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`PATENT‘Jf\',E,',[TCAT,ON
`
`0020-5147F’US13
`
`
`
`
`
`DEVICE FOR EMITTING WHITE-COLOR LIGHT
`TRANSMWTAL
`
`(ONLY FOR NEW NONPROVISIONAL APPLICA TIONS UNDER
`37 CFR 153(3))
`
` Express Mail Label No.
`Commissioner for Patents
`APPLICATION ELEMENTS
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`ADDRESS To'
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`12/548,614
`281 2
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`Birch. Stewart, Kolasch & Birch, LLP
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`VIZIO 1003
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`0020-5147PUS13
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`FEE CALCULATION
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`1. BASIC FILING, SEARCH, AND EXAMINATION FEES
`FILINGSFEEISE
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`t.
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`.
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`Fee j§) %—flrgll
`F lEilgltl
`__I§lF°° § (Er
`330
`165
`540
`270
`220
`1 10
`220
`1 10
`100
`50
`140
`70
`220
`110
`330
`165
`170
`85
`
`
`
`
`
`
`
`
`
`
`
`
`
`
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`
`
`
`
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`
`
`
`
`
`
`Reissue
`
`330
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`165
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`540
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`220
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`1 10
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`0
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`270
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`0
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`650
`
`0
`
`325
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`Small Entiy
`Fee (§)
`FAQ!
`26
`52
`110
`220
`195
`390
`Multiple Dependent Claims
`Fee (§)
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`Fee Paid (§)_
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`. ~*d5fiW¢2iE“..‘.. N
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`\T"xj—j-jjnjrj
`
`CVAWJ .l— -[Hl
`§J\'1‘!5.Vl' F::*2..°v
`Date July 1, 2010
`Name (Print/Type) D. Richard Anderson ¢
`This collection of information is required by 37 CFR 1.136. The information is required to obtain or retain a benefit by the public which is to file (and by the
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`CQZL.
`
`VIZIO 1003
`
`VIZIO 1003
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`

`
`Attorney Docket No. 0020-5147PUS13
`
`DEVICE FOR EMITTING WHITE-COLOR LIGHT
`
`CROSS-REFERENCE TO RELATED APPLICATIONS
`
`[0001]
`
`This application is a divisional of U.S. Application No. 12/548,614 filed
`
`August 27, 2009 which is a divisional of U.S. Application No. 12/028,062 filed February
`
`8, 2008, now U.S. Patent 7,682,848 which is a divisional of U.S. Application No.
`
`10/609,402 filed July 1, 2003, now U.S. Patent 7,362,048, which is a divisional of U.S.
`
`Application No. 09/458,024, filed December 10, 1999, now U.S. Patent 6,614,179, which
`
`is a divisional of U.S. Application No. 09/300,315, filed on April 28, 1999, now U.S.
`
`Patent 6,069,440, which is a divisional of U.S. Application No. 08/902,725, filed on July
`
`29, 1997, now U.S. Patent 5,998,925, which also claims priority on Japanese Patent
`
`Application Nos. P 08—198585 filed July 29, 1996; P 08-244339 filed September 17, 1996;
`
`P 08-245381 filed September 18, 1996; P 08-359004 filed December 27, 1996; and P 09-
`
`081010 filed March 31, 1997. The entire contents of each of these applications are hereby
`
`incorporated by reference.
`
`BACKGROUND OF THE INVENTION
`
`(Field of the Invention)
`
`[0002]
`
`The present invention relates to a light emitting diode used in LED display,
`
`back light source, traffic signal, trailway signal, illuminating switch, indicator, etc. More
`
`particularly, it relates to a light emitting device (LED) comprising a phosphor, which
`
`converts the wavelength of light emitted by a light emitting component and emits light,
`
`and a display device using the light emitting device.
`
`Description of Related Art
`
`[0003]
`
`A light emitting diode is compact and emits light of clear color with high
`
`efficiency.
`
`It is also free from such a trouble as bum-out and has good initial drive
`
`characteristic, high vibration resistance and durability to endure repetitive ON/OFF
`
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`

`
`Attorney Docket No. 0020-5 147PUS 13
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`operations, because it is a semiconductor element. Thus it has been used widely in such
`
`applications as various indicators and various light sources. Recently light emitting
`
`diodes for RGB (red, green and blue) colors having ultra-high luminance and high
`
`efficiency have been developed, and large screen LED displays using these light emitting
`
`diodes have been put into use. The LED display can be operated with less power and has
`
`such good characteristics as light weight and long life, and is therefore expected to be
`
`more widely used in the future.
