`
`FILE HISTORY
`US 6,538,324
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`6,538,324
`PATENT:
`INVENTORS: Tagami, Masayoshi
`Hayashi, Yoshihiro
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`TITLE:
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`Multi-layered wiring layer and method of
`fabricating the same
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`APPLICATION
`NO:
`FILED:
`ISSUED:
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`US2000596415A
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`19 JUN 2000
`25 MAR 2003
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`COMPILED:
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`22 MAY 2015
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`TSMC Exhibit 1002
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`Page 1 of 333
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`DISCLAIMER
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`(date)
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`Co The term ofthis patent
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`“subsequentto
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`_has been disclaimed.
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`{.] ‘Tne term of this patentshall
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`TECHNOLOGY CENTER 2800
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`| “TERMINAL
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`ICATION CROSS REFERENCE(S)
`(Primary Examiner) Theinformation disclosed herein mayberestricted. ‘Unauthorized disclosure may be prohibited by the United States Code Title 35, Sections 122, 181 and 368.
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`monthsof
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`this patent have been disclaimed.
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`WARNING:
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`FILEDwith: [_] Disk (CRF)
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`MULTI-LAYERED WIRING LAYER AND METHOD OF FABRICATING THE SAME
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`Transaction History
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`Transaction Description
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`Information Disclosure Statement(IDS) Filed
`6/19/2000|
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`8/16/2000| Application Dispatched from OIPE
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`3/6/2003|Issue Notification Mailed
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`Error
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`US006538324B1
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`«2) United States Patent
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`Tagamietal.
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`(10) Patent No:
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`(45) Date of Patent:
`
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`US 6,538,324 B1
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`Mar.25, 2003
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`°
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`OTHER PUBLICATIONS
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`Semiconductor World Nobuyoshi Awaya, Feb. 1998, pp.
`91-96.
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`Kee—Won Kwonetal., “Characteristics of Ta As An Under-
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`layer for Cu Interconnects”, Advanced Metallization and
`
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`Interconnect Systems for ULSIApplications in 1997, 1998,
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`pp. 711-716.
`:
`M. T- Wang,et al., “Barrier Properties of Very Thin Ta and
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`TaN Layers Against Copper Diffusion”, Journal Electro-
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`chemical Society, Jul. 1998, pp. 2538-2545.
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`D. Denning,et al., An Inlaid CVD Cu Based Integration for
`
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`Sub 0.25um Technology, 1998 Symposium on VLSI Tech-
`nology Digest of Technical Papers, 1998, pp. 22-23.
`
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`.
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`
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`* cited by examiner
`
`_
`
`Primary Examiner—Tom Thomas
`
`
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`Assistant Examiner—Hung Kim Vu
`
`
`(74) Attorney, Agent, or Firm—Scully, Scott, Murphy &
`
`
`
`
`
`
`
`Presser
`©7)
`ABSTRACT
`There is provided a barrier film preventing diffusion of
`
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`copper from a copper wiring layer formed on a semicon-
`
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`ductor substrate. The barrier film has a multi-layered struc-
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`ture of first and second films wherein the first
`film is
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`composed of crystalline metal containing nitrogen therein,
`
`
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`and the secondfilm is composed of amorphous metalnitride.
`
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`The barrier film is constituted of common metal atomic
`
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`species. The barrier film prevents copper diffusion from a
`
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`copper wiring layer into a semiconductor device, and has
`
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`sufficient adhesion characteristic to both a copper film and
`
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`an interlayer insulating film.
`
`
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`
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`
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`10 Claims, 20 Drawing Sheets
`
`A
`
`N
`
`aW
`
`Z,ZZ
`
`(54) MULTI-LAYERED WIRING LAYER AND
`
`
`
`
`METHOD OF FABRICATING THE SAME
`
`
`
`
`
`(75)
`
`Inventors: Masayoshi Tagami, Tokyo (JP);
`
`
`
`
`Yoshihiro Hayashi, Tokyo (JP)
`
`
`
`
`(73) Assignee: NEC Corporation, Tokyo GP)
`
`
`
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`
`
`(*) Notice:
`
`
`
`Subjectto any disclaimer, the term of this
`
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`
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`patent is extended or adjusted under 35.
`
`
`
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`
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`U.S.C. 154(b) by 0 days.
`
`
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`.
`
`.
`
`(21) Appl. No.: 09/596,415
`
`
`
`(22)
`Filed:
`Jun.
