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`UNITED STATES PATENT AND TRADEMARK OFFICE
`_______________
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`BEFORE THE PATENT TRIAL AND APPEAL BOARD
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`_______________
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`GlobalFoundries U.S. Inc.
`
`Petitioner
`
`v.
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`Godo Kaisha IP Bridge 1
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`Patent Owner
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`Patent No. 6,197,696
`Filing Date: March 23, 1999
`Issue Date: March 6, 2001
`
`Title: METHOD FOR FORMING INTERCONNECTION STRUCTURE
`_______________
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`Inter Partes Review No. IPR2017-00921
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`_____________________________________________________________________
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`PETITION FOR INTER PARTES REVIEW
`UNDER 35 U.S.C. §§ 311-319 AND 37 C.F.R. § 42.100 ET SEQ.
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`Table of Contents
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`I.
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`II.
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`
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` The ’696 Patent ..................................................................................................................6 III.
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`Preliminary Statement .......................................................................................................1
`Technological Background ................................................................................................1
`A.
`Integrated Circuits and Interconnections .................................................................1
`B.
`Semiconductor Etching and Photolithography ........................................................4
`
`A.
`Description of the Challenged Claims .....................................................................6
`B.
`Examination of the ’696 Patent..............................................................................15
`C.
`The Challenged Claims Are Not Entitled to the Benefit of Foreign Priority ........16
`1.
`The first, second, and fourth embodiments of the ’371 application
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`do not disclose step g) of claim 13 ............................................................ 17
`The third, variant of the third, and fourth embodiments do not
`disclose step h) of claim 13 ....................................................................... 18
`The third, variant of the third, and fourth embodiments do not
`disclose step i) of claim 13 ........................................................................ 20
`Statement of Precise Relief Requested for Each Claim Challenged ...........................21
`A.
`Claims for Which Review is Requested ................................................................21
`B.
`Statutory Grounds of Challenge .............................................................................21
`C.
`Level of Ordinary Skill ..........................................................................................21
`D.
`Claim Construction ................................................................................................22
`Claims 13 and 15 of the ’696 Patent Are Unpatentable Over the Prior Art ..............22
`A.
`Disclosures of the Prior Art ...................................................................................22
`Grill (U.S. Patent No. 6,140,226) ............................................................. 22
`1.
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`Aoyama (U.S. Patent No. 5,592,024) ........................................................ 28
`2.
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`Grill Renders Claim 13 Obvious ...........................................................................30
`Claim 13 is obvious in view of Grill ........................................................ 30
`1.
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`The Combination of Grill and Aoyama Renders Claims 13 and 15 Obvious ........42
`A POSITA would have combined the relevant teachings of Grill
`1.
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`and Aoyama ............................................................................................... 42
`Claim 13 is obvious in view of the Grill-Aoyama combination ............... 46
`2.
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`Claim 15 is obvious in view of the Grill-Aoyama combination ............... 56
`3.
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` Mandatory Notices Under 37 C.F.R. §42.8 ....................................................................60
`A.
`Real Parties-In-Interest ..........................................................................................60
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`2.
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`3.
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`IV.
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`V.
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`B.
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`C.
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`VI.
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`1
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`Related Matters ......................................................................................................60
`B.
`Lead and Back-Up Counsel ...................................................................................62
`C.
`Service Information ...............................................................................................62
`D.
` Certification Under 37 C.F.R. §42.24(d) ........................................................................63 VII.
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` Payment of Fees................................................................................................................63
`VIII.
`Time for Filing Petition ...................................................................................................63
`IX.
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`Grounds for Standing ......................................................................................................63
`X.
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`XI.
