UNITED STATES PATENT AND TRADEMARK OFFICE
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`
`
`
`Taiwan Semiconductor Manufacturing Company, Ltd.
`
`Petitioner
`
`v.
`
`Godo Kaisha IP Bridge 1
`
`
`
`
`
`Patent Owner
`
`
`
`Patent No. 6,197,696
`Filing Date: March 23, 1999
`Issue Date: March 6, 2001
`
`Title: METHOD FOR FORMING INTERCONNECTION STRUCTURE
`
`
`
`Inter Partes Review No. IPR2016-01379
`
`
`
`PETITION FOR INTER PARTES REVIEW
`UNDER 35 U.S.C. §§ 311-319 AND 37 C.F.R. § 42.100 ET SEQ.
`
`
`
`

`
`Table of Contents
`
`I.
`
`Preliminary Statement ............................................................................... 1
`
`II.
`
`Technological Background ........................................................................ 1
`
`A.
`
`B.
`
`Integrated Circuits and Interconnections ............................................ 1
`
`Semiconductor Etching and Photolithography ................................... 5
`
`III. The ’696 Patent .......................................................................................... 7
`
`A. Description of the Challenged Claims ................................................ 7
`
`B.
`
`C.
`
`Examination of the ’696 Patent .........................................................18
`
`The Challenged Claims Are Not Entitled to the Benefit of
`Foreign Priority .................................................................................18
`
`1.
`
`2.
`
`3.
`
`4.
`
`The first, second, and fourth embodiments of the ’371
`application do not disclose step h) of claim 10 ........................20
`
`The third, variant of the third, and fourth embodiments
`do not disclose step i) of claim 10 ...........................................21
`
`The third, variant of the third, and fourth embodiments
`do not disclose step j) of claim 10 ...........................................23
`
`No embodiments of the ’371 application disclose step l)
`of claim 10 ..............................................................................25
`
`IV. Statement of Precise Relief Requested for Each Claim Challenged ......27
`
`A.
`
`Claims for Which Review is Requested ............................................27
`
`Statutory Grounds of Challenge ........................................................27
`
`Level of Ordinary Skill .....................................................................27
`
`Claim Construction ...........................................................................27
`
`B.
`
`C.
`
`D.
`
`
`
`

`
`V. Claims 10 and 12 of the ’696 Patent Are Unpatentable Over the
`Prior Art ....................................................................................................28
`
`A. Disclosures of the Prior Art...............................................................28
`
`1.
`
`2.
`
`Grill (U.S. Patent No. 6,140,226) ............................................28
`
`Aoyama (U.S. Patent No. 5,592,024) ......................................33
`
`3. Wetzel (U.S. Patent No. 5,920,790) .........................................35
`
`B.
`
`The Grill-Wetzel Combination Renders Claim 10 Obvious ...............36
`
`1.
`
`2.
`
`A POSITA would have found it obvious to combine
`teachings of Grill and Wetzel ..................................................36
`
`The combination of Grill and Wetzel renders claim 10
`obvious ...................................................................................37
`
`C.
`
`The Combination of Grill, Aoyama, and Wetzel Renders Claims
`10 and 12 Obvious ............................................................................54
`
`1.
`
`2.
`
`3.
`
`A POSITA would have found it obvious to combine
`teachings of Grill, Aoyama, and Wetzel...................................54
`
`Claim 10 is obvious in view of the Grill-Aoyama-Wetzel
`combination ............................................................................59
`
`Claim 12 is obvious in view of the Grill-Aoyama-Wetzel
`combination ............................................................................75
`
`VI. Mandatory Notices Under 37 C.F.R. §42.8 ..............................................79
`
`A.
`
`Real Parties-In-Interest .....................................................................79
`
`B.
`
`C.
`
`Related Matters .................................................................................80
`
`Lead and Back-Up Counsel ..............................................................81
`
`D.
`
`Service Information ..........................................................................82
`
`VII. Certification Under 37 C.F.R. §42.24(d) ..................................................82
`
`VIII. Payment of Fees ........................................................................................82
`
`
`
`ii
`
`

`
`IX. Time for Filing Petition ............................................................................83
`IX. Time for Filing Petition ............................................................................83
`
`X. Grounds for Standing ...............................................................................83
`X.
`Grounds for Standing ...............................................................................83
`
`XI. Conclusion .................................................................................................83
`XI. Conclusion ............................................................................................... ..83
`
`
`
`
`
`iii
`iii
`
`