`19, 2000
`:
`-19,
`
`
`
`
`
`
`
`(30)
`_ Foreign Application Priority Data
`(IP)
`esseseesscssesvecssesstssssassessasneecs 11-214110
`Jun. 24,1999
`
`
`
`
`
`4
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`
`
`Int. C1? ee cseee HOLL 23/48; HO1L 23/52
`(51)
`
`
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`
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`
`
`(52) U.S. Ch. cic cecersnseeereeeeseens 257/751; 257/762
`
`
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`
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`
`
`(58) Field: of Search .........ceece eetecene 257/751, 752,
`257/153, 758, 762, 773; 438/626, 627,
`
`
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`
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`628, 643, 644, 645
`
`
`
`
`(56)
`
`i
`3p
`JP
`JP
`
`:
`:
`
`References Cited
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`5,668,411 A :
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`9.64044
`3/1997
`9-293690
`* 11/1997
`10-256256
`9/1998
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`Page 15 of 333
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`U.S. Patent —
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`Mar. 25, 2003
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`‘Sheet 1 of 20
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`US 6,538,324 B1
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`FIG. 1
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`FIG. 2
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`(Prior Art)
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`FIG.3
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`(Prior Art)
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`Page 16 of 333
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`Mar. 25,2003
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`Mar. 25,2003
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`US. 6,538,324 BL
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`Mar. 25,2003
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`Sheet 4 of 20
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`US 6,538,324 B1
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`(%)
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`Page 19 of 333
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`Page 19 of 333
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`Page 21 of 333
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`U.S. Patent — Mar. 25,2003—Sheet 7 of 20.
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`Page 22 of 333
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`Mar. 25,2003
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`Page 23 of 333
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`Page 23 of 333
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`Page 24 of 333
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`Mar.25,2003
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`Page 25 of 333
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`Page 25 of 333
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`“Sheet 11 of 20.~—-«US 6,538,324 BI
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`U.S. Patent.
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`Mar.25, 2003
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`Page 26 of 333
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`Mar.25, 2003
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`US 6,538,324 B1
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`Sheet 12 of20.
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`Page 29 of 333
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`Page 33 of 333
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`U.S. Patent
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`Mar. 25,2003
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`Sheet 19of 20
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`US 6,538,324 B1
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`(atoms/cm4)
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`Page 34 of 333
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`Page 34 of 333
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`Mar. 25,2003
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`Sheet 20 of 20»
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`US 6,538,324 B1
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`US 6,538,324 B1
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`MULTI-LAYERED WIRING LAYER AND
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`BACKGROUND OF THE INVENTION
`surfaces thereof with the diffusion-barrier film in order to
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`prevent copper diffusion from uncovered region.
`1. Field of the Invention
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`Thereafter, a copperfilm is depositedfilling the recess and
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`barrier film which prevents copper diffusion from such a
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`selected regions by CMP. Thus, a copper wiring layer is
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`copper wiring layer.
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`completed.
`2. Description of the Related Art
`As will be obviousto those skilled in the art, the diffusion-
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`As a semiconductor device has been designed io be
`barrier film is required to have high coverage as well as
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`smaller and smaller in size, wiring delay exerts greater
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`influence on a silicon ULSI device. As a result, though a
`copper.
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`wiring layer has been composed of aluminum, itis necessary
`The diffusion-barrier film is composed, for instance, of
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`10 compose a wiring layer of copper in place of aluminum.
`refractive metal such as tungsten (W),
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`Resistivity of copper is equal to about 70% of resistivity
`titanium (Ti), or nitride of such refractive metal such as
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`of aluminum. However, since copper does not form passive
`tungstennitride (WN), titanium nitride (TiN) or tantalum
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`state composedof an oxide film, at a surface thereof, unlike
`nitride (TaN).
`
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`aluminum, copper is more corrosive than aluminum.
`As.explained in Prior Art 2, for instance, a tantalum (Ta)
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`In addition, since copper has a high diffusion rate in both
`barrier film bas high adhesion with a copperfilm formed on
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`the tantalum barrier film by sputtering, ensuring improve-
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`ment:in crystallinity of the copper film. However, since
`MOSFETformed onasilicon substrate, copper would
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`25.
`induce reduction in carrier lifetime.
`copper is diffused into the tantalum film,
`it would be
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`necessary for the tantalum barrier film formed below the
`Hence,
`it is absolutely necessary for a semiconductor
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`copperfilm, to have a thickness of 50 nm or greater.