` Conclusion ........................................................................................................................63
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`2
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`TABLE OF AUTHORITIES
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`FEDERAL CASES
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`Page(s)
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`Dynamic Drinkware, LLC v. Nat’l Graphics, Inc.,
`800 F.3d 1375 (Fed. Cir. 2015)................................................................................................24
`
`Exergen Corp. v. Wal-Mart Stores, Inc.,
`575 F.3d 1312 (Fed. Cir. 2009)..........................................................................................41, 54
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`Fiers v. Revel,
`984 F.2d 1164 (Fed. Cir. 1993)................................................................................................18
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`In re Ziegler,
`992 F.2d 1197 (Fed. Cir. 1993)................................................................................................19
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`KSR Int’l Co. v. Teleflex Inc.,
`550 U.S. 398 (2007) .................................................................................................................45
`
`Phillips v. AWH Corp.,
`415 F.3d 1303 (Fed. Cir. 2005) (en banc) ................................................................................24
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`Upsher-Smith Labs., Inc. v. PamLab L.L.C.,
`412 F.3d 1319 (Fed. Cir. 2005)................................................................................................31
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`REGULATORY CASES
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`Ariosa Diagnostics, Inc. v. Illumina, Inc.,
`IPR2014-01093, Paper 69 (Jan. 7, 2016) .................................................................................24
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`ADMINISTRATIVE PROCEEDINGS
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`IPR2016-01377, IPR2016-01378 ..................................................................................................60
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`LLC, PGR2015-00022, Paper 8 (Feb. 19, 2016) ...........................................................................18
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`FEDERAL STATUTES
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`35 U.S.C. ........................................................................................................................................23
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`35 U.S.C. § 103 ........................................................................................................................23, 61
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`35 U.S.C. §§ 311–319 ......................................................................................................................3
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`35 U.S.C. § 311(c) .........................................................................................................................62
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`1
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`FEDERAL REGULATIONS
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`37 C.F.R. § 42.8 .......................................................................................................................60, 62
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`37 C.F.R. § 42.24 ...........................................................................................................................62
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`37 C.F.R. § 42.24(D) .....................................................................................................................62
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`37 C.F.R. § 42.100(b) ....................................................................................................................24
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`37 C.F.R. § 42.100 et seq. ................................................................................................................3
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`37 C.F.R. § 42.101(b) ....................................................................................................................62
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`37 C.F.R. § 42.102(a).....................................................................................................................62
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`37 C.F.R. §§ 42.103(a) and 42.15(a) .............................................................................................62
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`37 C.F.R. § 42.104(a).....................................................................................................................62
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`37 C.F.R. § 42.108 .........................................................................................................................18
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`PATENTS
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`U.S. Patent No. 3,617,824................................................................................................................3
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`U.S. Patent No. 5,592,024..............................................................................................................29
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`U.S. Patent No. 6,140,226..............................................................................................................24
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`U.S. Patent No. 6,197,696...................................................................................................... passim
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`MISCELLANEOUS
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`Although Grill ................................................................................................................................25
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`Further, Grill ..................................................................................................................................32
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`Grill at 4:60– 5:8 and 7:16–8:8 ......................................................................................................31
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`Grill at 4:60–5:8 and 7:16–8:8 .......................................................................................................42
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`Grill’s Figure 5A............................................................................................................................25
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`Grill’s Figure 5A................................................................................................................32, 33, 34
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`Grill’s Figure 5B ............................................................................................................................35
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`Grill’s Figure 5C ............................................................................................................................36
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`Grill’s Figure 5D............................................................................................................................36
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`Grill’s Figure 5F ............................................................................................................................39
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`Grill’s Figures 5D and 5E ..............................................................................................................38
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`Grill’s Figures 5F and 5G ..............................................................................................................39
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`Petition Grill ..................................................................................................................................60
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`3
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`LIST OF EXHIBITS
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`Petition Exhibit 1001:
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`U.S. Patent No. 6,197,696 to Aoi et al.
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`Petition Exhibit 1002:
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`Expert Declaration of Dr. Bruce W. Smith, Ph.D.
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`Petition Exhibit 1003:
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`U.S. Patent No. 3,617,824 to Shinoda et al.
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`Petition Exhibit 1004:
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`U.S. Patent No. 3,838,442 to Humphreys.