`
`Table of Authorities
`
`Cases
`
`Dynamic Drinkware, LLC v. Nat’l Graphics, Inc., 800 F.3d 1375 (Fed. Cir.
`2015) ...............................................................................................................28
`
`Fiers v. Revel, 984 F.2d 1164 (Fed. Cir. 1993) .....................................................18
`
`In re Ziegler, 992 F.2d 1197 (Fed. Cir. 1993) .......................................................20
`
`KSR Int’l Co. v. Teleflex Inc., 550 U.S. 398 (2007) ...............................................58
`
`Phillips v. AWH Corp., 415 F.3d 1303 (Fed. Cir. 2005) (en banc) ........................27
`
`Statutes
`
`35 U.S.C. §102(e) ........................................................................................... 28, 35
`
`35 U.S.C. §103 .....................................................................................................27
`
`35 U.S.C. §321 .....................................................................................................27
`
`Other Authorities
`
`Ariosa Diagnostics, Inc. v. Illumina, Inc., IPR2014-01093, Paper 69 (Jan. 7,
`2016) ...............................................................................................................28
`
`Core Survival, Inc. v. S&S Precision, LLC, PGR2015-00022, Paper 8 (Feb.
`19, 2016) ..........................................................................................................18
`
`Rules
`
`37 C.F.R. §42.100(b) ............................................................................................28
`
`37 C.F.R. §42.101(b) ............................................................................................83
`
`37 C.F.R. §42.103(a) ............................................................................................82
`
`37 C.F.R. §42.104(a) ............................................................................................83
`
`37 C.F.R. §42.108 .................................................................................................18
`
`37 C.F.R. §42.15(a) ..............................................................................................82
`
`
`
`iv
`
`

`
`37 C.F.R. §42.24 ...................................................................................................82
`37 C.F.R. §42.24 ................................................................................................. ..82
`
`37 C.F.R. §42.8 ............................................................................................... 79, 82
`37 C.F.R. §42.8 ............................................................................................. ..79, 82
`
`
`
`
`
`
`
`v
`
`

`
`LIST OF EXHIBITS
`
`Petition Exhibit 1001: U.S. Patent No. 6,197,696 to Aoi et al.
`
`Petition Exhibit 1002: Expert Declaration of Dr. Bruce W. Smith, Ph.D.
`
`Petition Exhibit 1003: U.S. Patent No. 3,617,824 to Shinoda et al.
`
`Petition Exhibit 1004: U.S. Patent No. 3,838,442 to Humphreys.
`
`Petition Exhibit 1005: U.S. Patent No. 6,140,226 to Grill et al.
`
`Petition Exhibit 1006: U.S. Patent No. 5,635,423 to Huang et al.
`
`Petition Exhibit 1007: U.S. Patent No. 5,741,626 to Jain et al.
`
`Petition Exhibit 1008: C. Akrout et al., “A 480-MHz Microprocessor in a
`0.12µm Leff CMOS Technology with Copper
`Interconnects,” IEEE J. of Solid-State Circuits, Vol. 33,
`no. 11 (November 1998).
`
`
`Petition Exhibit 1009:
`
`J.N. Burghartz et al., “Monolithic Spiral Inductors
`Fabricated Using a VLSI Cu-Damascene Interconnect
`Technology and Low-Loss Substrates,” International
`Electron Devices Meeting (December 1996).
`
`
`Petition Exhibit 1010: U.S. Patent No. 6,100,184 to Zhao et al.
`
`Petition Exhibit 1011: U.S. Patent No. 6,103,616 to Yu et al.
`
`Petition Exhibit 1012: File History of U.S. Patent No. 6,197,696 to Aoi et al.
`
`Petition Exhibit 1013:
`
`Japanese Patent Application No. 10-079371 to Aoi.
`
`Petition Exhibit 1014: Certified Translation of Japanese Patent Application No.
`10-079371 to Aoi.
`
`Petition Exhibit 1015:
`
`Japanese Patent Application No. 11-075519 to Aoi.
`
`Petition Exhibit 1016: Certified Translation of Japanese Patent Application No.
`11-075519 to Aoi.
`
`Petition Exhibit 1017: U.S. Provisional Patent Application No. 60/071,628.
`
`
`
`vi
`
`

`
`Petition Exhibit 1018: U.S. Patent No. 5,592,024 to Aoyama et al.
`
`Petition Exhibit 1019: U.S. Patent No. 5,920,790 to Wetzel et al.
`
`
`
`vii
`
`

