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`CODEN: JAPIAU
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`Journal of
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`ISSN: 0021-8979
`
`APPLIED PHYSICS
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`Steven J. Rothman, Editor
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`Lester Guttman, Consulting Editor
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`Robert C. Birtcher, Gian P. Felcher, Robert E. Holland, and John N. Mundy, Associate Editors
`Catherine M. Dial, Assistant to the Editor
`
`Term ending 31 December 1992
`
`David K. Biegelsen
`Robert L. Byer
`Frans Spaepen
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`Editorial Board
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`Term ending 31 December 1993
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`Term ending 31 December 1994
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`L. Eric Cross
`D. K. Finnemore
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`Frans W. Saris
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`

`
`Journal of APPLIED PHYSICS
`
`Vol. 71, No.11, 1 June 1992
`
`APPLIED PHYSICS REVIEWS
`
`R23 Quantitative emission microscopy
`
`J. Kolzer, C. Boit, A. Dallmann, G.
`Deboy, J. Otto. D. Weinmann
`
`GENERAL PHYSICS: Nuclear, Atomic, and Molecular (PACS 01-36)
`5303 Representation of tails of periodic and infinite-range signals: Towards a
`treatment for truncation
`
`A. C. Vermeulen. F1. Delhez, Th. H.
`de Keijser, E. J. Mittemeijer
`CLASSICAL PHENOMENOLOGY: Electricity, Magnetism, Optics, Acoustics, Heat, Mechanics (PACS 41 -52)
`5310 instabilities in annealed proton exchange waveguides in lithium tantaiate
`Paul J. Matthews. Alan R.
`Mickeison
`
`5318 Propagation of several waves in a nonlinear medium displaying an optical
`activity: Application to four-wave mixing in Bl,2(Ge;Si)O2o crystals
`5323 AlGaAs diode laser blue shift resulting from fast neutron irradiation
`
`- 5332 Effect of optical activity on higher-order self-diffraction in absorptive
`photorefractive medium: Transmission geometry for two-wave mixing
`5338 Magnetic field enhanced performance of a copper hollow anode cathode
`laser
`
`5344 Longitudinal mode stability difference in Se- and Si-doped AlGaAs lasers
`
`5347 Gain measurements of high-pressure ultraviolet-preionized self-sustained
`discharge pumped atomic xenon laser‘
`
`M. Sylia, P. X. Nguyen, D. Flouede,
`G. Rivoire
`
`J. C. Camparo, S. B. Deicamp, Fl.
`P. Fruehoiz
`
`Amitava Roy. Kehar Singh
`
`Z. Zhang. N. D. Perry, R. C. Tobin
`
`H. Sugiura, A. Noma, M. Yuri. M.
`Hirose, M. Kume, i. Ohta, M.
`Kazumura
`
`Katsuhiko Komatsu, Fumihiko
`Kannari, Minoru Obara
`
`5353 Anisotropic thermal conductivity in chemical vapor deposition diamond
`
`
`
`Graebner.‘S. Jin, G. w.
`133%
`B. Bacon. L. Seibies, W.
`
`
`
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`The Journal of Applied Physics (ISSN: 0021-8979) is published
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`cles in this journal gives the fee for each copy of the article made
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`author index (with abstracts) to all journals published by AIP and its
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`Page 3 of 19
`
`

`
`Vol. 71, No. 11, 1 June 1992
`Journal of APPLIED PHYSICS
`_j___
`
`APPLIED PHYSICS REVIEWS
`
`H23 Quantitative emission microscopy
`
`J. Kolzer, C. Boit, A. Dallmann, G.
`Deboy, J. Otto, D. Weinmann
`
`GENERAL PHYSICS: Nuclear, Atomic, and Molecular (PACS 01 -36)
`5303 Representation of tails of periodic and infinite-range signals: Towards a
`treatment for truncation
`
`A. C. Vermeulen, R. Delhez, Th. H.
`de Keijser, E. J. Mittemeijer
`CLASSICAL PHENOMENOLOGY: Electricity, Magnetism, Optics, Acoustics, Heat, Mechanics (PACS 41 -52)
`5310
`Instabilities in annealed proton exchange waveguides in lithium tantalate
`Paul J. Matthews, Alan Fl.