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`Petition Exhibit 1005:
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`U.S. Patent No. 6,140,226 to Grill et al.
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`Petition Exhibit 1006:
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`U.S. Patent No. 5,635,423 to Huang et al.
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`Petition Exhibit 1007:
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`Petition Exhibit 1008:
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`Petition Exhibit 1009:
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`U.S. Patent No. 5,741,626 to Jain et al.
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`C. Akrout et al., “A 480-MHz Microprocessor in a 0.12µm
`Leff CMOS Technology with Copper Interconnects,” IEEE
`J. of Solid-State Circuits, Vol. 33, no. 11 (November 1998).
`
`J.N. Burghartz et al., “Monolithic Spiral Inductors
`Fabricated Using a VLSI Cu-Damascene Interconnect
`Technology and Low-Loss Substrates,” International
`Electron Devices Meeting (December 1996).
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`Petition Exhibit 1010:
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`Petition Exhibit 1011:
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`Petition Exhibit 1012:
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`U.S. Patent No. 6,100,184 to Zhao et al.
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`U.S. Patent No. 6,103,616 to Yu et al.
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`File History of U.S. Patent No. 6,197,696 to Aoi et al.
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`Petition Exhibit 1013:
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`Japanese Patent Application No. 10-079371 to Aoi.
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`Petition Exhibit 1014:
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`Certified Translation of Japanese Patent Application No.
`10-079371 to Aoi.
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`Petition Exhibit 1015:
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`Japanese Patent Application No. 11-075519 to Aoi.
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`Petition Exhibit 1016:
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`Certified Translation of Japanese Patent Application No.
`11-075519 to Aoi.
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`Petition Exhibit 1017:
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`U.S. Provisional Patent Application No. 60/071,628.
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`Petition Exhibit 1018:
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`U.S. Patent No. 5,592,024 to Aoyama et al.
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`1
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`I.
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`Preliminary Statement
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`U.S. Patent No. 6,197,696 (Ex. 1001) is directed to methods for forming integrated
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`circuit “interconnects,” which link components in a microchip. In particular, the ’696 patent is
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`directed to common “dual damascene” processes for forming interconnects.
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`Supported by the Expert Declaration of Bruce Smith, Ph.D., (Ex. 1002), this Petition
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`establishes that challenged claims 13 and 15 are unpatentable. Rather than defining novel or
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`nonobvious subject matter, the challenged claims recite well-known processes for making well-
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`known structures. Petitioner respectfully requests inter partes review under 35 U.S.C. §§311–
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`319 and 37 C.F.R. §42.100 et seq., and cancellation of the challenged claims.
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`II.
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`
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`Technological Background
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`A.
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`Integrated Circuits and Interconnections
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`Integrated circuits contain millions of discrete semiconductor devices electrically
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`connected by “interconnections,” or “interconnects,” to form circuits. U.S. Patent No. 3,617,824
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`to Shinoda et al. (Ex. 1003), which dates to 1965, provides an early example. (Ex. 1003, 4:30–
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`73, Figs. 6, 7 (below with highlights and annotations).)
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`Interconnects typically have “via” portions extending between the planes of adjacent
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`layers to provide electrical connections between those layers. (Ex. 1002, ¶33.) Interconnects also
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`typically have “trench” patterns, which act as wires to define circuits by linking the vias
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`appropriately. These interconnect schemes were common years before the application for the
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`’696 patent was filed. (See, e.g., Ex. 1004, Abstract, 1:54–2:6, 8:19–54, Figs. 6, 6A (below with
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`highlights), 7, 7A.)
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`Multiple levels of interconnects are typical. (Ex. 1002, ¶34.) Examples of this type of
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`wiring scheme, which was also common years before the time the application for the ’696 patent
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`was filed, appear below. (Ex. 1008, 1–4, Fig. 2; Ex. 1009, 1–2, Fig. 2; Ex. 1002, ¶34.)
