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`571-272-7822
`Date Entered: August 29, 2016
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`
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`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________
`
`QUALCOMM INCORPORATED, GLOBALFOUNDRIES INC.,
`GLOBALFOUNDRIES U.S. INC., GLOBALFOUNDRIES DRESDEN
`MODULE ONE LLC & CO. KG, GLOBALFOUNDRIES DRESDEN
`MODULE TWO LLC & CO. KG,
`Petitioner,
`
`v.
`
`DSS TECHNOLOGY MANAGEMENT, INC.,
`Patent Owner.
`____________
`
`Case IPR2016-01313
`Patent 5,965,924
`____________
`
`
`
`Before BRYAN F. MOORE, BRIAN J. McNAMARA, and
`MINN CHUNG, Administrative Patent Judges.
`
`McNAMARA, Administrative Patent Judge.
`
`
`
`
`DECISION
`Institution of Inter Partes Review
`37 C.F.R. § 42.108
`
`
`
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`
`
`IPR2016-01313
`Patent 5,965,924
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`
`BACKGROUND
`
`Qualcomm Incorporated, Globalfoundries Inc., Globalfoundries U.S.
`Inc., Globalfoundries Dresden Module One LLC & Co. KG,
`Globalfoundries Dresden Module Two LLC & Co. KG (collectively,
`“Petitioner”) filed a petition, Paper 3 (“Pet.”), to institute an inter partes
`review of claims 1–6, 13, 14, and 16 (the “challenged claims”) of U.S.
`Patent No. 5,965,924 (“the ’924 Patent”). 35 U.S.C. § 311. Petitioner also
`timely filed a Motion for Joinder (Paper 4 (“Motion for Joinder”)) of this
`proceeding with Intel Corporation v. DSS Technology Management, Inc.,
`IPR2016-00289 (“Intel IPR2016-00289”), which is the subject of a Decision
`to Institute entered on June 8, 2016 . Petitioner represents that the instant
`Petition “is identical to the petition in Intel IPR2016-00289.”1 Mot. for
`Joinder 6. We have jurisdiction under 37 C.F.R. § 42.4(a) and 35 U.S.C.
`§ 314, which provides that an inter partes review may not be instituted
`unless the information presented in the Petition “shows that there is a
`reasonable likelihood that the petitioner would prevail with respect to at least
`1 of the claims challenged in the petition.” Having considered the
`arguments and the associated evidence presented in the Petition, for the
`reasons described below, we institute inter partes review of claims 1–6, 13,
`14, and 16.
`
`
`
`
`1 We understand Petitioner to mean identical in all substantive matters, as
`the identity of the parties is different. Petitioner also acknowledges that it
`relies on the testimony of a different expert than the expert witness in Intel
`IPR2016-00289, but states that the testimony is essentially the same. Mot.
`for Joinder 7.
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`2
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`IPR2016-01313
`Patent 5,965,924
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`REAL PARTIES IN INTEREST
`Petitioner Qualcomm Incorporated, Globalfoundries Inc.,
`Globalfoundries U.S. Inc., Globalfoundries Dresden Module One LLC &
`Co. KG, Globalfoundries Dresden Module Two LLC & Co. KG identifies
`itself as real parties-in-interest. Pet. 7.
`
`PENDING LITIGATION
`The parties state that Patent Owner has asserted ’924 Patent in the
`following litigation: (1) DSS Technology Management, Inc. v. Intel Corp.,
`No. 6:15-CV-130-RWS (E.D. Tex. 2015); and (2) DSS Technology
`Management, Inc. v. Qualcomm Inc., No. 6:15-CV-692-JRG (E.D. Tex.
`2015). Pet. 7;
`Petitioner notes that it has filed a separate petition for inter partes
`review of claims 7–12, 15, and 17 of the ’924 Patent. Pet. 8. That
`proceeding has been designated IPR2016-01312.
`
`THE ’924 PATENT (EXHIBIT 1001)
`The ’924 Patent relates to semiconductor fabrication in general, and in
`particular concerns a metal plug local interconnect that is formed in the same
`process of forming metal plugs that are already designed as sub-metal
`plugged contacts. Ex. 1001, col. 1, ll. 9–11. The ’924 Patent discloses that
`in semiconductor fabrication, it is often necessary to make a local
`interconnect between a gate polysilicon layer to N+ or P+ diffusion regions.
`Id. at col. 1, ll. 16–17. According to the ’924 Patent, conventionally such
`local interconnects were fabricated using buried contacts, as shown in
`Figures 1A and 1B of the ’924 Patent (id. at col. 1, l. 25–col. 2, l. 11) or with
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`a metallic local interconnect strap to shunt from a gate polysilicon to a
`diffusion region, as illustrated in Figures 2A and 2B of the ’924 Patent (id. at
`col. 2, l. 12–41).