`Mickelson
`
`5318 Propagation of several waves in a nonlinear medium displaying an optical
`activity: Application to four-wave mixing in Bi,2(Ge;Si)O2o crystals
`5323 AlGaAs diode laser blue shift resulting from fast neutron irradiation
`
`5332 Effect of optical activity on higher-order self-diffraction in absorptive
`photorefractive medium: Transmission geometry for two-wave mixing
`5338 Magnetic field enhanced performance of a copper hollow anode cathode
`laser
`
`5344 Longitudinal mode stability difference in Se- and Si-doped AlGaAs lasers
`
`5347 Gain measurements of high-pressure ultraviolet-preionized self-sustained
`discharge pumped atomic xenon laser
`
`M. Sylla, P. X. Nguyen, D. Flouede,
`G. Flivoire
`
`J. C. Camparo, S. B. Delcamp, R.
`P. Frueholz
`
`Amitava Roy, Kehar Singh
`
`2. Zhang, N. D. Perry, Fl. C. Tobin
`
`H. Sugiura, A. Noma, M. Yuri, M.
`Hirose, M. Kume, I. Ohta, M.
`Kazumura
`
`Katsuhiko Komatsu, Fumihiko
`Kannari, Minoru Obara
`
`Anisotropic thermal conductivity in chemical vapor deposition diamond
`
` -
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`S. Amer.
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`‘AIP Member and affiliated Societies.
`‘Regular rate subscriptions to Europe. Asia. Africa, and Oceania include air
`freight service.
`
`Back-Number Prices. Single copies from Vol. 24 (1953) through
`Vol. 55 (1984): $55.00; Vol. 56 (1984) and thereafter; $55.00. Spe-
`cial Supplements; $55.00. Volumes 1-23 (1931-1952) are available
`only, on microfilm.
`
`The Journal of Applied Physics (ISSN: 0021-8979) is published
`semimonthly by the American institute of Physics, 500 Sunnyside
`Blvd., Woodbury, NY 11797. Second-class postage paid at Wood-
`bury, NY, and additional mailing offices. POSTMASTER: Send ad-
`dress changes to Journal of Applied Physics, 500 Sunnyside Blvd,
`Woodbury, NY 11797.
`Subscription, renewals, address changes, and single-copy
`orders should be addressed to AIP Member and Subscriber Ser-
`vices Division, 500 Sunnyside Blvd., Woodbury, NY 11797. Allow at
`least six weeks advance notice. For address changes please send
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`from the wrapper of a recent issue. For your convenience a change
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`
`Page 4 of 19
`
`Reprints of individual articles in this journal may be ordered
`singly at $10.00 per article copy (postage included) for articles up to
`20 pages. Beyond 20 pages there is a surcharge of $0.20 per page.
`Air mail delivery is available. Orders are filled within one week of
`receipt or of the date of publication, whichever is later. Send orders
`to the AIP Member and Subscriber Services Division, 500 Sunnyside
`Blvd., Woodbury, NY 11797.
`
`Copying Fees: The code that appears on the first page of arti-
`cles in this journal gives the fee for each copy of the article made
`beyond the free copying permitted by AIP. (See statement under
`“Copyright” elsewhere in this journal.) if no code appears, no fee
`applies. The fee for pre-1978 articles is $0.25 per copy. With the
`exception of copying for advertising and promotional purposes, the
`express permission of AIP is not required provided the fee is paid
`through the Copyright Clearance Center, Inc. (CO0), 21 Congress
`Sf., Salem, MA 01970. Contact the CCC for information on how to
`report copying and remit payment.
`
`Microfilm Subscriptions of complete volumes of the Journal of
`Applied Physics are available on 16 mm and 35 mm. The Journal of
`Applied Physics also appears on a monthly basis in Current Physics
`Microform (CPM) Section 1 along with 32 other journals published
`by the American Institute of Physics and its member societies. A
`Microlilm Catalog is available on request. The Journal of Applied
`Physics is indexed quarterly in Current Physics Index, a subject and
`author index (with abstracts) to all journals published by AIP and its
`member societies.
