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`UNITED STATES PATENT AND TRADEMARK OFFICE
`_______________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`
`_______________
`
`GlobalFoundries U.S. Inc.
`
`Petitioner
`
`v.
`
`Godo Kaisha IP Bridge 1
`
`Patent Owner
`
`Patent No. 6,197,696
`Filing Date: March 23, 1999
`Issue Date: March 6, 2001
`
`Title: METHOD FOR FORMING INTERCONNECTION STRUCTURE
`_______________
`
`Inter Partes Review No. IPR2017-00923
`
`_____________________________________________________________________
`
`PETITION FOR INTER PARTES REVIEW
`UNDER 35 U.S.C. §§ 311-319 AND 37 C.F.R. § 42.100 ET SEQ.
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`Table of Contents
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`
`I.
`II.
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`
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`IV.
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`
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`V.
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`
`
`Preliminary Statement .......................................................................................................1
`Technological Background ................................................................................................1
`A.
`Integrated Circuits and Interconnections .................................................................1
`B.
`Semiconductor Etching and Photolithography ........................................................4
` The ’696 Patent ..................................................................................................................6
`III.
`A.
`Description of the Challenged Claims .....................................................................6
`B.
`Examination of the ’696 Patent..............................................................................13
`C.
`The Challenged Claims Are Not Entitled to the Benefit of Foreign Priority ........13
`
`The first, second, and fourth embodiments of the ’371 application
`1.
`do not disclose step g) of claim 13 ............................................................ 15
`The third, variant of the third, and fourth embodiments do not
`disclose step h) of claim 13 ....................................................................... 16
`The third, variant of the third, and fourth embodiments do not
`disclose step i) of claim 13 ........................................................................ 17
`Statement of Precise Relief Requested for Each Claim Challenged ...........................19
`A.
`Claims for Which Review is Requested ................................................................19
`B.
`Statutory Grounds of Challenge .............................................................................19
`C.
`Level of Ordinary Skill ..........................................................................................19
`D.
`Claim Construction ................................................................................................19
`Claims 13 and 14 of the ’696 Patent Are Unpatentable Over the Prior Art ..............20
`A.
`Disclosures of the Prior Art ...................................................................................20
`
`Grill (U.S. Patent No. 6,140,226) ............................................................. 20
`1.
`
`Aoyama (U.S. Patent No. 5,592,024) ........................................................ 24
`2.
`Grill Anticipates Claims 13 and 14 .......................................................................25
`
`Grill anticipates claim 13 .......................................................................... 25
`1.
`
`Grill anticipates claim 14 .......................................................................... 36
`2.
`The Grill-Aoyama Combination Renders Claims 13 and 14 Obvious ..................37
`
`A POSITA would have found it obvious to combine teachings of
`1.
`Grill and Aoyama ...................................................................................... 37
`Claim 13 is obvious in view of the Grill-Aoyama combination ............... 40
`
`2.
`Claim 14 is obvious in view of the Grill-Aoyama combination ............... 50
`
`3.
`Alternative Combinations for Claim 14 .................................................................50
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`2.
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`3.
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`B.
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`C.
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`D.
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`i
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`1.
`2.
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`3.
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`4.
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`5.
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`VI.
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`Disclosure of Wetzel (U.S. Patent No. 5,920,790) .................................... 50
`A POSITA would have combined teachings of Wetzel with
`teachings of Grill ...................................................................................... 51
`A POSITA would have combined teachings of Wetzel with
`teachings of Grill and Aoyama ................................................................. 52
`Claim 14 is obvious in view of the Grill-Wetzel combination .................. 52
`Claim 14 is obvious in view of the Grill-Aoyama-Wetzel
`combination............................................................................................... 53
` Mandatory Notices Under 37 C.F.R. §42.8 ....................................................................53
`A.
`Real Parties-In-Interest ..........................................................................................53
`B.
`Related Matters ......................................................................................................53
`C.
`Lead and Back-Up Counsel ...................................................................................55
`D.
`Service Information ...............................................................................................55
` Certification Under 37 C.F.R. §42.24(d) ........................................................................56
`VII.
` Payment of Fees................................................................................................................56
`VIII.
`Time for Filing Petition ...................................................................................................56
`
`IX.
`Grounds for Standing ......................................................................................................56
`
`X.
` Conclusion ........................................................................................................................56
`XI.
