FILE HISTORY
`08/567,224
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`INVENTORS:
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`DANIEL L. FLAMM , WALNUT CREEK, CA
`(US)SHIMAO YONEYAMA YAMANASHI,
`(JP)
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`TITLE:
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`PROCESS DEPENDING ON PLASMA
`DISCHARGES SUSTAINED BY
`INDUCTIVE COUPLING
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`FILED:
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`12-04-1995
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`COMPILED:
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`07 NOV 2014
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`Intel Corp. et al. Exhibit 1007
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`Sub-filass
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`PATENT :
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`V. UTILITY
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`ATTORNEY'S
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` I ‘ Foreign priority claimed 0 ‘V95 D "0
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`USC 119 conditions met 0 yes
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`u.s-. DEPT. or. coMMEnoE - Patent and Trademark orIIc'e1-I5c‘T-43‘sL (rev. 7-94)
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`PARTS oI=‘ APPLICAIN .
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`_IA lications Examiners’
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`CLAIMS. LLOWED ‘
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`Total Claims
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`IssuE
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`(Rev. 3/92)
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`Primary Examiner
`PREPARD FOR ISSUE’
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`WARNING: The information disclosed herein may be restricted. Unauthorized disclosure may be prohibited
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`by the United States Code '|’It|e 35. Sections 122, 181 and 36_8. Possession outside the U.S.
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`Patent & Trademark Office is restricted to authorized employees and contractorsonly.
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`‘NUMBER
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` ‘Label
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`Int'e1C01'p_;-et‘ a1.’ ’Exhihit‘1AO07
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`Intel Corp. et al. Exhibit 1007
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`08/567,224
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`PROCESS DEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE
`COUPLING
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`Transaction History
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`1/2/1996
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`2/14/1995
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`6/22/1995
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`7/3/1996 Application Captured on Microfilm
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`7/18/1996 Case Docketed to Examiner in GAU
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`11/8/1996 Power to Make Copies and/or Inspect
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`9/16/1997 Mail-Petition Decision - Granted
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`12/9/1997 Case Docketed to Examiner in GAU
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`12/10/1997 Mail Restriction Requirement
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`12/10/1997 Restriction/Election Requirement
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`7/17/1998 Aband. for Failure to Respond to O. A.
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`7/20/1998 Mail Abandonment for Failure to Respond to Office Action
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`4/9/2001 Petition Entered
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`8/13/2001 Mail-Petition Decision -"Granted
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`Intel Corp. et al. Exhibit 1007
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`Intel Corp. et al. Exhibit 1007
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`E‘xh*vibitA1-(.h):(».)7 é
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`V (FRONT)
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`_ %1nté1‘C01'
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`Intel Corp. et al. Exhibit 1007
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`Intel Corp. et al. Exhibit 1007
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` “-5- PATENT APPLICATION
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`SERIAL NUMBER
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`03/567,224
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`FILING DATE
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`12/04/95
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`GROUP ART UNIT
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`1112
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`DANIEL L. FLAMM, WALNUT CREEK, CA; GEORGY VINOGRADOV, YAMANASHI,
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`’SI-IIMAO YONEYAMA, YAMANASHI,
`JAPAN.
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`JAPAN;
`A
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`"**coNTIN‘UING DATA********~kjk*~k7***-k*~k**'k
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`VERIFIED .
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`**FOREIGN/PCT APPLICATIONS************
`VERIFIED
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`FOREIGN FILING LICENSE GRANTED 06/22/96
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`$880.00
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`_1e55s-000300
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`RICHARD T OGAWA
`TOWNSEND & TOWNSEND & CREW
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`TWO EMQARCADERO CENTER awn FLOOR
`SAN FRANCISCO CA
`94111
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`PROCESS DEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE
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`COUPLING
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`that annexeg here_t_o is _a triie. copy fr0m_ the _records of the United States _
`This is to certif
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`Patent and Tra emark Office of the application which is identified above.
`By authority of the
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`COMMISSIONER OF PATENTS AND TRADEMARKS
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`,Ifit‘ge1 C01'p.et :11. Exhibit 1007
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`Intel Corp. et al. Exhibit 1007
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`PATENT APPLICATION SERTAL NO.