`
`I.
`
`Preliminary Statement
`
`U.S. Patent No. 6,197,696 (Ex. 1001) is directed to methods for forming
`
`integrated circuit “interconnects,” which link components in a microchip. In
`
`particular, the ’696 patent is directed to common “dual damascene” processes for
`
`forming interconnects.
`
`Supported by the Expert Declaration of Bruce Smith, Ph.D., (Ex. 1002), this
`
`Petition establishes that challenged claims 10 and 12 are unpatentable. Rather than
`
`defining novel or nonobvious subject matter, the challenged claims recite well-
`
`known processes for making well-known structures. TSMC respectfully requests
`
`inter partes review under 35 U.S.C. §§311–319 and 37 C.F.R. §42.100 et seq., and
`
`cancellation of the challenged claims.
`
`II. Technological Background
`
`A.
`
`Integrated Circuits and Interconnections
`
`Integrated circuits contain millions of discrete semiconductor devices
`
`electrically connected by “interconnections,” or “interconnects,” to form circuits.
`
`U.S. Patent No. 3,617,824 to Shinoda et al. (Ex. 1003), which dates to 1965,
`
`provides an early example. (Ex. 1003, 4:30–73, Figs. 6, 7 (below with color
`
`highlights).)
`
`

`
`
`
`
`
`Interconnects typically have “via” portions extending between the planes of
`
`adjacent layers to provide electrical connections between those layers. (Ex. 1002,
`
`¶33.) Interconnects also typically have “trench” patterns, which act as wires to
`
`define circuits by linking the vias appropriately. These interconnect schemes were
`
`common years before the application for the ’696 patent was filed. (See, e.g., Ex.
`
`
`
`2
`
`

`
`1004, Abstract, 1:54–2:6, 8:19–54, Figs. 6, 6A (below with color highlights), 7,
`
`7A.)
`
`
`
`Multiple levels of interconnects are typical. (Ex. 1002, ¶34.) Examples of
`
`this type of wiring scheme, which was common years before the time the
`
`application for the ’696 patent was filed, appear below. (Ex. 1008, 1–4, Fig. 2; Ex.
`
`1009, 1–2, Fig. 2; Ex. 1002, ¶34.)
`
`In a dual damascene process, such the ones as described by the ’696 patent,
`
`
`
`
`
`the via and trench structures are formed during the same process. (See Ex. 1009, 1;
`
`Ex. 1002, ¶35.) The via and trench patterns are etched into insulating material and
`
`
`
`3
`
`

`
`then filled with metal and polished flat. (Ex. 1002, ¶35.) Like other interconnect
`
`structures, dual damascene processes result in vias that vertically link metallization
`
`levels and trenches that link the vias together horizontally to form circuits. (Ex.
`
`1005, 1:45–48, 3:33–36; Ex. 1006, Abstract, 2:61–3:2, 3:54–57; Ex. 1007, 2:15–
`
`20.) Examples appear below with annotations. (Ex. 1005, Fig. 1L; Ex. 1006, Figs.
`
`6(c), 9; Ex. 1007, Fig. 5.)
`
` Ex. 1005
`
` Ex. 1006
`
`
`
` Ex. 1007
`
` Ex. 1006
`
`
`
`
`
`4
`
`
`
`
`
`

`
`B.
`
`Semiconductor Etching and Photolithography
`
`Two processing technologies that can create patterns in a semiconductor
`
`wafer are photolithography and etching. In photolithography, a chemical called a
`
`photoresist uniformly coats the surface of the semiconductor wafer. (Ex. 1002,
`
`¶37.) Photoresist is sensitive to light and changes its molecular structure when
`
`illuminated under certain conditions. (Id.) A photomask, transparent in some
`
`regions and opaque in others, contains a pattern that can be transferred to the
`
`photoresist on the surface of the wafer. (Id., ¶38.) After the photomask is aligned,
`
`the photoresist is illuminated through the photomask. (Id.) The exposed
`
`photoresist is altered by the light, and any photoresist not part of the pattern can be
`
`removed with a chemical called a “developer.” (Id., ¶39.)
`
`The processed wafer retains the patterned photoresist layer, which can be
`
`used to pattern material underneath. (Id., ¶39.) Schematic representations of
`
`photolithography appear below. (Id., ¶40.)
`
`
`
`5
`
`
`
`

