Curriculum Vitae
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`Department of Chemical Engineering
`101D Gilman Hall
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`University of California, Berkeley
`Berkeley, CA 94720-1462
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`January, 2015
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`David Barry Graves
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`Phone: (510) 642-2214
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`Fax: (510) 642-4778
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` graves@berkeley.edu
`http://graves-lab.cchem.berkeley.edu/index.html
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`Born:
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`Education:
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`Employment:
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`Awards and
`Honors:
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`Professional
`Societies:
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`August 2, 1955, Daytona Beach, Florida
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`B.S., University of Arizona, 1978 (Chemical Engineering)
`M.S., University of Arizona, 1981 (Chemical Engineering)
`Ph.D., University of Minnesota, 1986 (Chemical Engineering)
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`Computer process control engineer, Standard Oil of California, 1978 - 81.
`Assistant Professor of Chemical Engineering, University of California,
`Berkeley, 1986 - 91
`Associate Professor of Chemical Engineering, University of California,
`Berkeley, 1991 - 1997
`Full Professor of Chemical Engineering, University of California,
`Berkeley, 1997 - present
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`1983 Electrochemical Society Summer Research Fellowship.
`1983 Electrochemical Society Young Author Award.
`1989 NSF Presidential Young Investigator Award.
`1998 Tegal Thinker Award
`2001 Fellow of the American Vacuum Society (AVS)
`2001 Plasma Prize, Plasma Science and Technology Division of the AVS
`2004 Fellow Institute of Physics
`2011-14 Chaire d’excellence, Nanoscience Foundation, Grenoble, France
`2011-16 Lam Research Corporation Distinguished Chair, UC Berkeley
`2014 Allis Prize for the Study of Ionized Gases, American Physical Society
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`American Institute of Chemical Engineers, American Physical Society,
`American Vacuum Society, Society for Plasma Medicine.
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`Professional and
`University Activities:
`Chairman, Department of Chemical Engineering Faculty Search
`Committee (1991-92; member, 1994-95; 2014-15)
`Instructor, University of California Extension Course on Reactive Plasmas,
`1992-93.
`Guest Editor, IEEE Trans. Plasma Sci., Special Issue on Modeling of Low
`Pressure Plasmas, 1991.
`Organizer and Chair, National AIChE meeting sessions on plasma
`processing, 1989, 1990, 1992.
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`Ex.1004 p.1
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`Organizing Committee, NATO ARW, Particles in Plasmas, 1993.
`Executive Committee, Gaseous Electronics Conference (fall 1991-96)
`Organizing Committee, Plasma Sources and Surface Interactions in
`Materials Processing Workshop, Fuji-Yoshida, Japan, (1995).
`Organizer, (Secretary) Gaseous Electronics Conference, 1995.
`Co-Chairman, National Research Council Panel on Database Needs in
`Plasma Processing, 1995-96.
`Chairman, Plasma Science and Technology Division of the American
`Vacuum Society (1994-95).
`Co-Editor, Report on Data Needs for Plasma Processing, National
`Research
`Council, (1995-96)
`Vice-Chair, Gordon Conference on Plasma Processing
`Science, (1996-1998)
`Chair Gordon Conference on Plasma Processing Science, (2000)
`Vice-Chair, Department of Chemical Engineering, UC Berkeley, 2002-06
`Associate Editor, Journal of Physics D, Institute of Physics, 2004-07
`Associate Editor, Journal of Vacuum Science and Technology, 2007-
`Maitre de Researche, Ecole Polytechnique, Paliseau, France, June 2006
`International Scientific Chair, CIP, Toulouse, France, June, 2007
`Co-Chair, "Plasma 2010-Low Temperature Plasma Science Workshop"
`(2008)
`Co-Editor, "Low Temperature Plasma Science Challenges for the Next
`Decade." (2008)
`Founding Member, Plasma Medicine Society, (2009)
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`RESEARCH INTERESTS:
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`Plasma medicine and biology
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`Thin film etching and deposition in semiconductor manufacturing
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`Plasma chemistry and plasma processing for semiconductors
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`Modeling and simulation of low temperature nonequilibrium plasmas
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`Plasma-surface interactions and plasma-surface chemistry
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`Nanofeature profile evolution simulation
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`Molecular dynamics of plasma-surface interactions
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`Particles and photons in plasmas
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`Optical and mass spectroscopy in low temperature plasmas
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`Environmental, health and safety issues in plasma processing
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`Microplasmas
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`Ex.1004 p.2
