`
`
`
`[19]
`United States Patent
`
`
`6,091,081
`
`[11] Patent Number:
`
`
`[45] Date of Patent: Jul. 18, 2000
`
`
`
`
`
`
`
`
`
`Matsubara et al.
`
`
`
`
`US006091081A
`
`
`
`
`
`[54]
`
`
`[75]
`
`
`INSULATING FILM COMPRISING
`
`
`
`AMORPHOUS CARBON FLUORIDE, A
`
`
`
`
`SEMICONDUCTOR DEVICE COMPRISING
`
`
`SUCH AN INSULATING FILM
`
`
`
`
`
`
`
`Inventors: Yoshihisa Matsubara; K0 N0guchi;
`
`
`
`
`Shinya Ito; Noriaki Oda; Akira
`
`
`
`
`
`Matsumoto; Takashi Ishigami;
`
`
`
`Masahiko Nakamae; Tadahiko
`
`
`
`Horiuchi; Kazuhiko Endo; T0ru
`
`
`
`
`Tatsumi; Yoshishige Matsum0t0, all of
`
`
`
`
`Tokyo, Japan
`
`
`
`
`
`
`
`[73] Assignee: NEC Corporation, Tokyo, Japan
`
`
`
`
`
`
`
`
`] Appl. No.: 08/982,585
`
`
`
`
`
`
`]
`
`
`Filed:
`
`
`
`Dec. 2, 1997
`
`
`
`
`
`r—‘r—‘r—iWNNONH
`
`]
`
`Dec. 2, 1996
`
`
`Jun. 5, 1997
`
`
`
`Foreign Application Priority Data
`
`
`
`
`Japan .................................. .. 8—321694
`[JP]
`
`
`
`Japan .................................. .. 9—148017
`[JP]
`
`
`
`
`
`
`
`
`
`
`
`
`
`Int. C1.7 ............................................... .. H01L 31/0312
`[51]
`
`
`
`[52] US. Cl.
`............................... .. 257/52; 257/55; 257/76;
`
`
`
`
`
`
`
`257/77; 438/482; 438/483
`
`
`
`[58] Field of Search ................................ .. 257/77, 76, 55,
`
`
`
`
`
`
`
`
`257/52; 438/482, 483
`
`
`
`
`[56]
`
`
`References Cited
`
`
`FOREIGN PATENT DOCUMENTS
`
`
`2/1996 European Pat. Off.
`.
`
`
`
`
`
`
`
`0696819
`
`
`
`0701283
`
`5—74962
`
`8—83842
`
`8—222557
`
`8—2365 17
`
`9—246242
`
`
`3/1996
`3/1993
`3/1996
`8/1996
`9/1996
`9/1997
`
`
`
`
`
`
`
`
`European Pat. Off.
`.
`
`
`
`Japan .
`
`Japan .
`
`Japan .
`
`Japan .
`
`Japan .
`
`
`Primary Examiner—William Mintel
`
`
`
`Attorney, Agent, or Firm—Sughrue, Mion, Zinn, Macpeak
`
`
`
`
`
`
`& Seas, PLLC
`
`
`
`
`
`
`[57]
`
`
`ABSTRACT
`
`
`
`
`
`
`A structure and manufacturing process of a low dielectric
`
`
`
`
`
`
`
`
`constant
`interlayer insulating film used between wiring
`
`
`
`
`
`
`layers and semiconductor devices using such film are dis-
`
`
`
`
`
`
`
`
`closed. The insulating film which can withstand in an actual
`
`
`
`
`
`
`
`
`
`
`process comprises an amorphous carbon fluoride film. A
`
`
`
`
`
`
`
`
`diamond like carbon film and a silicon excess layer are
`
`
`
`
`
`
`
`
`
`
`disposed on both sides of the amorphous carbon fluoride
`
`
`
`
`
`
`
`
`
`film to be inserted between the wiring layers, whereby
`
`
`
`
`
`
`
`
`
`adhesion to wiring and another insulating film contacting it
`
`
`
`
`
`
`
`
`
`is significantly enhanced. In addition, a silicon based insu-
`
`
`
`
`
`
`
`
`lating film is disposed and flattened on a multilayer film
`
`
`
`
`
`
`
`
`
`
`containing an amorphous carbon fluoride film buried with a
`
`
`
`
`
`
`
`
`
`wiring layer, and is used as a hard mask for anisotropically
`
`
`
`
`
`
`
`
`
`
`
`etching the diamond like carbon film and the amorphous
`
`
`
`
`
`
`
`
`
`carbon fluoride film with oxygen plasma to form a Via hole.
`
`
`
`
`
`
`
`
`
`
`
`
`13 Claims, 23 Drawing Sheets
`
`
`
`
`
`
`
`7
`
`
`
`8
`
`
`
`V
`
`S
`
`\\\NL\
`E§ ':‘ {2,5,},
`
`§\ .‘-.}.
`
`
`8
`'57
` kg’ikafi
`
`
`
`
`WW
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 1 0f 34
`
`TSMC Exhibit 1037
`
`TSMC v. IP Bridge
`IPR2016-01377
`
`Page 1 of 34
`
`TSMC Exhibit 1037
`TSMC v. IP Bridge
`IPR2016-01377
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 1 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`
`FIG.1
`
`7
`
`
`
`8
`
`
`
`
`
`
`,m
`
` 4E4}43 4
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`..