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`ii
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`TABLE OF AUTHORITIES
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`CASES
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`Page(s)
`
`Ariosa Diagnostics, Inc. v. Illumina, Inc., IPR2014-01093, Paper 69 (Jan. 7, 2016) ...................21
`
`Core Survival, Inc. v. S&S Precision, LLC, PGR2015-00022, Paper 8 (Feb. 19,
`2016) ........................................................................................................................................14
`
`Dynamic Drinkware, LLC v. Nat’l Graphics, Inc., 800 F.3d 1375 (Fed. Cir. 2015) ....................21
`
`Exergen Corp. v. Wal-Mart Stores, Inc., 575 F.3d 1312 (Fed. Cir. 2009) ..............................37, 44
`
`Fiers v. Revel, 984 F.2d 1164 (Fed. Cir. 1993) .............................................................................14
`
`In re Ziegler, 992 F.2d 1197 (Fed. Cir. 1993) ...............................................................................15
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`Phillips v. AWH Corp., 415 F.3d 1303 (Fed. Cir. 2005) (en banc) ...............................................20
`
`STATUTES AND RULES
`
`35 U.S.C. ........................................................................................................................................19
`
`35 U.S.C. §§ 102 and 103 ..............................................................................................................20
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`35 U.S.C. §§ 311–319 ......................................................................................................................2
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`35 U.S.C. § 311(c) .........................................................................................................................56
`
`MISCELLANEOUS
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`37 C.F.R. § 42.8 .......................................................................................................................54, 56
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`37 C.F.R. § 42.24 ...........................................................................................................................56
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`37 C.F.R. § 42.24(d) ......................................................................................................................56
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`37 C.F.R. § 42.100(b) ....................................................................................................................20
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`37 C.F.R. § 42.100 et seq. ................................................................................................................2
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`37 C.F.R. § 42.101(b) ....................................................................................................................56
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`37 C.F.R. § 42.102(a).....................................................................................................................56
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`37 C.F.R. §§ 42.103(a) and 42.15(a) .............................................................................................56
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`iii
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`37 C.F.R. § 42.104(a).....................................................................................................................56
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`37 C.F.R. § 42.108 .........................................................................................................................14
`
`C. Akrout et al., “A 480-MHz Microprocessor in a 0.12µm Leff CMOS
`Technology with Copper Interconnects,” ..................................................................................1
`
`Further, Grill ..................................................................................................................................27
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`Grill’s Figure 5A................................................................................................................27, 28, 29
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`Grill’s Figure 5B ............................................................................................................................30
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`Grill’s Figure 5C ............................................................................................................................30
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`Grill’s Figure 5D............................................................................................................................31
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`Grill’s Figures 1K and 1L ..............................................................................................................37
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`Grill’s Figures 5E and 5F ..............................................................................................................33
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`Grill’s Figures 5F and 5G ..............................................................................................................33
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`Grill’s Figures 5G and 5H .............................................................................................................35
`
`IPR2016-01376, IPR2016-01377 ..................................................................................................54
`
`J.N. Burghartz et al., “Monolithic Spiral Inductors Fabricated Using a VLSI Cu-
`Damascene Interconnect Technology and Low-Loss Substrates,” ............................................1
`
`Petition Grill ..................................................................................................................................54
`
`U.S. Patent No. 3,617,824................................................................................................................1
`
`U.S. Patent No. 3,838,442................................................................................................................1
`
`U.S. Patent No. 5,592,024..........................................................................................................1, 25
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`U.S. Patent No. 5,635,423................................................................................................................1
`
`U.S. Patent No. 5,741,626................................................................................................................1
`
`U.S. Patent No. 5,920,790..........................................................................................................1, 51
`
`U.S. Patent No. 6,100,184................................................................................................................1
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`U.S. Patent No. 6,103,616................................................................................................................1
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`U.S. Patent No. 6,140,226..........................................................................................................1, 20
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`iv
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`U.S. Patent No. 6,197,696...................................................................................................... passim
`U. S. Patent No. 6,197,696 .................................................................................................... .. passim
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`LIST OF EXHIBITS
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`Petition Exhibit 1001:
`
`U.S. Patent No. 6,197,696 to Aoi et al.
`
`Petition Exhibit 1002:
`
`Expert Declaration of Dr. Bruce W. Smith, Ph.D.
`
`Petition Exhibit 1003:
`
`U.S. Patent No. 3,617,824 to Shinoda et al.
