Hardware, Semiconductor & Electronics Expert Stanley Shanfield: CV
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`Page 1 of 3
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`STANLEY SHANFIELD , HARDWARE, SEMICONDUCTOR & ELECTRONICS EXPERT.
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`Dr. Stanley
`Shanfield has an
`extraordinary depth
`of experience in
`multiple areas of
`hardware
`engineering and
`semiconductors.
`
`STANLEY SHANFIELD
`Expert Witness and Consultant in Hardware Engineering, Semiconductors and Electronics
`
`Education:
`
`Massachusetts Institute of Technology, Ph.D., Physics, 1981
`University of California, Irvine, B.S. Cum Laude, Physics, 1977
`
`Educational Awards:
`
`Outstanding Research Project, U.C. Regents Award, 1977
`Phi Beta Kappa, 1977
`Four Year Scholarship, Tuition & Research, ERDA/DOE, 1977-1981
`
`Hands-On Professional Expertise:
`
`Semiconductor Physics & Chemistry
`Semiconductor Fabrication: Silicon and III-V Materials
`Semiconductor Device & Integrated Circuit Engineering
`Semiconductor Equipment: Front & Back End
`RF Design and Fabrication
`Digital Design & Fabrication
`Semiconductor Manufacturing in Silicon and III-V Materials
`MEMS Design and Fabrication: Electrical, Optical, & Sensing Devices
`Fiber Optic Device Design and Fabrication
`Integrated Optics & Electro-Optical Devices
`Plasma Physics
`
`Specialized Training:
`
`Global Positioning Electronics, Systems and Components
`Six Sigma Semiconductor Manufacturing
`Microwave Engineering
`US Patent Law in Technology
`Patent Application and Prosecution
`Semiconductor Plasma Processing
`Thin Film Physics and Technology
`MEMS-based Gyroscopes and Accelerometers
`Thermoelectric Materials & Technology
`Phased Array Radar Engineering
`Antennas and Electromagnetic Propagation
`Solid State Optical Devices
`Fiber Optic Communication System Operation
`HALT and HAST Reliability Testing Methods
`
`Professional Experience:
`
`Draper Laboratory Cambridge, MA
`
`2003 – present
`
`http://rubinanders.com/stanley-shanfield/curriculum-vitae/
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`9/23/2016
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`Ex. 1003.001
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`

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`Hardware, Semiconductor & Electronics Expert Stanley Shanfield: CV
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`Page 2 of 3
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`Division Leader, Advanced Hardware Development
`Distinguished Member of Technical Staff
`Technical Director
`
`Led division (about 80 staff) in re-invigorating multi-chip integrated circuit module facility, more
`than doubling associated revenues in two years. By most accounts, made division a viable
`business & technological entity again. Invented & led implementation of an ultra-miniature
`electronics fabrication technology which became a top laboratory priority. Led team in realization &
`fabrication of a newly designed precision MEMS-based gyroscope and associated ASIC. Found
`funding and led team in developing a miniature power source with energy density at least two
`orders of magnitude higher than any source previously built. Developed fabrication technology for
`semiconductor-based low phase noise oscillator design, allowing for receiver operation with
`extremely low signal strength. Awards and recognition received.
`
`Clarendon Photonics Newton, MA
`
`2001 – 2003
`
`Director, Packaging & Integration
`
`30 person photonic chip startup with $18 million 2nd round funding. Invented and productized new,
`low cost and reliable semiconductor processing, packaging and pig-tailing technology for optical
`add-drop multiplexer. Established assembly and packaging process, and developed control
`electronics. Partner with Micron Technologies, using their R&D semiconductor facility.
`
`AXSUN Technologies Bedford/Billerica, MA
`
`1999 – 2001
`
`Vice President, Operations
`
`1999 – 2000
`
`Initially 3 staff with $6 million funding. Designed, fabricated and productized AXSUN’s micro-
`electromechanical (MEM) Fabry-Perot optical filter. Patents granted on semiconductor processing
`and control electronics. Completed facility and semiconductor processing design, then completely
`equipped. Raised 2nd round funding for $36 million. Established process and fabrication facility in
`Belfast, Northern Ireland for producing thick oxide silicon-on-insulator material.
`
`Director, Manufacturing & Wafer Fab Technology
`
`2000 – 2001
`
`After 3rd round funding, led device manufacturing, creating wafer fab and assembly infrastructure;
`hired 70+ people, led production. Delivered first generation product for revenue to multiple
`customers. Converted pure technology to dominant company revenue with high yield.
`
`Company eventually purchased by Volcano Technologies, San Diego.
`
`Raytheon Corporation Lexington/Andover, MA
`
`1985 – 1999
`
`Manager, Semiconductor Operations
`
`1996 – 1999
`
`Built and led a 300 employee, $60 million revenue 24/7 semiconductor development and
`manufacturing operation resulting from the consolidation of a number of smaller organizations. Key
`player in technological development and recipient of Raytheon’s 6 Sigma Leadership training.
`Decision maker in Texas Instrument group acquisition, providing significant expert opinion on
`semiconductor and design facilities. Obtained state-of-art yields using best available steppers,
`deep reactive ion etching, plasma assisted CVD, and ion-implantation equipment, and disciplined
`design-for-manufacturing circuit design and layout methodology.
`
`http://rubinanders.com/stanley-shanfield/curriculum-vitae/
`
`9/23/2016
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`Ex. 1003.002
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`

