FEB.
`
`6. 2004 i1:44AM
`
`SONNENSCHEIN
`4-:
`a
`-
`r
`
`;._..
`
`‘MNO. 0832"‘P. 12/17"""_““
`
`I hereby certify that this correspondence is being sent via
`facsimile 703-308-7722 to Examiner Chris C. Chu at the
`Unllad slalas Patent a
`Trademark Office on
`
`_
`
`.
`
`r
`
`as
`Date of Facsimile
`Pa E
`au
`Name of Applicant. asslgnee or
`Re
`red
`raseniatlve
`
`7
`
`Signature
`
`I
`
`'
`
`Qy[ Elle-No. 09799940-0011 _
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`In re Appllction of:
`
`James E. Nulty, et al.
`
`Serial N°- 09/540-610
`
`Filing Date: March 31,2000
`
`For Method for Eliminating Lateral
`Spacer Erosion on Enclosed
`Contact Topographies During RF
`sputter Cleaning
`
`xgsasas./-—Isa»x~a\.asr\r
`
`Examiner Chris c. Chu
`
`Group An Unit No. 2315
`
`AMENDMENT AND REQUEST FOR RECONSIDERATION
`
`Mail Stop - AF
`Commissioner for Patents
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`Dear Sir:
`
`Responsive to the Offlcial Action of May 5, 2003 Applicants respectfully request
`
`reconsideration in light of the following amendments and remarks.
`
`INTEL 1022
`
`PAGE 12I17 * RCVD AT 2I6I2004 12:40:08 PM [Eastern Standard Time}* SVRIUSPTO-EFXRF-211 * DN|S:?463B65‘ CSIDI ’ DURATION (mm-ss):03-ii
`
`p
`
`
`
`6. 2004 i1:44AM
`
`SONNENSCHEIN
`4-:
`a
`-
`r
`
`;._..
`
`‘MNO. 0832"‘P. 12/17"""_““
`
`I hereby certify that this correspondence is being sent via
`facsimile 703-308-7722 to Examiner Chris C. Chu at the
`Unllad slalas Patent a
`Trademark Office on
`
`_
`
`.
`
`r
`
`as
`Date of Facsimile
`Pa E
`au
`Name of Applicant. asslgnee or
`Re
`red
`raseniatlve
`
`7
`
`Signature
`
`I
`
`'
`
`Qy[ Elle-No. 09799940-0011 _
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`In re Appllction of:
`
`James E. Nulty, et al.
`
`Serial N°- 09/540-610
`
`Filing Date: March 31,2000
`
`For Method for Eliminating Lateral
`Spacer Erosion on Enclosed
`Contact Topographies During RF
`sputter Cleaning
`
`xgsasas./-—Isa»x~a\.asr\r
`
`Examiner Chris c. Chu
`
`Group An Unit No. 2315
`
`AMENDMENT AND REQUEST FOR RECONSIDERATION
`
`Mail Stop - AF
`Commissioner for Patents
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`Dear Sir:
`
`Responsive to the Offlcial Action of May 5, 2003 Applicants respectfully request
`
`reconsideration in light of the following amendments and remarks.
`
`INTEL 1022
`
`PAGE 12I17 * RCVD AT 2I6I2004 12:40:08 PM [Eastern Standard Time}* SVRIUSPTO-EFXRF-211 * DN|S:?463B65‘ CSIDI ’ DURATION (mm-ss):03-ii
`
`p
`
`
`
`FEB.
`
`6. 2004 lI:44AM
`
`S0ilNEiiSCHEiN
`——
`l
`
` | is ...
`
`5:
`
`N0. 0332’_P.
`
`l3/l7:"‘'_‘
`
`IN THE CLAIMS
`
`25.
`
`(Previously presented) The semiconductor apparatus of claim 27 wherein
`
`said etch stop material comprises silicon nitride.
`
`26.
`
`(Previously presented) The semiconductor apparatus of claim 27 wherein
`
`said etch stop material comprises silicon dioxide.
`
`27.
`
`(Currently Amended) A structure. comprising:
`
`(a) a conductive layer disposed over a substrate;
`
`(in) a first insulating layer on the conductive layer;
`
`(c) a contact region in said flrst insuiatin layer.