`
`Petition Exhibit 1004:
`
`U.S. Patent No. 3,838,442 to Humphreys.
`
`Petition Exhibit 1005:
`
`U.S. Patent No. 6,140,226 to Grill et al.
`
`Petition Exhibit 1006:
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`U.S. Patent No. 5,635,423 to Huang et al.
`
`Petition Exhibit 1007:
`
`U.S. Patent No. 5,741,626 to Jain et al.
`
`Petition Exhibit 1008:
`
`Petition Exhibit 1009:
`
`C. Akrout et al., “A 480-MHz Microprocessor in a 0.12µm Leff
`CMOS Technology with Copper Interconnects,” IEEE J. of Solid-
`State Circuits, Vol. 33, no. 11 (November 1998).
`
`J.N. Burghartz et al., “Monolithic Spiral Inductors Fabricated
`Using a VLSI Cu-Damascene Interconnect Technology and Low-
`Loss Substrates,”
`International Electron Devices Meeting
`(December 1996).
`
`Petition Exhibit 1010:
`
`U.S. Patent No. 6,100,184 to Zhao et al.
`
`Petition Exhibit 1011:
`
`U.S. Patent No. 6,103,616 to Yu et al.
`
`Petition Exhibit 1012:
`
`File History of U.S. Patent No. 6,197,696 to Aoi et al.
`
`Petition Exhibit 1013:
`
`Japanese Patent Application No. 10-079371 to Aoi.
`
`Petition Exhibit 1014:
`
`Certified Translation of Japanese Patent Application No. 10-
`079371 to Aoi.
`
`Petition Exhibit 1015:
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`Japanese Patent Application No. 11-075519 to Aoi.
`
`Petition Exhibit 1016:
`
`Certified Translation of Japanese Patent Application No. 11-
`075519 to Aoi.
`
`Petition Exhibit 1017:
`
`U.S. Provisional Patent Application No. 60/071,628.
`
`Petition Exhibit 1018:
`
`U.S. Patent No. 5,592,024 to Aoyama et al.
`
`Petition Exhibit 1019:
`
`U.S. Patent No. 5,920,790 to Wetzel et al.
`
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`I.
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`
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`Preliminary Statement
`
`U.S. Patent No. 6,197,696 (Ex. 1001) is directed to methods for forming integrated
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`circuit “interconnects,” which link components in a microchip. In particular, the ’696 patent is
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`directed to common “dual damascene” processes for forming interconnects.
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`Supported by the Expert Declaration of Bruce Smith, Ph.D., (Ex. 1002), this Petition
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`establishes that challenged claims 13 and 14 are unpatentable. Rather than defining novel or
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`nonobvious subject matter, the challenged claims recite well-known processes for making well-
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`known structures. Petitioner respectfully requests inter partes review under 35 U.S.C. §§311–
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`319 and 37 C.F.R. §42.100 et seq., and cancellation of the challenged claims.
`
`II.
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`
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`Technological Background
`
`A.
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`Integrated Circuits and Interconnections
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`Integrated circuits contain millions of discrete semiconductor devices electrically
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`connected by “interconnections,” or “interconnects,” to form circuits. Shinoda (Ex. 1003),
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`which dates to 1965, provides an early example. (Ex. 1003, 4:30–73, Figs. 6, 7 (below with
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`highlights).)
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`1
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`Interconnects typically have “via” portions extending between the planes of adjacent
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`layers to provide electrical connections between those layers. (Ex. 1002, ¶33.) Interconnects also
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`typically have “trench” patterns, which act as wires to define circuits by linking the vias
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`appropriately. These interconnect schemes were common years before the application for the
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`’696 patent was filed. (See, e.g., Ex. 1004, Abstract, 1:54–2:6, 8:19–54, Figs. 6, 6A (below with
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`highlights), 7, 7A.)
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`2
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`Multiple levels of interconnects are typical. (Ex. 1002, ¶34.) Examples of this type of
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`wiring scheme, which was also common years before the time the application for the ’696 patent
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`was filed, appear below. (Ex. 1008, 1–4, Fig. 2; Ex. 1009, 1–2, Fig. 2; Ex. 1002, ¶34.)
