being transferred from—the
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`substrate-holder—eentrel—system to the substrate holder with the substrate holder control circuit
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`W; and
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`13
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`AMENDMENT UNDER 37 CPR. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`effee—t—uati-n-g—a the substrate temperature control circuit effectuates the change in—the
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`substrate-temperature from the first substrate temperature to the second substrate temperature
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`within a speei—fieel preselected time period. te—prec—ess—the—film:
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`95. (previously presented) The method of claim 94 wherein the etching of at least one of
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`the film portions comprises heat flow from the substrate holder into the substrate.
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`96. (previously presented) The method of claim 94 wherein the etching of at least one of
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`the film portions comprises heat flow from the substrate into the substrate holder.
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`97. (previously presented) The method of claim 94 wherein the etching of at least one of
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`the film portions comprises maintaining the temperature of the substrate in the range of 50°C to
`
`100°C.
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`98. (currently amended) The method of claim 94 wherein the preselected eharaeteristie
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`time period to change from the first substrate temperature to the second substrate temperature
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`subtends less than about 5 percent of the 2_1 total etching process time.
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`14
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`99. (cancellezD The method of claim 94 wherein the characteristic time period to change
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`from the first substrate temperature to the second substrate temperature subtends less than 15
`
`percent of the total etching process time.
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`100. (currently amended) A method for processing layers which are included in a stack of
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`layers positioned on a substrate, the method comprising:
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`placing the substrate on a substrate holder;
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`sensing a substrate holder temperature,
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`etching at least a portion of a first silicon-containing layer in a chamber while the
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`substrate is maintained at a selected first substrate temperature; and
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`etching at least a portion of a second silicon—containing layer in the chamber while the
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`substrate is maintained at a selected second substrate temperature;
`
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`wherein the substrate holder temperature is heated t_o maintained-abwe a temperature
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`suffieient—te allew eeatrel—ling operable to maintain at least one of the selected first and the
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`selected second substrate temperatures above 49°C, and
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`the-ehange the substrate temperature is changed from the first substrate temperature to the
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`second substrate temperature eeeurs—in—a—eentrel-led—mannefi with a control circuit operable to
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`effectuate the changing within a preselected seleeted time period that is less than the overall
`
`15
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`AMENDMENT UNDER 37 C.F.R. § 1.111
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`Atty. Docket No.: OA0301
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`US. Application No. 10/439,245
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`process time associated with the etching the first silicon~containing layer and the second silicon—
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`containing layer.
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`101. (previously presented) The method of claim 100 wherein the change from the first
`
`substrate temperature to the second substrate temperature occurs within less than about 5 percent
`
`of the total etching process time.
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`102. (previously presented) The method of claim 100 wherein at least one layer is etched
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`in a chlorine-containing ambient.
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`103. (currently amended) The method of claim 100 wherein at least one silicon-
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`containing layer is etched in a chlorine-containing ambient;
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`the first layer is a polysilicon layer, the second layer is a silicide layer and the stack
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`includes an oxide layer;
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`the second substrate temperature is higher than the first substrate temperature; and
`
`1
`
`El
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`1‘
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`II'Il" I
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`'11
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`.
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`a portion of at least one layer is selectively etched relative to the oxide layer.
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`16
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`AMENDMENT UNDER 37 CPR. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`104. (currently amended) A method for manufacturing a device comprising an integrated circuit,
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`the method comprising:
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`transferring a substrate comprising a stack of layers including a silicide layer into a
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`chamber, the chamber comprising a substrate holder;
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`sensing the substrate holder temperature;
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`heating the substrate holder with a substrate holder control circuit and a heating device to
`
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`maintain a thesubstrate holder at_a temperature that is operable to plaee effectuate the a substrate
`
`temperature above room temperature while processing the substrate;
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`processing the substrate in—the—ehamber on the substrate holder at a first substrate
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`temperature; and
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`processing the substrate-in—t—he—ehamber on the substrate holder at a second substrate
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`temperature to etch at least a portion of the silicide layer;
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`wherein the first substrate temperature is different from the second substrate temperature
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`and the first substrate temperature is changed to the second substrate temperature with a substrate
`
`temperature control circuit within a preselected time to etch the silicide layer.