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`In a dual damascene process, such the ones as described by the ’696 patent, the via and
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`trench structures are formed during the same process. (See Ex. 1009, 1; Ex. 1002, ¶35.) The via
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`and trench patterns are etched into insulating material and then filled with metal and polished flat.
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`(Ex. 1002, ¶35.) Like other interconnect structures, dual damascene processes result in vias that
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`vertically link metallization levels and trenches that link the vias together horizontally to form
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`circuits. (Ex. 1005, 1:45–48, 3:33–36; Ex. 1006, Abstract, 2:61–3:2, 3:54–57; Ex. 1007, 2:15–
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`20.) Examples appear below with annotations. (Ex. 1005, Fig. 1L; Ex. 1006, Figs. 6(c), 9; Ex.
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`1007, Fig. 5.)
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`B.
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`Semiconductor Etching and Photolithography
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`Two processing technologies that can create patterns in a semiconductor wafer are
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`photolithography and etching. In photolithography, a chemical called photoresist uniformly
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`coats the surface of the semiconductor wafer. (Ex. 1002, ¶37.) Photoresist is sensitive to light
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`and will change its molecular structure when illuminated under the right conditions. (Id.) A
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`photomask, which is transparent in some regions and opaque in others, contains a pattern that
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`can be transferred to the photoresist on the surface of the wafer. (Id., ¶38.) After the photomask
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`is aligned, the photoresist is illuminated through the photomask. (Id.) The exposed photoresist is
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`altered by the light, and any photoresist not part of the pattern can be removed with a chemical
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`called a “developer.” (Id., ¶39.)
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`The processed wafer retains the patterned photoresist layer, which can be used to pattern
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`material underneath the photoresist. (Id., ¶39.) Schematic representations of photolithography
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`appear below. (Id., ¶40.)
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`A patterned photoresist layer can serve as a mask during an “etch” process. In etching,
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`the surface of the processed wafer (semiconductor substrate and/or overlying layers) is exposed
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`to corrosive chemicals to remove certain portions of the wafer. (Id., ¶42.) After etching, the
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`photoresist may then be “stripped” (removed) from the wafer by another chemical treatment.
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`(Id., ¶43.) In some cases, the etching process itself may even remove the photoresist. A
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`representation of photolithography and etching appears below.
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`(Id.)
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`An etch that attacks all exposed materials is called a non-selective etch, whereas an etch
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`that attacks certain material compositions more than others is called a selective etch. (Id., ¶44.)
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`An etch that attacks a material in all directions is called isotropic, whereas an etch that attacks in
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`a preferred direction (often perpendicular to the surface of the wafer) is called anisotropic. (Id.,
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`¶45.) An etch that uses a liquid etching agent is called a “wet” etch, whereas an etch that does
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`not use a liquid etching agent (typically using ionized gas, called a “plasma”) is called a “dry”
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`etch. (Id., ¶46.) Dual damascene processes typically use selective, anisotropic, dry etching. (Id.,
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`¶47; see also, e.g., Ex. 1006, 2:61–63; Ex. 1010, 2:44–48; Ex. 1011, 4:9–12.)
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` The ’696 Patent
`III.
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`A.
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`Description of the Challenged Claims
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`This Petition challenges the patentability of claims 13 and 15 of the ’696 patent.
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`Independent claim 13 recites “[a] method for forming an interconnection structure,” and claim
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`15 depends from claim 13. (Ex. 1001, 34:58–36:18.) As explained further below, claim 13 reads
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`on both the fifth and sixth embodiments of the ’696 patent, including the modified fifth and sixth
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`embodiments.1 (Ex. 1002, ¶¶48–115; see also Ex. 1001, 22:47–29:60, Figs. 21(a)–37(b).) The
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`steps of claim 13 are described below with reference to these embodiments. The declaration of
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`Dr. Smith also describes the challenged claims and the embodiments of the ’696 patent. (See Ex.
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`1002, ¶¶48–121.)
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`1.