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`na/567224
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`U.S. DEPARTMENT oF'coMMERcE
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`PATENT AND TRADEMARK OFFICE
`FEE RECORD SHEET
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`PTO?1556
`(5/87)
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`Inte_:1C‘.0V1‘p.’eta1.‘ Exhibit 1007 V
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`Intel Corp. et al. Exhibit 1007
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`';i=T‘xprefss Mail" Label-No. EM2324448l4US'
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`‘Date off Deposit December 4 1995
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`' United States Postal Service "Express Mail Post Office
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`tofAddressee" service under 37 CFR 1.10 on the date
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`[X] patent application of
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`.Inventor(s): Daniel L. Flamm, Georgy Vinogradov, Shimao Yoneyama
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`For: PROCESS DEPENDING ON PLASMA DISCHARGES SUS'l‘AlNED BY INDUCTIVE COUPLING
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`[ ]. This application claims priority from each of the following
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`[X] Patent Application (including 36 pages specification, 3 pages claims, 1 page abstract).
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`[X] ‘13 sheet(s) of [ ] formal
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`An assignment of the invention to
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`A [ ] signed [ ] unsigned Declaration & Power of Attorney.
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`A verified" statement to establish small entity status under 37 CFR 1.9 and 37 CFR 1.27 [] is enclosed [ ] was filed
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`in the earliest of the above-identified patent app1ication(s).
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`[ ] A certified copy of :3‘
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`In view. of the Unsigned Declaration as filed with-thlsgappliczation and pursuant to 37 CFR §1.53(d),
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`Attorneys for Applicants
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`Intel" Corp. _et a1. Exhibit 1007
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`Intel Corp. et al. Exhibit 1007
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`PATENT APPLICATION _
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`COMMISSIONER OF PATENT AND TRADEMARKS
`
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`Washington, 1).. C. 20231
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`Sir:
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`Ihereby certify that this is being deposited with the
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`a United States Postal Service "Express Mail Post Office
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`Inventor(s):‘ Daniel L. Flamm, Georgy Vinogradov. Shimao Yoneyama
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`For: PROCESS DEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE COUPLING
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`in the earliest of the above-identified patent application(s).
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`] A certified copy of a ___________________________ application.
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`filed withlthisiapplication and pursuant to 37 CFR §1L53(d),
`I In view of the Unsigned Declaration
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`Applicant requests deferraiof the filing fee until submission of the Missing
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`.DO NOT CHARGE THE FILING FEE AT THIS TIME.
`
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`
`
`chard T. Ogawa
`
`
`Reg. No.: 37,692
`
`
`Attorneys for Applicants
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`/
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`
`'
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`Telephone:
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`IntelCo1‘p. et al. I Exhibit_1007
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`COMMISSIONER or PATENT A_ND TRADEMARKS
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`I hereby certify that this is being deposited with the
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`United States Postal Service "Express Mail Post Office
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`to Addressee" service under 37' CFR 1.10 on the date
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`-' and is ddressed to -.- mmissioner
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`Sir:
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`Transmittedpherewith for filing is the
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`[ ] design patent application of
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`[ ] continuation-in-part patent application of
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`Inventor(s): Daniel L. Flamm, Georgy Vinogradov, Shimao Yoneyama I
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`For: PROCESS VDEPENDING ON PLASMA DISCHARGES SUSTAINED BY INDUCTIVE COUPLING
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`[ ] This application claims priority from each of the following Application. Nos./filing dates:
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`in the earliest of the above-identified patent application(s).
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`Applicant requests deferral of the filing fee until submission of the Missing Parts of Application.
`
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`
`
`
`
`
`
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`DO NOT CHARGE THE FILING FEE AT THIS TIME.
`
`Telephone:
`
`(415) 326-2400
`no\work\l6655\3-npp.tm
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`_
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`I
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`
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`A,
`
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`
`
`chard T. Ogawa
`
`
`Reg. N0.: 37,692’
`
`
`Attorneys for Applicants ‘
`
`’
`
`'
`
`Intel Corp. et al. Exhibit 1007
`
`Intel Corp. et al. Exhibit 1007
`
`

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`
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`
`
`16655-003000
`
`PATENT APPISICATION
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`T SUSTAINED BY I4NDU;(;ITI§VE COUPLING
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`Inventors:
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`. D,a{nielVL. Flamm, a citizen of the§United‘ States, residing at'476
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`Green View Drive, Walnut Creek; California 94596;
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`Georgy Vinogradov, a citizen of Russia, residing at Dragons
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`Mansion Apt. 306, 5860-5 Ryuchi, Futaba-cho, Kitakomagun,
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`Yamanashi, 400-01 Japan; and
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`Shimao Yoneyama, a citizen oi’ Japan, residing at 5875-4 Ryuchi,
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`Futaba-cho,_lKitakornagun, Yamanashi, 400-01 ‘Japan.