`
`A patterned photoresist layer can serve as a mask during an “etch” process.
`
`In etching, the surface of the processed wafer (semiconductor substrate and/or
`
`overlying layers) is exposed to corrosive chemicals to remove certain portions of
`
`the wafer. (Id., ¶42.) After etching, the photoresist may then be “stripped”
`
`(removed) from the wafer by another chemical treatment. (Id., ¶43.) In some
`
`cases, the etching process itself may even remove the photoresist. A representation
`
`of photolithography and etching appears below.
`
`(Id.)
`
`
`
`An etch that attacks all exposed materials is called a non-selective etch,
`
`whereas an etch that attacks certain material compositions more than others is
`
`called a selective etch. (Id., ¶44.) An etch that attacks a material in all directions
`
`is called isotropic, whereas an etch that attacks in a preferred direction (often
`
`perpendicular to the surface of the wafer) is called anisotropic. (Id., ¶45.) An etch
`
`
`
`6
`
`

`
`that uses a liquid etching agent is called a “wet” etch, whereas an etch that does not
`
`use a liquid etching agent (typically using ionized gas, called a “plasma”) is called
`
`a “dry” etch. (Id., ¶46.) Dual damascene processes typically use selective,
`
`anisotropic, dry etching. (Id., ¶47; see also, e.g., Ex. 1006, 2:61–63; Ex. 1010,
`
`2:44–48; Ex. 1011, 4:9–12.)
`
`III. The ’696 Patent
`
`A. Description of the Challenged Claims
`
`This Petition challenges the patentability of claims 10 and 12 of the ’696
`
`patent. Independent claim 10 recites “[a] method for forming an interconnection
`
`structure,” and claim 12 depends from claim 10. (Ex. 1001, 34:1–57.) As
`
`explained further below, claim 10 reads on the sixth embodiment, including the
`
`modified sixth embodiment,1 of the ’696 patent. (Ex. 1002, ¶¶48–127; see also Ex.
`
`1001, 27:63–29:60, Figs. 30(a)–35(c).) Claim 10 is described below with
`
`reference to the sixth embodiment. Dr. Smith’s declaration also describes the
`
`challenged claims and the embodiments of the ’696 patent. (See Ex. 1002, ¶¶48–
`
`133.)
`
`
`1 The modified sixth embodiment differs in that the width of the contact hole
`
`in the second resist pattern is larger than the width of the wiring grooves. (See Ex.
`
`1001, 30:51–56, 34(b).)
`
`
`
`7
`
`

`
`1.
`
`step a) of Claim 10
`
`Step a) of claim 10 recites “forming a first insulating film [602] over lower-
`
`level metal interconnects [601].”
`
`In the sixth embodiment the claimed first insulating film is “silicon nitride
`
`film 602[/652]” located over lower-level interconnects 601 [or 651]. (Ex. 1001,
`
`28:1–9, 30:1–11, Figs. 30(a), 33(a).) An example of step a) from the ’696 patent is
`
`shown with color highlights in the Figure below. (Ex. 1001, 28:1–36, Fig. 30(a);
`
`Ex. 1002, ¶¶50–55.)
`
`2.
`
`step b) of Claim 10
`
`
`
`Step b) of claim 10 recites “forming a second insulating film [603], having a
`
`different composition than that of the first insulating film, over the first insulating
`
`film [602].”
`
`In the sixth embodiment the claimed second insulating film is “first organic
`
`film 603[/653],” an “insulating film” with a composition that differs from that of
`
`the first insulating film (silicon nitride film 602 [or 652]). (Ex. 1001, 28:1–9,
`
`30:1–9, Figs. 30(a), 33(a); Ex. 1002, ¶¶59–60.) An example of step b) from the
`
`
`
`8
`
`

`
`’696 patent is shown with color highlights in the Figure below. (Ex. 1001, 28:1–
`
`36, Fig. 30(a); Ex. 1002, ¶¶56–61.)
`
`3.
`
`step c) of Claim 10
`
`
`
`Step c) of claim 10 recites “forming a third insulating film [604], having a
`
`different composition than that of the second insulating film, over the second
`
`insulating film [603].”
`
`In the sixth embodiment the claimed third insulating film is “silicon dioxide
`
`film 604[/654],” having a composition that differs from that of the second
`
`insulating film (first organic film 603 [or 653]). (Ex. 1001, 28: 6–11, 30:6–11,
`
`Figs. 30(a), 33(a); Ex. 1002, ¶¶65–66.) An example of step c) from the ’696 patent
`
`is shown with color highlights in the Figure below. (Ex. 1001, 28:1–36, Fig. 30(a);
`
`Ex. 1002, ¶¶62–67.)
`
`
`
`
`
`9
`
`