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`
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`In a dual damascene process, such the ones as described by the ’696 patent, the via and
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`trench structures are formed during the same process. (See Ex. 1009, 1; Ex. 1002, ¶35.) The via
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`and trench patterns are etched into insulating material and then filled with metal and polished
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`flat. (Ex. 1002, ¶35.) Like other interconnect structures, dual damascene processes result in vias
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`that vertically link metallization levels and trenches that link the vias together horizontally to
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`form circuits. (Ex. 1005, 1:45–48, 3:33–36; Ex. 1006, Abstract, 2:61–3:2, 3:54–57; Ex. 1007,
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`2:15– 20.) Examples appear below with annotations. (Ex. 1005, Fig. 1L; Ex. 1006, Figs. 6(c), 9;
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`Ex. 1007, Fig. 5.)
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`3
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`B.
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`Semiconductor Etching and Photolithography
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`Two processing technologies that can create patterns in a semiconductor wafer are
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`photolithography and etching. In photolithography, a chemical called photoresist uniformly
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`coats the surface of the semiconductor wafer. (Ex. 1002, 137.) Photoresist is sensitive to light
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`and will change its molecular structure when illuminated under certain conditions. (Id.) A
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`photomask, which is transparent in some regions and opaque in others, contains a pattern that
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`can be transferred to the photoresist on the surface of the wafer. (Id., 138.) After the photomask
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`is aligned, the photoresist is illuminated through the photomask. (Id.) The exposed photoresist is
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`altered by the light, and any photoresist not part of the pattern can be removed with a chemical
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`called a “developer.” (Id., 139.)
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`The processed wafer retains the patterned photoresist layer, which can pattern material
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`underneath the photoresist. (Id.) Schematic representations of photolithography appear below.
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`(Id., 140.)
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`
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`A patterned photoresist layer can serve as a mask during an “etch” process. In etching,
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`the surface of the processed wafer (semiconductor substrate and/or overlying layers) is exposed
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`to corrosive chemicals to remove certain portions of the wafer. (Id., 142.) After etching, the
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`photoresist may be “stripped” (removed) from the wafer by another chemical treatment. (Id.,
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`143.) In some cases, photoresist may even be removed by the etching process itself. A
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`representation of photolithography and etching appears below.
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`(Id.)
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`5
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`An etch that attacks all exposed materials is called a non-selective etch, whereas an etch
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`that attacks certain material compositions more than others is called a selective etch. (Id., ¶44.)
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`An etch that attacks a material in all directions is called isotropic, whereas an etch that attacks in
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`a preferred direction (often perpendicular to the surface of the wafer) is called anisotropic. (Id.,
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`¶45.) An etch that uses a liquid etching agent is called a “wet” etch, whereas an etch that does
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`not use a liquid etching agent (typically using an ionized gas, called a “plasma”) is called a “dry”
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`etch. (Id., ¶46.) Dual damascene processes typically use selective, anisotropic, dry etching. (Id.,
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`¶47; see also, e.g., Ex. 1006, 2:61–63; Ex. 1010, 2:44–48; Ex. 1011, 4:9–12.)
`
` The ’696 Patent
`III.
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`A.
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`Description of the Challenged Claims
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`This Petition challenges the patentability of claims 13 and 14 of the ’696 patent.
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`Independent claim 13 recites “[a] method for forming an interconnection structure,” and claim 14
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`depends from claim 13. (Ex. 1001, 34:58–36:18.) Claim 13 reads on several embodiments of the
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`’696 patent. (Ex. 1002, ¶¶48–115; see also Ex. 1001, 27:63–29:60, Figs. 30(a)–35(c).) The steps
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`of claim 13 are described below with reference to the sixth embodiment, including the modified
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`sixth embodiment. The supporting declaration of Dr. Smith also describes the challenged claims
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`and the embodiments of the ’696 patent. (See Ex. 1002, ¶¶48–121.)
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`1.
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`step a) of Claim 13
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`Step a) of claim 13 recites “forming a first insulating film [603] over lower-level metal
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`interconnects [601].”
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`In the sixth embodiment the claimed first insulating film is element 603 [or 653], located
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`over lower-level interconnects 601 [or 651] and formed of an insulating organic film. (Ex. 1001,
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`28:1–9, 30:1–11, Figs. 30(a), 33(a); Ex. 1002, ¶ ¶53–54.) An example of step a) from the ’696
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`patent appears with highlights in the Figure below. (Ex. 1001, 28:1–36, Fig. 30(a); Ex. 1002,
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`¶¶50–55.)
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`2.
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`step b) of Claim 13
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`Step b) of claim 13 recites “forming a second insulating film [604], having a different
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`composition than that of the first insulating film, over the first insulating film [603].”