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`PAST RESEARCH SUPPORT:
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`Intel Corporation, 1986-88, 90-92, 1996, 2000
`California State MICRO, 1989 – 98
`California State UC SMART, 1998-2001
`IBM T.J. Watson Research Center, 1988-90
`SEMATECH, 1990-92; 1997-2001
`Sandia National Laboratory, 1993-96
`Lawrence Livermore National Laboratory, 1994-96
`Toshiba Corporation, 1997-98
`Hitachi, Ltd., 1997-98
`Mitsubishi Ltd., 1999-00
`ERC on Environmentally Benign Manufacturing for Semiconductors, 1996-2007
`Applied Materials Corporation, 1996-98
`Kodak Corporation, 1996-2002
`VAT Corporation, 2001
`Department of Energy, 2000-03, 2009-present
`Lam Research Corporation, 1995-99; 2002-3, 2004-present
`National Science Foundation, 1988-91; 1989-94; 1996-present
`Semiconductor Research Corporation, 1995-96; 1996-present
`Tokyo Electron Ltd., 2007-2009
`OnWafer Technologies 2005-2008
`UC Discovery
`Max Planck Institute for Extraterrestrial Physics
`Blum Center Developing Economies (UC Berkeley)
`Sustainable Products and Solutions Program (UC Berkeley)
`DOE/NSF Basic Plasma Science
`DOE Plasma Science Center
`Hitachi Corporation
`Lam Research Corporation
`Samsung Corporation
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`Brief Biography
`David B. Graves joined the University of California at Berkeley in 1986 after
`receiving his PhD in Chemical Engineering from the University of Minnesota. He
`is currently Full Professor of Chemical Engineering. David Graves served as vice-
`chair of the Department of Chemical Engineering from 2002-06 and again from
`2008-2011. His research interests are in the general areas of low temperature
`plasma science and gas discharge phenomena. His group studies the physics and
`chemistry of chemically active low temperature plasmas, including modeling and
`simulation, experimental studies of plasma using various gas phase and surface
`spectroscopies, dusty plasmas, plasma
`stability, plasma-electromagnetic
`interactions, plasma-organic materials interactions, and studies of radical-, ion-,
`electron- and photon-surface interactions in high vacuum beam systems. New
`topics include plasmas used for biomedical applications, food disinfection and
`agricultural applications. David Graves has graduated 29 PhD students, and has
`supervised over 25 postdoctoral scholars. Many of these former students and
`postdoctoral scholars are now in positions of leadership in industry and academe.
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`He has over 100 invited conference presentations and numerous invited seminars.
`He is author or co-author of over 200 peer-reviewed publications, 20 of which
`have at least 100 citations.
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`David Graves is a fellow of the American Vacuum Society and the Institute of
`Physics and was the recipient of the Electrochemical Society Young Author
`Award, the NSF Presidential Young Investigator Award, the Tegal Plasma Thinker
`Award, the 3rd annual Plasma Prize of the Plasma Science and Technology
`Division of the AVS and the winner of the Allis Prize of the APS. David Graves
`co-chaired the 1996 National Research Council (NRC) workshop and co-edited
`the "Report on Data Needs for Plasma Processing," published by the NRC. He
`fulfilled a similar role in 2008 for the Department of Energy "Plasma 2010-Low
`Temperature Plasma Science Workshop" and report on "Low Temperature Plasma
`Science Challenges for the Next Decade." He chaired the 2000 Gordon Research
`Conference on Plasma Processing Science and the American Vacuum Society
`Plasma Science and Technology Division. He was Associate Editor for the Journal
`of Physics D, Institute of Physics from 2004-07. David Graves has served on the
`executive and organizing committees of many international plasma science
`conferences. He was named Maitre de Researche at the Ecole Polytechnique,
`Paliseau, France, in June 2006. During the year 2007-08, he was an invited
`researcher at the Groupe des Recherches Energetique des Milieux Ionisee
`(GREMI) at the Universite d'Orleans in Orleans, France, supported through the
`foundation le STUDIUM. He was an invited researcher at the University of
`Perpignan (France) in 2010. He is a founding member of the Society for Plasma
`Medicine. He received a chaire d’excellence from the Nanoscience Foundation, in
`Grenoble France for 2011-2014 to study plasma-graphene interactions. He was
`appointed the first Lam Research Distinguished Chair in Semiconductor
`Processing for 2011-2016. He received the Will Allis Prize in Ionized Gases from
`the American Physical Society in 2014. David Graves has been a consultant for
`numerous corporations and law firms for both scientific consulting as well as for
`intellectual property lawsuits. He has given numerous workshops and short
`courses on plasma science and technology.
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`7.
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`PUBLICATIONS:
`1. “Flammability Characteristics and Structure of Pulverized Coal, Laminar
`Opposed Jet Diffusion Flame (with J.O.L. Wendt), 19th Symposium
`(international) on Combustion, The Combustion Institute, 1189-1196, 1982.
`2. “Modeling and Analysis of Low Pressure CVD Reactors,” D.B. Graves, K.F.
`Jensen, J. Electrochem. Soc. 130(9), 1950-1957, 1983.
`3. “CVD in Stagnation Point Flow,” D.B. Graves, C. Houtman and K.F. Jensen,
`J. Electrochem Soc. 133(5), 1986, 961-970.
`4. “Modeling of Reactors for Plasma Processing I. Silicon Etching by CF4 in a
`Radial Flow Reactor,” D.B. Graves, M. Dalvie and K.F. Jensen, Chem. Eng.
`Sci., 41(4), 653-660.