`
`4.
`
`step d) of Claim 10
`
`Step d) of claim 10 recites “forming a fourth insulating film [605], having a
`
`different composition than that of the third insulating film, over the third insulating
`
`film [604].”
`
`In the sixth embodiment the claimed fourth insulating film is “second
`
`organic film 605[/655],” which is an “insulating film” having a composition that
`
`differs from that of the third insulating film (silicon dioxide film 604 [or 654]).
`
`(Ex. 1001, 28: 9–14, 30:9–14, Figs. 30(a), 33(a); Ex. 1002, ¶¶71–72.) An example
`
`of step d) from the ’696 patent is shown with color highlights in the Figure below.
`
`(Ex. 1001, 28:1–36, Fig. 30(a); Ex. 1002, ¶¶68–73.)
`
`5.
`
`step e) of Claim 10
`
`
`
`Step e) of claim 10 recites “forming a thin film [606] over the fourth
`
`insulating film [605].”
`
`In the sixth embodiment, “a titanium nitride film 606[/656] (thin film) is
`
`deposited to be 50 nm thick.” (Ex. 1001, 28:14–16, 30:14–16, Figs. 30(a), 33(a);
`
`Ex. 1002, ¶¶77–78.) An example of step e) from the ’696 patent is shown with
`
`
`
`10
`
`

`
`color highlights in the Figure below. (Ex. 1001, 28:1–36, Fig. 30(a); Ex. 1002,
`
`¶¶74–79.)
`
`6.
`
`step f) of Claim 10
`
`
`
`Step f) of claim 10 recites “forming a first resist pattern [607] on the thin
`
`film [606], the first resist pattern having openings for forming wiring grooves.”
`
`In the sixth embodiment “a first resist pattern 607[/657], having openings for
`
`forming wiring grooves, is formed by lithography on the titanium nitride film
`
`606[/656].” (Ex. 1001, 28:37–39, 30:37–39, Figs. 30(b), 33(b); Ex. 1002, 83–84.)
`
`An example of step f) from the ’696 patent is shown with color highlights in the
`
`Figure below. (Ex. 1001, 28:37–43, Fig. 30(b); Ex. 1002, ¶¶80–85.)
`
`
`
`
`
`11
`
`

`
`7.
`
`step g) of Claim 10
`
`Step g) of claim 10 recites “etching the thin film [606] using the first resist
`
`pattern [607] as a mask, thereby forming a mask pattern [608] out of the thin film
`
`to have the openings for forming wiring grooves.”
`
`In the sixth embodiment “the titanium nitride film 606[/656] is dry-etched
`
`using the first resist pattern 607[/657] as a mask, thereby forming a mask pattern
`
`608[/658], having openings for forming wiring grooves, out of the titanium nitride
`
`film 606[/656].” (Ex. 1001, 28:39–43, 30:39–43, Figs. 30(c), 33(c); Ex. 1002,
`
`¶¶89–90.) An example of step g) from the ’696 patent is shown with color
`
`highlights in the Figure below. (Ex. 1001, 28:37–43, Fig. 30(c); Ex. 1002, ¶¶86–
`
`91.)
`
`8.
`
`step h) of Claim 10
`
`
`
`Step h) of claim 10 recites “removing the first resist pattern [607] and then
`
`forming a second resist pattern [609] on the fourth insulating film [605] and the
`
`mask pattern [608], the second resist pattern having openings for forming contact
`
`holes.”
`
`
`
`12
`
`