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`Assignee:
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`MC Electronics Co., Ltd.
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`Entity Status:
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`. TOWNSEND and TOWNSEND and CREW
`
`
`' Steuart Street Tower
`One Market
`
`
`San Francisco, CA 94105
`
`(415) 326-2400
`
`
`
`Intéi com. et ai Exhibit 41007
`
`Intel Corp. et al. Exhibit 1007
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`,i1a/557224 24- «/0 he;
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`BACKGROUND OFTHE4 lNVEl\ITION
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`This invention relatesgenerally to plasma processing. More
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`particularly, the invention is for plasma processing of devices using an inductive ‘
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`discharge. This invention is illustrated in an examp1e_with regard to plasma 1
`etching and resist stripping of semiconductordevices. The invention also is I‘
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`illustrated with regard to chemical vapor deposition (CVD) of semiconductor_
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`applicability. Merely by way of example, the invention also can be applied in
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`other plasma etching applications, and deposition of materials such as silicon,
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`I silicon dioxide, silicon nitride, polysilicon, ?amo1ig othersV.:
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`Plasma processing techniques can occur in a variety of
`semiconductor manufacturing processes. Examples of plasma processing
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`techniques occur in chemical dry etching (CDE), ion-assisted etching (IAE), and
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`plasma enhanced chemical vapor deposition" (PECVD),.including remote plasma
`deposition }(RPCVD) and ion-assisted plasma enhanced" chemical vapor deposition T
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`' (IAPECVD). These plasma processing tecphniquesdoften rely upon. radio frequency
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`power (rf) supplied to an inductive coil for providing power to gas phase species in
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`forming a plasma.’
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`devices.‘ For instance, chemical dry etching generally dependson gas—surface
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`reactions involving these, neutral species without ‘substantial ion bombardment.
`In othermanufacturing processes, ;ion bombardment to substrate
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`surfaces is oftenundesirablle. This ion bombardment, however, is known to have
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`harmful effects on properties of material layers in devices and excessive ion
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`bombardment, flux and energy can lead to intermixing of materials in. adjacent
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`device layers, breaking down oxide and "wear out," injecting of contaminative"
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`material formed in the processing environment into substrate material layers,’_
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`harmful changes in substrate morphology (e._g. arnophotization), etc.“
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`Ion assisted etching processes,‘ however, rely upon ion bombardment"
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`to the substrate surface in defining selectedfilms. But these ion assisted etching
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`processes commonly have a lower_ selectivity relative tolconventional CDE
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`. bombardment to substrates:are' to be avoided.
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`One commonly used chemical dry etching technique is conventional
`photoresist stripping, often. termed ashing or stripping. Conventional resist
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`stripping relies upon a reaction between a nfeutral gas phase species and a surface
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`material layer, typically for removal.
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`products with thersurface material layer forits removal. The neutral gas phase
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`by a coil (e.g., helical coil, etc.) operating at a selected frequency in a
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`conventional photoresist stripper. An example of the conventional photoresist
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`stripper is a quarter—wave helical resonator fstripper, which
`described by US.
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`- Patent No. 4,368,092 in the name of 'Steinlierg e_t Q.
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`_ Referring to the above, an objective in chemical dry etching is to
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`processed to maintain the desired etching selectivity.
`In practice, however, it is
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`techniques generally attempt to control ion flux by suppressing the amount of
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`charged species in the plasma source reaching the process chamber. V A variety of
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`techniques for suppressing these charged species have been proposed.
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`a source by interfering with convective and diffusive transport of charged species.
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`They tend to promote recombination of charged species by either increasing the-
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`These baffles, however, cause loss of desirable neutral etchant
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`species as well. The baffles, shields, and alilce, also are often cumbersome.‘ A
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`Baffles, gshields, or the large separation distancesialso cause undesirable
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`recombignative loss of active species and sometimes cause radio frequency power
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`loss and other prdblems. These bafflesandi shields alsoare a potential source of
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`particulate contamination, which is often damaging to integrated circuits.