`5. “A Continuum Model of DC and RF Discharges,” D.B. Graves, K.F. Jensen,
`IEEE Trans. Plasma. Sci., PS-14 (2), 78-91, 1986.
`6. “Theoretical and Computational Problems in Modeling glow Discharges,”
`D.B. Graves and K.F. Jensen, Materials Research Soc. Symposia Proc., vol.
`68, J.W. Coburn, R.A. Gottscho and D.W. Hess, Eds., 29-230, 1986.
`“Modeling of Plasma Processing,” D.B. Graves, Proc. 6th Symposium on
`Plasma Processing, vol. 87-6, Electrochem. Soc., G.S. Mathad, G.C.
`Schwartz and R.A. Gottscho, Eds., 267-288, 1987.
`“Fluid Model Simulations of a 13.56 MHz RF Discharge: Time and Space
`Dependence of Rates of Electron Impact Excitation,” D.B. Graves, J. Appl.
`Phys., 62(1), 88-94, 1987.
`“Space-time Resolved Kinetics of Mixed Rare-gas-attaching Gas Plasmas,”
`D. B. Graves, R.A. Gottscho, G.R. Scheller and T. Intrator, J. Vac. Sci.
`Tech. A, 6(3), 1393-1396, 1988.
`10. “Quenching Rates of Ar Metastables in Radio-frequency Glow Discharges,”
`D.B. Graves, G.R. Scheller, R.A. Gottscho and T. Intrator, J. Appl. Phys.,
`64(2), 598-606, 1988.
`11. “Nonlinear Excitation and Dissociation Kinetics in Discharges through
`Mixtures of Rare and Attaching Gases,” D.B. Graves, R.A. Gottscho, G.R.
`Scheller and T. Intrator), J. Appl. Phys., 64(9) 4384-4397, 1988.
`12. “Local Field and Ballistic Electron Models for Low Pressure RF and DC
`Glow Discharges,” D.B. Graves, R.A. Gottscho, A. Mitchell, G.R. Scheller,
`N.L. Schryer and J.-P Boeuf, Proc. Seventh Symposium on Plasma
`Processing, 88-22), 1, Eds. G.S. Mathad, G.C. Schwartz and D.W. Hess,
`Electrochemical Society, Pennington, NJ, 1988.
`13. “Plasma Processing in Electronic Materials Processing,” D.B. Graves, AIChE
`J. (Journal Review), 35, 1-29, 1989.
`14. “Plasma-enhanced Etching and Deposition,” D.B. Graves and D.W. Hess,
`Chapter 8 in Microelectronics Processing, Advances in Chemistry 221,
`American Chemical Society, Washington, DC, 1989.
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`15. “Photoelectron-initiated Avalanches in Low Pressure Glow Discharges,”
`D.B. Graves, A. Mitchell, G.R. Scheller and R.A. Gottscho, Phys. Rev. A.,
`40, 5199, 1989.
`16. “Self-consistent model of a Direct-current Glow Discharge: Treatment of
`Fast Electrons,” D.B. Graves, M. Surendra and G.M. Jellum, Phys. Rev. A.,
`41, 1112, 1990.
`17. “Non-equilibrium Effects in DC and RF Glow Discharges,” D.B. Graves, M.
`Surendra, Chapter in Non-Equilibrium Effects in Ion and Electron
`Transport, edited by E.E. Kunhardt, R. Van Brunt, J. Gallagher and D.
`Hudson, 157, Plenum, New York, 1990.
`18. “Electron Heating in Low Pressure glow Discharges,” D.B. Graves, M.
`Surendra and I.J. Morey, Applied Physics Letters, 56, 1022, 1990.
`19. “Particulates in Aluminum Sputtering Discharges,” D.B. Graves and G.M.
`Jellum, J. Appl. Phys., 67, 6490, 1990.
`20. “Dynamic Measurements of Film Thickness over Local Topography in Spin
`Coating,” D.B. Graves, L.M. Manske and W.B. Oldham, Applied Physics
`Letters, 56, 2348, 1990.
`21. “Computer Applications in Plasma materials Processing,” D.B. Graves, and
`R.A. Gottscho, Computers in Physics, 584, November/December, 1990.
`22. “Particle-plasma Interactions in Low Pressure Discharges,” D.B. Graves and
`G.M. Jellum, Applied Physics Letters, 57, 2077, 1990.
`23. “Electron Acoustic Waves in Capacitatively Coupled, Low-pressure RF
`Glow Discharges,” D.B. Graves and M. Surendra, Phys. Rev. Lett., 66, 1469,
`1991.
`24. “Particle Simulations of Radiofrequency Glow Discharges,” D.B. Graves and
`M. Surendra, IEEE Trans. Plasma Sci., 19, 144, 1991.
`25. “Modeling and Simulation of Magnetically Confined, Low Pressure Plasmas
`in Two Dimensions,” D.B. Graves and R.K. Porteous, IEEE Trans. Plasma
`Sci., 19, 204, 1991).
`26. “Particle Thermophoresis in Low Pressure Glow Discharges,” D.B. Graves,
`G.M. Jellum and J.E. Daugherty, J. Appl. Phys., 69, 6923, 1991.