`
`In the sixth embodiment, “the first resist pattern 607[/657] is removed.”
`
`(Ex. 1001, 28:44–46, 30:44–46, Figs. 31(a), 34(a).) “Then, as shown in FIG.
`
`31(b)[/FIG. 34(b)], a second resist pattern 609[/659], having openings for forming
`
`contact holes, is formed by lithography on the mask pattern 608[/658].” (Id.,
`
`28:49–51, 30:49–57, Figs. 31(b), 34(b); Ex. 1002, ¶¶95–96.) An example of step
`
`h) from the ’696 patent is shown with color highlights in the Figure below. (Ex.
`
`1001, 28:44–51, Figs. 31(a), 31(b); Ex. 1002, ¶¶92–97.)
`
`9.
`
`step i) of Claim 10
`
`Step i) of claim 10 recites “dry-etching the fourth insulating film [605] using
`
`the second resist pattern [609] and the mask pattern [608] as a mask, thereby
`
`patterning the fourth insulating film [605] to have the openings for forming contact
`
`
`
`holes.”
`
`In the sixth embodiment, “the second organic film 605[/655] is dry-etched
`
`using the second resist pattern 609[/659] and the mask pattern 608[/658] as a mask,
`
`thereby forming a patterned second organic film 605A[/655A] having openings for
`
`forming contact holes.” (Ex. 1001, 28:51–55, 30:58–62, Figs. 31(c), 34(c); Ex.
`
`
`
`13
`
`

`
`1002, ¶¶101–02.) An example of step i) from the ’696 patent is shown with color
`
`highlights in the Figure below. (Ex. 1001, 28:51–55, Fig. 31(c); Ex. 1002, ¶¶98–
`
`103.)
`
`10.
`
`step j) of Claim 10
`
`
`
`Step j) of claim 10 recites “dry-etching the third insulating film [604] using
`
`the patterned fourth insulating film [605A] as a mask, thereby patterning the third
`
`insulating film [604A] to have the openings for forming contact holes.”
`
`In the sixth embodiment, “the silicon dioxide film 604[/654] is dry-etched
`
`using the patterned second organic film 605A[/655A] as a mask, thereby forming a
`
`patterned silicon dioxide film 604A[/654A] having openings for forming contact
`
`holes.” (Ex. 1001, 29:1–5, 31:7–11, Figs. 32(a), 35(a); Ex. 1002, ¶¶107–08.) An
`
`example of step j) from the ’696 patent is shown with color highlights in the Figure
`
`below. (Ex. 1001, 29:1–5, Fig. 32(a); Ex. 1002, ¶¶104–09.)
`
`
`
`
`
`14
`
`

`
`11.
`
`step k) of Claim 10
`
`Step k) of claim 10 recites “dry-etching the patterned fourth insulating film
`
`[605A] and the second insulating film [603] using the mask pattern [608] and the
`
`patterned third insulating film [604A] as respective masks, thereby forming wiring
`
`grooves [610] in the patterned fourth insulating film and patterning the second
`
`insulating film to have the openings for forming contact holes [611].”
`
`In the sixth embodiment, “the patterned second organic film 605A[/655A]
`
`and the first organic film 603[/653] are dry-etched using the mask pattern
`
`608[/658] and the patterned silicon dioxide film 604A[/654A] as respective masks,
`
`thereby forming a patterned second organic film 605B[/655B] having wiring
`
`grooves 610[/660] and a patterned first organic film 603A[/653A] having contact
`
`holes 611[/661].” (Ex. 1001, 29:6–12, 31:12–18, Figs. 32(b), 35(b); Ex. 1002,
`
`¶¶113–14.) An example of step k) from the ’696 patent is shown with color
`
`highlights in the Figure below. (Ex. 1001, 29:6–12, Fig. 32(b); Ex. 1002, ¶¶110–
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`15.)
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`
`
`
`
`
`
`15
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`

`
`12.
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`step l) of Claim 10
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`Step l) of claim 10 recites “dry-etching the patterned third insulating film
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`[604A] and the first insulating film [602] using the mask pattern [608] and the
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`patterned second insulating film [603A] as respective masks, thereby forming
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`wiring grooves and contact holes in the patterned third insulating film and the first
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`insulating film, respectively.”
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`In the sixth embodiment, “patterned silicon dioxide film 604A[/654A] and
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`the silicon nitride film 602[/652] are dry-etched using the mask pattern 608[/658]
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`and the patterned first organic film 603A[/653A] as respective masks, thereby
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`forming a patterned silicon dioxide film 604B[/654B] having wiring grooves (see
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`FIG. 32(c)[/FIG. 35(c)]) and a patterned silicon nitride film 602A[/652A] having
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`the contact holes (see FIG. 32(c)[/FIG. 35(c)]), and exposing the first metal
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`interconnects 601[/651] within the contact holes 611[/661].” (Ex. 1001, 29:13–20,
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`31:19–26, Figs. 32(c), 35(c); Ex. 1002, ¶¶119–20.) An example of step l) from the
`
`’696 patent is shown with color highlights in the Figure below. (Ex. 1001, 29:13–
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`20, Fig. 32(c); Ex. 1002, ¶¶116–21.)
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`
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`16
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`