`
`‘
`
`«(II/s \\\V
`
`Page 2 0f 34
`
`Page 2 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 2 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`mm 3
`
`FlG.2(a) mm 2
`
`
`
`
`
`
`
`\\‘4' 3
`
`
`
`
`
`2
`
`2
`
`
`
`
`
`FIG.2(b)
`
`
`
`FIG.2(C)
`
`
`
`Page 3 0f 34
`
`Page 3 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 3 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`
`
`
`
`
`
`
`‘=//////A=
`‘
`
`.\\\\\\\\\‘
`
`
`
`
`
`
`
`
`
`$14443
`
`
`
`
`
`
`
`
`
`
`
`
`5W5
`
`\ \\\\
`
`‘\\\\: ~
`w
`I “““
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 4 0f 34
`
`Page 4 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 4 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`\\\\\\\\\\\\\\’ :3'.‘ ‘-' \\\\\\\\\\\\\\‘
`
`/‘
`
`.
`‘ ~\\\\\f:
`\’.--u-- ‘
`
`,_ :///////1:
`
`\\\\\\\\\:/: ' .
`
`Sea/((43
`
`F|G_4(g)
`
`
`
`FIG .40)
`
`
`
`FlG.4(i)
`
`
`
`Page 5 0f 34
`
`
`
`.
`
`:7///////\/,‘:
`
`.
`
`,
`
`.
`
`fl ‘‘‘‘ -it~‘“‘“\“\
`
`45::
`
` WIIIII/III/IIIIA
`
`Page 5 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 5 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`
`
`
`
`r“
`A
`:
`‘
`
`i
`~
`
`\
`
`;
`
`~“
`:
`:
`1
`2h““““w‘
`«
`~
`.////A\,
`s\\\\\\\\
`
`WWII/II
`
`:55 ~>‘
`1:1:
`t A
`‘
`~
`\‘
`
`'
`5(1)
`
`
`
`-
`
`FIG.5(k)
`
`
`QT“ 3:,
`
`
`
`
`
`
`FIG.5(I)
`
`
`
`
`
`
`
`VII/III/l/I/II/IIIA
`
`
`
`
`
`
`Page 6 0f 34
`
`Page 6 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 6 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 7 0f 34
`
`Page 7 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 7 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FIG.7
`
`
`
`
`
`451
`
`451
`
`
`
`
`
`figfifllVEESQSfi
`
`45‘
`:
`
`
`
`
`
`
`“ zzgmg
`AE§§53 Q
`
`
`’Ill/I’I/I/I/I/I/IA 2
`
`_ 1
`
`
`
`Page 8 0f 34
`
`Page 8 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 8 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`m 3
`
`FlG.8(a) VIII/III/I/I/I/IIA 2
`
`
`
`
`
`
`
`
`
`
`
`L\\\\)\\\\\\\\\\“
`
`
`FIG-8(b) VII'II/I/Il/I/I/IA 2
`
`
`
`
`_
`
`\\
`
`FlG.8(c)
`
`
`
`Page 9 0f 34
`
`
`
`
`
`
`
`
`
`Page 9 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 9 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FIGI-9(d)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`3
`
`43
`
`
`
`
`g iéi g «(4445m g
`
`
`
`
`451
`
`
`
`:7/////////,:
`EV////////4=
`§
`‘
`\
`V
`‘
`‘ ‘ ‘n I
`’ ‘\\\\\ I \ ‘ ‘ ‘ \ ‘ ~ ’ \\\\\\\\\\\ I \ ‘ \ ‘
`I
`{IIA .s. s 344445N
`
`FIG9(9) VII/I/I/III/lI/II/A
`
`
`
`\\
`
`:\\\\\
`
`‘ \\\\\\\\\\\ ‘
`\\\\‘ \\\\ ‘
`‘
`\’\
`§’\ \ \ \ \ \\’~
`./5\\\
`E s 1" a ~'/////At \\\V ~’//A
`.\\\\\\\\\‘ L
`
`FIG.9(f)
`
`
`
`Page 10 0f 34
`
`Page 10 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`Sheet 10 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`II”E\\\‘\:’\\\\\:yE\\\\\\\\\‘\\:
`
`
`\\\\‘\‘ g
`:\\\\\\\\/{‘
`:\\\é
`
`
`
`
`
`VIII/Illllllllllfl
`
`
`
`
`
`
`
`
`
`
`:y/////////,:
`‘ \\\\\\\\\\‘ ‘
`m' :‘“V~““:m“.~
`.
`I ‘
`I’ \ \ \
`FIG.10(h) W/‘N §SZ(({/\é\=\\\V.////,
`
`
`
`V
`
`
`
`VIII/I/I/IIIIIIIIA
`
`YAESF5=si(/<((</<S\\\VL(/Ké
`
`\
`
`\\\
`
`
`
`
`
`Page 11 0f 34
`
`Page 11 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 11 0123
`
`
`
`
`
`6,091,081
`
`
`
`
`
`
`
`~ . ~ ‘\
`
`
`
`
` ~ \ ‘\\\\\I‘ ~ \\\\\\\\\\\/~
`
`
`.
`u
`‘
`
`‘ Vii/77735m.
`
`
`
`
`.\\\\\\\\\\
`
`'I/I/I/I/I/I/I/Ifl
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`_~
`‘1
`.‘\\\\\
`Will/WA
`
`VII/II/I/I/I/I/A
`
`5*
`
`:‘S ’:
`
`
`
`
`
`
`
`FIG.1 1 (k)
`
`FIG.11(|)
`
`
`
`Page 12 0f 34
`
`Page 12 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 12 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FIG.12
`
`
`
`
`
`my. ‘a
`T ‘
`.
