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`PATENT ABSTRACTS OF JAPAN
`
`(11)Pub|ication number :
`
`09-116225
`
`(43)Date of publication of application : 02.05.1997
`
`
`
`(21)App|ication number : 07-272321
`
`(71)App|icant : HITACHI LTD
`
`(22)Date of filing :
`
`20.10.1995
`
`(72)Inventor : NIWA ATSUKO
`OTOSHI S0
`KURODA TAKARO
`TANAKA TOSHIAKI
`WATANABE AKISADA
`
`(54) SEMICONDUCTOR LIGHT EMITTING DEVICE
`
`(57)Abstract:
`PROBLEM TO BE SOLVED: To reduce the threshold
`
`carrier density of a gallium nitride-based compound
`semiconductor laser by reducing the state density of a
`valence band and increasing the transition probability of
`the band.
`
`SOLUTION: A quantum well active layer 4 having a
`biaxial tensile strain is grown on a substrate crystal 1
`having plane orientation of (1-100)-plane, (11-20)-
`plane, or an equivalent plane, and a resonator is
`constituted in the direction perpendicular to the
`(0001)-direction. Therefore, the state density of the
`upper part of a valence band can be reduced and, at
`the same time, the transition probability of the band can I
`be increased. In addition, a gallium nitride-based
`compound semiconductor laser can be obtained,
`because the threshold current density can be reduced.
`
`
`
`I
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`JP,09-116225,A(1997) [CLAIM]
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`1/1 /<—~‘/'
`
`* NOTICES *
`
`JPO and INPIT are not responsible for any
`damages caused by the use of this translation.
`
`1.This document has been translated by computer. So the translation may not reflect the original
`precisely.
`2.**** shows the word which can not be translated.
`
`3.In the drawings, any words are not translated.
`
`[C|aim(s)]
`[Claim 1]A semiconductor light emitting element comprising material whose grating constant in
`the state characterized by comprising the following where it is formed on a field or a field
`equivalent to this, and optically biaxial stress does not have a well layer of the above-mentioned
`quantum well active layer is smaller than a grating constant of the first crystal of the above.
`It is a cladding layer of a bilayer of the first conductivity type and the second conductivity type
`on the first crystal that comprises a compound semiconductor at least and has wurtzite
`structure.
`
`It is a semiconductor light emitting element which grows epitaxially a quantum well active layer
`inserted into the above-mentioned cladding layer, and the above-mentioned quantum well active
`layer is a gap of less than 10 degrees from a field (1-100).
`
`[Claim 2]A semiconductor light emitting element comprising material whose grating constant in
`the state characterized by comprising the following where it is formed on a field or a field
`equivalent to this, and optically biaxial stress does not have a well layer of the above-mentioned
`quantum well active layer is smaller than a grating constant of the first crystal of the above.
`It is a cladding layer of a bilayer of the first conductivity type and the second conductivity type
`on the first crystal that comprises a compound semiconductor at least and has wurtzite
`structure.
`
`It is a semiconductor light emitting element which grows epitaxially a quantum well active layer
`inserted into the above-mentioned cladding layer, and the above-mentioned quantum well active
`layer is a gap of less than 10 degrees from a field (11-20).
`
`[Claim 3]A semiconductor light emitting element, wherein a waveguide is formed in the direction
`vertical to the [0001] directions in a semiconductor light emitting element given in the 1-2nd
`clauses of a range of claim for patent.
`[Claim 4]A semiconductor light emitting element, wherein the above-mentioned quantum well
`active layer is constituted from InxGayA|1-x-yNzAs1-z (0< x<=1, 0< y<=1, 0< z<=1) in a
`semiconductor light emitting element of a description by the 1-3rd clauses of a range of claim
`for patent.
`[Claim 5]A semiconductor light emitting element, wherein the first crystal of the above is growing
`epitaxially on a ZnO board in a semiconductor light emitting element of claim for patent given in
`the 1-4th clauses of a range.
`[Claim 6]A semiconductor light emitting element characterized by oscillation wavelengths being
`350 nm - 550 nm in a semiconductor light emitting element of claim for patent given in the 1-5th
`clauses of a range.
`
`[Translation done.]