`
`Page 4 of 19
`
`

`
`5357 Two-dimensional inverse heat conduction problem of estimating the
`time-varying strength of a line heat source
`Longitudinal electron diffusion coefficients in gases: Noble gases
`
`5363
`
`5372
`
`5376
`
`5384
`
`Mass spectroscopic study of CH3 radicals produced in a hollow cathode
`discharge cell
`Frequency up-conversion of a high-power microwave pulse propagating in
`a self-generated plasma
`Resonator amplification of microwave emission from a relativistic
`bearn-plasma system
`
`A. J. Silva Neto, M. N. Ozisik
`
`J. L. Pack, R. E. Voshall, A. V.
`Phelps, L. E. Kline
`
`M. M. Sanz. L. Abad, V. J. Herrero,
`l. Tanarro
`
`S. P. Kuo. A. Ren
`
`Gregory Benford, A. Ben-Amar
`Baranga
`
`Mechanical, and Thermal Properties (PACS 61 -68)
`CONDENSED MATTER: Structure.
`R. G. Vardiman
`The formation and annealing of dislocation damage from high-dose
`5386
`self-ion implantation of aluminum
`Calorimetric measurements of the thermal relaxation in nanocrystalline
`platinum
`'
`Bonding properties of glow-discharge polycrystalline and amorphous Si-C
`films studied by x-ray diffraction and x-ray photoelectron spectroscopy
`Scanning tunneling microscope-promoted growth of nanometer-scale,
`uniform gold stripes on reconstructed Au(111) surfaces
`Molecular-dynamics simulations of ‘bulk and surface damage production
`in low-energy Cu-Cu bombardment
`Thermally stimulated current of Si-ion-implanted GaAs
`
`A. Tschope, R. Birringer, H. Gleiter
`
`T. Takeshita, Y. Kurata, S.
`Hasegawa
`
`Zhouhang Wang, Martin Moskovits
`
`' 5391
`
`5395
`
`5461
`
`5410
`
`’
`541 9
`
`Frank Karetta, Herbert M.
`Urbassek
`
`Y. H. Lee. T. W. Kang, T. W. Kim
`
`5423
`
`Recrystallization behavior of silicon Implanted with iron
`
`5427
`
`5433
`
`Stmcture and crystallization of low-pressure chemical vapor deposited
`silicon films using Si2Hs gas
`Tantalum as a diffusion barrier between copper and silicon: Failure
`mechanism and effect of nitrogen additions
`
`5445
`
`5450
`
`5460
`
`A real time study of the growth of microcrystalline silicon on transparent
`conducting oxide substrates
`-
`Study of the initial formation of silicon carbide by reaction of tetraethyl
`silane with silicon
`_
`Effects of amorphous titanium silicide on subsequently formed crystalline
`compound prepared by two-step thermal process
`
`cf)NDENSED MATTER: Electrical and Magnetic Properties (PACS 71-76)
`5465
`Investigation of the photorefractive effect in Bi2TeO5
`
`5474
`
`5479
`
`5484
`
`' 5489
`
`5500
`
`5504
`
`5517
`
`Phosphorus diffusion into silicon from a spin-on source using rapid
`thermal processing
`
`l'r;\r:;stigations of the electrical properties of electrodeposlted CulnSe2 thin
`
`Saturation of the surface field with external bias for metalorganic
`chemical vapor deposition epilayer GaAs/GaAs as determined by
`electroreflectlon spectroscopy
`
`Progress towards spin-polarized scanning tunneling microscopy
`
`Hysteresis of the work function of Co(0001) surface resulting from an
`allotropic transformation
`
`A simplified and improved mod I
`
`junctions The role of oxygen e o r ea a
`
`f'd I nd al
`
`‘
`
`mostideal silicon p-n
`
`"
`
`Miniband Bloch conduction in semiconductor superlattices
`
`(Continued)
`
`Page 5 of 19
`
`J. P. de Souza. L. Amaral. P. F. P.
`Flchtner
`
`C. H. Hong. C. Y. Park, H.-J. Kim
`
`Karen Holloway. Peter M. Fryer,
`Cyril Cabral, Jr., J. M. E. Harper, P.
`J. Bailey, K. H. Kelleher
`
`M. Fang, B. Drevillon
`
`V. M. Bermudez
`
`H. G. Nam, I. Chung, R. W. Bene
`
`l. Foldvari, Huimin l.iu, Richard C.