`(/4:
`«(445
`
`mm
`
`
`
`
`
`
`
`451
`
`
`
`
`
`
`
`
`
`
`
`
`Page 13 0f 34
`
`Page 13 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 13 0123
`
`
`
`
`
`6,091,081
`
`
`
`FIG.13
`
`
`
`
`
`
`
`VIA-HOLE DIAMETER
`
`
`OAU‘m]
`
`0.16
`
`
`
`0.14
`
`
`
`0.12
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`0.10
`
`0.08
`
`
`
`
`
`
`
`0.06
`
`DU
`
`J I 8L
`
`u
`UJ
`
`I)
`
`Q(
`
`
`0.04
`
`
`200
`
`
`
`
`
`
`
`400
`
`600
`
`
`
`800
`
`
`
`1000
`
`
`
`
`
`
`
`
`BIAS POWER [W]
`
`Page 14 0f 34
`
`
`“E
`
`
`
`
`3 1
`
`—
`
`2 D o 2 <
`
`
`
`
`
`Page 14 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 14 0f 23
`
`
`
`
`
`
`FIG. 1 4
`
`6,091,081
`
`
`
`
`
`
`
`
`
`
`
`
`
`FL
`
`3.
`O
`
`
`
`PARALLEL PLATE APPROX. E0
`
`
`
`
`
`
`
`
`Si SUBSTRATE
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`W / H
`
`
`
`FIG. 1 5
`
`
`
`
`
`
`
`
`
`PARALLEL PLATE APPROX.
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`E I E O
`
`
`
`
`
`
`
`
`
`
`
`
`
`0.1
`
`
`
`
`
`
`
`
`
`
`
`1
`
`
`
`
`10
`
`W/H
`
`
`
`
`100
`
`
`
`Page 15 0f 34
`
`Page 15 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 15 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FIG.16
`
`
`
`
`167
`
`
`1661
`
`
`
`‘I
`
` 164
`
`L...—
`
`
`
`1652
`
`
`
`
`
`
`
`
`
`
`
`
`Page 16 0f 34
`
`Page 16 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 16 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FIG.17
`
`
`
`
`
`I I I l I l I l I t l l I I l I ’IIIIIIIIIIIIIIIII
`
`wnnnnnnllnnn
`
`
`
`
`1O
`
`FIG.18
`
`
`
`
`
`
`
`Page 17 0f 34
`
`Page 17 of 34
`
`
`
`16
`
`
`
`\-
`
`
`
`
`
`
`.............--
`
`
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 17 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FIG.19
`
`
`
`
`
`
`
`
`
`Page 18 0f 34
`
`Page 18 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18, 2000
`
`
`
`
`
`Sheet 18 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`Z4<4<<<<4<4<£<4<<4<4<4<4<4<£€4<
`
`y...--.....-....
`
`
`45.12
`
`
`43
`
`
`
`
`
`44
`
`42
`
`
`
`
`
`FlG.20(a)
`
`
`
`FlG.20(b)
`
`
`
`FIG.20(C)
`
`
`
`FIG.20(d)
`
`
`
`Page 19 0f 34
`
`////////‘///////////////////////A
`“\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\V
`
`9----------..-'.1
`
`
`
`
`
`
`EVE m
`
`
`
`
`W--------—---:
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`’///////////A
`7/] VA 7/)
`----------_-
`
` mA
`
`
`&\\\\\\\\\\\\\\\\\\\\\\\\\\\\V
`'------------.-------1
`F..............‘
`
`
`
`
`
`
`
`
`
`’l/
`7/1
`////////////A
`7/]
`--.-.----—---_‘
`
`43
`
`
`451 """"""""
`
`
`
`
`
`
`42
`
`
`
`
`Page 19 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 19 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FIG.21(e)
`
`
`
`
`451
`
`
`
`43451
`
`
`
`
`M\\\\\\\\\\\\\\\‘
`A‘“
`3‘“
`3““
`--.-.-------‘
`
`W---—----.l
`
`y--------------
`
`
`
`
`
`
`
`FIG.21 (f)
`
`
`
`
`451
`>\\\\\\\\\\\\\\\\\\
`
`
`
`
`f; =;;;.=---;>§3\>\;\§>\§
`42
`
`
`
`
`
`
`
`
`16
`
`
`
`.\\\\‘ V L\\\‘.4
`V
`
`
`
`
`
`
`
`
`
`
`451
`
`
`--------------- IAI“Nh
`
`43
`
`
`451
`
`
`
`----
`
`
`
`FIG.21(g)
`
`Page 20 0f 34
`
`Page 20 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`Sheet 20 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FIG.22
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 21 0f 34
`
`Page 21 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 21 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FlG.23(a)
`
`
`
`
`
`
`
`451
`
`
`
`7///////////////////////////////
`i\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\.\\\\\\\\\\\\\\‘
`
`
`
`-----......-.
`
`
`
`
`
`FIG 23(b)
`
`'I/A
`
`
`
`43'
`
`"///////.‘///////////////////////A
`n\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\V
`
`
`
`
`
`
`
`
`
`
`
`
`L\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\V FIG.23(C)
`
`
`
`
`
`
`
`
`
`
`
`
`
`m’
`
`////////////.
`
`A
`
`
`
`
`451
`
`
`
`
`
`////////////l
`’// 7/;
`7/1
`-\\\\\\\\\\\‘\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\V
`
`k\\\\\\\\\\\\\\‘\\\\\\\‘\\\\V
`
`
`
`
`
`
`
`
`
`FIG.23(d)
`
`
`
`Page 22 0f 34
`
`Page 22 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 22 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`
`451
`4:
`
`
`41 —
`
`33.:2..¥‘._.__.\3333‘3332
`
`
`
`
`
`
`
`FIG.24(e)
`
`
`
`FIG.24(f)
`
`
`
`f;
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`16
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 23 0f 34
`
`Page 23 of 34
`
`
`
`
`US. Patent
`
`
`
`Jul. 18,2000
`
`
`
`
`
`Sheet 23 0f 23
`
`
`
`
`
`6,091,081
`
`
`
`FIG.25
`
`
`
`
`
`
`SILICON NITRIDE
`
`
`
`
`
`AMORPHOUS CARBON FLUORIDE
`
`
`
`
`SILICON OXIDE
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Cu(AES)INTENSITY
`
`
`
`
`
`
`
`
`
`(a.u.)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 24 0f 34
`
`Page 24 of 34
`
`
`
`6,091,081
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1
`INSULATING FILM COMPRISING
`
`
`
`AMORPHOUS CARBON FLUORIDE, A
`
`
`
`
`SEMICONDUCTOR DEVICE COMPRISING
`
`
`SUCH AN INSULATING FILM
`
`
`
`
`BACKGROUND OF THE INVENTION
`
`
`
`1. Field of the Invention
`
`
`
`
`
`The present invention relates to a semiconductor device
`
`
`
`
`
`
`
`
`having a plurality of laminated wiring layers, or multilayer
`
`
`
`
`
`
`
`
`
`wiring layers separated by insulating layers, and such an
`
`
`
`
`
`
`
`
`
`insulating film, as well as a manufacturing process for such
`
`
`
`
`
`
`
`
`
`
`a semiconductor device.