`27. “Film Thickness Profiles over Topography in Spin Coating,” D.B. Graves,
`L.M. Manske), J. Electrochem Soc., 138, 2115, 1991.
`28. “Capacitively Coupled Glow Discharges at Frequencies above 13.56 MHz,”
`D.B. Graves, M. Surendra, Applied Physics Letters, 59, 2091, 1991.
`29. “Self-Consistent DC Glow Discharge Simulations Applied to Diamond Film
`Deposition Reactors,” D.B. Graves, M. Surendra and L.S. Plano, J. Appl.
`Phys., 71, 5189, 1992.
`30. “Sheath Structure Around Particles in Low Pressure Discharges,” D.B.
`Graves, J.E. Daugherty, M.D. Kilgore, and R.K. Porteous, J. Appl. Phys.,
`72, 3934, 1992.
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`31. “Spin Coating over Topography,” D.B. Graves, L.M. Peurrung, IEEE Trans.
`Semicond. Manufac., 6, 72, 1993.
`32. “A Model of Particulates in Glow Discharge Plasmas,” D.B. Graves, M.D.
`Kilgore, J.E. Daugherty and R.K. Porteous, Proc. Electrochemical Society,
`92-18, 221, 1992.
`33. “Electrostatic Forces on Small Particles in Low Pressure Discharges, ” D.B.
`Graves, J.E. Daugherty and R.K. Porteous, J. Appl. Phys., 73. 1617, 1993.
`34. “Ion Drag on an Isolated Particulate in a Low Pressure Discharge,”
`D.B.Graves, M.D. Kilgore, J.E. Daugherty and R.K. Porteous, J. Appl.
`Phys., 73, 7195, 1993.
`35. “Modeling and Simulation of High Density Plasmas, D.B. Graves, H.-M. Wu
`and R.K. Porteous, Japanese Journal of Applied Physics, 32, 2999, 1993.
`36. “Particulate Temperature in rf Glow Discharges,” D.B. Graves, J.E.
`Daugherty, J. Vac. Sci. Tech. A, 11. 1126, 1993.
`37. “A Two-Dimensional Axisymmetric Model of a Magnetized Glow Discharge
`Plasma,” D.B. Graves, R.K. Porteous and H.-M. Wu, Plasma Sources
`Science and Technology, 3, 25, 1994.
`38. “Transport and Heating of Small Particles in High Density Plasma Sources,”
`D.B. Graves, M.D. Kilgore, J.E. Daugherty, and R.K. Porteous, J. Vac. Sci.
`and Tech. B, 12, 486, 1994.
`39. “Neutral Transport in High Plasma-Density Reactors,” D.B. Graves, M.D.
`Kilgore, and H.M. Wu, J. Vac. Sci. and Tech. B, 12, 494, 1994.
`40. “A Two-Dimensional Fluid Model of High Density Inductively Coupled
`Plasma Sources,” D.B. Graves, R.A. Stewart and P. Vitello, J. Vac. Sci. and
`Tech. B, 12, 478, 1994.
`41. “The Gaseous Electronics Conference Radio-Frequency Reference Cell: A
`defined parallel plate radio-frequency system for experimental and
`theoretical studies of plasma-processing discharges,” (with 32 others), Rev.
`Sci. Instrum., 65, 140, 1994.
`42. “Plasma Processing,” (Invited Review), IEEE Trans. Plasma Sci., 22, 31,
`1994.
`43. “Charging, Transport and Heating of Particles in Radiofrequency and
`Electron Cyclotron Resonance Plasmas,” D.B. Graves, J.E. Daugherty, M.D.
`Kilgore, and R.K. Porteous, Plasma Sources Sci. Technol., 3, 433, Jan,
`1994.
`44. “Comparison Between a Two-Dimensional Simulation and a Global
`Conservation Model for a Compact ECR Plasma Source,” D.B. Graves, H-
`M. Wu, and R.K. Porteous, Plasma Sources Sci. Technol., 4, 22, Oct, 1994.
`45. “Plasma Uniformity in High-density Inductively Coupled Plasma Tools,”
`R.A. Stewart, P. Vitello, D.B. Graves, E.F. Jaeger, and L.A. Berry, Plasma
`Sources Sci. Technol., 4, 36, Aug, 1994.
`46. “A Comparison of Particle in Cell and Fluid Model Simulations of Low-
`Pressure Radio Frequency Discharges,” T.E. Nitschke and D.B. Graves, J.
`Appl. Phys., 76, (10), 5646, Nov, 1994.
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`47. “Global Model of Plasma Chemistry in a High Density Oxygen Discharge,”
`C. Lee, D.B. Graves, D.W. Hess, and M.A. Lieberman, J. Electrochemical
`Society, 141, 1546, 1994.
`48. “Chemical and Physical Sputtering of Fluorinated Silicon,” M.E. Barone and
`D.B. Graves, J. Appl. Phys., 77, (3), 1263, Feb, 1995.
