(1)
`
`H5-24319A
`
`(19) Japanese Patent Office (JP)
`
`(12) Official Gazette of Published Unexamined Patent (A)
`
`(1 1) Unexamined Patent Document Publication Number: H5-243191
`
`(43) Date ofPub1icatior1: September 21, .1993
`
`(51) Int. Cl. 5
`H01L 21/302
`
`ID No. JPO Fiie No.
`C 7353-4M
`
`'
`
`FI
`
`czsr 4/00
`
`//
`
`HUSH 1/46
`
`A 8414-4K
`
`9014-2G
`
`Tech. Indie.
`
`Request ofExamination: Not Requested
`
`No. of claims: 1
`
`(4 pages total)
`
`(21) Application Number: I-14-75199
`
`(22) Date of Application: February 26, 1992
`
`(71) Applicant
`
`000004237
`
`NEC Corporafion
`
`5—7—1,Shiba, Minaro-kw, Tokyo
`
`(72) Inventor
`
`Akita Okada
`
`c/0 NEC Corporation
`
`5—7—1,Shi'ba, ii/finato-ku, Tokyo
`
`(74) Representative Chu Sugana, patent attorney
`
`
`
`(54) [Title ofthe Invention] Dry Etching Device
`
`Page 1 of 15
`
`Samsung Exhibit 1013
`Samsung Electronics Co., Ltd. V. Daniei L. Flamm
`
`

`
`(2)
`
`H5~24-319A
`
`
`
`(‘S7) [Abstract]
`
`[Purpose] As controlling the etched shape
`of a material is critical in a dry etching
`process, the shape control is enabled by
`adjusting the semiconductor substrate
`temperature.
`
`[Configuration] Inside an electrode 31 that
`places a semiconductor substrate 32,
`multiple controlling medium supply paths
`22, 23, 24 are formed, and the temperature
`control is performed with each sets of
`controllers l, 2, 3, cooling medium
`reservoirs 10, ll, 12, and temperature
`monitors 28, 29, 30. With this unit
`configuration, controlling etching hoies and
`other etched shapes may be achieved in the
`etching depth direction.
`
`4, S, 6 Signal cables
`Controllers
`1, 2, 3
`10, ll, 12 Cooling medium reservoirs
`Signal cables
`7, 8, 9
`l6, l7, l8 Valves
`l3, 14, 15 Pumps
`22, 23, 24 Cooling medium supply paths
`l9, 20, Ill Valves
`25, 26, 27 Cooling medium supply paths
`28, 29, 30 Temperature monitors
`31 Electrode
`32 Semiconductor substrate
`33 Upper part of electrode
`34 Vacuum process chamber
`
`Page 2 of 15
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`

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`(3)
`
`H5—24319A
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`[Claims]
`
`[Claim 1] A dry etching device, which etches a material on a semiconductor substrate using
`plasma generated from a process gas that is introduced in a vacuum process chamber by applying
`
`radio frequency Wave power, comprises:
`
`'
`
`multiple cooling medium supply paths,
`
`multiple cooling medium reservoirs for supplying the cooling medium to the cooling
`
`medium supply path, and
`
`temperature controlling devices, each of which adjusts the individual cooling medium
`
`reservoir temperature.
`
`[Detailed Description of the Invention]
`
`[0001]
`
`[Technology Field to which the Invention Relates] The present invention relates to a
`semiconductor fabrication device, and in particular, a temperature control system in a dry etch
`device that adjusts the temperature of an electrode that places a semiconductor substrate.
`
`[0002]
`
`[Prior Art] Figure 3 depicts a temperature control system of a dry etching device of the prior art.
`Here, a controller 1 controls a cooling medium reservoir 10 through a signal cable 7 so that a
`monitoring temperature that a temperature monitor 28 sends through a signal cable 4 is adjusted
`
`to be equal to a set temperature.
`
`[0003] The cooling medium reservoir 10 controls the temperature of the cooling medium in the
`cooling medium reservoir 10, according to the set temperature that the controller 1 sends through
`
`the signal cable 7.
`
`[0004] A pump 13 transfers the cooling medium in the cooling medium reservoir 10 to an
`electrode 31 through a cooling medium supply path 22 and a valve 16 for adjusting the cooling
`medium temperature so that the monitoring temperature output to the controller 1 from the
`temperature monitor 28 through the signal cable 4 and the setting temperature of the controller 1
`are maintained to be the same, and then the cooling medium returns to the cooling medium
`
`reservoir 10 through a cooling medium supply path 25 and a valve 19.
`
`[0005] As described above, because the temperature control system of the dry etching device of
`the prior art only has a cooling medium reservoir 10, cooling medium supply paths 22 and 25,
`and a temperature monitor 28, controlling temperature of the electrode 31 that places the
`semiconductor substrate 32 focuses only a single spot. Here the reference numerals 33 and 34
`
`are an upper electrode and a vacuum chamber, respectively.
`
`Page 3 of 15
`
`