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`Baffles, shields, spatial separation, and alike, when used alone also
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`are often insufficient to substantially prevent unwanted parasitic plasma currents;
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`These plasma currents are generated between the wafer and the plasma source, or
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`between? the plasmasourceiand walls of thelchamber. _It is commonly known that
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`s when initial charged ‘species’ levels are present in an electrical field, the charged
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`species are accelerated andvvdissociative collisions withneutral particles can
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`multiply the concentration of charge to higher levels. «If sufficient "seed" levels of
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`charge and rf potentials are present; the parasitic‘ plasma in the vicinity of the
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`process lwafer can reach harmful charge density levels.
`In some cases, these
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`charge densities maybe similar to or evengreater than plasma density within the
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`source plasma region, thereby causing even more ion flux to the substrate.
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`Charge densities also create a voltage_difference between the plasma
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`source and processing chamber or substrate support, which can have an additional
`deleteridus effect.‘ This voltage difference-enhances electric fields that can
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`accelerate extraction of charge from the plasma source. Hence, their presence
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`often induces increased levels of charge to be irregularly transported from the
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`plasma source to process substrates, therebyfl eausing non-uniform ion assisted
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`etchings
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`Coiiventional ion assisted plasma etching, however, often requires
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`"control and maintenance of ion flux intensity and uniformity within selected
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`process limits and within selected process energy ranges.. Control and maintenance .
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`of ion flux intensity andruniformity are oftendifficult to achieve using conventional
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`techniques. For instance, capacitive coupling between high voltage selections -
`of the cell and the plasma discharge often cause highlanduncontrollable plasma
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`potentials relative to ground.
`It is generallylunderstood that voltage difference
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`'10
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`30“
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`Intel Corp. et a1_. Exhibit 1007_
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`Intel Corp. et al. Exhibit 1007
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`» 4},
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`16655-003000‘ 4‘
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`between: the plasma and ground can cause damaging high energy ion bombardment
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`of articles being processed by the plasma, as ‘illustrated by_U.S. Patent No.
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`. 5,234,529 in the name of' Johnson.
`It is further often understood that rf _
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`component of the plasma potential varies in_ time" since it is derived from a
`coupling to time varying
`excitation. Hence, the energy of charged particles
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`from plasma in conventional "inductive sources is spread over arelatively wide
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`range of energies, which undesirably tends to introduce uncontrolled variations in
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`the processing of articles by the plasma.
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`The voltage difference between the region just outside of a plasma
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`‘source and the processing chamber can be modified by introducing. internal
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`' conductive shields or electrode elements into theiprocesvsing apparatus downstream
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`i of the source. When the plasma potential is elevated with respect to these shield
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`electrodes, however, there is a tendency "to generate an undesirable capacitive
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`discharge betweenpthe shield and plasma source.’ These electrode elements are
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`often a-source of contamination and thei.likel=i;hood for contamination is even
`greater when there is capacitive discharge (ionvbombardment from capacitive _'
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`discharge is a potential source of sputtered‘ material). ' Contamination is damaging
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`to the manufactu_re of integrated circuit devices. I
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`Another limitation is that the'shield_or electrode elements generally ~
`require small holes thereinas structural eleifnents‘.
`‘These small holes are designed
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`to allow gas to flow therethrough. The small holes, however_, tend to introduce"
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`unwanted pressure drops and neutral species recombination.
`If the holes are made
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`larger, the plasma from the source tends to survive transport through the holes and
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`unwanted downstream charge flux_ will often: ‘result.
`In addition, undesirable
`discharges to these holes in shields can, at times, produce an even more
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`undesirable hollow cathodeieffect.
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`In conventional helical_ resonator designs, conductive external
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`shields are interposed between the inductive‘ power'(e.g., coil, etc.) and walls of i
`the vacuum vessel containing the plasma."
