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`Global Foundaries US v. Godo Kaisha
`Global Ex. 1013
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`Page 1 of 29
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`5,478,776
`12/1995 Luftmanet al.
`sssssssseesseseseeen 437/163
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`5,538,909
`.. 437/35
`7/1996 Hsu ves
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`5,569,624 10/1996 Weiner vieccccccecccesesesssseeees 437/200
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`5,620,912
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`Sx710,450
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`5,726,071
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`5,770,507
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`4/1997 Hwanget al. voces 438/301
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`seeeesresererreeerrnen 257/344
`1/1998 Chau et a.
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`3/1998 Segawa et al. ssc 437/57
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`6/1998 Chen et ab. ceeseseseseeneerees 438/305
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`Page 2 of 29
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`FIG. 1 (prior art)
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`eeTTR_--_-ASSININONS——!———
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`|ae
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`\7 “ALLYeZ
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`a
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`x
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`Page 4 of 29
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`FIG. 3C
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`Page 5 of 29
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`Page6 of 29
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`Page 6 of 29
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`of
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`FIG. 3H
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`Page 7 of 29
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`LLLILZA LOSSES oBNEEEESRSS
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`410
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`303
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` yyy
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`4442p)
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`SAAAAASN)NN)A
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`FIG. 4B
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`Comma’,
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`y)
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`FIG. 4C
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`Page 8 of 29
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`Sheet 7 of 13
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`bth 44
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`LESKS
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`y)LARASPPDP2DE2
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`FIG. 4F
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`Page 9 of 29
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`Dec. 26, 2000
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`Sheet 8 of 13
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`FIG. 5A
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`FIG. 5B
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`FIG. 5C
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`Page 10 of 29
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`Dec. 26, 2000
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`VILLZLA >a~“ A
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`FIG. 5D
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`FIG. 5E
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`FIG. 5F
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`Page 11 of 29
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`Page 11 of 29
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`Sheet 10 of 13
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`FIG. 6C
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`Page 12 of 29
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`U.S. Patent
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`Dee. 26, 2000
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`FIG. 6D
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`Page13 of 29
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`Page 13 of 29
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`U.S. Patent
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`Dec. 26, 2000
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`Sheet 12 of 13
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`6,165,826
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`KLLLLL)USEy)
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`CLLALMALNNNNNNNAN OO OANAANASSASAAS
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`410
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`41
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`FIG. 7C
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`Page 14 of 29
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`U.S. Patent
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`Dec. 26, 2000
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`Sheet 13 of 13
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`6,165,826
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`FIG. 7D
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`FIG. 7E
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`FIG
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`Page 15 of 29
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`metal oxide semiconductor process (CMOS) is described.
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`According to a preferred method of the present invention, a
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`first gate dielectric and a first gate electrode are formed on
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`a first portion of a semiconductor substrate having a first
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`conductivity type, and a second gate dielectric and a second
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`This application is a Continuation-in-Part of U.S. patent
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`gate electrode are formed on a second portion of a semi-
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`application Ser. No. 08/363,749, filed Dec. 23, 1994 now
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`conductor substrate having a second conductivity type.
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`US. Pat. No. 5,710,450 and assigned to the present
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`Next, ions of a second conductivity type are implanted into
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`Assignee.
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`the first portion of the semiconductor substrate in alignment
`BACKGROUND OF THE INVENTION
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`with the outside edges of the first gate electrode. A silicon
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`nitride layer is then formed over the first portion of the
`1. Field of the Invention
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`semiconductor substrate including the first gate electrode
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`The present inventionrelates to the field of semiconductor
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`and over the second portion of the semiconductor substrate
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`integrated circuits, and more specifically, to the ultra large-
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`including the second gate electrode. Thesilicon nitride layer
`scale fabrication of submicrontransistors.
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`is then removed from the second portion of the silicon
`2. Discussion of Relates Art
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`substrate and from the top of the second gate electrode to
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`thereby form a first pair of silicon nitride spacers adjacent to
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`transistors are
`Today literally millions of individual
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`opposite sides of the second gate electrode. A pair of
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`recesses are then formed in the second portion of the
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`circuits, such as microprocessors, memories, and applica-
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`semiconductor substrate in alignment with the first pair of
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`tions specific integrated circuits (ICs). Presently, the most
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`silicon nitride spacers. A selectively deposited semiconduc-
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`advanced ICs are made up of approximately three million
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`tor material is then formedin the recesses. Dopants are then
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`transistors, such as metal oxide semiconductor (MOS)field
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`diffused from the selectively deposited semiconductor mate-
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`effect transistors having gate lengths on the order of 0.5 um.
