CERTIFICATION
`
`I, Naoko UNO, ·c/o Sakai International Patent Office, SF, Toranomon Mitsui Building 8-1,
`
`Kasumigaseki 3-chome, Chiyoda-ku, Tokyo, 100-0013, Japan, do hereby certify that I am fluent in the
`
`English and Japanese languages and a competent translator thereof, and that to the best of my
`
`knowledge and belief the following is a true and correct translation of the accompanying Non-English
`
`Language Japanese Patent Application Laid-Open Publication No. JP03-145123 A.
`
`I certify under pena lty of perjury under the laws of the United Stat es that the foregoing is true
`and correct.
`
`~.
`;:
`
`Executed this 20th day of January, 2017.
`
`· _· _· ._· _i_.,(,,,._v_· __ {_~-----(cid:173)
`Signature:_~_
`
`Naoko Uno
`
`(cid:55)(cid:82)(cid:78)(cid:92)(cid:82)(cid:3)(cid:40)(cid:79)(cid:72)(cid:70)(cid:87)(cid:85)(cid:82)(cid:81)(cid:3)(cid:47)(cid:76)(cid:80)(cid:76)(cid:87)(cid:72)(cid:71)
`(cid:40)(cid:59)(cid:43)(cid:44)(cid:37)(cid:44)(cid:55)(cid:3)(cid:20)(cid:19)(cid:20)(cid:21)
`(cid:44)(cid:51)(cid:53)(cid:3)(cid:51)(cid:72)(cid:87)(cid:76)(cid:87)(cid:76)(cid:82)(cid:81)(cid:3)(cid:73)(cid:82)(cid:85)
`(cid:56)(cid:17)(cid:54)(cid:17)(cid:3)(cid:51)(cid:68)(cid:87)(cid:72)(cid:81)(cid:87)(cid:3)(cid:49)(cid:82)(cid:17)(cid:3)(cid:53)(cid:40)(cid:23)(cid:19)(cid:15)(cid:21)(cid:25)(cid:23)
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` Page 1 of 7
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`(19) JAPAN PATENT OFFICE (JP)
`
`(12) PATENT APPLICATION
`LAID-OPEN PUBLICATION (A)
`
`(11) PUBLICATION NUMBER
`JP H03-145123 A
`
`(51) Int.Cl5
`H01L 21/285
` 21/205
` 21/26
` 21/302
` 21/31
` 21/324
`
`IDENTIFICATION CODE: JPO REFERENCE NUMBER
`C
`7738-5F
`7739-5F
`7738-5F
`8122-5F
`6940-5F
`7738-5F
`
`L
`B
`C
`D
`
`(43) PUBLICATION 20. 6.
`1991 (H3)
`
`Request for Examination: Not Filed Number of Claims: 2 (6 pages total)
`(54) Title of the Invention SEMICONDUCTOR MANUFACTURING DEVICE
`(21) Japanese Patent Application No. H1-283733
`(22) Filing Date: 31. 10. 1989 (H1)
`(72) Inventor: Shigehiko KAJI
`c/o Toshiba Corp. Research Institute, 1 Komukaitoshiba-cho, Saiwai-ku,
`Kawasaki-shi, Kanagawa
`(71) Applicant: Toshiba Corp.
`72 Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa
`(74) Representative: Patent Attorney Takehiko SUZUE and three others
`
`Description
`1. Title of the Invention
`Semiconductor Manufacturing Device
`
`3. Detailed Description of the Invention
`[Purpose of the invention]
` (Industrial Applicability)
`[0001]
` The present invention relates to a semiconductor
`2. Claim(s)
`manufacturing device that is used for forming a thin film,
`(1) A semiconductor manufacturing device, which heats or
`etching, or the like, and in particular relates to a
`cools a substrate placed inside a vessel to maintain the
`semiconductor manufacturing device which has a
`temperature of the substrate at a specified temperature,
`function for controlling the temperature of a substrate by
`and in this condition performs a specified process on the
`heating and cooling the substrate.
`substrate, characterized in that the semiconductor
` (Description of the Prior Art)
`manufacturing device comprises:
`[0002]
` With the shift to a higher integration of the
` a first temperature control mechanism provided in
`semiconductor devices, regarding thin film forming
`contact with the rear surface of the substrate and heats or
`technology and etching technology which are used in the
`cools the substrate by at least thermal conduction, and
`manufacturing of the same, there is an emerging need to
` a second temperature control mechanism that heats the
`accurately control the reactions on the substrate. Further,
`substrate by radiant heat from the front surface side of the
`the substrate diameter is increasing and due to this, there
`substrate.
`is a shift from semiconductor manufacturing devices
`performing batch processing, which processes multiple
`sheets of substrates at once, to semiconductor
`manufacturing devices using batch processing that
`processes a smaller number of substrates at once, and
`even to semiconductor manufacturing devices performing
`single substrate processing.
`[0003]
` In this way, due to the decrease in the number of
`substrates that can be processed in one operation, the
`problem of a decreased throughput (the number of
`substrates per unit time on which thin films are formed)
`arises.
`
`(2) A semiconductor manufacturing device according to
`claim 1, characterized in that the first temperature control
`mechanism is a heater that is heated by electric conduction
`or a heat exchanger that is heated or cooled by heat
`exchange with a fluid, and the second temperature control
`mechanism is an infrared lamp.
`
`Page 2 of 7
`
`