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`JP,09-116225,A [DETAILED DESCRIPTION]
`
`1/4 ’{—“/I
`
`* NOTICES *
`
`JPO and INPIT are not responsible for any
`damages caused by the use of this translation.
`
`1.This document has been translated by computer. So the translation may not reflect the original
`precisely.
`2.**** shows the word which can not be translated.
`
`3.In the drawings, any words are not translated.
`
`[Detailed Description of the Invention]
`[0001]
`[Field of the Invention]This invention relates to the light emitting device which used the gallium
`nitride system compound semiconductor.
`[0002]
`[Description of the Prior Art]Ga||ium nitride system compound semiconductors, such as GaN,
`GaA|N, InGaN, and InGaA|N, are wide gap semiconductors which have a transited [ directly ]
`type, and are actively studied as a material which constitutes the light emitting device to an
`ultraviolet area from blue. The present, As a light emitting device using this material. The high-
`intensity blue LED of the double hetero structure which makes a luminous layer Zn dope InGaN
`layer constituted on silicon on sapphire is known (S. Nakamura et al., Appl. Phys. Lett., 64 (1994)
`1687). The gallium nitride system light emitting device which constituted on the ZnO board and
`decreased the defect by a lattice strain is indicated by the JP,5-206513,A gazette. However,
`gallium nitride system compound semiconductor laser by current injection was not realized until
`now.
`
`[0003]
`[Problem to be solved by the invention]That the laser oscillation by current injection is difficult
`in a gallium nitride system compound semiconductor originates in the density of states of the
`valence band of this material system being large, and threshold carrier density being high. The
`band structure of the valence-band upper part near gamma point in case [ of wurtzite type
`GaN / distorted ] there is nothing is shown in drawing 5.
`[0004]Incidentally, gamma point is a point that wave number vector k (equivalent to the wave
`number of the horizontal axis of drawing 5) of the electron inside a crystal is set to "0." Now, in
`a wurtzite type semiconductor, the split of the energy of gamma point is carried out to three by
`the crystal field and a spin orbit interaction. In the state of the wave function of gamma point,
`these three bands are made for convenience to be referred to as hh(heavy ho|e)1, hh2, and lh
`(light hole), respectively. The threshold carrier density which the density of states of the
`valence-band upper part of GaN gives laser oscillation since it is large as compared with
`common III-V fellows semiconductors, such as GaAs, increased, and the laser oscillation by
`current injection was difficult. In a wurtzite type semiconductor, since the character of the wave
`function of hhi and hh2 is the same, even if it adds distortion, the energy split of hh1 and hh2
`hardly changes. For this reason, with a wurtzite type semiconductor, reduction of the density of
`states by a compressive strain was not able to be expected, either.
`[0005]According to the reduction of the density of states of the valence-band upper part and
`the increase of optical transition probability by the hauling distortion of a gallium nitride system
`compound semiconductor, this invention reduces threshold carrier density required for laser
`oscillation, and an object of this invention is to realize the gallium nitride semiconductor laser by
`current injection.
`[0006]
`[Means for solving prob|em]The gallium nitride system semiconductor light emitting device of this
`invention grows the quantum well active layer which has an optically biaxial hauling distortion on
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`http://www4.ipd1.inpit.go.jp/cgi-bin/tran_web_cgi_ejje?atw_u=http%3A%2F%2Fww...
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`the field (1-100) of the first crystal with wurtzite structure, and produces a waveguide in a
`direction vertical to the [0001] axes of the 1st crystal, i.e., the [11-20] direction. The same
`effect can be acquired also by growing up the active layer which has an optically biaxial hauling
`distortion on the field (11-20) of the first crystal, and producing a waveguide in a direction
`vertical to [0001] axes, i.e., the [1-100] direction. The same effect can be acquired also when
`the plane direction of the first above-mentioned crystal is a field which has a gap of (1-100) or
`(11-20) to 10 degrees. If it puts in another way, to the surface of a substrate in which an
`element is formed, the semiconductor light emitting element by this invention has the almost
`parallel c axis of the crystal which constitutes (1) active layer, and it pulls it to the well layer of
`(2) active layers, and it has the structural feature that distortion is added.