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`rial into the substrate beneath the first pair of silicon nitride
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`spacers. Next, a first pair of sidewall spacers are formed
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`tational powerof future integrated circuits, more transistors
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`adjacent to opposite sides of the first gate electrode and a
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`must be packed into a single IC (.e., transistor density must
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`second pair of sidewall spacers are formed on the deposited
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`increase). Thus, future ultra large-scale integrated (ULSI)
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`semiconductor material adjacent to the outside edge of the
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`circuits will require very short channel
`transistors with
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`first pair of silicon nitride spacers. Ions of a second con-
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`effective gate lengths less than 0.1 4m. Unfortunately, the
`structure and method of fabrication of conventional MOS
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`ductivity type are then implantedintothefirst portion of the
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`semiconductor substrate in alignment with the outside edges
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`transistors cannot be simply “scaled down” to produce
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`of the first pair of sidewall spacers adjacent to the first gate
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`smaller transistors for higher density integration.
`The structure of a conventional MOStransistor 100 is
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`electrode to thereby formafirst pair of source/drain contact
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`regions in the first portion of the semiconductor substrate.
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`shownin FIG. 1. Transistor 100 comprises a gate electrode
`35
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`Silicide is then formed on the source/drain contact regions
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`102, typically polysilicon, formed on a gate dielectric layer
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`and on the first gate electrode and on the deposited semi-
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`104 which in turn is formed onasilicon substrate 106. A pair
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`conductor material in alignment with the outside edges of
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`of source/drain extensions or tip regions 110 are formed in
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`the second pair of sidewall spacers are on the second gate
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`the top surface of substrate 106 in alignment with outside
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`edges of gate electrode 102. Tip regions 110 are typically
`BRIEF DESCRIPTION OF THE DRAWINGS
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`formed by well-known ion implantation techniques and
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`extend beneath gate electrode 102. Formed adjacent
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`FIG. 1 is an illustration of a cross-sectional view of a
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`opposite sides of gate electrode 102 and overtip regions 110
`conventional transistor.
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`are a pair of sidewall spacers 108. A pair of source/drain
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`regions 120 are then formed, by ion implantation, in sub-
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`resistance ultra shallow tip transistor of the present inven-
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`strate 106 substantially in alignment with the outside edges
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`of sidewall spacers 108.
`FIG. 3a is an illustration of a cross-sectional view of the
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`As the gate length of transistor 100 is scaled down in
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`formation of a first gate electrode on a p-well and the
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`order to fabricate a smaller transistor, the depth at which tip
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`formation of a second gate electrode on a n-well.
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`region 110 extends into substrate 106 must also be scaled
`FIG. 35 is an illustration of a cross-sectional view of the
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`down(i.e., decreased) in order to improve punchthrough
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`formation of a N- tip region in the p-well in alignment with
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`characteristics of the fabricated transistor. Unfortunately, the
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`opposite sidewalls of the first gate electrode of the substrate
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`length of tip region 110, however, must be larger than 0.07
`of FIG. 3a.
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`yum to insure that the later, heavy dose, deep source/drain
`FIG. 3c is an illustration of a cross-sectional view of the
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`implant does not swamp and overwhelm tip region 110.
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`formation of a silicon nitride layer over the substrate of FIG.
`in the fabrication of a small scale transistor with
`Thus,
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`3b.
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`conventional methods, as shownin FIG. 1, the tip region 110
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`is both shallow and long. Because tip region 110 is both
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`ing the formation of a first pair of sidewall spacers on
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`shallow and long, tip region 110 exhibits substantial para-
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`opposite sides of a gate electrode formed on a substrate and
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`sitic resistance. Parasitic resistance adversely effects
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`the formation of recess regions in the n-well of the substrate
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`(reduces) the transistors drive current.
`of FIG. 3c.
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`Thus, what is needed is a novel transistor with a low
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`FIG. 3¢ is an illustration of a cross-sectional view show-
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`resistance ultra shallow tip region with a VLSI manufactur-
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`ing the deposition of semiconductor material on the sub-
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`able method of fabrication in a CMOSprocess.
`strate of FIG. 3d.
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`SUMMARYOF THE INVENTION
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`FIG. 3f is an illustration of a cross-sectional view showing
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`A novel transistor with a low resistance ultra shallow tip
`the formation of an oxide layer and a silicon nitride layer
`over the substrate of FIG. 3e.