`device having a. copper wiring layer to have a diffusion-
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`Prior Art 4 reports that if a copper film is. formed on a
`barrier
`film for preventing diffusion of copper into an
`
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`tantalum film by CVD, fluorine(F)se‘gregates at aninterface
`interlayer insulating film formed between copper wiring
`
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`between the copper film and TaN,resulting in degradation in
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`layers. In addition, since such a diffusion-barrier film has to
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`adhesion therebetween.
`have high adhesion characteristic to both an interlayer
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`Prior Art 3 reportsthat a crystalline TaNbarrier film
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`insulating film and a copper wiring layer in order to keep
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`oriented in directions of (200) and (111) can prevent copper
`reliability in wiring.
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`diffusion mere highly than acrystalline Ta barrier Alm.
`Thus, there have been made many’ suggestions ‘about a
`
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`35
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`As an solution to enhance a characteristic of preventing
`structure of a barrier metal layer and a method offabricating
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`copper diffusion and adhesion to copper, a multi-layered
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`
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`the same, in order to prevent copper diffusion form a copper
`
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`structure of a metal film and a metal nitride film has been
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`wiring layer.
`
`suggested.
`For instance, a structure of a barrier metal
`layer 1S
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`For instance, the above-mentioned Japanese Patent Appli-
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`suggested iin the following articles: »
`40
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`cation No. 10-330938 has suggested a method offabricating
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`(a) Semiconductor World, Nobuyoshi Awaya, February |
`a multi-layered barrier film including. a titanium film and .
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`1998, pp. 91-96 (hereinafter,referred to as PriorArt 1);
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`formed by sputtering.
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`Asillustratediin FIG. 1, in accordance with the suggested
`(b) Advanced Metallization and Interconnect Systemsfor
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`ULSI Applicaticns in 1997, Kee-Won Kwonet al.,
`into a sputter
`method, only an argon gas is. introduced:
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`1998, pp. 711-716 (hereinafter, referred to Prior Art 2);
`chamber to thereby forma titanium film 1. Then, a nitrogen
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`thin
`gas is introduced into ‘the | sputter, chamber, and a
` (c) Journal Electrochemical Society, M.T. Wangetal.,
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`titanium nitride film 2 is formed on the titanium film 1
`July 1998, pp. 2538-2545 (hereinafter, referred to as
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`auxiliarily making use of reaction between titanium and
`Prior Art 3); and
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`nitrogen... Thus,
`there is formed-a multi-layered barrier
`(d) 1998: Symposium on ‘VLSI ‘Technology. Digest of
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`‘structure 3 comprised ofthe titanium film 1 and the thin
`. Technical Papers, D. Denning et al., 1998, pp. 22-23.
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`titanium nitride film 2.
`In addition, a ‘structure of a barrier metal layer and a
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`In the method, a metal oxide film formed on an underlying
`method of fabricating the same both for preventing copper
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`wiringfilmis removed by argon plasmaprior to-carrying out
`‘diffusion is suggested also in Japanese Unexamined Patent
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`Publications 8-139092, 8-274098, 9-64044 and 10-256256,
`sputtering.
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`However,
`the conventional barrier film for preventing
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`and Japanese Patent Application No. 10-330938. Herein,
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`copper diffusion is accormpanied with the following prob-
`Japanese Patent ApplicationNo. 10-330938 is not published
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`lems.
`yet, and hence does not constitute prior art to the present
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`Thefirst problem is that it is quite difficult to make a
`invention. However,it is explained in the specification only
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`diffusion-barrier film Kave both a characteristic of prevent-
`for better understanding of the present invention. The appli-
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`ing copper diffusion and a sufficient adhesive force with
`cant does not’ admit that Japanese Patent Application No.
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`copper..
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`10-330938 constitutes prior art to the present invedtion.
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`- As illustrated in FIG. 2,it is now assumedto form a metal
`It is quite difficult todry-etch copper, and hence, a copper
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`wiring layer is formed generally by chemical mechanical
`film 5 having a crystallized pillar structure, on a semicon-
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`ductor substrate 4. In the metal film 5, a lot of grains each
`polishing (CMP).
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`65
`Specifically, a copper wiring layer is formed as follows,
`comprised of individual crystals, and grain boundaries 7
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`’ each defining an interface between the grains 6 exist
`An insulating film is formed on’an underlying copper
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`throughout the metalfilm 5, that is, from an upper surface to
`wiring layer. Then,
`the insulating film is formed with a
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`_
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`Page 36 of 333
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`Page 36 of 333
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`US 6,538,324 B1
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`4
`3
`The third problem relates to coverage ofa film formed by
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`a bottom of the metal film 5. The grain boundaries 7