`
`[0004]
`
`Recently, various attempts have been made to make white light sources by
`
`using light emitting diodes. Because the light emitting diode has a favorable emission
`
`spectrum to generate monochromatic light, making a light source for white light requires
`
`it to arrange three light emitting components of R, G and B closely to each other while
`
`diffusing and mixing the light emitted by them. When generating white light with such an
`
`arrangement, there has been such a problem that white light of the desired tone cannot be
`
`generated due to variations in the tone, luminance and other factors of the light emitting
`
`component. Also when the light emitting components are made of different materials,
`
`electric power required for driving differs from one light emitting diode to another,
`
`making it necessary to apply different voltages different light emitting components, which
`
`leads to complex drive circuit. Moreover, because the light emitting components are
`
`semiconductor light emitting components, color tone is subject to variation due to the
`
`difference
`
`in temperature
`
`characteristics,
`
`chronological
`
`changes
`
`and operating
`
`environment, or unevenness in color may be caused due to failure in uniformly mixing the
`
`light emitted by the light emitting components. Thus light emitting diodes are effective as
`
`light emitting devices for generating individual colors, although a satisfactory light source
`
`capable of emitting white light by using light emitting components has not been obtained
`
`so far.
`
`[0005]
`
`In order
`
`to solve these problems,
`
`the present applicant previously
`
`developed light emitting diodes which convert the color of light, which is emitted by light
`
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`
`Attorney Docket No. 0020-5 l47PUS 13
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`emitting components, by means of a fluorescent material disclosed in Japanese Patent
`
`Kokai Nos. 5-152609, 7—99345, 7-176794 and 8-7614.
`
`The light emitting diodes
`
`disclosed in these publications are such that, by using light emitting components of one
`
`kind, are capable of generating light of white and other colors, and are constituted as
`
`follows.
`
`[0006]
`
`The light emitting diode disclosed in the above gazettes are made by
`
`mounting a light emitting component, having a large energy band gap of light emitting
`
`layer, in a cup provided at the tip of a lead frame, and having a fluorescent material that
`
`absorbs light emitted by the light emitting component and emits light of a wavelength
`
`different from that of the absorbed light (wavelength conversion), contained in a resin
`
`mold which covers the light emitting component.
`
`[0007]
`
`The light emitting diode disclosed as described above capable of emitting
`
`white light by mixing the light of a plurality of sources can be made by using a light
`
`emitting component capable of emitting blue light and molding the light emitting
`
`component with a resin including a fluorescent material that absorbs the light emitted by
`
`the blue light emitting diode and emits yellowish light.
`
`[0008]
`
`However, conventional
`
`light emitting diodes have such problems as
`
`deterioration of the fluorescent material leading to color tone deviation and darkening of
`
`the fluorescent material resulting in lowered efficiency of extracting light. Darkening
`
`here refers to, in the case of using an inorganic fluorescent material such as (Cd, Zn)S
`
`fluorescent material, for example, part of metal elements constituting the fluorescent
`
`material precipitate or change their properties leading to coloration, or, in the case of
`
`using an organic fluorescent material, coloration due to breakage of double bond in the
`
`molecule. Especially when a light emitting component made of a semiconductor having a
`
`high energy band gap is used to improve the conversion efficiency of the fluorescent
`
`material (that is, energy of light emitted by the semiconductor is increased and number of
`
`photons having energies above a threshold which can be absorbed by the fluorescent
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`
`Attorney Docket No. 0020-5 147PUS13
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`material increases, resulting in more light being absorbed), or the quantity of fluorescent
`
`material consumption is decreased (that is, the fluorescent material is irradiated with
`
`relatively higher energy), light energy absorbed by the fluorescent material inevitably
`
`increases resulting in more significant degradation of the fluorescent material. Use of the
`
`light emitting component with higher intensity of light emission for an extended period of
`
`time causes further more significant degradation of the fluorescent material.