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`17
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`
`Atty. Docket No.: OA0301
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`US. Application No. 10/439,245
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`
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`105. (cancelled) The method of claim 104 where the first substrate temperature is less
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`than about 90 degrees centigrade and the silicide layer is etched above about 99 degrees
`
`centigrade.
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`106. (previously presented) The method of claim 104 wherein the first substrate
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`temperature is changed to the second substrate temperature within a selected period of time by at
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`least heat transfer to the substrate using at least an electrostatic chuck.
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`107. (previously presented) The method of claim 104 wherein the first substrate
`
`temperature is changed to the second substrate temperature by transferring heat using at least a
`
`pressure of gas behind the substrate.
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`18
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`
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`AMENDMENT UNDER 37 CPR. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`108. (previously presented) The method of claim 104 wherein the first substrate
`
`temperature is changed to the second substrate temperature by transferring energy using at least
`
`radiation.
`
`109. (currently amended) The method of claim 56 wherein the substrate-helder—is—set—te
`
`
`
`second portion of the film comprises a material composition different from the first portion of
`
`
`the film.
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`110. (currently amended) The method of claim 56 wherein the change from the first
`
`substrate holder temperature to the second substrate holder temperature is effectuated with a
`
`control circuitWM.
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`111. (previously presented) The method of claim 56 wherein the substrate holder reaches
`
`the second substrate holder temperature at approximately a selected time.
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`112. (currently amended) The method of claim 70 wherein the first substrate holder
`
`operating temperature is above room temperature.
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`113. (currently amended) The method of claim 80 wherein maintai-ning—the—substrate
`
`
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`defieeat least one film treatment comprises transferring energy from the substrate holder with a
`
`heat transfer device.
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`19
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`114. (currently amended) The method of claim 94 wherein the second portion of the film
`
`comprises a material composition different from the first portion of the film—ehange—fsemthe—fi-Est
`
`
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`115. (currently amended) The method of claim 94 wherein the substrate reaehes
`
`temperature is the second substrate temperature at approximately a selected time.
`
`116. (currently amended) The method of claim 104 comprising processing the substrate
`
`while maintaining the substrate temperature at a selected value within 180 to 220 degrees
`
` centigrade.
`~-
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`
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`117. (currently amended) The method of claim 104 comprising processing the substrate
`
`while maintaining the substrate temperature at a selected value within 50 to 100 degrees
`
` centigrade.
`-
`-- -- -
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`tenaperature—eeeues—in—a—eentrelled—memer:
`
`20
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`REMARKS
`
`Applicant thanks the Examiner for graciously granting an interview and taking the time
`
`to provide helpful explanations and suggestions.
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`Prior to this amendment Claims 56-98, 100-104, 106-117 were pending. Claims 1-55, 99
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`and 105 were previously cancelled.
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`Claims 56, 58, 68, 70, 72-74, 77, 80-82, 84, 88, 91, 94, 98-101, 103-105, 109, 110, and
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`112-117 are currently amended pursuant to examiner’s guidance.
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`The Office Action objected to the specification as failing to provide antecedent basis for
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`claims 100 and 109 and it rejected claim 109 under 35 U.S.C. 251. By this amendment these
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`objections and the 35 U.S.C. 251 rejection are mooted.
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`Claims 99 and 105 are cancelled. The claim identifiers were in error and have been
`
`corrected.
`
`Claims 57, 63, 68 and 103 were rejected under 35 U.S.C. 112.
`
`Claims 56-62, 64, 70-71, 74-79, 109-112, and 114 were rejected under 35 U.S.C. 102(b)
`
`as being as being anticipated by JP 59-076876.
`
`Claims 70—82, 84—96, 98 and 113—1 15 were rejected under 35 U.S.C. 102(b) as being
`
`anticipated by Tsubone et al (US 5,320,982).
`
`Claims 97-98, 100-104, 106-108 and 116-117 were rejected under 25 U.S.C. 103(a) as
`
`being unpatentable over Tsubone et al. (US 5,230,982) in view of Shin et al. (US 6,087,264).