`

`For example, with the decrease of the number of
`substrates that can be processed in one thin film forming
`operation, more time is required for the thin film forming
`operation per substrate, and the throughput decreases. One
`reason for the throughput decrease is the increased time
`required for heating and stabilizing the temperature of the
`substrate. In the batch processing, one heating and
`temperature stabilization operation was sufficient for
`dozens of substrates, while in the single substrate
`processing, this operation is done for each substrate.
`[0004]
` For example, when forming a tungsten film on the
`substrate using the tungsten selective CVD, a cold-wall
`type device performing a single substrate processing is
`generally used, in which a raw material gas is fed into the
`chamber equipped with a heating mechanism for heating a
`single substrate. In this case, as means for heating the
`substrate, a hot plate as shown in Fig.5 (a) which mainly
`uses heat conduction is employed to heat the substrate
`from its rear surface side, or an infrared lamp as shown in
`Fig.5 (b) is used which heats the substrate from its front
`surface side using radiant heat. In Fig. 5, 1 is the substrate,
`2 is the hot plate, 3 is the infrared lamp, 4 is a stage, 5 is a
`transparent window, and 6 is a reflector.
`
`[0005]
` Film forming is performed at substrate temperature of
`200(cid:16882)400°C. When the hot plate is used for heating, the
`substrate temperature can be accurately controlled within
`the temperature range of room temperature to 300°C.
`However, as a hot plate generally has a large heat
`capacity it requires more time for the temperature to rise
`and fall, and its disadvantage is that it is difficult to
`stabilize the substrate temperature in a short time by
`changing its output. Furthermore, it is also difficult to
`effectively achieve a high substrate temperature of 400°C
`or more. On the other hand, when the infrared lamp is
`employed, it is possible to rapidly raise the substrate
`temperature, but it is difficult to control the substrate
`temperature within a temperature range below 400°C,
`and the disadvantage is that it takes time to stabilize the
`substrate temperature.
`[0006]
` Thus, with the semiconductor manufacturing device
`which performs single substrate processing, if only one
`method is employed for heating the substrate, it takes
`time to raise or stabilize the substrate temperature and
`causes a further decreased throughput.
`
`[Configuration of the Invention]
`[0007]
` On the other hand, when etching is performed, since
` (Means for solving problem)
`there is now a need to more accurately control the etched
` The gist of the present invention lies in that multiple
`[0010]
`shape, substrate temperature is controlled to or below
`heating methods, not a single heating method, are
`room temperature. For example, by using CFC
`employed to rapidly increase and stabilize the substrate
`(chlorofluorocarbons) gas or the like, temperature is
`temperature.
`controlled at around minus several tens degrees (°C).
` Therefore, the present invention relates to a
`[0011]
`However, while it is easy to control the temperature so
`semiconductor manufacturing device, which heats or
`that the substrate is sufficiently below the room
`cools a substrate placed inside a vessel to maintain the
`temperature, it is difficult to control the temperature so
`temperature of the substrate at a specified temperature,
`that the substrate is at around the room temperature to
`and in this condition performs a specified process on the
`increase the etching speed.
`substrate, characterized in that the semiconductor
` (Problem to be solved by the invention)
`manufacturing device comprises:
`[0008]
` Thus, conventionally, when the substrate is heated
`a first temperature control mechanism provided in
`from one side by a single heating method, there are
`contact with the rear surface of the substrate and heats or
`problems that it took time to increase or stabilize the
`cools the substrate by at least thermal conduction (for
`temperature of the substrate, the processing time required
`example, a heater that is heated by electric conduction or
`for one substrate increased, and the throughput decreased.
`a heat exchanger that is heated or cooled by heat
`Furthermore, it was extremely difficult to control the
`exchange with a fluid), and a second temperature control
`temperature to maintain the substrate temperature at
`mechanism that heats the substrate by radiant heat from
`around the room temperature.
`the front surface side of the substrate (for example, an
` The present invention is made in consideration of the
`[0009]
`infrared lamp).
`above, and an object of the present invention is to provide
` (Function)
`a semiconductor manufacturing device that can quickly
`[0012]
` According to the present invention, by using a heater
`increase and stabilize the substrate temperature and can
`or a heat exchanger or the like as the first temperature
`contribute, for example, to increase the throughput.
`control mechanism, the substrate can be heated or cooled
`by thermal conduction and good substrate temperature
`control characteristics can be achieved at the room
`temperature to 300°C.
`
`Page 3 of 7
`
`