`[0007]For example, the band structure of the valence-band upper part near gamma point at the
`time of adding 2% of optically biaxial hauling distortion to wurtzite type GaN becomes like drawing
`§. By impressing hauling distortion as compared with drawing 5 shows that lh band which
`consists of a z orbit shifts to the upper part, and the density of states of the valence-band
`upper part of a direction parallel to c axis, i.e., [0001] axes, decreases substantially. That is,
`change of the energy (vertical axis) over the wave number (horizontal axis) of a direction parallel
`to c axis becomes sudden, and density of states is decreasing. Therefore, the density of states
`of a valence band can be reduced by constituting a quantum well active layer on a direction
`vertical to [0001] axes, i.e. (1-100), a field, a field, or a field equivalent to this, and considering it
`as the structure which impressed hauling distortion.
`[0008]When a quantum well is formed on a field (1-100) or (11-20) a field, optical transition
`probability has a polarization direction dependency with quantum well side Uchi’s anisotropy. For
`example, the polarization dependency of the transition-matrix element in gamma point of a
`quantum well that a plane direction is (1-100) becomes as it is shown in Table 1 as compared
`with the case of the distortionless quantum well constituted in the field (0001). Table 1 shows
`the calculation result of the optical matrix element in the band end in a GaN quantum well.
`[0009]
`[Table 1]
`$1
`
`Ecilifi
`
`(0001)
`
`(1-100)
`
`fif/E
`
`mi
`
`2%§'lo§EUE
`
`7.62 eV
`
`TE:E— F
`
`We-+~'
`
`13.2 eV
`
`(1E')'fi[0001])
`
`0.92 eV
`(fiat; [11-201)
`ms ev
`
`[0010]Tab|e 1 shows that transition probability can be enlarged about 2 times in the hauling
`distortion quantum well on a field (1-100), if a waveguide is formed in a direction vertical to
`[0001], i.e., the [11-20] direction, (the energy value in front shows the ease of producing of
`optical transition, and transition probability is so high that it is large). By this, a gain increases,
`threshold carrier density required for an oscillation is reduced, and a gallium nitride
`semiconductor laser can be realized.
`
`[001 1]
`[Mode for carrying out the invention]The first working example of this invention is described
`using drawing 1.
`[0012]This multiplex quantum well laser like a graphic display on the field (1-100) n type ZnO
`board 1, InGaN buffer layer 2 which carries out lattice matching to the substrate 1, n-InGaA|N
`layer 3 which doped Si, the active layer 4 which consists of an undoping multiplex quantum well,
`and p-InGaA|N layer 5 which doped Mg are laminated successively, and is constituted. These
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`each layers grow epitaxially with a gas source molecular beam grown method. The thickness of
`the buffer layer 2, n-InGaA|N layer 3, and p-InGaA|N layer 5 is 2 micrometers, 0.15 micrometer,
`and 0.15 micrometer, respectively. The undoping multiplex quantum well active layer 4 has the
`double quantum well structure where the Ino_2Gao_6aluminum0_2N barrier layer (8 nm of thickness)
`6 and the Ino_1Gao_9N well layer (4 nm of thickness) 7 were laminated by turns, as expanded and
`shown. The composition ratio of the well layer 7 is set up here so that gap deltaa/a of a future
`grating constant may be -1.8%, when the grating constant of ZnO is set to a, and an optically
`biaxial hauling distortion is impressed. After vapor-depositing the n side In electrode 8 at the
`rear face of the substrate 1 of the wafer produced by making it above and vapor-depositing Al
`electrode 9 to the p type InGaA|N layer 5, a cleavage is carried out a field (11-20), a resonator
`about 800 micrometers in length is formed in the [11-20] direction (side side of the active layer
`4 of drawing 1), and a semiconductor laser is produced. In the room temperature, continuous
`oscillation of this semiconductor laser was carried out with about 50 mA of threshold current.
`
`The oscillation wavelength was about 420 nm.
`[0013]In this example, the plane direction of the ZnO board was made into the field (11-20), and
`when the semiconductor laser which formed the resonator in the [1-100] direction was produced
`similarly, what has almost equivalent threshold current and oscillation wavelength was obtained.
`In this example, the plane direction of the ZnO board was made into Men who inclined 10
`degrees in the [0001] directions from the field (1-100), and when the semiconductor laser which
`formed the resonator in the [11-20] direction was produced similarly, what has almost equivalent
`threshold current and oscillation wavelength was obtained.