`The ’924 Patent discloses a semiconductor structure in which a
`diffusion region is formed in a silicon substrate and a polysilicon gate is
`formed on the top surface of the silicon substrate adjacent to, but not
`contacting, the diffusion region. Ex. 1001, col. 3, ll. 1–6, 14–18. A layer of
`insulating material is then deposited on top of the polysilicon gate and the
`diffusion region. Id. at col. 3, ll. 6–7, 19–20. A via opening is formed in the
`insulating material to expose a portion of the polysilicon gate and a portion
`of the diffusion region. Id. at col. 3, ll. 7–8, 20–22. An electrically
`conducting material is deposited to at least partially fill via opening to
`provide an electrical connection between the polysilicon gate and the
`diffusion region. Id. at col. 3, ll. 8–11, 23–27.
`
`ILLUSTRATIVE CLAIM
`1. A semiconductor structure comprising:
`a silicon substrate having a top surface,
`a diffusion region formed in said substrate adjacent to said
`top surface,
`a gate formed on the top surface of said substrate
`juxtaposed to but not contacting said diffusion region,
`a sidewall spacer adjacent to said gate and disposed above
`said diffusion region,
`an insulator layer substantially covering said gate and said
`diffusion region, and
`a conducting plug at least partially filling a via in said
`insulation layer that exposes said sidewall spacer in the
`absence of said conducting plug, said conducting plug
`providing direct electrical communication between
`said gate and said diffusion region
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`Patent 5,965,924
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`ART CITED IN PETITIONER’S CHALLENGES
`
`Petitioner cites the following references in its challenges to
`patentability:
`
`Sakamoto, U.S. Patent No. 5,475,240 issued Dec. 12, 1995, Ex. 1003
`(“Sakamoto”); and
`
`Cederbaum et al., U.S. Patent No. 5,100,817 issued Mar. 31, 1992,
`Ex. 1004 (“Cederbaum”).
`
`CHALLENGES ASSERTED IN PETITION
`Claims
`Statutory Basis
`Challenge
`Anticipation by
`1–3, 14, and 16
`35 U.S.C. § 102(e)
`Sakamoto
`Obviousness over the
`combination of
`Sakamoto and
`Cederbaum
`
`4–6, and 13
`
`35 U.S.C. § 103
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`ANALYSIS OF PETITIONER’S PRIOR ART CHALLENGES
`
`Petitioner states that the instant Petition is substantially identical to the
`petition in Intel Corporation v. DSS Technology Management, Inc., which
`was filed December 8, 2015 and assigned Case No. IPR2016-00289 (Intel
`IPR2016-00289). Pet. 1. Petitioner also acknowledges that it relies on the
`testimony of a different expert than the expert witness in Intel IPR2016-
`00289, but states that the testimony is essentially the same. Id. at 7. Thus,
`we understand that Petitioner challenges the same claims of the ’924 Patent
`on the same grounds on which we instituted inter partes review in Intel
`IPR2016-00289.
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`We incorporate by reference our decision in Intel IPR2016-00289 and
`institute inter partes review in this proceeding on the same grounds, for the
`same reasons.
`
`
`SUMMARY
`For the reasons discussed above, on the current record we are
`persuaded that Petitioner has demonstrated a reasonable likelihood that it
`will succeed on the following challenges to patentability:
`Claims 1–3, 14, and 16 as anticipated under 35 U.S.C. § 102(e) by
`Sakamoto; and
`Claims 4–6, and 13 as obvious under 35 U.S.C. § 103(a) over the
`combination of Sakamoto and Cederbaum.
`
`ORDER
`In consideration of the foregoing, it is hereby:
`ORDERED that pursuant to 35 U.S.C. § 314(a) an inter partes review
`of the ’924 Patent is hereby instituted, commencing on the entry date of this
`Order, and pursuant to 35 U.S.C. § 314(c) and 37 C.F.R. § 42.4, notice is
`hereby given of the institution of a trial.
`FURTHER ORDERED that the trial is limited to the following
`grounds and no other grounds are authorized:
`Claims 1–3, 14, and 16 as anticipated under 35 U.S.C. § 102(e) by
`Sakamoto; and
`Claims 4–6, and 13 as obvious under 35 U.S.C. § 103(a) over the
`combination of Sakamoto and Cederbaum.
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`FURTHER ORDERED that the trial will be conducted in accordance
`with the Scheduling Order entered in Intel IPR2016-00289.
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`PETITIONER:
`
`David M. O’Dell
`David L. McCombs
`HAYNES AND BOONE, LLP
`david.odell.ipr@haynesboone.com
`david.mccombs.ipr@haynesboone.com
`
`
`PATENT OWNER
`
`Andriy Lytvyn
`Anton J. Hopen
`Nicholas Pfeifer
`Smith & Hopen, P.A.
`andriy.lytvyn@smithhopen.com
`anton.hopen@smithhopen.com
`nicholas.pfeifer@smithhopen.com
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