`

`Further, by using an infrared lamp or the like as the
`second temperature control mechanism, while the
`substrate temperature control characteristic at a low
`temperature is poorer, the substrate can be heated rapidly.
`Additionally, by using the first and second temperature
`control mechanisms in combination, it is possible to
`increase and stabilize the substrate temperature in short
`time.
` While a heater and a heat exchanger using thermal
`[0013]
`conduction generally have a large heat capacity and
`temperature stabilization is easy, rapid heating and
`cooling is difficult. It is particularly difficult to heat to a
`high temperature. On the contrary, an infrared lamp that
`uses radiant heat generally has a small heat capacity and
`while rapid heating and cooling is easy, it is difficult to
`stabilize the temperature. It is particularly difficult to
`stabilize at a low temperature. In the present invention, by
`using two types of heating means together, for example,
`by rapidly increasing the temperature using the infrared
`lamp and stabilizing the temperature after heating using a
`heater or heat exchanger, it is possible to heat the
`substrate in a short amount of time to a specified
`temperature and to stabilize at this temperature.
`
` (Embodiments)
`[0014]
` The examples of the present invention will be
`described with reference to the figures.
` Fig. 1 is a sectional view illustrating a schematic
`[0015]
`structure of a semiconductor manufacturing device
`according to a first embodiment of the present invention.
`In the first embodiment, th semiconductor manufacturing
`device is a thin film forming device. In the drawing, 10
`is a vacuum vessel, and a specified gas is fed into the
`vessel 10 from a gas introduction port, and a gas inside
`the vessel 10 is exhausted from an exhaust port. The first
`temperature control mechanism 30, serving also as the
`stage where the substrate 20 such as an Si wafer is
`mounted, is provided on the bottom part of the vessel 10,
`and the second temperature control mechanism 40 is
`provided on the upper part of the vessel 10.
` The first temperature control mechanism 30 includes a
`[0016]
`heater 31 having an electrode 32 equipped on the upper
`part as an electrostatic chuck, and heats the substrate 20
`from the rear surface side with the thermal conduction.
`The second temperature control mechanism 40 includes
`an infrared lamp 41, a quartz window 42 and a reflector
`43, and heats the substrate 20 from the front surface side
`with radiant heat.
`
`Furthermore, a thermocouple 33, which measures the
`temperature of the substrate 20, is provided inside the
`temperature control mechanism 30. According to the
`temperature detected by the thermocouple 33, the output
`of the heater 31 and the infrared lamp 41 is controlled. It
`is desirable that the thermocouple 33 is in direct contact
`with the substrate 20, but it is acceptable if it is provided
`near either the heater 31 or the infrared lamp 41 or both,
`can calibrate with the substrate temperature, and can
`control the output of either the heater 31 or the infrared
`lamp 41.
`[0017]
` Next, a thin film forming method using the above
`device will be described. Here, for the heater 31 of the
`first temperature control mechanism 30, a hot plate
`(maximum output 1kW) including a tungsten wire
`enclosed inside an alumina ceramic and sintered is used,
`and for the infrared lamp 41 of the second temperature
`control mechanism 40, a 600W halogen lamp is used. As
`for the gas fed into the vessel 10, WF6, SiH4 and H2 are
`used.
`
`[0018]
` First, while the air is exhausted from the vessel 10 to
`make the internal pressure 1mTorr or less, the substrate
`20 is carried onto the hot plate 31 whose output is
`maintained at a constant level. Thereafter, the halogen
`lamp 41 is lit and more heat energy is provided to the
`substrate 20 to rapidly increase the temperature of the
`substrate 20. When the substrate 20 approaches the
`specified temperature, the output of the halogen lamp 41
`is decreased, and the substrate 20 is heated mainly with
`the hot plate 31. Then in this condition, gas is fed to the
`vessel 10, and a thin tungsten film is deposited by
`tungsten selective CVD.
`[0019]
` Fig. 2 (a) shows the relation of the hot plate, halogen
`lamp output, and the substrate temperature. The hot plate
`31 is controlled to a constant output of 300W wherein the
`substrate temperature rises to 300°C when heated by the
`hot plate 31 alone. When the substrate 20 of the room
`temperature is carried in, the output of the halogen lamp
`is simultaneously set to the maximum of 600W and the
`halogen lamp heats the substrate 20 together with the hot
`plate 31. When the substrate temperature reaches 290°C,
`the output of the halogen lamp is decreased and
`eventually made zero.
`
`Page 4 of 7
`
`

