`
`Gada Kaisha IP Bridge 1 v. Broadcom Ltd., eta/., Case. No. 2:16-cv-134
`
`U.S. Patents No. 6,538,324, 6,197,696, RE41,980, 7,126,174, 8,354,726, and RE43,729
`
`Disputed Term
`
`Preliminary Construction
`United States Patent No. 7,126,174
`A. "a trench isolation region surrounding an
`Plain and ordinary meaning
`active area of a semiconductor substrate"
`
`('174 Pat., Cl. 1}
`
`(Reject Defendants' proposal of "lateral boundary)
`
`United States Patent No. 8,354, 726
`C. "formed on the side surface of the
`11covering the side surface of the [first/second]
`[first/second] gate electrode"
`gate electrode"
`
`('726 Pat., Cis. 1, 43)
`
`D. "a stress-containing insulating film
`containing internal stress and formed to
`cover t~ first gate electrode, the first side(cid:173)
`wall insllilating film, the auxiliary pattern, and
`the second side-wall insulating film"
`('726 Pat., cr. 1)
`
`11a stress-containing insulating film containing
`internal stress and also covering the first gate
`electrode, the first side-wall insulating film, the
`auxiliary pattern, and the second side-wall
`insulating film"
`
`E. "the first gate electrode is formed on the
`first active region through a gate insulating
`film including nitrogen"
`
`('726 Pat., Cis. 20, 43, 54)
`
`11the first gate electrode is formed on the first
`active region, with a nitrogen-containing gate
`insulating film between the first gate electrode
`and the first active region"
`
`F. "an interlayer insulating film on the silicide
`layer through the stress-containing insulating
`film"
`
`('726 Pat., Cis. 23, 57)
`
`11an interlayer insulating film formed on the
`silicide layer, with the stress-containing insulating
`film being between the interlayer insulating film
`and the silicide layer"
`
`Page 1/3
`
`IP Bridge Exhibit 2005
`GlobalFoundries v. IP Bridge
`IPR2017-00921
`Page 00001
`
`
`
`.
`United States Patent No. 6,197,696
`G. 11Using the [first resist pattern/second
`"using the [first resist pattern/second resist
`pattern and the mask pattern/patterned third
`resist pattern and the mask
`pattern/patterned third insulating film] as a
`insulating film] to define areas for etching"
`mask"
`
`('696 Pat., Cl. 13)
`
`United States Patent No. 6,538J324
`H. Preambles of Claims 1 and 5 of the '324
`The phrase 11[a] barrier film preventing diffusion of
`Patent
`copper from a copper wiring layer formed on a
`semiconductor substrate" in Claim 1 and the
`phrase 11prevents diffusion of copper from a
`copper wiring layer formed on a semiconductor
`substrate" in Claim 5 are not limiting.
`
`I. 11film"
`
`Plain and ordinary meaning
`
`('324 Pat., Cis. 1, 5)
`J. 11Said first film being composed of
`crystalline metal containing nitrogen therein"
`
`('324 Pat., Cis. 1, 5}
`
`"the first film is distinct from the second film, and
`the first film consists essentially of a mixture Of' .. ·
`crystalline or polycrystalline metal with nitrogen
`throughout"
`
`(Reject Defendants' proposal of 11closed-ended")
`
`11Said second film being composed of
`K.
`amorphous metal nitride"
`
`('324 Pat., Cis. 1, 5)
`
`"the second film is distinct from the first film, and
`the second film consists essentially of amorphous
`metal nitride"
`
`L.
`11[said barrier film being constituted of]
`common metal atomic species"
`
`('324 Pat., Cis. 1, 5)
`
`(Reject Defendants' proposal of II closed-ended")
`"the layers of the barrier film contain atoms of
`the same metal"
`
`M. ua surface protecting film"
`
`('980 Pat., Cis. 18, 35)
`
`N. "interlayer insulating film"
`
`('980 Pat., Cis. 18, 33, 35, SO)
`
`United States Patent No. RE41,980
`"a surface protecting film including distinct first
`and second dielectric films"
`
`"an insulating film located between but not
`within layers"
`
`Page 2/3
`
`IPR2017-00921 Page 00002
`
`
`
`0. "small dielectric constant"
`
`('980 Pat., Cis. 18, 35)
`
`''a dielectric constant less than that of silicon
`dioxide"
`
`P. "said bonding pad in said opening and said
`second dielectric film of said surface
`protecting film completely cover said first
`dielectric film so as not to expose said first
`dielectric film"
`
`('980 Pat., Ct. 18)
`
`"the bonding pad and the second dielectric film
`collectively cover the first dielectric film so that it
`is not exposed to above"
`
`Q. "wherein said bonding pad covers said
`opening"
`
`Plain and ordinary meaning
`
`('980 Pat., Ct. 35)
`
`United States Patent No. RE43,729
`R. "performed within one cycle"
`"performed within one clock cycle11
`
`('729 Pat., Ct. 21)
`
`Page 3/3
`
`IPR2017-00921 Page 00003
`
`
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