`
`[0009]
`
`Also the fluorescent material provided in the vicinity of the light emitting
`
`component may be exposed to a high temperature such as rising temperature of the light
`
`emitting component and heat transmitted from the external environment (for example,
`
`sunlight in case the device is used outdoors).
`
`[0010]
`
`Further, some fluorescent materials are subject to accelerated deterioration
`
`due to combination of moisture entered from the outside or introduced during the
`
`production process, the light and heat transmitted from the light emitting component.
`
`[0011]
`
`When it comes to an organic dye of ionic property, direct current electric
`
`field in the vicinity of the chip may cause electrophoresis, resulting in a change in the
`
`color tone.
`
`SUMMARY OF THE INVENTION
`
`[0012]
`
`Thus, an object of the present invention is to solve the problems described
`
`above and provide a light emitting device which experiences only extremely low degrees
`
`of deterioration in emission light intensity, light emission efficiency and color shift over a
`
`long time of use with high luminance.
`
`[0013]
`
`The present applicant completed the present invention through researches
`
`based on the assumption that a light emitting device having a light emitting component
`
`and a fluorescent material must meet the following requirements to achieve the above—
`
`mentioned object.
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`Attorney Docket No. 0020-5 l47PUS l 3
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`[0014]
`
`The light emitting component must be capable of emitting light of high
`
`luminance with light emitting characteristic which is stable over a long time of use.
`
`[0015]
`
`The fluorescent material being provided in the vicinity of the high-
`
`luminance light emitting component, must show excellent resistance against light and heat
`
`so that the properties thereof do not change even when used over an extended period of
`
`time while being exposed to light of high intensity emitted by the light emitting
`
`component (particularly the fluorescent material provided in the vicinity of the light
`
`emitting component is exposed to light of a radiation intensity as high as about 30 to 40
`
`times that of sunlight according to our estimate, and is required to have more durability
`
`against light as light emitting component of higher luminance is used).
`
`[0016]
`
`With regard to the relationship with the light emitting component, the
`
`fluorescent material must be capable of absorbing with high efficiency the light of high
`
`monochromaticity emitted by the light emitting component and emitting light of a
`
`wavelength different from that of the light emitted by the light emitting component.
`
`[0017]
`
`Thus the present invention provides a light emitting device, comprising a
`
`light emitting component and a phosphor capable of absorbing a part of light emitted by
`
`the light emitting component and emitting light of wavelength different from that of the
`
`absorbed light;
`
`[0018]
`
`wherein said light emitting component comprises a nitride compound
`
`semiconductor represented by the formula: IniGajA.1kN where Osi, Osj, Osk and i+j+k=l)
`
`and said phosphor contains a garnet fluorescent material comprising at least one element
`
`selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, and at least one element
`
`selected from the group consisting of Al, Ga and In, and being activated with cerium.
`
`[0019]
`
`The nitride compound semiconductor (generally represented by chemical
`
`formula IniGajA.lkN where Osi, Osj, Osk and i+j+k=1) mentioned above contains various
`
`materials including InGaN and GaN doped with various impurities.
`
`VIZIO 1003
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`
`Attorney Docket No. 0020-5 l47PUS l 3
`
`[0020]
`
`The phosphor mentioned above contains various materials defined as
`
`described above, including Y3Al5O12:Ce and Gd3ln5O12:Ce.
`
`[0021]
`
`Because the light emitting device of the present invention uses the light
`
`emitting component made of a nitride compound semiconductor capable of emitting light
`
`with high luminance, the light emitting device is capable of emitting light with high
`
`luminance. Also the phosphor used in the light emitting device has excellent resistance
`
`against light so that the fluorescent properties thereof experience less change even when
`
`used over an extended period of time while being exposed to light of high intensity. This
`
`makes it possible to reduce the degradation of characteristics during long period of use
`
`and reduce deterioration due to light of high intensity emitted by the light emitting
`
`component as well as extraneous light (sunlight including ultraviolet light, etc.) during
`
`outdoor use, thereby to provide a light emitting device which experiences extremely less
`
`color shift and less luminance decrease. The light emitting device of the present invention
`
`can also be used in such applications that require response speeds as high as 120 nsec., for
`
`example, because the phosphor used therein allows after glow only for a short period of
`
`time.