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`region and its method of fabrication in a complementary
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`1
`TRANSISTOR WITH LOW RESISTANCE TIP
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`AND METHOD OF FABRICATIONIN A
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`CMOS PROCESS
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`6,165,826
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`Page 16 of 29
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`Page 16 of 29
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`6,165,826
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`3
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`FIG. 3g is an illustration of a cross-sectional view show-
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`ing the formation ofa first pair of sidewall spacers adjacent
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`to the first gate electrode and a second pair of sidewall
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`spacers adjacentto thefirst pair of silicon nitride spacers on
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`the substrate of FIG. 3f.
`FIG. 3A is an illustration of a cross-sectional view show-
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`ing the formation of silicide in the source/drain contact
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`regions and on the deposited semiconductor material of FIG.
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`3¢.
`FIG. 4a is an illustration of a cross-sectional view show-
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`ing the formation of a boron doped glass layer and the
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`formation of N- tip regions in the substrate of FIG. 3a.
`FIG. 46 is an illustration of a cross-sectional view show-
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`ing the formation ofa silicon nitride layer over the substrate
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`of FIG. 4a.
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`FIG. 4c is an illustration of a cross-sectional view show-
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`ing the formation of a first pair of composite sidewall
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`spacers adjacent to the gate electrode over the n-well of the
`substrate of FIG. 4b.
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`FIG. 4dis anillustration of a cross-sectional view show-
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`ing the formation of semiconductor material on the substrate
`of FIG. 4c.
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`FIG. 4e is an illustration of a cross-sectional view show-
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`ing the formationofa first pair of spacers adjacentto the gate
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`electrode formed over the p-well and the formation of a
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`second pair of spacers adjacentto the first pair of composite
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`spacers formed adjacentto the gate electrode over the n-well
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`FIG. 4fisan illustration of a cross-sectional view showing
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`the out diffusion of impurities from deposited semiconductor
`material and the formation of silicide on the substrate of
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`FIG. 4e.
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`FIG. 5a is an illustration of a cross-sectional view show-
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`ing the formation ofa silicon nitride layer over the substrate
`of FIG. 3a.
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`FIG. 56 is anillustration of a cross-sectional view show-
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`ing the formation of spacers and recesses on the substrate of
`FIG. 5a.
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`FIG. 5c is an illustration of a cross-sectional view show-
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`ing the masking of the n-well and the formation of semi-
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`conductor material on the p-well of the substrate of FIG. 5b.
`FIG. 5dis anillustration of a cross-sectional view show-
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`ing the formation of a mask over the p-well and the
`formation of semiconductor material on the n-well of the
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`substrate of FIG. 5c.
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`FIG. 5e is an illustration of a cross-sectional view show-
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`ing the formation of a thin oxide layer and the formation of
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`a thicker silicon nitride layer over the substrate of FIG. 5d.
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`FIG. 5fis an illustration of a cross-sectional view showing
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`the formation of a second pair of spacers and the out
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`diffusion of dopants from semiconductor material on the
`substrate of FIG. 5e.
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`FIG. 6a is an illustration of a cross-sectional view show-
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`ing the formation of p-type semiconductor material on a
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`n-well, and the formation of undoped semiconductor mate-
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`rial on a p-well of a substrate.
`FIG. 66 is an illustration of a cross-sectional view show-
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`ing the formation of a mask and the ion implantation of the
`substrate of FIG. 6a.
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`FIG. 6c is an illustration of a cross-sectional view show-
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`ing the formation of sidewall spacers and the implantation of
`the substrate of FIG. 6b.
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`FIG. 6dis anillustration of a cross-sectional view show-
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`ing the diffusion of impurities from semiconductor material
`and the formation of silicide of the substrate of FIG. 6c.
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`Page 17 of 29
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`4
`FIG. 7a is an illustration of a cross-sectional view show-
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`ing the formation and patterning of a boron dopedglass layer
`on the substrate of FIG. 3a.
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`FIG. 7b is an illustration of a cross-sectional view show-
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`ing the formation ofa silicon nitride layer over the substrate
`of FIG. 7a.
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`FIG. 7c is anillustration of a cross-sectional view show-
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`ing the formation of spacers and recesses in the substrate of
`FIG. 7b.
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`FIG. 7d is an illustration of a cross-sectional view show-
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`ing the formation of semiconductor material over the sub-
`strate of FIG. 7c.