`ivariety limitations with these external
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`capacitive shielded plasmajdesigns (e.g., helieal resonator, inductive discharge,
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`etc.) have been observed. in particular, the capacitively shielded design often
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`- Exhibit 1007
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`Intel Corp. et al. Exhibit 1007
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`5 I
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`16655-003000
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`produces plasmas that are difficult to tune even ignite. Alternatively, the use
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`of unshielded plasma sources (e.g., conventional quarter‘-wave resonator,
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`conventionalvhalf-.wave resonator, et‘c.;) attainga substantial plasma potential from
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`capacitive coupling to thecoil, and hence are prone to: create uncontrolled.lpar_asitic
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`_ plasma currents to grounded surfacesf Accordingly, the use of either the shielded
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`or the unshielded sources using conventional quarter and half-wave rf frequencies
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`produce undesirahyle results.
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`In many conventional plasma sources a means of cooling. is required
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`to maintain the plasma source and substratesbeing treated below a maximum
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`temperature limit. Power dissipation in the structure causes heating and thereby
`_increases the difficulty and expense of implementing effective cooling means.
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`Inductive currents may also be coupled from ltheexcitation coil into internal or
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`capacitive shieldsiandthese currents are an additional source of undesirable power
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`loss and heating. Conventional‘ capacitive “shielding in helical resonator discharges
`_ utilized-’a shield which was: substantially split along the long axis of the resonator
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`to lessen eddy cuirent loss} ' However, such ‘a shield substantially perturbs the
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`resonator characteristics owing to unwanted? capacitive coupling and current which
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`flows from the coil to the shield.
`Since there are no general design equations, nor
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`are propertiescurirently known for resonators which are "loaded" with a shield I
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`alongthe axis, sources using this design must be sized: and? made to work by trial
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`and error.
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`I_n inductive discharges, it is highly desirable to be able to
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`substantially control the plasma potentialtrelativev to ground ipotential, independent
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`of input power, pressure, gas composition and other variables.
`In many cases, it
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`is desired to have theplastna potential bevstibstaritially-at ground potential (at least
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`offset from ground potential by an amount insigiiificanitlyé different from the
`floatingpotential ior intrinsic DC plasma‘po:tentia'l).
`For example, whena plasma
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`, source‘ is utilized lto generate neutral species to be transported downstream of the
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`source for use in fashing resiston a semiconductor device substrate (a wafer or flat
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`panel eliectronicdisplay), the concentration and potential of charged plasma species
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`in the reaction zone are desirably reduced to avoid charging damage from electron
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`-
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`10'
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`Intel Corp. et al. Exhibit 1007
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`

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`6
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`16655-OO3000_
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`or ioniccurrent from the plasma to the device. When there is a substantial
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`potential difference between plasma in the source and grounded surfaces beyond
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`the source, there is a tendency for unwanted parasitic plasma discharges to form
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`outside of the sourcelregioiij
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`’ Another undesirable effect of potential difference is the acceleration
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`of ions toward grounded surfaces and subsequent impact of the energetic ions with
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`surfaces. High energy ionbombardment may cause. lattice damage to the device
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`substrate being processed and may cause
`chamber wall or other chamber’
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`materials to sputter and contaminate device iwafers.
`In other plasma processing
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`"procedures, however, some ion bombardment may be necessary or desirable, as is
`the case particulaily for anisotropic ion.-iliidiliced plasma etching procedures (for a
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`discussion of ion-jenhanced plasma etching rlriechalnisms s'_¢e Flamm (Ch. 2,pp.94-
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`183 in lglasma Etehing, An Introduction, Di M. ‘Manos and D.L. Flamm, eds.,
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`Academic Press, -1989)). Consequently, luncontrolledfpotential differences, such as"
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`that caused" by "stray" capacitive coupli_ng«f_r"om the coil of an inductive plasma
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`source to the plasma, are undesirable.
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`Referring to the above limitations, conventional plasma sources also
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`have disadvantages when used in conventional plasma enhanced CVD techniques.
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`These techniques commonly form a reaction of a gas composition in a plasma
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`discharge. One conventional plasmaienhanced technique relies upon ions aiding in.
`rearrangirig and stabilizingjlthe film, provided the bombardment from the plasma is
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`not sufficiently eiliergetic to damage the untleilyiiig' substrate‘ or the growing film.
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`Conventional resonators and other types of iiidu_c:tive discharges often produce _
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`parasitic plasma currents. from capacitive coupling, which often detrimentally
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`influences film quality. e.g., an inferior’ film, etc. These -parasitic pla