`Powell. A. Peter
`
`B. Hartiti, A. Slaoui, J. C. Muller, H.
`Stuck, P. Siffert
`
`C. Guillén, J. Herrero
`
`Henry Poras, George J. Goldsmith,
`Noren Pan
`
`I. V. Shvets, Fl. Wiesendanger. D.
`Biirgler, G. Tarrach, H.-J.
`Giintherodt, J. M. D. Coey
`
`8. Same, K. Takeda, T. Soumura.
`M. Ohki, T. Tani, T. Maeda
`
`Bruno Pellegrini
`
`X. L. Lei, I. C. da.Cunha l.ima
`
`Page 5 of 19
`
`

`
`Analysis of dark current-voltage characteristics of AI/chlorophyll a/Ag
`sandwich cells
`
`investigation of (111) strained layers: Growth, photoluminescence, and
`internal electric fields
`
`A. Oueriagii, H. Kassi, S.
`Hotchandanl, Fl. M. Leblanc
`
`P. J. Harshman, S. Wang
`
`Properties of NiFe-N films prepared by rf sputtering in nitrogen-argon. gas
`mixtures
`'
`~
`
`‘In situ monitoring and Hall measurements of GaN grown with GaN buffer
`ayers
`
`Calculations of the microwave conductivity of high-Tc superconducting
`thin films from power transmission measurements
`Probing‘ of high T,_. sample texturing with a polentiometric ring
`
`Epitaxial growth of YBa2Cu3O7_,, thin films on Si(100) with zirconia
`buffers of varying crystalline quality and structure
`
`A theoretical analysis of the thickness dependence of the localization
`effect on the normal-state resistivities in high-Tc Y1Ba2Cu3O7_5 thin films
`Abnormal Jc changes against temperature of the Bi,_,Pbo_4Sr2Ca2Cu3O,,
`
`Low-resistivity epitaxial YBa2Cu3O7 thin films with improved
`microstructure and reduced microwave losses
`
`Energy barriers for thermal reversal of interacting single domain particles
`
`Magnetic properties of ternary Co-B-C melt spun alloys amorphized over
`an extended concentration range
`.
`
`CONDENSED MATTER: Dielectric and Optical Properties (PACS 77-79)
`5591
`Glassy polarization in the ferroelectric tungsten bronze (Ba,Sr)Nb2O5
`
`5523
`
`5531
`
`5539
`
`5543
`
`5550
`
`5554
`
`5560
`
`5565
`
`' 5569
`
`5572
`
`5579
`
`5585
`
`5596
`
`5601
`
`5606
`
`561 0
`
`5614
`
`5619
`
`5623
`
`5629
`
`K. K. Shih, M. E. Re, T. Takamcri,
`D. B. Dove
`
`S. Nakamura, T. Mukal. M. Senoh
`
`P. H. Wu. Qian Min
`
`Thomas W. Krause, Fl. K. Nkum,
`W. Fl. Datars, Vladimir V. Gridin
`
`A. Lubig, Ch. Buchai, J. Schubert,
`C. Copetti, D. Guggi, C. L. Jia, B.
`Stritzker
`
`J. H. Tyan, J. T. Lue
`
`Yoshitake Nishi, Kazuo Nozaki.
`Shinichi lchimura
`
`U. Poppe. N. Klein. U. Dahne, H.
`Soltner, C. L. Jia, B. Kabius, K.
`Urban, A Lubig, K. Schmidt. S.
`Hensen, S. Orbach, G. Muller, H.
`Piei
`g_
`
`Wenjie Chen, Shufeng Zhang, H.
`Neal Bertram
`
`M. Pont, R. Puzniak, K. V. Rao. A.
`lnoue
`
`A. S. Bhaila. R. Guo, L. E. Cross,
`G. Burns, F. H. Dacol, R. R.
`Neurgaonkar
`
`P. Li, J. F. McDonald, T.-M. Lu
`
`Z.-C. Wu, E. T. Arakawa, J. Ft.
`Jimenez, L J. Schowaiter
`
`P. Asoka-Kumar. T. C. Leung, K.
`G. Lynn, B. Nielsen, M. P. Forcier.