`
`
`
`2. Description of the Related Art
`
`
`
`
`
`
`As integration becomes more and more dense for a
`
`
`
`
`
`
`
`
`semiconductor large-scale integrated circuit (LSI),
`indi-
`
`
`
`
`
`vidual devices with dimensional accuracy of 14 pm or less
`
`
`
`
`
`
`
`
`
`
`are now integrated near the surface of a Si substrate. An LSI
`
`
`
`
`
`
`
`
`
`
`
`exhibits its function only after its individual devices are
`
`
`
`
`
`
`
`
`
`connected by wiring. However, if wiring is detoured to avoid
`
`
`
`
`
`
`
`
`
`
`intersections in interconnections between the individual
`
`
`
`
`
`
`devices, interconnecting delay may be caused because area
`
`
`
`
`
`
`
`
`occupied by wiring or wiring length is increased. A tech-
`
`
`
`
`
`
`
`
`
`nique has been commonly used for providing wiring on
`
`
`
`
`
`
`
`
`multiple layers by inserting insulating layers between wiring
`
`
`
`
`
`
`
`to prevent intersections and/or overlapping of wiring.
`
`
`
`
`
`
`
`This concept of multilayer wiring is shown in FIG. 16. An
`
`
`
`
`
`
`
`
`
`
`
`insulating film 1631 is formed in a silicon substrate 161, and
`
`
`
`
`
`
`
`
`
`
`
`is formed with a contact hole 164 therein. Acontact plug 164
`
`
`
`
`
`
`
`
`
`
`
`is buried in the contact hole 164 to connect a device forming
`
`
`
`
`
`
`
`
`
`
`
`region 162 to a first wiring layer 1651. In addition, the first
`
`
`
`
`
`
`
`
`
`
`
`
`wiring layer 1651 is connected to a second wiring layer 1652
`
`
`
`
`
`
`
`
`
`
`
`through a via plug 1661 filled in a via hole 1661 opened in
`
`
`
`
`
`
`
`
`
`
`
`
`
`the insulating film 1632. The second wiring layer 1652 is
`
`
`
`
`
`
`
`
`
`
`connected to a third wiring layer 1653 through a via plug
`
`
`
`
`
`
`
`
`
`
`
`1662 filled in a via hole 1662 opened in the insulating film
`
`
`
`
`
`
`
`
`
`
`
`
`1633. Further multilayer wiring can be attained by sequen-
`
`
`
`
`
`
`
`
`tially repeating the process described above. The process is
`
`
`
`
`
`
`
`
`completed by covering the last wiring layer with a sealing
`
`
`
`
`
`
`
`
`
`film 167.
`
`
`This technique for multilayer wiring with thin insulating
`
`
`
`
`
`
`
`layers therebetween has a large stray capacity causing inter-
`
`
`
`
`
`
`
`
`connecting delay. When a signal containing high frequency
`
`
`
`
`
`
`
`
`components is transmitted through two vertically adjacent
`
`
`
`
`
`
`
`wiring layers having an inter-layer insulating film
`
`
`
`
`
`
`
`therebetween, crosstalk is generated, thereby causing erro-
`
`
`
`
`
`
`neous operation. To prevent
`interconnecting delay or
`
`
`
`
`
`
`
`crosstalk, it is sufficient to increase the distance between the
`
`
`
`
`
`
`
`
`
`
`upper and lower wiring, or to thicken the inter-layer insu-
`
`
`
`
`
`
`
`
`
`lating film. However, thickening the inter-layer insulating
`
`
`
`
`
`
`
`film makes it necessary to form a deep contact hole or via
`
`
`
`
`
`
`
`
`
`
`
`
`hole. Formation of a deep contact hole or via hole makes it
`
`
`
`
`
`
`
`
`
`
`
`further difficult to perform the dry etching technology for
`
`
`
`
`
`
`
`
`
`forming these holes. Thus, it is desirable to have the thinnest
`
`
`
`
`
`
`
`
`
`
`
`inter-layer insulating film as possible. The semiconductor
`
`
`
`
`
`
`
`integrated circuit
`technology for 256 megabit DRAM
`
`
`
`
`
`
`
`(Dynamic Random Access Memory) or thereafter requires a
`
`
`
`
`
`
`
`smaller contact hole diameter of 14 pm or less. However, if
`
`
`
`
`
`
`
`
`
`
`
`it is desired to hold a ratio of the depth of a contact hole to
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`its diameter, or an aspect ratio, up to five from the viewpoint
`
`
`
`
`
`
`
`
`
`
`
`
`of the dry etching technology, the thickness of the inter-layer
`
`
`
`
`
`
`
`
`
`
`insulating film is necessarily required to be 1 pm or less.