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`step a) of Claim 13
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`Step a) of claim 13 recites “forming a first insulating film [504, 603] over lower-level
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`metal interconnects [501, 601].”
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`In the fifth embodiment, the claimed first insulating film is element 504 [or 554], located
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`over lower-level interconnects 501 and made of silicon dioxide (an insulating film). (Ex. 1001,
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`22:52–62, 24:60–25:3, Figs. 21(a), 24(a); Ex. 1002, ¶¶51–52.) Similarly, in the sixth
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`1 The modified fifth and sixth embodiments differ from their unmodified counterparts
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`only in that the width of the contact hole in the second resist pattern is larger than the width of
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`the wiring grooves. (See Ex. 1001, 25:29–34, 30:51–56, Figs. 25(b), 27(b), 34(b), 36, 37(a)–(b).)
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`embodiment the claimed first insulating film is element 603 [or 653], located over lower-level
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`interconnects 601 [or 651] and formed of an insulating organic film. (Ex. 1001, 28:1–9, 30:1–11,
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`Figs. 30(a), 33(a); Ex. 1002, ¶¶53–54.) Examples from the ’696 patent of step a) appear with
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`highlights in the Figures below. (Ex. 1001, 22:52–23:24, 28:1–36, Figs. 21(a), 30(a); Ex. 1002,
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`¶¶50–55.)
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`2.
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`step b) of Claim 13
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`Step b) of claim 13 recites “forming a second insulating film [505, 604], having a
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`different composition than that of the first insulating film, over the first insulating film [504,
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`603].”
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`In the fifth embodiment, the composition of the claimed second insulating film 505 [or
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`555] differs from the composition of the claimed first insulating film 504 [or 554]. Second
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`insulating film 505 [or 555] is an organic insulating film, whereas first insulating film 504 [or
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`554] is silicon dioxide. (Ex. 1001, 22:60–64, 25:1–6, Figs. 21(a), 24(a); Ex. 1002, ¶¶57–58.) In
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`the sixth embodiment, the composition of the claimed second insulating film 604 [or 654] differs
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`from the composition of the claimed first insulating film 603 [or 653]. Second insulating film
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`604 [or 654] is silicon dioxide, whereas first insulating film 603 [or 653] is an organic film. (Ex.
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`1001, 28: 6–11, 30:6–11, Figs. 30(a), 33(a); Ex. 1002, ¶¶59– 60.) Examples from the ’696
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`patent of step b) appear with highlights in the Figures below. (Ex. 1001, 22:52–23:24, 28:1–36,
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`Figs. 21(a), 30(a); Ex. 1002, ¶¶56–61.)
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`3.
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`step c) of Claim 13
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`Step c) of claim 13 recites “forming a third insulating film [506, 605], having a different
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`composition than that of the second insulating film, over the second insulating film [505, 604].”
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`In the fifth embodiment, the composition of the claimed third insulating film 506 [or 556]
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`differs from the composition of the claimed second insulating film 505 [or 555]. Third insulating
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`film 506 [or 556] is silicon dioxide (an insulating film), whereas second insulating film 505 [or
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`555] is an organic insulating film. (Ex. 1001, 22:62–67, 25:3–9, Figs. 21(a), 24(a); Ex. 1002,
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`¶¶63–64.) In the sixth embodiment, the composition of the claimed third insulating film 605 [or
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`655] differs from the composition of the claimed second insulating film 604 [or 654]. Third
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`insulating film 605 [or 655] is an organic insulating film, whereas second insulating film 604 [or
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`654] is silicon dioxide. (Ex. 1001, 28: 9–13, 30:9–14, Figs. 30(a), 33(a); Ex. 1002, ¶¶65–66.)
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`Examples from the ’696 patent of step c) appear with highlights in the Figures below. (Ex. 1001,
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`22:52–23:24, 28:1–36, Figs. 21(a), 30(a); Ex. 1002, ¶¶62–67.)
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`4.
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`step d) of Claim 13
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`Step d) of claim 13 recites “forming a thin film [507, 606] over the third insulating film
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`[506, 605].”