`Z. A. Weinberg. G. W. Flubloff
`
`M. M. Kraus, M. M. Fiegnet, C. R.
`Becker. Fl. N. Bickneli-Tassius, G.
`Landwehr
`
`Tsugunori Takanohashi, Masashi
`Ozeki
`
`N. Mestres, F. Cerdeira, F.
`Meseguer, A. Ruiz, J. P. Siiveira,
`F. Briones. K. Ploog
`
`P. F. A. Meharg, E. A. Ogryzio, I.
`Beilo. W. M. Lau
`
`Densification induced dielectric properties change in amorphous BaTiO3
`thin films
`
`Optical properties of epitaxial CoSi2/Si and CoSi2 particles in Si from
`0.062 to 2.76 eV
`
`Positron annihilation studies in the field induced depletion regions of
`metal-oxide—semiconductor structures
`
`Comparison of band structure calculations and photoluminescence
`experiments on HgTe/CdTe superlattices grown by molecular beam
`epitaxy
`.
`
`Luminescence characteristics of the (GaP),,(GaAs),,/GaAs atomic layer
`short-period superlattices
`
`Nonequilibrium luminescence at the Eo+Ao gap in GaAs with Si-6 doping
`
`Low energy carbon ion bombardment on indium phosphide and its
`implications for alkane-based reactive ion etching
`
`Investigation by laser-induced fluorescence of surface vaporization during _
`the pulsed C02 laser irradiation of a titanium sample in an ambient gas
`
`J. Hermann, C. Boulmer-Leborgne,
`B. Dubreuii, i. N. Mihailescu
`
`CROSS-DISCIPLINAFIY PHYSICS (PACS 81 -98)
`5635 Films and junctions of cadmium zinc telluride
`
`T. L. Chu, S. S. Chu, C. Ferekides,
`J. Britt
`_
`
`(Continued)
`
`Page 6 of 19
`
`Page 6 of 19
`
`

`
`5641
`
`5646
`
`5650
`
`5654
`
`Differences in physical properties of hydrogenated and fluorinated
`amorphous silicon carbide prepared by reactive sputtering
`Morphology of hydrofluoric acid and ammonium fluoride-treated silicon
`surfaces studied by surface infrared spectroscopy
`Atomic disorder induced by mechanical milling in the Nb3Au intermetallic
`compound
`Effects of plasma and/or 193 nm excimer-laser irradiation in
`chemical-vapor deposition of boron films from B2H5+He
`
`5665
`
`5675
`
`Influences of a high excitation frequency (70 MHz_) in the glow discharge
`technique on the process plasma and the properties of hydrogenated
`amorphous silicon
`Pulsed laser deposition of diamond-like carbon films
`
`5685
`
`5689
`
`5694
`
`5699
`
`Analysis of the guidance of electromagnetic waves by a deformed planar
`waveguide with parabolic cylindrical boundaries
`A vectorial finite element formulation for electromagnetic wave
`propagation in helical systems
`Interactions between implanted Mg and base p-type dopant (Be,Zn,C) in
`heterojunction bipolar transistor devices
`A simple technique for simultaneous fabrication of p+/n diodes and
`ohmic contacts on n-type lnP
`‘
`
`COMMUNICATIONS
`
`5703
`
`5706
`
`5709
`
`5712
`
`5715
`
`5718
`
`5721
`
`5724
`
`5727
`
`5728
`
`5729
`
`A model for the Fe-related emission at 3057 cm“ in GaAs
`
`Auger generation suppression in narrow-gap semiconductors using the
`magnetoconcentration effect
`Mossbauer—Fresnel zone plate
`
`Efficient pulsed microwave excitation of a high-pressure excimer
`discharge
`
`Disordering of AlGaAs/GaAs quantum well structures using low dose
`oxygen implantation
`
`Pulsed laser deposition of stoichiometric l.iNbO3 thin films by using 02
`and Ar gas mixtures as ambients
`
`The effects of pressure on the nucleation rate of an undercooled liquid
`
`Substrate bias effects on diamond synthesis in a magnetoactive
`microwave plasma
`.
`
`Comments on the steady state photocarrier grating technique to measure
`diffusion lengths
`
`Reply to “Comments on the steady state photocarrier grating technique
`to measure diffusion lengths"
`
`F. Demichelis, C. F. Pirri, E.