`49. “Role of Etch Products in Polysilicon Etching in a High Density Chlorine
`Discharge,” C. Lee, D.B. Graves, and M.A. Lieberman, Plasma Chemistry
`Plasma Processing, 16, 99, 1996.
`50. “Derivation and experimental verification of a particulate transport model for
`a glow discharge,” J.E. Daugherty and D.B. Graves, J. Appl. Physics, 78,
`2279, 1995.
`51. “Matching an RF Sheath Model to a Bulk Plasma Model,” T.E. Nitschke and
`D.B. Graves, IEEE Trans. Plasma Sci., 23, 717, 1995.
`52. “Molecular Dynamics Simulations of Direct Reactive Ion Etching of Silicon
`by Fluorine and Chlorine,” M.E. Barone and D.B. Graves, J. Appl. Phys.,
`78, 6604, 1995.
`53. “Molecular Dynamics Simulations of Plasma-Surface Chemistry,” M.E.
`Barone and D.B. Graves, Plasma Sources Science and Technology, 5, 1,
`1996.
`54. “Molecular Dynamics Simulations of Direct Reactive Ion Etching: Surface
`Roughening of Silicon by Chlorine,” M.E. Barone, T.O. Robinson and D.B.
`Graves, IEEE Transactions on Plasma Science, 24, 77, 1996.
`55. “In Situ Characterization of the Transient Behavior of Particles in Low
`Pressure Plasmas,” U.I. Schmidt and D.B. Graves, J. Vac. Sci. Tech. A, 14,
`595, 1996.
`56. “Two-dimensional fluid model of an inductively coupled plasma with
`comparison to experimental spatial profiles,” J.D. Bukowsk, D.B. Graves
`and P. Vitello), J. Applied Phys., 80, 2614, 1996.
`57. “Molecular dynamics simulations of fluorosilyl species impacting fluorinated
`silicon surfaces with energies from 0.1 eV to 100 eV,” B.A. Helmer and
`D.B. Graves, J. Vac. Sci. Tech. A, 15(4), 2252, 1997.
`58. “The recombination of chlorine atoms at surfaces,” G.P. Kota, J.W. Coburn
`and D.B. Graves, J. Vac. Sci. Tech. A, 16(1), 270, 1998.
`59. “Role of Oxygen in Ion-Enhanced Etching of Poly-Si and WSix with
`Chlorine,” G.P. Kota, J.W. Coburn and D.B. Graves, J. Vac. Sci. Tech. A,
`16(4), 2215 1998.
`60. “Fluid, Kinetic and Hybrid Simulation Strategies for Modeling Chemically
`Complex Inductively Coupled Plasmas,” M. Li, H. Date and D.B. Graves,
`Electron Kinetics and Applications of Glow Discharges, Ed. U. Kortshagen
`and L. Tsendin, Plenum Press, New York, p. 349-366, 1998.
`61. “Molecular dynamics simulations of Ar+ and Cl+ impacts onto silicon
`surfaces: distributions of reflected energies and angles,” D.B. Graves and
`B.A. Helmer, J. Vac. Sci. Tech. A, 16(6), 3502, 1998.
`62. “Energetic
`ion bombardment of SiO2 surfaces: Molecular dynamics
`simulations,” C.F. Abrams and D.B. Graves, J. Vac. Sci. Tech. A, 16(5),
`3006, 1998.
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`63. “Heterogeneous recombination of atomic bromine and fluorine,” G.P. Kota,
`J.W. Coburn and D.B. Graves, J. Vac. Sci. Tech. A, 17(1), 282-290, 1999.
`64. “Heteronuclear and homonuclear surface abstraction reactions of Cl, Br and
`F, with G.P. Kota, J.W. Coburn and D.B. Graves,” J. Appl. Phys., 85(1), 74,
`1999.
`65. “Molecular dynamics simulations of Cl2+ impacts onto a chlorinated silicon
`surface: energies and angles of the reflected Cl2 and Cl fragments,” B.A.
`Helmer and D.B. Graves, J. Vac. Sci. Tech. A, 17(5), 2759-2770, 1999.
`66. “A Model of Point-of-Use Plasma Abatement of Perfluroinated Compounds
`with An Inductively Coupled Plasma,” D.B. Graves, A. Fiala, M.
`Kiehlbauch, and S, Mahnovski, J. Appl. Phys., 86(1), 152-162, 1999.
`67. “Effects of plasma conditions on the shapes of features etched in Cl2 and
`HBr Plasmas. I. Bulk crystalline silicon etching,” M.A. Vyvoda, H. Lee, M.
`Malyshev, F.P. Klemens, M. Cerullo, V.M. Donnelly, D.B. Graves, A.
`Kornblit, and J. Lee, J. Vac. Sci. Tech. A, 16(6), 3247, 1998.
`68. “Numerical Modeling,” D.B. Graves, M. Li and M. Vyvoda, Chapter 8 in
`Ionized Physical Vapor Deposition, Ed. J. Hopwood, Academic Press, NY,
`1999.