`
`Claims 83 and 112 were rejected under 35 U.S.C. 103(a) as being unpatentable over Tsubone et
`
`al. (US 5,320,982) in view of Shin ct al. (US 6,087,264) and Olson et al. (US 5,705,433).
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`21
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`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
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`Atty. Docket No.: OA0301
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`Claims 63, 65, 66—69 and 72-73 were rejected under 35 U.S.C. 103(a) as being
`
`unpatentable over JP 59—076876 in View of Rossman et al. (US 6,077,357).
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`Claims 80-89, 91, 97-98, 100-104, 108, 113 and 116-117 were rejected under 35 U.S.C.
`
`103(a) as being unpatentable over JP 59—076876 in view of Shin et al (US 6,087,264).
`
`Claims 90, 92-93 and 106-17 were rejected under 35 U.S.C. 103(a) as being unpatentable
`
`over JP 59-076876 in View of Shin et al. (US 6087264) and Rossman et al (US (6,077,357).
`
`The amendments in Claims 56, 58, 68, 70, 72-74, 77, 80-82, 84, 88, 91, 94, 98-101, 103-
`
`105, 109, 110, and 112-117 are believed to cure the issues raised by the examiner according to
`
`the responses below.. No new matter has been added.
`
`Hence Claims 56-98, 100-104, 106-117 are pending in this application. No new matter is
`
`added.
`
`1. Claim 56 Is Not Anticipated by JP 59-076876 Under 35 U.S.C. 102(b) Because by JP 59-
`
`076876 Does Not Teach All of the Limitations.
`
`At least, JP 59-076876 does not teach the limitations of setting the substrate holder to a
`
`selected first temperature, selecting a thermal mass of the substrate holder for a predetermined
`
`temperature change within a specified interval of time during processing, and a specified time
`
`interval comprising the time for changing from the selected first substrate holder temperature to
`
`the selected second substrate holder temperature.
`
`JP 59-076876 (FIG. 4) merely teaches controlling temperature of two heat transfer fluid
`
`reservoirs with controllers at 21 and 22 (to 30C and 60C respectively in the disclosed
`
`22
`
`
`
`AMENDMENT UNDER 37 CPR. § 1.111
`US. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`embodiment), not setting the temperature of the substrate holder (electrode) itself to a selected
`
`first temperature.
`
`The heating in FIG. 4 of JP 59-076876 is by a fluid. Two fluids are for the temperature
`
`of the electrode 19. JP59-O7686 teaches to change electrode temperature by operating the three
`
`way cocks 23 and 24 (p. 5, line 22) to divert one fluid, having a controlled temperature at a
`
`reservoir, into the electrode (FIG. 4 clearly shows the arrangement corresponding to the “rough”
`
`translated text at page 5, lines 13-15).
`
`The actual temperature of the electrode 19 in FIG 4 is inherently determined by various
`
`uncontrolled heat inputs and losses, including from heat transfer while flowing one fluid from
`
`one of the reservoirs to the electrode (FIG. 4 shows the arrangement corresponding to the rough
`
`translation at page 5, lines 13-15). Therefore, the controllers (control circuits) disclosed by JP
`
`59-076876 are not operable for the substrate holder (electrode) temperature itself or for the
`
`substrate temperature.
`
`That the translation is crude and must be selectively read with caution as is apparent from
`
`the very beginning of the Detailed Description on p2. Merely by way of example, on page 2 the
`
`terms (1) “overhanging effect” (lines 9-10), “M0C15 seems to be used as a main component”
`
`(lines 17-18), “temperature dependability” (line 19) and “steam pressure” (line 19) are all poorly
`
`translated or mistranslated. Applicant submits that it would be obvious to one of ordinary skill in
`
`the art that “overhanging effect” refers to undercutting, that reference is to MoCls as a reaction
`
`product, that a large temperature dependence is meant, and that line 19 refers to vapor pressure.
`
`23
`
`
`
`AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`II. Claim 70 Is Not Anticipated by Tsubone under 35 U.S.C. 102(b) At Least Because
`
`Tsubone Does not Teach all of the Claim Limitations.