`Tresso, T. Stapinski
`
`M. Niwano. Y. Takeda. Y.
`lshibashi, K. Kurita, N. Miyamoto
`L. M. Di, H. Bakker
`
`Shojiro Komatsu, Mitsuo
`Kasamatsu, Kawakatsu Yamada,
`Yusuke Moriyoshi
`
`F. Finger, U. Kroll, V. Viret, A.
`Shah, W. Beyer, X. -M. Tang,‘J.
`Weber, A. Howling, Ch. Hollenstein
`
`David L. Pappas, Katherine L.
`Saenger, John Bruley, William
`Krakow, Jerome J. Cuomo, Tieer
`Gu, Robert W. Collins
`
`P. K. Choudhury, P. Khastgir, S. P.
`Ojha, L. K. Singh
`
`H. lgarashi, T. Honma
`
`V. Amarger, C. Dubon-Chevallier.
`Y. Gao, B. Descouts
`
`‘
`
`N. Baber, H. Scheffler, H. Ullrich,
`T. Wolf, D. Bimberg
`
`K. Pressel, G. Bohnert, G. Fiiickert,
`A. Dornen, K. Thonke
`
`.
`Zoran Djuric, Zoran Jaksié,
`Aleksandar Vujanié, J. Piotrowski
`
`T. M. Mooney, E. E. Alp, W. B. Yun
`
`V. Rousseau, S. Pasquiers, C.
`Boisse-Laporte, G. Callede, P.
`Leprince, J. Marec, V. Puech
`
`B. L. Weiss, I. V. Bradley, N. J.
`Whitehead, J; S. Roberts
`
`S. B. Ogale, Rashmi Nawathey-
`Dikshit, S. J. Dikshit, S. M.
`Kanetkar
`Chun P. Lee, Taylor G. Wang
`
`J. J. Chang, T. D. Mantei
`
`S. Prabhu, K. L. Narasimhan. D. K.
`Sharma
`
`K. Weiser
`
`Comment on “Rectification in heavily doped p-type GaAs/AIAs
`heteroiunctions" [J. Appl. Phys. 70, 1081 (1991)]
`
`E. Zeeb, K. J. Ebeling
`
`El-‘IRATA '
`5730
`
`5731
`
`5732
`
`' M -2 f
`Erratum: “Magnetic properties fh' h-d
`‘
`[J.Appl.
`ensity
`Phys.69'5349(1991)]
`0
`lg
`n
`n erriles
`Erratum: Subdomain zinc ferrite particles: Synthesis and character‘
`1'
`[J. Appl. Phys. 67, 5509 (1990)]
`lza Ion
`CUMULATIVE AUTHOR INDEX
`
`"
`
`_iv
`
`Page 7 of 19
`
`T. Pannaparayil, R. Marande. S.
`Komarneni
`.
`T. Pannaparayil, S. Komameni. 5'-
`Marande, M. Zadarko
`*
`
`Iv
`
`Page 7 of 19
`
`

`
`Tantalum as a diffusion barrier between copper and silicon: Failure
`mechanism and effect of nitrogen additions
`
`Karen Holloway, Peter M. Fryer, Cyril Cabral, Jr., J. M. E. Harper, P. J. Bailey,
`and K. H. Kelleher
`
`IBM, 7". J. Watson Research Center, Yorktown Heights, New York 10598
`
`(Received 30 September 1991; accepted for publication 12 February 1992)
`
`The interaction of Cu with Si separated by thin (50 nm) layers of tantalum, Ta2N, and a
`nitrogen alloy of Ta has been investigated to determine the factors that affect the success of these
`materials as diffusion barriers to copper. Interrnixing in these films was followed as a function of
`annealing temperature by in situ resistance measurements, Rutherford backscattering spectra,
`scanning electron microscopy, and cross-section transmission electron microscopy. Ta prevents
`Cu-silicon interaction up to 550 “C for 30 min in flowing purified He. At higher temperatures,
`copper penetration results in the formation of 17”-Cu3Si precipitates at the Ta-Si interface. Local
`defect sites appear on the surface of the sample in the early stages of this reaction. The Ta
`subsequently reacts with the substrate at 650°C to form a planar hexagonal-TaSi2 layer. Ta
`silicide formation, which does not occur until 700°C in a Ta-Si binary reaction couple,
`is
`accelerated by the presence of Cu. Nitrogen-alloyed Ta is a very similar diffusion barrier to Ta.