`
`13.
`
`step m) of Claim 10
`
`Step m) of claim 10 recites “filling in the wiring grooves and the contact
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`holes with a metal film, thereby forming upper-level metal interconnects [612] and
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`contacts [613] connecting the lower- and upper-level metal interconnects
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`together.”
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`In the sixth embodiment, “a metal film is deposited over the entire surface of
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`the substrate to completely fill in the contact holes 611[/661] and the wiring
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`grooves 610[/660].” (Ex. 1001, 29:24–26, 31:30–32, Figs. 32(c), 35(c).) “As a
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`result, second metal interconnects 612[/662] and contacts 613[/663], connecting
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`the first and second metal interconnects 601[/651] and 612[/662] together, are
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`formed.” (Ex. 1001, 29:35–38, 31:41–44; Ex. 1002, ¶¶125–26.) An example of
`
`step m) from the ’696 patent is shown with color highlights in the Figure below.
`
`(Ex. 1001, 29:24–39, Fig. 32(c); Ex. 1002, ¶¶122–27.)
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`14. Dependent Claim 12
`
`
`
`Claim 12 depends from claim 10 and recites “wherein a size of the openings
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`of the second resist pattern for forming contact holes is larger than a designed size
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`of the contact holes in a direction vertical to a direction in which the upper-level
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`
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`17
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`

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`metal interconnects extend.” (See Ex. 1001, 25:42–46, 25:26–65, 26:12–60, Figs.
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`25(b), 27(b), 36, 37(a); Ex. 1002, ¶¶128–33.)
`
`B.
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`Examination of the ’696 Patent
`
`The application for the ’696 patent was filed on March 23, 1999, and claims
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`foreign priority to Japanese Patent Application No. 10-079371, filed March 26,
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`1998.
`
`The original application for the ’696 patent included 15 claims. (Ex. 1012,
`
`150–58.) The Examiner issued a first-action Notice of Allowability, accompanied
`
`by a statement of reasons for allowance, stating simply, “Prior art lacks the steps of
`
`forming an interconnection structure as recited in the claims.” (Id., 352–53.) The
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`’696 patent issued on March 6, 2001, with all 15 original claims.
`
`C. The Challenged Claims Are Not Entitled to the Benefit of Foreign
`Priority
`
`The ’696 patent claims priority to Japanese Patent Application No.
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`10-079371 (Ex. 1013; Ex. 1014) (“the ’371 application”), filed on March 26, 1998,
`
`but the challenged claims are not entitled to such priority. Patent Owner bears the
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`burden of proving entitlement to the benefit of foreign priority, Fiers v. Revel, 984
`
`F.2d 1164, 1169 (Fed. Cir. 1993); Core Survival, Inc. v. S&S Precision, LLC,
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`PGR2015-00022, Paper 8, at 7–10 (Feb. 19, 2016), but Patent Owner cannot meet
`
`its burden here. Moreover, “genuine issue[s] of material fact . . . will be viewed in
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`the light most favorable to the petitioner.” 37 C.F.R. §42.108.
`
`
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`18
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`

`
`The challenged claims are directed to the fifth, modified fifth, sixth, and
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`modified sixth embodiments of the ’696 patent (the “new embodiments”). (Ex.
`
`1002, ¶¶28–133.) The ’371 application, however, describes only the first through
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`fourth embodiments of the ’696 patent. (Compare Ex. 1014, ¶¶0028–0062, Figs.
`
`1(a)–8(c), with Ex. 1001, 10:22–14:56, Figs. 1(a)–8(c); compare Ex. 1014 ¶¶0063–
`
`0074, Figs. 9(a)–11(c), with Ex. 1001, 14:58–16:38, Figs. 9(a)–11(c); compare Ex.
`
`1014 ¶¶0075–0088, Figs. 12(a)–14(c), with Ex. 1001, 16:39–18:53, Figs. 12(a)–
`
`14(c); compare Ex. 1014 ¶¶0089–0102, Figs. 15(a)–17(c), with Ex. 1001, 18:59–
`
`20:49, Figs. 15(a)–17(c); compare Ex. 1014, ¶¶0103–0115, Figs. 18(a)–20(c), with
`
`Ex. 1001, 20:51–22:44, Figs. 18(a)–20(c).)
`
`The ’371 application does not disclose the new embodiments, to which the
`
`challenged claims are directed. (Compare generally Ex. 1014, with Ex. 1001,
`
`22:46–32:9, Figs. 21(a)–37(b); see also Ex. 1002, ¶¶135–36.) It also does not
`
`include Figures 21(a)–37(b) or claims 10–15, which relate to the new embodiments
`
`of the ’696 patent. (See Ex. 1014, [Claim 1]–[Claim 9], [Figure 1]–[Figure 20].)
`
`The descriptions, figures, and claims relevant to the subject matter challenged in
`
`this petition were added in Japanese Patent Application No. 11-075519 (“the ’519
`
`application”) (Ex. 1015; Ex. 1016), filed March 9, 1999, and the application for the
`
`’696 patent, filed March 23, 1999 (see Ex. 1016, [Claim 9]–[Claim 15], ¶¶0124–
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`0201; Ex. 1012, 125–49, 154–58).
`
`
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`19
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`