`69. “Feature Evolution Simulations of Copper Seed Layer Deposition Using
`Atomic-level Particle Scattering Information,” M.A. Vyvoda, C.F. Abrams
`and D.B. Graves, IEEE Trans. Plasma Sci., 27(5), 1433, 1999.
`70. “3D Spatiokinetic Distributions of Sputtered and Scattered Products of Ar+,
`and Cu+ Impacts onto the Cu Surface: Molecular Dynamics Simulations,”
`C.F. Abrams and D.B. Graves, IEEE Trans. Plasma Sci., 27(5), 1426, 1999.
`71. “Sputtering and deposition of off-normal, near-threshold Cu+ bombardment:
`Molecular dynamics simulations,” C.F. Abrams and D.B. Graves, J. Appl.
`Phys., 86(4), 2263, 1999.
`72. “Mass Spectrometric Detection of Reactive Neutral Species: Beam to
`Background Ratio,” H. Singh, J.W. Coburn and D.B. Graves, JVST A, 17(5),
`2447-2455, 1999.
`73. “Trapping dynamics of ethane on Si(100)-(2x1): molecular beam
`experiments and molecular dynamics simulations,” C.T. Reeves, B.A.
`Ferguson, C.B. Mullins, G.O. Sitz, B.A. Helmer and D.B. Graves, J. Chem.
`Phys., 111, 7567-7575, 1999.
`74. “The Role of Sidewall Scattering in Feature Profile Evolution During Cl2
`and HBr Plasma Etching of Silicon,” M.A. Vyvoda and D.B. Graves, JVST
`B, 18, 820, 1999.
`75. “Inductively-coupled, point-of-use plasma abatement of PFCs and HFCs
`from etch processes utilizing O2 and H2O as additive gases,” E.J. Tonnis,
`V.H. Vartanian, L. Beu, T. Lii, R. Jewett and D.B. Graves, JVST A, 18, 393,
`2000.
`76. “Hardmask Charging during Cl2 Plasma Etching of Silicon,” M.A. Vyvoda
`M. Li and D.B. Graves, J. Vac. Sci. Tech. A, 17(6), 3293, 1999.
`77. “Molecular dynamics simulations of Si etching by energetic CF3
`Abrams and D.B. Graves, J. Appl. Phys., 86, 5938, 1999.
`
`+,” C.F.
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`78. “Measurements of the electron energy distribution function in molecular
`gases in an inductively coupled plasma,” H. Singh and D.B. Graves, J. Appl.
`Phys., 87(9), 4098, 2000.
`79. “Appearance potential mass spectrometry: Discrimination of dissociative
`ionization products,” H. Singh, J.W. Coburn and D.B. Graves, JVST A,
`18(2), 299, 2000.
`80. “New C-F interatomic potential for molecular dynamics simulation of
`fluorocarbon film formation,” J. Tanaka, C.F. Abrams and D.B. Graves,
`JVST A, 18(3), 938, 2000.
`+ etching of Si: Atomistic simulation and a
`81. “On the active surface layer in CF3
`simple mass balance model,” C.F. Abrams and D.B. Graves, JVST A, 18(2),
`411, 2000.
`82. “Molecular dynamics simulations of Si etching with energetic F+: Sensitivity
`of the results to the interatomic potential,” C.F. Abrams and D.B. Graves, J.
`Appl. Phys., 88, 3734, 2000.
`83. “Measurements of the electron energy distribution function in molecular
`gases in a shielded inductively coupled plasma,” H. Singh and D.B. Graves,
`J. Appl. Phys., 88(7), 3889, 2000.
`+: Product
`84. “Atomistic simulation of silicon bombardment by energetic CF3
`distributions and energies,” C.F. Abrams and D.B. Graves, Thin Solid Films,
`374, 150, 2000.
`85. “Surface Loss Coefficients of CFx and F Radicals on Stainless Steel,” H.
`Singh, J.W. Coburn and D.B. Graves, JVST A, 18, 2680, 2000.
`86. “Vacuum beam studies of photoresist etching kinetics,” F. Greer, J.W.
`Coburn, and D.B. Graves, JVST A, 18, 2288, 2000.
`87. “Recombination coefficients of O and N radicals on stainless steel,” H.
`Singh, J.W. Coburn and D.B. Graves, J. Appl. Phys., 88, 3748, 2000.
`88. “Measurements of Neutral and Ion Composition, Neutral Temperature, and
`EEDF in a CF4 Inductively Coupled Plasma,” H. Singh, J.W. Coburn and
`D.B. Graves, JVST A, 19(3), 719-729, 2001.
`89. “Atomistic Simulation of Fluorocarbon Deposition on Si by Continuous
`+,” C.F. Abrams and D.B. Graves,
`Bombardment with Energetic CF+ and CF2
`JVST A, 19(1), 175-181, 2001.
`90. “Temperature Resolved Modeling of Plasma Abatement of Perfluorinated
`Compounds,” M.W. Kiehlbaugh and D.B. Graves, J. Appl. Phys., 89(4),
`2047-2057, 2001.