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`In the fifth embodiment, “a titanium nitride film 507[/557] (thin film) is deposited to be
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`50 nm thick.” (Ex. 1001, 23:1–3, 25:9–11, Figs. 21(a), 24(a); Ex. 1002, ¶¶69–70.) Similarly, in
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`the sixth embodiment, “a titanium nitride film 606[/656] (thin film) is deposited to be 50 nm
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`thick.” (Ex. 1001, 28:14–16, 30:14–16, Figs. 30(a), 33(a); Ex. 1002, ¶¶71–72.) Examples from the
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`’696 patent of step d) appear with highlights in the Figures below. (Ex. 1001, 22:52–23:24, 28:1–
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`36, Figs. 21(a), 30(a); Ex. 1002, ¶¶68–73.)
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`5.
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`step e) of Claim 13
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`Step e) of claim 13 recites “forming a first resist pattern [508, 607] on the thin film [507,
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`606], the first resist pattern having openings for forming wiring grooves.”
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`In the fifth embodiment, “a first resist pattern 508[/558], having openings for forming
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`wiring grooves, is formed by lithography on the titanium nitride film 507[/557].” (Ex. 1001,
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`23:25–27, 25:19–21, Figs. 21(b), 24(b); Ex. 1002, ¶¶75– 76.) Similarly, in the sixth embodiment
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`“a first resist pattern 607[/657], having openings for forming wiring grooves, is formed by
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`lithography on the titanium nitride film 606[/656].” (Ex. 1001, 28:37–39, 30:37–39, Figs. 30(b),
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`33(b); Ex. 1002, ¶¶77–78.) Examples from the ’696 patent of step e) appear with highlights in
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`the Figures below. (Ex. 1001, 23:25–32, 28:37–43, Figs. 21(b), 30(b); Ex. 1002, ¶¶74–79.)
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`6.
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`Step f) of Claim 13
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`Step f) of claim 13 recites “etching the thin film [507, 606] using the first resist pattern
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`[508, 607] as a mask, thereby forming a mask pattern [509, 608] out of the thin film to have the
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`openings for forming wiring grooves.”
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`In the fifth embodiment, “the titanium nitride film 507[/557] is dry-etched using the first
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`resist pattern 508[/558] as a mask, thereby forming a mask pattern 509[/559], having openings
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`for forming wiring grooves, out of the titanium nitride film 507[/557].” (Ex. 1001, 23:27–32,
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`25:21–25, Figs. 21(c), 24(c); Ex. 1002, ¶¶81–82.) Similarly, in the sixth embodiment “the
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`titanium nitride film 606[/656] is dry-etched using the first resist pattern 607[/657] as a mask,
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`thereby forming a mask pattern 608[/658], having openings for forming wiring grooves, out of
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`the titanium nitride film 606[/656].” (Ex. 1001, 28:39–43, 30:39–43, Figs. 30(c), 33(c); Ex.
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`1002, ¶¶83–84.) Examples from the ’696 patent of step f) appear with highlights in the Figures
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`below. (Ex. 1001, 23:25–32, 28:37–43, Figs. 21(c), 30(c); Ex. 1002, ¶¶80–85.)
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`7.
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`Step g) of Claim 13
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`Step g) of claim 13 recites “removing the first resist pattern [508, 607] and then forming
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`a second resist pattern [510, 609] on the third insulating film [506, 605] and the mask pattern
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`[509, 608], the second resist pattern having openings for forming contact holes.”
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`In the fifth embodiment, “the first resist pattern 508[/558] is removed.” (Ex. 1001, 23:33–
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`34, 25:26–27, Figs. 22(a), 25(a), 27(a).) “Then, as shown in FIG. 22(b)[/FIG. 25(b)], a second resist
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`pattern 510[/560], having openings for forming contact holes, is formed by lithography on the mask
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`pattern 509[/559].” (Ex. 1001, 23:40–42, 25:27–35, Figs. 22(b), 25(b); Ex. 1002, ¶¶87–88.)