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`None of the embodiments in the ’371 application discloses all of the steps
`
`recited in claim 10.2 The challenged claims are not entitled to the benefit of
`
`foreign priority. See, e.g., In re Ziegler, 992 F.2d 1197, 1200 (Fed. Cir. 1993).
`
`1.
`
`The first, second, and fourth embodiments of the ’371
`application do not disclose step h) of claim 10
`
`Step h) of claim 10 recites, “removing the first resist pattern and then
`
`forming a second resist pattern on the fourth insulating film and the mask pattern,
`
`the second resist pattern having openings for forming contact holes.”
`
`The first, second, and fourth embodiments do not teach “removing the first
`
`resist pattern” before “forming a second resist pattern.” Each of those
`
`embodiments instead teaches forming the second resist pattern before removing the
`
`first resist pattern. (See Ex. 1002, ¶¶137–39.)
`
`The description of the first embodiment in the ’371 application states, “[T]he
`
`second resist pattern 109 is formed without removing the first resist pattern 107.”
`
`(Ex. 1014, ¶0043; see also ¶¶0050, 0056, Figs. 1(c), 5(a), 7(a).) The description of
`
`the second embodiment similarly states that “a second resist pattern 209, having
`
`openings for the formation of contact holes is formed by lithography on the second
`
`organic film 205 without removing the first resist pattern 207.” (Id., ¶0068; see
`
`
`2 The examples contained herein are illustrative, not limiting. Again, Patent
`
`Owner must establish priority.
`
`
`
`20
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`

`
`also Fig. 9(c).) The description of the fourth embodiment states that “a second
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`resist pattern 409 having openings for the formation of contact holes is formed by
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`lithography on the second low-dielectric-constant SOG film 405 without removing
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`the first resist pattern 407.” (Id., ¶0107; see also Fig. 18(c).)
`
`Figure 1(c) of the ’371 patent application, shown below with color
`
`highlights, demonstrates the formation of the second resist pattern (red) without
`
`removing the first resist pattern (green). (See also id., Figs. 5(a), 7(a), 9(c), 18(c).)
`
`2.
`
`The third, variant of the third, and fourth embodiments do
`not disclose step i) of claim 10
`
`Step i) of claim 10 recites “dry-etching the fourth insulating film using the
`
`
`
`second resist pattern and the mask pattern as a mask, thereby patterning the fourth
`
`insulating film to have the openings for forming contact holes.”
`
`The third, variant of the third, and fourth embodiments of the ’371
`
`application do not disclose “dry-etching the fourth insulating film using . . . the
`
`mask pattern as a mask.” The descriptions of these embodiments state only that
`
`
`
`21
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`

`
`the second resist pattern acts as a mask during this etch step. (See Ex. 1002,
`
`¶¶141–48.)
`
`To map the third embodiment to claim 10, the fourth insulating film must be
`
`layer 305, as it is the fourth of only five layers over the lower level interconnects
`
`(301). But the third embodiment of the ’371 application states, “[T]he second
`
`organic constituent-incorporated silicon dioxide film 305, the low-dielectric-
`
`constant SOG film 304 and the first organic constituent-incorporated silicon
`
`dioxide film 303 are sequentially dry-etched using the second resist pattern 309 as
`
`a mask.” (Id., ¶0079; see also, Fig. 13(b).) Pattern 308 is not disclosed as a mask
`
`for this step. (Ex. 1002, ¶¶140–43.)
`
`To map the variant of the third embodiment to claim 10, the fourth
`
`insulating film must be layer 355, as it is the four