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`In the sixth embodiment, the composition of the claimed second insulating film 604 [or
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`654] differs from the composition of the claimed first insulating film 603 [or 653]. Second
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`insulating film 604 [or 654] is silicon dioxide, whereas first insulating film 603 [or 653] is an
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`organic film. (Ex. 1001, 28: 6–11, 30:6–11, Figs. 30(a), 33(a); Ex. 1002, ¶¶59–60.) An example
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`of step b) from the ’696 patent appears with highlights in the Figure below. (Ex. 1001, 28:1–36,
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`Fig. 30(a); Ex. 1002, ¶¶56–61.)
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`3.
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`step c) of Claim 13
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`Step c) of claim 13 recites “forming a third insulating film [605], having a different
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`composition than that of the second insulating film, over the second insulating film [604].”
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`7
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`In the sixth embodiment, the composition of the claimed third insulating film 605 [or
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`655] differs from the composition of the claimed second insulating film 604 [or 654]. Third
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`insulating film 605 [or 655] is an organic insulating film, whereas second insulating film 604 [or
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`654] is silicon dioxide. (Ex. 1001, 28: 9–13, 30:9–14, Figs. 30(a), 33(a); Ex. 1002, ¶¶65–66.) An
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`example of step c) from the ’696 patent appears with highlights in the Figure below. (Ex. 1001,
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`28:1–36, Fig. 30(a); Ex. 1002, ¶¶62–67.)
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`4.
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`step d) of Claim 13
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`Step d) of claim 13 recites “forming a thin film [606] over the third insulating film
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`[605].”
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`In the sixth embodiment, “a titanium nitride film 606[/656] (thin film) is deposited to be
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`50 nm thick.” (Ex. 1001, 28:14–16, 30:14–16, Figs. 30(a), 33(a); Ex. 1002, ¶¶71–72.) An
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`example of step d) from the ’696 patent appears with highlights in the Figure below. (Ex. 1001,
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`28:1–36, Fig. 30(a); Ex. 1002, ¶¶68– 73.)
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`5.
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`step e) of Claim 13
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`Step e) of claim 13 recites “forming a first resist pattern [607] on the thin film [606], the
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`first resist pattern having openings for forming wiring grooves.”
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`In the sixth embodiment “a first resist pattern 607[/657], having openings for forming
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`wiring grooves, is formed by lithography on the titanium nitride film 606[/656].” (Ex. 1001,
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`28:37–39, 30:37–39, Figs. 30(b), 33(b); Ex. 1002, ¶¶77–78.) An example of step e) from the
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`’696 patent appears with highlights in the Figure below. (Ex. 1001, 28:37–43, Fig. 30(b); Ex.
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`1002, ¶¶74–79.)
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`6.
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`step f) of Claim 13
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`Step f) of claim 13 recites “etching the thin film [606] using the first resist pattern [607]
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`as a mask, thereby forming a mask pattern [608] out of the thin film to have the openings for
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`forming wiring grooves.”
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`In the sixth embodiment “the titanium nitride film 606[/656] is dry-etched using the first
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`resist pattern 607[/657] as a mask, thereby forming a mask pattern 608[/658], having openings
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`for forming wiring grooves, out of the titanium nitride film 606[/656].” (Ex. 1001, 28:39–43,
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`30:39–43, Figs. 30(c), 33(c); Ex. 1002, ¶¶83–84.) An example of step f) from the ’696 patent
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`appears with highlights in the Figure below. (Ex. 1001, 28:37–43, Fig. 30(c); Ex. 1002, ¶¶80–
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`85.)
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`7.
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`step g) of Claim 13
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`Step g) of claim 13 recites “removing the first resist pattern [607] and then forming a
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`second resist pattern [609] on the third insulating film [605] and the mask pattern [608], the
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`second resist pattern having openings for forming contact holes.”
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`In the sixth embodiment, “the first resist pattern 607[/657] is removed.” (Ex. 1001,
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`28:44–46, 30:44–46, Figs. 31(a), 34(a).) “Then, as shown in FIG. 31(b)[/FIG. 34(b)], a second
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`resist pattern 609[/659], having openings for forming contact holes, is formed by lithography on
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`the mask pattern 608[/658].” (Id., 28:49–51, 30:49–57, Figs. 31(b), 34(b); Ex. 1002, ¶¶89–90.)