`
`
`
`
`
`
`
`
`
`
`
`While the problem on the stray capacity between the upper
`
`
`
`
`
`
`
`
`
`
`and lower wiring layers is addressed in the above, an
`
`
`
`
`
`
`
`
`
`
`increase of stray capacity is also serious between wiring
`
`
`
`
`
`
`
`
`
`formed on a same plane. It is because, as the semiconductor
`
`
`
`
`
`
`
`
`
`
`integrated circuit is miniaturized, thickness of wiring and
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 25 0f 34
`
`
`
`
`2
`
`distance between wiring are also miniaturized, necessarily
`
`
`
`
`
`
`
`leading to the same problem as in the wiring thickness of 14
`
`
`
`
`
`
`
`
`
`
`
`
`pm. Since the wiring spacing cannot be widened in view of
`
`
`
`
`
`
`
`
`
`
`
`the requirement for a high degree of integration, the problem
`
`
`
`
`
`
`
`
`
`on interconnecting delay or crosstalk is more serious
`
`
`
`
`
`
`
`
`between wiring disposed on the same layer than between the
`
`
`
`
`
`
`
`
`
`
`upper and lower wiring for which the inter-layer insulating
`
`
`
`
`
`
`
`
`
`film may potentially be thickened.
`
`
`
`
`
`To accurately determine interconnecting delay and
`
`
`
`
`
`crosstalk accompanying an increase of inter-wiring capacity
`
`
`
`
`
`
`determined by the thickness of the upper and lower inter-
`
`
`
`
`
`
`
`
`
`layer insulating film or the interlayer insulating film in the
`
`
`
`
`
`
`
`
`
`
`same plane,
`is necessary to handle it as a distributed
`it
`
`
`
`
`
`
`
`
`
`
`
`constant circuit. FIG. 14 shows the capacity per unit wiring
`
`
`
`
`
`
`
`
`
`
`length between a wiring layer insulated by a silicon oxide
`
`
`
`
`
`
`
`
`
`
`film with a thickness H (dielectric constant: 3.9) and wiring
`
`
`
`
`
`
`
`
`
`
`on a silicon substrate, which is described by L. M. Dang, et
`
`
`
`
`
`
`
`
`
`
`
`al. in “IEEE Electron Device Letters,” Vol. EDL-2, 1981, p.
`
`
`
`
`
`
`
`
`
`
`196. It shows that, as wiring width W decreases, capacity C
`
`
`
`
`
`
`
`
`
`
`
`significantly increases by a so-called fringe effect when
`
`
`
`
`
`
`
`
`compared with the so-called plane parallel plate approxi-
`
`
`
`
`
`
`
`
`mated capacity. It is also known that the higher wiring height
`
`
`
`
`
`
`
`
`
`
`T is, the larger capacity C is. Although the insulating film
`
`
`
`
`
`
`
`
`
`
`
`between the silicon substrate and the lowermost wiring as
`
`
`
`
`
`
`
`
`
`shown in FIG. 14 is not usually called an inter-layer insu-
`
`
`
`
`
`
`
`
`
`
`lating film, it is common in the problems of interconnecting
`
`
`
`
`
`
`
`
`
`
`delay and crosstalk. Thus,
`the inter-layer insulating film
`
`
`
`
`
`
`
`
`referred to in this specification includes an insulating film
`
`
`
`
`
`
`
`
`
`contacting the silicon substrate and performing electric
`
`
`
`
`
`
`
`insulation with the wiring as well. In addition, FIG. 15
`
`
`
`
`
`
`
`
`
`
`described in the above-referenced paper shows that, as
`
`
`
`
`
`
`
`
`wiring spacing is miniaturized, the total capacity Cf with the
`
`
`
`
`
`
`
`
`
`silicon substrate per unit length increases as further minia-
`
`
`
`
`
`
`
`
`turization is attained and when W/H is more than 1. This
`
`
`
`
`
`
`
`
`
`
`
`results because, although the capacity C11 between the
`
`
`
`
`
`
`
`
`wiring and the silicon substrate decreases, the capacity C12
`
`
`
`
`
`
`
`
`
`between adjacent wiring separated by wiring spacing S
`
`
`
`
`
`
`
`
`contrarily increases. That is, although operating speed can
`
`
`
`
`
`
`
`
`be increased for individual elements of a semiconductor
`
`
`
`
`
`
`
`
`integrated circuit through miniaturization, wiring resistance
`
`
`
`
`
`
`and stray capacity increases in the wiring interconnecting
`
`
`
`
`
`
`
`
`these elements by miniaturization. Consequently, the oper-
`
`
`
`
`
`
`ating speed for the entire LSI is not improved at all. Both of
`
`
`
`
`
`
`
`
`
`
`
`
`
`FIGS. 14 and 15 show results of analysis on the stray
`
`
`
`
`
`
`
`
`
`
`
`capacity between the silicon substrate and the wiring dis-
`
`
`
`
`
`
`
`
`posed through an insulating film, however,
`they do not
`
`
`
`
`
`
`
`
`address the stray capacity between the wiring layers, even
`
`
`
`
`
`
`
`
`though the situation is the same for the stray capacity
`
`
`
`
`
`
`
`
`
`between the wiring layers.
`
`
`
`
`Thus, it is an urgent necessity, in light of the foregoing
`
`
`
`
`
`
`
`
`
`
`
`discussion, to develop an inter-layer insulating film with a
`
`
`
`
`
`
`
`
`
`low dielectric constant er in place of Si3N4 (er: 7 or less) and
`
`
`
`
`
`
`
`
`
`
`
`
`
`silicon oxide (er: 3.9 or less) which are insulating films
`
`
`
`
`
`
`
`
`
`
`commonly used in the LSI
`technology. An amorphous
`
`
`
`
`
`
`
`
`carbon fluoride film with a dielectric constant er<3 is dis-
`
`
`
`
`
`
`
`
`
`closed in Japanese Patent Application Laid-Open Nos.
`
`
`
`
`
`
`
`08-83842, 08-222557, 08-236517 and the like is expected as
`
`
`
`
`
`
`
`
`
`a suitable material with a low dielectric constant er.