`
`[0022]
`
`The phosphor used in the light emitting diode of the present invention
`
`preferably contains an yttrium-aluminum-garnet fluorescent material that contains Y and
`
`Al, which enables it to increase the luminance of the light emitting device.
`
`[0023]
`
`In the light emitting device of the present invention, the phosphor may be a
`
`fluorescent material represented by a general formula (Re1_,Sm,)3(Al1_sGas)5O12:Ce, where
`
`
`
`0Sr<l and Osssl and Re is at least one selected from Y and Gd, in which case good
`
`characteristics can be obtained similarly to the case where the yttrium-aluminum-garnet
`
`fluorescent material is used.
`
`[0024]
`
`Also in the light emitting device of the present invention, it is preferable,
`
`for the purpose of reducing the temperature dependence of light emission characteristics
`
`(wavelength of emitted light,
`
`intensity of light emission, etc.),
`
`to use a fluorescent
`
`VIZIO 1003
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`1
`
`§
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`VIZIO 1003
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`

`
`Attorney Docket No. 0020-5 l47PUS l 3
`
`material represented by a general
`
`formula (Y1.p.q-rGdpCeqSmr)3(A1].sGaS)50]2 as the
`
`phosphor, where 0£pSO.8, 0.003SqSO.2, 0.0003SrS0.08 and Osssl.
`
`[0025]
`
`Also in the light emitting device of the present invention, the phosphor
`
`may contain two or more yttrium-aluminum-garnet fluorescent materials, activated with
`
`cerium, of different compositions including Y and Al. With this configuration, light of
`
`desired color can be emitted by controlling the emission spectrum of the phosphor
`
`according to the property (wavelength of emitted light) of the light emitting component.
`
`[0026]
`
`Further in the light emitting device of the present invention, in order to
`
`have light of a specified wavelength emitted by the light emitting device, it is preferable
`
`that the phosphor contains two or more fluorescent materials of different compositions
`
`represented by general formula (Re1_,Sm,)3(Al1_sGas)5O12:Ce, where 0$r<l and Osssl and
`
`Re is at least one selected from Y and Gd.
`
`[0027]
`
`Also in the light emitting device of the present invention,
`
`in order to
`
`control the wavelength of emitted light, the phosphor may contain a first fluorescent
`
`material represented by general formula Y3(Al1_sGas)5O12:Ce and a second fluorescent
`
`material represented by general formula Re3Al5O12:Ce, where Osssl and Re is at least one
`
`selected from Y, Gd and La.
`
`[0028]
`
`Also in the light emitting device of the present invention,
`
`in order to
`
`control the wavelength of emitted light, the phosphor may be an yttrium-aluminum-garnet
`
`fluorescent material containing a first fluorescent material and a second fluorescent
`
`material, with different parts of each yttrium being substituted with gadolinium.
`
`[0029]
`
`Further in the light emitting device of the present invention, it is preferable
`
`that main emission peak of the light emitting component is set within the range from 400
`
`nm to 530 nm and main emission wavelength of the phosphor is set to be longer than the
`
`main emission peak of the light emitting component. This makes it possible to efficiently
`
`emit white light.
`
`VIZIO 1003
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`
`Attorney Docket No. 0020-5 l47PUS l 3
`
`[0030]
`
`Further in the light emitting device of the present invention, it is preferable
`
`that the light emitting layer of the light emitting component contains a gallium nitride
`
`semiconductor which contains In, and the phosphor is an yttrium—aluminum-gamet
`
`fluorescent material wherein a part of Al in the yttrium-aluminum-garnet fluorescent is
`
`substituted by Ga so that the proportion of Ga:Al is within the range from l:l to 4:6 and a
`
`part of Y in the yttrium-aluminum-garnet fluorescent is substituted by Gd so that the
`
`proportion of Y:Gd is within the range from 4:1 to 2:3. Absorption spectrum of the
`
`phosphor which is controlled as described above shows good agreement with that of light
`
`emitted by the light emitting component which contains gallium nitride semiconductor
`
`including In as the light emitting layer, and is capable of improving the conversion
`
`efficiency (light emission efficiency). Also the light, generated by mixing blue light
`
`emitted by the light emitting component and fluorescent light of the fluorescent material,
`
`is a white light of good color rendering and, in this regard, an excellent light emitting
`
`device can be provided.