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`An example of step g) from the ’696 patent appears with highlights in the Figure below. (Ex.
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`1001, 28:44–51, Figs. 31(a), 31(b); Ex. 1002, ¶¶86–91.)
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`
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`8.
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`step h) of Claim 13
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`Step h) of claim 13 recites “dry-etching the third insulating film [605] using the second
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`resist pattern [609] and the mask pattern [608] as a mask, thereby patterning the third insulating
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`film to have the openings for forming contact holes.”
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`In the sixth embodiment, “the second organic film 605[/655] is dry-etched using the
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`second resist pattern 609[/659] and the mask pattern 608[/658] as a mask, thereby forming a
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`10
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`patterned second organic film 605A[/655A] having openings for forming contact holes.” (Ex.
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`1001, 28:51–55, 30:58–62, Figs. 31(c), 34(c); Ex. 1002, ¶¶95–96.) An example of step h) from
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`the ’696 patent appears with highlights in the Figure below. (Ex. 1001, 28:51–55, Fig. 31(c); Ex.
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`1002, ¶¶92–97.)
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`9.
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`step i) of Claim 13
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`Step i) of claim 13 recites “dry-etching the second insulating film [604] using the
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`patterned third insulating film [605A] as a mask, thereby patterning the second insulating film to
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`have the openings for forming contact holes.”
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`In the sixth embodiment, “the silicon dioxide film 604[/654] is dry-etched using the
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`patterned second organic film 605A[/655A] as a mask, thereby forming a patterned silicon
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`dioxide film 604A[/654A] having openings for forming contact holes.” (Ex. 1001, 29:1–5, 31:7–
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`11, Figs. 32(a), 35(a); Ex. 1002, ¶¶101–02.) An example of step i) from the ’696 patent appears
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`with highlights in the Figure below. (Ex. 1001, 29:1–5, Fig. 32(a); Ex. 1002, ¶¶98–103.)
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`11
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`10.
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`step j) of Claim 13
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`Step j) of claim 13 recites “dry-etching the patterned third insulating film [605A] and the
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`first insulating film [603] using the mask pattern [608] and the patterned second insulating film
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`[604A] as respective masks, thereby forming wiring grooves and contact holes in the patterned
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`third insulating film and the first insulating film, respectively.”
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`In the sixth embodiment, “the patterned second organic film 605A[/655A] and the first
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`organic film 603[/653] are dry-etched using the mask pattern 608[/658] and the patterned silicon
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`dioxide film 604A[/654A] as respective masks, thereby forming a patterned second organic film
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`605B[/655B] having wiring grooves 610[/660] and a patterned first organic film 603A[/653A]
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`having contact holes 611[/661].” (Ex. 1001, 29:6–12, 31:12–18, Figs. 32(b), 35(b); Ex. 1002,
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`¶¶107–08.) An example of step j) from the ’696 patent appears with highlights in the Figure
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`below. (Ex. 1001, 29:6–12, Fig. 32(b); Ex. 1002, ¶¶104–09.)
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`11.
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`step k) of Claim 13
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`Step k) of claim 13 recites “filling in the wiring grooves and the contact holes with a
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`metal film, thereby forming upper-level metal interconnects [612] and contacts [613] connecting
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`the lower- and upper-level metal interconnects together.”
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`In the sixth embodiment, “a metal film is deposited over the entire surface of the
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`substrate to completely fill in the contact holes 611[/661] and the wiring grooves 610[/660].”
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`(Ex. 1001, 29:24–26, 31:30–32, Figs. 32(c), 35(c).) “As a result, second metal interconnects
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`612[/662] and contacts 613[/663], connecting the first and second metal interconnects 601[/651]
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`12
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`and 612[/662] together, are formed.” (Id., 29:35–38, 31:41–44; Ex. 1002, ¶¶113–14.) An
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`example of step k) from the ’696 patent appears with highlights in the Figure below. (Ex. 1001,
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`29:24–39, Fig. 32(c); Ex. 1002, ¶¶110–15.)
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`12.
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`Dependent Claim 14
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`Claim 14 depends from claim 13 and further recites that “at least one of the first and third
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`insulating films is mainly composed of an organic component.” (See Ex. 1001, 22:52–23:24,
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`24:60–25:11, 28:1–36, 30:1–16, Figs. 21(a), 24(a), 30(a), 33(a); Ex. 1002, ¶¶116–21.)
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`B.