`[0014]Next, the second working example of this invention is described using drawing 2.
`like a
`[0015]The presentation x of In1-xGaxN grown-up on the field (1-100) n type ZnO board 1
`graphic display on the InGaN presentation inclined layer 11 which changes continuously from 0.8
`to 0.5, The Ino_5GaO_5N buffer layer 12 which carries out lattice matching to the presentation
`inclined layer 11, n-InGaA|N layer 13 which doped Si, the active layer 14 which consists of an
`undoping multiplex quantum well, and p-InGaA|N layer 15 which doped Mg are laminated
`successively, and is constituted. These each layers grow epitaxially with a gas source molecular
`beam grown method. The thickness of the buffer layer 12, n-InGaA|N layer 13, and p-InGaA|N
`layer 15 is 2 micrometers, 0.15 micrometer, and 0.15 micrometer, respectively. The undoping
`multiplex quantum well active layer 14 has the double quantum well structure where the
`In0_35Gao_5aluminumo_15N barrier layer (5 nm of thickness) 16 and the Ino_2Gao_8N well layer (3 nm
`of thickness) 17 were laminated by turns, as expanded and shown. The composition ratio of the
`well layer 17 is set up here so that gap deltaa/a of a future grating constant may be -2.0%, when
`the grating constant of an In0_5Gao_5N buffer layer is set to a, and an optically biaxial hauling
`distortion is impressed. After vapor-depositing the n side In electrode 8 at the rear face of the
`substrate 1 of the wafer produced by making it above and vapor-depositing Al electrode 9 to the
`p type InGaA|N layer 5, a cleavage is carried out a field (11-20), a resonator about 800
`micrometers in length is formed in the [11-20] direction, and a semiconductor laser is produced.
`In the room temperature, continuous oscillation of this semiconductor laser was carried out with
`about 60 mA of threshold current. The oscillation wavelength was about 450 nm.
`[0016]Although InGaN was used as a quantum well layer and ZnO was used as a substrate in the
`above-mentioned working example, composition used for the light emitting device of this
`invention can be considered as the composition which is not limited to this, for example, is
`
`shown in drawing 3 - drawing 4.
`[0017]The semiconductor laser shown in drawing 3 on the field (1-100) of the n type ZnO board
`1, InGaN buffer layer 2 which carries out lattice matching to the substrate 1 grows, and on this
`buffer layer 2, n-InGaAlN layer 3, the undoping single quantum well active layer 21, and the p-
`InGaA|N cladding layer 5 are laminated successively, and are constituted. These each layers
`grow epitaxially with a gas source molecular beam grown method. The quantum well active layer
`21 has here the single quantum well structure where the GaN0_95Aso_o5 well layer (5 nm of
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`thickness) 22 was inserted into the Ino_2Gao_6a|uminumo_2N barrier layer (10 nm of thickness) 23,
`as expanded and shown. The composition ratio of the well layer 22 is set up here so that gap
`deltaa/a of a future grating constant may be -1.8%, when the grating constant of ZnO is set to a,
`and an optically biaxial hauling distortion is impressed. After vapor-depositing the n side In
`electrode 8 at the rear face of the substrate 1 of the wafer produced by making it above and
`vapor-depositing Al electrode 9 to the p type InGaAlN layer 5, a cleavage is carried out a field
`(11-20), a resonator about 800 micrometers in length is formed in the [11-20] direction, and a
`semiconductor laser is produced. In the room temperature, continuous oscillation of this
`semiconductor laser was carried out with about 50 mA of threshold current. The oscillation
`
`wavelength was about 450 nm.
`[0018]On the field (1-100) of the silicon on sapphire 31, InGaN buffer layer 2 grows, n-InGaA|N
`layer 3, the undoping multiplex quantum well active layer 4, and the p-InGaA|N cladding layer 5
`
`are laminated successively, and the semiconductor laser shown in drawing 4 is constituted at
`this buffer layer 2 top. These each layers grow epitaxially by metal-organic chemical vapor
`deposition. The quantum well active layer 4 has here the multiple quantum well structure by
`which the In0_2Ga0_6a|uminumo_2N barrier layer (8 nm of thickness) 6 and two cycles of
`Ino1Ga0 9N well layers (4 nm of thickness) 7 were laminated by turns, as expanded and shown.