`
`(d) at least one insulating spacer in the contact region adjacent to the first
`insulating layer. and
`A
`
`(e) an etch stop material over said tirst insulating layer and adjacent to the
`
`insulating spacer. the etch stop material being a different material from the insulating
`spacer,
`
` .
`
`‘
`
`_ _
`
`g V,
`
`97;’. L: w- fins ~,,
`_
`i _‘_.r’ 6% ‘_?,,-[4 ;.¢.(...¢..,~£
`4
`vfa 1%.: <i«i,rt~L...t.
`4-..< tr
`(Previously presented) The structure of Claim 27, wherein the Insulating Cf mm. 171...
`29.
`spacer has a surface portion in the contact region without overlying etch stop material.
`'19’5’ 0
`
`-
`
`.-{Lt
`,_
`
`‘rm;-...[’~'l'"
`..
`
`_
`
`30.
`
`(Previously presented) The structure of Claim 29. wherein the insulating
`
`spacer surface portion without overlying etch stop material comprises an insulating
`
`spacer surface portion most distant from said substrate.
`
`31.
`
`(Cancelled) .
`
`32.
`
`(Previously presented) The structure of Claim 27. further comprising a
`
`second insulating layer on the etch stop layer and over the conductive layer.
`
`PAGE i3i1i' acvn AT 2i6i2D0i 12:40:08 PM [Eastem Sla1idaidTlm0]* SVR:USPT0-EFXRF-2ii * DiiiS:7i51iii55'CSD: * DURATION iiiimvss):i3-iii
`
`2
`
`
`
`res. 5.2004 il:44AM
`
`S0llNENSCliElN
`i
`
`‘
`
`“
`_.
`.}
`
`‘N0 0831""? WWT":
`
`33.
`
`(Previously presented) The structure of Claim 32, further comprising a
`
`second conductive material in the contact region.
`
`34.
`
`(currently amended) A structure, comprising:
`
`,
`
`(a) a first electrically conductive material formed in and/or on a surface of
`
`a substrate:
`
`(b) a contact opening in a region adjacent to a second electrically
`
`conductive material formed on the substrate;
`
`(c) an electrically lnsulative spacer in the contact opening adjacent to the
`
`second electrically conductive material;
`
`‘
`
`(d) an etch stop material over the electrically insulative spacer and the first
`
`and second electrically conductive materials. the etch stop material being a different
`materil from the lnsulative spacer;
`
`(e) a blanket layer over the etch stop material; and
`
`(f) an opening through a first part of the etch stop material to the first
`
`electrically conductive material,
`
`who ‘nth
`
`ctri
`
`ll
`
`n
`
`'ves acerh
`
`asub
`
`ll
`
`ctan uar
`
`' nal
`
`ina
`
`ethatls su
`
`ntlal
`
`en ‘cu rto the substrat
`
`'
`
`cro s-s
`sums.
`
`35.
`
`(Cancelled).
`
`36.
`
`(Currently amended) The structure of Claim 34, wherein the electrically
`
`insulatingyg spacer has a surface portion without overlying etch stop material.
`
`(Currently amended) The structure of Claim 36. wherein the electrically
`37.
`insulatingye spacer surface portion without overlying etch stop material comprises a
`
`surface portion most distant fromthe substrate.
`
`38.
`
`(Previously presented) The structure of Claim 34, further comprising a
`
`second insulating layer on the etch stop layer and over the conductive layer.
`
`(Previously presented) The structure of Claim 38. further comprising a
`39.
`second conductive material in the contact region.
`
`3
`PAGE 14F17‘ RCVD AT 2i5l2il04 l2:40'.0il PM [EasternSlilllllaldT'Ille]’ SVR:USPTO£FXRF-Ill‘Dil|S:7463ll65' CSIDI' DURATION (mm-ss):03~36
`
`
`
`rre. 5.2004 ll:45AM
`
`"s0NNENScHEiN‘“
`
`“'N0-0832""? 15/l7‘””“
`
`REMARKS
`
`Claims 27 and 34 have been amended by incorporating the claims 28 and 35,
`
`respectively. Claims 36 and 37 have been amended to correct a typoraphical error.
`No new matter has been added.
`
`Applicants respectfully requests entry of this amendment, since no new
`
`limitations have been presented.
`
`The present invention relates to a semiconductor device with well defined contact
`
`In the past, the practice with respect to forming contact openings during the
`openings.