`
`[0031]
`
`The light emitting device according to one embodiment of the present
`
`invention comprises a substantially rectangular optical guide plate provided with the light
`
`emitting component mounted on one side face thereof via the phosphor and surfaces of
`
`which except for one principal surface are substantially covered with a reflective material,
`
`wherein a light emitted by the light emitting component is turned into a planar light by the
`
`phosphor and the optical guide plate and to be an output from the principal surface of the
`
`optical guide plate.
`
`[0032]
`
`The light emitting device according to another embodiment of the present
`
`invention has a substantially rectangular optical guide plate, which is provided with the
`
`light emitting component mounted on one side face thereof and the phosphor installed on
`
`one principal surface with surfaces thereof and except for the principal surface being
`
`substantially covered with a reflective material, wherein a light emitted by the light
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`emitting component is turned into a planar light by the optical guide plate and the
`
`phosphor, to be an output from the principal surface of the optical guide plate.
`
`[0033]
`
`The LED display device according to the present invention has an LED
`
`display device comprising the light emitting devices of the present invention arranged in a
`
`matrix and a drive circuit which drives the LED display device according to display data
`
`which is input thereto. This configuration makes it possible to provide a relatively low-
`
`priced LED display device which is capable of high-definition display with less color
`
`unevenness due to the viewing angle.
`
`[0034]
`
`The light emitting diode according to one embodiment of the present
`
`invention comprises:
`
`[0035]
`
`a mount lead having a cup and a lead;
`
`[0036]
`
`an LED chip mounted in the cup of the mount lead with one of electrodes
`
`being electrically connected to the mount lead;
`
`[0037]
`
`a transparent coating material filling the cup to cover the LED chip; and
`
`[0038]
`
`a light emitting diode having a molding material which covers the LED
`
`chip covered with the coating material including the cup of the mount lead, the inner lead
`
`and another electrode of the LED chip, wherein
`
`[0039]
`
`the LED chip is a nitride compound semiconductor and the coating
`
`material contains at least one element selected from the group consisting of Y, Lu, Sc, La,
`
`Gd and Sm, at least one element selected from the group consisting of Al, Ga and In and a
`
`phosphor made of garnet fluorescent material activated with cerium.
`
`[0040]
`
`The phosphor used in the light emitting diode of the present invention
`
`preferably contains an yttrium-aluminum—gamet fluorescent material that contains Y and
`
`A1.
`
`[0041]
`
`In the light emitting diode of the present invention, the phosphor may be a
`
`fluorescent material represented by a general foimula (Re;_,Sm,)3(Al1_sGas)5O12:Ce, where
`
`0Sr<l and Osssl and Re is at least one selected from Y and Gd.
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`[0042]
`
`Also in the light emitting diode of the present invention, a fluorescent
`
`material represented by a general formula (Y1_W_,GdpCeqSm,)3(Al1_5Gas)5O12 may be used
`
`as the phosphor, where O£ps0.8, 0.003Sq£0.2, 0.0003SrS0.08 and Osssl.
`
`[0043]
`
`In the light emitting diode of the present invention, the phosphor preferably
`
`contain two or more yttrium-aluminum-gamet fluorescent materials, activated with cerium,
`
`of different compositions including Y and Al, in order to control the emitted light to a
`
`desired wavelength.
`
`[0044]
`
`In the light emitting diode of the present invention, similarly, two or more
`
`fluorescent materials of different compositions represented by a general formula (Rel-
`
`,Sm,)3(A11-5Gas)5O12:Ce, where 0.<_r<l and Osssl and Re is at least one selected from Y
`
`and Gd may be used as the phosphor in order to control the emitted light to a desired
`
`wavelength.
`
`[0045]
`
`In the light emitting diode of the present invention, similarly, a first
`
`fluorescent material represented by a general formula Y3(Al1_sGaS)5O12:Ce and a second
`
`fluorescent material represented by a general formula Re3Al5O12:Ce, may be used as the
`
`phosphor where Osssl and Re is at least one selected from Y, Gd and La, in order to
`
`control the emitted light to a desired wavelength.
`
`[0046]
`
`In the light emitting diode of the present invention, similarly, yttrium-
`
`aluminum-gamet fluorescent material a first fluorescent material and a second fluorescent
`
`material may be used wherein a part of yttrium in the first and second fluorescent
`
`materials is substituted with gadolinium to different degrees of substitution as the
`
`phosphor, in order to control the emitted light to a desired wavelength.