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`FIG. 7e is an illustration of a cross-sectional view show-
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`ing the formation of a second pair of spacers over the
`substrate of FIG. 7d.
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`FIG. 7f is an illustration of a cross-sectional view showing
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`the out diffusion of impurities from deposited semiconductor
`material and the formation of silicide on the substrate of
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`FIG. 7e.
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`DETAILED DESCRIPTION OF THE PRESENT
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`INVENTION
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`A novel transistor with a low resistance ultra shallow tip
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`and its method of fabrication in a complementary metal
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`oxide semiconductor (CMOS) process is described. In the
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`following description numerousspecific details are set forth,
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`such as specific materials, dimensions, and processes,etc.,
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`in order to provide a thorough understanding of the present
`invention. It will be obvious, however, to one skilled in the
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`that
`the invention may be practiced without
`these
`art,
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`specific details. In other instances, well-known semiconduc-
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`tor equipment and processes have not been described in
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`particular detail in order to avoid unnecessarily obscuring
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`the present invention.
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`A preferred embodiment of a novel transistor 200 with
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`low resistivity, ultra shallow tip of the present invention is
`shown in FIG. 2. Transistor 200 is formed on a silicon
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`substrate or well 201. A gate dielectric layer 202 is formed
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`on a surface 203 of substrate 201 and a gate electrode 204
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`is in turn formed on gate dielectric layer 202. A first pair of
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`thin sidewall spacers 206 are formed on opposite sides of
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`gate electrode 204 (spacers 206 run along the “width” of
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`gate electrode 204). Transistor 200 also includes a second
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`pair of substantially thicker sidewall spacers 208 formed
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`adjacent to the outside edges of the first pair of sidewall
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`spacers 206. Transistor 200 includes a pair of source/drain
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`regions 211 each comprising a pair of tips or source/drain
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`extensions 210 and a source/drain contact region 212.
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`Tip or source/drain extension 210 is defined as the source/
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`drain region located beneath second sidewall spacer 208,
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`first sidewall spacer 206, and the outside edge of gate
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`electrode 204. Tip 210 comprises an ultra shallow tip portion
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`214 and a raised tip portion 216. Ultra shallow tip portion
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`214 is comprised of a doped semiconductor substrate 215
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`formed by “out diffusing” dopants from selectively depos-
`ited semiconductor material 217 into substrate 201. Ultra
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`shallow tip 214 extends from beneath first sidewall spacer
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`206 to the outside edges of gate electrode 204. Ultra shallow
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`tip 214 preferably extendsat least 100A beneath (laterally)
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`gate electrode 204 and preferably 500 A fora transistor with
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`an effective gate length of approximately 0.10 microns (or
`1000 A) and a drawn gate length of 0.2 wm. Additionally,
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`ultra shallow tip 214 preferably extends less than 1000 A
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`deep into substrate 201 beneath substrate surface 203 for a
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`0.10 um effective gate length. It is to be appreciated that
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`because novel methods of fabrication are employed in the
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`Page 17 of 29
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`6,165,826
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`5
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`present invention, ultra shallow tip 214 can be characterized
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`by a very abrupt junction.
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`Tip 210 of transistor 200 also includesa raised tip portion
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`216. Raised tip portion 216 is located beneath second
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`sidewall spacer 208 and is adjacent to the outside edges of
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`first sidewall spacer 206. Raised tip 216 is preferably formed
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`of doped semiconductor material 217 selectively deposited
`both above and below surface 203 of semiconductor sub-
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`strate 201. Raised tip portion 216 also includesa portion 215
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`doped by “out diffusing” dopants from selectively deposited
`semiconductor material 217 into substrate 201. Because a
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`portion of raised tip 216 is formed above semiconductor
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`substrate surface 203, raised tip 216 is said to be “raised”. A
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`raised tip significantly reduces the parasitic resistance of
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`transistor 200 and thereby improves its performance.
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`A pair of source/drain contact regions 212 are formed
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`adjacent to the outside edge of second sidewall spacer 208.
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`Source/drain contact regions 212 comprise selectively
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`deposited semiconductor material 217 and “out diffused”
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`doped semiconductor substrate 215. Source/drain contact
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`regions 212 are partially raised source/drain regions. Silicide
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`218 is preferably formed on source/drain regions 212 in
`order to reduce the contact resistance of transistor 200.