`
`(4)
`
`H5-2431914
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`[0006]
`
`[Problems that the Invention is to Solve] Because the above type of dry etching device has only a
`cooling medium reservoir and a ternperature monitor, it is impossible to control the all over
`temperature of the semiconductor substrate 32 precisely withinitemperature difference in the
`range of l to 2' degrees although the temperature of the semiconductor substrate 32 within a
`certain temperature range may be maintained sufficiently.
`
`[0007] On the other hand, because the etched shape of material to be etched on the
`semiconductor substrate 32 depends on the surface temperature distribution of the semiconductor
`substrate 32, unless a good temperature control within the substrate surface is established, there
`is a technological issue in which the etching shape varies on the surface of the semiconductor
`substrate 32.
`
`[0008] Figure 4 shows a cross section of a silicon oxide film on a semiconductor substrate,
`etched with a dry etching device equipped with a temperature control system of the prior art.
`The setting temperature of the electrode is 120 degrees. Figure 4(a) is a cross section at the
`central part of the semiconductor substrate, and (b) is a cross section of the circumferential part.
`The reference numerais 40, 41, 42, and 43 are a semiconductor substrate, a silicon oxide film, a
`photo resist, and a reaction product, respectively.
`
`[0009] As a semiconductor substrate is being exposed to plasma during the etching step, the
`electrode is heated up above the setting temperature. In particular, the circumferential part of the
`semiconductor substrate has less cooling efficient than the central part has whence the former is
`heated up to a higher temperature. Therefore, when the temperature control is carried out for
`cooling the circumferential part to a required temperature, the central part tends to be excessively
`cooled down. Figure 2(b) shows the temperature distribution of the semiconductor substrate
`surface. When the circumferential temperature is 7'0 degrees, the central part becomes iess
`
`temperature by 10'to 30 degrees.
`
`[0010] Taking an example of a contact hole shown in Figure 4, there are excessive reaction
`products attached to the central part that is cooled more than the circumferential part. This
`reaction product impedes the etching process to terminate the process incompletely, being lack of
`etching in. the central part compared with the circumferential part. In particular, this '
`technological issue is critical when a fine contact hoie of 0.5 pm or less of a VLSI is fabricated.
`
`[0011] The purpose of the present invention is to provide a dry etching device that enables the
`etching shape control by controlling the semiconductor substrate temperature.
`
`[0012]
`
`[Means for Solving the Problems] In order to achieve the aforementioned purpose, the dry
`etching device of the present invention is an etching device where radio frequency power is
`
`Page 4 of 15
`
`p
`
`’
`
`E’
`
`
`
`
`

`
`{5}
`
`H5-24319A
`
`applied to a process gas introduced in a vacuum chamber for converting the gas into plasma,
`which is used to etch a material to be etched on a semiconductor substrate surface, comprising
`multiple cooling paths formed inside an electrode that places a semiconductor substrate, multiple
`cooling reservoirs for supplying cooling medium to the cooling medium.supply path, multiple
`cooling medium, and temperature controllers, each of which controls a cooling medium reservoir
`
`temperature individually.
`
`[0013]
`
`[Operation of the Invention] The electrode that places a semiconductor substrate has multiple
`cooling supply paths configured inside the electrode for supplying temperature-controlled
`
`cooling medium to cooling medium paths.
`
`[0014]
`
`[Embodiment] Referring to figures herein, an embodiment of the present invention is described
`hereinafter. Figure 1 is a schematic diagram of the embodiment of the present invention.
`
`[0015} In Figure 1, inside an electrode 31 that places a semiconductor substrate 32, there are
`cooling medium paths 22, 23, 24, 25, 26, and 27 coaxially from the center of the semiconductor
`substrate 32.
`
`[0016] The controller 1 controls the cooling medium reservoirs 10 through the signal bale 7 for
`making the monitoring temperature the temperature monitor 28 sends through the signal cable 4
`
`equal to the set temperature.
`
`[0017] The cooling reservoir 10 controls the temperature of the cooling medium inside the
`cooling reservoir 10, following the set temperature the controller 1 sends through the signal cable
`7.
`
`[0018] The pump 13 sends the cooling medium in the cooling medium reservoir 10 to the
`electrode 31 through the cooling medium supply path 22 and the valve 16, and the cooling
`medium temperature is adjusted by making the monitoring temperature that the temperature
`monitor 28 sends through the signal cable 4 equal to the set temperature, and then the cooling
`medium returns to the cooling medium reservoir 10 through the cooling medium supply path 25
`and the valve 19.
`
`[0019] This process may be similarly applied to the controllers 2 and 3, the signal cables 8 and 9,
`the cooling medium reservoirs 11 and 12, the pumps 14 and 15, the valves 17, I8, 20, and 21, the
`cooling supply paths 23, 24, 26, and 27, and the temperature monitors 29 and 30.
`
`[0020] As shown in Figure 2(a), the embodiment of the present invention makes the temperature
`distribution on a semiconductor substrate uniform.
`
`[0021]
`
`Page 5 of 15
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`'
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`