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`Hardware, Semiconductor & Electronics Expert Stanley Shanfield: CV
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`Page 3 of 3
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`1992 – 1996
`Research Laboratory Manager
`Leader of a 90 employee development and contract research organization in high performance
`semiconductor devices and circuits, measurement, assembly and wafer fab. Led a team which
`invented and implemented a major revenue generating technology (.$100 million) based on
`semiconductor device development (pseudomorphic high electron mobility transistor). Increased
`outside research funding by 50% in 3 years through superior technical performance relative to
`competitors.
`
`1985 – 1992
`Section Manager, Semiconductors
`Led a MM-Wave Circuit and Module Development program over 2 years leading to production win
`of a satellite terminal electronics generating $320 million in sales. Developed designed processes
`for fabricating high power, high frequency multi-function integrated circuits, and combining high
`performance digital and analog devices in a single integrated circuit.
`
`Spire Corporation Bedford, MA
`
`1981 – 1984
`
`Staff Scientist
`Senior Staff Scientist
`
`Developed new methods for low temperature deposition of plasma-assisted CVD epitaxial silicon.
`Wrote joint papers with MIT professor, and had process adopted by equipment manufacturers.
`Built, operated and characterized ion-assisted deposition system for making coating for
`semiconductor and machine tool industries. Process eventually purchased by Kennametal, Inc.
`
`HOME ABOUT BANKING/SECURITIES PATENTS/SCIENCE ECONOMICS DAMAGES CLIENT LIST FAQS CONTACT US
`
`© 2015 Rubin Anders. All rights reserved.
`
`http://rubinanders.com/stanley-shanfield/curriculum-vitae/
`
`9/23/2016
`
`Ex. 1003.003
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`

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`Publications by Stan Shanfield, Hardware Engineering Expert Witness
`
`Page 1 of 2
`
`STANLEY SHANFIELD , HARDWARE, SEMICONDUCTOR & ELECTRONICS EXPERT.
`Need a different expert?
`
`HOME CURRICULUM VITAE PUBLICATIONS PATENTS CONTACT EXPERT WITNESS
`
`Like
`
`Tweet
`
`Dr. Stanley
`Shanfield has an
`extraordinary depth
`of experience in
`multiple areas of
`hardware
`engineering and
`semiconductors.
`
`STANLEY SHANFIELD
`Expert Witness and Consultant in Hardware Engineering, Semiconductors and Electronics
`
`Restricted Publications & Reports
`
`• Process Sequence for Formation of Ultra-High Density Multi-Chip Modules:
`A high yield, low cost method for creating a system-in-a-package consisting of numerous semiconductor die, passive
`components, and sensors. Process formed basis for new (2008) facility.
`
`• Design and Method of Fabrication of Ultra-High Density Radioisotope Power Source:
`In test, a miniature power source that achieves energy density more than 1000X the best chemical battery. Method
`uses planar semiconductor processing of bulk thermoelectric materials.
`
`• Design and Method of Achieving Extremely Low Crystal Oscillator Phase Noise:
`Method developed for very low power refrigeration of quartz or sapphire crystal resonators, resulting in extremely low
`phase noise oscillators. The low phase noise allows extremely high sensitivity in digital receivers, including GPS
`receivers, leading to use in extremely low signal conditions.
`
`• Design, Evaluation & Production of MEMS-based Fabry-Perot Interferometer
`Design and method for ultra-compact spectral analyzer made using semiconductor and optical thin film processing.
`
`• Design & Evaluation of Ultra-Fast Control Electronics for Integrated Optical Multiplexer
`Design and performance evaluation of silicon-based integrated optical multiplexer using chip-based local heating
`
`• Design and Fabrication of Q-band MILSTAR Communications Terminal Transmitter
`Record power and efficiency 44 GHz transmitter design using new transistor design, and combined waveguide
`
`Key Publications (selected)
`
`• Process Characterization of PSG and BPSG Plasma Deposition, J. Electrochem. Soc., Volume 131, Issue 9,
`pp. 2202-2203
`
`• A double-recessed Al0.24GaAs/In0.16GaAs pseudomorphic HEMT for Ka- and Q-band power Applications,
`Electron Device Letters, IEEE, Volume 14, Issue 9, pp. 456 – 458
`
`• Formation of Thick Metal Structures on GaAs MMICs Using Image Reversal Lithography and Evaporated
`Metal Deposition
`J. Electrochem. Soc., Volume 136, Issue 9, pp. 2687-2690
`
`• Contact Hole Etching in Load-Locked Hexagonal Reactive Ion Etch System, J. Electrochem. Soc., Vol. 131,
`No. 8, 1984
`
`• An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with Improved Breakdown Voltage for
`X- and Ku-band power applications
`Microwave Theory and Techniques, IEEE Transactions on, Volume 41, Issue 5, May 1993, pp. 752 – 759
`
`• Hot-electron-induced Degradation of Metal-Semiconductor Field-Effect Transistors, GaAs Integrated Circuit
`Symposium, 1994. Technical Digest 1994., 16th Annual Volume , Issue , 16-19 Oct. 1994, pp. 259
`
`•
`
`Ion Beam Deposition of Cubic Boron Nitride, J. Vac. Sci. Technol. A Volume 1, Issue 2, pp. 323-325
`
`HOME ABOUT BANKING/SECURITIES PATENTS/SCIENCE ECONOMICS DAMAGES CLIENT LIST FAQS CONTACT US
`
`© 2015 Rubin Anders. All rights reserved.
`
`http://rubinanders.com/stanley-shanfield/publications/
`
`9/23/2016
`
`Ex. 1003.004
`
`