`

`[0020]
` In this case, the substrate temperature is stabilized at
`300°C in 2 minutes. In comparison, with the hot plate
`alone with a constant output of 300W, it required 15
`minutes before the temperature is stabilized at 300°C, and
`with the halogen lamp alone it required 5 minutes before
`the temperature is stabilized at 300°C. In this way,
`according to the embodiment, it is possible to increase the
`substrate temperature in a short time. In the above, the
`substrate temperature is measured by a thermocouple (not
`shown in figure) fixed on the substrate surface separate
`from the thermocouple 33 for temperature control, and the
`following substrate temperatures were measured in the
`same way.
`[0021]
` According to the embodiment, by using the hot plate
`31 to heat the substrate 20 by thermal conduction from the
`rear surface side, and by using halogen lamp 41 to heat the
`substrate 20 by radiation from the front surface side, the
`substrate 20 can be heated to a specified temperature in a
`short time, and the substrate can also be held stable at that
`temperature. Therefore, the time required to process the
`substrate 20 in thin film forming can be shortened and the
`throughput can be increased. This is a significant effect on
`a single substrate processing device.
`
`[0022]
` Furthermore, in the embodiment, in addition to the
`throughput increase due to the shortened heating and
`temperature stability time, since the quartz window 42 is
`not heated while the tungsten is deposited, tungsten
`adhesion on the quartz window 42 rarely occurred, which
`further provides an effect of controlling debris
`production. In addition, after the tungsten deposition, if
`heating process at or above deposit temperature is
`continuously performed in order to increase adhesion,
`heating by the halogen lamp 41 and the hot plate 31 can
`be performed simultaneously after the tungsten
`deposition as shown in Fig. 2(b). Further, if the
`electrostatic chuck 32 is not used, the effect of the
`thermal conduction decreases. Hence, it was necessary to
`increase the output of the hot plate by 50% for the
`substrate temperature (to be) 300°C. In short, the heating
`effect was increased by using the electrostatic chuck 32.
` With respect to the hot plate 31, as long as the face of
`[0023]
`the jig where the substrate is placed is heated, the jig may
`be heated with a heating element using Joule heat, such
`as silicon carbide and graphite, or may be heated by
`infrared lamp, such as halogen, that uses radiation.
`
` The reason the output of the hot plate 31 is kept constant
`is because its heat capacity is large and it is difficult to
`change the temperature in a short amount of time.
`However, the output of the hot plate 31 can be changed if
`there is a waiting period such as during the substrate carry
`or gas exhaustion, and if it is at the range wherein the hot
`plate 31 surface temperature will revert back to the
`specified temperature by forced cooling.
` Fig. 3 is a sectional view illustrating a schematic
`[0024]
`structure of a semiconductor manufacturing device
`according to another embodiment of the present invention;
`in this embodiment, an etching device is described. It
`should be noted that parts that are the same as Fig. 1 are
`denoted by the same symbols and detailed descriptions
`thereof will be omitted.
`[0025]
` In this embodiment, a heat exchanger 34 is used
`instead of the hot plate 31 as the first temperature control
`mechanism 30, and halogen lamp 41 is used as the second
`temperature control mechanism 40 as in the previous
`embodiment.
`
`The following is an example of maintaining the substrate
`temperature at around the room temperature by
`performing substrate cooling by the heat exchanger 34
`and heating by the halogen lamp 41 at the same time.
`Additionally, in this embodiment, RIE was performed by
`magnetron electric discharge, but the magnet and the
`electrode for the magnetron electric discharge are not
`shown in the drawing.
`[0026]
` First, 5°C cooling water with a flow rate of 1L/minute
`is fed into the heat exchanger 34 and the substrate 20 is
`cooled. At the same time, the output of the halogen lamp
`41 is changed to 0(cid:16882)400W and the substrate 20 is heated.
`With this, in the range of substrate temperature of 15 to
`150°C, the substrate temperature was controlled to the
`specified temperature within 3 minutes. By forcefully
`performing cooling and heating and increasing the heat
`transfer amount, the substrate temperature was controlled
`rapidly even at around the room temperature. In contrast,
`when heating is performed only by a heat exchanger or a
`halogen lamp and the temperature is controlled at around
`the room temperature, if the substrate is overheated, the
`temperature difference with its surroundings is small and
`the heat transfer amount is small, so it is difficult to lower
`the temperature. Furthermore, in order not to overheat, it
`is necessary to heat while accurately controlling the
`temperature, and it took more than ten minutes for
`temperature control.
`
`Page 5 of 7
`
`