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`Similarly, in the sixth embodiment, “the first resist pattern 607[/657] is removed.” (Ex. 1001,
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`28:44–46, 30:44–46, Figs. 31(a), 34(a).) “Then, as shown in FIG. 31(b)[/FIG. 34(b)], a second
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`resist pattern 609[/659], having openings for forming contact holes, is formed by lithography on the
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`mask pattern 608[/658].” (Ex. 1001, 28:49–51, 30:49–57, Figs. 31(b), 34(b); Ex. 1002, ¶¶89–90.)
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`Examples from the ’696 patent of step g) appear with highlights in the Figures below. (Ex. 1001,
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`23:33–42, 28:44–51, Figs. 22(a), 22(b), 31(a), 31(b); Ex. 1002, ¶¶86–91.)
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`8.
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`step h) of Claim 13
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`Step h) of claim 13 recites “dry-etching the third insulating film [506, 605] using the
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`second resist pattern [510, 609] and the mask pattern [509, 608] as a mask, thereby patterning the
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`third insulating film to have the openings for forming contact holes.”
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`In the fifth embodiment, “the second silicon dioxide film 506[/556] is dry-etched using
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`the second resist pattern 510[/560] and the mask pattern 509[/559] as a mask, thereby forming a
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`patterned second silicon dioxide film 506A[/556A] having openings for forming contact holes.”
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`(Ex. 1001, 23:42–46, 25:36–41, Figs. 22(c), 25(c), 27(b); Ex. 1002, ¶¶93–94.) Similarly, in the
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`sixth embodiment, “the second organic film 605[/655] is dry-etched using the second resist
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`pattern 609[/659] and the mask pattern 608[/658] as a mask, thereby forming a patterned second
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`organic film 605A[/655A] having openings for forming contact holes.” (Ex. 1001, 28:51–55,
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`30:58–62, Figs. 31(c), 34(c); Ex. 1002, ¶¶95–96.) Examples from the ’696 patent of step h)
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`appear with highlights in the Figures below. (Ex. 1001, 23:42–46, 28:51–55, Figs. 22(c), 31(c);
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`Ex. 1002, ¶¶92–97.)
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`9.
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`step i) of Claim 13
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`Step i) of claim 13 recites “dry-etching the second insulating film [505, 604] using the
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`patterned third insulating film [506A, 605A] as a mask, thereby patterning the second insulating
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`film to have the openings for forming contact holes.”
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`In the fifth embodiment, “the second organic film 505[/555] is dry-etched using the
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`patterned second silicon dioxide film 506A[/556A] as a mask, thereby forming a patterned
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`second organic film 505A[/555A] having openings for forming contact holes.” (Ex. 1001, 23:47–
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`51, 25:66–26:3, Figs. 23(a), 26(a), 28(a); Ex. 1002, ¶¶99–100.) Similarly, in the sixth
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`embodiment, “the silicon dioxide film 604[/654] is dry-etched using the patterned second
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`organic film 605A[/655A] as a mask, thereby forming a patterned silicon dioxide film
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`604A[/654A] having openings for forming contact holes.” (Ex. 1001, 29:1–5, 31:7–11, Figs.
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`32(a), 35(a); Ex. 1002, ¶¶101–02.) Examples from the ’696 patent of step i) appear with
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`highlights in the Figures below. (Ex. 1001, 23:47–51, 29:1– 5, Figs. 23(a), 32(a); Ex. 1002,
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`¶¶98–103.)
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`10.
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`step j) of Claim 13
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`Step j) of claim 13 recites “dry-etching the patterned third insulating film [506A, 605A]
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`and the first insulating film [504, 603] using the mask pattern [509, 608] and the patterned
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`second insulating film [505A, 604A] as respective masks, thereby forming wiring grooves and
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`contact holes in the patterned third insulating film and the first insulating film, respectively.”