`
`[0047]
`
`Generally, a fluorescent material which absorbs light of a short wavelength
`
`and emits light of a long wavelength has higher efficiency than a fluorescent material
`
`which absorbs light of a long wavelength and emits light of a short wavelength.
`
`It is
`
`preferable to use a light emitting component which emits visible light than a light emitting
`
`component which emits ultraviolet light that degrades resin (molding material, coating
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`material, etc.). Thus for the light emitting diode of the present invention, for the purpose
`
`of improving the light emitting efficiency and ensure long life, it is preferable that main
`
`emission peak of the light emitting component be set within a relatively short wavelength
`
`range of 400 nm to 530 nm in the visible light region, and main emission wavelength of
`
`the phosphor be set to be longer than the main emission peak of the light emitting
`
`component. With this arrangement, because light converted by the fluorescent material
`
`has longer wavelength than that of light emitted by the light emitting component, it will
`
`not be absorbed by the light emitting component even when the light emitting component
`
`is irradiated with light which has been reflected and converted by the fluorescent material
`
`(since the energy of the converted light is less than the band gap energy). Thus the light
`
`which has been reflected by the fluorescent material or the like is reflected by the cup
`
`wherein the light emitting component is mounted, making higher efficiency of emission
`
`possible.
`
`BRIEF DESCRIPTION OF THE DRAWINGS
`
`[0048]
`
`Fig.
`
`1
`
`is a schematic sectional view of a lead type light emitting diode
`
`according to the embodiment of the present invention.
`
`[0049]
`
`Fig. 2 is a schematic sectional view of a tip type light emitting diode
`
`according to the embodiment of the present invention.
`
`[0050]
`
`Fig. 3A is a graph showing the excitation spectrum of the garnet
`
`fluorescent material activated by cerium used in the first embodiment of the present
`
`invention.
`
`[0051]
`
`Fig. 3B is a graph showing the emission spectrum of the garnet fluorescent
`
`material activated by cerium used in the first embodiment of the present invention.
`
`[0052]
`
`Fig. 4 is a graph showing the emission spectrum of the light emitting diode
`
`of the first embodiment of the present invention.
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`[0053]
`
`Fig. 5A is a graph showing the excitation spectrum of the yttrium-
`
`aluminum-gamet fluorescent material activated by cerium used in the second embodiment
`
`of the present invention.
`
`[0054]
`
`Fig. 5B is a graph showing the emission spectrum of the yttrium-
`
`aluminum-gamet fluorescent material activated by cerium used in the second embodiment
`
`of the present invention.
`
`[0055]
`
`Fig. 6 shows the chromaticity diagram of light emitted by the light emitting
`
`diode of the second embodiment, while
`
`[0056]
`
`points A and B indicate the colors of light emitted by the light emitting
`
`component and points C and D indicate the colors of light emitted by two kinds of
`
`phosphors.
`
`[0057]
`
`Fig. 7 is a schematic sectional View of the planar light source according to
`
`another embodiment of the present invention.
`
`[0058]
`
`Fig. 8 is a schematic sectional View of another planar light source different
`
`from that of Fig. 7.
`
`[0059]
`
`Fig. 9 is a schematic sectional View of another planar light source different
`
`from those of Fig. 7 and Fig. 8.
`
`[0060]
`
`Fig. 10 is a block diagram of a display device which is an application of the
`
`present invention.
`
`[0061]
`
`Fig. 11 is a plan view of the LED display device of the display device of
`
`Fig. 10.
`
`[0062]
`
`Fig. 12 is a plan View of the LED display device wherein one pixel is
`
`constituted from four light emitting diodes including the light emitting diode of the
`
`present invention and those emitting RGB colors.
`
`[0063]
`
`Fig. 13A shows the results of durable life test of the light emitting diodes
`
`of Example 1 and Comparative Example 1, showing the results at 25°C and Fig. 13B
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`shows the results of durable life test of the light emitting diodes of Example 1 and
`
`Comparative Example 1, showing the results at 60°C and 90%RH.
`
`[0064]
`
`Fig. 14A shows the results of weatherability test of Example 9 and
`
`Comparative Example