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`1) J. D.MacBrayer, R. M. Swanson and T.W. Sigmon, J.
`Electrochem. Soc., 123, (1986) p.1242
`2) C. K. Hu et al. iEEE VMIC(1986) p.181
`3) H-K. Kans et al., IEEE VMIC(1993) p.223
`4 ) R.de Reus, R.J.I.M.Koper, H.Zeijlemaker, and F.W.
`Saris, Mater. Lett. vol.9(1990) p.500
`5) # xffi, 6*#t7,'r,(^Eefsf/xhlffid#€ 2, E*€+r*iER
`e, +ft9S, p.16e
`6 ) J.S.Reid et al. Thin Solid Films, 236, (1993) p.236
`7) J.G. Fleming, et al., Advanced Metallization for ULSI
`Applications, (1996) p.245
`8) D.S. Yoon et al, Advanced Metallization for ULSI Applica'
`tions(1997) to be published
`9 ) H.Miyazaki et al., J. Electrochem. Soc. 139, f1, (1992) p.3246
`10) N. Awaya et al., IEEE Trans. Electron Devices., 43, 8, 0996) p. u06
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`Efll Semiconduclor World 1998.2
`
`Page 6 of 6
`
`

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