`
`
`
`
`
`
`
`
`
`BRIEF SUMMARY OF THE INVENTION
`
`
`
`
`
`As described above, since the amorphous carbon fluoride
`
`
`
`
`
`
`
`
`film has a low dielectric constant er, it is expected to be
`
`
`
`
`
`
`
`
`
`
`
`
`suitable as an interlayer insulating film in multilayer wiring.
`
`
`
`
`
`
`
`
`
`However,
`there are still problems in the technology of
`
`
`
`
`
`
`
`
`
`forming a contact hole contacting a semiconductor diffusion
`
`
`
`
`
`
`
`layer or a via hole for connecting wiring layers, which
`
`
`
`
`
`
`
`
`
`
`prevent it from being put in practical use. The inventors tried
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`10
`
`
`
`15
`
`
`
`20
`
`
`
`25
`
`
`30
`
`
`
`35
`
`
`
`40
`
`
`
`45
`
`
`50
`
`
`
`55
`
`
`
`60
`
`
`
`65
`
`
`Page 25 of 34
`
`
`
`6,091,081
`
`
`
`
`
`
`
`
`
`
`
`
`
`3
`to open a hole in an amorphous carbon fluoride by referring
`
`
`
`
`
`
`
`
`
`
`to the description in Japanese Patent Application Laid-Open
`
`
`
`
`
`
`
`No. 5-74962 which is directed to an inter-layer insulating
`
`
`
`
`
`
`
`
`film which is believed to be a film similar to the amorphous
`
`
`
`
`
`
`
`
`
`
`
`carbon fluoride disclosed in Japanese Patent Application
`
`
`
`
`
`
`Laid-Open Nos. 08-83842, 08-222557, 08-236517. Japanese
`
`
`
`Patent Application Laid-Open No. 5-74962 shows that con-
`
`
`
`
`
`
`
`ventional photolithography technology can be used, thus the
`
`
`
`
`
`
`
`
`process is to use conventional resist which is a mixture of
`
`
`
`
`
`
`
`
`
`
`
`phenol resin and photosensitive agent or a resin such as
`
`
`
`
`
`
`
`
`
`
`cyclized rubber and photosensitive resin, to apply it on an
`
`
`
`
`
`
`
`
`
`
`amorphous carbon fluoride film in a thickness of 1—1.5 um,
`
`
`
`
`
`
`
`
`
`
`and to open a hole with a diameter of 0.2 pm by assuming
`
`
`
`
`
`
`
`
`
`
`
`
`
`a highly integrated LSI of 64 megabit or higher DRAM. The
`
`
`
`
`
`
`
`
`
`
`
`film disclosed in Japanese Patent Application Laid-Open
`
`
`
`
`
`
`
`No. 5-74962 has a problem because it contains a large
`
`
`
`
`
`
`
`
`
`
`amount of hydrogen, and is poor in thermal resistance which
`
`
`
`
`
`
`
`
`
`
`is a requirement for the interlayer film.
`
`
`
`
`
`
`
`It is desired to realize the structure as shown in FIG. 16
`
`
`
`
`
`
`
`
`
`
`
`
`utilizing an amorphous carbon fluoride as an inter-layer
`
`
`
`
`
`
`
`
`insulating film. A technique is described for opening a
`
`
`
`
`
`
`
`
`
`contact hole 164, or a via hole 1661 or 1662 in the amor-
`
`
`
`
`
`
`
`
`
`
`
`
`phous carbon fluoride inter-layer insulating films. First, the
`
`
`
`
`
`
`
`conventional resist described above is applied on the amor-
`
`
`
`
`
`
`
`
`phous carbon fluoride, followed by exposure and develop-
`
`
`
`
`
`
`
`ment to form a selection mask for etching. Subsequently, a
`
`
`
`
`
`
`
`
`
`
`hole is opened in the amorphous carbon fluoride by an ion
`
`
`
`
`
`
`
`
`
`
`
`milling process with this resist film as a mask. A hole
`
`
`
`
`
`
`
`
`
`
`
`opening by the ion milling is adopted because the amor-
`
`
`
`
`
`
`
`
`
`phous carbon fluoride film is strong against ordinary acid or
`
`
`
`
`
`
`
`
`
`
`alkali, and cannot be strongly etched. However, since the
`
`
`
`
`
`
`
`
`
`hole is opened by ion milling, which is a substantially pure
`
`
`
`
`
`
`
`
`
`
`
`physical process, the resist as the mask itself, is ground in
`
`
`
`
`
`
`
`
`
`
`
`the course of hole opening in the amorphous carbon fluoride.
`
`
`
`
`
`
`
`
`
`
`Thus,
`the hole can be hardly opened in the amorphous
`
`
`
`
`
`
`
`
`
`
`carbon fluoride with a film thickness less than 0.4 pm by
`
`
`
`
`
`
`
`
`
`
`
`forming the resist in a thickness of 1 pm or more. However,
`
`
`
`
`
`
`
`
`
`
`
`it is very difficult to open a hole in a film with a thickness
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`of 0.4 pm or more by the ion milling process.
`
`
`
`
`
`
`
`
`
`
`After opening the hole with the ion milling process, the
`
`
`
`
`
`
`
`
`
`
`resist is removed. It is found that film reduction is caused in
`
`
`
`
`
`
`
`
`
`
`
`
`the amorphous carbon fluoride by wet treatment using resist
`
`
`
`
`
`
`
`
`
`remover heated to about 100° C. It was further tried to
`
`
`
`
`
`
`
`
`
`
`
`remove the resist with an ashing process in oxygen plasma.