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`Examination of the ’696 Patent
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`The application for the ’696 patent was filed on March 23, 1999, and claims foreign
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`priority to Japanese Patent Application No. 10-079371, filed on March 26, 1998.
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`The original application for the ’696 patent included 15 claims. (Ex. 1012, 150–58.) The
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`Examiner issued a first-action Notice of Allowability, accompanied by a statement of reasons for
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`allowance, stating simply, “Prior art lacks the steps of forming an interconnection structure as
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`recited in the claims.” (Id., 352–53.) The ’696 patent issued on March 6, 2001, with all 15
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`original claims.
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`C.
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`The Challenged Claims Are Not Entitled to the Benefit of Foreign Priority
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`The ’696 patent claims priority to Japanese Patent Application No. 10-079371 (Ex. 1013;
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`Ex. 1014) (“the ’371 application”), filed March 26, 1998, but the challenged claims are not
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`entitled to the benefit of foreign priority. Patent Owner bears the burden of proving entitlement
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`to such priority, Fiers v. Revel, 984 F.2d 1164, 1169 (Fed. Cir. 1993); Core Survival, Inc. v. S&S
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`13
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`Precision, LLC, PGR2015-00022, Paper 8, at 7–10 (Feb. 19, 2016), but Patent Owner cannot
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`meet its burden here. Moreover, “genuine issue[s] of material fact . . . will be viewed in the light
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`most favorable to the petitioner.” 37 C.F.R. §42.108.
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`The challenged claims are directed to the fifth, modified fifth, sixth, and modified sixth
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`embodiments of the ’696 patent (the “new embodiments”). (Ex.1002, ¶¶48–121.) The ’371
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`application, however, describes only the first through fourth embodiments of the ’696 patent.
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`(Compare Ex. 1014, ¶¶0028–0115, Figs. 1(a)–20(c), with Ex. 1001, 10:22–22:44, Figs. 1(a)–
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`20(c); see also Ex. 1002, ¶123.)
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`The ’371 application does not disclose the new embodiments to which the challenged
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`claims are directed. (Compare generally Ex. 1014, with Ex. 1001, 22:46–32:9, Figs. 21(a)–37(b);
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`see also Ex. 1002, ¶¶122–24.) It also does not include Figures 21(a)–37(b) or claims 10–15,
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`which relate to the new embodiments of the ’696 patent. (See Ex. 1014, [Claim 1]–[Claim 9],
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`[Figure 1]–[Figure 20].) The descriptions, figures, and claims relevant to the subject matter
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`challenged in this petition were added in Japanese Patent Application No. 11-075519 (Ex. 1015;
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`Ex. 1016), filed March 9, 1999, and the application for the ’696 patent, filed March 23, 1999.
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`(See Ex. 1016, [Claim 9]–[Claim 15], ¶¶0124–0201; Ex. 1012, 125–49, 154–58.)
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`None of the embodiments in the ’371 application discloses all of the steps recited in
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`claim 13.1 The challenged claims are not entitled to the benefit of foreign priority. See, e.g., In
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`re Ziegler, 992 F.2d 1197, 1200 (Fed. Cir. 1993).
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`1 The examples contained herein are illustrative, not limiting. Again, Patent Owner must
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`establish priority.
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`14
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`1.
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`The first, second, and fourth embodiments of the ’371 application do
`not disclose step g) of claim 13
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`Step g) of claim 13 recites, “removing the first resist pattern and then forming a second
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`resist pattern on the third insulating film and the mask pattern, the second resist pattern having
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`openings for forming contact holes.”
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`The first, second, and fourth embodiments do not teach “removing the first resist pattern”
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`before “forming a second resist pattern.” Each of those embodiments instead teaches forming the
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`second resist pattern before removing the first resist pattern. (See Ex. 1002, ¶¶125–27.)
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`The description of the first embodiment in the ’371 application states, “[T]he second
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`resist pattern 109 is formed without removing the first resist pattern 107.” (Ex. 1014, ¶0043; see
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`also ¶¶0050, 0056, Figs. 1(c), 5(a), 7(a).) The description of the second embodiment similarly
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`states that “a second resist pattern 209, having openings for the formation of contact holes is
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`formed by lithography on the second organic film 205 without removing the first resist pattern
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`207.” (Id., ¶0068; see also Fig. 9(c).) And the description of the fourth embodiment states that “a
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`second resist pattern 409 having openings for the formation of contact h