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`In the fifth embodiment, “the patterned second silicon dioxide film 506A[/556A] and the
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`first silicon dioxide film 504[/554] are dry-etched using the mask pattern 509[/559] and the
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`patterned second organic film 505A[/555A] as respective masks, thereby forming a patterned
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`13
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`second silicon dioxide film 506B[/556B] having openings for forming wiring grooves and a
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`patterned first silicon dioxide film 504A[/554A] having openings for forming contact holes.”
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`(Ex. 1001, 23:66–24:6, 26:15–22, Figs. 23(b), 26(b), 28(b); Ex. 1002, ¶¶105–06.) Similarly, in
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`the sixth embodiment, “the patterned second organic film 605A[/655A] and the first organic film
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`603[/653] are dry-etched using the mask pattern 608[/658] and the patterned silicon dioxide film
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`604A[/654A] as respective masks, thereby forming a patterned second organic film 605B[/655B]
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`having wiring grooves 610[/660] and a patterned first organic film 603A[/653A] having contact
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`holes 611[/661].” (Ex. 1001, 29:6–12, 31:12–18, Figs. 32(b), 35(b); Ex. 1002, ¶¶107–08.)
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`Examples from the ’696 patent of step j) appear with highlights in the Figures below.
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`(Ex. 1001, 23:66–24:6, 29:6–12, Figs. 23(b), 32(b); Ex. 1002, ¶¶104–09.)
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`11.
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`step k) of Claim 13
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`Step k) of claim 13 recites “filling in the wiring grooves and the contact holes with a
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`metal film, thereby forming upper-level metal interconnects [513, 612] and contacts [514, 613]
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`connecting the lower- and upper-level metal interconnects together.”
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`In the fifth embodiment, “a metal film is deposited over the entire surface of the substrate
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`to completely fill in the contact holes 512[/562] and the wiring grooves 511[/561].” (Ex. 1001,
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`24:22–24, 26:38–41, Figs. 23(d), 26(d), 29(b) .) “As a result, second metal interconnects
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`513[/563] and contacts 514[/564], connecting the first and second metal interconnects 501[/551]
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`and 513[/563] together, are formed.” (Ex. 1001, 24:33–35, 26:44–47; Ex. 1002, ¶¶111–12.)
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`Similarly, in the sixth embodiment, “a metal film is deposited over the entire surface of the
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`substrate to completely fill in the contact holes 611[/661] and the wiring grooves 610[/660].”
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`(Ex. 1001, 29:24–26, 31:30–32, Figs. 32(c), 35(c).) “As a result, second metal interconnects
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`612[/662] and contacts 613[/663], connecting the first and second metal interconnects 601[/651]
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`and 612[/662] together, are formed.” (Ex. 1001, 29:35–38, 31:41–44; Ex. 1002, ¶¶113–14.)
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`Examples from the ’696 patent of step k) appear with highlights in the Figures below. (Ex. 1001,
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`24:22–24, 29:24–39, Figs. 23(d), 32(c); Ex. 1002, ¶¶110–15.)
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`12.
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`Dependent Claim 15
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`Claim 15 depends from claim 13 and further recites “wherein a size of the openings of
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`the second resist pattern for forming contact holes is larger than a designed size of the contact
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`holes in a direction vertical to a direction in which the upper-level metal interconnects extend.”
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`(See Ex. 1001, 23:40–42, 25:26–65, 26:12–60, 28:49–51, 30:52–56, 31:49–32:6, Figs. 22(b),
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`25(b), 31(b), 34(b), 27(b), 36, 37(a); Ex. 1002, ¶¶116–21.)
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`B.
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`Examination of the ’696 Patent
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`The application for the ’696 patent was filed March 23, 1999, and claims foreign priority
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`to Japanese Patent Application No. 10-079371, filed March 26, 1998.
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`The original application for the ’696 patent included 15 claims. (Ex. 1012, 150–58.) The
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`15
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`Examiner issued a first-action Notice of Allowability, accompanied by a statement of reasons for
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`allowance, stating s