`
`
`
`
`
`
`
`
`
`
`However, it is found that even this process rapidly removes
`
`
`
`
`
`
`
`
`
`
`the amorphous carbon fluoride together with the resist. That
`
`
`
`
`
`
`
`
`
`it is very difficult to selectively work the amorphous
`is,
`
`
`
`
`
`
`
`
`
`
`carbon fluoride film with the conventional photolithography
`
`
`
`
`
`
`
`technology.
`
`Japanese Patent Application Laid-Open No. 09-246242
`
`
`
`
`
`
`discloses a technology to break such a situation, and shows
`
`
`
`
`
`
`
`
`
`
`that it is sufficient to use a silicone type resist as a mask for
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`selective etching of the inter-layer insulating film containing
`
`
`
`
`
`
`
`
`the amorphous carbon fluoride film. This is because the
`
`
`
`
`
`
`
`
`
`silicone type resist
`is not etched by oxygen plasma. In
`
`
`
`
`
`
`
`
`
`
`addition, an arrangement is adopted, in which a silicon oxide
`
`
`
`
`
`
`
`
`
`film, silicon nitride film, or silicon oxi-nitride film, which is
`
`
`
`
`
`
`
`
`
`
`a mixed film of both, is disposed on at least one principle
`
`
`
`
`
`
`
`
`
`
`
`
`plane of the amorphous carbon fluoride film. It is shown to
`
`
`
`
`
`
`
`
`
`
`
`be effective in improving adhesion near the inter-layer
`
`
`
`
`
`
`
`
`insulating film particularly when the stoichiometric ratio of
`
`
`
`
`
`
`
`
`the interface contacting at
`least
`the amorphous carbon
`
`
`
`
`
`
`
`
`fluoride of the silicon oxide film, silicon nitride film, or
`
`
`
`
`
`
`
`
`
`
`silicon oxi-nitride film is made silicon excess. In addition, it
`
`
`
`
`
`
`
`
`
`
`is shown that, if the silicon oxide film, silicon nitride film,
`
`
`
`
`
`
`
`
`
`
`
`or silicon oxi-nitride film is disposed on the sectional region
`
`
`
`
`
`
`
`
`
`
`of the amorphous carbon fluoride film exposed to the side
`
`
`
`
`
`
`
`
`
`
`
`
`
`10
`
`
`
`15
`
`
`
`20
`
`
`
`25
`
`
`30
`
`
`
`35
`
`
`
`40
`
`
`
`45
`
`
`50
`
`
`
`55
`
`
`
`60
`
`
`
`65
`
`
`Page 26 0f 34
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`4
`wall of a hole formed to pass through the insulating film
`
`
`
`
`
`
`
`
`
`
`
`containing the amorphous carbon fluoride film,
`then the
`
`
`
`
`
`
`
`
`degree of freedom can be significantly increased for the
`
`
`
`
`
`
`
`
`
`conditions in forming a conductive plug. The conductive
`
`
`
`
`
`
`
`
`plug is subsequently buried in the hole, whereby a semi-
`
`
`
`
`
`
`
`
`
`conductor device having a conductive plug with low specific
`
`
`
`
`
`
`
`
`resistance can be obtained. It is also shown that adhesion of
`
`
`
`
`
`
`
`
`
`
`
`the conductive plug is also improved if the silicon oxide
`
`
`
`
`
`
`
`
`
`
`film, silicon nitride film, or silicon oxi-nitride film is silicon
`
`
`
`
`
`
`
`
`
`
`
`excess in the composition of the film adjacent to the amor-
`
`
`
`
`
`
`
`
`
`
`phous carbon fluoride film.
`
`
`
`
`It is also described that, if an oxide film, nitride film, or
`
`
`
`
`
`
`
`
`
`
`
`
`oxi-nitride film providing improvement of adhesion to the
`
`
`
`
`
`
`
`
`top surface of the amorphous carbon fluoride film is dis-
`
`
`
`
`
`
`
`
`
`posed on an insulating layer containing the amorphous
`
`
`
`
`
`
`
`carbon fluoride film, the surface of amorphous carbon fluo-
`
`
`
`
`
`
`
`
`ride film which has been unevened due to burying of a
`
`
`
`
`
`
`
`
`
`
`wiring layer or the like can be flattened in good reproduc-
`
`
`
`
`
`
`
`
`
`
`ibility with chemical mechanical polishing by detecting the
`
`
`
`
`
`
`
`oxide film, nitride film or oxi-nitride film existing in the
`
`
`
`
`
`
`
`
`
`recessed portion for completion of polishing.
`
`
`
`
`
`
`As described above, Japanese Patent Application No.
`
`
`
`
`
`
`
`09-246242 shows that processing of the amorphous carbon
`
`
`
`
`
`
`
`
`fluoride film becomes possible by silicone resist. However,
`
`
`
`
`
`
`
`
`since the silicone resist is not common, and is negative
`
`
`
`
`
`
`
`
`
`
`resist, there is a problem that it is not a good compatible with
`
`
`
`
`
`
`
`
`
`
`
`the current LSI process technology mainly using positive
`
`
`
`
`
`
`
`
`resist. The reason why the positive resist is mainly used in
`
`
`
`
`
`
`
`
`
`
`
`the LSI process lies in that, as well known, it provides higher
`
`
`
`
`
`
`
`
`
`
`
`
`processing accuracy than the negative resist. Although suf-
`
`
`
`
`
`
`
`ficient processing accuracy has been obtained on the labo-
`
`
`
`
`
`
`
`
`ratory level even with the silicone type resist, to introduce
`
`
`
`
`
`
`
`
`
`the amorphous carbon fluoride film in an actual LSI manu-
`
`
`
`
`
`
`
`
`
`facturing line, it is necessary to build a process constituted
`
`
`
`
`
`
`
`
`
`by positive resist which is a mixture of phenol resin and
`
`
`
`
`
`
`
`
`
`
`photosensitive resin or a resin such as cyclized rubber and
`
`
`
`
`
`
`
`
`
`photosensitive resin.