`
`Publications by Stan Shanfield, Hardware Engineering Expert Witness
`
`Page 2 of 2
`
`http://rubinanders.com/stanley-shanfield/publications/
`
`9/23/2016
`
`Ex. 1003.005
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`

`
`Hardware Engineering and Semiconductors Expert Witness Work: Stanley Shanfield
`
`Page 1 of 1
`
`STANLEY SHANFIELD , HARDWARE, SEMICONDUCTOR & ELECTRONICS EXPERT.
`Need a different expert?
`
`HOME CURRICULUM VITAE PUBLICATIONS PATENTS CONTACT EXPERT WITNESS
`
`Like
`
`Tweet
`
`Dr. Stanley
`Shanfield has an
`extraordinary depth
`of experience in
`multiple areas of
`hardware
`engineering and
`semiconductors.
`
`STANLEY SHANFIELD
`Expert Witness and Consultant in Hardware Engineering, Semiconductors and Electronics
`
`Cases
`
`Case: Bluestone Innovations, LLC vs. LG Electronics (“Vizio”), No. 3:13-cv-01770 (N.D. CA)
`Type: Patent Infringement
`Law Firm: Glaser, Weil, Fink, Jacobs, for LG Electronics
`Details: Q3 2013- Q4 2014, Semiconductor Material Growth Process and Device Design
`
`Case: Intel Corporation vs. X2Y, Inc., ITC Investigation No. 337-TA-781
`Type: Patent Infringement
`Law Firm: WilmerHale, for Intel
`Details: 2011-2012. Technology at Issue: Integrated Circuit Fabrication Processes, Layout and Electrical Design. Ttestified at
`ITC. Intel prevailed on all infringement counts; Administrative Law Judge quoted Shanfield expert testimony multiple times
`supporting his conclusions
`
`Case: Intel Corporation vs. X2Y, Inc., ITC Investigation No. 337-TA-781
`Type: Patent Infringement
`Law Firm: WilmerHale, for Intel
`Details: 2011-2012. Technology at Issue: Integrated Circuit Fabrication Processes, Layout and Electrical Design. Ttestified at
`ITC. Intel prevailed on all infringement counts; Administrative Law Judge quoted Shanfield expert testimony multiple times
`supporting his conclusions
`
`Case: Case: Solannex, Inc. vs. Miasole, Inc., Northern District of California, CV11 0171 EDL,
`Type: Inc., PatentInfringement
`Law Firm: Quinn Emanuel Urquhart & Sullivan, for Solannex
`Details: 2011. Technology at Issue: Solar Cell Fabrication Process, Layout, and Mechanical Packaging.
`
`Case: Case: Spansion LLC vs. Samsung Electronics,, Eastern District of Virginia, Civil Action No. 1:10CV881
`Type: Patent Infringement
`Law Firm: Client: Fish and Richardson, for Samsung
`Details: 2011. Technology at Issue: Integrated Circuit Fabrication Processes, Layout and Electrical Design Managed all
`reverse engineering work, performed on-site layout inspection; this background work was important in reaching settlement
`prior to trial. Samsung prevailed on all infringement counts; Samsung successful with one countersuit infringement claim with
`more than $100 million damages.
`
`Case: Quimonda A.G. vs. Seagate Technology, LSI Corporation, ITC Investigation No. 337-TA- 665
`Type: Patent Infringement
`Law Firm: Steptoe and Johnson, for Seagate and LSI
`Details: Technology at Issue: Integrated Circuit Fabrication Processes, Layout and Electrical Design. Outcome: Seagate and
`LSI prevailed on all infringement counts; ITC decision affirmed in US Federal Court
`
`HOME ABOUT BANKING/SECURITIES PATENTS/SCIENCE ECONOMICS DAMAGES CLIENT LIST FAQS CONTACT US
`
`© 2015 Rubin Anders. All rights reserved.
`
`http://rubinanders.com/stanley-shanfield/expert-witness/
`
`9/23/2016
`
`Ex. 1003.006