`
`Tsubone does not teach heating the substrate holder with a heat transfer device or a
`
`substrate holder having at least one temperature sensing unit. Tsubone teaches cooling a
`
`substrate holder, not heating it.
`
`Using a heat transfer medium is not heating. The paragraph cited by the examiner
`
`beginning at col. 3, line 65 is about circulating a cooling medium (lines 65, 67). C014 line 1-2
`
`makes reference to this as a “circulated heat [transfer] medium” (bracketed term inserted) as
`
`evidenced by the construction and language immediately preceding and following (“the heat
`
`transfer gas” at col 4: line 5, 8, 11, et seq.). Hence the referenced paragraphs merely disclose
`
`circulating the medium through the sample bed.
`
`Tsubone discloses cooling the substrate holder, not heating it. For example, at col. 2
`
`lines 40-42 and col. 4, lines 52—54, Tsubone teaches that the sample bed is cooled by a cooling
`
`medium. Tsubone teaches this further at col. 5, lines 27-31 and col. 6, lines 2-3. Moreover,
`
`Tsubone teaches that when the substrate is slightly above room temperature at (region i-j)
`
`“control is made in the same way as c—d (col. 8, lines 66-68; e. g. as Case I where the sample is
`
`cooled to a predetermined temperature lower than room temperature - col. 8, lines 35-37). Hence
`
`Tsubone teaches cooling the substrate holder for substrate temperature to be [slightly] above
`
`room temperature.
`
`24
`
`
`
`AMENDMENT UNDER 37 CPR. § 1.111
`US. Application No. 10/439,245
`
`Atty. Docket No.: 0A0301
`
`III. Claim 80 Is Not Anticipated by Tsubone under 35 U.S.C. 102(b) Because Tsubone Does
`
`not Teach All of the Limitations
`
`At least, Tsubone fails to disclose a plasma discharge apparatus having a substrate holder
`
`temperature sensor, a control circuit operable to adjust the substrate holder to a predetermined
`
`substrate holder temperature, and heating a substrate holder above room temperature during at
`
`least one film treatment.
`
`Tsubone does not teach sensing the temperature of a substrate holder, heating a substrate
`
`holder or a system for adjusting the temperature of a substrate holder to a predetermined
`
`substrate holder temperature value. Tsubone merely discloses a predetermined temperature of a
`
`heat medium before it is sent to the sample bed (col 4, lines 1-3, col. 5, lines 29).and pipes 10 in
`
`FIG. 1). Tsubones does not teach adjusting a predetermined temperature of the sample bed.
`
`Only the cooling medium is determined, and held at a static temperature of ~6OC in an
`
`embodiment.
`
`IV. Claim 80 is Not Made Unpatentable by Any COmbination of JP 59-076876, Shin or
`
`Tsubone Under 35 U.S.C. § 103(a) Because No Combination of These References Disclose
`
`or Suggest All of the Claim Limitations; Furthermore There is No Suggestion or
`
`Motivation to Combine JP 59-076876 or Tsubone with Shin.
`
`There is nothing in Tsubone, JP59-076876 or Shin, alone or in combination to suggest a
`
`substrate holder temperature sensor, a substrate holder control circuit operable for adjusting the
`
`substrate holder to a predetermined substrate holder temperature, and heating the substrate holder
`
`above room temperature for performing one of two film treatment steps. As well there is
`
`25
`
`
`
`. AMENDMENT UNDER 37 C.F.R. § 1.111
`US. Application No. 10/439,245
`
`Atty. Docket No.: OA0301
`
`nothing in any combination of Tsubone, JP59—O76876, or Shin, to suggest changing from a
`
`selected first substrate temperature to a selected second substrate temperature within a
`
`preselected time period with the substrate holder maintained above room temperature during at
`
`least one of the steps.
`
`Examiner references mention of a controller in JP-O76876. However, as pointed out in
`
`(1) above, JP 59—076876 only discloses two controllers that are for controlling the static
`
`temperature of two heat transfer fluid reservoirs, numerals 21 and 22 in FI
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