`
`
`Furthermore,
`in the flattening process by the chemical
`
`
`
`
`
`
`
`
`mechanical polishing, although there is no problem in the
`
`
`
`
`
`
`
`
`
`it
`laboratory level,
`is found to be difficult
`to make the
`
`
`
`
`
`
`
`
`
`
`
`process as stable as in polishing a conventional film such as
`
`
`
`
`
`
`
`
`
`
`
`silicon oxide film.
`
`
`
`Here, the object of the present invention is to provide a
`
`
`
`
`
`
`
`
`
`
`
`technology for selectively forming a contact hole or via hole
`
`
`
`
`
`
`
`
`
`
`when an amorphous carbon fluoride film is applied on an
`
`
`
`
`
`
`
`
`
`
`inter-layer insulating film with low dielectric constant er.
`
`
`
`
`
`
`
`
`Such a technology is effective for solving the problems of
`
`
`
`
`
`
`
`
`
`
`interconnecting delay or crosstalk, burying wiring, and a
`
`
`
`
`
`
`
`
`practical LSI process using conventional positive resist
`
`
`
`
`
`
`
`similar to that described mainly on the technology for
`
`
`
`
`
`
`
`
`
`flattening the inter-layer insulating film in Japanese Patent
`
`
`
`
`
`
`
`
`Application Laid-Open No. 5-74962. However, the present
`
`
`
`
`
`
`
`invention also applies to not only an LSI chip having a
`
`
`
`
`
`
`
`
`
`
`
`multilayer wiring structure, but also a device in which a
`
`
`
`
`
`
`
`
`
`
`number of LSI chips are mounted on a substrate, such as a
`
`
`
`
`
`
`
`
`
`
`
`
`multi-chip module.
`
`
`The present invention improves adhesion with another
`
`
`
`
`
`
`
`material by making one principle plane an amorphous
`
`
`
`
`
`
`
`
`carbon fluoride film coated with a DLC (diamond like
`
`
`
`
`
`
`
`
`
`carbon) film containing hydrogen to prevent fluorine in the
`
`
`
`
`
`
`
`
`
`amorphous carbon fluoride film from being emitted outside,
`
`
`
`
`
`
`
`
`and by removing fluorine in a surface contacting another
`
`
`
`
`
`
`
`
`
`material. The addition of hydrogen provides the following
`
`
`
`
`
`
`
`
`effects:
`
`When the amorphous carbon fluoride film is applied to an
`
`
`
`
`
`
`
`
`
`
`LSI, it is effective to use a DLC film containing hydrogen in
`
`
`
`
`
`
`
`
`
`
`
`
`
`Page 26 of 34
`
`
`
`
`
`
`
`
`
`6,091,081
`
`
`
`
`5
`at least one of its primary planes, and an amorphous carbon
`
`
`
`
`
`
`
`
`
`
`
`fluoride film coated with at least one layer of film selected
`
`
`
`
`
`
`
`
`
`
`
`from a silicon excess silicon oxide film, silicon nitride film,
`
`
`
`
`
`
`
`
`
`
`or silicon oxi-nitride film. In this case, adhesion with another
`
`
`
`
`
`
`
`
`
`
`material is significantly improved by adjusting the supply of
`
`
`
`
`
`
`
`
`
`gas of the chemical vapor deposition (CVD) process to
`
`
`
`
`
`
`
`
`
`deposit a silicon excess silicon oxide film, silicon nitride
`
`
`
`
`
`
`
`
`
`film, or silicon oxi-nitride film, which is a mixed film of both
`
`
`
`
`
`
`
`
`
`
`
`
`(hereinafter comprehensively called “silicon excess film”).
`
`
`
`
`
`
`The CVD process for
`the silicon excess film uses an
`
`
`
`
`
`
`
`
`
`
`approach to mix gas containing silicon, such as silane
`
`
`
`
`
`
`
`
`
`(SiH4), and gas containing oxygen or nitrogen, such as 02,
`
`
`
`
`
`
`
`
`
`
`nitrogen monoxide (NO) or ammonia (NH3). In an adhesion
`
`
`
`
`
`
`
`
`
`layer consisting of the DLC film containing hydrogen and
`
`
`
`
`
`
`
`
`
`the silicon excess film, carbons, a DLC component element,
`
`
`
`
`
`
`
`
`
`are terminated by rich silicon and hydrogen in the silicon
`
`
`
`
`
`
`
`
`
`
`excess film, and are bound to provide enhancement of
`
`
`
`
`
`
`
`
`
`adhesion.
`
`In particular, adhesion with another material is signifi-
`
`
`
`
`
`
`
`cantly high for an amorphous carbon fluoride film which has
`
`
`
`
`
`
`
`
`
`
`an adhesion layer with a transition layer in which at least
`
`
`
`
`
`
`
`
`
`
`
`carbon and silicon mix in the interface between a DLC film
`
`
`
`
`
`
`
`
`
`
`
`containing hydrogen, and at least one layer of silicon excess
`
`
`
`
`
`
`
`
`
`
`film.
`
`to
`Formation of such adhesion layer first enables it
`
`
`
`
`
`
`
`
`
`implement, on a practical level, a semiconductor device in
`
`
`
`
`
`
`
`
`
`which at least part of insulating material is constituted by an
`
`
`
`
`
`
`
`
`
`
`
`amorphous carbon fluoride.
`
`
`
`In particular, if an amorphous carbon fluoride film with an
`
`
`
`
`
`
`
`
`
`adhesion layer as described above is applied to at least a part
`
`
`
`
`
`
`
`
`
`
`of the inter-layer insulating film in a multilayer wiring
`
`
`
`
`
`
`
`
`structure, it is possible to implement a semiconductor device
`
`
`
`
`
`
`
`with sufficiently high process reliability