`91. “D and F radical reaction kinetics on photoresist,” F. Greer, J.W. Coburn and
`D.B. Graves, JVST B, 20(1), 145-153, 2002.
`92. “Molecular Dynamics Simulations of
`Interactions with
`Ion-Surface
`Applications to Plasma Processing,” C.F. Abrams and D.B. Graves,
`Advances in Chemical Engineering, Vol. 28, 149-202, 2001.
`93. “Modeling argon
`inductively coupled plasmas: The electron energy
`distribution function and metastable kinetics,” M.W. Kiehlbaugh and D.B.
`Graves, J. Appl. Phys., 91(6), 3539-3546, 2002.
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`94. “Ion-induced damage and annealing of silicon. Molecular dynamics
`simulations,” D. Humbird and D.B. Graves, Pure and Applied Chemistry,
`74(3), 419-422, 2002.
`95. “Surface chemistry associated with plasma etching processes,” D. Humbird
`and D.B. Graves, Applied Surface Science, 192(1-4), 72-87, 2002.
`96. “Controlling Surfaces in Plasma Processing: Role of Ions via Molecular
`Dynamics Simulations of Surface Chemistry,” D. Humbird and D.B.
`Graves, Plasma Sources Science and Technology, 11(3A Special Issue
`SI):A191-A195, 2002.
`97. “The Effect of Neutral Transport on the Etch Product Lifecycle during
`Plasma Etching of Silicon in Chlorine Gas,” M.W. Kiehlbaugh and D.B.
`Graves, JVST A, 21(1):116-126, 2003.
`98. “Fundamental Beam Studies of Deuterium and Fluorine Radical Reaction
`Kinetics on Surfaces,” F. Greer and D.B. Graves, JVST, 21(4):1391-1402,
`2003.
`99. “Argon and Oxygen Ion Chemistry Effects in Photoresist Etching,” F. Greer,
`L. Van, D. Fraser, J.W. Coburn and D.B. Graves, JVST B, 20(5): 1901-1906,
`2002.
`100. “C4F8 Dissociation in an Inductively Coupled Plasma,” M. T. Radtke, J. W.
`Coburn and D.B. Graves, JVST A, 21(4):1038-1047, 2003.
`101. “Neutral gas temperatures measured within a high-density, inductively
`coupled plasma abatement device,” E. Tonnis and D.B. Graves, J. Vac. Sci.
`Tech A, 20(5):1787-1795, 2002.
`102. “Inductively Coupled Plasmas in Oxygen: Modeling and Experiment,” M.W.
`Kiehlbaugh and D.B. Graves, JVST A, 21(3): 660-670, 2003.
`103. “Molecular dynamics simulations of
`ion bombardment on hydrogen
`terminated Si(001) 2x1 surface,” K. Satake and D.B. Graves, JVST A,
`21(2):484-490, 2003.
`104. “Silicon epitaxial growth on the Si(001)2x1 surface from silane using
`dynamic Monte Carlo simulations,” K. Satake and D.B. Graves, J. Chem.
`Phy., 118(14):6503-6511, 2003.
`105. “Fundamental beam studies of radical enhanced atomic layer deposition of
`TiN,” F. Greer, J.W. Coburn, D. Fraser and D.B. Graves, JVST A, 21(1):96-
`105, 2003.
`106. “Influence of modeling and simulation on the maturation of plasma
`technology: Feature evolution and reactor design,” M.J. Kushner and D.B.
`Graves, JVST A, 21(5 Suppl S):S152-S156, 2003.
`107. “Fluorine atom subsurface diffusion and reaction in photoresist,” F. Greer, D.
`Fraser, J. Coburn and D.B. Graves, J. Appl. Physics, 94 (12), 7453-7461,
`2003.
`108. “Microhollow cathode discharge stability with flow and reaction,” D. Hsu
`and D.B. Graves, J. Physics D-Applied Physics, 36(23):2898-2907, 2003.
`109. “Improved interatomic potentials for silicon-fluorine and silicon-chlorine,”
`D. Humbird and D.B. Graves, J. Chemical Physics, 120(5), 2405-2412,
`2004.
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`110. “Molecular dynamics simulations of Ar+-induced transport of fluorine
`through fluorocarbon films,” G.S. Oehrlein, X.F. Hua, D. Humbird and D.B.
`Graves, Applied Physics Letters, 84(7):1073-1075, 2004.
`111. “Atomistic Simulations of Spontaneous Etching of Silicon by Fluorine and
`Chlorine,” D. Humbird and D.B. Graves, J. Applied Physics, 96(1):791-798,
`2004.
`112. “Fluorocarbon plasma etching of silicon: Factors controlling etch rate,” D.
`Humbird and D.B. Graves, J. Appl. Phys., 96(1):65-70, 2004.
`113. “Mechanism of silicon etching in the presence of CF2, F, and Ar+,” D.
`Humbird and D.B. Graves, J. Appl. Phys., 96(5):2466-71, 2004.
`114. “Molecular dynamics simulations of Si-F surface chemistry with improved
`interatomic potentials,” D. Humbird and D.B. Graves, Plasma Source
`Science and Technology, 13(3), 548-52, 2004.