`fabrication of semiconductor devices, particularly self-aligned contact openings. was to
`
`use etchants with high selectivity to protect underlying regions. However, the properties
`
`of a highly selective etch of the overlying etch layer can transform a substantially
`
`rectangular spacer adjacent to the contact region into a sloped spacer. Beforethe .
`
`conductor materials are added to the contact openln. the opening was cleaned with a
`A
`sputter etchant which can erode a portion of the sloped Insulating spacer. Thus in
`conventional self-aligned contact structures. the diagonal thickness of the spacer, rather
`than the vertical thickness of the Insulating layer. determined the minimum insulating
`layer thickness for the gate. sloping spacers limit the number of structures that can be
`included on a device.
`
`The present invention avoids this problem by retaining the substantially
`
`rectangular profile of the insulating spacers. As illustrated in Figure 4K of the present
`
`specification, the spacer retains a substantially rectangular or "boxy" profile, l.e. the
`
`sides of the spacer are not sloping.
`
`PAGE fill? ‘ RCVD AT 7.llil2ll04 11:40:08 PM [Eastern standard l'ime]* SVRZUSFTO-EFXRF-ill ‘ 0NlS'.?463865’ CSlD'. * DURATION (mm-sslzllii-iii
`
`4
`
`
`
`FEB. 6.2004 11:45AM
`
`——.
`SON’NENSCHElN
`
`N0. 0832‘"_P. 16/17‘_"' "‘
`
`
`
`Figure 4K
`
`The rejection of the claims under 35 U.S.C. § 103 over Dennlggn, et al., in view
`of Figura, at al., and optionally further in view of Gonzalez, ls respectfully traversed.
`Dennison et al. does not show a substantially rectangular Insulating spacer.
`
`
`
`Dennison et al. describes a method of forrnlng a bit line over a capacitor array of
`
`memory cells. Element 18 in Figure 2 shows a spacer. This portion of the figure ls
`
`reproduced below. As illustrated. the spacer has a sloping portion. and is not
`
`substantially rectangular.
`
`
`
`A portion of Figure 2 from Dennison, et al.
`
`5
`
`PAGE 16l17 ‘ RCVD AT 21612004 12:40:08 PM [Easlem Standard Tlme]* SVR:USPTO-EFXRF-2l1 ‘ DNlS:7463865 * CSID: ‘ DURATION (mm-ss):ll3-36
`
`
`
`res. 5.2004 ii:45AM
`_
`
`sol_r_iElscHEIN“‘_“’—'
`as...
`
`.Z_
`
`“N0~033?""'P- 17/l7*‘“““
`
`
`
`Figura et g], has been cited for an etch stop material being different from the
`
`insulating spacer. Qgnzalez has only been cited for a description of silicon dioxide
`
`spacers. Neither reference describes a substantially rectangular insulating spacer.
`
`The presentinvention. as claimed, includes a substantially rectangular insulating
`
`spacer. As used in the present specification, this means that the spacer does not have
`
`sloping sides, and retains a “boxy” profile; thlsls illustrated in Figure 4K. shown above.
`
`In contrast. the spacers of Dgggjsgn. et al. has sloping sides. and Is therefore not
`
`substantially rectangular, as shown In Figure 2 of this reference. also shown above.
`
`Figgra et al. and Gonzalez also fail to show or suggest a substantially rectangular
`
`insulating spacer. Applicants respectfully submit that the claimed invention is not
`
`obvious over the applied" references. Withdrawal of this ground of rejectionis
`4
`respectfully requested.
`Applicants respectfully request that the Examiner contact the undersigned upon
`the indication of any allowable subject matter. Applicants submit the application is now
`in condition for allowance. Early notice of such action is earnestly solicited.
`
`ll
`
`submitted. Paul E. Rauch, Ph.D.
`
`Registration No. 38.591
`Attorney for Applicants
`SONNENSCHEIN NATH 8. ROSENTHAL
`P. O. BOX 061080
`WACKER DRIVE STATION, SEARS TOWER
`CHICAGO. IL 60606
`(312) 876-8000
`
`PAGE1iiil*RCVDAT2l6i200l12:40:08 PM [EaslemStandarll Time]'SVR:USPTO-EFXRF-til*DNlS:?l53865‘CSiD:*DURATION (mm-ss):08-36
`
`
`6.
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