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`Additionally, according to the present invention, first semi-
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`conductor material 217 is preferably deposited onto the top
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`surface of gate electrode 204. Silicide 218 is also preferably
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`formed on deposited semiconductor material 217 on gate
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`electrode 204 to help improve contact resistance.
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`Additionally, if desired, source/drain contact regions 212
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`can be madeinto deep junction source/drain contacts by ion
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`implanting or diffusing additional dopants into a region 220
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`in substrate 201 in alignment with the outside edges of
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`second sidewall spacers 208.
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`It is to be appreciated that a valuable feature of the present
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`invention is the fact that transistor 200 includes a tip or
`source/drain extension 210 which is both ultra shallow and
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`raised. In this way, transistor 200 has a shallow tip with a
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`very low parasitic resistance. The novel structure of tran-
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`sistor 200 allowsfor tip scaling necessary for the fabrication
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`of transistor 200 with effective gate length less than 0.12 um.
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`Because of the novel
`tip structure 210 of the present
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`invention,
`transistor 200 has good punchthrough perfor-
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`mance and reduced V; roll-off. Additionally, because of tip
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`210, transistor 200 has a low parasitic resistance, resulting in
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`good drive current.
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`The present invention describes several methodsofinte-
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`grating the fabrication of a transistor with a low resistance
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`ultra shallow tip into a CMOSprocess(i.e. into a process
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`where both n-type and p-type transistors are formed).
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`According to a first preferred method of the present
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`invention, as illustrated in FIGS. 3a—3h, a PMOStransistor
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`having a low resistance ultra shallow tip is fabricated with
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`a conventional NMOStransistor. According to the preferred
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`method of the present invention, a silicon substrate 300 is
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`provided. A plurality of field isolation regions 305 are
`formed in substrate 300 to isolate wells of different conduc-
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`tivity types and to isolate adjacent transistors. Field isolation
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`regions 305 are preferably shallow trench isolation (STI)
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`regions formed by etching a trench into substrate 300 and
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`then filling the trench with a deposited oxide. Although STI
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`isolation regions are preferred because of their ability to be
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`formed to small dimensions with a high degree of planarity,
`other methods can be used such as, but not
`limited to,
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`LOCOS, recessed LOCOS, or silicon on insulator (SOD),
`and suitable insulators, other than oxides, such as nitrides
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`may be used if desired.
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`Page18 of 29
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`6
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`Silicon substrate 300 includesa first region 302 of p-type
`conductivity in the range of 1x1077/em?-1x101°/em? and a
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`second region 304 of n-type conductivity in the range of
`1x10*7/cm?—1x107°/em*. According to the preferred
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`embodiment, n-type conductivity region 304 is a n-well
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`formed bya first implant of phosphorousatomsat a dose of
`4x10"5/em? and an energy of 475 keV, a second implant of
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`phosphorous atomsat a dose of 2.5x10'*/cm? at an energy
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`of 60 keV, and a final implant of arsenic atomsat a dose of
`1x107%/cm? at an energy of 180 keV into a silicon substrate
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`300 having a concentration of 1x10'°/cm* in order to
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`produce a n-well 304 having a n-type concentration of
`approximately 7.0x10*7/cm?. Additionally, accordingto the
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`preferred embodimentof the present invention, p-type con-
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`ductivity region 302 is a p-well formed bya first implant of
`boron atomsat a dose of 3.0x101%/cm? at an energy of 230
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`keV followed by a second implant of boron ionsat a dose of
`4.2x10"3/cm? and an energy of 50 keV into substrate 300 in
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`order to produce a p-well 302 having a p-concentration of
`7.0x10"7/cm*.It is to be appreciated that p-type conductivity
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`region 302 and n-type conductivity 304 may be formed by
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`other means including providing an initially doped substrate,
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`or depositing an insitu doped semiconductor material with a
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`desired conductivity. According to the present invention, a
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`substrate is defined as the starting material on which the
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`transistors of the present
`invention are fabricated and
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`includes p-well 302 and n-well 304.
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`According to the present invention, a first gate dielectric
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`layer 303 is formed on the top surface 301 of substrate 300
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`as shown in FIG. 3a. Gate dielectric layer 303 is preferably
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`a nitrided oxide layer formed to a thickness of between
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`20-50 angstroms(A). It is to be appreciated that other well
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`known gate dielectric layers such as oxides, nitrides, and
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`combinations thereof may be utilized if desired. Next, a gate
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`electrode 306 is formed over gate dielectric layer 303
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`formed over p-well 302 and a gate e