`
`(5)
`
`H5-2431912.
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`[Effect of the Invention] As described above, the present invention has multiple cooling medium
`supply paths configured inside the electrode that places a sem-iconductor substrate, multiple
`
`cooling reservoirs that supply the cooling medium to the cooling medium supply path, and
`
`temperature control devices, each of which controls a coolingmedium reservoir so that may
`
`control the semiconductor substrate temperate distribution to be uniform.
`
`-
`
`[0022] With this this device scheme, it is possible to control and maintain a temperature-
`dependent uniform etching shape of the material to be etched on a semiconductor substrate.
`
`[0023] The present invention finds a substantial effect when forming a contact hole at a deep
`location of small diameter as seen in forming a contact hole of VLSI. in fact, the inner surface
`
`of a contact hole of 0.5 um diameter may be etched Well by adjusting the semiconductor
`
`substrate temperature distribution within 5% of the temperature range.
`
`[Brief description of Figures]
`
`[Figure 1] An embodiment of the present invention.
`
`[Figure 2] (a) is the semiconductor substrate temperature distribution when the temperature
`control system of the present invention is used, and (b) is the semiconductor substrate
`temperature distribution when the temperature control system of the prior art is used.
`
`[Figure 3] Prior art.
`
`[Figure 4] A material to be etched on a semiconductor substrate using a temperature control
`system of the prior art, where (a) is a cross part at the center of the semiconductor substrate, and
`(b) is a cross section at the circumferential part.
`
`[Explanation of reference Numerals]
`
`1, 2, 3 Controllers
`
`4, 5, 6 Signal cables
`
`7, 8, 9 Signal cables
`
`10, 11, 12
`
`Cooling medium reservoirs
`
`13, 14, 15
`
`Pumps
`
`16, 17, 18
`
`Valves
`
`19, 20, 21
`
`Valves
`
`22, 23, 24
`
`Cooling medium supply paths
`
`25, 26, 27
`
`Cooling medium supply paths
`
`Page 6 of15
`
`

`
`
`
`H5—24319A
`
`28, 29, 30
`
`Temperature monitors
`
`31
`
`32
`
`33
`
`34
`
`40
`
`Electrode
`
`Semiconductor substrate
`
`Upper part of electrode
`
`Vacuum process chamber
`
`Semiconductor substrate
`
`'41
`
`Si oxide film
`
`42
`
`43
`
`Photo-resist
`
`Reaction product
`
`[Figure 3]
`
`33
`
`34
`
`Upper part of electrode
`
`Vacuum process chamber
`
`
`
`[Figure 1]
`
`1, 2, 3 Controllers
`
`4, 5, 6 Signal cables
`
`7, 8, 9 Signal cables
`
`13, 14, 15
`
`Pumps
`
`19, 20, 21
`
`Valves
`
`10, 11, 12
`
`Cooling medium reservoirs
`
`16, 17, 18
`
`Valves
`
`22, 23, 24
`
`Cooling medium supply paths
`
`Page 7 of15l
`
`

`
`25, 26, 27
`
`Cooling medium supply paths
`
`28, 29, 30
`
`Temperature monitors
`
`32
`
`34
`
`Semiconductor substrate
`
`Vacuum process chamber
`
`(8)
`
`31
`
`33
`
`Electrode
`
`Upper part of electrode
`
`HS-24319A
`
`
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`Page 8 of 15
`
`

`
`(9)
`
`H5~24319A
`
`[Figure 2]
`
`(CL)
`
`
`
`
`(5)
`
`Page 9 of 15
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`

`
`(10)
`
`H5-24319A
`
`[Figure 4]
`
`40
`
`41
`
`42
`
`43
`
`Semiconductor substrate
`
`Si oxide film
`
`Photo-resist
`
`Reaction product
`
`mx"4-’
`
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`
`Page 10 of 15
`
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`’17f*+<1af1S11i‘5101i13
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`Date: luiy 13, 2016
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`To whom it may concern:
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`I, Shinilicho, a translator fluent in the Japanese and English languages, on behalf of Morning-side
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