`The composition ratio of the well layer 7 is set up here so that gap deltaa/a of a future grating
`constant may be -1.8%, when the grating constant of an InGaN buffer layer is set to a, and an
`optically biaxial hauling distortion is impressed. A part of p-InGaA|N cladding layer 5 of a wafer
`and quantum well active layer 4 produced by making it above are removed by etching, After
`exposing the n-InGaAlN cladding layer 3 and vapor-depositing Al electrode 9 to p-cladding layer
`and n-cladding layer, a cleavage is carried out a field (11-20), a resonator about 800
`micrometers in length is formed in the [11-20] direction, and a semiconductor laser is produced.
`In the room temperature, continuous oscillation of this semiconductor laser was carried out with
`about 70 mA of threshold current. The oscillation wavelength was about 420 nm.
`[0019]This invention is applicable not only to the laser structure shown in the working example
`but various semiconductor lasers, for example, a distributed feedback laser, a distributed Bragg
`reflector laser, tunable laser, and laser with an external resonator.
`
`[0020]
`[Effect of the Invention]As mentioned above, the gallium nitride system compound
`semiconductor light emitting device of this invention, Since a plane direction grows the quantum
`well active layer which has an optically biaxial hauling distortion on the base substance crystal
`which is a field (1-100) or (11-20) a field and is producing the waveguide in the direction vertical
`to the [0001] directions, transition probability can be small increased in the density of states of
`the valence-band upper part. Since a gain increases and threshold current density can be
`reduced by this, gallium nitride system compound semiconductor laser is realizable.
`[0021]
`
`[Translation done.]
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`JP,09-116225,A [DESCRIPTION OF DRAWINGS]
`
`1/ 1 ’{—‘/
`
`* NOTICES *
`
`JPO and INPIT are not responsible for any
`damages caused by the use of this translation.
`
`1.This document has been translated by computer. So the translation may not reflect the original
`precisely.
`2.**** shows the word which can not be translated.
`
`3.In the drawings, any words are not translated.
`
`[Brief Description of the Drawings]
`fl_);1!_”__Ej_§’_l._l'_l_i_’:E_g___‘l_;l_-l-lie block diagram of the semiconductor laser of this invention working example.
`[flrawing 2]The block diagram of the semiconductor laser of this invention working example.
`[Drawing 3]The block diagram of the semiconductor laser of this invention working example.
`[Drawing 4]The block diagram of the semiconductor laser of this invention working example.
`[Drawing 5]The figure showing the energy dispersion of the valence-band upper part of wurtzite
`type GaN in case [ distorted ] there is nothing. .
`[Drawing 5]The figure showing the energy dispersion of the valence-band upper part of wurtzite
`type GaN at the time of impressing optically biaxial hauling distortion 2%.
`[Explanations of letters or numerals]
`1 -- (1-100) field n type ZnO board, 2 -- InGaN buffer layer, 3 -- n-InGaA|N layer, 4 --
`undoping multiplex quantum well active layer, 5 -- p-InGaA|N layer, 6 -- Ino_2Ga0_6a|uminumo_2N
`
`barrier layer, 7 -- Ino_1Gao_9N well layer, 8 -- In electrode, 9 -- Al electrode, 11 -- InGaN
`
`presentation inclined layer, 12 -- InO_5Gao_5N buffer layer, 13 -- n-InGaA|N layer, 14 -- undoping
`
`multiplex quantum well active layer, 15 -- p-InGaA|N layer, 16 -- Ino_35Gao_5a|uminum0_15N
`
`barrier layer, 17 -- In0_2Gao_8N well layer, 21 -- undoping single quantum well active layer, 22 --
`
`GaN0_95Aso_o5 well layer, 23 -- Ino_2Gao_6a|uminumo_2N barrier layer, 31 -- silicon on sapphire.
`
`[Translation done.]
`
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`2012/03/24
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`VIZIO 1003
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`VIZIO 1003
`
`VIZIO 1003
`
`

`
`7
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`(5)
`
`¢%iFEJ1Z9—116225
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`8
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`15
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`9
`3
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`2 3
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`1
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`Q
`
`4
`5
`
`VIZIO 1003
`
`{xx
`
`1
`
`