`

`[0027]
` In this embodiment, by combining the halogen lamp 41
`and the heat exchanger 34 whose surface temperature is
`made low by fluids with a melting point lower than 0°C
`such as organic solvents, e.g., ethanol, methanol, acetone,
`or the like, or Freon type gas or the like, the temperature
`of the substrate can be controlled down to minus several
`tens of degrees (°C). This has an advantageous effect in
`etching process as described below.
`[0028]
` When the tungsten silicide and polysilicon of the
`tungsten silicide /polysilicon/SiO2 laminate film is etched
`to form a polycide gate, traditionally in order to obtain the
`selection ratio of the polysilicon and SiO2, etching speed
`was sacrificed and etching was performed at (cid:16882)10°C using
`a heat exchanger (cooling equipment) that was cooled
`with Freon gas. However, when the present embodiment is
`applied, it is easy to perform substrate temperature control
`as shown in Fig. 4, and tungsten silicide can be etched at a
`high speed at 20°C, and polysilicon can be etched at a
`high selection ratio at (cid:16882)10°C.
`
` Therefore, after the substrate is carried in, the
`[0029]
`substrate temperature is set to 20°C by cooling with the
`heat exchanger 34 and heating with the halogen lamp 41,
`and a part of the tungsten silicide and polysilicon is
`etched. Thereafter, etching is temporarily halted, the
`output of the heat exchanger 34 is increased and the
`substrate 20 is cooled. In the middle of the cooling,
`heating is restarted with the halogen lamp 41 and the
`temperature is stabilized at (cid:16882) 10°C, and the polysilicon is
`etched at a high selection rate. The etching conditions
`other than the temperature were as follows: SiCl4
`20cc/minute, Cl2 80 cc/minute, pressure 4 Pa, magnetron
`RIE with RF output 150W. By etching the tungsten
`silicide at 20°C rather than (cid:16882)10°C, etching speed was
`increased from 1000Å/minute to 2500Å/minute.
` It should be noted that the present invention is not
`[0030]
`limited to the abovementioned embodiments, and as long
`as it does not deviate from the gist it can be performed
`with various modifications. For example, process inside
`the vessel is not limited to thin film depposition or
`etching. It can be resist ashing or its preprocessing such
`as substrate heating or cooling, and postprocessing such
`as annealing or sintering.
`
`Fig. 4 is a characteristic diagram to describe a substrate
`temperature control method according to the above other
`embodiment, and Fig. 5 is a schematic diagram to
`describe a traditional heating method.
`
`10 vacuum vessel
`20 substrate
`30 first temperature control mechanism
`31 hot plate (electrothermal heater)
`32 electrostatic chuck board
`33 thermocouple
`34 heat exchanger
`40 second temperature control mechanism
`41 halogen lamp (infrared lamp)
`42 quartz window
`43 reflector
`
`Representative of Applicant
`Patent Attorney Takehiko SUZUE
`
`Furthermore, if the substrate can be adhered to the first
`temperature control mechanism, the electrostatic chuck is
`not always necessary. In addition, the first temperature
`control mechanism is not limited to those heating (or
`cooling) the substrate by heat conduction, and it may be
`one that heats the substrate using heat conduction as well
`as radiation.
`[Effect of the Invention]
` As explained above, according to the present
`[0031]
`invention, by providing a first temperature control
`mechanism using heat conduction and a second
`temperature control mechanism using radiation, and
`adopting these two heating methods instead of one heating
`method, heating of the substrate and the stabilization of
`temperature can be rapidly realized, and it is possible to
`contribute to increased throughput or the like in various
`substrate processing.
`
`4. Description of the Drawings
`Fig. 1 is a sectional view illustrating a schematic
`structure of a semiconductor manufacturing device
`according to one embodiment of the present invention,
`Fig. 2 is a characteristic diagram to describe a substrate
`temperature control method according to the embodiment,
`Fig. 3 is a sectional view illustrating a schematic structure
`according to another embodiment,
`
`Page 6 of 7
`
`

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