`It was found that Ta2N is a more effective barrier to copper penetration, preventing Cu reaction
`with the substrate for temperatures up to at least 650 °C for 30 min. In this case, local Cu-Si
`reaction occurs along with the formation of a uniform Ta5Si3 layer at the Ta2N-Si interface.
`
`»
`
`I. INTRODUCTION
`
`Interest in copper for conduction lines and contact
`structures in very large-scale integrated (VLSI) circuits is
`widening since it is one of the most conductive metals
`available. Unfortunately, Cu is quite mobile in Si at ele-
`vated temperatures,‘ and its presence in Si creates trap
`levels that are deleterious to device operation.2 For this
`reason, it is necessary to determine which materials may
`act as an effective diffusion barrier for Cu migration. A
`consideration for the choice of a diffusion barrier is that it
`
`be metallurgically stable with respect to the metal that
`carriers the current.“ This is an easy condition to meet for
`copper, since many refractory metals do not form Cu com-
`pounds. However, copper may penetrate through a metal
`layer without reacting with it. Therefore, the design of a
`diffusion barrier to copper poses different problems than
`those presented with aluminum, which is the most com-
`monly used conductor material. Aluminum is highly reac-
`tive and usually induces failure by consuming the barrier
`layer, forming aluminides.5‘7 The presence of oxygen as an
`impurity in the barrier can retard this reaction since a thin
`( < 10 nm) layer of A1203 forms in contact with Al,6 which
`prevents further interdiffusion. No such mechanism would
`be expected for copper, which is relatively unreactive.
`Tantalum is a refractory metal that does not react with
`copper, so a Cu-Ta contact should be stable to high tem-
`peratures. An investigation by Hu et al. detected no diffu-
`sion of Cu through Ta deposited onto oxidized Si sub-
`strates up to 750 °C.8 The diffusion constant of Cu in Ta
`has been measured by a recent radiotracer study.9 Cu mo-
`tion is quite slow in the temperature range that is of use in
`microelectronic processing applications—D0 = 9 X10‘ 4
`cm?‘/s; Ea = 2.3 eV at 400-700 “C. A recent report of the
`thermal stability of an evaporated Cu/Ta/TiSi2/Si thin-
`
`film structure, however, suggests failure by Cu penetration
`at about 300 °C.1° However, the presence of oxygen during
`the thermal treatments may have affected this result.“
`We have previously reported that a 50 nm sputtered Ta
`film prevented the interaction of Cu and Si during 30 min
`anneals at temperatures up to 600 °C.12 At higher temper-
`atures, a complex reaction occurs that involves the motion
`of all three elements. Cu permeated the Ta film to form
`1]”-Cu3Si precipitates at the Ta-Si interface, and the Ta
`reacted with the Si substrate to form a planar layer of
`hexagonal-TaSi2. Upon exposure to room air after the an-
`neal, amorphous silicon oxide formed around the copper
`silicide precipitates. The latter reaction is probably cata-
`lyzed by the presence of Cu3Si atthe SiO2-Si interface.”
`The present investigation extends this work to determine
`the sequence and morphology of this interaction.
`The barrier properties of Ta might be further improved
`by the addition of impurities to the film. If the solubility
`limit is exceeded, solute atoms in a Ta grain would be
`expected to segregate to the grain boundaries, obstructing
`these fast pathways for copper diffusion. For this reason,
`we have incorporated nitrogen into the tantalum film by
`adding N2 to the Ar gas during sputter deposition. If the
`N2 concentration is sufficiently high, a tantalum nitride
`compound, Ta2N is deposited. The nitrides of tantalum
`have high melting points and belong to the class of rela-
`tively dense interstitial compounds,” thus they may pro-
`vide even greater stability and lower reactivity than ele-
`mental Ta. Ta2N as a barrier between A1, and Pd and Co
`silicides has been previously investigated.” There is also a
`report of TaN as a diffusion barrier between Al3Ta and
`silicon.“ However, the res