`115. “Vacuum beam studies of fluorocarbon radicals and argon ions on Si and
`SiO2 surfaces,” Y. Kimura, J.W. Coburn and D.B. Graves, JVST A,
`22(6):2508-16, 2004.
`116. “Atomistic simulations of Ar+-ion-assisted etching of silicon by fluorine and
`chlorine,” D. Humbird and D.B. Graves, JVST A, 23(1):31-8, 2005.
`117. “Mode transitions in low pressure rare gas cylindrical ICP discharge studied
`by optical emission spectroscopy,” T Czerwiec and D.B. Graves, J. Phys. D,
`Appl. Phys., 37(20), 2827-40, 2005.
`118. “Microhollow cathode discharge reactor chemistry,” D. Hsu and D.B.
`Graves, Plasma Chemistry & Plasma Processing, 25 (1), 1-17, 2005.
`119. “CF and CF2 radical kinetics and transport in a pulsed CF,” J.P. Booth, H.
`Abada, P. Chabert and D.B. Graves, Plasma Sources Science & Technology,
`14(2), 273-82, 2005.
`120. “Molecular dynamics simulations of plasma-surface interactions: importance
`of visualization tools,” D. Humbird and D.B. Graves, IEEE Transactions on
`Plasma Science, 33 (2), 226-7, 2005.
`121. “Etching of ruthenium coatings in O2- and Cl2-containing plasmas,” C.-C.
`Hsu, J.W. Coburn and D.B. Graves, J. Vac. Sci. Tech., 24(1), 1-8, 2005.
`122. “Silicon etch by fluorocarbon and argon plasmas in the presence of
`fluorocarbon films,” J. Vegh and D.B. Graves, J. Vac. Sci. Tech., 23(6),
`1598-1604, 2005.
`123. “Nitrogen dissociation in a low pressure cylindrical ICP discharge studies by
`actinometry and mass spectroscopy,” T. Czerwiec, F. Greer and D.B.
`Graves, J. Phys. D, 38 (24), 4278-89, 2005.
`124. “Comparison of model and experiment for Ar, Ar/O2, and Ar/O2/Cl2
`inductively coupled plasmas,” C.-C. Hsu, J.W. Coburn and D.B. Graves, J.
`Phys. D, 39(15), 3272-84, 2006.
`125. “Corona-glow transition in the atmospheric pressure RF-excited plasma
`needle,” Y. Sakiyama and D.B. Graves, J. Phys. D, 39(16), 3644-52, 2006.
`126. “Finite Element Analysis of an atmospheric pressure RF-excited plasma
`needle,” Y. Sakiyama and D.B. Graves, J. Phys. D, 39(16), 3451-60, 2006.
`
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`127. “Electron impact dissociation cross Sections for C2F6 ,” D.W. Flaherty, M.A.
`Kasper, J.E. Baio, D.B. Graves, H.F. Winters, C. Winstead, and V. McKoy,
`J. Phys. D, 39(20), 4393-96, 2006.
`128. “Penetration of fluorine into the silicon lattice during exposure to F atoms, F2
`and XeF2: Implications for spontaneous etching reactions,” H.F. Winters,
`D.B. Graves, D. Humbird and S. Tougard, JVST A, 25(1), 96-103, 2007.
`129. “Modeling of atmospheric-pressure plasma columns sustained by surface
`waves,” Y. Kabouzi, D.B Graves, E. Castanas-Martinez, and M. Moisan,
`Phys. Rev. E, 75(1), Art. 016402, Part 2, 2007.
`130. “Molecular dynamics simulations of Ar+ bombardment of Si with
`comparison to experiment,” D. Humbird, D.B. Graves, A.A.E. Stevens, and
`W.M.M. Kessels, JVST A, 25(6), 1529-33, 2007.
`131. “Nonthermal atmospheric
`spherical
`rf plasma
`in one-dimensional
`coordinates: Assymetric sheath structure and the discharge mechanism,” Y.
`Sakiyama and D.B. Graves, J. Appl. Phys., 101(7), 073306, 2007.
`132. “Measurement and modeling of time- and spatial-resolved wafer surface
`temperature in inductively coupled plasmas,” C.-C. Hsu, M.J. Titus and
`D.B. Graves, J. Vac. Sci. Tech. A, 25(3), 607-614, 2007.
`133. “Ar+ bombardment of 193 nm photoresist: morphological effects,” E. Pargon
`D.G. Nest, and D.B. Graves, J. Vacuum Science & Technology B, 25(4),
`1236-43, 2007.
`134. “Nonthermal atmospheric RF plasma in 1-D spherical coordinates: a
`parametric study,” Y. Sakiyama and D.B. Graves, IEEE Transactions on
`Plasma Science, 35(5), 1279-86, 2007.
`135. “Near-Surface Modification of Polystyrene by Ar+: Molecular Dynamics
`Simulations and Experimental Validation,” J. Vegh, D. Nest, D.B. Graves,
`R. Br